JP2002141561A - Manufacturing method of semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture easily a variable wavelength semiconductor light emitting device which is excellent in mass productivity. SOLUTION: A fluorescent substance chip (3) having a substrate (1) formed out of a thermoplastic resin and having a fluorescent substance layer (2) formed on the substrate (1) is prepared to provide the fluorescent substance chip (3) on a supporting member (6), and a light emitting semiconductor chip (5) is provided on the fluorescent substance chip (3). Thereafter, the substrate (1) is heated to bond to the supporting member (6) by fusion of the substrate (1) the fluorescent substance layer (2) and the light emitting semiconductor chip (5) of the fluorescent substance chip (3). Since the fluorescent substance chip (3) is previously formed, the quantity and density of the fluorescent substance in the fluorescent substance chip (3) are made uniform to make uniform the luminescent color of the semiconductor light emitting device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device, and more particularly to a method for manufacturing a semiconductor light emitting device for converting the wavelength of light emitted from a semiconductor light emitting element and emitting the light to the outside.

[0002]

2. Description of the Related Art A light emitting diode device for converting the wavelength of light emitted from a light emitting diode chip with a phosphor is known. For example, in Japanese Patent No. 2947343, a light-emitting diode chip is bonded to one end of a pair of wiring conductors, and an electrode between the light-emitting diode chip and the pair of wiring conductors is electrically connected by a bonding wire. A light emitting diode device which is connected and covers a light emitting diode chip or the like with a light transmissive resin sealing body is disclosed. In this light emitting diode device, when a phosphor chip including a phosphor is bonded to one end of a pair of wiring conductors and the light emitting diode chip is fixed on the upper surface of the phosphor chip,
The phosphor in the phosphor chip absorbs part of the light emitted from the light emitting diode chip and converts the wavelength to another emission wavelength, so that light of a color different from that of the light emitting diode can be generated. In this light-emitting diode device, of the light components emitted from the light-emitting diode chip in all directions, a part of the light component emitted downward and a part of the light component emitted laterally and scattered and reflected on the side wall of the cup are fluorescent light. The light reaches the body chip, where the light is wavelength-converted and converted into light of a different wavelength, and then emitted from the phosphor chip. This wavelength-converted light is mixed with light that is not wavelength-converted by the phosphor chip, and is emitted to the outside of the resin sealing body.

[0003] In this light emitting diode device, since the phosphor chip is fixed to the cup of the wiring conductor in advance and then the light emitting diode chip and the bonding wire can be attached, the resin containing the phosphor can be put into the cup with a syringe. Compared to the method of filling and manufacturing, it is considered to be advantageous because damage of the light emitting diode chip and the bonding wire can be prevented.

[0004]

In the above-mentioned light emitting diode device, the light emitting diode chip must be fixed to the phosphor chip previously fixed to the cup of the wiring conductor with a light transmitting adhesive. However, the mass production was poor. Accordingly, an object of the present invention is to provide a method of manufacturing a light wavelength conversion type semiconductor light emitting device which is easy to manufacture and excellent in mass productivity. Another object of the present invention is to provide a method for manufacturing a light wavelength conversion type semiconductor light emitting device that generates uniform colored light.

[0005]

A first method of manufacturing a semiconductor light emitting device according to the present invention comprises a substrate (1) formed of a thermoplastic resin and a phosphor layer (2) formed on the substrate (1). A) preparing a phosphor chip (3) having:
While disposing (3) on the support member (6), the phosphor chip (3)
A step of disposing the light emitting semiconductor chip (5) thereon, and heating the base (1) to melt the base (1) to form the phosphor layer (2) and the light emitting semiconductor chip (5) of the phosphor chip (3). Bonding to the support member (6).

A second method of manufacturing a semiconductor light emitting device according to the present invention comprises a base (1) formed of a thermoplastic resin and a base.
(1) Phosphor chip having phosphor layer (2) formed thereon
Forming a semiconductor chip assembly (11) composed of (3) and a light-emitting semiconductor chip (5);
1) arranging the support member (6), and heating the base (1) to melt the base (1) to form the phosphor layer (2) and the light emitting semiconductor chip (5) of the phosphor chip (3). Bonding to the support member (6).

In the present invention, since the phosphor chip (3) is formed in advance, the amount and density of the phosphor in the phosphor chip (3) become uniform, and the emission color of the semiconductor light emitting device becomes uniform. Also, since the thermoplastic substrate (1) disposed on the lead frame (6) is melted and the phosphor layer (2) is adhered to the lead frame (6) without using an inconvenient adhesive separately. In addition, the semiconductor light emitting device can be easily manufactured.

[0008] In the embodiment of the present invention, furthermore, the support member
Phosphor chip (3) and light emitting semiconductor chip bonded to (6)
A step of covering (5) with a sealing resin (15). Base (1)
Can be formed of a translucent resin. The particle mixture is applied on a substrate (1) formed of a thermoplastic resin, the particle mixture is cured, and the particle mixture is adhered to the substrate (1), and the phosphor layer (2) is adhered to the substrate (1). ) To form a phosphor chip (3). Phosphor chip (3)
Is formed by cutting a substrate (1) having a phosphor layer (2) to a required size, and a semiconductor chip assembly (11) is formed of a phosphor layer (2).
An assembly composed of the base, the base (1) and the semiconductor wafer (10) can be formed by cutting it to a required size. When the lead frame constituting the support member (6) is heated, the base (1) melts.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a semiconductor light emitting device according to the present invention applied to a method for manufacturing a light emitting diode device will be described with reference to FIGS.
FIG. 12 will be described. First, fluorescent particles are mixed with a translucent binder to form a particle mixture, and the particle mixture is agitated to form a particle mixture in order to form a more uniform phosphor layer (2). The binder is an adhesive resin such as polyethylene, polypropylene, polycarbonate, polyurethane, polyacetal, polyamide resin, acrylic resin, or a metalloxane sol, and has good adhesion to the fluorescent particles and the base (1). The phosphor powder has the general formula: (Y
_{1-x, Gd x) 3} (Al 1-y, Ga y) 5 O 12: Ce z, Pr w, where, 0 ≦ x ≦
0.5, 0 ≦ y ≦ 0.5, 0.001 ≦ z ≦ 0.5 and 0.5.
Since it contains a phosphor represented by 001 ≦ w ≦ 0.5,
A new light emission peak of a wavelength component that becomes red light emission and sufficient luminance are obtained, and the color rendering properties are improved. In particular, by using a phosphor containing aluminum (Al), the luminance increases, the intensity of a new emission peak of the wavelength component of red light emission increases, and the color rendering property is further improved.
Further, the phosphor powder may be a phosphor other than YAG.

[0010] Separately, a base (1) made of a translucent and heat-meltable resin as shown in FIG. 1 and having a relatively large area for preparing a large number of phosphor chips (3) is prepared. The substrate (1) is 50
The material is selected from, for example, transparent polyethylene, polypropylene, polycarbonate, polyurethane, polyacetal, polyamide resin, and acrylic resin that are melted by heating at 200 ° C.

Next, the particle mixture is applied to the entire surface of the substrate (1) so that a large number of phosphor chips (3) can be obtained, the particle mixture is cured, and the particle mixture is placed on the substrate (1). And then, as shown in FIG.
A μm phosphor layer (2) is formed on a substrate (1). Next, the substrate (1) having the phosphor layer (2) in a grid pattern from the vertical and horizontal directions is subjected to a known dicing (saw dice or the like) to obtain the substrate (1).
Is cut into a mesh in the required size, and the phosphor chip (3)
To form As a result, as shown in FIG.
420μm, horizontal 330-420μm, thickness 20-200μ
m having a square shape and a substrate (1) and a phosphor layer (2)
Is formed. As shown in FIG. 3, the phosphor layer (2) of the phosphor chip (3) is brought into contact with a concave portion (4) formed in, for example, a cathode lead (6a) of a lead frame (support member) (6). Phosphor chip on recess (4)
While (3) is arranged, the light emitting diode chip (5) is stacked and arranged on the base (1) of the phosphor chip (3). Subsequently, as shown in FIG. 5, the phosphor chip (3) is melted by heating the lead frame (6) to the melting temperature of the resin material constituting the base (1). (3) phosphor layer
(2) and LED chip (5) are lead frame (6)
Adhered to. The substrate (1) used in the practice of the present invention constitutes an adhesive layer for bonding the phosphor chip (3) and the light emitting diode chip (5) at the time of melting, and the thickness of the substrate (1) is about 10 to 10.
100 μm. Thereafter, the plurality of electrodes (5a, 5b) provided on the light emitting diode chip (5), the cathode lead (6a) and the anode lead (6b) are electrically connected by the wiring conductors (7, 8), and the lead frame is connected. The phosphor chip (3) and the light emitting diode chip (5) adhered to (6) are covered with a sealing resin (15) to complete a semiconductor diode device. When the LED chip (5) is energized and emits light, the substrate (1)
Has a light transmitting property, a part of the light emitted from the light emitting diode chip (5) passes through the base (1) and the phosphor chip (3)
Although the wavelength is converted by the fluorescent material that is irradiated and excited by the fluorescent material inside, the other part of the light is not emitted to the fluorescent material and is emitted directly to the outside. When a semiconductor light emitting device is composed of a light emitting diode chip (5) made of a gallium nitride compound semiconductor that emits blue light, the light whose wavelength has been converted by the phosphor chip (3) and the light emitting diode chip (5) are directly externalized. Is mixed with the light emitted to form white light having a sufficient luminance by color mixing, and the color rendering properties are also improved. Also, by using the phosphor chip (3), the light emitting diode chip (5) and the anode lead (6a) and the cathode lead (6
A semiconductor light emitting device can be manufactured without damaging b). As described above, in the first embodiment of the present invention, the phosphor chip (3) is formed using the translucent and thermoplastic substrate (1), and the light emitting diode chip (5) and the phosphor chip are formed. (3)
Are diced, and then they are bonded on a lead frame (6).

In a second embodiment according to the present invention, a light-transmitting or non-light-transmitting substrate (1) having a phosphor layer (2) is cut into a required size to obtain a fluorescent material shown in FIG. After forming the body chip (3), as shown in FIG. 7, the light emitting diode chip (5) is adhered to the phosphor layer (2) of the phosphor chip (3) with a light-transmitting adhesive. As the translucent adhesive, polyethylene, polypropylene, polycarbonate, polyurethane, polyacetal, polyamide resin, acrylic resin, or the like is used. The phosphor layer (2) is used for bonding the light emitting diode chip (5).
It may be adhered by an adhesive component constituting itself. Next, the substrate (1) is brought into contact with the concave portion (4) of the lead frame (6), and the phosphor chip (3) is arranged in the concave portion (4). Subsequently, the base (1) of the phosphor chip (3) is adhered to the lead frame (6) by heating the lead frame (6) and melting the base (1), and then provided on the light emitting diode chip (5). The plurality of electrodes (5a, 5b) and the cathode lead (6a) and the anode lead (6b) are electrically connected by the wiring conductors (7, 8), and the phosphor chip adhered to the lead frame (6). (3) and the light emitting diode chip (5) is covered with a sealing resin (15),
Complete the semiconductor diode device. As described above, in the second embodiment of the present invention, the phosphor chip (3) is formed using the thermoplastic substrate (1), and the phosphor chip (3) to which the semiconductor chip (5) is adhered. Is bonded to the lead frame (6).

In a third embodiment according to the present invention, FIG.
As shown in (2), a wafer (10) on which a plurality of light emitting diode chips (5) are formed is bonded to the other main surface (1b) of the base (1). The bonding of the wafer (10) to the substrate (1) may utilize the adhesiveness of the substrate (1) itself, or may use another adhesive substance. Next, the substrate (1) having the phosphor layer (2) and the semiconductor wafer (10) is cut into a required size in a grid pattern from vertical and horizontal directions, and the semiconductor chip assembly (11) shown in FIG. To form
Thereafter, as in FIG. 4, the phosphor layer (2) of the semiconductor chip assembly (11) is brought into contact with the concave portion (4) of the cathode lead (6a), and the semiconductor chip assembly (11) is placed in the concave portion (4). To place. The phosphor layer is heated by heating the cathode lead (6a) and melting the base (1).
After bonding the lower surface of (2) to the recess (4), a plurality of electrodes (5a, 5b) provided on the light emitting diode chip (5) and the cathode lead (6a) and the anode lead (6b) are connected to the wiring conductor ( (7), (8), and the phosphor chip (3) and the light emitting diode chip (5) bonded to the lead frame (6) are sealed with a sealing resin.
Coat with (15). Therefore, in the third embodiment of the present invention, a phosphor chip (3) is formed using a translucent and thermoplastic substrate (1), and a semiconductor wafer (10) is formed on a phosphor layer (2). It is characterized in that dicing is performed simultaneously after bonding.

In a fourth embodiment according to the present invention, after a phosphor layer (2) is formed on one main surface (1a) of a translucent substrate (1), as shown in FIG. Light emitting diode chip
The wafer (10) on which (5) is formed is adhered on the phosphor layer (2) with a translucent adhesive. As the translucent adhesive, polyethylene, polypropylene, polycarbonate, polyurethane, polyacetal, polyamide resin, acrylic resin, or the like is used. Subsequently, the substrate (1) having the phosphor layer (2) and the wafer (10) is cut (diced) to a required size to form a semiconductor chip assembly (11).
Insert the semiconductor chip assembly (11) into the recess (4) so that it contacts the (4).
Place within. By heating the lead frame (6) and melting the base (1), the phosphor layer (2) and the light emitting diode chip (5) can be bonded to the recess (4). In a fourth embodiment of the present invention, a non-translucent and thermoplastic substrate
Create phosphor chip (3) using (1)
It is characterized in that dicing (10) is performed at the same time after bonding to the phosphor layer (2).

In the present invention, since the phosphor chip (3) is formed in advance, the amount and density of the phosphor in the phosphor chip (3) become uniform, and the emission color of the semiconductor light emitting device becomes uniform. Also, since the thermoplastic substrate (1) disposed on the lead frame (6) is melted and the phosphor layer (2) is adhered to the lead frame (6) without using an inconvenient adhesive separately. In addition, the semiconductor light emitting device can be easily manufactured.

The embodiments of the present invention can be modified. For example, as shown in FIG. 12, the phosphor layer (2) is
The light emitting diode chip (5) may be arranged on the upper surface of the upper substrate (1).

[0017]

As described above, according to the manufacturing method of the present invention, since the wavelength conversion type semiconductor light emitting device is manufactured using the phosphor chip (3) on which the adhesive layer is formed in advance, the manufacturing process is simple. And is excellent in mass productivity. Also, the phosphor chip
In (3), since a predetermined amount of fluorescent substance can be contained with high accuracy, a highly reliable semiconductor light emitting device with little color variation between products can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a base.

FIG. 2 is a cross-sectional view showing a state where a phosphor layer is formed on a substrate.

FIG. 3 is a perspective view showing a state in which a phosphor chip is arranged in a concave portion of a lead frame.

FIG. 4 is a sectional view showing a state where a phosphor chip and a light emitting diode chip are arranged on a cathode lead.

FIG. 5 is a sectional view showing a state after the phosphor chip shown in FIG. 4 has been heated;

FIG. 6 is a sectional view of a semiconductor light emitting device completed by the method of the present invention.

FIG. 7 is a perspective view of a semiconductor chip assembly according to another embodiment of the present invention;

FIG. 8 is a cross-sectional view showing a state where a semiconductor wafer is bonded to a base on which a phosphor layer is formed.

FIG. 9 is a perspective view of a semiconductor chip assembly according to a second embodiment of the present invention.

FIG. 10 is a sectional view showing a state in which a semiconductor wafer is bonded to a phosphor layer formed on a base.

FIG. 11 is a perspective view of a semiconductor chip assembly according to a third embodiment of the present invention.

FIG. 12 is a perspective view of a semiconductor chip assembly according to a fourth embodiment of the present invention.

[Explanation of symbols]

(1) ··· Substrate, (2) ·· Phosphor layer, (3) ·· Phosphor chip, (4) ·· Recess, (5) ·· Light emitting semiconductor chip (light emitting diode chip), (5a, 5b)・ ・ ・ Electrode, (6) ・ ・ Lead frame (supporting member), (6a) ・ ・ Cathode lead, (6b) ・ Anode lead, (7, 8) ・ ・ Wiring conductor, (10) ・ ・ Semiconductor wafer , (11) ・ ・ Semiconductor chip assembly, (15) ・ ・ Encapsulation resin,

Continued on front page F-term (reference) 4M109 AA01 BA01 EC11 GA01 5F041 AA14 AA42 AA43 CA40 CA76 DA07 DA12 DA18 DA20 DA43 DB01 EE25 5F047 AA01 BA37 BB01 CA01

Claims (8)

[Claims] A step of preparing a phosphor chip having a substrate formed of a thermoplastic resin and a phosphor layer formed on the substrate; and disposing the phosphor chip on a support member; Arranging a light emitting semiconductor chip on the phosphor chip; and bonding the phosphor layer of the phosphor chip and the light emitting semiconductor chip to the support member by heating the base and melting the base. A method for manufacturing a semiconductor light emitting device, comprising: 2. A step of forming a semiconductor chip assembly including a substrate formed of a thermoplastic resin, a phosphor chip having a phosphor layer formed on the substrate, and a light-emitting semiconductor chip; Disposing a semiconductor chip assembly on a support member; and bonding the phosphor layer of the phosphor chip and the light emitting semiconductor chip to the support member by heating the base and melting the base. A method for manufacturing a semiconductor light emitting device. 3. The method of manufacturing a semiconductor light emitting device according to claim 1, further comprising a step of covering the phosphor chip and the light emitting semiconductor chip adhered to the support member with a sealing resin. 4. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein said base is formed of a resin having a light transmitting property. 5. The phosphor chip comprises applying a particle mixture on the substrate formed of a thermoplastic resin, curing the particle mixture, and adhering the particle mixture to the substrate, The method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 4, wherein the phosphor layer is formed on a substrate. 6. The method according to claim 1, wherein the phosphor chip is formed by cutting the substrate having the phosphor layer into a required size. 7. The method according to claim 2, wherein the semiconductor chip assembly is formed by cutting an assembly including a phosphor layer, a base, and a semiconductor wafer into a required size. 8. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein said base is melted when a lead frame constituting said support member is heated.