JP2002197965A5 - - Google Patents

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Publication number
JP2002197965A5
JP2002197965A5 JP2000373425A JP2000373425A JP2002197965A5 JP 2002197965 A5 JP2002197965 A5 JP 2002197965A5 JP 2000373425 A JP2000373425 A JP 2000373425A JP 2000373425 A JP2000373425 A JP 2000373425A JP 2002197965 A5 JP2002197965 A5 JP 2002197965A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000373425A
Other languages
Japanese (ja)
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JP2002197965A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2000373425A priority Critical patent/JP2002197965A/en
Priority claimed from JP2000373425A external-priority patent/JP2002197965A/en
Publication of JP2002197965A publication Critical patent/JP2002197965A/en
Publication of JP2002197965A5 publication Critical patent/JP2002197965A5/ja
Pending legal-status Critical Current

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JP2000373425A 1999-12-21 2000-12-07 Electron emitting device, cold cathode field electron emitting element and its manufacturing method, and cold cathode field electron emission display device and its manufacturing method Pending JP2002197965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000373425A JP2002197965A (en) 1999-12-21 2000-12-07 Electron emitting device, cold cathode field electron emitting element and its manufacturing method, and cold cathode field electron emission display device and its manufacturing method

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP36313599 1999-12-21
JP11-363135 2000-10-16
JP2000315452 2000-10-16
JP2000-315452 2000-10-16
JP2000373425A JP2002197965A (en) 1999-12-21 2000-12-07 Electron emitting device, cold cathode field electron emitting element and its manufacturing method, and cold cathode field electron emission display device and its manufacturing method

Publications (2)

Publication Number Publication Date
JP2002197965A JP2002197965A (en) 2002-07-12
JP2002197965A5 true JP2002197965A5 (en) 2007-03-29

Family

ID=27341675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000373425A Pending JP2002197965A (en) 1999-12-21 2000-12-07 Electron emitting device, cold cathode field electron emitting element and its manufacturing method, and cold cathode field electron emission display device and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2002197965A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480773B1 (en) * 2000-01-07 2005-04-06 삼성에스디아이 주식회사 Method for fabricating triode-structure carbon nanotube field emitter array
JP4622145B2 (en) * 2001-04-25 2011-02-02 ソニー株式会社 Method for manufacturing electron emission device, method for manufacturing cold cathode field emission device, and method for manufacturing cold cathode field emission display
JP3625467B2 (en) 2002-09-26 2005-03-02 キヤノン株式会社 Electron emitting device using carbon fiber, electron source, and method of manufacturing image forming apparatus
US7202596B2 (en) * 2003-06-06 2007-04-10 Electrovac Ag Electron emitter and process of fabrication
US7157848B2 (en) * 2003-06-06 2007-01-02 Electrovac Fabrikation Elektrotechnischer Spezialartikel Gmbh Field emission backlight for liquid crystal television
JP2007504086A (en) * 2003-09-03 2007-03-01 本田技研工業株式会社 Method for producing one-dimensional carbon nanostructure
KR100593907B1 (en) 2004-05-21 2006-06-30 삼성전기주식회사 Fabrication method of field emitter electrode and field emission device produced by using the same
JP5075007B2 (en) * 2008-05-12 2012-11-14 日本放送協会 Cold cathode device, method of manufacturing the same, cold cathode display including the same, lighting device, and backlight for liquid crystal display device

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