JP2002151609A - Nonvolatile memory and thin film transistor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve performance by increasing durability and reliability of an oxide film under a floating gate electrode, in a nonvolatile memory having the floating gate. SOLUTION: In this nonvolatile memory and a method for manufacturing the memory, a channel region 4 is arranged between a source impurity diffusion region 10 of a second conductivity type and a drain impurity diffusion region 11. The region 10 and the region 11 are formed on a surface layer of a main surface of a semiconductor substrate 1 of a first conductivity type, at a constant interval. At least a part of either surface of the region 10 and the region 11 is formed on a surface having crystal face orientation different from that of the main surface. The channel region 4 has a slant part constituted of a surface which is adjacent to a drain bonding region and has crystal face orientation different from that of the main surface of the semiconductor substrate. The region 10 is arranged at a part relatively higher than the region 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a nonvolatile memory and a method for manufacturing the same. More specifically, the present invention relates to a nonvolatile memory having a floating gate electrode which can be electrically written and erased, and a method for manufacturing the same. Further, the present invention relates to a nonvolatile memory having an ultrafine floating gate electrode and a method for manufacturing the same.

[0002]

2. Description of the Related Art Various types of electrically rewritable and erasable nonvolatile semiconductor memory devices and devices for realizing the same have been proposed. Among them, as one of the devices that have recently attracted the most attention, a floating gate electrode is provided in the gate insulating film below the control gate electrode, and a high voltage is applied between the source impurity diffusion region and the drain impurity diffusion region. In addition, there is a device using so-called hot electron injection, in which a high voltage is applied to the control gate electrode so that generated hot carriers are attracted by the electric field of the control gate electrode and injected into the floating gate electrode. For example, one of the devices having a typical structure has recently attracted particular attention.
Non-volatile memories such as those described in JP-A-963,825 and JP-A-61-127179 are known. Representative structures of this nonvolatile memory are described in FIGS.

FIGS. 34 to 36 show non-volatile memories.
FIG. 3 is a sectional structural view of a single memory cell called a self-aligned type having the simplest structure. At a practical level,
Although the structure becomes more complicated, the drawing will be described here as an example for simplicity. In the figure, 101
Is a P-type semiconductor substrate, 102 is a second gate insulating film, 103
, A first gate insulating film; 104, a first polysilicon layer (floating gate electrode); 105, a third gate insulating film;
06 is a second polysilicon layer (control gate electrode), 10
7 is a source region (N + type impurity diffusion region), 108 is a drain region (N + type impurity diffusion region), and 109 is an element isolation oxide film (LOCOS).

That is, this structure is called a self-aligned type because the floating gate electrode 104 and the control gate electrode 10
6 are formed in a self-aligned manner in the channel length direction. The source region 107 has a lightly doped diff (LDD) in order to improve the breakdown voltage during the erase operation.
) or DDD (double doped diffusion) structure (LDD type in FIG. 35, FIG. 36).
Shows the DDD type).

[0005] The operation principle and characteristics of this nonvolatile memory will be briefly described. That is, writing is performed in the drain region 108.
And a high voltage is applied to the control gate electrode 106, and carriers generated by avalanche breakdown are attracted by the control gate electrode 106 in a region near the drain junction in the channel,
This is performed by accumulating in the floating gate electrode 104.
The erasing is performed by applying a high voltage to the source region with the control gate electrode 106 grounded, and discharging the accumulated charges in the floating gate electrode 104 using Fowler-Nordheim (FN) tunnel injection. . At this time, charge is released through the first gate insulating film 103 which is thinner than the second gate insulating film 102, so that Fowler-Nordheim tunneling is likely to occur. Also,
By increasing the thickness of the second gate insulating film 102,
Erroneous erasure due to a read disturb mode from the drain side during reading is prevented.

Next, a method of manufacturing the above-described device will be described. First, a buffer oxide film is grown on the P-type silicon substrate 101 by 1000 °. Next, a silicon nitride film serving as an oxidation preventing film is formed on the buffer oxide film.
Deposit 000Å. Next, on this silicon nitride film,
A photoresist pattern having an opening only in a region where an element isolation oxide film for isolating an element region in an island shape is formed. By selectively removing the silicon nitride film using this pattern as a mask, a silicon nitride film pattern in which an element isolation oxide film forming portion is opened is formed. Next, after removing the resist pattern, using the silicon nitride film pattern as a mask, boron is implanted for forming a channel stopper at an energy of 40 KeV and a dose of 5 × 10 5.
Ion implantation is performed at 13 ions / cm2 to form a field dope layer. Next, wet oxidation is performed at 1000 ° C.
An element isolation oxide film 109 is formed by growing a silicon oxide film on the exposed surface of the P-type silicon substrate. At this time, the boron atoms of the field dope layer are activated and redistributed, so that an inversion prevention layer is formed below the element isolation oxide film 109.

Next, dry etching is performed to remove the silicon nitride film pattern. Further, the buffer oxide film is removed by performing wet etching with ammonium fluoride. Thereafter, thermal oxidation is performed to grow a second gate insulating film 102 to a thickness of 20 nm on the exposed surface of the P-type silicon substrate. Next, a resist is applied to the entire surface, and a photoresist pattern having an opening only in a region to be a gate insulating film on the source region side is formed by a photolithography method. Remove with acid.
After removing the photoresist pattern, thermal oxidation is subsequently performed to form a first gate insulating film 103. At this time, since the second gate insulating film 102 is subjected to additional oxidation, a thick second gate insulating film 102 is formed.

Here, the film thickness of the first gate insulating film 103 is set to 10 in the same manner as the gate insulating film of a normal nonvolatile memory.
The thickness is controlled to about nm. Second gate insulating film 102
Has a thickness of 25 to 35 nm. Then, a polycrystalline silicon film is formed on the entire surface by a CVD (chemical vapor deposition) method at 1500.
さ せ る Grow. After an n-type impurity, for example, phosphorus is introduced into the polycrystalline silicon film by thermal diffusion or ion implantation, the polycrystalline silicon film is etched using a resist pattern to form a floating gate electrode 104. After removing the resist pattern, the surface of the floating gate electrode 104 is oxidized to form an interlayer insulating film made of a silicon oxide film with a thickness of about 20 to 30 nm. Next, in order to form the control gate electrode 106, a polycrystalline silicon film of about 2500 ° is formed on the entire surface of the substrate by CVD or the like. Phosphorus is added to the polycrystalline silicon film as in the case of the floating gate electrode 104. Subsequently, for example, by CVD, the thickness 15
A silicon oxide film of about 00 ° is formed.

Next, by etching using a mask made of a resist film, the silicon oxide film and the polycrystalline silicon film are continuously patterned to form a control gate electrode 106. At this time, in the channel length direction, the floating gate electrode 104 protruding from below the control gate electrode 106 is etched to realize a self-aligned arrangement. Next, after removing the resist, an oxide film is formed on the entire surface, and As is ion-implanted with a low energy using the control gate electrode 106 and the like and the floating gate electrode 104 as a mask, so that the source region is formed. A low concentration diffusion layer is formed. Next, after an oxide film is vapor-phase grown on the entire surface by the CVD method, the CVD silicon oxide film is etched back by reactive ion etching to form sidewalls on the side surfaces of the control gate electrode 106 and the floating gate electrode 104. Using the control gate electrode 106, the floating gate electrode 104 and its side wheels as masks, As
Implantation energy of 40 KeV and dose of 5 × 10 ¹⁵ ions
/ cm ² ion implantation, thermal acid annealing and source
Drain regions (107, 108) are formed. Thereafter, according to a normal process, an interlayer insulating film is formed, contact holes are formed and metallization is performed, and a passivation film is formed. Thus, a nonvolatile memory having the most basic structure is completed.

As described above, by making the thickness of the gate insulating film below the floating gate thinner on the source side, FN tunneling is likely to occur at the time of erasing. Further, since the oxide film on the drain side is thick, erroneous erasure from the drain side during reading and writing can be prevented.

[0011]

As described above, in the nonvolatile memory, charges are frequently transferred through an extremely thin oxide film located under the floating gate electrode. Is greatly involved in speeding up devices. It is no exaggeration to say that the durability and reliability of the non-volatile memory depend on how this thin oxide film is formed. However, the conventional structure and manufacturing method as described above have the following problems.

That is, in the conventional structure, there is a problem in that carrier injection is unlikely to occur because the thin oxide film located under the floating gate electrode and the charge involved in the injection proceed almost completely in the horizontal direction. Also, during manufacturing,
The step of forming a thin oxide film under the floating gate electrode includes forming a first gate insulating film, applying a photoresist, exposing / patterning the photoresist, and forming a first gate using the photoresist pattern as a mask. The method consists of a plurality of steps such as a step of etching a part of an insulating film, a step of removing a photoresist, and a step of forming a second gate insulating film, and forming a highly accurate and thin oxide film with good reproducibility. Was extremely difficult.
In addition, since there is a step in which the gate insulating film comes into close contact with the organic resist, it has been difficult to prevent contamination. Further, since the first gate insulating film is partially oxidized after being removed, edge stress is easily generated at a silicon interface at a boundary region between the first gate insulating film and the second gate insulating film. Before discussing durability and reliability, such as the oxide film formed on the substrate causing dielectric breakdown, it was extremely difficult to secure the yield even.

In US Pat. Nos. 4,964,080 and 5,049,515, a control gate electrode is close to a channel region (vertical region) via an insulating film to form a select gate electrode. A non-volatile memory with a select gate structure is described. However, these non-volatile memories have a problem that higher integration is more difficult than the non-volatile memories in which the control gate electrode and the floating gate electrode are formed in a self-aligned manner as described above.

Therefore, the inventor of the present invention has found a semiconductor device capable of improving the durability and reliability of an oxide film below a floating gate electrode and improving the performance in an EEPROM having a floating gate electrode, and a method of manufacturing the same. This has led to the present invention.

[0015]

Thus, according to the present invention, a semiconductor substrate of the first conductivity type and a second conductivity type semiconductor substrate formed at regular intervals on the surface layer of the main surface of the semiconductor substrate are provided. A source impurity diffusion region and a drain impurity diffusion region; a channel region provided between the source impurity diffusion region and the drain impurity diffusion region; a gate insulating film provided on the channel region; and a gate insulating film provided on the gate insulating film. A floating gate electrode, and a control gate electrode provided via an interlayer insulating film so as to be at least partially laminated thereon, wherein the channel region is in contact with the drain impurity diffusion region and the semiconductor substrate A slope having a surface having a crystal plane orientation different from that of the surface, the source impurity diffusion region is provided relatively above the drain impurity diffusion region, Nonvolatile memory whose serial drain impurity diffusion regions and wherein the extending the inclined portion is provided.

A first insulating film formed on the first or second conductive type semiconductor substrate; a first conductive type semiconductor thin film formed on the first insulating film; A channel region formed between the source impurity diffusion region and the drain impurity diffusion region of the second conductivity type formed at regular intervals in the surface layer of the main surface of the semiconductor device, and a gate insulating film provided on the channel region A floating gate electrode provided on the gate insulating film, and a control gate electrode provided on the gate insulating film via an interlayer insulating film so as to be at least partially laminated thereon, and the channel region has an inclined portion. A thin film transistor is also provided, wherein the source impurity diffusion region is provided relatively above the drain impurity diffusion region, and the drain impurity diffusion region extends to the inclined portion.

Furthermore, a step of forming an element isolation oxide film in a predetermined region on one main surface of the semiconductor substrate of the first conductivity type, and a step of forming a low conductivity type second conductivity type in at least a region where a Fowler-Nordheim tunnel occurs in the active region. Forming a high-concentration impurity diffusion region, forming a gate insulating film on the active region in which the low-concentration impurity diffusion region is formed, and controlling the floating gate electrode by controlling the low-concentration impurity diffusion region and the floating gate electrode. A step of forming an interlayer insulating film on the floating gate electrode so as to overlap with an area determined according to a capacitance between the floating gate electrode, and Forming a patterned control gate electrode; and implanting a second conductivity type impurity into the active region at a high concentration using the control gate electrode and the floating gate electrode as a mask. Method of fabricating a non-volatile memory comprising a step of forming a region and the drain region is also provided.

A step of forming an element isolation oxide film in a predetermined region on one principal surface of the semiconductor substrate of the first conductivity type; and forming a predetermined region of the element isolation oxide film in an oxide film formation step when forming the element isolation oxide film. A step of forming an opening in the element isolation oxide film by etching using the blocking film and the photoresist as a mask, a step of removing the oxide film formation preventing film and the photoresist, and a step of removing the element isolation oxide film in the opening. Forming a second oxide film having a different etching rate, etching a thin region of the element isolation oxide film to expose a portion of the semiconductor substrate which becomes an active region, and forming a gate on the exposed region. Forming an insulating film, forming a floating gate electrode on the gate insulating film, forming a flattening film on the entire surface so that the surface is flat on at least the active region; and forming the flattening film. Etching under the condition that the planarization film remains on the floating gate electrode on the inclined region and the surface of the floating gate electrode other than on the inclined region is exposed, and the planarization remaining on the floating gate electrode on the inclined region Etching the floating gate electrode using the film as a mask.

Furthermore, a step of covering at least a part of the first electrode with an insulating film and forming a first interlayer film other than a region covered with the insulating film, removing the insulating film, and removing the insulating film. Forming a second interlayer film thinner than the first interlayer film in the region where the first interlayer film is formed, and forming at least all of the second interlayer film on the first electrode via the first interlayer film and the second interlayer film. Forming a second electrode so as to cover the non-volatile memory.

The nonvolatile memory of the present invention can be used as a flash memory. As the semiconductor substrate used in the present invention, a substrate usually used for a nonvolatile memory can be used. Such substrates include silicon, G
aAs and the like. Further, the substrate may be p-type or n-type.
A substrate previously containing impurities of the conductivity type can be used. Examples of such impurities include p-type impurities such as boron and n-type impurities such as P and As. In addition,
When the first conductivity type is p-type, the second conductivity type is n-type;
If the first conductivity type is n-type, the second conductivity type is p-type.
Further, it is preferable to use a substrate from which harmful impurities and defects have been removed by gettering in advance. Further, the substrate is provided with an inclined portion, and the height of the inclined portion is 100 to 50.
00 °, and the width is preferably 200 to 8000 °. The height is adjusted so that the resolution of exposure does not decrease. The smaller the height, the better.

A source impurity diffusion region (hereinafter, referred to as a source region) and a drain impurity diffusion region (hereinafter, referred to as a drain region) are provided on a surface layer of the substrate. It is a feature of the present invention that it is provided above. Further, a channel region is provided between the source region and the drain region of the second conductivity type. By arranging the drain region up to the inclined portion, a short channel device can be formed. An impurity having a conductivity type opposite to that of the substrate is implanted into the source region and the drain region, and the impurity concentration is preferably 10 ¹⁹ to 10 ²¹ ions / cm ³ . Further, a region having the same conductivity type as that of the bulk and having a higher substrate concentration than the bulk can be provided near the drain region. By providing this region, the generation efficiency of hot electrons is improved, and the writing speed can be increased. Further, the channel region is formed to have a sufficient depth which is not affected by a profile when another impurity region is formed. As such a depth, Rp 0.1 to 0.4 μm is preferable.

Further, on this substrate, a floating gate electrode and a control gate electrode are laminated in this order so as to straddle the source region and the drain region. Further, a gate insulating film is provided between the substrate and the floating gate electrode, and between the floating gate electrode and the control gate electrode. Here, as a material used for each gate electrode, a known material can be used, for example, polysilicon or the like. Further, the impurity concentration and the conductivity type may be changed over the entire surface or locally of the floating gate electrode by diffusion or ion implantation. Furthermore,
The thickness of each of the floating gate electrode and the control gate electrode is preferably 3000 to 5000 °.

Further, as a material used for the gate insulating film, known materials can be used, and examples thereof include a film made of silicon oxide, silicon nitride, tantalum, and a dielectric material. Also, an oxide film-nitride film-oxide film (ONO
Structure). Further, the gate insulating film is formed to be thinner by an interlayer film between the control gate electrode and the floating gate electrode, and is selected so as not to substantially relate to the trap. That is, after dry O2 oxidation, argon (A
r) and ammonia (NH3) in an atmosphere
Nitriding is performed at a high temperature of 000 ° C. or more for about 10 to 30 minutes. Thus, moisture and OH radicals in the gate insulating film can be reduced, and traps can be reduced. Here, the insulating film between the substrate and the floating gate electrode is preferably thinner on the source region side than on the drain region side. By making the source region side thinner than the drain region side, Fowler-Nordheim tunneling can easily occur on the source region side and the withstand voltage on the drain region side can be improved. Hereinafter, the thin gate insulating film on the source region side is referred to as a first gate insulating film, and the thick gate insulating film on the drain side is referred to as a second gate insulating film. First
The thicknesses of the gate insulating film and the second gate insulating film are preferably 70 to 100 ° and 100 to 200 °, respectively.

The thickness of the gate insulating film between the floating gate electrode and the control gate electrode (hereinafter, this insulating film is referred to as a third gate insulating film) is preferably 150 to 300 °. This third gate insulating film is used to improve the pull-in efficiency.
It is also possible to make the drain region side thinner and the source region side thicker. An SiN film may be used as one layer of the insulating film in order to reduce charge leakage. Thereby, erroneous erasure such as internal photo-emission can be prevented.

The non-volatile memory of the present invention is constituted by the constituent elements described above. Here, the source region has an LDD structure and a D
DD structure, PLDD (Profiled Lightly Doped Diffusi
on) structure or DI (Double Implanted) -LDD structure. By forming the above structure on the source region side, the width of the depletion layer can be increased and the withstand voltage can be improved. Further, the reason why the above structure is not formed on the drain region side is to increase the electric field strength by steepening the concentration gradient of the junction in the drain region.

In the case of the LDD structure, the second
A structure in which a conductive type low-concentration region is further formed has an impurity concentration of 10 ¹⁷ to 10 10.
¹⁸ ions / cm ³ is preferred. Furthermore, the low-concentration region may be formed so as to cover part or all of the end on the drain region side, and it is also possible to partially cover the lower part of the source region (FIGS. 2B to 2C). c)).

In the case of the DDD structure, a low-concentration region is formed so as to cover the source region, and the impurity concentration of the low-concentration region is 10 ¹⁸ to 10 ¹⁹ ions.
/ cm ³ is preferable (see FIG. 2A). The DDD structure has an advantage that punch-through is less likely to occur than the LDD structure. Furthermore, if the PLDD structure, impurity regions so as to cover the LDD low concentration region and the source region of the LDD structure but is a structure that is further formed, the impurity concentration is 10 ¹⁷ to 1 of the PLDD low concentration region
0 ¹⁹ ions / cm ³ is preferable (see FIG. 2D).

In the case of the DI-LDD structure, an impurity region of the first conductivity type is formed on the channel region side, and a low concentration region of the second conductivity type is formed on the surface layer of the impurity region on the source region side. (See FIG. 2E). The impurity concentration of the first conductivity type impurity region is 10 ¹⁶ to
Preferably 10 ¹⁸ ions / cm ^3, the impurity concentration of the low concentration region of the second conductivity type is preferably ^{10 18 ~10 20 ions / cm 3} .

The above structure is preferable because the withstand voltage of the drain region can be made lower than that of the source region, and the withstand voltage at the time of the erase operation can be improved. Further, it is desirable that the damaged region of 1 to 9 × 10 ¹⁴ ions / cm ² of the ion implantation profile for forming the low concentration region and the subsequent source region is dispersed so as not to overlap in each implantation.
For example, in order to prevent the damaged region from overlapping in the silicon immediately below the edge of the blocking film, a gentle sidewall spacer may be extended to the side wall of the blocking film and implanted therethrough. The sidewall spacer can be easily formed by using a two-layer film having different etching rates and anisotropic etching.

In the above description, an example using a two-layer polycrystalline silicon structure has been described. However, the present invention may be applied to an apparatus using a three-layer polycrystalline silicon structure, for example, an apparatus having an erase gate. . Further, instead of the element isolation oxide film, element isolation can be performed using a gate electrode. In addition, a buried diffusion layer (bit line, etc.) under the element isolation oxide film
Can also be provided.

Hereinafter, a method for manufacturing a nonvolatile memory according to the present invention will be described. First, a buffer oxide film having a thickness of 1000 ° or more is formed on a semiconductor substrate having a desired conductivity type by a thermal oxidation method or the like. This buffer oxide film is provided to obtain a bird's beak length with good reproducibility, to suppress the occurrence of dislocations and slips in the silicon substrate in this region, and to relieve the stress of the oxidation prevention film formed later. . The buffer oxide film quality and film thickness depend on the shape of the inclined region and the crystal state inside the silicon substrate in the hot electron generation region, and the film quality and film thickness of the buffer oxide film match the total process and device operation. In view of the above, conditions are empirically set and determined. On the buffer oxide film, for example, a photoresist or the like is applied to form a pattern having an opening only in a region where an element is to be formed.

Next, impurities are implanted into the semiconductor substrate to form a channel dope layer. Examples of the impurity material to be implanted include boron and the like for a p-type impurity and phosphorus and the like for an n-type impurity. The implantation conditions must be such that the implantation is performed at a sufficient depth so as not to be affected by the tail of the profile of the subsequent ion implantation.
0 ¹³ ions / cm ² and an implantation energy of 40 to 200 KeV are preferable. This injection amount has a hot electron injection efficiency,
It is extremely important because it depends on this concentration.

Next, the resist is removed, and an oxidation preventing film having a thickness of 700 to 1000 ° is formed by a CVD method or the like.
It is preferable to use a silicon nitride film as the oxidation prevention film. Next, the oxidation preventing film in the portion where the element isolation region is to be formed is selectively removed by etching using a photoresist or the like. The resist and the like are removed, and SOG (spin on gra
ss) _{film, TEOS (Si (OC 2 H} 5) 4) film, PCVD · TEO
S / SOG / PCVD / TEOS film etc., coating method, PC
Lamination is performed by a method such as the VD method, and a sidewall spacer is formed on the side wall of the oxidation prevention film. PCVD ・ TEOS
The film is formed from Si (OC ₂ H ₅ ) ₄ and O ₂ . Next, in order to form a field dope layer, an implantation energy of 100 to
Impurities are implanted at 150 KeV and at a dose of 10 ¹³ to 10 ¹⁴ ions / cm ² . Known impurities can be used as the impurities. In addition, since the implantation of impurities is restricted by the sidewall spacer, a field dope layer can be formed only in a desired region.

Next, an element isolation oxide film is formed at 1000 to 110
It is formed by a method such as thermal oxidation at 0 ° C. (so-called LOCOS method) or CVD method. By the formation of this element isolation oxide film,
The field dope layer is activated and redistributed to become an inversion prevention layer below the element isolation oxide film. The layout is designed so that the main part of the element does not come to the corner edge of the element isolation oxide film.

Next, a part of the element isolation oxide film is removed by anisotropic etching such as RIE using a resist mask. Further, the anisotropic etching is switched to isotropic etching using hydrofluoric acid or the like, and a predetermined amount of the element isolation oxide film below the oxidation prevention film is etched. Next, the entire surface is SOG
Using a method such as coating the film, the film thickness is 4000 to 8000Å.
To be deposited. This film may be subjected to an etch-back process as needed.

Next, the oxidation preventing film is removed by etching using hydrofluoric acid or the like, and the SOx formed on the oxidation preventing film is removed.
Lift off the G film. Thereafter, the oxide film at the end of the buffer oxide film and the element isolation oxide film is removed. Removal methods include
Although a known method can be used, it is not preferable to use an etchant that affects the silicon interface, and dry etching is not appropriate. As a preferable etching method, for example, wet etching using HF can be used.

Since the inclined portion formed by oxidation has a gentler shape than the inclined portion formed by etching or the like, the step coverage is improved, and the floating gate electrode and the like formed later on the upper portion are formed. Stress can be reduced, and the reliability when the element is miniaturized is improved. In addition, oxidation has the advantage that damage to the silicon interface is smaller than that of etching, and a stable device can be manufactured. Further, the length of the bird's beak, which determines the size of the inclined portion, can be easily controlled by controlling the thickness of the buffer oxide film, and the fine dimensions can be easily adjusted.

Next, the resist and the like are removed, and the first and second resists are removed.
A gate insulating film is formed. When an oxide film is used for the insulating film, it can be formed by thermal oxidation. The oxidation method is determined in consideration of the type of the device and the compatibility between processes, and examples thereof include oxidation by dry O ₂ and pyrogenic oxidation. The oxidation is performed at a relatively low temperature of 850 to 950 ° C. Furthermore, it is particularly preferred to carry out the oxidation at about 900 ° C. with dry O ₂ . The reason is that an oxide film made of dry O ₂ (pyrogenic may be used to reduce the trap level) has the highest activation energy and is easy to control, exhibits excellent dielectric breakdown voltage characteristics, and has a threshold voltage. This is because there are many advantages such as no shift and a high trap density in the oxide film. Although the exposed substrate is oxidized by this oxidation, the thickness of the oxide film in the inclined portion where the element isolation oxide film is removed is larger than the thickness of the oxide film in the buffer oxide film portion. Here, the insulating film in the inclined portion is a second gate insulating film, and the oxide film in the buffer oxide film portion is a first gate insulating film. In this manner, oxide films having different thicknesses can be formed in a single oxidation step.

Further, an inert substance such as argon, which promotes thermal oxidation, may be implanted in advance into the region where the first gate insulating film is to be formed, without or in combination with the above implantation. Alternatively, Si may be ion-implanted into a region where the first gate insulating film is to be formed to weaken the bonding force of the Si crystal. This Si ion implantation is also effective in suppressing the diffusion of impurities in the buffer oxide film into Si. After the formation of the insulating film, annealing may be performed in an atmosphere of H ₂ or the like to adjust the impurity concentration in the insulating film. In addition, since oxidation is performed at a relatively low temperature, high interfacial fixed charges are generated in the insulating film, but can be reduced by annealing in an inert atmosphere such as N2 or Ar. Further, if the formation region is sacrificed before forming the first gate insulating film and the second gate insulating film, a better film can be formed.

Next, a floating gate electrode is formed at a desired position by laminating polycrystalline silicon or the like over the entire surface by a CVD method or the like and performing etching. In addition, H
A TO film and a second laminated film formed by thermal oxidation may be used.
Next, after removing the SOG film by a known etching method, impurities are implanted using the floating gate electrode as a mask to form source / drain regions. The implantation conditions are an implantation energy of 30 to 80 KeV and a dose of 10 ¹⁵ to 10 ¹⁶ ions.
/ cm ² is preferable. The amount of n @ + implanted into the floating gate electrode is determined so as to adjust the interface potential barrier between the polycrystalline silicon and the implanted oxide film according to the area of the oxide film for charge injection. The design rules such as the sheet resistance values of the source region and the drain region are matched with the adjustment of the interface potential barrier. In this implantation, since the source region is formed through the gate insulating film, it can be formed shallower than the drain region. Here, a deeper channel region can be provided by implanting Si ions into the inclined portion of the channel region layer via the floating gate electrode.

Next, a third gate insulating film is formed by oxidizing the floating gate electrode or the like. A control gate electrode is formed by stacking polycrystalline silicon or the like on the entire surface and performing etching. Furthermore, an oxide film is formed by oxidizing the entire surface, and then a sidewall spacer is formed on the side wall on the source region side of the control gate electrode using a resist or the like, and the floating gate electrode is isotropically etched. , The overlap between the control gate electrode and the floating gate electrode can be controlled.

Thereafter, a non-volatile memory having a self-aligned structure is formed by laminating an interlayer insulating film, opening a contact hole, performing metallization and forming a passivation film according to a normal process. Can be. PCVD ・ T as interlayer insulating film
EOS / SOG / PCVD / TEOS films can be used.
Further, by hitting the surface of the SOG film with O2 plasma before depositing the PCVD / TEOS film on the SOG film, the adhesion between the SOG film and the PCVD / TEOS film can be improved.

When the LDD structure is formed, the floating and control gate electrodes are etched in a self-aligned manner.
The drain region is masked with a resist or the like, and the impurity is inclined and rotationally implanted (implantation angle of 50 to 70 °),
Can be realized. The implantation conditions at this time are as follows: implantation energy of 40 to 80 KeV and a dose of 10 ¹⁴ to 10 ¹⁶ ions.
/ cm ² is preferable.

When a DDD structure is formed, 31P
This can be realized by implanting 75As + at a high concentration after implanting a low concentration of +. The implantation conditions at this time are: implantation energy 30 to 80 KeV, dose amount 1
It is preferable that the concentration be in the range of 0 ¹⁴ to 10 ¹⁶ ions / cm ² . Furthermore, P
When an LDD structure is formed, it can be realized by rotating implantation in which the implantation angle is changed stepwise and the implantation energy is changed stepwise. The implantation conditions at this time are: implantation energy 20 to 100 KeV, implantation angle 30 to
Preferably, it is 70 ° and the dose is 10 ¹³ to 10 ¹⁶ ions / cm ² . Further, it is preferable that the above implantation conditions are divided so that the peak concentration of the profile is about 10 ¹⁹ to 10 ²¹ ions / cm ³ , and that a sufficient cooling period is provided between the implantations. For example, in the case of As, 80 KeV and 2 ×
10 ¹⁵ ions / cm ² , 40 KeV and 1.5 × 10 ¹⁵ ions / c
The implantation may be performed at m ² , 20 KeV and 7 × 10 ¹⁴ ions / cm ² .

When forming a DI-LDD structure
Uses a floating gate electrode as a mask,
With an implantation energy of 20 to 60 KeV and a dose of 10¹²
-10 ¹⁴ions / cm^TwoInject in the degree. Next, oxidize the entire surface
A film is formed and acid is applied by RIE (Reactive Ion Etching).
Etch back the oxide film, and remove the gate insulating film and floating gate voltage.
Sidewall spacers are formed on both sides of the pole. The
Mask sidewall spacers and floating gate electrode
Arsenic or the like is implanted into the substrate,
eV, dose amount 10¹⁴-10¹⁶ions / cm^TwoInject
You. Thereafter, a thickness of 50 mm is formed by a CVD (chemical vapor deposition) method.
A SiN layer of about 00 ° is formed. Next, on the SiN layer
The SiN layer is flattened by applying a resist.
Further, masking the drain region side from the gate electrode,
Etch N layer and resist at the same etching rate
Until the surface of the gate electrode is exposed.
Etch back the strike. Next, wet the SiN layer
The upper part of the sidewall spacer (3 /
Until about 8) is exposed. Next
Then, while leaving the SiN layer on the semiconductor active region,
Selectively remove only the spacers,
The semiconductor substrate is exposed. Then, the gate electrode and Si
Implanting boron or the like into the exposed portion using the N layer as a mask
Gee 70-100 KeV, dose 10¹²-10¹⁴ions
/cm^TwoDI-LDD structure is formed by implantation
Is done.

Further, in addition to the above method, Japanese Patent Application Laid-Open No. 5-9051
The oblique ion implantation method described in Japanese Patent Application Laid-open No. 9 may be used.
That is, DI- is performed by implanting ions at an implantation angle of 30 to 60 ° and a predetermined implantation energy and dose.
An LDD structure can be formed. In the above description of the manufacturing method of the present invention, a process that makes full use of the dependence of the gate insulating film on the dose of the substrate has been proposed. However, the manufacturing method of the present invention is not limited to this. Needless to say, the same manufacturing method can be used.
However, this would necessitate further cleaning and automation, and very strict process control. For example, since the low concentration impurity diffusion layer 12 on the source region side in the manufacturing method of the present invention is formed by oblique ion implantation, the concentration of the portion overlapping the floating gate electrode is not uniform, and the desired area Very difficult to control. In addition, high energy of ions is irradiated to the side surface of the floating gate electrode and the gate insulating film therebelow, resulting in a decrease in breakdown voltage and a decrease in Fowler-Nordheim /
There is a problem that the erase operation due to the tunnel effect becomes unstable. As a countermeasure, the low concentration impurity diffusion layer 12 may be formed before the gate insulating film is formed.

That is, FIGS. 21 (a) to 21 (c) and FIG.
As shown in (a)-(c) and FIGS. 23 (a)-(c), after exposing the surface of the substrate in FIG. 15, the exposed surface is thermally oxidized to a sacrificial oxide (Also serving as an oxide film before implantation) is formed (see FIG. 21A). Next, a photoresist pattern 14 serving as a mask for forming an LDD region is formed (see FIG. 21B).

Next, the photoresist pattern 14
In order to form a low-concentration impurity diffusion region by using as a mask, ions such as arsenic are implanted (see FIG. 21C).
Further, the photoresist pattern 14 and the sacrificial oxide film 13
Is removed by etching (see FIG. 22A). Next, a gate insulating film is formed (see FIG. 22B), and the floating gate electrode 7 is etched so that the edge on the source region side matches the region where the high-concentration source region is formed (see FIG. 22C). .

Next, the SOG is removed and ion implantation for forming a source region and a drain region is performed (FIG. 2).
3 (a)). Further, a control gate electrode 9 is formed. At this time, the low concentration impurity diffusion layer 12 and the floating gate electrode 7 are formed.
The position of the edge of the control gate electrode 9 on the source region side is determined so as to determine the area of overlap with FIG.
reference).

As a result, the low concentration impurity diffusion layer 12
And the area of the overlapping portion of the floating gate electrode 7 is determined. Here, the overlap can be about 0.2 μm below the floating gate electrode 7 (see FIG. 23C). In the present application, the coupling ratio [C4 / (C4 + C3 + C2 + C1 + C
5)] is, for example, 0.5 to 0.8. After C4 is determined, the capacity of the superimposed portion is determined.

In the present invention, since an offset gate is not used, and in order to form an erasing gate insulating film with high accuracy, a method using a bulk formed with a channel doped layer may be used. Next, an electrical connection state of the nonvolatile memory of the present invention will be described with reference to FIGS. In the figure, V
se is the erase voltage to the source region 10, Vfg is the potential of the floating gate electrode 7, C4 is the parasitic capacitance between the control gate electrode 9 and the floating gate electrode 7, and C3 is the capacitance between the floating gate electrode 7 and the substrate 37. The capacitance C2 is between the floating gate electrode 7 and the substrate 38.
C1 is the capacitance between the floating gate electrode 7 and the drain region 11. Here, the thickness of the first insulating film 5 is d
Assuming that 1, the electric field Ee at the time of erasing in the first insulating film 5 is expressed by the following equation (I). Ee = Vse (C5 + C4 + C3 + C2) / d1 (C5 + C4 + C3 + C2 + C1) (I) To perform erasing using the tunnel effect, it is necessary to control d2 to an appropriate thickness. From this, if the area between the first insulating film 5 and the source region 10 cannot be controlled to be small, C1 becomes extremely large and Ee becomes small. Therefore, in the present invention, in order to obtain a desired Ee,
It is possible to provide a simple nonvolatile memory manufacturing method capable of optimally selecting the above-mentioned capacity and securing a certain yield.

On the other hand, assuming that the thickness of the second insulating film 6 at the pinch-off point is d2 and the write voltage to the control gate electrode 9 is Vgw, the voltage of the floating gate electrode 7 contributing to hot carrier attraction in the second insulating film. Vfg is represented by the following formula (II).

Vfg = Vgw (C4 / (C5 + C4 + C3 + C2 + C1)) (II) In the present invention, the characteristics such as the area, film thickness, and film quality of each of the regions forming C1 to C4 can be appropriately set, and the manufacturing Variation can be eliminated. Therefore, even if the memory becomes finer, the writing and erasing characteristics can be maintained.

Further, since C2 is formed by the substrate 38, the second insulating film 6, and the floating gate electrode 7, by increasing the capacity of C2 in the above formula (I),
Can be reduced. Furthermore, the present inventor has found that a nonvolatile memory having a slope type channel has the following problems.

That is, since the floating gate electrode is formed by photolithography, an alignment margin must be expected. Therefore, in the nonvolatile memory having the inclined channel, it is difficult to position the floating gate electrode with respect to the inclined portion, and there is a problem that the area of the memory element cannot be reduced. Further, in the nonvolatile memory having the above-described inclined channel, since the control gate electrode is formed on the inclined floating gate electrode, the area of the region where the floating gate electrode and the control gate electrode are stacked is highly reproducible. It was difficult to stack control gate electrodes while adjusting.

This means that it is difficult to control the coupling capacitance between the control gate electrode and the floating gate electrode and the capacitance between the source region and the floating gate electrode to desired values. . Therefore, the inventor of the present invention has also found a structure of a tilt channel nonvolatile memory capable of reducing the size of a memory cell and a method of manufacturing the same.

Further, a non-volatile memory has been found which can keep the coupling capacitance ratio between the control gate electrode and the floating gate electrode constant even with the floating gate electrode formed in the channel region having the inclined portion. The above-described nonvolatile memory and the method of manufacturing the same will be described above. Manufacturing can be performed in the same manner as the above-described manufacturing method up to the step of determining the position of the end of the floating gate electrode on the drain region side.

However, the side wall spacer used for forming the field dope layer may or may not be formed. That is, even if the field dope layer is formed in the active region, in the case of a nonvolatile memory having a fine floating gate electrode as in the present invention, it is unlikely that the field dope layer approaches the vicinity of the channel region. Therefore, even if the sidewall spacer is not formed, the concentration of the impurity ions derived from the field dope layer existing in the active region is low, and the concentration of the impurity ions in the later formation of the source region and the drain region is completely countered by the high concentration impurity ions. Doped. Therefore, the formation can be omitted.

The conductivity type of the impurity ions for forming the field dope layer is opposite to that of the impurity ions for forming the drain region. Therefore, if the depth of the field dope layer and the junction depth of the drain region are matched, the spread of the depletion layer in the drain region can be suppressed.
As a result, the electric field can be concentrated in the channel region, so that the generation of hot carriers at the pinch-off point can be promoted.

After determining the position of the end of the floating gate electrode on the drain region side, a silicon nitride film or the like is deposited by the PCDV method to a thickness of 4000 to 8000 ° on the entire surface. By forming a thin underlying oxide film on the substrate surface before depositing the silicon nitride film, the stress of the silicon nitride film can be reduced. However, when the base oxide film is thick, the thickness of the gate insulating film is not uniform at the end on the drain region side, which is not preferable. Next, the silicon nitride film is removed by masking the element isolation region and the opening formed in the element isolation region with a photoresist or the like.

Next, after removing the mask, impurity ions are implanted into the substrate below the edge of the element isolation oxide film. By this implantation, a concentration gradient of impurity ions can be formed in the inclined channel region. Here, the concentration gradient is a gradient in which the impurity ion concentration increases from the source region toward the pinch-off point. In order to obtain a concentration gradient, it is preferable to use impurity ions (for example, boron ions) having a small diffusion coefficient.

Next, first and second gate insulating films are formed. The formation method can be performed in the same manner as the above-described manufacturing method. Next, polycrystalline silicon or the like is stacked on the entire surface by a CVD method or the like. Subsequently, an SOG film is applied so as to expose the polycrystalline silicon existing in the step formed by the silicon nitride film. After removing the exposed polycrystalline silicon, a film having good step coverage such as a CVD silicon oxide film is etched back one or more times to form a flat layer.

Next, anisotropic etching is performed with the end point at which the polycrystalline silicon layer is exposed. Here, a film with good step coverage remains on the polycrystalline silicon. Using this film as a mask, polycrystalline silicon is anisotropically reactive etched to form a floating gate electrode.
It is preferable to use an etchant which selectively etches polycrystalline silicon and silicon oxide as an etchant used for this etching. Examples of the etchant include hydrogen bromide.

Next, impurity ions are implanted using the floating gate electrode and the silicon nitride film formed by the PCVD method as a mask. The implantation conditions can be the same as the conditions for forming the LDD structure in the manufacturing method. The implantation for the LDD structure shifts in the channel direction due to a later oxidation step on the floating gate electrode. Therefore, it is desirable to implant impurity ions having a high diffusion coefficient in anticipation of the shift amount. The area of the FN region is determined by the correlation between the amount of diffusion of impurity ions in the lateral (channel) direction of the LDD structure after the completion of all the steps and the amount of shift in the channel direction due to oxidation of the side wall of the floating gate electrode. Is done.

Next, after removing the silicon nitride film by a PCVD method by a known method, the entire surface of the substrate is oxidized to form an interlayer insulating film. Thereafter, using the floating gate electrode as a mask, impurity ions are implanted to form a source region and a drain region. The implantation conditions can be the same as those in the above-described manufacturing method. In addition, US Pat.
By using the multi-stage implantation method described in Japanese Patent No. 8,858, a source region and a drain region having more stable characteristics can be formed.

Next, a nitride film is formed on the entire surface, isotropically and anisotropically etched, and a nitride film sidewall spacer for preventing oxidation is formed on the side wall of the floating gate electrode. Subsequently, the entire surface of the substrate is oxidized to a thickness of 1000 to 30.
It is possible to form a floating gate electrode having an interlayer insulating film having a thickness of about 100 °. By adjusting the thickness of the interlayer insulating film, the capacitive coupling between the floating gate electrode and the control gate electrode can be controlled such that the coupling on the sidewall of the floating gate electrode on the drain region side becomes dominant. The conditions of the thermal oxidation at this time determine the shift amount of the side wall of the floating gate electrode on the source region side in the channel direction and also affect the diffusion amount of the impurity in the LDD region on the source region side in the lateral direction. I do. Since the step coverage of the word line is improved by the amount of oxidation, it is not better to form the interlayer insulating film thicker, but the floating gate electrode also reduces the channel width by that much, and the device design rule Care must be taken in setting the process conditions in the relationship.

Incidentally, the thick interlayer insulating film on the floating gate electrode may be formed by oxidizing the entire surface of the substrate before removing the silicon nitride film by the PCVD method in order to shorten the process. Since the interlayer insulating film formed by this method has a thick insulating film on the side wall of the floating gate electrode on the source region side, a sufficient offset between the source region and the floating gate electrode can be ensured. As a result, the withstand voltage of the nonvolatile memory can be improved.

Next, the nitride film sidewall spacer is removed, and the thin oxide film on the side wall of the floating gate electrode is removed.
Thereafter, an interlayer insulating film having a desired thickness is formed by thermal oxidation or the like. If the side wall of the floating gate electrode is sacrificed in this step, the reliability of the interlayer insulating film can be improved. Thereafter, polycrystalline silicon is deposited on the entire surface, and a control gate electrode having a desired shape can be formed through a known process.

The control gate electrode is preferably formed as follows, since the step coverage of the control gate electrode is improved, and the capacitive coupling between the control gate electrode and the floating gate electrode is further ensured. That is, polycrystalline silicon is deposited on the entire surface,
Sidewall spacers are formed on the side walls of the floating gate electrode using isotropic and anisotropic etching. By removing the oxide film formed on the side wall spacer and depositing the polycrystalline silicon in an in-situ manner, a control gate electrode electrically connected to the side wall spacer can be formed.

Further, in order to reduce the sheet resistance of polycrystalline silicon on the control gate electrode, impurity ions may be implanted and a refractory metal silicide may be formed on the control gate electrode. The implantation condition is that the implantation energy is about 20 ke.
v, P, and the dose amount are 5 × 10 ¹⁵ to 8 × 10 ¹⁵ / cm ² . Further, the ratio of the high melting point metal to silicon in the silicide is preferably 1/3. Examples of the high melting point metal include W and Ti.

Thereafter, a nonvolatile memory is formed through the same steps as in the above-described manufacturing method. The non-volatile memory of the present invention is formed with a first conductivity type semiconductor substrate and a surface layer on a main surface of the semiconductor substrate at a constant interval, and at least a part of one surface is in contact with the main surface. A source impurity diffusion region and a drain impurity diffusion region of a second conductivity type formed on surfaces having different crystal plane orientations; a channel region provided between the source impurity diffusion region and the drain impurity diffusion region; A gate insulating film, a floating gate electrode provided on the gate insulating film, and a control gate electrode provided via an interlayer insulating film such that at least a part thereof is stacked thereon,
The channel region has an inclined portion in contact with the drain impurity diffusion region and having a surface having a different crystal plane orientation from the main surface of the semiconductor substrate, and the source impurity diffusion region is relatively higher than the drain impurity diffusion region. The feature is that the channel length can be substantially increased, the area is small, the writing and erasing speed is fast, erroneous erasure is prevented at the time of reading, and mass production and miniaturization are realized. And a nonvolatile memory having excellent durability in frequent writing / erasing and reading.

In the present invention, the drain avalanche hot carrier injection mechanism shown in FIG. 37A is described as a hot electron injection mechanism. It is not clear whether such an injection mechanism is provided. For example, it is conceivable that hot electrons are injected by a substrate hot electron injection mechanism (FIG. 37B), a secondary impact ionization hot electron injection mechanism (FIG. 38), or the like. It goes without saying that, by changing the injection mechanism, it can be applied to a single power supply and a lower bias voltage.

Further, in the method for manufacturing a nonvolatile memory according to the present invention, a step of forming an element isolation insulating film in a predetermined region on one main surface of a semiconductor substrate of a first conductivity type; and forming at least Fowler-Nordheim Second in the area where the tunnel occurs
Forming a conductive type low-concentration impurity diffusion region; forming a gate insulating film on the active region in which the low-concentration impurity diffusion region is formed; Forming a layer so as to overlap with an area determined according to the capacitance between the gate electrode and the control gate electrode; forming an interlayer insulating film on the floating gate electrode; Forming a control gate electrode patterned in a stacked manner, and forming a source region and a drain region by implanting a second conductive type impurity into the active region at a high concentration using the control gate electrode and the floating gate electrode as a mask. Therefore, when forming the low-concentration impurity diffusion region, the gate oxide film is not damaged and the breakdown voltage is not reduced. FIG. 39 shows a plan view of the memory cell of the present invention. Since double diffusion is not used for forming the source region, the area of the source region can be reduced.

According to the nonvolatile memory and the manufacturing method of the present invention in which the floating gate electrode is present on the inclined portion of the channel region, the bird's beak at the LOCOS end is removed from the floating gate electrode which has been conventionally formed by photoetching. The floating gate can be formed by etching the polycrystalline silicon by RIE using the insulating film selectively formed in the thus formed inclined region as a mask. Therefore, the cell area can be reduced as compared with the conventional nonvolatile memory. In addition, in the operation of the nonvolatile memory of the present invention, if the ion implantation energy of channel doping is adjusted so that Rp (implantation depth) comes to the pinch-off point at the time of writing, the writing efficiency is improved. Most of the coupling capacitance ratio between the control gate electrode and the inclined floating gate electrode is determined by the capacitive coupling area between the side wall of the control gate and the floating gate, so that the area is kept constant by controlling the thickness and width of the floating gate electrode. can do. Therefore, even if the floating gate electrode is inclined, the coupling capacitance ratio with the control gate electrode hardly fluctuates.

[0075]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [Embodiment 1] Hereinafter, the present invention will be described in more detail by way of examples. However, the present invention is not limited to the following examples. Various modifications based on technical ideas are possible. Embodiment 1 A case where a flash memory cell transistor and a method for manufacturing the same according to the present invention are applied to a self-aligned flash memory cell transistor will be described with reference to the drawings.

FIG. 1 is a sectional view showing the structure of a single cell in a flash memory according to the present invention. In the figure, 1 is a P-type semiconductor substrate, 2 is a field doped layer, 3 is an element isolation oxide film (L
OCOS). 4 is a channel region, 5 is a first gate insulating film, 6 is a second gate insulating film provided on the inclined portion and formed using the channel region 4 as a material, 7 is a first polysilicon layer (floating gate electrode), 8 is a third gate insulating film, 9 is a second polysilicon layer (control gate electrode), 1
Reference numeral 0 denotes a source region (N + -type impurity region), 11 denotes a drain region (N + -type impurity region), and 12 denotes an LDD region for improving the breakdown voltage during an erasing operation.

The operation principle of the flash memory of this embodiment is the same as that of the conventional example, except that the second gate insulating film 6 is formed by a bird's beak formed by a bird's beak of an element isolation oxide film.
Formed in a beak length slope (about 0.6-0.8 μm),
An important feature is that the second gate insulating film 6 is formed on the channel region 4 which is controlled in advance within the silicon substrate 1 with high precision. That is, writing can be performed by applying a high voltage to the drain region 11 and the control gate electrode 9, attracting generated hot carriers by the control gate electrode 9, and accumulating the hot carriers in the floating gate electrode 7. Erasing is performed by applying a high voltage to the source region with the control gate electrode 9 grounded (or a negative bias),
This can be performed by discharging the accumulated charges in the floating gate electrode 7 using FN tunnel injection. At this time, the charge is released through the thin first gate insulating film 5. Further, since the drain region 11 is originally formed in the region where the element isolation oxide film is formed, the carrier charge is directed from the upper portion to the lower drain region 11 and advances to the second gate insulating film 6 at a certain angle. Will be.

Therefore, the electric charges are more likely to jump into the second gate insulating film 6 than in the conventional structure in which electric charges proceed almost completely in the horizontal direction with respect to the semiconductor surface. Therefore,
The efficiency of drawing hot carriers into the floating gate electrode 7 can be improved. On the other hand, since the structure is such that charges are extremely unlikely to enter the first gate insulating film 5, the breakdown voltage at the edge in the channel length direction is secured by the LDD region 12 so that the avalanche breakdown on the source side can be prevented. It becomes possible to suppress. Therefore, restrictions on the thickness of the gate insulating film, the erase voltage, and the write voltage are relaxed, and a flexible and high-performance device can be realized.

Further, by making the second gate insulating film thicker and the first gate insulating film thinner, basic operations such as writing to the floating gate electrode by the electric field of the control gate electrode and erasing by the electric field of the source region are repeatedly performed. Can be improved over the conventional flash memory. Further, if the film characteristics of the gate insulating film and the capacitive coupling between each electrode or the source / drain region and the gate insulating film are adjusted, the basic operation can be further improved.

At the time of writing, since the first gate insulating film is thinner than the second gate insulating film, the channel region under the first gate insulating film is more strongly inverted than the channel region under the second gate insulating film. For this reason, the channel becomes narrow under the thick oxide film region, so that electrons can easily move under the floating gate electrode, and writing can be easily performed.

A method for manufacturing the device shown in FIG. 1 will be described. 6 to 20 are single-cell cross-sectional views for describing a method of manufacturing a self-aligned nonvolatile semiconductor memory device according to the present invention. First, as shown in FIG. 6, a buffer oxide film 22 was grown at 1000.degree. On the P-type silicon substrate 1 whose surface oxygen concentration was sufficiently lowered by gettering or the like.
In addition, bird's beak length (bird's beak le
ngth), in order to suppress the occurrence of transition and slip in the silicon substrate in this region and to alleviate the stress of the silicon nitride film to be formed later of up to 10 ¹⁰ dyn / cm ² , at least 1000 °. It is preferable to have a base oxide film. In this embodiment, a bird's beak length of 0.8 microns was formed. Next, a photoresist pattern 23 having an opening only in the element formation region was formed on the buffer oxide film 22.

Next, as shown in FIG. 7, boron was implanted at a dose of 5 × 10 ¹² ions / cm ² and an implantation energy of 100 KeV.
Then, the channel doping layer 24 was formed by implanting a sufficient depth (Rp 0.3 μm or more) so as not to be affected by the tail of the later boron high concentration implantation profile. This ion implantation must be performed in an extremely clean device and environment, and a device that does not sputter heavy ions was used.

Next, as shown in FIG. 8, the photoresist pattern was removed, and a silicon nitride film serving as an oxidation preventing film was deposited at 1000 °. Next, on this silicon nitride film, a photoresist pattern 26 having an opening only in a region where an element isolation oxide film for isolating an element region into islands was formed. By selectively removing the silicon nitride film using the pattern 26 as a mask, the silicon nitride film pattern
Was formed.

Next, as shown in FIG. 9, after removing the resist pattern 26 by etching, the entire surface is subjected to SOG.
By applying a film, the silicon nitride film pattern 25 is formed.
A sidewall spacer 27 for restricting the passage of ion implantation was formed on the side wall of the opening. Subsequently, boron for forming a channel stopper is implanted with an implantation energy of 40 KeV.
Ion implantation was performed at a dose of 5 × 10 ¹³ ions / cm ² to form a field dope layer 28.

Next, as shown in FIG. 10, wet oxidation was performed at 1000 ° C., and a silicon oxide film was grown on the exposed surface of the substrate 1 to form an element isolation oxide film 29. that time,
Boron atoms in the field dope layer 28 were activated and redistributed to form an inversion prevention layer 30 under the device isolation oxide film 29. Next, after forming a resist pattern 214 as shown in FIG.
Then, anisotropic etching was performed using the silicon nitride film 25 as a mask, and a part of the element isolation oxide film 29 was removed.

Next, as shown in FIG. 12, isotropic etching was performed to etch a predetermined amount of the element isolation oxide film 29 under the silicon nitride film 25. Further, as shown in FIG. 13, the SOG film 215 was deposited with a thickness of 6000 ° by being applied while being appropriately etched back. Next, as shown in FIG. 14, the silicon nitride film 25 was etched to lift off the SOG film formed thereon.

Next, as shown in FIG. 15, the end portions of the buffer oxide film 22 and the element isolation oxide film 29 were removed. Thereafter, as shown in FIG. 16, the entire surface was thermally oxidized at 900 ° C. to form a first gate insulating film 5 and a second gate insulating film 6. Next, as shown in FIG. 17, a polysilicon layer was deposited over the entire surface at a thickness of 1500 °, and the polysilicon layer was etched using a resist pattern to form a floating gate electrode 7.

Next, as shown in FIG.
Using the oxide film 22 and the floating gate electrode 7 as a mask, impurities are implanted at a high concentration to form the source region 10 and the drain region 11. At this time, since the source region 10 is formed by implanting impurities through the gate insulating film 5, the source region 10 is formed shallower than the drain region 11. Furthermore,
Even if a part of the floating gate electrode (for example, the drain side) is masked for preventing ion implantation and ion implantation is performed again to partially change the dose of the floating gate electrode and increase the dose of the source and drain regions. Good.

Further, as shown in FIG. 19, the surface of the floating gate electrode 7 was oxidized to form a third gate insulating film 8.
Next, a polysilicon layer was formed on the entire surface, the polysilicon layer was etched using a resist pattern, and a control gate electrode 9 was formed through an oxidation process. Also, in order to reduce the sheet resistance of polycrystalline silicon on the control gate electrode,
Arsenic is also 40 KeV and the dose is 3 × 1 for the control gate electrode.
0 ¹⁵ / cm ² , and DC is applied to the control gate electrode.
The refractory metal silicide layer may be formed by sputtering or the like. The composition ratio (M / Si) of the high melting point metal and silicon in the silicide was set to about 1/3.

Thereafter, as shown in FIG. 20, the ends of the control gate electrode 9 and the floating gate electrode 7 were aligned in a self-aligned manner, and the entire surface was oxidized. Then, an impurity was implanted from the oblique direction while rotating the substrate to form an LDD structure 12 under the floating gate electrode 7 on the source region side. Thereafter, an interlayer insulating film 43 is formed according to a normal process, a contact hole is opened, metallization 44 is performed, and a passivation film (not shown) is formed.
A flash memory having a self-aligned structure using the present invention has been completed (see FIG. 1).

FIG. 39 is a plan view of the flash memory shown in FIG. In the figure, 15 is a Fowler-Nordheim tunnel region, 16 is a control gate line, and 17 is a floating gate electrode and a channel region. In the above-mentioned flash memory, the surface impurity concentration of the source region overlapping with the gate electrode is 10 ¹⁸ io when the gate insulating film is 60 to 100 °.
ns / cm ³ or less, and the high concentration region is preferably 10 ¹⁹ ions / cm ³ or more. This is to prevent an increase in leakage current due to the Zener phenomenon in the impurity diffusion layer immediately below the gate electrode when a thin gate insulating film as in the present invention is used.

The operation method of the present invention will be described with reference to FIGS. 24 (a) and 24 (b) and FIG. Note that FIG.
(A) and (b), in FIG. 25, 1 is a P-type semiconductor substrate, 4
Is a channel region, 5 is a first gate insulating film, 6 is a second gate insulating film provided on the inclined portion and formed using the substrate of the inclined portion as a material, 7 is a floating gate electrode, and 8 is a third gate insulating film. Film, 9 a control gate electrode, 10 a source region, 1
Reference numeral 1 denotes a drain region, 12 denotes an LDD structure for improving a breakdown voltage during an erasing operation, and 13 denotes a depletion layer.

24 (a), (b) and FIG. 25, the traveling direction of electrons accelerated from the source region to the drain region in the channel region depends on the shape of the channel region at the time of entering the inclined portion. Turn to Therefore, the progress in the substrate is distorted (although it cannot be said exactly, the dislocation compound defect is distorted due to edge stress or the like at the time of forming the element isolation oxide film), and the edge of the depletion layer of the drain region is formed at the inclined portion. The generation of hot electrons is promoted by a synergistic effect with a high electric field generated by the overlapping of the parts.

In a cell provided with a source region relatively above a drain region, when a (100) silicon substrate is used as the gate insulating film on the drain region side, an inclined portion ((111) plane) of the silicon substrate is used. ) Is formed as a material, so that the portion on the inclined portion on the drain region side is formed thicker than the source region side in the same thermal oxidation step. Therefore, a countermeasure against erroneous erasure at the time of reading is easier than in a device in which the drain region is located above. That is, since the thickness of the gate insulating film on the drain region side is increased, the formation step of forming an impurity layer, which is the most difficult at a practical level, can be omitted.

Further, in view of the use of a single power supply and the reduction of the applied voltage, the advantages of the devices shown in FIGS. 24A and 24B and FIG. A description will be given of an example of writing a pattern. First, positive voltages Vd and Vcg are applied to the drain region and the control gate electrode, respectively.
Is applied. At this time, assuming that the substrate and the source region have the same potential and Vs = 0, the current Id flowing through the channel region can be approximated by the following equation.

[0096]

(Equation 1)

Here, d1 is the film thickness of the gate insulating film in the planar channel region, d2 is the film thickness of the gate insulating film in the inclined channel region, εox is its conductivity, μn is the mobility of electrons, and 11 is the film thickness of the planar channel region. The execution channel length, W, is the channel width. For convenience, it is assumed that the conductivity of the gate insulating film in the planar channel region and the conductivity of the gate insulating film in the inclined channel region are the same.

Vt is a threshold voltage for the floating gate electrode and depends on the effective channel length 1. Vf is the potential of the floating gate electrode and is represented by the following equation.

[0099]

(Equation 2)

Here, Cfs is the capacitance between the floating gate electrode and the source region, Cfssl is the capacitance between the floating gate electrode and the inclined channel region, Cfss2 is the capacitance between the floating gate electrode and the planar channel region, and Cfd is the floating gate electrode and the drain. The capacitance between the regions, Cfc, is the capacitance between the floating gate electrode and the control gate electrode. Qf indicates that the current flowing through the channel region is
This is the amount of charge in the floating gate electrode generated by injecting electrons having sufficient energy and having gained sufficient energy into the floating gate electrode by the electric field between the drain regions. Qf is determined depending on the ratio γ of hot carriers injected into the gate insulating film. ΓI at channel current Id
The time integral of d is

[0101]

(Equation 3)

Is represented by At this time, the electric field strength in the gate insulating film is

[0103]

(Equation 4)

The time integral is approximated by the following equation.

[0105]

(Equation 5)

Here,

[0107]

(Equation 6)

Where S1 is the sum of the area of the effective channel length ([11 + 12] × W) and the area where the floating gate electrode and the source region overlap each other. By integrating this, the writing time Tw of this transistor becomes

[0109]

(Equation 7)

This is a function of Cff1 and Cff2 have a thickness d
Since it is determined by differentiating 1 and d2 or by optimally setting l1 + l2, adjusting this value makes it easier to adjust the writing time than in the conventional structure. Further, as described above, since the current in the channel region is bent, the injection efficiency at that portion is improved.

Next, three operations of writing, erasing and reading, which are basic operations of the device, will be specifically described. First, the write operation will be described. When the source region is connected to the ground, 5 volts are applied to the drain region, and 12 volts are applied to the control gate electrode, a high electric field flows from the source region to the drain region, and the silicon surface near the drain region. This generates electrons that can cross the energy barrier to the insulating film. In the structure of the present invention, since the source region is formed in a region relatively higher than the drain region, the high field electrons travel toward the insulating film near the drain region at a certain angle. Therefore, electrons are easily drawn by the electric field of the control gate electrode, and writing performance is improved.

The erasing operation can be performed in exactly the same manner as in the prior art. When an erasing voltage is applied, an electric field is emitted from the floating gate electrode to the source region side. Since the insulating film near the source region is thinned to about 10 nm,
The erasing speed can be increased. The extraction amount of the electrons is adjusted to an appropriate value by the control circuit, and the threshold value of the cell is determined.

In the read operation, the read operation can be performed by applying a voltage of 5 volts to the drain region and the control gate electrode and checking whether or not there is a current flowing out of the drain region. At that time, most of the gate insulating film is covered with the thick gate insulating film, and the erasing insulating film in the vicinity of the thinned source region is formed at an angle where FN tunneling does not easily occur. Also, erroneous erasure can be prevented by applying a voltage to the drain region for a long time during reading.

Incidentally, even in a device in which the floating gate electrode extends over the drain region via the insulating film, there is no control gate electrode on the drain region, so that erroneous erasure does not pose a problem. However, in that case, the condition is that the insulating film is formed thicker than the gate insulating film. Embodiment 2 FIG. 26 is a schematic sectional view of a flash memory according to the present invention. In this flash memory, the surface area of the upper part of the floating gate electrode on the drain region side is made larger than the surface area of the upper part on the source region side in order to efficiently take in the hot carriers generated in the vicinity of the drain region into the floating gate electrode.

This flash memory was manufactured in the same manner as in Example 1 except that it was manufactured as described below. That is, a floating gate electrode is formed, and an oxide film is formed thereon. Next, a resist pattern having an opening is formed on the floating gate electrode on the drain region side, and reactive ion etching is performed using this pattern as a mask to remove the oxide film at the opening. Next, after laminating polysilicon on the entire surface, etch back is performed by anisotropic etching to remove the polysilicon deposited on portions other than the side walls of the opening of the oxide film. Further, by removing the oxide film, a floating gate electrode having a projection is formed. Embodiment 3 FIG. 27 shows an embodiment in which the element isolation using one element isolation oxide film is replaced with the element isolation using a gate electrode 51. Further, the third gate insulating film was formed so as to be thin on the drain region side and thick on the source region side. In this flash memory, the pull-in efficiency by the control gate electrode could be improved.

In FIG. 28, element isolation is realized by the gate 53. In the manufacturing process of this device, after removing the LOCOS oxide film, a floating gate electrode and an element isolation gate are formed in the same process, and the source region and the drain region are formed using the mask as a mask. With such a configuration, conduction between adjacent source regions can be flexibly realized by the element isolation gate 53. Note that the element isolation gate may be realized by a floating gate electrode and a control gate electrode. Thus, the degree of element isolation can be set by changing the amount of charge stored in the floating gate electrode in advance. Embodiment 4 FIG. 29 shows that the same effect can be obtained by selectively implanting phosphorus as an impurity and forming insulating films having different dielectric constants instead of changing the film thicknesses of the first and second gate insulating films. This is an embodiment of the present invention. In this example, the dielectric constant of the first gate insulating film 65 was 3.9, and the dielectric constant of the second gate insulating film 66 was 3.5. Fifth Embodiment As shown in FIG. 30, the device shown in FIG. 1 can be formed in a well 45. The conductivity type of the well may be either the same conductivity type as the substrate or the opposite conductivity type. Embodiment 6 As shown in FIG. 31, the device shown in FIG.
(For example, the impurity is phosphorus and the dose is 1 × 10 ¹² to 1 ×
10 ¹³ / cm ² ) and a P well 47 (for example, boron is used as an impurity and the dose is 1 × 10 ¹³ to 1 × 10 ¹⁴ / cm ² ). In this way, the potential of each well can be controlled independently, and the voltage of the control gate electrode can be reduced by applying a negative bias to the P well. Embodiment 7 As shown in FIG. 32, the flash memories of the present invention can be arranged in a matrix. FIG. 32 shows NO
This is an R-type memory cell array. Reference numeral 84 in the figure denotes a storage site where the flash memory of the present invention is arranged. Reference numeral 85 denotes a row address line, and a row address decoder 86
This is a signal line wired from. Reference numeral 87 denotes a column address line, which is a signal line wired from the column address decoder 88. Reference numeral 89 denotes an erasure line, which is a signal line wired from the source decoder 90. Embodiment 8 The present invention will be further described with reference to FIG. First, at the time of writing, the threshold value of the cell 1-a, which has already been programmed, is 5 V (the threshold value of the cell is increased from 1 V to 5 V by injection of hot electrons subjected to impact ionization into the floating gate electrode). ), The word line WL1 is at 0 V (not selected),
It is assumed that 12 V (selection) is applied to WL2 for writing to the cell 1-b and 6V is supplied to BLa.

At this time, between the drain and the floating gate electrode of the cell 1-a, the sum of 6V applied to BLa and the voltage of the charge stored in the floating gate electrode that raises the threshold value from 1V to 5V (for example, 6 + 4V) will be applied. That is, the already written cell 1-a
Means that when writing to 1-b, a voltage close to 10 V (actually, slightly reduced due to the relationship between the capacitances) is applied between the drain and the floating gate electrode.

In the flash memory of the present invention in which the drain is a bit line, some cells receive a voltage close to 10 V, which is the same number of times as the number of cells connected to the bit line, between the drain and the floating gate electrode. On the other hand, each cell receives a voltage of 13 V at the time of erasing, and the charge is erased. When comparing the voltage applied between the drain and the floating gate electrode at the time of writing to the cell 1-a, and the voltage applied between the source and the floating gate electrode at the time of erasing, it cannot be said that there is a very large difference. This causes a problem that the stored contents of the cell are lost when another cell commonly connected to the drain is written. However, the charge erasing mechanism of the device of the present invention utilizes Fowler-Nordheim tunneling. Therefore, if the barrier height (voltage difference) cannot be increased, the tunnel distance (the thickness of the gate insulating film) must be increased. do it.

In other words, in order to easily erase data at the time of erasure and prevent erroneous erasure at the time of writing, a cell is formed so that the gate insulating film on the drain side is made thicker and the source side is made thinner. What is necessary is just to arrange them symmetrically and connect them to form a memory cell matrix. Embodiment 9 As shown in FIG. 40, the present invention can be applied to a thin film transistor.

That is, an inclined portion is formed on the P-type silicon substrate 1 having an impurity concentration of about 10 ¹⁵ / cm ³ , and a SiO ² (insulating film) 48 of about 5000 ° is grown. Next, amorphous silicon 49 of about 400 ° is formed, and the arsenic impurity concentration of the source / drain regions (10, 11) is 10 ²¹ / c.
m ³ , the boron impurity concentration in the channel region is 4 × 10
Ion implantation is performed to about ¹⁶ / cm ³ .

The gate insulating film is formed by a vapor deposition method to a thickness of 200Å.
And the degree to prepare a polysilicon floating gate electrode 7 of about 2000Å as phosphorus impurity concentration is about 10 ²⁰ ~10 ²¹ / cm ^3. Next, an interlayer insulating film of about 150 ° is formed, and a polysilicon control gate electrode 9 of about 3000 ° thickness is formed, whereby a thin film transistor as shown in FIG. 40 can be formed.

It is preferable that the phosphorus impurity concentration of the control gate electrode 9 is higher than that of the floating gate electrode 7 for speeding up. By applying the structure of the present invention to a thin film transistor, the parasitic capacitance of the bit line can be reduced, and the junction leak current can be reduced. Embodiment 10 FIG. 41 is a sectional view of a nonvolatile memory cell according to an embodiment of the present invention. 301 is a P-type semiconductor substrate, 302 is a field dope layer, 303 is an element isolation oxide film (LOC)
OS). 304 is a channel region, 305 is a gate insulating film, 306 is a first polysilicon layer (floating gate electrode), 307 is an interlayer insulating film, 308 is a second polysilicon layer (control gate electrode), and 309 is a source region ( Reference numeral 310 denotes a drain region (N + impurity region).

The manufacturing method of the present invention will be described with reference to FIG. First, a buffer oxide film 312 was grown at 1000 ° on a P-type silicon substrate 311 in which the oxygen concentration and crystal defects on the surface were sufficiently reduced by gettering or the like. Next, a silicon nitride film 313 serving as an oxidation prevention film was deposited at 1000 °. Next, on this silicon nitride film 313, a photoresist pattern 314 having an opening only in a region where an element isolation oxide film is formed was formed in order to isolate an element region into an island shape.
Using this pattern as a mask, the silicon nitride film 31
3 was formed (see FIG. 42A).

Next, after removing the resist pattern 314 by etching, SOG is applied to the entire surface, so that a sidewall spacer (not shown) for restricting the passage of ion implantation is provided on the side wall of the pattern made of the silicon nitride film 313. Formed. Subsequently, boron for forming a channel stopper is implanted with an implantation energy of 40 Kev and an implantation amount of 5 ×.
Implantation was performed under the condition of 10 ¹³ / cm ² to form a field dope layer.

Next, the substrate 31 is subjected to wet oxidation at 1000 ° C.
An element isolation oxide film 315 was formed by growing a silicon oxide film on the exposed surface of No. 1. At this time, the boron atoms in the field dope layer are activated and redistributed to form an inversion prevention layer 316 under the device isolation oxide film 315 (FIG. 42).
(C)). Next, after forming a resist pattern, anisotropic etching is performed using the resist pattern 317 and the silicon nitride film 313 as a mask, and the element isolation oxide film 31 is formed.
Part 5 was removed (see FIG. 43 (a)).

Next, isotropic etching is performed to form a bird's beak oxide film under the silicon nitride film 313 by a predetermined amount (determining the position of the end of the predetermined floating gate electrode on the drain region side).
Etching was performed (see FIG. 43B). Further, after the silicon nitride film 313 is removed by etching, plasma
A 5000-nm CVD nitride film was deposited. Further, the element isolation region 31
5 and the element isolation region opening 318 were covered with a photoresist, and the buffer oxide film and the plasma CVD nitride film on the oxide film at the end of the bird's beak were removed (see FIG. 43 (c)).

In this state, boron is dosed (5 × 10 ¹²
/ Cm ² ) and an implantation energy of 100 Kev on the substrate at the edge (bird's beak oxide film) of the element isolation oxide film.
By performing ion implantation through Step 5, a concentration gradient was formed in the inclined channel region (see FIG. 44A). Next, the edge portions of the buffer oxide film and the element isolation oxide film were removed. Thereafter, the entire surface was thermally oxidized at 900 ° C. to form a gate oxide film 319. This gate oxide film was formed thin on the source region side, and a thin oxide film on the Fowler-Nordheim tunnel region was formed (see FIG. 44B).

Next, a polycrystalline silicon layer 320 is formed
Deposited at 1500 °, SOG 321 was applied, and as shown in FIG. 44 (c), only the polycrystalline silicon at the step was exposed, and unnecessary polycrystalline silicon at the exposed portion was removed. A CVD oxide film 322 having good step coverage was deposited flat while repeating etch back at least once (FIG. 4).
5 (a)). Thereafter, anisotropic etching was performed, and the point at which the surface of the polycrystalline silicon layer 320 was exposed was determined as the etching end point. At this time, the CVD oxide film 323 remains on the polysilicon layer formed in the channel inclined portion (see FIG. 45B). Next, polycrystalline silicon 3 whose surface is exposed by anisotropic reactive etching having a large selectivity between polysilicon such as hydrogen bromide and an oxide film.
20 was selectively etched to form a floating gate electrode 324 (see FIG. 45C).

Next, using the floating gate electrode 324 and the CVD oxide film 322 as a mask, phosphorus is rotationally implanted at low concentration and low energy to form an N − diffusion layer 325 (FIG. 46).
(A)). The surfaces of the floating gate electrode 324 and the exposed portion of the substrate were oxidized to form an interlayer insulating film 326. Thereafter, using the floating gate electrode 324 as a mask,
By implanting s, a source region and a drain region 327 were formed (see FIG. 46B).

Then, a nitride film was formed on the entire surface, and the nitride film was isotropically and anisotropically etched to form a nitride film sidewall on the side wall of the floating gate electrode for preventing oxidation. After forming an interlayer insulating film of 1000 ° or more on the upper surface of the floating gate through an oxidation process, the nitride film sidewall was removed. Thereafter, an etching process was performed until the thin oxide film on the side wall was sufficiently over-etched, and after performing a pre-process, a thin interlayer insulating film was accurately formed on the side surface of the floating gate electrode. Performing sacrificial oxidation at this time improves reliability.

Next, polycrystalline silicon is deposited on the entire surface to form a control gate electrode 328 (word line) (FIG. 46).
(C)). In order to lower the sheet resistance of the polycrystalline silicon of the control gate electrode 328, arsenic is also implanted into the control gate at 40 Kev and a dose of 3 × 10 ¹⁵ / cm ² , and a high melting metal silicide is deposited on the control gate electrode 328. Formed. The composition ratio (M / Si) of the high melting point metal and silicon in the silicide was set to about 1/3.

After the entire surface is oxidized, an interlayer insulating film is formed in accordance with a normal process, contact holes are formed and metallization is performed, and protection is performed by a passivation film. A non-volatile memory device having a channel type structure has been completed.

[0133]

According to the present invention, a nonvolatile memory according to the present invention is formed on a first conductivity type semiconductor substrate and a surface layer of a main surface of the semiconductor substrate at a predetermined interval, and at least a part of one of the surfaces. A source impurity diffusion region and a drain impurity diffusion region of a second conductivity type formed on a surface having a different crystal plane orientation from the main surface; and a channel region provided between the source impurity diffusion region and the drain impurity diffusion region. A gate insulating film provided on the channel region, a floating gate electrode provided on the gate insulating film, and a control gate electrode provided via an interlayer insulating film such that at least a portion thereof is laminated thereon. Wherein the channel region has an inclined portion made of a surface which is in contact with the drain impurity diffusion region and has a crystal plane orientation different from the main surface of the semiconductor substrate, and Since scan impurity diffusion region is characterized by being provided relatively above the drain impurity diffusion regions can take substantially channel length long. Therefore, there is an advantage that punch-through is less likely to occur than in the case of the same two-dimensional design rule.

Further, according to the present invention, the area is small,
It is possible to realize a nonvolatile memory that has a high writing and erasing speed and can prevent erroneous erasure during reading. Also, since it is excellent in mass production and miniaturization, and has excellent durability in frequent writing / erasing and reading, it is used as an image processing memory that frequently executes simple calculations of large amounts of data, As a device that replaces memory, its industrial value is enormous.

Further, according to the method of manufacturing a nonvolatile memory of the present invention, a step of forming an element isolation insulating film in a predetermined region on one main surface of a semiconductor substrate of a first conductivity type; and forming at least Fowler-Nordheim Second in the area where the tunnel occurs
Forming a conductive-type low-concentration impurity diffusion region; forming a gate insulating film on the active region in which the low-concentration impurity diffusion region is formed; Forming a layer so as to overlap with an area determined according to the capacitance between the gate electrode and the control gate electrode; forming an interlayer insulating film on the floating gate electrode; Forming a control gate electrode patterned in a stacked manner, and forming a source region and a drain region by injecting a second conductive type impurity into the active region at a high concentration using the control gate electrode and the floating gate electrode as a mask. Process, a highly accurate and thin insulating film can be formed with good reproducibility, and a nonvolatile memory with high durability and reliability can be manufactured. That.

In the nonvolatile memory of the present invention in which the floating gate electrode is present at the inclined portion of the channel region, the floating gate electrode can have an extremely small structure without using photoetching, and the memory cell can be significantly reduced. Yes, excellent in mass production. According to the method for manufacturing a nonvolatile memory, a fine floating gate electrode with high accuracy can be formed with good reproducibility, and a nonvolatile memory with high durability and reliability can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 2 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 3 is a diagram for explaining an electrical coupling state of the nonvolatile memory of the present invention.

FIG. 4 is a diagram for explaining an electrical coupling state of the nonvolatile memory of the present invention.

FIG. 5 is a diagram for explaining an electrical coupling state of the nonvolatile memory of the present invention.

FIG. 6 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 7 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 8 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 9 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 10 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 11 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 12 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 13 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 14 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 15 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 16 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 17 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 18 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 19 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 20 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 21 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 22 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 23 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

24A is a schematic sectional view of a nonvolatile memory according to the present invention, and FIG. 24B is an enlarged view of a portion A in FIG.

FIG. 25 is a diagram further enlarging an inclined portion of a channel region of the nonvolatile memory of FIG. 24;

FIG. 26 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 27 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 28 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 29 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 30 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 31 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 32 is a wiring diagram when the nonvolatile memories of the present invention are arranged in a matrix.

FIG. 33 is a wiring diagram when the nonvolatile memories of the present invention are arranged in a matrix.

FIG. 34 is a schematic sectional view of a conventional nonvolatile memory.

FIG. 35 is a schematic sectional view of a conventional nonvolatile memory.

FIG. 36 is a schematic sectional view of a conventional nonvolatile memory.

FIG. 37 is a schematic view of a hot electron injection mechanism of the nonvolatile memory of the present invention.

FIG. 38 is a schematic view of a hot electron injection mechanism of the nonvolatile memory of the present invention.

FIG. 39 is a plan view of the nonvolatile memory in FIG. 1;

FIG. 40 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 41 is a schematic sectional view of a nonvolatile memory of the present invention.

FIG. 42 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 43 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 44 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 45 is a schematic cross-sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

FIG. 46 is a schematic sectional view showing a part of the manufacturing process of the nonvolatile memory of the present invention.

[Explanation of symbols]

1, 301, 311 P-type semiconductor substrate 2, 302 Field dope layer 3, 29, 302, 315 Device isolation oxide film (LOCO
S) 4, 104 Channel region 5, 65 First gate insulating film 6, 66 Second gate insulating film 7, 306, 324 First polysilicon layer (floating gate electrode) 8 Third gate insulating film 9, 308, 328 Second polysilicon layer (control gate electrode) 10, 309 Source region (N + impurity diffusion region) 11, 310 Drain region (N + impurity diffusion region) 12 LDD region 13 Sacrificial oxide film 14, 23, 26, 314, 317 Photoresist pattern 15 Fowler-Nordheim tunnel region 16 Control gate line 17 Floating gate electrode and channel region 22, 312 Buffer oxide film 24 Channel dope layer 27 Sidewall spacer 28, 303 Field dope layer 30, 316 Inversion prevention layer 43 , 326 interlayer insulation film 44 metallization 45 well 46 N well 47 P well 48 oxide film 49 amorphous silicon 51 gate electrode 53 gate 84 storage site 85 row address line 86 row address decoder 87 column address line 88 column address decoder 89 erase line 90 source decoder 214 resist Patterns 215, 321 SOG film 313 Silicon nitride film 318 Element isolation region opening 319 Gate oxide film 320 Polycrystalline silicon 322, 323 CVD oxide film 325 N− diffusion layer 327 Source region and drain region

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 29/792 F-term (Reference) 5F083 EP03 EP04 EP05 EP15 EP23 EP24 EP43 EP68 EP77 ER14 ER16 ER22 GA01 GA03 GA09 GA16 GA24 GA30 HA02 JA32 JA35 JA53 NA04 NA05 PR03 PR12 PR21 PR22 PR23 PR29 PR36 PR39 5F101 BA07 BB05 BB08 BB17 BC02 BC04 BC11 BC13 BD05 BD06 BD07 BD30 BD33 BD35 BE07 BF08 BF09 BF10 BH03 BH14 5F110 AA12 AA14 BB08 CC10 DD05 DD10 DD05 GG15 GG22 GG25 GG32 GG34 GG52 HJ01 HJ04 HJ13

Claims (4)

[Claims] 1. A semiconductor substrate of a first conductivity type and a second substrate formed at a constant interval on a surface layer of a main surface of the semiconductor substrate.
A conductive type source impurity diffusion region and a drain impurity diffusion region, a channel region provided between the source impurity diffusion region and the drain impurity diffusion region, a gate insulating film provided on the channel region, and the gate insulating film A floating gate electrode provided thereon, and a control gate electrode provided via an interlayer insulating film so as to be at least partially laminated thereon, wherein the channel region is in contact with the drain impurity diffusion region and A semiconductor substrate main surface having an inclined portion having a crystal plane orientation different from that of the semiconductor substrate, wherein the source impurity diffusion region is provided relatively above the drain impurity diffusion region; and the drain impurity diffusion region is the inclined portion. A non-volatile memory, wherein the non-volatile memory extends. 2. A first insulating film formed on a first or second conductive type semiconductor substrate, a first conductive type semiconductor thin film formed on the first insulating film, and the semiconductor thin film. A channel region provided between the source impurity diffusion region and the drain impurity diffusion region of the second conductivity type formed at regular intervals in the surface layer of the main surface of the semiconductor device, and a gate insulating film provided on the channel region A floating gate electrode provided on the gate insulating film, and a control gate electrode provided on the gate insulating film via an interlayer insulating film so as to be at least partially laminated thereon, and the channel region has an inclined portion. The thin film transistor, wherein the source impurity diffusion region is provided relatively above the drain impurity diffusion region, and the drain impurity diffusion region extends to the inclined portion. 3. The nonvolatile memory according to claim 1, wherein the gate insulating film on the drain impurity diffusion region side is thicker than the gate insulating film on the source impurity diffusion region side. 4. The thin film transistor according to claim 2, wherein the gate insulating film on the drain impurity diffusion region side is thicker than the gate insulating film on the source impurity diffusion region side.