JP2002184664A - System and method for charged-particle-beam exposure, and stage device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize highly accurate drawing by suppressing degradation of writing accuracy due to adoption of fluid bearings, such as static-pressure air bearings. SOLUTION: This exposure system comprises a stage pedestal composed of a magnetic material, a stage 1002 on which a wafer is loaded and which moves on the stage pedestal in a vacuum environment, fluid bearings 1027 that float the stage 1002 from the stage pedestal by pressurized fluid, magnet units 1028 that apply attractive forces between the stage pedestal and the stage 1002, and an electromagnetic lens. The electromagnetic lens has an upper magnetic pole piece 1104, having a prescribed opening and a lower magnetic pole piece 1105, and converges the charged-particle beam on a wafer W that is loaded between the upper magnetic pole piece 1104 and the lower magnetic pole piece 1105. The lower magnetic pole piece 1105 is formed of a magnetic material of high permeability, and is located between magnetic force units 1028 and the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus and an ion beam exposure apparatus, and more particularly, to a reduction in exposure accuracy due to a change in the position of a charged particle beam accompanying movement of a stage. And a charged particle beam exposure apparatus improved to solve the above problem.

[0002]

2. Description of the Related Art A charged particle beam exposure apparatus is suitable for, for example, an exposure step in the manufacture of a semiconductor integrated circuit or the like, and is roughly divided into an apparatus for drawing a pattern while scanning a wafer with a point beam and a mask. There is a device for shaping a beam into a desired shape and transferring a mask pattern onto a wafer. In both cases, in order to draw a pattern on the entire surface of the wafer, a highly accurate stage is required to move the wafer with respect to the beam with high accuracy.

[0003]

In this type of conventional apparatus, a stage having a non-contact type static pressure air bearing has been proposed in order to obtain a desired positioning accuracy. By employing a non-contact type static pressure air bearing, it is possible to prevent the stage and the like from being deformed due to the movement of the stage and to move the stage with high accuracy.

However, in a charged particle beam exposure apparatus,
Since the stage is placed in a vacuum, a vacuum suction type pressurizing mechanism cannot be used as a pressurizing mechanism for applying pressure to the stage. Therefore, magnetic force means is used as another pressurizing mechanism. As a result, the position of the charged particle beam fluctuates with the movement of the stage, and there is a problem that a pattern cannot be drawn or transferred to a desired position on the wafer.

The present invention has been made in view of the above background, and has as its object to realize high-precision drawing while suppressing a decrease in drawing accuracy due to the use of a fluid bearing such as a hydrostatic air bearing. And

[0006]

SUMMARY OF THE INVENTION A first aspect of the present invention is as follows.
According to a charged particle beam exposure method, an electron optical column including an electron lens for converging a charged particle beam and a deflector for deflecting the charged particle beam, a surface plate, and a sample stage movable on the surface plate Using a charged particle beam exposure apparatus including magnetic force means for urging a preload to the sample stage, and a leakage magnetic field shield means for shielding a leakage magnetic field from the magnetic force means, on the sample stage; A pattern is drawn on the sample by the charged particle beam.

A second aspect of the present invention relates to a charged particle beam exposure apparatus for drawing a pattern on a substrate using a charged particle beam, and comprises a surface plate made of a magnetic material, and a surface plate on which the substrate is placed. A stage that moves in a vacuum along, and a fluid bearing that is provided at an opposing portion of the stage that faces the surface plate and floats the stage from the surface plate with a pressurized fluid,
A magnetic force means provided on the facing portion for applying an attractive force between the surface plate and the stage, an upper magnetic pole piece having a predetermined opening, and a lower magnetic pole piece; And a magnetic field lens for converging the charged particle beam on the substrate disposed between the lower magnetic pole piece and the lower magnetic pole piece, wherein the lower magnetic pole piece is formed of a magnetic material having high magnetic permeability, A magnetic lens provided with the lower pole piece between the substrate and a substrate.

Here, the lower pole piece is preferably formed of a non-conductive magnetic material (eg, ferrite), and is preferably plate-shaped.

Preferably, the stage is provided with a magnetic shield member between the magnetic force means and the lower magnetic pole piece so as to cover the magnetic force means. Preferably, the magnetic shield member is formed of permalloy.

Preferably, the size of the lower magnetic pole piece as viewed from the substrate side is larger than that of the magnetic force means, and is larger than that of the opening of the upper magnetic pole piece. .

A third aspect of the present invention relates to a charged particle beam exposure method using a charged particle beam exposure apparatus defined as the second aspect of the present invention, wherein a substrate is mounted on the stage of the charged particle beam exposure apparatus. And a pattern is drawn on the substrate.

A fourth aspect of the present invention relates to a stage device used in a charged particle beam exposure apparatus for drawing a pattern on a substrate using a charged particle beam, and a surface plate made of a magnetic material;
A stage on which the substrate is placed and moves along the surface plate, and a fluid bearing that supports the stage on the surface plate,
Magnetic force means for applying an attractive force between the surface plate and the stage, and a magnetic pole piece provided on the stage, forming a part of a magnetic field lens for converging the charged particle beam on the substrate. The magnetic pole piece is provided between the magnetic force means and the substrate.

Here, the pole piece is preferably formed of a non-conductive magnetic material, and is preferably formed of a magnetic material having a high magnetic permeability. More specifically, the pole piece is preferably formed of ferrite.

Preferably, the pole piece has a plate shape.

Preferably, the stage is provided with a magnetic shield member between the magnetic force means and the magnetic pole piece so as to cover the magnetic force means.

Preferably, the magnetic shield member is formed of permalloy.

Preferably, the size of the pole piece as viewed from the substrate side is larger than that of the magnetic force means.

A fifth aspect of the present invention relates to a method of manufacturing a device by using a charged particle beam exposure apparatus defined as the second aspect of the present invention as a part of a process, and applying a resist to a substrate. And a step of drawing a pattern on the substrate coated with the resist by the charged particle beam exposure apparatus, and a step of developing the substrate on which the pattern is drawn.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Here, an electron beam exposure apparatus will be described as an example of a charged particle beam exposure apparatus. The present invention can be applied not only to an exposure apparatus using an electron beam, but also to an exposure apparatus using an ion beam.

FIG. 1 shows an electron beam exposure apparatus according to a preferred embodiment of the present invention. 1100 is a vacuum chamber,
It is evacuated by a vacuum pump (not shown). In the vacuum chamber 1100, the electron optical system 10 is roughly divided.
01, wafer stage 1002, length measuring interferometer 1003
Is arranged.

The electron optical system 1 converges an electron beam emitted from an electron gun (not shown) on the wafer W and scans the wafer W. Each component of the electron optical system 1 is controlled by the electron optical system control unit 1004. Details of each component constituting the electron optical system 1001 will be described later.

Next, the wafer stage 1002 will be described. 1021 is a stage surface plate made of a magnetic material, 10
Reference numeral 22 denotes a Y stage movable on the surface plate 1021 in the Y direction, and 1023, an X stage movable on the surface plate 1021 in the X direction.
The stage is driven in the Y direction by a Y stage 1022. ΘZ stage 2 on X stage 1023
4 are mounted. On the θZ stage 1024, an electrostatic chuck 1025 for attracting and fixing the wafer W and mirrors MX and MY (not shown) for the length measurement interferometer 1003 are mounted. Reference numeral 1026 denotes a fixed guide made of a magnetic material in the horizontal direction (Y-axis direction) for guiding the Y stage 1022. Reference numerals 1027a (see AA 'sectional view shown in FIG. 2), 1027b, 1027c, and 1027d are static pressure air bearings. The static pressure air bearing includes a porous pad for supplying gas and a labyrinth partition for preventing gas from flowing out, in order to enable operation in the vacuum chamber 1100. The labyrinth partition is provided outside the porous pad, and sucks the gas ejected from the porous pad between the partitions so as to prevent the gas from leaking outside the bearing. 1027 of these hydrostatic bearings
a (see AA ′ cross-sectional view in FIG. 2) supports the X stage 1023 from the horizontal direction (Y axis direction) and
X stage 1023 along guide 022a of 022
1027b (see the cross-sectional view taken along the line AA ′ in FIG. 28) supports the X stage 22 from below and
1027c supports the Y stage 1022 from the horizontal direction, and the fixed guide 1027
Guide the Y stage 1022 along 26, 1027d
Supports the Y stage 1022 from below and guides the Y stage 1022 along the surface plate 1021.

FIG. 3 shows a Y stage 1022 and an X stage 1
FIG. 23 is a plan view of the H.023 viewed from below. In the figure, 10
28b, 1028c, and 1028d are magnet units, each having, for example, a permanent magnet and yokes arranged on both sides thereof. These magnet units serve as a pressurizing mechanism, and include a moving body (X stage 1023, Y stage 1022) and a guide unit (surface plate 1021, fixed guide 102).
6) A magnetic attraction force is applied during. With the pressurizing mechanism, when the moving body is levitated by supplying the pressurized fluid to the static pressure bearing, the moving body is prevented from tilting due to variations in the characteristics of the bearing, and a constant posture is always maintained. . In a wafer stage used in the atmosphere, as a pressurizing mechanism, there is a method in which air between a moving body and a guide portion is suctioned to make the pressure negative, but as in the present embodiment, the wafer stage is vacuumed. When used in a device, the only method that utilizes magnetic force is the method. Also, X stage 1023
Except for the horizontal guide plate 1022a, the Y stage 1
022, the surface of the X stage 1023 is covered with a magnetic shield material (for example, permalloy) to reduce the influence of the magnetic field from the pressurizing magnet unit on the electron beam.

FIG. 4 shows a Y stage 1022 and an X stage 1
FIG. 2 is a plan view of the H.023 viewed from above. In the figure, an X stage 1023 is driven by an arm XA that expands and contracts in the X direction. Returning to FIG. 1, the tip of the arm XA is the X stage 1
With the Y guide rail YG fixed at 023 sandwiched,
It is connected to the X stage 1023 to prevent the movement of the X stage 1023 in the Y direction. And arm X
A is driven by an X actuator 1029 fixed to the vacuum chamber 1100 to expand and contract in the X direction. Similarly, the Y stage 1022 is connected to an arm YA that expands and contracts in the Y direction by a Y actuator (not shown), and is driven by the arm YA. X actuator 1
The 029 and Y actuators are controlled by the wafer stage control unit 1006.

Therefore, the Y stage 1022 floats from the surface plate 1021 by supplying air to the static pressure air bearings 1027c and 1027d, and is moved in the Y direction along the fixed guide 1026 provided on one side by the Y actuator. . The X stage 1022 is a static pressure air bearing 1
027a and 1027b are supplied to the surface of the platen 21 in the same manner as the Y stage 22 to supply air to the Y stage 1022.
Is moved in the X direction by the X actuator 1028 with the guide plate 1022a of the X direction being the horizontal guide. At this time, the X stage 1023 and the Y stage 1022 are adjusted by a plurality of magnet units so as to always have a constant posture.

The length measuring interferometer 1003 divides a laser beam emitted from a laser light source provided therein into a length measuring beam and a reference beam. Then, the measuring beam is advanced toward the mirror M on the wafer stage 1002,
The reflected beam is reflected by the mirror M and returned to the inside again, while the reference beam is reflected by the internal reference mirror and the intensity signal of the interference light of both returned beams is detected. Since the frequency of the length measuring beam and the frequency of the reference beam are different from each other by a small amount Δf in the emission stage, the frequency becomes Δ according to the moving speed of the mirror MX in the X direction.
A signal changing from f is output. The intensity signal is processed by the stage position detection unit 6, so that the amount of change in the optical path length of the measurement beam with reference to the optical path length of the reference beam,
In other words, the mirror MX fixed on the wafer stage
Are measured with high resolution and high accuracy based on the reference mirror. Similarly, although not shown, the length measurement interferometer for detecting the position of the wafer stage in the Y direction allows the Y direction of the mirror MY fixed to the wafer stage 4 to be measured.
The coordinates of the direction are measured with high resolution and high accuracy based on the reference mirror.

Next, the electron optical system 1001 will be described with reference to FIG.

The electron optical system 1001 includes a first magnetic lens M
L1 and a second magnetic field lens ML2. The first magnetic lens ML1 includes an upper pole piece 1101 and a lower pole piece 110.
2 and each pole piece has a circular opening for passing an electron beam EB emitted from the electron gun ES. Then, the excitation coil 1103 operates the first magnetic field lens ML1.

The second magnetic lens ML2 has an upper perforated magnetic pole piece 1104 and a lower plate-shaped non-perforated magnetic pole piece 1105,
The position where the electron beam EB converges, that is, the position of the wafer W is such that the upper perforated magnetic pole piece 1104 and the lower non-perforated magnetic pole piece 110
5 is an immersion lens.
Location 1107 in the magnetic circuit of the second magnetic lens ML2
Have alternating magnetic and non-magnetic portions so that the lines of magnetic force in the upper perforated pole piece 104 are not short-circuited.
Further, the portion 1108 of the magnetic circuit of the second magnetic field lens ML2 has such a shape that the magnetic flux passes through the non-perforated magnetic pole piece 1105 with minimum reluctance and diffraction.

Further, the electron optical system 1001 includes deflectors 1109 and 1110 for deflecting the electron beam EB with a magnetic field, and a magnetic field compensation yoke 1111 for providing a magnetic field proportional to the first derivative of the axial magnetic field generated by the second magnetic lens ML2. Have.

In the electron optical system 1001, with the above configuration, the electron beam EB emitted from the electron gun ES is converted into a substantially parallel electron beam by the first magnetic lens ML1, and the electron beam is deflected by the deflectors 1109 and 1110. As a result, the light is displaced from the geometrical electron optical axis AX and is perpendicularly incident on the second magnetic lens ML2. Then, the electron optical axis of the second magnetic lens ML2 is displaced by the magnetic field compensation yoke 1011 in accordance with the displacement of the electron beam EB from the geometric electron optical axis AX. As a result, the electron beam EB converges on the wafer W with the off-axis aberration removed. That is, the electron optical system 1001 is a so-called V
It constitutes AIL (Variable Axis Immersion Lens).

As shown in FIG. 5, the wafer stage 1002 of this embodiment has a static pressure air bearing. Since the wafer stage 1002 is used in a vacuum, the X stage 10 of the wafer stage 1002 is used as described above.
23 is a magnet unit 1028b for obtaining a certain posture.
Are provided immediately below the wafer W. Therefore, the movement of the wafer stage 1002, in other words, the magnet unit 1
With the movement of 028b, the magnetic field near the electron beam EB converging on the wafer W fluctuates due to the magnetic field from the magnet unit 1028b, and the position of the electron beam EB may fluctuate. However, the electron optical system 100 of the present embodiment
In FIG. 1, an immersion lens (second magnetic field lens ML2) is formed, a non-porous magnetic pole piece 1105 of the immersion lens is formed of a magnetic material having high magnetic permeability,
The magnetic field from the magnet unit 1028b is provided between the non-perforated magnetic pole piece 1
The magnetic field near the electron beam EB converging on the wafer W is shielded by 105 so as not to affect the magnetic field.

Further, by forming the non-porous magnetic pole piece 1105 from a non-conductive magnetic material (eg, ferrite), eddy current due to a magnetic field change in the non-porous magnetic pole piece 1105 due to the movement of the wafer stage is reduced. . As a result, the influence of the magnetic field generated by the eddy current on the magnetic field near the electron beam EB converging on the wafer W can be reduced. Instead, stop after moving the wafer stage,
After the eddy current stops flowing, the wafer W may be irradiated with the electron beam EB.

In order to better shield the magnetic field from the magnet unit 1028b, the magnet unit 1028b
Any shape can be used as long as it is a non-porous magnetic pole piece 1105 that covers the surface of the ferrite. However, ferrite is not practical because of poor workability.
Therefore, in this embodiment, as shown in FIG. 5, a magnetic shield member MS (for example, permalloy) having good workability is provided between the magnet unit 1028b and the non-perforated magnetic pole piece 1105.
The X stage 102 covers the magnet unit 1028b.
3. This form is a magnet unit 1028b
In addition to better shielding the magnetic field from the lens, the non-porous pole piece 1105 does not leak the lens magnetic field of the immersion lens to the magnetic shield member MS side, so that the magnetic shield member MS affects the magnetic circuit of the immersion lens. There is no change in the characteristics of the immersion lens due to the movement of the magnetic shield member MS (in other words, the movement of the stage 2).

In order to better shield the magnetic field from the magnet unit 1028b, the wafer W
It is preferable that the size as viewed from the side is larger than that of the magnet unit 1028b. Furthermore, a non-porous pole piece 1
It is preferable that the size of the lens 105 viewed from the wafer W side is sufficiently larger than that of the lens opening (point 1108) of the immersion lens. By doing so, the lower non-porous magnetic piece 1105 is located near the lens opening (location 1108) regardless of the exposure position of the wafer.

An example of a device manufacturing method using a charged particle beam exposure apparatus represented by the electron beam exposure apparatus described in the above embodiment will be described.

FIG. 6 shows a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin film magnetic heads, micro machines, etc.). Step 1
In (circuit design), a circuit of a semiconductor device is designed.
In step 2 (exposure control data creation), exposure control data to be provided to the charged particle beam exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon.
Step 4 (wafer process) is referred to as a preprocess, and an actual circuit is formed on the wafer by lithography using a charged particle beam exposure apparatus to which exposure control data has been input. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer prepared in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 7 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the charged particle beam exposure apparatus to draw a circuit pattern on the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been conventionally difficult to manufacture, at low cost.

[0040]

According to the present invention, it is possible to realize high-precision drawing, for example, by suppressing a decrease in drawing accuracy due to the use of a fluid bearing.

[Brief description of the drawings]

FIG. 1 is a view showing an electron beam exposure apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a sectional view of a part of the electron beam exposure apparatus shown in FIG.

FIG. 3 is a plan view of a Y stage 22 and an X stage 23 shown in FIGS. 1 and 2 as viewed from below.

FIG. 4 is a plan view of the Y stage 22 and the X stage 23 shown in FIGS. 1 and 2 as viewed from above.

FIG. 5 is a view showing details of an electron optical system and a stage shown in FIG. 1;

FIG. 6 is a diagram illustrating a manufacturing flow of a micro device.

FIG. 7 is a diagram illustrating a wafer process.

[Explanation of symbols]

 1001: Electron optics 1002: Wafer stage 1003: Interferometer for length measurement 1004: Electron optics control unit 1006: Wafer stage control unit 1021: Magnetic field shield 1022: Y stage 1023: X stage 1024: θZ stage 1025: Electrostatic chuck 1026: Fixed guide 1027a-d: Static pressure air bearing 1028a-d: Magnet unit XA: Arm MX: Mirror MY: Mirror ES: Electron gun EB: Electron beam ML1: First magnetic field lens ML2: Second magnetic field lens MS: Magnetic Shielding member 1100: vacuum chamber 1101: upper magnetic pole piece 1102: lower magnetic pole piece 1103: excitation coil 1104: upper perforated magnetic pole piece 1105: lower non-porous magnetic pole piece 1109: deflector 1110: deflector 1111: magnetic field compensation yoke 1021 ： Stage surface plate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01J 37/20 H01J 37/305 B 5F056 37/305 H01L 21/30 541L F-term (Reference) 2F078 CA02 CB05 CB18 CC02 CC20 HA11 2H097 AA03 BA10 CA16 LA10 5C001 AA03 AA08 CC06 5C033 DD04 DD09 DE07 5C034 BB02 BB06 5F056 EA08 EA12 EA14

Claims (19)

[Claims] An electron optical column including an electron lens for converging a charged particle beam and a deflector for deflecting the charged particle beam; a surface plate; a sample stage movable on the surface plate; Using a charged particle beam exposure apparatus including a magnetic force unit for applying a preload to the sample stage and a leakage magnetic field shield unit for shielding a leakage magnetic field from the magnetic force unit, the sample is placed on the sample stage. A charged particle beam exposure method, comprising: placing the sample and drawing a pattern on the sample using the charged particle beam. 2. A charged particle beam exposure apparatus for drawing a pattern on a substrate using a charged particle beam, comprising: a platen made of a magnetic material; and a substrate placed on the platen and moved in a vacuum along the platen. A stage, provided at a facing portion of the stage facing the surface plate,
A fluid bearing for floating the stage from the surface plate with a pressurized fluid; magnetic force means provided on the facing portion to apply a suction force between the surface plate and the stage; and an upper portion having a predetermined opening. A magnetic pole lens having a pole piece and a lower pole piece, wherein the charged particle beam is converged on the substrate disposed between the upper pole piece and the lower pole piece; A charged particle beam exposure apparatus, wherein the piece is formed of a magnetic material having a high magnetic permeability, and has a magnetic lens provided with the lower pole piece between the magnetic force means and the substrate. 3. The charged particle beam exposure apparatus according to claim 2, wherein the lower pole piece is formed of a non-conductive magnetic material. 4. The charged particle beam exposure apparatus according to claim 3, wherein said lower pole piece is made of ferrite. 5. The charged particle beam exposure apparatus according to claim 2, wherein the lower pole piece has a plate shape. 6. The stage according to claim 2, wherein a magnetic shield member is provided between the magnetic force means and the lower magnetic pole piece so as to cover the magnetic force means.
A charged particle beam exposure apparatus according to any one of claims 1 to 5. 7. The charged particle beam exposure apparatus according to claim 6, wherein the magnetic shield member is made of permalloy. 8. The charging device according to claim 2, wherein the size of the lower magnetic pole piece viewed from the substrate side is larger than that of the magnetic force means. Particle beam exposure equipment. 9. The apparatus according to claim 2, wherein the size of the lower pole piece viewed from the substrate side is larger than that of the opening of the upper pole piece.
Item 2. A charged particle beam exposure apparatus according to item 1. 10. A charged particle beam exposure method using the charged particle beam exposure apparatus according to any one of claims 2 to 9, wherein a substrate is mounted on the stage of the charged particle beam exposure apparatus. And drawing a pattern on the substrate. 11. A stage device used in a charged particle beam exposure apparatus that draws a pattern on a substrate by using a charged particle beam, comprising: a surface plate made of a magnetic material; A moving stage; a fluid bearing for supporting the stage on the surface plate; magnetic force means for applying an attractive force between the surface plate and the stage; and a magnetic field for converging the charged particle beam on the substrate. A pole piece provided on the stage, which constitutes a part of a lens,
A stage device, wherein the pole piece is provided between the magnetic force means and the substrate. 12. The stage device according to claim 11, wherein the pole piece is formed of a non-conductive magnetic material. 13. The stage device according to claim 11, wherein the pole piece is formed of a magnetic material having a high magnetic permeability. 14. The stage device according to claim 11, wherein the pole piece is formed of ferrite. 15. The stage apparatus according to claim 11, wherein the pole piece has a plate shape. 16. The stage according to claim 11, wherein a magnetic shield member is provided between the magnetic force means and the magnetic pole piece so as to cover the magnetic force means. The stage device according to claim 1. 17. The stage device according to claim 16, wherein the magnetic shield member is formed of permalloy. 18. The stage device according to claim 11, wherein the size of the pole piece as viewed from the substrate side is larger than that of the magnetic force means. 19. A manufacturing method for manufacturing a device using the charged particle beam exposure apparatus according to claim 2 in a part of a process, wherein a resist is applied to a substrate. A method for manufacturing a device, comprising: a step of drawing a pattern on a substrate coated with a resist by the charged particle beam exposure apparatus; and a step of developing the substrate on which the pattern is drawn.