JP2002145670A - Ceramic substrate for semiconductor producing/inspecting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic substrate for a semiconductor producing/ inspecting device, which has a volume resistivity of at least 108 Ω.cm at a high temperature, and is able to assure concealability, a large amount of radiation heat and measuring accuracy by a thermoviewer and suitably used as a hot plate, an electrostatic chuck, a wafer prober, a susceptor or the like. SOLUTION: The ceramic substrate for the semiconductor producing/ inspecting device is characterized in that an electrically conductive body is arranged on the ceramic substrate containing both of amorphous carbon for which a peak can not be detected or is at or below a detection limit on an X-ray diffraction chart and of crystalline carbon for which the peak can be detected and a sintering aid.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate used as an apparatus for manufacturing or inspecting a semiconductor, such as a hot plate, an electrostatic chuck, a wafer prober, etc. TECHNICAL FIELD The present invention relates to a ceramic substrate for a semiconductor manufacturing / inspection apparatus, which is excellent in volume resistivity and thermal conductivity, temperature accuracy by a thermoviewer, and the like.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing and inspection apparatus including an etching apparatus and a chemical vapor deposition apparatus, a heater using a metal base material such as stainless steel or an aluminum alloy, a wafer prober, and the like have been used. Has been used. However, the metal heater has a problem that the temperature control characteristic is poor, and the thickness is large, so that the heater is heavy and bulky, and the corrosion resistance to corrosive gas is also poor.

On the other hand, Japanese Patent Application Laid-Open No. 11-40330 discloses a heater using a ceramic such as aluminum nitride instead of a metal heater. However, aluminum nitride itself, which is a base material of the heater, is generally white or gray-white, and is therefore not preferable as a heater or a susceptor. Rather, black is suitable for this type of application because it has a larger amount of radiant heat, and is particularly suitable for wafer probers and electrostatic chucks because of its high concealment of electrode patterns. In addition, the measurement of the surface temperature of the heater is performed using a thermoviewer (surface thermometer).
However, in the case of white or gray-white, radiant heat is also measured, so that accurate temperature measurement was impossible.

Among the conventional inventions described in Japanese Patent Application Laid-Open No. 9-48668 and the like developed in response to such demands,
In the aluminum nitride substrate, 44-
One containing crystalline carbon such that a peak is detected at a position of 45 ° has been proposed.

[0005]

However, the conventional aluminum nitride substrate to which such crystalline carbon (graphite) is added has a high volume resistivity at a high temperature, for example, a volume resistivity at a high temperature region of 500 ° C. Is 10 ⁸
Since the resistance is reduced to less than Ω · cm, there is a problem that a short circuit occurs in a ceramic substrate having a resistance heating element or the like disposed therein (see FIG. 1). In addition, there is a problem that aluminum nitride itself has reduced thermal conductivity in a high temperature region, and it is necessary to solve this problem.

An object of the present invention is to solve the above-mentioned problems of the prior art. In particular, since the volume resistivity at a high temperature of 200 ° C. or more is sufficiently large, no leak current or short circuit occurs. In addition, the thermal conductivity at high temperature is 60
It is an object of the present invention to provide a ceramic substrate for a semiconductor manufacturing / inspection apparatus, which can have a W / m · k or more and can guarantee concealing properties, a large amount of radiated heat, and measurement accuracy by a thermoviewer. Another object of the present invention is to
An object of the present invention is to provide a ceramic substrate for a semiconductor manufacturing / inspection apparatus that can be suitably used as a hot plate, an electrostatic chuck, a wafer prober, or the like.

[0007]

SUMMARY OF THE INVENTION The present invention relates to a ceramic substrate for a semiconductor manufacturing / inspection apparatus developed to meet the above-mentioned demands, and more particularly to a ceramic substrate made of a crystal such as an oxide, a nitride or a carbide. 2θ of X-ray diffraction chart =
A semiconductor in which a conductor is provided on a ceramic substrate containing both amorphous carbon in which a peak cannot be detected at a position of 10 to 90 ° or below the detection limit and crystalline carbon in which a peak can be detected. This is a ceramic substrate for manufacturing and inspection equipment.

The above-mentioned ceramic substrate for a semiconductor manufacturing / inspection apparatus (hereinafter, also simply referred to as a ceramic substrate for a semiconductor device).
In the above, it is preferable that the conductor is an electrostatic electrode, and the ceramic substrate functions as an electrostatic chuck, or a resistance heating element, and the ceramic substrate functions as a hot plate.

The conductor is formed on the surface and inside of the ceramic substrate, and the conductor inside is at least one of a guard electrode and a ground electrode, and the ceramic substrate functions as a wafer prober. It is desirable.

In the above-mentioned ceramic substrate for a semiconductor device, the carbon content is 200 to 5000 p.
pm is desirable.

Further, the ceramic substrate for a semiconductor device contains a sintering aid comprising at least one of an alkali metal oxide, an alkaline earth metal oxide and a rare earth oxide. Z 87
It is desirable that the brightness specified in 21 be N4 or less.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the study of the present inventors, the diffraction angle 2θ = 10 on the X-ray diffraction chart.
A ceramic substrate containing carbon such that a peak is detected at a position of ~ 90 °, particularly 2θ = 44-45 °,
Since the volume resistivity at a high temperature of 200 ° C. or more is greatly reduced, a leak current or a short circuit may occur between the heating element patterns or between the electrode patterns during heating.

The reason is that the volume resistivity of the ceramic substrate decreases as the temperature increases, and the crystalline carbon has a crystal structure similar to a metal crystal, and
Since the electric conductivity at high temperature is large, it is considered that these two characteristics act synergistically to cause the above-mentioned short circuit.

As a result of further studies by the present inventors to prevent such a short circuit and to increase the electric resistivity of the ceramic substrate, the electric resistivity of the sintered body containing carbon at a high temperature is increased. Are carbons whose crystallinity has been reduced to such an extent that no peak is detected on the X-ray diffraction chart, or carbon dissolved in a crystal phase, that is, carbon whose peak is not detected on the X-ray diffraction chart. I learned that it should be done.

Here, the fact that no peak can be detected on the X-ray diffraction chart means that the diffraction angle 2θ is 10 to 90.
°, especially at 44 to 45 °, meaning that no carbon peak can be detected. It should be noted that various types of crystal systems exist in carbon as described above.
As disclosed in Japanese Patent No. 8668, not only a peak appearing at a diffraction angle 2θ = 44 to 45 ° but also a carbon crystal having a peak appearing at a diffraction angle 2θ = 10 to 90 ° must be considered. (FIGS. 3 and 4
reference).

In the X-ray diffraction chart, not only a peak but also the appearance of a halo is not preferable. The amorphous body usually has a gentle undulation called a halo around 2θ = 15 to 40 °, and the appearance of such a halo means that crystals such as nitrides and oxides constituting the ceramic substrate are present in the crystal. It means that amorphous carbon has penetrated.
As a result, the crystallinity of the nitride or the like is reduced, and the sinterability is impaired, resulting in an increase in lightness and a reduction in strength at high temperatures.

As a specific method for producing carbon such that a peak cannot be detected on an X-ray diffraction chart, (1) carbon is dissolved in a crystal phase of a compound constituting a ceramic to cause carbon. A method for preventing the peak of X-ray diffraction from appearing, (2) a method using amorphous carbon, and the like can be considered.

Of these, the method (2) using amorphous carbon is preferred. The reason for this is that if carbon is dissolved in the ceramic sintered body, defects are likely to be generated in the crystal, and as a result, the strength of the sintered body at a high temperature is reduced.

In Japanese Patent Application Laid-Open No. 9-48668,
When heating at 1850 ° C., crystalline carbon is dissolved in aluminum nitride and the peak of X-ray diffraction disappears. However, Japanese Patent Application Laid-Open No. 9-48668 describes that the peak of X-ray diffraction is merely 44. The present invention recognizes that there exists an angle of about 45 ° as an invention, and as described in the present invention, the concept of having both a carbon whose peak can be detected and a carbon whose peak cannot be detected on an X-ray diffraction chart is described. Nor is it suggested.
No. 48668 does not hinder the novelty and inventive step of the present invention.

However, when amorphous carbon is added to aluminum nitride, there arises a problem that the thermal conductivity at high temperatures decreases. It is presumed that this is probably because amorphous carbon intervenes at the particle interface and acts as a barrier that hinders the propagation of heat. Therefore, as described above, when adding amorphous carbon, the present inventors have found that crystalline carbon having a crystal structure similar to that of a metal crystal and having a low thermal conductivity at high temperatures is hardly reduced. Decided to coexist.

As described above, when two types of carbon are contained, the volume resistivity at a high temperature is at least 10 ⁸ Ω · cm and the thermal conductivity at a high temperature is 60 W / m · k or more. Thus, the problem of adding amorphous carbon alone can be overcome.

In the present invention, the mixing ratio of carbon whose peak is not detected or below the detection limit in the X-ray diffraction chart and carbon whose peak can be detected is preferably in the range of 1/200 to 200/1 by weight ratio. And it is optimal to adjust the ratio to 1/100 to 100/1.

The ratio of carbon can be measured by laser Raman analysis. In the laser Raman analysis, the peak of crystalline carbon (Raman shift: 1580 cm)
^-1 ) and the amorphous carbon peak (Raman shift: 13)
Since 55 cm ^-1 ) appears separately, the mixing ratio can be determined from the ratio of the peak heights of the two. In addition, a crystalline carbon having a known concentration is added to the ceramic, X-ray diffraction analysis is performed, and the relationship between the concentration of each carbon and the peak height (more precisely, the area) is obtained as a calibration curve. On the other hand, the CO _X gas concentration such as CO or CO ₂ generated by baking the total carbon concentration of the sample to be measured at 500 to 800 ° C. is measured, and the sample to be measured is subjected to X-ray diffraction analysis. To determine the amount of carbon that can be detected by X-ray diffraction from the obtained peak height (more precisely, the area), and determine the difference between the total amount of carbon and the amount of carbon that can be detected by X-ray diffraction. Carbon that cannot be detected by diffraction can also be defined. However, the total amount of both carbons added is 200 to
5000 ppm is desirable, and 200 to 200
More preferably, it is 0 ppm. If it is less than 200 ppm, it cannot be said that it is black, and the lightness exceeds N4. On the other hand, if the addition amount exceeds 5000 ppm, the sinterability of the aluminum nitride decreases.

The ceramic material constituting the ceramic substrate for a semiconductor device of the present invention is not particularly limited.
For example, nitride ceramics, carbide ceramics, oxide ceramics and the like can be mentioned.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like. Further, as the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tansten carbide.

Examples of the oxide ceramic include metal oxide ceramics such as alumina, zirconia, cordierite, and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Also, among nitride ceramics, aluminum nitride is most preferred. This is because the thermal conductivity is the highest at 180 W / m · K.

In the present invention, it is preferable that the sintered body constituting the matrix contains a sintering aid.
As the sintering aid, alkali metal oxides, alkaline earth metal oxides, rare earth oxides can be used,
Among these sintering aids, CaO, Y ₂ O ₃ ,
_{Na 2 0, Li 2 0,} Rb 2 0 3 are preferred. The content of these is desirably 0.1 to 10% by weight.

It is preferable that the ceramic substrate for a semiconductor device according to the present invention has a brightness of N4 or less as a value based on the specification of JIS Z 8721. This is because a material having such a lightness is excellent in radiant heat and concealing property. Here, the lightness N is defined as an ideal black lightness of 0,
The ideal white lightness is assumed to be 10, and each color is divided into 10 between the black lightness and the white lightness so that the perception of the brightness of the color becomes equal, and the symbols N0 to N10 are used. It is displayed. The actual measurement is performed by comparing the color charts corresponding to N0 to N10. In this case, the first decimal place is 0
Or it is set to 5.

The ceramic substrate for a semiconductor device of the present invention comprises:
A ceramic substrate used in an apparatus for manufacturing a semiconductor or inspecting a semiconductor. Specific examples of the apparatus include an electrostatic chuck, a wafer prober, a hot plate, and a susceptor.

A conductor made of a conductive metal or a conductive ceramic is provided on the ceramic substrate for a semiconductor device of the present invention. When the conductor is an electrostatic electrode, the ceramic substrate is used. Function as an electrostatic chuck.

Examples of the metal include noble metals (gold,
Silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferred. Examples of the conductive ceramic include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more.

FIG. 5A is a longitudinal sectional view schematically showing an electrostatic chuck, and FIG. 5B is a sectional view taken along line AA of the electrostatic chuck shown in FIG. In the electrostatic chuck 20, chuck positive / negative electrode layers 22, 23 are embedded in the aluminum nitride substrate 3, and a ceramic dielectric film 40 is formed on the electrodes. Further, a resistance heating element 11 is provided inside the aluminum nitride substrate 3 so that the silicon wafer 9 can be heated. The aluminum nitride substrate 3 may have an RF
Electrodes may be embedded.

When this electrostatic chuck is used, the positive and negative sides of a DC power supply are connected to the chuck positive electrostatic layer 22 and the chuck negative electrostatic layer 23, respectively, and a DC voltage is applied. As a result, the silicon wafer placed on the electrostatic chuck is electrostatically attracted. Therefore, if a resistance heating element is formed in the electrostatic chuck, heating or the like can be performed in a state where the silicon wafer is sucked.

FIGS. 6 and 7 are horizontal sectional views schematically showing electrostatic electrodes in another electrostatic chuck.
In the electrostatic chuck 70 shown in FIG. 7, a semicircular chuck positive electrode electrostatic layer 72 and a chuck negative electrode electrostatic layer 73 are formed inside a ceramic substrate 71. In the electrostatic chuck 80 shown in FIG. Are formed with chuck positive electrode electrostatic layers 82a and 82b and chuck negative electrode electrostatic layers 83a and 83b each having a shape obtained by dividing a circle into four parts. Further, the two positive electrode electrostatic layers 82a and 82b and the two chuck negative electrode electrostatic layers 83a and 83b are formed to cross each other. In the case of forming an electrode in which a circular electrode or the like is divided, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector.

When the conductor embedded in the ceramic substrate for a semiconductor device of the present invention is a resistance heating element, the ceramic substrate functions as a hot plate. FIG.
FIG. 9 is a bottom view schematically illustrating an example of a hot plate (hereinafter, also referred to as a ceramic heater) which is an embodiment of the ceramic substrate for a semiconductor device of the present invention. FIG. 9 is a schematic diagram illustrating a part of the ceramic heater. It is a partial expanded sectional view shown typically.

The ceramic substrate 91 is formed in a disk shape, and the resistance heating element 92 is heated so that the entire temperature of the wafer mounting surface of the ceramic substrate 91 becomes uniform. Are formed in a concentric pattern, and a metal coating layer 92a is formed on the surface thereof.

Further, these resistance heating elements 92 are connected so that double concentric circles close to each other form a single line, and have terminal pins 9 serving as input / output terminals at both ends.
3 are connected. A through hole 95 for inserting a support pin 96 is formed in a portion near the center, and a bottomed hole 94 for inserting a temperature measuring element is formed.

As shown in FIG. 9, the support pins 96 can be mounted on the silicon wafer 99 and can be moved up and down, so that the silicon wafer 99 is not shown. The wafer can be transferred to the transfer device, or the silicon wafer 99 can be received from the transfer device. The resistance heating element 92 shown in FIG.
Although disposed on the bottom surface of the substrate 1, the resistance heating element 92 may be formed inside the ceramic substrate 91 or at a position eccentric to the wafer mounting surface from the center.

In the ceramic heater having such a configuration,
After placing the silicon wafer 99 or the like thereon, the silicon wafer 99 or the like can be heated to a desired temperature when performing various operations.

When a conductor is provided on the surface and inside of the ceramic substrate for a semiconductor device of the present invention, and the inside conductor is at least one of a guard electrode and a ground electrode, the ceramic substrate Function as a wafer prober.

FIG. 10 is a cross-sectional view schematically showing an example of a wafer prober which is an embodiment of the ceramic substrate for a semiconductor device according to the present invention. FIG. 11 is a plan view thereof, and FIG. FIG. 11 is a sectional view taken along line AA of the wafer prober shown in FIG. 10.

In the wafer prober 101, concentric grooves 7 are formed on the surface of the ceramic substrate 3 having a circular shape in plan view, and a plurality of suction holes 8 for sucking a silicon wafer are formed in a part of the grooves 7. The chuck top conductor layer 2 for connection with the electrode of the silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 7.

On the other hand, on the bottom surface of the ceramic substrate 3, heating elements 41 having a concentric circular shape in plan view as shown in FIG. 8 are provided for controlling the temperature of the silicon wafer. Are connected and fixed to external terminal pins 191 (see FIG. 14). Further, a guard electrode 5 and a ground electrode 6 having a lattice shape as shown in FIG. 12 are provided inside the ceramic substrate 3 to remove stray capacitors and noise.

In such a wafer prober, after a silicon wafer having an integrated circuit formed thereon is mounted thereon, a probe card having tester pins is pressed against the silicon wafer, and a voltage is applied while heating and cooling. To conduct a continuity test.

Next, an example of a method for manufacturing a ceramic substrate for a semiconductor device according to the present invention will be described. (1) First, an amorphous carbon is produced. For example, C,
A pure amorphous carbon is produced by calcining a hydrocarbon consisting of only H and O, preferably a saccharide (sucrose or cellulose) at 300 to 500 ° C in air. On the other hand, for crystalline carbon, general graphite, carbon black, and the like can be used.

(2) Next, the carbon and the ceramic powder to be a matrix component are mixed. The preferred size of the powder to be mixed is as small as about 0.1 to 5 μm in average particle size. This is because the finer the particle, the better the sinterability. The amount of carbon to be added is determined in consideration of the amount that disappears during firing. Further, the above mixture further contains the above-described yttrium oxide (yttria: Y ₂ O ₃ ).
Is added.

Instead of the above treatments (1) and (2), green sheets are prepared by mixing a ceramic powder, a binder, a saccharide and a solvent, and then laminated, and the laminate of the green sheets is heated at 300 to 500 ° C. By calcination, the saccharide may be converted to amorphous carbon. In this case, both saccharides and amorphous carbon may be added. In addition, as a solvent, α-terpineol, glycol, or the like can be used.

(3) Next, the obtained powder mixture was put into a molding die to form a molded product, or the above-mentioned green sheet laminate (both were preliminarily calcined) was subjected to an inert gas such as argon nitrogen. 1700-1900 ° C, 80
It is heated and pressed under the condition of 条件 200 kg / cm ² for sintering.

The ceramic substrate for a semiconductor device of the present invention comprises:
Basically, it can be manufactured by firing a green body or a green sheet laminate made of a mixture of ceramic powders. When this ceramic powder mixture is put into a molding die, a metal plate (foil) that becomes a heating element By embedding metal wires or the like in a powder mixture, or by forming a conductor paste layer serving as a heating element on one of the green sheets to be laminated, a ceramic substrate having a resistance heating element therein and can do. Further, after the sintered body is manufactured, a heating element can be formed on the bottom surface by forming a conductor paste layer on the surface (bottom surface) and baking the paste.

Further, at the time of manufacturing the ceramic substrate, a metal plate (foil) or the like is buried inside the molded body so as to have the shape of an electrode such as an electrostatic chuck in addition to the heating element, or a green sheet is formed. By forming a conductive paste layer on a substrate, a hot plate, an electrostatic chuck, a wafer prober, a susceptor, and the like can be manufactured.

The conductive paste for producing various electrodes and heating elements is not particularly limited, but contains metal particles or conductive ceramics for securing conductivity, as well as resins, solvents, and thickeners. And the like are preferred.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. These metals are relatively hard to be oxidized, and have a sufficiently large conductivity when formed into a thin-film electrode or the like. On the other hand, a linear (strip-shaped) resistance heating element as shown in FIG. In this case, the resistance value is sufficient to generate heat. Examples of the conductive ceramic include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more.

The metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 μm. 0.1μ
If the particle size is too small, it is easily oxidized.
If the thickness exceeds μm, sintering becomes difficult and the resistance value increases.

Although the shape of the metal particles is spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes. When the metal particles are scaly, or a mixture of spherical and scaly, it is easy to hold the metal oxide between the metal particles and ensure the adhesion between the heating element and the ceramic substrate. This is advantageous because the resistance value can be increased.

As the resin used for the conductor paste,
For example, an epoxy resin, a phenol resin, and the like can be given. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

When the conductor paste for the heating element is formed on the surface of the ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is desirable to do. in this way,
By sintering metal oxide with metal particles,
The ceramic substrate and the metal particles can be brought into close contact.

Although it is not clear why the adhesion to the ceramic substrate is improved by mixing the metal oxide,
The surface of the metal substrate or the surface of the ceramic substrate made of a non-oxide is slightly oxidized to form an oxide film. It is considered that the particles and the ceramic may adhere to each other. Further, when the ceramic constituting the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

As the metal oxide, for example, oxidized
Lead, zinc oxide, silica, boron oxide (B ₂O₃), Al
Selected from the group consisting of Mina, Yttria and Titania
At least one is preferred.

This is because these oxides can improve the adhesion between the metal particles and the ceramic substrate without increasing the resistance value of the heating element.

The ratio of the above-mentioned lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is as follows: 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1
-10, yttria 1-50, titania 1-50, and the total is preferably adjusted within a range not exceeding 100 parts by weight. By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

The amount of the metal oxide added to the metal particles is preferably 0.1% by weight or more and less than 10% by weight. The area resistivity when the heating element is formed using the conductor paste having such a configuration is preferably from 1 to 45 mΩ / □.

If the sheet resistivity exceeds 45 mΩ / □, the heat generation becomes too large with respect to the applied voltage, and it is difficult to control the heat generation in a ceramic substrate provided with a heating element on the surface. If the addition amount of the metal oxide is 10% by weight or more, the sheet resistivity exceeds 50 mΩ / □, the calorific value becomes too large, the temperature control becomes difficult, and the uniformity of the temperature distribution decreases. .

When the heating element is formed on the surface of the ceramic substrate, it is desirable that a metal coating layer is formed on the surface of the heating element. This is to prevent the internal metal sintered body from being oxidized to change the resistance value. The thickness of the metal coating layer to be formed is preferably 0.1 to 10 μm.

The metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples thereof include gold, silver, palladium, platinum and nickel. . These may be used alone or 2
More than one species may be used in combination. Of these, nickel is preferred. In the case where the heating element is formed inside the ceramic substrate, the surface of the heating element is not oxidized, and thus no coating is required. Further, when forming a metal layer on the surface of the ceramic substrate, or when forming a coating layer on the metal layer, in addition to the above-described application of the conductor paste,
Physical vapor deposition means such as sputtering and chemical coating means such as plating can be used. The ceramic substrate for a semiconductor device of the present invention can be used at 200 ° C. or higher.

[0066]

EXAMPLES (Example 1) Ceramic heater (AlN +
(Y ₂ O ₃ + Amorphous carbon + Graphite) (1) Sucrose was heated to 500 ° C. in an oxidizing air stream (in air) to be thermally decomposed to obtain amorphous carbon. (2) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O
₃ : 4 parts by weight of yttria, average particle diameter 0.4 μm), 0.04 part by weight of the amorphous carbon of the above (1), and 0.05 of crystalline graphite powder (GR-1200, manufactured by Toyo Carbon Co., Ltd.)
Parts by weight, and put into a mold, and in a nitrogen atmosphere, 189 parts by weight.
Hot pressing was performed at 0 ° C. under a pressure of 150 kg / cm ² for 3 hours to obtain an aluminum nitride sintered body. (3) Next, a conductor paste was printed on the bottom surface of the sintered body obtained in the above (2) by screen printing. The printing pattern was a concentric pattern as shown in FIG. As the conductive paste, Solvest PS manufactured by Tokuriki Chemical Laboratory, which is used to form through holes in printed wiring boards
603D was used.

This conductor paste is a silver-lead paste, and based on 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight). % By weight) and 7.5% by weight of a metal oxide composed of alumina (5% by weight). Also,
The silver particles had a mean particle size of 4.5 μm and were scaly.

(4) Next, the sintered body on which the conductor paste has been printed is heated and fired at 780 ° C. to obtain silver in the conductor paste,
The lead is sintered and baked on the sintered body.
Was formed. The silver-lead heating element 92 had a thickness of 5 μm, a width of 2.4 mm, and a sheet resistivity of 7.7 mΩ / □. (5) Nickel sulfate 80 g / l, sodium hypophosphite 24 g / l, sodium acetate 12 g / l, boric acid 8 g / l
1) The sintered body prepared in the above (4) is immersed in an electroless nickel plating bath comprising an aqueous solution containing 6 g / l of ammonium chloride, and a 1 μm thick metal coating layer 92 a is formed on the surface of the silver-lead heating element 92. (Nickel layer) was deposited.

(6) A silver-lead solder paste (manufactured by Tanaka Kikinzoku) was printed by screen printing on a portion where a terminal for securing connection to a power supply was to be formed, to form a solder layer. Next, the terminal pins 93 made of Kovar were placed on the solder layer, and heated and reflowed at 420 ° C. to attach the terminal pins 93 to the surface of the heating element 92. (7) A thermocouple for temperature control was inserted into the bottomed hole, filled with a polyimide resin, and cured at 190 ° C. for 2 hours to obtain a ceramic heater 10 (see FIG. 8).

The amount of carbon in the sintered body was measured by pulverizing the sintered body and heating it at 500 to 800 ° C. to collect the generated CO _X gas. As a result of measurement by this method, the amount of carbon contained in the aluminum nitride sintered body was 800 ppm. The brightness is N
= 3.5.

(Example 2) Ceramic heater (AlN)
(+ Amorphous carbon + Graphite) (1) Sucrose was heated to 500 ° C. in the air and thermally decomposed to obtain amorphous carbon. (2) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), 0.06 parts by weight of the amorphous carbon of the above (1), and crystalline graphite powder (GR-1200 manufactured by Toyo Carbon Co., Ltd.) ) 0.03 parts by weight were mixed, put in a mold, and put in a nitrogen atmosphere at 1890 ° C. under a pressure of 150 kg.
/ Cm ² for 3 hours to obtain an aluminum nitride sintered body. Thereafter, a resistance heating element 92 was provided on the bottom surface of the sintered body in the same manner as in Example 1. The total amount of carbon in the obtained aluminum nitride sintered body is 810 ppm
And the lightness was N = 3.5.

(Example 3) Ceramic heater (solid solution of carbon) The sintered body of Example 1 was heated at 1850 ° C in a nitrogen atmosphere at normal pressure for 1 hour.
By heating for a time, part of the carbon was dissolved in the aluminum nitride phase. Thereafter, a resistance heating element 92 was provided on the bottom surface of the sintered body in the same manner as in Example 1.

It is considered that there is no solid solution of carbon during hot pressing. FIG. 16 shows the results of measuring the strength of the sintered bodies constituting the ceramic substrates for semiconductor devices of Examples 1 and 3. As shown in FIG. 16, the strength of the ceramic substrate for a semiconductor device (Example 3) in which a part of carbon is dissolved in the crystal phase is observed.
Therefore, it is considered that it is more advantageous to use amorphous carbon than to form a solid solution.

The strength was measured using an Instron universal tester (type 4507 load cell 500 kgf) in the air at a temperature of 25 to 1000 ° C. and a crosshead speed of 0.5 m.
m / min, span distance L = 30 mm, specimen thickness t =
The measurement was performed at 3.06 mm and width w = 4.03 mm, and the three-point bending strength σ (kgf / mm ² ) was calculated using the following equation (1).

[0075]

(Equation 1)

In the above formula (1), P is the maximum load (kgf) when the test piece breaks, L is the distance between the lower supports (30 mm), and t is the thickness of the test piece. Sa (m
m) and w is the width (mm) of the test piece.

(Comparative Example 1) Ceramic heater (AlN
+ Y ₂ O ₃ ) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1)
μm) of 100 parts by weight and 4 parts by weight of yttrium oxide (Y ₂ O ₃ : average particle diameter 0.4 μm) are mixed, put into a mold, and placed in a nitrogen atmosphere at 1890 ° C. under a pressure of 150 kg / c.
Hot pressing was performed for 3 hours under the conditions of m ² to obtain an aluminum nitride sintered body. Thereafter, a resistance heating element 92 was provided on the bottom surface of the sintered body in the same manner as in Example 1. The amount of carbon in the obtained aluminum nitride sintered body was 100 ppm or less, and the lightness was N = 7.0.

Comparative Example 2 Ceramic heater (AlN)
+ Crystalline carbon) In this comparative example, a phenol resin powder was used as a binder according to the description in JP-A-9-48668.
In this prior art, the carbon obtained by decomposing the phenol resin and the acrylic binder is crystalline.

First, 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Co., average particle size 1.1 μm) and 5 parts by weight of phenol resin powder are mixed, put into a mold, and placed in a nitrogen atmosphere at 1890 ° C. under a pressure of 150 kg / cm. ^Under the conditions of ² , hot pressing was performed for 3 hours to obtain an aluminum nitride sintered body. Thereafter, a resistance heating element 92 was provided on the bottom surface of the sintered body in the same manner as in Example 1. The amount of carbon in the obtained aluminum nitride sintered body was 800 ppm.

Comparative Example 3 Ceramic heater (AlN)
+ Amorphous carbon) (1) Sucrose was heated in air at 500 ° C. and thermally decomposed to obtain amorphous carbon. (2) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O
₃ : 4 parts by weight of an average particle diameter of 0.4 μm) and 0.09 parts by weight of the amorphous carbon of the above (1) were mixed, put into a mold, and placed in a nitrogen atmosphere at 1890 ° C. under a pressure of 150 kg / cm.
^Under the conditions of ² , hot pressing was performed for 3 hours to obtain an aluminum nitride sintered body. The amount of carbon in the obtained aluminum nitride sintered body was 805 ppm, and the lightness was N = 4.0.

FIG. 1 shows Examples 1 to 3 and Comparative Examples 1 to 3.
For the sintered body constituting the ceramic heater of
It shows a change in volume resistivity up to 500 ° C. As shown in FIG. 1, in the case of the ceramic heater containing only crystalline carbon shown as Comparative Example 2, the volume resistivity of the sintered body was reduced to about 1/10,
When heated to ° C., the leakage current exceeded 10 mA, making it impractical.

FIG. 2 shows the temperature dependency of the thermal conductivity of the sintered body. In the case of the ceramic substrate for a semiconductor manufacturing / inspection apparatus containing only amorphous carbon shown in Comparative Example 3, FIG. The thermal conductivity dropped to 40 W / m · K. FIG. 3 is an X-ray diffraction chart of a sintered body constituting the ceramic substrate for a semiconductor device of Example 1, and FIG.
5 is an X-ray diffraction chart of the sintered body obtained in Comparative Example 3. FIG. 4 is an X-ray diffraction chart of the sintered body obtained in Comparative Example 2. In Example 1 (FIG. 3), since crystalline carbon was used, a peak derived from crystalline carbon could be observed, while Comparative Example 3 was used.
In FIG. 15, since amorphous carbon is used, a peak derived from a substance other than the aluminum nitride crystal cannot be observed.

The ceramic substrates (ceramic heaters) for semiconductor devices of Examples 1 to 3 and Comparative Examples 1 to 3 were energized and heated to 500 ° C., and the surface temperature was adjusted to a thermoviewer (IR 162012 manufactured by Nippon Datum Co., Ltd.). 0
012), measured with a JIS-C-1602 (1980) K-type thermocouple, and the temperature difference between the two was determined. It can be said that the larger the deviation from the temperature measured by the thermocouple, the larger the temperature error of the thermoviewer. As a result, the temperature difference was 0.8 ° C. in Example 1, 0.9 ° C. in Example 2, 1 ° C. in Example 3, 8 ° C. in Comparative Example 1, and 0 ° C. in Comparative Example 2. 0.8 ° C., and the temperature difference in Comparative Example 3 was 0.9 ° C.

In the above measurement, the volume resistivity and the thermal conductivity were measured as follows. (1) Volume resistivity: cutting a sintered body into a shape having a diameter of 10 mm and a thickness of 3 mm by cutting, forming three terminals (main electrode, counter electrode, guard electrode) and applying a DC voltage;
After reading the current (I) flowing through the digital electrometer after charging for 1 minute, the resistance (R) of the sample is obtained, and the volume resistivity (ρ) is calculated from the resistance (R) and the dimensions of the sample by the following formula (2). ).

[0085]

(Equation 2)

In the above formula (2), t is the thickness of the sample. S is given by the following equations (3) and (4).

[0087]

(Equation 3)

[0088]

(Equation 4)

In the above formulas (3) and (4), r ₁ is the radius of the main electrode, r ₂ is the inner diameter (radius) of the guard electrode, r ₃ is the outer diameter (radius) of the guard electrode, and D ₁ the main electrode diameter, _{D 2} is the guard electrode inner diameter (diameter), _{D 3} is the outer diameter of the guard electrode (diameter), in this _{embodiment, 2r 1 = D 1 = 1.45cm} , 2r 2 = D ₂ = 1.
60 cm, 2r ₃ = D ₃ = 2.00 cm.

(2) Thermal conductivity: a. Equipment used Rigaku laser flash method thermal constant measurement device LF / TCM-FA8510B b. Test conditions Temperature: room temperature, 200 ° C, 400 ° C, 500 ° C, 70
0 ° C atmosphere ... vacuum c. Measurement method-Temperature detection in the specific heat measurement was performed by a thermocouple (platinel) bonded to the back surface of the sample with a silver paste. The room temperature specific heat measurement was further performed with a light receiving plate (glassy carbon) adhered to the upper surface of the sample via silicon grease, and the specific heat (Cp) of the sample was determined by the following calculation formula (5).

[0091]

(Equation 5)

In the above equation (5), ΔO is the input energy, ΔT is the saturation value of the temperature rise of the sample, Cp
_Gc is the specific heat of glassy carbon, W _Gc is the weight of glassy carbon, Cp _SG is the specific heat of silicon grease, W _SG is the weight of silicon grease, and W is the weight of the sample.

(Embodiment 4) Wafer prober (FIG. 13 to FIG. 13)
14) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttria (average particle size: 0.1 μm)
4 μm) A composition obtained by mixing 4 parts by weight, 0.05 parts by weight of the amorphous carbon obtained in Example 1, 0.05 parts by weight of graphite powder, and 53 parts by weight of an alcohol consisting of 1-butanol and ethanol was mixed with a doctor. The green sheet 30 having a thickness of 0.47 mm was obtained by molding using a blade method. (2) After drying the green sheet 30 at 80 ° C. for 5 hours, punching was performed to provide through holes for through holes for connecting the heating element to external terminal pins.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, and an acrylic binder 3.0
By weight, 3.5 parts by weight of an α-terpineol solvent and 0.3 parts by weight of a dispersant were mixed to prepare a conductive paste A.
Further, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant were mixed to prepare a conductive paste B. .

(4) The conductive paste A was printed on the surface of the green sheet 30 by a screen printing method to form a grid-shaped guard electrode print layer 50 and a ground electrode print layer 60. In addition, the conductive paste B was filled in the through-hole for through-hole for connecting to the external terminal connecting pin, thereby forming through-hole filling layers 160 and 170. Then, the green sheet 30 on which the conductive paste is printed and the green sheet 3 on which no printing is performed
Fifty sheets of 0 ′ were laminated and integrated at 130 ° C. under a pressure of 80 kg / cm ² (FIG. 13A). (5) Degreasing the integrated laminate at 600 ° C. for 5 hours,
Thereafter, hot pressing was performed at 1890 ° C. and a pressure of 150 kg / cm ² for 3 hours to obtain an aluminum nitride plate having a thickness of 3 mm. This plate was cut into a circular shape having a diameter of 230 mm to form an aluminum nitride substrate 3 (FIG. 13).
(B)). The size of the through holes 16 and 17 was 0.2 mm in diameter and 0.2 mm in depth. The thickness of the guard electrode 5 and the ground electrode 6 is 10 μm, and the formation position of the guard electrode 5 in the sintered body thickness direction is 1 mm from the heating element, while the formation of the ground electrode 6 in the sintered body thickness direction is performed. The position was 1.2 mm from the chuck surface 1a.

(6) The aluminum nitride substrate 3 obtained in the above (4) is polished with a diamond grindstone, a mask is placed on the substrate, and the surface is blasted with glass beads to form a thermocouple mounting recess (not shown). ) And a groove 7 (width 0.5 mm, depth 0.5 mm) for wafer suction (FIG. 1).
3 (c)). (7) Further, a conductive paste was printed on the back surface opposite to the chuck surface 1a in which the groove 7 was formed to form a paste layer for a heating element. As the conductive paste, Solvest PS603D manufactured by Tokuri Chemical Laboratory, which is used for forming through holes in a printed wiring board, was used. That is, this conductive paste is a silver / lead paste, and a metal oxide composed of lead oxide, zinc oxide, silica, boron oxide, and alumina (the weight ratio of each is 5/55/10/25 /
5) is contained in an amount of 7.5% by weight based on the amount of silver. The silver in the conductive paste has an average particle size of 4.
A 5 μm scale was used.

(8) Aluminum nitride substrate (heater plate) having a heating element 41 formed by printing a conductive paste on the back surface
3 was heated and fired at 780 ° C. to sinter silver and lead in the conductive paste and baked the aluminum paste on the aluminum nitride substrate 3 to form a heating element 41 (FIG. 13D). Then
This aluminum nitride substrate 3 was treated with 30 g of nickel sulfate /
1, boric acid 30 g / l, ammonium chloride 30 g / l,
It is immersed in an electroless nickel plating bath made of an aqueous solution containing 60 g / l of Rochelle salt, and further has a thickness of 1 μm and a boron content of 1% by weight or less on the surface of the heating element 41 made of the conductive paste. The heating element 41 was thickened by depositing a nickel layer 410, and then heat-treated at 120 ° C. for 3 hours. Nickel layer 410 thus obtained
The heating element 41 including the above has a thickness of 5 μm, a width of 2.4 mm, and a sheet resistivity of 7.7 mΩ / □.

(9) Chuck surface 1a with groove 7 formed
Then, each layer of Ti, Mo, and Ni was sequentially laminated by a sputtering method. This sputtering uses SV-4540 manufactured by Japan Vacuum Engineering Co., Ltd.
6 Pa, temperature: 100 ° C., power: 200 W, processing time:
Performed under the conditions of 30 seconds to 1 minute, the sputtering time is
It adjusted according to each metal to be sputtered. The obtained film had a Ti of 0.3 μm, M
o was 2 μm and Ni was 1 μm.

(10) The aluminum nitride substrate 3 obtained in the above (9) was treated with 30 g / l of nickel sulfate and 30 g of boric acid.
g / l, ammonium chloride 30 g / l, Rochelle salt 6
A nickel layer having a boron content of 1% by weight or less (thickness: 7 μm) was immersed in an electroless nickel plating bath composed of an aqueous solution containing 0 g / l to form a groove 7 formed on the chuck surface 1a. Precipitated and heat treated at 120 ° C. for 3 hours.
Further, an electroless gold plating solution composed of potassium gold cyanide 2 g / l, ammonium chloride 75 g / l, sodium citrate 50 g / l, and sodium hypophosphite 10 g / l on the surface (chuck surface side) of the aluminum nitride substrate 3. To 9
The aluminum nitride substrate 3 was immersed for 1 minute at 3 ° C.
On the nickel plating layer on the chuck side of
A chuck top conductor layer 2 was formed by laminating a gold plating layer of μm (FIG. 14E). (11) Next, the air suction hole 8 that escapes from the groove 7 to the back surface is drilled and drilled.
The bag hole 180 for exposing the
(F)). A Ni-Au alloy (Au8
1.5 wt%, Ni 18.4 wt%, impurities 0.1 wt%
%), And heated and reflowed at 970 ° C. to connect the external terminal pins 19 and 190 made of Kovar (FIG. 14 (g)). The external terminal pins 19 made of Kovar are connected to the heating element 41 via a solder alloy (tin 9 / lead 1).
1 was formed. (12) In order to control the temperature, a plurality of thermocouples were embedded in the recesses (not shown) to provide a heater with a wafer prober.

(13) Thereafter, usually, the heater with the wafer prober is usually fixed on a stainless steel support base via a heat insulating material made of ceramic fiber (manufactured by IBIDEN, trade name: IBIWOOL). A cooling gas injection nozzle is provided on the upper side to adjust the temperature of the wafer prober. The heater with a wafer prober sucks air from the air suction holes 8 to suck and support a wafer placed on the heater. The heater with a wafer prober manufactured in this manner has a brightness of N =
3.5, the amount of radiation heat is large, and the guard electrode 2 and the ground electrode 3 inside are excellent in concealment.

Example 5 Ceramic Heater Having Heating Element and Electrostatic Electrode for Electrostatic Chuck Inside (FIG. 5) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm); Yttria (average particle size:
0.4 μm) 4 parts by weight, 0.05 parts by weight of amorphous carbon obtained in Example 1, 0.05 parts of crystalline graphite powder
Using a paste obtained by mixing 0.5 parts by weight of a dispersant and 53 parts by weight of alcohol composed of 1-butanol and ethanol, molding was performed by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm. .

(2) Next, this green sheet is dried at 80 ° C. for 5 hours, and then punched to form a through hole for inserting a 5.0 mm semiconductor wafer support pin, and a through hole for connecting to an external terminal. A part to be a hole was provided.

(3) 100 parts by weight of tungsten carbide particles having an average particle size of 1 μm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of an α-terpineol solvent, and 0.3 part by weight of a dispersant were mixed to form a conductor. Paste A was prepared.
A conductive paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant. The conductive paste A was printed on a green sheet by screen printing to form a conductive paste layer. The printing pattern was a concentric pattern.
Further, a conductor paste layer composed of an electrostatic electrode pattern having the shape shown in FIG. 5 was formed on another green sheet.

Further, the conductive paste B was filled in through holes for through holes for connecting external terminals. On top of the green sheet after the above processing, a green sheet on which the tungsten paste is not printed is placed on the upper side (heating surface).
37 sheets, 13 sheets below, 130 ° C, 80 kg / cm ²
The layers were laminated under the following pressure.

(4) Next, the obtained laminate is placed in nitrogen gas.
Degreasing at 600 ° C for 5 hours, 1890 ° C, pressure 150kg
/ Cm ² for 3 hours to obtain an aluminum nitride plate having a thickness of 3 mm. This was cut out into a disk shape of 230 mm to obtain a plate-shaped body made of aluminum nitride having a heating element having a thickness of 6 μm and a width of 10 mm and an electrostatic electrode therein. The obtained sintered body had a carbon content of 850 ppm.

(5) Next, the plate-like body obtained in (4) is polished with a diamond grindstone, a mask is placed thereon, and blast processing with SiC or the like is performed on the surface to form a bottomed hole for a thermocouple. (Diameter: 1.2 mm, depth: 2.0 mm).

(6) Further, a part of the through-hole for the through-hole is cut out to form a concave portion, and a Ni-Au gold solder is used in the concave portion, and reflow is performed at 700 ° C. to form an external terminal made of Kovar. Connected. The connection of the external terminals is desirably a structure in which a tungsten support is supported at three points. This is because connection reliability can be ensured.

(8) Next, a plurality of thermocouples for temperature control were embedded in the bottomed holes, and the manufacture of the ceramic heater with the electrostatic chuck was completed. The heater with the electrostatic chuck manufactured in this way has a brightness of N = 3.5, has a large amount of radiant heat, and is excellent in concealment of the internal resistance heating element and the electrostatic electrode.

(Embodiments 6 and 7) In this embodiment, a semiconductor manufacturing / inspection apparatus was manufactured in the same manner as in Embodiment 1 except that the ratio of amorphous carbon to crystalline carbon was changed as shown in Table 1 below. A ceramic substrate was obtained. Then, the volume resistivity (Ω · cm) and the thermal conductivity (W / m · K) at 400 ° C. were measured, and the carbon amount was measured.

[0110]

[Table 1]

As is clear from the results shown in Table 1, the ceramic substrate for a semiconductor manufacturing / inspection apparatus has the following characteristics.
Both the volume resistivity and the thermal conductivity have sufficiently good values.

[0112]

As described above, the ceramic substrate for a semiconductor manufacturing / inspection apparatus according to the present invention has two complementary shapes.
Contains carbon of various kinds and contains a sintering aid, so it has excellent electrode pattern concealing properties and temperature measurement accuracy with a thermoviewer, and also has excellent volume resistivity and thermal conductivity at high temperatures and lightness Low ceramic substrate. Therefore, the ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention is useful as, for example, a substrate for a hot plate, an electrostatic chuck, a wafer prober, a susceptor and the like.

[Brief description of the drawings]

FIG. 1 is a graph showing a relationship between a ceramic substrate component and a volume resistivity constituting a ceramic substrate for a semiconductor manufacturing / inspection apparatus of an example and a comparative example.

FIG. 2 is a graph showing the influence of the thermal conductivity of a sintered body constituting a ceramic substrate for a semiconductor manufacturing / inspection apparatus of an example and a comparative example.

FIG. 3 is an X-ray diffraction chart of a sintered body constituting a ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention.

4 is an X-ray diffraction chart of a sintered body obtained in Comparative Example 2. FIG.

FIG. 5A is a longitudinal sectional view schematically showing an electrostatic chuck, and FIG. 5B is a vertical sectional view of the electrostatic chuck shown in FIG.
FIG. 4 is a cross-sectional view taken along a line A.

FIG. 6 is a horizontal cross-sectional view schematically showing another example of the electrostatic electrode embedded in the electrostatic chuck.

FIG. 7 is a horizontal sectional view schematically showing still another example of the electrostatic electrode embedded in the electrostatic chuck.

FIG. 8 is a bottom view schematically showing a ceramic heater which is an example of a ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention.

9 is a partially enlarged cross-sectional view schematically showing the ceramic heater shown in FIG.

FIG. 10 is a cross-sectional view schematically showing a wafer prober which is an example of a ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention.

11 is a plan view schematically showing the wafer prober shown in FIG.

FIG. 12 is a sectional view taken along line AA of the wafer prober shown in FIG. 10;

13 is an explanatory diagram of a manufacturing process of the wafer prober shown in FIG.

14 is an explanatory diagram of a manufacturing process of the wafer prober shown in FIG.

FIG. 15 is an X-ray diffraction chart of a sintered body obtained in Comparative Example 3.

FIG. 16 is a graph showing the temperature dependence of the bending strength of the sintered bodies constituting the ceramic substrates for semiconductor manufacturing / inspection devices of the example and the comparative example.

[Explanation of symbols]

 2 chuck top conductor layer 3 ceramic substrate 5 guard electrode 6 ground electrode 7 groove 8 air suction hole 16, 17 through hole 19, 190, 191 external terminal pin 20, 70, 80 electrostatic chuck 21, 71, 81 ceramic substrate 22, 72, 82a, 82b Chuck positive electrode electrostatic layer 23, 73, 83a, 83b Chuck negative electrode electrostatic layer 41 Heating element 180 blind hole

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 3/16 H05B 3/18 3/18 3/20 393 3/20 393 3/74 3/74 C04B 35 / 58 104H 104Y F term (reference) 3K034 AA02 AA05 AA10 AA16 AA34 BA06 BB06 BB14 BC12 BC17 CA02 HA04 HA10 3K092 PP20 QA05 QB02 QB18 QB62 QB76 RF03 RF11 RF17 RF22 RF27 VV40 4G001 BA01 BA05 BA08 BB09 BA09 BA09 BB08 BB61 BC42 BC71 BC72 BD38 4M106 AA01 BA01 CA60 DJ02 5F031 CA02 HA02 HA03 HA10 HA14 HA18 HA33 HA37 HA38 JA01 JA02 JA17 JA45 JA46 MA33

Claims (7)

[Claims] 1. An X-ray diffraction chart comprising a conductor disposed on a ceramic substrate containing both amorphous carbon whose peaks cannot be detected or is below the detection limit and crystalline carbon whose peaks can be detected. A ceramic substrate for a semiconductor manufacturing / inspection apparatus characterized by being provided. 2. The semiconductor device according to claim 1, wherein the conductor is an electrostatic electrode, and the ceramic substrate functions as an electrostatic chuck.
A ceramic substrate for a semiconductor manufacturing / inspection device according to claim 1. 3. The ceramic substrate according to claim 1, wherein the conductor is a resistance heating element, and the ceramic substrate functions as a hot plate. 4. The conductor is formed on the surface and inside of a ceramic substrate, wherein the conductor inside is at least one of a guard electrode and a ground electrode, and the ceramic substrate functions as a wafer prober. A ceramic substrate for a semiconductor manufacturing / inspection apparatus according to claim 1. 5. The carbon content is 200 to 50.
The ceramic substrate for a semiconductor manufacturing / inspection apparatus according to claim 1, wherein the content is 00 ppm. 6. The ceramic substrate according to claim 1, wherein the ceramic substrate contains a sintering aid comprising at least one of an alkali metal oxide, an alkaline earth metal oxide and a rare earth oxide. A ceramic substrate for a semiconductor manufacturing / inspection apparatus as described in the above. 7. The ceramic substrate for a semiconductor manufacturing / inspection apparatus according to claim 1, wherein the brightness specified in JIS Z 8721 is N4 or less.