JP2002161098A - Organocopper compound, mixed solution containing the compound and copper thin film formed using the solution - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an organocopper compound and a solution containing the same which are hardly decomposed in a storage state before film forming and have a long life, and further which have a higher film forming speed, decompose efficiently on a substrate to have high volatility and are excellent in adhesion with a ground film. SOLUTION: The organocopper compound is expressed by the formula (1), and it is obtained by coordinating 1,1,1,5,5,5-hexafluoro2,4-pentanedione and a compound having an alkynol group with a monovalent copper. In the formula, X1 and X2 are same to or different from each other, and they are each H, a 1-7C alkyl, a silyl group or a hydroxyl-containing group.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of depositing a copper (Cu) thin film used for wiring of a semiconductor device by metal organic chemical vapor deposition (Meta).
l Organic Chemical Vapor Deposition, MOC
It is called VD. ) An organic copper compound for producing by the method, a mixed solution containing the compound and MOCVD using the same
The present invention relates to a copper thin film produced by a method.

[0002]

2. Description of the Related Art As an organic copper compound used in the MOCVD method, a complex copper (I) tmvs. Liquid at room temperature capable of selective vapor deposition capable of satisfying a strict combination of strict chemical, structural and electrical requirements. hfac (tmvs is an abbreviation for trimethylvinylsilane and hfac is an abbreviation for hexafluoroacetylacetone anion) is well known (JP-A-5-202476). However, this compound has extremely low stability, easily decomposes at room temperature, changes into copper (II) (hfac) ₂ as a precipitate of metallic copper, and is significantly deteriorated. Therefore, it is difficult to stably supply this organic copper compound during film formation, and the reproducibility of film formation is poor.

[0003] In order to solve this problem, copper (I) at room temperature liquid copper (I) at room temperature showing a more stable vaporization rate than the above-mentioned organocopper compound and exhibiting excellent volatility and thermal stability.
fac (atms is an abbreviation for allyltrimethylsilane) is disclosed (JP-A-7-252266, JP-A-10-135154). On the other hand, when copper (I) hfac and (methoxy) (methyl) silyl refin ligand are contained and heated to the vaporization temperature, the electron donating ability of oxygen in (methoxy) (methyl) silyl refin ligand becomes copper and ( Methoxy)
A copper precursor compound that provides a stable bond with a (methyl) silylolefin ligand has been proposed (JP-A-10-195654). In this copper precursor compound,
The oxygen atom of the methoxy group mainly suppresses the volatility of the copper precursor compound, and can improve the temperature stability and life of the copper precursor compound.

[0004]

However, copper (I) tmv
s · hfac as well as copper disclosed in JP-A-7-252266 and JP-A-10-135154.
(I) atms.hfac and Japanese Patent Application Laid-Open No. 10-1956
All of the copper precursor compounds disclosed in Japanese Patent Publication No. 54 have the disadvantage that the film formation rate is lower than that of the physical vapor deposition method represented by the sputtering method, and the adhesion to the underlying film is poor.
An object of the present invention is to provide an organic compound which is hardly decomposed in a storage state and has a long life, and a mixed liquid containing the compound. Another object of the present invention is to provide an organic compound which has a high film formation rate, is efficiently decomposed on a substrate, has high volatility, and has excellent adhesion to a base film, and a mixed solution containing the compound. It is in. Another object of the present invention is to provide a high-purity copper thin film that is firmly adhered to a base film.

[0005]

The invention according to claim 1 is
1,1,1,5,5,5-hexafluoro- to monovalent copper
An organocopper compound represented by the following formula (1) in which 2,4-pentanedione is coordinated with a compound having an alkynol group. In addition, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione is also called hexafluoroacetylacetone (abbreviation hfac).

[0006]

Embedded image

However, X ₁ and X ₂ are each hydrogen,
Or, it is an alkyl group or silyl group having 1 to 7 carbon atoms, or contains a hydroxyl group, and X ₁ and X ₂ may be the same or different from each other.

The invention according to claim 3 is characterized in that monovalent copper contains 1,
An organocopper compound represented by the following formula (2) in which 1,1,5,5,5-hexafluoro-2,4-pentanedione is coordinated with a compound having an alkenol group.

[0009]

Embedded image

However, X ₃ , X ₄ , X ₅ , and X ₆ are hydrogen, an alkyl group having 2 to 3 carbon atoms, or a hydroxyl group, and X ₃ , X ₄ , X ₅ , X ₆ may be the same or different.

The organocopper compound of the invention according to claim 1 or 3 is 1,1,1,5,5,5-hexafluoro-2,4.
By combining pentanedione (hfac) with a compound having an alkynol group or an alkenol group;
The H group gives Cu an electron-donating property, and from this electron-donating property, the organic copper compound represented by the formula (1) or the formula (2) hardly decomposes in a storage state and exhibits high stability. Further, the compound represented by the formula (1) or the formula (2) creates steric hindrance by hfac and a compound having an alkynol group or an alkenol group, so that the film formation rate is high, and the compound is efficiently decomposed on the substrate to have high volatility. And excellent adhesion to the underlying film.

According to a fifth aspect of the present invention, there is provided an organic copper compound according to any one of the first to fourth aspects, trimethylvinylsilane (hereinafter referred to as "tmvs"), and trimethoxyvinylsilane (hereinafter referred to as "tmovs"). , Allyltrimethylsilane (hereinafter, referred to as "atms"),
Allyltrimethoxysilane (hereinafter, referred to as “atmos”), vinyloxytrimethylsilane (hereinafter, “vos”)
tms ”. ), Allyloxytrimethylsilane (hereinafter referred to as “automs”), 3-hexyne,
A mixture of butyne and one or more compounds selected from the group consisting of copper (I) hexafluoroacetylacetonate complexes coordinated with these.

In the mixed solution according to the fifth aspect, the decomposition of the organic copper compound is suppressed in the storage state before the film formation by increasing the π-bonding property of Cu, so that a long-life solution is obtained, It is presumed that the copper (I) complex is easily decomposed, whereby initial copper growth on the underlying film is likely to occur, and the growth rate of the copper thin film is increased.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION The organocopper compound of the present invention is prepared by adding 1,1,1,5,5,1 to the monovalent copper represented by the above formula (1).
5-hexafluoro-2,4-pentanedione (hfa
This is a compound in which c) is coordinated with a compound having an alkynol group or an alkenol group. The alkynol group is a general term for a group having both a triple bond and a hydroxyl group in a molecule, and the alkenol group is a general term for a group having both a double bond and a hydroxyl group in a molecule.

Examples of the compound having an alkynol group include 3-butyn-1-ol (HCＣＨCCH ₂ CH ₂ O).
H), 2-methyl-3-butyn-2-ol (HC≡C
C (CH ₃ ) ₂ OH), 2-butyne-1,4-diol (H
OCH ₂ C≡CCH ₂ OH), 2-butyn-1-ol (CH ₃ C≡CCH ₂ OH), 2,5-dimethyl-3-hexyne-2,5-diol ((CH ₃ ) ₂ C (OH ) C≡CC
(OH) (CH ₃ ) ₂ ), 3-hexyn-2-ol (CH ₃
CH ₂ C≡CCH (OH) CH ₃ ), 5-hexyn-1-ol (HC≡C (CH ₂ ) ₃ CH ₂ OH), 3-hexyne-
1-ol (CH ₃ CH ₂ C≡CCH ₂ CH ₂ OH), 2-
Hexin-1-ol (CH ₃ (CH ₂ ) ₂ C≡CCH ₂ O
H), 1-hexyne-3-ol _{(CH 3 (CH 2) 2} CH
(OH) C≡CH), 4-methyl-1-pentyn-3-ol ((CH ₃ ) ₂ CHCH (OH) C≡CH), 3-methyl-1-pentyn-3-ol (CH ₃ CH ₂ C (OH) (C
H ₃ ) C≡CH) or 4-trimethylsilyl-3-butyn-2-ol ((CH ₃ ) ₃ SiC≡CCH (OH) CH ₃ )
Any of the following. Examples of the compound having an alkenol group include cis-3-hexen-1-ol or trans-3-hexen-1-ol (CH ₃ CH _{2
CH = CH (CH 2) 2} OH) or 4-penten-1-ol _{(H 2 C = CH (CH} 2) 3 OH) and the like.

The mixed solution of the present invention is obtained by the above-mentioned formula (1)
Alternatively, it is prepared by dissolving the organic copper compound represented by the formula (2) alone or in an organic copper compound containing another solvent or another monovalent copper metal. Further, as described in claim 5, the mixed solution of the present invention is prepared by adding tmvs, tmovs, atm to a base organic copper compound mixed solution.
It is also prepared by further adding an organosilicon compound such as ms, atmos, votoms and aotms, or an unsaturated hydrocarbon such as hexine and butyne.

In the organocopper compound represented by the formula (1), X ₁ and X ₂ are each hydrogen or have 1 carbon atom.
And X ₁ and X ₂ may be the same or different from each other, or may contain a hydroxyl group. Next, specific examples of the organocopper compound represented by the formula (1) are shown in Table 1.

[0018]

[Table 1]

The organic copper compounds No. 1 to No. 13 in Table 1 were deposited at 180 ° C. by MOCVD, and the deposition rate, specific resistance and surface roughness of the copper thin film at that time were compared and evaluated. . Table 1 shows the results. Specifically, No. 1 (H
With the film formation rate of the organic copper compound (C≡CCH ₂ CH ₂ OH) set to 100, the film formation rates of the other Nos. 2 to 13 were evaluated. In Table 1, A = 91-100, B = 81-90, C = 71-8
0. Similarly, assuming that the specific resistance of the copper thin film when the organic copper compound of No. 1 (HC≡CCH ₂ CH ₂ OH) in Table 1 is formed is 100, the specific resistance of the other copper thin films of Nos. 2 to 13 is The value was evaluated.
In Table 1, A = 100-105, B = 106-11
0, C = 111-120. Similarly, No. 1 (H
The surface roughness of the other copper thin films of Nos. 2 to 13 was evaluated with the surface roughness of the copper thin film when the organic copper compound (C≡CCH ₂ CH ₂ OH) was formed as 100. In Table 1, A = 98-10
1, B = 101-106 and C = 107-110.

Preferred organic copper compounds represented by the formula (2) are those wherein X ₃ , X ₄ , X ₅ and X ₆ are hydrogen, an alkyl group having 2 to 3 carbon atoms, or a hydroxyl group. Including. Next, Table 2 shows specific examples of the organocopper compound represented by the formula (2).

[0021]

[Table 2]

The organic copper compounds No. 14 to No. 15 in Table 2 were formed at 180 ° C. by MOCVD, and the film forming speed, specific resistance and surface roughness of the copper thin film were comparatively evaluated. . Table 2 shows the results. The evaluation method in Table 2 is the same as the evaluation method in Table 1.

The organocopper compound described in any one of claims 1 to 4 is characterized in that 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hfac) and an alkynol group or an alkenol group. Due to the co-operation with the compound having, the chemical stability of the copper compound itself is improved, it is difficult to decompose in the storage state before film formation, the life is prolonged, and the volatility is high, and it is efficiently decomposed on the substrate and high The film formation rate is obtained and the adhesion to the underlying film is excellent, so that it is useful as a mixed solution for MOCVD. When another organic copper compound containing monovalent copper or an unsaturated hydrocarbon compound is mixed and dissolved in the organic copper compound according to any one of claims 1 to 4, nucleation is promoted on the substrate, and the deposition rate is increased. The effect of increasing is seen. Examples of the organic copper compound containing monovalent copper include copper (I) atms.hfac and copper (I) tmvs described above.
Hfac or copper (I) tmovs · hfac. 3-hexyne, 2
-Butyne is preferred.

The organic copper compound according to any one of claims 1 to 4 (hereinafter referred to as compound (a)) and another organic copper compound containing monovalent copper (hereinafter referred to as compound (b)) or Unsaturated hydrocarbon compound (hereinafter, referred to as compound (c))
Is preferably 0.01 to 20% by weight, more preferably 0.1 to 2% by weight, based on 100% by weight of the compound (a). preferable.
If the dissolved amount of the compound (b) or (c) is less than the lower limit, the compound
The effect of adding (b) or (c) does not appear, and the growth rate of the copper thin film does not improve. When the amount of the compound (b) or (c) dissolved exceeds the above upper limit, the impurity concentration in the copper thin film increases, the quality of the thin film tends to deteriorate, and the growth rate of the copper thin film does not increase so much.

The copper thin films prepared using the organic copper compounds No. 1 to No. 15 shown in Tables 1 and 2 have the characteristics of being firmly adhered to the underlying film and having high purity. This copper thin film is formed by a MOCVD method on a TiN film or a TaN film formed by, for example, a sputtering method or a MOCVD method on a SiO ₂ film on a silicon substrate surface. In addition,
The type of the substrate of the present invention is not particularly limited.

[0026]

Next, embodiments of the present invention will be described. <Example 1> No. 1 in Table 1 in relation to the above-mentioned equation (1)
Was prepared as a raw material liquid for forming a copper thin film. This organic copper compound was synthesized by the following method. First, 150 ml of dry methylene chloride sufficiently deaerated with nitrogen was poured into 13.0 g of copper (I) oxide to form a suspension. The suspension is stirred vigorously with 3-butyn-1-ol 1
Add 0.52 g to the suspension and add 1,1,1,5
5,5-hexafluoro-2,4-pentanedione5.
38 g of this suspension was added dropwise to the suspension by a dropping funnel. After stirring this liquid for 4 hours, it was filtered under a nitrogen stream,
The filtrate was distilled off at a temperature of 35 ° C. under reduced pressure to obtain a dark green liquid. This liquid was purified by column chromatography, and a light yellow liquid organic copper compound, copper (I) (3-butyn-1-ol) (1,1,1,5,5,5-hexafluoro-2) was obtained. , 4-pentanedionate) (copper (I) 3-butyn-
5.00 g of (1-ol · hfac) was obtained. The obtained organic copper compound was identified by NMR and elemental analysis.

As a result of the NMR analysis, 1H-NMR (C
DCL3), δ1.2 (s, 1H), 4.3 (m,
2H), 4.5 (m, 2H), 3.52 (br, 1
H), 5.2 (s, 1H), and as a result of elemental analysis, Cu was 19.46% (theoretical value: 19.47%) and O4.
It was 64% (theory 4.65%).

The copper (I) 3-butyn-1-ol thus synthesized
・ The raw material liquid for forming a copper thin film composed of hfac is sealed in a container for 3 months, stored, and then taken out from the container and used.
A copper thin film was formed by the VD method. As the substrate, a silicon substrate having a TiN film (thickness: 50 nm) formed by a sputtering method on a SiO ₂ film (thickness: 5000 °) on the substrate surface was used, and the substrate temperature was set to 150 ° C., 160 ° C., 170 ° C.
The temperature was changed to seven stages of 180 ° C, 190 ° C, 200 ° C, and 210 ° C. The vaporization temperature was set at 70 ° C., and the pressure was set at 2 torr. Ar gas was used as a carrier gas, and the flow rate was 100 ccm. The raw material liquid for copper thin film formation is 0.2
cc / min for 5 minutes and the film thickness
It was measured from the EM image. Table 3 shows the maximum film thickness in the above-mentioned time in terms of unit time. The specific resistance of the film was measured by a four-probe type specific resistance measuring device, and the surface roughness of the film was measured by an electron beam surface roughness analyzer (ERA-8000, manufactured by Elionix). Surface roughness refers to the difference between the top and bottom of the surface. Table 3 shows the results.

Example 2 An organic copper compound shown in No. 2 in Table 1 in relation to the above-mentioned formula (1) was prepared as a raw material liquid for forming a copper thin film. This organic copper compound was synthesized by the following method. In the same manner as in Example 1, 150 ml of dry methylene chloride sufficiently deaerated with nitrogen was poured into 13.0 g of copper (I) oxide to form a suspension. The suspension is stirred vigorously for 2 hours.
10.38 g of -methyl-3-butyn-2-ol are added to the suspension, and 5.22 g of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione are further added to the suspension. The solution was dropped by a dropping funnel one by one. After stirring this liquid for 4 hours, it was filtered under a nitrogen stream, and the filtrate was distilled off at 35 ° C. under reduced pressure to obtain a dark green liquid. This liquid was purified by column chromatography, and a light yellow liquid organic copper compound, copper (I) (2-methyl-3-butyne-
2-ol) (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate) (copper (I) 2-methyl-3-but
(yn-2-ol.hfac) 5.01 g was obtained. The obtained organic copper compound was identified by NMR and elemental analysis.

As a result of the NMR analysis, 1H-NMR (C
In DCL3), δ 0.15 (s, 3H), 0.25
(S, 1H), 3.52 (br, 1H), 5.48
(S, 1H), and as a result of elemental analysis, Cu18.
It was 72% (theoretical value 18.71%) and O 4.45% (theoretical value 4.46%).

Copper (I) 2-methyl-3-bu thus synthesized
A copper thin film forming raw material solution composed of tyn-2-ol · hfac was sealed in a container for 3 months, stored, taken out of the container, and used to form a copper thin film by MOCVD under the same conditions as in Example 1. . The film formation rate (film thickness), specific resistance, and surface roughness were also measured in the same manner as in Example 1. Table 3 shows the results.

<Examples 3 to 13> Compounds No. 3 to No. 13 in Table 1 were synthesized in the same manner as in Example 1 except that the raw materials were changed, and the substrate temperature was set to only 180 ° C. Under the same conditions as in Example 1, a copper thin film was formed by MOCVD.
The deposition rate (film thickness), specific resistance, and surface roughness were also measured in the same manner as in Example 1. These results are shown in the column of evaluation of the film formation test in Table 1.

COMPARATIVE EXAMPLE 1 A copper thin film was formed by MOCVD under the same conditions as in Example 1 using a copper thin film forming raw material liquid composed of copper (I) atms.hfac. Deposition rate
(Film thickness), specific resistance, and surface roughness were also measured in the same manner as in Example 1. Table 3 shows the results.

<Comparative Example 2> A copper thin film was formed by MOCVD under the same conditions as in Example 1 using a copper thin film forming raw material liquid composed of tmvs · hfac. Deposition rate
(Film thickness), specific resistance, and surface roughness were also measured in the same manner as in Example 1. Table 3 shows the results.

<Comparative Example 3> Copper (I) tmovs · hfac
A copper thin film was formed by the MOCVD method under the same conditions as in Example 1 using the copper thin film forming raw material liquid composed of Deposition rate
(Film thickness), specific resistance, and surface roughness were also measured in the same manner as in Example 1. Table 3 shows the results.

<Examples 14 to 15> Compounds Nos. 14 to 15 in Table 2 were synthesized in the same manner as in Example 1 except that the raw materials were changed, and the substrate temperature was set to only 180 ° C. Under the same conditions as in Example 1, a copper thin film was formed by MOCVD. The deposition rate (film thickness), specific resistance, and surface roughness were also measured in the same manner as in Example 1. The results are shown in Table 2 in the column of evaluation of film formation test.

[0037]

[Table 3]

As is clear from Table 3, the film thickness grown in one minute is larger in Examples 1 and 2 than in Comparative Examples 1 to 3 at all substrate temperatures, and especially at a substrate temperature of 170 to
At 210 ° C., Comparative Examples 1-3 are 170-240 nm / min, whereas Examples 1-2 are 318-480 nm.
/ Min, with significant differences. Further, with respect to the specific resistance value of the copper thin film, Comparative Examples 1 to 3 were 2.5 μΩcm, whereas Examples 1 and 2 were 1.9 μΩcm which was close to the theoretical value of 1.6 μΩcm. Further, with respect to the surface roughness of the copper thin film, Comparative Examples 1 to 3 were 1.5 to 3.0 nm, whereas Examples 1 to 2 were 0.2 to 0.3 nm, which was extremely smooth. .

<Examples 16 to 25> Next, Table 1 described above was used.
No.1, No.2, No.4, No.5, No.8, No.10, No.12
And No. 13, a total of 10 shown in No. 14 and No. 15 in Table 2.
Kinds of compound (a), tmvs, tmovs, atm
s, aotms, copper (I) atms · hfac, copper (I) tm
vs. hfac, hexyne copper (I) hfac and bu
8 kinds of compounds (b) consisting of tyn copper (I) hfac and two kinds of unsaturated hydrocarbon compounds (auxiliaries) (c) consisting of hexine and butyne were selected, and based on 100% by weight of compound (a) Compound (b) or (c) was used in an amount of 0.02 to 20% by weight shown in Table 5 below.
And mixed uniformly to prepare 10 kinds of mixed liquids. After storing these raw material liquids in a container tightly closed for three months, each of them is taken out from the container and used.
A copper thin film was formed by MOCVD under the same conditions as in Example 1 except that the substrate temperature was unified to 180 ° C. Compound
Table 4 shows the results as to whether the film formation rate was improved by the raw material liquid obtained by mixing the compound (b) or (c) with (a).
Further, the deposition rate (film thickness), specific resistance value, and surface roughness of the formed copper thin film were measured in the same manner as in Example 1. Table 5 shows the results.
Shown in

[0040]

[Table 4]

[0041]

[Table 5]

As is clear from Table 5, Examples 16 to 2
In No. 5, when the amount of the compound (b) or (c) added is in the range of 0.02 to 20% by weight, the thickness of the film grown in one minute is 402 to 4%.
It was as large as 51 nm. The resistance value of the film is theoretically 1.6.
It was 1.9 to 2.0 μΩcm with respect to μΩcm. Further, the surface roughness was 0.1 to 0.2 nm in Examples 16 to 21, whereas the surface roughness was 0.2 to 0.2 in Examples 22 to 25.
It was 3 nm.

[0043]

As described above, according to the first to fourth aspects of the present invention, this organic copper compound is used alone as a raw material liquid for forming a copper thin film, and a copper thin film is formed from this raw material solution by MOCVD. By doing so, the adhesion to the underlying film is increased, and the deposition rate is further improved. The organic copper compound before film formation is suppressed from being decomposed and has a long life. In addition, the copper thin film formed by the MOCVD method using the organic copper compound of the present invention shows high purity having a resistance value close to the theoretical value similar to that of bulk copper compared to the conventional one, and is robust with the underlying film. It has the features of close contact and low surface roughness. This copper thin film is extremely effective in filling deep contact holes for copper multilayer wiring.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4H048 AA01 AB91 VA56 VB10 4K030 AA11 BA01 CA04 CA12 FA10 4M104 AA01 BB04 BB30 CC01 DD37 DD43 DD45 EE15 HH09 HH16

Claims (6)

[Claims] 1. Formula (1) wherein 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and a compound having an alkynol group are coordinated to monovalent copper. Organic copper compounds. Embedded image Provided that X ₁ and X ₂ are each hydrogen, an alkyl group or a silyl group having 1 to 7 carbon atoms, or a hydroxyl group, and X ₁ and X ₂ may be the same or different from each other . 2. The compound having an alkynol group is 3-
Butyn-1-ol (HC @ CCH_TwoCH_TwoOH), 2-
Methyl-3-butyn-2-ol (HC≡CC (CH_Three)_Two
OH), 2-butyne-1,4-diol (HOCH)_TwoC
≡CCH_TwoOH), 2-butyn-1-ol (CH_ThreeC≡
CCH_TwoOH), 2,5-dimethyl-3-hexyne-
2,5-diol ((CH_Three)_TwoC (OH) C≡CC (OH)
(CH_Three)_Two), 3-hexyn-2-ol (CH_ThreeCH_TwoC
≡CCH (OH) CH_Three), 5-hexyn-1-ol
(HC≡C (CH_Two)_ThreeCH_TwoOH), 3-hexyne-1-
All (CH_ThreeCH_TwoC @ CCH_TwoCH_TwoOH), 2-hex
Syn-1-ol (CH_Three(CH_Two) _TwoC @ CCH_TwoOH),
1-hexyn-3-ol (CH_Three(CH_Two)_TwoCH (OH)
C≡CH), 4-methyl-1-pentyn-3-ol
((CH_Three)_TwoCHCH (OH) C≡CH), 3-methyl-1
-Pentin-3-ol (CH_ThreeCH_TwoC (OH) (CH_Three)
C≡CH) or 4-trimethylsilyl-3-butyne-2
-All ((CH_Three)_ThreeSiC≡CCH (OH) CH_ThreeNo)
The organocopper compound according to claim 1, which is any one of the following. 3. Formula (2) wherein 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and a compound having an alkenol group are coordinated to monovalent copper. Organic copper compounds. Embedded image Provided that X ₃ , X ₄ , X ₅ , and X ₆ are hydrogen, an alkyl group having 2 to 3 carbon atoms, or a hydroxyl group;
X ₃ , X ₄ , X ₅ , and X ₆ may be the same or different. 4. The compound having an alkenol group is ci
s-3-hexen-1-ol or trans-3-hexen-1-ol (CH ₃ CH ₂ CH ＝ CH (CH ₂ ) ₂ O
H) or 4-penten-1-ol (H ₂ C = CH (CH
_{2) 3} OH) a is 3. organocopper compound according. 5. An organocopper compound according to claim 1, wherein said compound comprises trimethylvinylsilane, trimethoxyvinylsilane, allyltrimethylsilane, allyltrimethoxysilane, vinyloxytrimethylsilane, allyloxytrimethylsilane, 3-hexyne, 2-hexyne, -A mixed solution obtained by mixing butyne and one or more compounds selected from the group consisting of hexafluoroacetylacetonate copper (I) complexes to which these are coordinated. 6. A copper thin film produced by an organometallic chemical vapor deposition method using the organic copper compound according to claim 1 or the mixed solution according to claim 5.