JP2002189054A - Reliability test device of semiconductor device - Google Patents

Reliability test device of semiconductor device

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Publication number
JP2002189054A
JP2002189054A JP2000386890A JP2000386890A JP2002189054A JP 2002189054 A JP2002189054 A JP 2002189054A JP 2000386890 A JP2000386890 A JP 2000386890A JP 2000386890 A JP2000386890 A JP 2000386890A JP 2002189054 A JP2002189054 A JP 2002189054A
Authority
JP
Japan
Prior art keywords
value
resistor
resistance
test
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000386890A
Other languages
Japanese (ja)
Inventor
Rikitaro Mita
力太朗 三田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000386890A priority Critical patent/JP2002189054A/en
Publication of JP2002189054A publication Critical patent/JP2002189054A/en
Withdrawn legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a reliability test device, capable of efficiently and safely specifying a failure device, even when certain constant current or more is made to flow for failure, such as voltage resistant deterioration of a device to be tested. SOLUTION: The reliability test device for performing the life time test for the semiconductor device is provided with LED emission resistance (first resistance) 6 connected to a power source line supplying test voltage to each test device 4 to be tested, current limiting resistance (second resistance) 7 inserted and connected between the resistance 6 and the power source input terminal of the device 4 to be tested, and LED 8 connected in parallel with the resistance 6. When a current value, flowing in the resistance 6 at the value of the resistance 6, exceeds a set value, it is set at a value in which LED 8 emits by the voltage drop of both the ends of the resistance 6, and even if the device 4 to be tested is short-circuited at the value of the resistance 7, it is set at a value which does not exceed a prescribed current value.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子の信頼
性試験装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device reliability test apparatus.

【0002】[0002]

【従来の技術】一般に半導体素子の信頼性試験において
は、高温や高湿雰囲気中で逆バイアスの電圧を所定時間
(数100〜数1000時間)印加する寿命試験が行わ
れる。
2. Description of the Related Art Generally, in a reliability test of a semiconductor device, a life test in which a reverse bias voltage is applied for a predetermined time (several hundred to several thousand hours) in a high-temperature or high-humidity atmosphere is performed.

【0003】この種の試験においては、被試験デバイス
は1枚の試験基板に複数個搭載され、試験槽(恒温槽や
恒温恒湿槽)に挿入される。各々の試験基板にはカード
エッジコネクタを介して電源が供給され、試験基板上の
配線により各被試験デバイスに電源が供給される。
In this type of test, a plurality of devices under test are mounted on a single test board and inserted into a test chamber (a constant temperature chamber or a constant temperature / humidity chamber). Power is supplied to each test board via a card edge connector, and power is supplied to each device under test by wiring on the test board.

【0004】ところで、図3に示すように、試験槽1に
は保護抵抗回路基板5’が備えられ、被試験デバイス4
用の電源は外部電源から保護抵抗回路を介してカードエ
ッジコネクタ3に供給される。
As shown in FIG. 3, a test tank 1 is provided with a protective resistor circuit board 5 ′ and a device under test 4.
Power is supplied from an external power supply to the card edge connector 3 via a protection resistor circuit.

【0005】実際の寿命試験では、ショートモードの故
障等が発生した場合に被試験デバイス4に過電流が流れ
るのを防止するために、数10kΩ〜数100kΩの保
護抵抗7”を電源と被試験デバイス4の間に接続するの
が一般的である。ここで、保護抵抗7”の値としては、
過電流の値を極力小さく抑えるためには大きい方が望ま
しいが、抵抗値が大きい程、リーク電流等による電圧降
下が増大して被試験デバイス4の印加電圧が低下するた
め、10kΩ〜100kΩ程度の値に選ばれることが多
い。
In an actual life test, in order to prevent an overcurrent from flowing to the device under test 4 in the event of a short-mode failure or the like, a protective resistance 7 ″ of several tens kΩ to several hundreds kΩ is connected to a power supply and a test target. In general, it is connected between the devices 4. Here, the value of the protection resistor 7 ″ is
Although it is desirable that the overcurrent value be as small as possible, it is desirable that the overcurrent value be as small as possible. However, as the resistance value increases, the voltage drop due to leak current or the like increases and the applied voltage to the device under test 4 decreases. Often chosen as a value.

【0006】[0006]

【発明が解決しようとする課題】ところが、上述のよう
な試験装置によって寿命試験を行うと、被試験デバイス
4の耐圧劣化等の故障が発生した場合、最大で保護抵抗
7”で制限される電流が流れるが、前述したような理由
のために保護抵抗7”により過電流値を十分低い値に抑
えることができない場合には、流れる電流で保護抵抗
7”が赤熱状態となったり、又、複数個の被試験デバイ
ス4で故障が発生すると電流の電流リミットを超えたり
するという問題が発生する。そのため、被試験デバイス
4の故障は早期に発見して取り除く必要がある。
However, when a life test is performed by the test apparatus as described above, when a failure such as deterioration of the withstand voltage of the device under test 4 occurs, the current limited by the protection resistor 7 ″ at the maximum. However, if the overcurrent value cannot be suppressed to a sufficiently low value by the protection resistor 7 "for the above-described reason, the protection resistor 7" becomes red-hot due to the flowing current, or a plurality of If a failure occurs in the devices under test 4, there is a problem that the current exceeds the current limit, so it is necessary to detect and remove the failure of the device under test 4 at an early stage.

【0007】従来の装置では、1点の電圧を随時監視す
れば良いが、電圧計とプローブを用いて被測定デバイス
の個数分のマニュアル測定をしなければならために効率
が悪く、又、高耐圧デバイス等では印加電圧が数100
〜数100Vなるために測定には注意が必要となり、そ
のための十分な対策が必要になるという問題があった。
In the conventional apparatus, it is only necessary to monitor the voltage at one point at any time. However, it is inefficient because manual measurement of the number of devices to be measured is required using a voltmeter and a probe. For a withstand voltage device, etc., the applied voltage is several hundred.
Care must be taken in the measurement because the voltage is reduced to several hundreds of volts, and there is a problem that sufficient measures are required for that.

【0008】本発明は上記問題に鑑みてなされたもの
で、その目的とする処は、被試験デバイスの耐圧劣化等
の故障のために或る一定以上の電流が流れた場合であっ
ても、効率的、且つ、安全に故障デバイスを特定するこ
とができる半導体素子の信頼性試験装置を提供すること
にある。
The present invention has been made in view of the above-mentioned problem, and its object is to solve the problem even when a certain amount of current or more flows due to a failure such as deterioration of withstand voltage of a device under test. It is an object of the present invention to provide a semiconductor device reliability test apparatus capable of efficiently and safely specifying a failed device.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するた
め、請求項1記載の発明は、半導体素子の寿命試験を行
う信頼性試験装置において、各被試験デバイスに試験電
圧を供給する電源線に接続された第1の抵抗と、該第1
の抵抗と被試験デバイスの電源入力端子の間に挿入され
て接続された第2の抵抗と、前記第1の抵抗に並列に接
続されたLEDを設け、第1の抵抗の値を該第1の抵抗
を流れる電流値が設定値を超えると抵抗両端の電圧降下
により前記LEDが発光する値に設定し、第2の抵抗の
値を被試験デバイスがショート状態となっても所定の電
流値を超えない値に設定したことを特徴とする。
According to a first aspect of the present invention, there is provided a reliability test apparatus for performing a life test of a semiconductor device, wherein a power supply line for supplying a test voltage to each device under test is provided. A first resistor connected to the first resistor;
And a second resistor inserted and connected between the first resistor and a power input terminal of the device under test, and an LED connected in parallel to the first resistor. The value of the first resistor is set to the first resistor. When the value of the current flowing through the resistor exceeds the set value, the LED is set to a value at which the LED emits light due to the voltage drop across the resistor, and the value of the second resistor is set to the predetermined current value even when the device under test is short-circuited. The value is set so as not to exceed.

【0010】請求項2記載の発明は、請求項1記載の発
明において、前記第1及び第2の抵抗を可変抵抗器で構
成したことを特徴とする。
A second aspect of the present invention is characterized in that, in the first aspect of the present invention, the first and second resistors are constituted by variable resistors.

【0011】従って、請求項1記載の発明によれば、被
試験デバイスの劣化等のために電流が増加した場合、そ
の電流値が或る設定値を超えると第1の抵抗の両端の電
圧がLEDのON電圧を超えることによってLEDが発
光し、又、被試験デバイスのショートモード故障等のた
めに更に大きな電流が流れた場合には、電流がほぼ第2
の抵抗の値で決定される値に制限されるため、効率的、
且つ、安全に故障デバイスを特定することができる。
Therefore, according to the first aspect of the present invention, when the current increases due to deterioration of the device under test or the like, if the current value exceeds a certain set value, the voltage across the first resistor is increased. When the LED emits light by exceeding the ON voltage of the LED, and when a larger current flows due to a short mode failure of the device under test, the current becomes almost the second.
Is limited to the value determined by the resistance value of
In addition, a faulty device can be specified safely.

【0012】又、請求項2記載の発明によれば、第1の
抵抗及び第2の抵抗の値を任意変えることによって、L
EDが発光する電流値と被試験デバイスの制限電流値を
変えることができる。
According to the second aspect of the present invention, the value of the first resistor and the value of the second resistor can be changed arbitrarily to make L
The current value at which the ED emits light and the current limit value of the device under test can be changed.

【0013】[0013]

【発明の実施の形態】以下に本発明の実施の形態を添付
図面に基づいて説明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.

【0014】<実施の形態1>図1は本発明に係る半導
体素子の信頼性試験装置の構成図であり、同図におい
て、1は試験槽、2は試験基板、3は試験基板2と外部
からの電源線とを接続するカードエッジコネクタ部、4
は被試験デバイス、5は試験槽1の外部に備えられた保
護抵抗回路基板、6はLED発光用の抵抗、7は電流制
限用の抵抗、8はLED、Vsは電源端子、GNDは接
地端子である。
<Embodiment 1> FIG. 1 is a block diagram of a semiconductor device reliability test apparatus according to the present invention. In FIG. 1, 1 is a test tank, 2 is a test board, 3 is a test board 2 and an external Card edge connector for connecting the power line from
Is a device to be tested, 5 is a protection resistor circuit board provided outside the test tank 1, 6 is a resistor for emitting LED, 7 is a resistor for limiting current, 8 is an LED, Vs is a power supply terminal, and GND is a ground terminal. It is.

【0015】上記構成において、実際の数値例を用いて
信頼性試験装置の動作を説明する。
In the above configuration, the operation of the reliability test apparatus will be described using an actual numerical example.

【0016】被試験デバイス4に印加する試験電圧を1
000Vとすると、被試験デバイス(本実施の形態では
NPNトランジスタ)4には逆バイアスが印加されてお
り、そのリーク電流が抵抗6,7を流れることによる電
圧降下が無視できる値であれば、Vsには1000Vを
印加すれば良い。
The test voltage applied to the device under test 4 is 1
At 000 V, a reverse bias is applied to the device under test (the NPN transistor in the present embodiment) 4, and if the leakage current is such that the voltage drop caused by flowing through the resistors 6 and 7 is negligible, Vs , A voltage of 1000 V may be applied.

【0017】ここで、被試験デバイス4が劣化してリー
ク電流が増加した場合にその電流が例えば約1mA以上
になるとLED8を発光させて故障したデバイスを特定
するためには、LED4が発光する電圧を約2Vとすれ
ば、抵抗6の値を2(V)/1(mA)=2(kΩ)に
設定すれば良い。
Here, when the device under test 4 is deteriorated and the leak current increases, if the current becomes, for example, about 1 mA or more, the LED 8 emits light to identify the failed device. Is about 2 V, the value of the resistor 6 may be set to 2 (V) / 1 (mA) = 2 (kΩ).

【0018】次に、被試験デバイス4が故障したことに
よる過電流でLED8が破壊するのを防ぐためには、例
えばLED8の最大定格電流が20mAであれば、抵抗
7の値を約1000(V)/20(mA)=50(k
Ω)以上に設定すれば良い。
Next, in order to prevent the LED 8 from being destroyed by an overcurrent due to the failure of the device under test 4, for example, if the maximum rated current of the LED 8 is 20 mA, the value of the resistor 7 is set to about 1000 (V). / 20 (mA) = 50 (k
Ω) or more.

【0019】以上の抵抗値の設定による構成において、
信頼性試験中に被試験デバイス4の劣化のためにリーク
が増加した場合、電流が1mAを超えると抵抗6の電圧
降下が2Vを越えてLED8が発光する。又、被試験デ
バイス4が殆どショート状態で故障した最悪の場合に
は、電流の最大値はほぼ1000(V)/50(kΩ)
=20(mA)に制限される。
In the above configuration by setting the resistance value,
When the leakage increases due to the deterioration of the device under test 4 during the reliability test, when the current exceeds 1 mA, the voltage drop of the resistor 6 exceeds 2 V, and the LED 8 emits light. In the worst case where the device under test 4 has almost failed in a short-circuit state, the maximum value of the current is almost 1000 (V) / 50 (kΩ).
= 20 (mA).

【0020】以上のように本実施の形態においては、被
試験デバイス4が劣化によりリーク電流が約1mAを超
えるとLED8が発光するため、劣化したデバイスを容
易に特定することができ、又、ショート状態の故障とな
った場合でもLED8を流れる電流値はLED8の最大
定格を超えないためにLED8が破壊されることがな
い。
As described above, in this embodiment, the LED 8 emits light when the leak current exceeds about 1 mA due to the deterioration of the device under test 4, so that the deteriorated device can be easily specified, and Even in the case of a state failure, the current flowing through the LED 8 does not exceed the maximum rating of the LED 8, so that the LED 8 is not destroyed.

【0021】<実施の形態2>次に、本発明の実施の形
態2を図2に基づいて説明する。
<Embodiment 2> Next, Embodiment 2 of the present invention will be described with reference to FIG.

【0022】図2は本実施の形態に係る半導体素子の信
頼性試験装置の構成図であり、前記実施の形態1と異な
る点はLED発光用抵抗6’と電流制限用抵抗7’を可
変抵抗器で構成した点にある。
FIG. 2 is a block diagram of a semiconductor device reliability test apparatus according to this embodiment. The difference from the first embodiment is that the LED light emitting resistor 6 'and the current limiting resistor 7' are variable resistors. In that it is made up of containers.

【0023】本発明に係る信頼性試験においては、被試
験デバイスや試験温度、試験電圧などの条件が試験によ
り変わるので、LED8を発光させる電流値を変える必
要が生じる可能性がある。又、試験電圧が変わると電流
制限用抵抗値も変える必要が生じる。
In the reliability test according to the present invention, since conditions such as a device under test, a test temperature, and a test voltage change depending on the test, it may be necessary to change a current value for causing the LED 8 to emit light. Further, when the test voltage changes, it is necessary to change the current limiting resistance value.

【0024】而して、本実施の形態では、各抵抗6’,
7’を可変抵抗器で構成したため、これらの抵抗6’,
7’の抵抗値を必要に応じてその試験に適した値に変え
ることが容易に可能となる。
Thus, in the present embodiment, each resistor 6 ',
Since 7 'is composed of a variable resistor, these resistors 6',
It is easily possible to change the resistance value of 7 'to a value suitable for the test as required.

【0025】[0025]

【発明の効果】以上の説明で明らかなように、本発明に
よれば、半導体素子の寿命試験を行う信頼性試験装置に
おいて、各被試験デバイスに試験電圧を供給する電源線
に接続された第1の抵抗と、該第1の抵抗と被試験デバ
イスの電源入力端子の間に挿入されて接続された第2の
抵抗と、前記第1の抵抗に並列に接続されたLEDを設
け、第1の抵抗の値を該第1の抵抗を流れる電流値が設
定値を超えると抵抗両端の電圧降下により前記LEDが
発光する値に設定し、第2の抵抗の値を被試験デバイス
がショート状態となっても所定の電流値を超えない値に
設定したため、被試験デバイスの耐圧劣化等の故障のた
めに或る一定以上の電流が流れた場合であっても、効率
的、且つ、安全に故障デバイスを特定することができる
という効果が得られる。
As apparent from the above description, according to the present invention, in a reliability test apparatus for performing a life test of a semiconductor element, a reliability test apparatus connected to a power supply line for supplying a test voltage to each device under test is provided. A first resistor, a second resistor inserted and connected between the first resistor and a power supply input terminal of the device under test, and an LED connected in parallel to the first resistor. Is set to a value at which the LED emits light due to a voltage drop across the resistor when the value of the current flowing through the first resistor exceeds a set value, and the value of the second resistor is set to the value when the device under test is short-circuited. Since the current value is set to a value that does not exceed the predetermined current value even if a certain amount of current or more flows due to a failure such as deterioration of the withstand voltage of the device under test, failure occurs efficiently and safely. The effect is that the device can be identified. That.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態1に係る半導体素子の信頼
性試験装置の構成図である。
FIG. 1 is a configuration diagram of a semiconductor device reliability test apparatus according to a first embodiment of the present invention.

【図2】本発明の実施の形態2に係る半導体素子の信頼
性試験装置の構成図である。
FIG. 2 is a configuration diagram of a semiconductor device reliability test apparatus according to a second embodiment of the present invention.

【図3】従来の半導体素子の信頼性試験装置の構成図で
ある。
FIG. 3 is a configuration diagram of a conventional semiconductor device reliability test apparatus.

【符号の説明】[Explanation of symbols]

1 試験槽 2 試験基板 3 カードエッジコネクタ部 4 被試験デバイス 5 保護抵抗回路基板 6,6’ LED発光用抵抗(第1の抵抗) 7,7’ 電流制限用抵抗(第2の抵抗) 8 LED DESCRIPTION OF SYMBOLS 1 Test tank 2 Test board 3 Card edge connector part 4 Device under test 5 Protective resistor circuit board 6, 6 'LED light emitting resistor (first resistor) 7, 7' Current limiting resistor (second resistor) 8 LED

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子の寿命試験を行う信頼性試験
装置において、各被試験デバイスに試験電圧を供給する
電源線に接続された第1の抵抗と、該第1の抵抗と被試
験デバイスの電源入力端子の間に挿入されて接続された
第2の抵抗と、前記第1の抵抗に並列に接続されたLE
Dを設け、第1の抵抗の値を該第1の抵抗を流れる電流
値が設定値を超えると抵抗両端の電圧降下により前記L
EDが発光する値に設定し、第2の抵抗の値を被試験デ
バイスがショート状態となっても所定の電流値を超えな
い値に設定したことを特徴とする半導体素子の信頼性試
験装置。
In a reliability test apparatus for performing a life test of a semiconductor element, a first resistor connected to a power supply line for supplying a test voltage to each device under test; A second resistor inserted and connected between the power input terminals, and an LE connected in parallel with the first resistor;
D, and when the value of the current flowing through the first resistor exceeds a set value, a voltage drop across the resistor causes the L to decrease.
A reliability test apparatus for a semiconductor device, wherein the value of the second resistor is set to a value that does not exceed a predetermined current value even when the device under test is short-circuited.
【請求項2】 前記第1及び第2の抵抗を可変抵抗器で
構成したことを特徴とする請求項1記載の半導体素子の
信頼性試験装置。
2. The reliability test apparatus for a semiconductor device according to claim 1, wherein said first and second resistors are constituted by variable resistors.
JP2000386890A 2000-12-20 2000-12-20 Reliability test device of semiconductor device Withdrawn JP2002189054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000386890A JP2002189054A (en) 2000-12-20 2000-12-20 Reliability test device of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000386890A JP2002189054A (en) 2000-12-20 2000-12-20 Reliability test device of semiconductor device

Publications (1)

Publication Number Publication Date
JP2002189054A true JP2002189054A (en) 2002-07-05

Family

ID=18853919

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102520329A (en) * 2011-11-30 2012-06-27 江苏飞格光电有限公司 Reliability test method of semiconductor laser
CN103777134A (en) * 2014-02-18 2014-05-07 迈普通信技术股份有限公司 Chip reliability testing method and system for differential clock signal
PL424109A1 (en) * 2017-12-29 2019-07-01 Akademia Morska W Gdyni Method and the system for measuring thermal resistance and optical radiation intensity of the LED power diode
JP7461665B2 (en) 2022-03-18 2024-04-04 株式会社ケミトックス Reliability test equipment for semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102520329A (en) * 2011-11-30 2012-06-27 江苏飞格光电有限公司 Reliability test method of semiconductor laser
CN103777134A (en) * 2014-02-18 2014-05-07 迈普通信技术股份有限公司 Chip reliability testing method and system for differential clock signal
PL424109A1 (en) * 2017-12-29 2019-07-01 Akademia Morska W Gdyni Method and the system for measuring thermal resistance and optical radiation intensity of the LED power diode
JP7461665B2 (en) 2022-03-18 2024-04-04 株式会社ケミトックス Reliability test equipment for semiconductor devices

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