JP2002164299A - Substrate-heating equipment and substrate-processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-heating equipment which comprises a substrate temperature measuring means which can detect the radiation energy, even from a low temperature substrate in the presence of disturbances penetrated through the substrate and can make accurate measurement of the temperature, and also to provide a substrate-processing equipment using the substrate-heating equipment. SOLUTION: The substrate-heating equipment comprises a substrate 12 to be processed, a substrate mounting table 11, and an infrared lamp heater 13 using infrared rays disposed on the opposite side from the substrate-mounting table 11. The substrate temperature measuring means for measuring the temperature of the substrate 12 to be processed, consists of a temperature sensor or temperature sensor receiving section 16 for measuring the temperature of the substrate 12 to be processed by detecting the radiation energy from the substrate 12 and is provided on the substrate mounting table 11 of the substrate. In the substrate temperature measuring means, between the infrared lamp heater 13 and the substrate 12 to be processed, at least a double structure of glass boards 14b and 14c which have the same optical characteristics is installed, apart from a protective tube of the infrared lamp heater 13 itself, at least at the time of measuring the substrate temperature, and the temperature of the glass board 14c disposed closer to the substrate 12 to be processed is kept sufficiently lower than that of the substrate 12 to be processed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention detects radiation energy from a substrate such as a semiconductor substrate or the like which is mounted on a substrate mounting jig and is heated by a radiation heating heater or a hot plate using infrared rays. The present invention relates to a substrate heating apparatus provided with a substrate temperature measuring means suitable for measuring a temperature, in particular, a substrate temperature in a low temperature region, and a substrate processing apparatus using the substrate heating apparatus.

[0002]

2. Description of the Related Art In order to accurately measure and monitor a substrate temperature by detecting radiation energy from a substrate such as a semiconductor substrate heated by a radiation heater as described above, the following (1) to (3) There are various problems like.

(1) Problems in temperature measurement using radiant energy in a low-temperature region (when measuring substrate temperature with radiant energy of a wavelength of about 1 μm which is opaque to general Si). In general, when measuring the temperature of a Si substrate by detecting radiation energy from the substrate, Si is 1 μm as shown in FIG.
It has the property that it is almost opaque to light of m or less, and that the emissivity does not change significantly with changes in temperature. Therefore, a sensor that receives wavelength energy of about 1 μm is generally used. Therefore, as shown in FIG. 3A, the Si substrate 102 mounted on the substrate mounting pins 104 is used.
When the temperature sensor receiving unit 103 for receiving radiant energy having a wavelength of 1 μm or less radiated from the infrared lamp 101 is disposed on the opposite side of the infrared lamp 101 with respect to the Si substrate 102, the radiant energy having a wavelength of 1 μm or less from the infrared lamp 101 is Blocked at 102, it does not reach the temperature sensor receiving unit 103. However, in this case, as the temperature of the substrate decreases, as shown in FIG. 2, the sensitivity itself decreases because the energy itself emitted from the substrate rapidly decreases,
There is a problem that the temperature cannot be measured. In actuality, when measuring temperature with radiant energy, it is quite difficult due to the sensitivity of the sensor below 400 ° C, and at present it is almost impossible to measure temperature below 250 ° C even if a considerable error is allowed. It is.

(2) A problem when disturbance transmitted through the substrate is received by the sensor. In order to avoid the above-described problem, when measurement is performed at a high energy wavelength even at a low temperature, for example, at a radiation energy of about 5 μm, as shown in FIG. 3B, the Si substrate 102 mounted on the substrate mounting pins 104 is used. When the quartz glass plate 105 is placed between the infrared lamp 101 and the infrared lamp 101, the energy of the wavelength of about 5 μm does not pass through the quartz glass, so that the temperature sensor receiving unit 103 does not receive the energy of the wavelength 5 μm from the infrared lamp 101. However, the quartz glass plate 1
05 is heated and its surface is radiated at a wavelength of 5 μm
Since a certain amount of radiation energy passes through the Si substrate 102 and reaches the temperature sensor receiving unit 103, the temperature sensor receiving unit 103 cannot measure the accurate substrate temperature of the Si substrate 102.

For example, in the case of FIG. 3, if the temperature of the Si substrate 102 is t ₁ ° C and the temperature of the infrared lamp 101 is t ₂ ° C,
The energy E received by the temperature sensor receiving unit 103 is expressed by the following equation. (Here, energy only within the detection wavelength of the temperature sensor is considered.) E = E ₁ + E ₂ Here, E ₁ : radiation energy (W /
m ² ) E ₁ = ε ₁ × 5.67 ｛(t ₁ +273) / 100｝ ⁴ E ₂ : of the radiation energy emitted by the infrared lamp 101, the energy (W / m ² ) transmitted through the Si substrate 102 E ₂ = ε ₂ × α ₂ × 5.67 {(t ₂ +273) / 100} ⁴ α ₂ : The transmittance of infrared rays when the temperature of the Si substrate 102 is t ₂ ° C. If there is no transmission, E ₂ = 0, so E = E ₁
Becomes

When there is transmission, E = E ₁ + E ₂ , E ₂ > 0
When t ₂ ≫t ₁ (in general, when the substrate is heated by an infrared lamp, t ₂ ≫t ₁ ), even if the transmittance α ₂ is sufficiently small, E ₂ becomes considerably large, so that the S / N ratio becomes That is, E ₁
/ E ₂ becomes small, and accurate measurement cannot be expected.
When the temperature difference between t ₂ and t ₁ is large or α ₂ is large,
There was a problem that the noise became too large and measurement became impossible. In FIG. 2, for example, when a measurement wavelength of 2 μm is used, the temperature of the Si substrate 102 is 400 ° K, the disturbance is 500 ° K, but the transmittance of the Si substrate 102 is 95%,
Radiation energy of substrate S = 1.1 × 10 ⁵ , 500 ° K
Stray light (noise) N = 1.7 × 10 ⁶ × 0.95, that is, even if the stray light at 500 ° K is very small, for example, 1%
It can be seen from the following equation that accurate substrate temperature measurement is not possible in the case of stray light. N / (S + N) = (1.7 × 10 ⁶ × 0.95 × 0.0
1) / (1.1 × 10 ⁵ + 1.7 × 10 ⁶ × 0.95 ×
0.01) = 0.128, and 13% becomes a noise component.

(3) When disturbance (stray light) enters the sensor receiving section, the S / N ratio decreases, and accurate temperature measurement cannot be performed. In addition to the above (2), disturbances are all higher than the temperature of the substrate, or at least close to the substrate temperature even if the temperature is lower, or infrared rays emitted from those having a large surface area to be emitted. When such light is diffusely reflected and reaches the temperature sensor receiving section through various paths, the S / N ratio is reduced as disturbance, and accurate temperature measurement cannot be performed.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and detects a radiation energy from a substrate accurately even in a low-temperature region substrate, even if there is a disturbance transmitted through the substrate. An object of the present invention is to provide a substrate heating device having a substrate temperature measuring means capable of measuring and a substrate processing apparatus using the substrate heating device.

[0009]

According to the first aspect of the present invention, there is provided a substrate processing jig, a substrate mounting jig for mounting the processing substrate, and a substrate mounting jig. A radiant heating heater using at least infrared rays disposed on the opposite side to the temperature sensor or a temperature sensor receiving unit for detecting radiant energy from the substrate to be measured and measuring the temperature of the substrate to be treated In the substrate heating apparatus installed on the opposite side of the radiant heating heater with respect to the substrate to be processed, at least at the time of measuring the substrate temperature, the protective tube of the radiant heating heater itself is provided between the radiant heater and the substrate to be processed. , And at least two glass bodies are provided, and the glass body closest to the substrate to be processed is maintained at a temperature sufficiently lower than the temperature of the substrate to be processed or has a mechanism for maintaining the temperature.

Since at least two glass bodies having optically the same characteristics are provided between the radiation heating heater and the substrate to be processed, the glass body absorbs a wavelength region detected by a temperature sensor or a temperature sensor receiving unit. When the wavelength is set to the wavelength range to be set, the radiation energy in the set wavelength range from the radiation heating heater is almost absorbed by the first glass body of the two glass bodies. Does not reach the temperature sensor or the temperature sensor receiver.

By maintaining the temperature of the second glass body at a temperature sufficiently lower than the temperature of the substrate to be processed,
The effect of radiation energy from here can be eliminated. Accordingly, the substrate temperature can be measured with high accuracy without the radiation energy in the wavelength region detected by the temperature sensor or the temperature sensor receiving unit from the radiation heating heater affecting the temperature measurement. Note that the above-mentioned glass body may have optically the same characteristics, or may be one that does not transmit the reception wavelength region of the sensor as long as the cooling mechanism of at least the second glass body is perfect. In addition, the same characteristics here do not include those that vary depending on the thickness of the glass body.

In order to make the cooling mechanism for the second glass body simpler, the wavelength of light transmitted through the first glass body is set such that the light transmitted through the first glass body is completely transmitted through the second glass body. The region may be slightly wider than the first body as shown in FIG. 11 (in FIG. 11, (a) shows the light transmittance state of the first glass plate, and (b) shows the second glass plate). The light transmittance state of the glass plate is shown as follows: the wavelength region λ _A that is completely transmitted by the first glass plate, the wavelength regions λ _B , and λ _{C that} is slightly transmitted by the first glass plate. The wavelength region λ that is completely transmitted covers the wavelength regions λ _A , λ _B , and λ _C λ⊇λ _A + λ _B + λ _C
Has become.) This prevents the second glass from being overheated by the transmitted light of the first glass. However, also in this case, the second glass is overheated by the radiant heat generated by overheating the first glass itself. Therefore, the cooling mechanism only needs to take away the heat of that amount.

Further, in the apparatus for heating a substrate according to claim 1, a radiant heating heater is provided on a temperature sensor or a temperature sensor receiving portion which detects radiant energy from a substrate to be processed and measures the temperature of the substrate. Not to be placed. As a result, the radiant energy of the wavelength of the measurement region of the temperature sensor or the temperature sensor receiving unit that has been transmitted slightly is not directly received by the temperature sensor or the temperature sensor receiving unit, thereby enabling temperature measurement with a small error.

According to a second aspect of the present invention, in the substrate heating apparatus according to the first aspect, the wavelength of the radiant energy measured by the temperature sensor or the temperature sensor receiving unit is a wavelength within a wavelength range that hardly transmits the glass body. There is a feature.

As described above, the wavelength of the radiant energy measured by the temperature sensor or the temperature sensor receiving portion is set within a wavelength range where the glass body hardly transmits, and a cooling mechanism is provided on the second glass body to process the object to be measured. By sufficiently cooling the temperature of the substrate, the radiation energy of the measurement wavelength of the temperature sensor or the temperature sensor receiving unit radiated from the radiant heater is cut off by the glass body, or the glass body itself is overheated to overheat. Without emerging from the body,
It does not reach the temperature sensor or the temperature sensor receiver.

According to a third aspect of the present invention, a substrate to be processed is provided;
A substrate mounting jig for mounting the substrate to be processed, and a radiant heating heater using at least infrared rays disposed on the opposite side of the substrate mounting jig with respect to the substrate to be processed. A substrate heating apparatus in which a temperature sensor or a temperature sensor receiving unit that detects radiation energy from a substrate to be processed and measures the temperature of the substrate to be processed is provided on the substrate mounting table jig side with respect to the substrate to be processed; , Characterized in that the temperature sensor or the temperature sensor receiving portion is covered with multiple tubular tubes.

As described above, since the temperature sensor or the temperature sensor receiving section has a structure covered with multiple cylindrical tubes, the temperature sensor or the temperature sensor receiving section does not directly receive external heat rays (radiant energy). The influence of the external heating wire on the measurement temperature can be eliminated as much as possible.

According to a fourth aspect of the present invention, in the substrate heating apparatus according to the third aspect, the temperature sensor or the temperature sensor receiving portion has a structure in which the temperature sensor or the temperature sensor receiving portion is covered with a cylindrical tube having a high reflectance on the outer peripheral surface. And

As described above, since the temperature sensor or the temperature sensor receiving portion is structured so as to be covered with the cylindrical tube having a high reflectance on the outer peripheral surface, the external infrared rays are reflected on the outer peripheral surface of the cylindrical tube, and thus the temperature sensor or the temperature sensor is detected. The receiving unit is not directly affected and can minimize the influence of the external infrared rays on the measured temperature. Actually, since at least the inner peripheral surface of the cylindrical tube has a high emissivity surface, the surface having a high emissivity has a high absorption rate of light (infrared rays). Can be eliminated.

According to a fifth aspect of the present invention, there is provided a substrate processing apparatus which includes a substrate heating means for heating a substrate and performs a predetermined process on the substrate.
The substrate heating device according to any one of the above is used.

As described above, by using the substrate heating device according to any one of claims 1 to 4 as the substrate heating means of the substrate processing device, the substrate temperature can be accurately and quickly controlled even in a low temperature region by the radiation energy from the substrate to be processed. , And appropriate substrate processing can be performed.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 4 is a diagram showing a schematic configuration example of a substrate processing apparatus using the substrate heating apparatus according to the present invention.
The present substrate processing apparatus 10 has a substrate mounting table 11 disposed therein,
The substrate to be processed 12 is mounted on the substrate mounting table 11. The substrate mounting table 1 faces the substrate 12 to be processed.
An infrared lamp heater 13 is disposed on the opposite side of the substrate 1, and a glass plate 14 is disposed on a side of the infrared lamp heater 13 facing the substrate 12, and the opposite side is covered with a heater cover 15. The glass plate 14 has a structure in which a space 14a is formed therein, and a pair of plates 14b and 14c arranged in parallel with the space 14a interposed therebetween are integrally formed. Is a glass plate 2
It has a heavy structure.

The cooling gas CG can flow through the space 14a of the glass plate 14, and the surfaces and the outer surfaces of the plates 14b and 14c facing the space 14a do not cause irregular reflection. So that it is formed on a mirror surface. In addition, a cooling space 20 through which a cooling medium CW (for example, cooling water) can flow is formed between the outer surface of the heater cover 15 and the inner wall surface 10a of the substrate processing apparatus 10. A sensor receiving unit (or temperature sensor) 16 of a temperature sensor for detecting the temperature of the substrate 12 to be processed from below on the substrate mounting table 11.
The temperature sensor arrangement hole 17 in which is disposed is formed.
The substrate mounting table 11 has a substrate heating heater 19 inside.
Is arranged.

As shown in FIG. 5, a double cylindrical tube 18 is disposed in the temperature sensor arrangement hole 17, and radiant energy from the substrate 12 to be processed is detected at a deep portion of the cylindrical tube 18. A sensor receiving section 16 of a temperature sensor for measuring the temperature of the substrate 12 is disposed. Further, the outer peripheral surface of the cylindrical tube 18 is formed into a mirror surface so as to have a high reflectance, and the inner peripheral surface is treated to have a surface state close to a black body in order to prevent stray light. The tubular tube 18 is not limited to a double tube, but may be a multiple tube or a single tube.

In the substrate processing apparatus having the above-described structure, infrared rays are radiated from the infrared lamp heater 13 toward the substrate 12 to be processed, and the process gas PG is introduced from the gas inlet 10b in the processing chamber. A process such as film formation is performed on the surface, and air is exhausted from the exhaust port 10c. The temperature of the target substrate 12 is detected by receiving the radiant energy from the target substrate 12 using a sensor disposed at the back of a cylindrical tube 18 disposed in a temperature sensor placement hole 17 formed in the substrate mounting table 11. This is performed in the section 16.

The infrared light from the infrared lamp heater 13 is
Irradiation is performed on the substrate to be processed 12 through the glass plate 14. Here, the description will be made on the assumption that the glass plate 14 is made of, for example, quartz glass. As shown in FIG. 6, quartz (glass) hardly transmits light (infrared rays) in a region having a wavelength exceeding 4 μm. This is because most of the light (infrared rays) in this wavelength range is absorbed by quartz glass as heat. The principle of the present invention will be described based on the above characteristics.

In measuring the temperature of the substrate 12, the glass plate 14 is set so that the sensor receiver 16 does not receive light (infrared rays) transmitted from the infrared lamp heater 13 through the substrate 12. If the transmittance of the constituent quartz glass can be made as small as possible, a wavelength of zero transmittance is used. The wavelength is preferably 4 μm or more in the case of quartz glass having characteristics as shown in FIG.

The substrate 12 to be processed is heated by utilizing the energy transmitted through the quartz glass constituting the glass plate 14 (in the case of the quartz glass described above, the wavelength is 4 μm or less; Wavelength of 5 μm or less).

The light energy radiated from the infrared lamp heater 13 and absorbed by the glass plate 14 is absorbed by the first plate 14b as much as possible. Since the second plate 14c faces the processing chamber, if heated, not only adversely affects the process, but also the wavelength 4 radiated from the surface of the second plate 14c due to heating.
This is because the energy of μm or more passes through the substrate to be processed 12 and reaches the sensor receiving unit 16 and affects the temperature of the measurement substrate. Therefore, the wavelength of the energy for heating the glass plate body 14 is set so as to be absorbed by the first sheet as much as possible.
The thickness of the second plate 14b may be increased.

Here, the first plate 14b and the second plate 14b
If the glass material of 14c is the same, the first plate
The wavelength region λ of FIG._AInfrared
The line also passes through the second plate 14c, so that the red
The outer plate does not heat the second plate 14c. I
However, a wavelength range where the first plate 14b is slightly transmitted.
λ _B, Λ_CThe second plate 14c is heated by the infrared rays
I will. Therefore, the wavelength range in which the second plate 14c is completely transmitted.
As shown in FIG._B+ Λ_A+ Λ_C
That is, the transmission range of the second plate 14c is increased.
In this way, the infrared rays transmitted through the first plate 14b
The second plate 14c is no longer heated (one plate
Wavelength region λ slightly transmitting through eye plate 14b_B, Λ_CInfrared
The line completely penetrates the second plate 14c).

When all wavelengths of the second heating component are absorbed by the first plate 14b, the infrared light has only a wavelength that transmits (partially reflects) through the second plate 14c. Does not generate heat due to infrared rays transmitted through the first plate 14b. Therefore, it is possible to prevent the process gas PG flowing through the second plate 14c from being adversely affected by the infrared rays transmitted through the first plate 14b, or from being adversely affected by the process gas PG. Further, no radiant energy affecting the substrate measurement temperature is emitted from the front of the second plate 14c.

However, actually, the first plate 14b itself is heated, and a new infrared ray is emitted from the first plate 14b, which passes through the second plate 14c to the temperature sensor receiving section 16. May be reached. In order to prevent the first and second plate members 14b and 14c from being abnormally heated,
Cooling gas CG is supplied to a space 14a between the plate 14b and the plate 14c. This can also prevent the above problem. That is, by preventing heating of the first plate 14b itself (of course, the plate 14c
Is also indirectly prevented from heating the plate member 14b by simultaneously cooling the plate member 14b.) The infrared light emitted from the plate member 14b is reduced, and the second plate member 14c itself is cooled to emit the infrared light from the plate member 14c. Infrared energy can be reduced to a negligible level.

If a method of detecting radiant energy having a wavelength of 4 μm or more from the substrate 12 is adopted for detecting the temperature of the substrate 12, the radiant energy from the infrared lamp heater 13 in this wavelength region constitutes the glass plate 14. For this reason, the wavelength of 4 μm or more is hardly emitted from under the second plate 14c.

As described above, the substrate 12 to be processed is passed through the plates 14b and 14c of the glass plate 14 which are double glasses.
Is passed, but light in a wavelength region for measuring the temperature of the substrate 12 to be processed is not transmitted.
The sensor receiving section 16 can receive radiant energy only from the substrate 12 to be processed, and can measure a correct temperature. Further, since the wavelength used for reception by the sensor receiving unit 16 is as long as 4 μm or more, even when the temperature is low, the substrate 1
Since high energy is generated from 2, the measurement from a low temperature is also possible.

As described above, among the wavelengths of the light emitted from the infrared lamp heater 13, at least the wavelength of the radiant energy used for temperature measurement (the wavelength received by the sensor receiver 16) corresponds to the plate members 14 b and 14 c of the glass plate member 14. By preventing the transmission, the sensor receiving unit 16 can remove the influence of the radiation energy emitted from the infrared lamp heater 13 and transmitted through the substrate 12 to be processed. But,
In general, there are other sources of stray light reaching the sensor receiving unit 16. It is a substrate heating heater 19 built in the substrate mounting table 11.

As described above, the source of the stray light is the substrate 1 to be processed.
2 where the temperature is higher than 2, the temperature is lower than, but close to, the substrate 12 to be processed, or the heat generation area is large. The target here is the infrared lamp heater 13 in the upper part and the built-in The main component is a substrate heating heater 19 (or disposed below the substrate mounting table 11).
Light (infrared light) emitted from only the substrate to be processed by completely removing stray light emitted from these two places through various routes
If only the sensor receiving section 16 can receive only the temperature of the substrate to be processed, the temperature of the substrate to be processed can be measured more accurately.

In the present embodiment, the infrared lamp heater 13 and the substrate heating heater 19 are the portions near the temperature of the substrate to be processed or higher than the temperature of the substrate to be processed. However, in an actual example, there are other such portions. If this is the case, new measures against infrared rays will be required.

FIG. 7 is a view for explaining the path of the heat energy emitted from the substrate heating heater 19. The substrate heating heater 19 and the substrate mounting table 11 are heated, and the infrared light L emitted from the substrate mounting table 11 is reflected by the infrared light L1 reflected at the lower portion of the processing target substrate 12 and the infrared light L1 transmitted through the processing target substrate 12 and the glass plate body 14 The infrared rays L2 and L3 reflected by the bodies 14c and 14b and the infrared ray L4 reaching the heater cover 15
Break up into

The infrared rays L1 emitted from the substrate mounting table 11 and reflected at the lower part of the substrate to be processed 12 can be almost ignored from the experience of the related art. The infrared rays L2 transmitted through the substrate to be processed 12 and reflected by the plates 14c and 14b have little reflectance of the glass, and thus can be almost ignored, but the infrared rays irregularly reflected from the infrared rays L2 are considered to be the main sources of stray light to the sensor. . Here, since the quartz glass that does not transmit infrared rays in the wavelength range for temperature measurement is adopted as the glass constituting the plates 14c and 14b, the infrared rays L3 and L4 do not interfere with the temperature measurement.

The influence on the sensor receiving section 16 due to stray light due to the reflection between the substrate 12 to be processed and the substrate mounting table 11 can be neglected in the conventional experience. As shown in FIG. 8, the stray light due to the reflection from the processing target substrate 12 has an upper surface 11a of the substrate mounting table 11.
And the infrared light L1 reflected by the lower surface 12a of the substrate 12 to enter the sensor receiver 16. In the measurement using the conventional light having a wavelength of 1 μm, there is no influence of the stray light. Therefore, it is considered that the present invention has the same layout and the same optical characteristics (described below) as the conventional one, and thus is not affected.

The sensor receiver 16 (or the temperature sensor) is provided on an extension of the sensor receiver 16 (or the temperature sensor) so as not to receive the direct heat rays from the infrared lamp heater 13 and the substrate heating heater 19 even if the sensor receiver 16 (or the temperature sensor) receives the heat. It is better not to install the infrared lamp heater 13 in the apparatus. In order to prevent direct heat rays from the substrate heating heater 19, the cylindrical tube 18 in which the sensor receiving section 16 (or the temperature sensor) is disposed is used to measure the temperature of the substrate 12 in the temperature sensor arrangement hole 17 when measuring the temperature. Extend to the vicinity. Then, the sensor receiving unit 16 (or temperature sensor) is installed inside the tubular pipe 18 and the sensor receiving unit 16
(Or temperature sensor) so that infrared rays do not reach the substrate heating heater 19 as directly as possible.

From the substrate heating heater 19 to the substrate to be processed 12
In order to prevent the heat rays radiated to the side from being irregularly reflected, the surface of the plate body 14c of the glass plate body 14 should be as flat and smooth as possible, the infrared rays should be prevented from being irregularly reflected as much as possible, and the reflection should be low and high in transparency. .

Here, the infrared ray L2 considered as a main stray light will be discussed. The heat rays entering the sensor receiving unit 16 while being reflected at a large angle with respect to the signal transmission direction of the sensor receiving unit 16 pass through the optical fiber during transmission by the optical fiber in the middle, and escape. Does not reach the sensor part (the optical fiber transmits only the light that is totally reflected on the outer wall of the fiber, and the one that is larger than the total reflection angle is transmitted and escapes to the outside of the fiber). The effect can be prevented.

FIG. 9 is a diagram showing the state of propagation of infrared light incident on the sensor receiving section. As shown in FIG. 9, the incident angle of the infrared ray L incident on the sensor receiving unit (optical fiber) 16 disposed in the cylindrical tube 18 is within the area where the sensor receiving unit 16 totally reflects as shown in FIG. If so, the incident infrared light L is totally reflected and thus has no transmission loss and reaches the sensor unit. In addition, the infrared ray L incident at an angle outside the total reflection area
As shown in FIG. 9B, the infrared ray is divided into an infrared ray La that passes through the sensor receiving section 16 and an infrared ray Lb that reflects, so that the infrared ray passing through the sensor receiving section 16 in the direction of the sensor section is almost attenuated. Another reason for arranging the sensor receiving unit 16 at the back of the tubular tube 18 is that by arranging the sensor receiving unit 16 at the back, a total reflection component (a component only from the substrate to be measured directly without disturbance).
This is because the light can be received. In this way, even the slight possibility of the component of the stray light L2 can be almost eliminated.

When the cylindrical tube 18 is always at the position shown in FIGS. 4 and 5, the temperature of the sensor receiving section 16 and the cylindrical tube 18 rises with the passage of time, and eventually becomes substantially the same as the substrate heating heater 19. The temperature rises to the temperature. After all, the radiation energy radiated from the tubular tube 18 enters the sensor receiving unit 16 through a path that reflects, for example, on the lower surface of the substrate, and the energy is larger than the substrate 12 to be processed.
This means that the temperature of the substrate mounting table 11 is measured rather than the above temperature, and almost no correct temperature can be measured. The following are taken as countermeasures.

The sensor receiving section 16 is inserted into a predetermined measurement position (temperature sensor arrangement hole 17) in the substrate mounting table 11 only at the time of temperature measurement (always at the position indicated by the dotted line in FIG. 4;
Insert up to the position shown by the solid line during measurement). A plurality of tubular tubes 18 are provided so that at least the innermost tube of the tubular tubes is not heated by the substrate heating heater 19. In addition, at least the outer surface of the outermost cylindrical tube is polished so as to have a large reflectance (the outside of all the tubes is preferably large in reflectance). 11
To the outside, prevent heating, and actively cool using gas or the like.

The inside of the tubular tube 18 is subjected to processing for increasing the emissivity in order to prevent stray light from reaching the sensor receiving section 16. Further, by installing the sensor receiving unit 16 at the back of the cylindrical tube 18, the infrared light directly incident on the sensor receiving unit 16 is changed to the infrared light Lc from only the substrate 12 to be processed as shown in FIG. The stray light Ld is almost absorbed by the inner wall of the tubular tube 18.

By taking the above measures, the innermost tube of the cylindrical tube 18 can be kept from being heated from the outside,
The temperature of the target substrate 12 can be measured more accurately. Also, the sensor receiving unit 16 (or a temperature sensor)
If the temperature of the substrate 12 to be processed can be measured in a short time by inserting the It may be a tube. Further, by disposing the sensor receiving section 16 in the multiple tubular pipes 18 or the single tubular pipe, it is possible to prevent the sensor receiving section 16 itself (optical fiber rod) from being heated and emitting new infrared rays inside. (It is important to prevent heating of the fiber rod because a significant proportion of the infrared light generated inside reaches the sensor. The rate of arrival of the infrared light depends on, for example, the infrared light emitted from a point in the rod, which is totally reflected from that point. Since all of the information transmitted to the sensor unit reaches the sensor unit, the ratio is large.)

As shown in FIG. 1, light having a wavelength of 1.5 μm or more is translucent to the Si substrate. When utilizing this to measure the temperature in the low temperature range, the radiant energy becomes very small as the temperature decreases as described above. However, even if the temperature of the object to be measured is low, using a wavelength that emits strong energy at that temperature enables more accurate temperature measurement. As shown in FIG.
(227 ° C.), since there is an energy peak per 4 μm, 4 μm is required to measure the temperature around 500 ° K.
The sensitivity is much better when a wavelength of about m is used (for example, about 10 ⁶ times the wavelength of 1 μm). Of course, it can be measured at this wavelength even at higher temperatures.

Generally, this wavelength is not adopted because stray light enters the sensor or sensor receiving section from various directions, and if the energy of the stray light is large, the S / N ratio becomes small, so that measurement becomes impossible. It is. However, in the present invention, since stray light can be almost certainly suppressed,
The above wavelengths can be employed. However, 1.5-4μ
In the case of m, light transmitted from the upper infrared lamp heater 13 exists, so that it is preferably 4 μm or more. With a thickness of 4 μm or more, transmission can be prevented by the double plate members 14 b and 14 c of the glass plate member 14 described above.

When a wavelength of 4 μm or more is used for measuring the temperature of the substrate 12 to be processed, there are further advantages as follows.
As shown in FIG. 11, when the general light transmittance of quartz glass is represented by the vertical axis and the wavelength is represented by the horizontal axis, light having a wavelength of 4 μm or more hardly passes through the quartz glass. If used for temperature measurement, disturbance (stray light) coming from at least the primary side of quartz glass can be almost certainly prevented.

In the case of the substrate processing apparatus shown in FIG. 4, the infrared lamp heater 13 is located above the substrate 12 to be processed and heats the substrate 12 from above. The substrate to be processed 12 takes a heating process in which the temperature is gradually increased from the upper surface to the lower surface. In order to control the temperature of the substrate to be processed 12 with good responsiveness, it is preferable to measure the temperature of the top surface of the substrate to be processed 12 where the temperature is most heated. Becomes possible. This is a very important factor when, for example, the target substrate 12 is immediately heated to a certain temperature. The above can be achieved by using a wavelength having a good transmittance to the Si substrate of 1.5 μm or more.

For example, an exothermic reaction may occur on the processing target substrate 12 during film formation and etching of the processing target substrate 12, and the substrate temperature may rise. In order to properly control the process, the temperature of the substrate to be processed 12 must be controlled while grasping the temperature due to the exothermic reaction. That is, by using a translucent wavelength for the substrate to be processed 12, the temperature of the surface of the substrate to be processed 12 can be measured from the back of the substrate to be processed 12, which can be achieved. As described above, by using a wavelength of 1.5 μm or more with good transmittance of the Si substrate, measurement at the surface temperature of the substrate to be processed becomes possible.

The following is a comparative example of a case where rapid heating or preheating is controlled using a thermocouple and a case where control is performed using a substrate heating apparatus according to the present invention.

When the temperature of the substrate to be processed is measured using a thermocouple, since the thermocouple must always be in contact with the substrate to be processed, heat escapes from the thermocouple itself during heating of the substrate to be processed. It takes time to reach a steady state. However, if the temperature is to be measured correctly in a rapid heating process such as rapid heating or preheating, the use of a thermocouple always causes a measurement delay due to the above reasons, and the feedback to the heating source cannot be made in time. / Sec does not help at all for a rapid temperature rise.

On the other hand, by using a substrate heating device for detecting the radiation energy from the substrate to be processed and measuring the temperature as in the present invention, the temperature of the substrate to be measured, which is the object to be measured by the temperature measurement, is measured. Since the temperature does not decrease, the correct temperature can be measured immediately, and fast responsive feedback can be provided. According to the present invention, radiation-type temperature measurement, which was conventionally impossible in a low-temperature region (400 ° C. or lower), becomes possible.
Preheating, annealing, and the like in a low-temperature region can be performed in a short heating time.

Further, when the actual process temperature is measured using a thermocouple, there is a problem that the temperature measuring part of the thermocouple is fused to the substrate to be processed. In addition, it is difficult to confirm that the temperature measuring part of the thermocouple is in contact with the substrate to be processed because the tip of the thermocouple is gradually bent, and it cannot be determined that the thermocouple is in contact at the same position. There is also. Therefore, if the contact is made by using a spring or the like or the rigidity of the thermocouple itself is increased, the amount of heat taken from the substrate to be processed is increased and the substrate to be processed is cooled. There was no. In addition, there is a problem that the contact causes contamination of the back surface of the substrate to be processed.

In the substrate heating apparatus shown in FIG. 4, a space 14a is formed inside the glass plate 14, and a pair of plates 14b, 1b arranged in parallel with the space 14a interposed therebetween.
4c is formed integrally, but the present invention is not limited to this. At least two glass bodies are provided near the substrate to be processed between the infrared lamp heater 13 and the substrate 12 to be processed. Should be fine. Further, the wavelength of the radiant energy measured by the sensor receiving unit 16 may be set within a wavelength range where the glass body hardly transmits.

Of the two glass bodies, the lower one (the glass body on the opposite side of the infrared lamp heater) is replaced by a cooled glass body when the temperature is raised, taken out, and replaced by a heated glass body when cooled. It may be.

In the above example, the sensor receiving section 16 is disposed in the substrate processing apparatus (chamber) 10, but the sensor or the sensor receiving section 24 may be disposed outside the substrate processing apparatus 10 as shown in FIG. Good. In FIG. 12, 21,
Reference numeral 22 denotes a glass body made of quartz glass, which heats the processing target substrate 12 mounted on the substrate mounting pins 23 with radiant energy of a wavelength transmitted from the infrared lamp heater 13 through the glass bodies 21 and 22. The sensor or sensor receiving unit 24 receives radiant energy emitted from the processing target substrate 12 and reaching through the window 25.

As a glass material constituting the window 25,
If CaF ₂ glass is used, radiant energy with a wavelength of 7 μm or less emitted from the substrate 12 to be processed almost passes through and reaches the sensor or the sensor receiving unit 24. Further, if BaF ₂ glass is used, the wavelength 1
The radiation energy of 0 μm or less almost passes through and reaches the sensor or the sensor receiving unit 24.

[0062]

As described above, the inventions described in the respective claims have the following excellent effects.

According to the first aspect of the present invention, at least two glass bodies having the same optical characteristics are provided between the radiation heater and the substrate to be processed, and the glass body close to the substrate to be processed is provided. Since the temperature is maintained at a temperature sufficiently lower than the temperature of the substrate to be processed or has a mechanism for maintaining the temperature, if the wavelength region detected by the temperature sensor or the temperature sensor receiving unit is set to the wavelength region absorbed by the glass body, The radiant energy of this set wavelength region from the radiant heater is 2
Since most of the glass body is absorbed by the first glass body, the radiant energy from the radiant heater in this wavelength range does not reach the temperature sensor or the temperature sensor receiving section. Also, by maintaining the second glass body at a sufficiently low temperature at which radiant energy is not emitted, there is no emission of radiant energy therefrom. Therefore, the substrate temperature can be measured with high accuracy without the temperature sensor radiated from the radiant heating heater or the radiation energy in the wavelength region detected by the temperature sensor receiving unit affecting the temperature measurement.

According to the second aspect of the present invention, by setting the wavelength of the radiation energy measured by the temperature sensor or the temperature sensor receiving portion to a wavelength within a wavelength range where the glass body hardly transmits, the radiation heating heater is provided. Since the radiation energy of the measurement wavelength of the temperature sensor or the temperature sensor receiving unit radiated from the glass substrate is cut off by the glass body and does not reach the temperature sensor or the temperature sensor receiving unit, accurate substrate temperature measurement can be performed.

According to the third aspect of the present invention, since the temperature sensor or the temperature sensor receiving portion has a structure covered with the multiple cylindrical tubes, the temperature sensor or the temperature sensor receiving portion does not directly receive the external heat ray and the temperature measured by the external heat ray. The effect on the substrate temperature can be eliminated as much as possible, and accurate substrate temperature measurement becomes possible.

According to the fourth aspect of the present invention, since the temperature sensor or the temperature sensor receiving portion has a structure in which the outer peripheral surface is covered with the cylindrical tube having a high reflectance, the external heat ray is formed on the outer peripheral surface of the cylindrical tube. It is not reflected and directly received, the influence of the external heat ray on the measurement temperature can be eliminated as much as possible, and accurate substrate temperature measurement becomes possible.

According to the fifth aspect of the present invention, by using the substrate heating device according to any one of the first to fourth aspects as the substrate heating means of the substrate processing apparatus, the substrate can be heated even in a low temperature region by radiation energy from the substrate to be processed. It is possible to accurately measure the temperature in a short period of time and perform appropriate substrate processing.

[Brief description of the drawings]

FIG. 1 is a diagram showing the wavelength / temperature dependence of the emissivity of Si.

FIG. 2 is a diagram showing a spectral radiance of a heater cover.

FIG. 3 is a diagram illustrating a schematic configuration example of a conventional substrate heating apparatus.

FIG. 4 is a diagram showing a schematic configuration example of a substrate processing apparatus using a substrate heating apparatus according to the present invention.

FIG. 5 is a diagram illustrating an example of an arrangement configuration of a temperature sensor receiving unit of the substrate processing apparatus according to the present invention.

FIG. 6 is a diagram showing the light transmittance of synthetic quartz glass.

7 is a diagram for explaining a path of light (heat) emitted from a substrate heating heater of the substrate processing apparatus shown in FIG.

8 is a diagram for explaining stray light due to reflection from a substrate to be processed in the substrate processing apparatus shown in FIG.

FIG. 9 is a diagram for explaining a light propagation state of a sensor receiving unit of the substrate processing apparatus shown in FIG.

FIG. 10 is a diagram for explaining a light propagation state of a sensor receiving unit of the substrate processing apparatus shown in FIG.

FIG. 11 is a diagram showing a relationship between light transmittances of glass plates of the substrate processing apparatus shown in FIG.

FIG. 12 is a diagram illustrating an example of an arrangement configuration of a temperature sensor receiving unit of the substrate heating apparatus according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 11 Substrate mounting table 12 Substrate to be processed 13 Infrared lamp heater 14 Glass plate 15 Heater cover 16 Sensor receiving unit 17 Temperature sensor arrangement hole 18 Cylindrical tube 19 Heater for substrate heating 20 Cooling space 21 Glass body 22 Glass body 23 substrate mounting pin 24 sensor or sensor receiving unit 25 window

Continuation of the front page (72) Inventor Yuji Araki 11-1 Haneda Asahimachi, Ota-ku, Tokyo F-term in Ebara Corporation (reference) 2G066 AC11 BA30 BA38 BB02

Claims (5)

[Claims] 1. A substrate to be processed, a substrate mounting jig for mounting the substrate to be processed, and a radiant heating heater using at least infrared rays disposed on the opposite side to the substrate mounting jig. A temperature sensor or a temperature sensor receiver for detecting the radiant energy from the substrate to be processed and measuring the temperature of the substrate to be processed is provided on the opposite side of the radiant heating heater with respect to the substrate to be processed. In the substrate heating apparatus, at least at the time of measuring the substrate temperature, at least two glass bodies are provided between the radiation heating heater and the substrate to be processed, except for a protective tube of the radiation heating heater itself, and A substrate heating apparatus, wherein the closest glass body is maintained at a temperature sufficiently lower than the temperature of the substrate to be processed, or has a mechanism for maintaining the temperature. 2. The substrate heating apparatus according to claim 1, wherein the wavelength of the radiant energy measured by the temperature sensor or the temperature sensor receiving unit is a wavelength in a wavelength range that hardly transmits the glass body. Substrate heating device. 3. A substrate to be processed, a substrate mounting jig for mounting the substrate to be processed, and at least infrared rays provided on the opposite side of the substrate to be processed with respect to the substrate to be processed. And a temperature sensor or a temperature sensor receiver for detecting the radiation energy from the substrate to be processed and measuring the temperature of the substrate to be processed with respect to the substrate to be processed. A substrate heating apparatus provided on a mounting table jig side, wherein the temperature sensor or the temperature sensor receiving section has a structure covered with multiple tubular tubes. 4. The substrate heating apparatus according to claim 3, wherein the temperature sensor or the temperature sensor receiving section is covered with a cylindrical tube having a high reflectance on the outer peripheral surface. 5. A substrate heating means for heating a substrate,
A substrate processing apparatus for performing a predetermined process on the substrate, wherein the substrate heating apparatus according to any one of claims 1 to 4 is used as the substrate heating unit.