JP2002141399A - Member for supporting ceramic substrate for manufacturing and inspecting semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a supporting member for supporting a ceramic heater excellent in temperature uniformity of heating surface or a ceramic substrate provided by function of an electrostatic chuck safely and effectively supporting a wafer and a wafer prober, especially structure of the supporting member having an intermediate bottom plate and a bottom plate having high flatness. SOLUTION: The supporting member for supporting the ceramic substrate for manufacturing and inspecting semiconductor comprises the substrate, the intermediate bottom plate 11, and/or the bottom plate arranged in isolation in a cylindrical casing from top to bottom in this order, wherein a number of recesses 20 are set up on at least either the intermediate bottom plate 11 or the bottom plate, and the flatness of these plates are suppressed within 0.2 mm or less.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a support for a ceramic substrate for a semiconductor manufacturing / inspection apparatus, and particularly to a ceramic substrate used as a heater, an electrostatic chuck, a wafer prober, etc., which maintains a good flatness. We propose a convenient support, especially the structure of the midsole plate and the bottom plate.

[0002]

2. Description of the Related Art An electronic circuit of a semiconductor product is formed by applying a photosensitive resin as an etching resist on a silicon wafer and then etching. In this case, since the photosensitive resin applied to the surface of the silicon wafer has been applied by a spin coater or the like, it is necessary to dry it after application. The drying process is
This is performed by placing a silicon wafer coated with a photosensitive resin on a hot plate (hereinafter simply referred to as a “heater”) and heating. Conventionally, as such a heater for a semiconductor manufacturing / inspection apparatus, a heater in which a heating element is wired on the back surface of a substrate made of a metal plate (aluminum plate) is used.

However, when such a heater made of a metal substrate is used for drying a semiconductor product, there are the following problems. Since the substrate of the heater is made of metal, the thickness of the substrate must be increased to 15 mm or more. This is because, in a thin metal substrate, warpage or distortion occurs due to thermal expansion caused by heating, and the wafer placed on the substrate is damaged or tilted. In addition, the conventional heater has a problem that it is heavy and bulky due to its thickness.

Further, when the heating temperature of the heater is controlled by changing the voltage or current applied to the heating element attached to the substrate, if the thickness of the substrate is large, the temperature of the heater substrate may fluctuate in the voltage or current. However, there is also a problem that the temperature control characteristic of the substrate is poor.

On the other hand, in Japanese Patent Publication No. 8-8247, a nitride ceramic substrate having a heating element is used, and the temperature of the ceramic substrate is controlled while measuring the temperature in the vicinity of the heating element. Ceramic heaters have been proposed.

[0006]

However, even with such a ceramic heater, if the silicon wafer is to be heated, an uneven temperature distribution is inevitably generated on the heater surface, and the silicon wafer is sometimes damaged. There was a problem. One of the causes may be that the flatness of the ceramic substrate constituting the ceramic heater is poor. Further, it has been found that the flatness of the ceramic substrate is largely affected by the flatness of a support for supporting the ceramic substrate, particularly, a midsole plate or a bottom plate disposed below the ceramic base in the support. . However, heretofore, the flatness of the middle bottom plate and the bottom plate in the support has been devised so as to improve only the flatness of the ceramic substrate without concern for the flatness. That is, this has rather caused the flatness of the ceramic substrate to deteriorate.

Accordingly, an object of the present invention is to provide a ceramic heater having excellent temperature uniformity on a heating surface, an electrostatic chuck effective for stably supporting a wafer, and a support for supporting a ceramic substrate functioning as a wafer prober. In particular, it is an object of the present invention to propose a structure of a support having an intermediate bottom plate and a bottom plate having high flatness.

[0008]

In order to achieve the above-mentioned object, the inventors of the present invention have studied the causes of silicon wafer breakage. It has been found that the main reason for the temperature distribution is the distortion of the ceramic substrate. As a result of further research, they have found that the distortion of the ceramic substrate occurs when the support for supporting the substrate, especially the midsole or the bottom plate, has a large distortion. Therefore, the present inventors, in order to suppress the distortion of the supporter, especially the midsole plate and the bottom plate, that is, to make the midsole plate and the bottom plate with high flatness,
The inventors have found that it is effective to apply light working to these plates in the final step, and have reached the present invention.

That is, the present invention relates to a support for supporting a ceramic substrate having a heating element provided on one of the surfaces or the inside thereof. A semiconductor, characterized in that the flatness of the plate is suppressed to 0.2 mm or less when the substrate, the mid-bottom plate and / or the bottom plate are arranged separately.
It is a support for the ceramic substrate for inspection. In the present invention, in order to suppress the flatness of the midsole plate and / or the bottom plate to 0.2 mm or less, the midsole plate and / or
Alternatively, it is desirable to provide a number of depressions on at least one of the bottom plates, and the depressions may include:
It is preferable that a material having a size of 0.2 to 0.8 mm and a depth of 50 to 200 μm is arranged on at least one of the surfaces.

[0010]

DETAILED DESCRIPTION OF THE INVENTION According to the findings of the present inventors, when a ceramic substrate is used, for example, as a heater, the temperature distribution on the heated surface often becomes non-uniform over the entire plate surface. It has been found that this is caused by distortion of the ceramic substrate. It has been found that the distortion of the ceramic substrate is often caused by the distortion of the support for supporting the ceramic substrate, and that the distortion of the support is caused by the distortion of the constituent bottom plates and the bottom plate. . In short, if the ceramic substrate is distorted, the distance between the semiconductor wafer and the ceramic substrate (such as a heating substrate) becomes uneven, so that uniform heating of the semiconductor wafer cannot be performed, or the adhesion between the ceramic substrate and the semiconductor wafer decreases, This also makes uniform heating of the semiconductor wafer difficult. In addition, if the middle bottom plate or the bottom plate is distorted, the reflected heat to the ceramic substrate is irradiated non-uniformly, which also leads to non-uniform heating of the semiconductor wafer.

Therefore, an example in which the present invention is applied to a hot plate unit will be described below as an example of a ceramic substrate support for a semiconductor manufacturing / inspection apparatus according to the present invention. Note that a hot plate unit is provided with a resistance heating element on one surface or inside of a ceramic substrate, and when current is passed through the heating element to generate heat, the heat is transmitted to the heating surface of the ceramic substrate. By letting
The heater (heater) heats an object to be heated such as a silicon wafer placed on or separated from the heating surface and supported oppositely.

In this type of heater, for example, when a heating element is formed on one surface of the ceramic substrate, heat released from the heating element is attached to the heating element while conducting through the ceramic substrate. It is transmitted to the surface opposite the surface, ie the heated surface. However, since the heat released from the heating element is conducted through the ceramic substrate, the effect of increasing the temperature of the substrate is not very good. Therefore, by disposing at least one of the plate-shaped middle bottom plate and the bottom plate on the side opposite to the heating surface of the ceramic substrate, heat emitted from the heating element is reflected on these middle bottom plates or the bottom plate. It is designed to improve the thermal efficiency at the time of temperature rise or overheating.

In the case of the hot plate unit, the wiring and external devices provided below the ceramic substrate and the like are vulnerable to heat. Role.

FIG. 1 is a plan view schematically showing an example of a hot plate unit, ie, a heater, which is an embodiment of a ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention. FIG. It is a longitudinal section showing one embodiment of the state where a (heater) was attached to a supporter.

The ceramic substrate 1 is preferably formed in a disk shape, and the resistance heating element 2 is formed in a concentric pattern on one of the surfaces, for example, the bottom surface. Preferably, the resistance heating elements 2 are connected so that double concentric circles close to each other form one set of circuits.

A plurality of through holes 3 for inserting lifter pins used for carrying a silicon wafer or the like are formed in a portion near the center of the ceramic substrate 1. Immediately below, as shown in FIG. 2, a guide tube 5 is provided so as to communicate with the through hole 3, and a bottom plate through hole 4 a through which these are communicated is formed in the bottom plate 4 of the support 100. I have.

In the case of a heater, a bottomed hole 7 for inserting a temperature measuring element 6 such as a thermocouple is formed on the bottom surface of the ceramic substrate 1, and the temperature measuring element 6 is connected to a bottom plate via a lead wire or the like. 4 is connected to an external power supply through a through hole 4 a provided in the power supply 4.

The ceramic substrate 1 is fitted into the upper portion of the cylindrical casing 17 of the supporter 100 via the heat insulating ring 8 attached to the outer periphery, and is supported by the fastener 9 such as a bolt and the holding metal 10 such as a washer. Fixed to 100. An intermediate bottom plate 11 is attached below the ceramic substrate 1 in the casing 17 of the supporter 100, and a bottom plate 4 is fixed below the intermediate bottom plate 11 as necessary. In addition, the casing 17 and the bottom plate 4 of the supporter 100 may be integrally formed as shown in FIG.

In the example of the hot plate unit shown in FIG. 2, the ceramic substrate 1 is supported via a heat insulating ring 8 by a support.
Although it has a structure in which the ceramic substrate 1 is fitted into the top of the casing 17 of the casing 100, as shown in FIG.
0 on the casing 17 and the fastener 9 such as a bolt.
And a mode in which it is fixed to the top of the supporter 100 via a heat insulating member 8 '.

In the hot plate unit, an external terminal 12 is connected to the end 2a of the resistance heating element 2,
The external terminal 12 is connected to the lead wire 1 via a socket 13.
4 and this lead wire 14 is also connected to the bottom plate 4
Of the power supply (not shown)
The connection is established.

A coolant introduction pipe 15 is attached to the bottom plate 4 so that cooling air or the like can be introduced into the support 100. In addition, the midsole plate 11 includes
The through hole 3 is formed so as not to obstruct the guide tube 5 and the refrigerant introduction tube 15 fixed to the bottom plate 4.

Note that the silicon wafer is supported on the heating surface side 1a by lifter pins on the ceramic substrate 1 so that the silicon wafer is supported at a predetermined distance from the upper surface of the ceramic substrate and heated. And so on.

In this case, a through hole or a concave portion is formed on the heating surface side of the ceramic substrate 1, and a support pin 16 having a sharp tip is fixed in the through hole or the like, and a silicon wafer is placed on the support pin 16. When the silicon wafer is placed, the silicon wafer can be always supported overhead at a fixed position on the ceramic substrate 1.

Next, the intermediate bottom plate and the bottom plate constituting the support for the ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention will be described in detail. In the support device according to the present invention, the middle bottom plate and / or the bottom plate is attached to the middle or the lower end of the cylindrical casing 17 serving as the outer frame. The midsole plate 11 reflects heat radiated from the resistance heating element 2 below the ceramic substrate 1 to improve the heat retaining effect of the ceramic substrate 1, and to improve wiring and wiring provided under the ceramic substrate 1. To protect external devices from heat, so-called,
It is provided for the purpose of heat shielding. The midsole plate 11 in the casing 17 is effective not only for keeping the temperature of the ceramic substrate 1 but also for providing a space for circulating a refrigerant at the time of cooling after the temperature is raised. 11 to improve the heat retention / cooling efficiency. In addition, wiring can be fixed to the midsole plate 11.

As a material for forming the middle bottom plate 11 and the bottom plate 4, for example, metal, resin, ceramic and the like are suitable.

As the metal, for example, aluminum,
SUS, copper, nickel, and the like. When the midsole plate 11 is formed of such a metal material, it is desirable to use a material in which a film of a noble metal such as gold or silver is formed on the surface on the ceramic substrate side. This is because, by forming the noble metal film, the surface reflects heat rays and the like more efficiently. As a method for forming the noble metal film such as gold or silver on the metal surface, for example, electrolytic plating, electroless plating, sputtering and the like are suitable.

On the other hand, examples of the resin include a heat-resistant resin such as a polyimide resin, a polybenzimidazole resin, and a fluororesin. Among these resins, a polyimide resin is desirable. Extremely high thermal stability, mechanical properties,
This is because the electrical characteristics are also excellent.

As examples of ceramics, nitride ceramics, carbide ceramics, oxide ceramics and the like can be used. Even when the midsole plate 11 is formed using resin or ceramic, it is desirable that the surface on the ceramic substrate side be coated with a noble metal in order to increase the heat reflection efficiency.

It is desirable that the inner bottom plate 11 and the bottom plate 4 have a substantially disk shape, but the diameter is not particularly limited.
It may be appropriately adjusted according to the size of the ceramic substrate 1. Also, the thickness is appropriately adjusted according to the material to be used.

Further, as shown in FIG. 4, the middle bottom plate 11 and the bottom plate 4 are provided with a plurality of openings 18 and 1 in accordance with various purposes.
9 form. By providing these openings 18, the cooling medium can be satisfactorily discharged, and
This is because the cooling rate can be improved by reducing the heat capacity of the. The diameter of the opening is 1-10
About 0 mm is desirable. If it is less than 1 mm, the cooling medium cannot be sufficiently discharged, and if it exceeds 100 mm, the effect of shielding heat from the heater is lost.

In the present invention, the most important thing in the configuration of the intermediate bottom plate 11 and the bottom plate 4 is that, as shown in FIG. Is to improve. Due to the presence of these depressions 20, the distortion of the middle bottom plate 11 and the bottom plate 4 is significantly reduced. In this regard, if the distortion of the midsole plate or the like is large, as described above, the shape of the support 100 itself is distorted,
As a result, the ceramic substrate 1 is distorted and the flatness is deteriorated. In addition, the above-mentioned depression 20 is formed by inserting a steel stamping plate or the like into the middle bottom plate 1.
It can be formed by pressing against a surface such as 1. The stamping plate may be pressed after the support is formed or before the support is formed.

If the ceramic substrate 1 is distorted, the distance between the semiconductor wafer and the ceramic substrate becomes uneven, and the semiconductor wafer cannot be heated uniformly or the semiconductor wafer cannot be stably held. In addition, necessary processing for the wafer becomes difficult. Also, if the middle bottom plate 11 or the bottom plate 4 is distorted, the heat reflected from the heater from the middle bottom plate 11 or the like will be unequally applied to the ceramic substrate 1, so that the semiconductor wafer cannot be heated uniformly. It is desirable that the depressions 20 are formed in a grid pattern, that is, in a regular arrangement by the above-described stamping board or the like so as to form a grid, in order to improve the flatness of the plate.

FIG. 5 is an explanatory view showing a combination of a micrograph of the depression 20 and a graph showing the shape (depth and position) of the depression. The white part seen above is a depression,
It has a depth of 117 μm. As shown in FIG. 4, by forming such depressions 20 in a grid pattern, that is, in a lattice shape, the flatness of the plate can be increased.

According to the experiments by the inventors, the flatness of the plate can be adjusted to 0.2 mm or less by forming such depressions 20. Since many small depressions are formed uniformly (regularly), the turbulence of the air flow and the liquid flow of the refrigerant due to them is negligible. It is desirable that such a depression 20 has a depth of 50 to 300 μm, preferably 100 to 150 μm, and a circle equivalent diameter of about 0.2 to 0.8 mφ. If the depression 20 is too deep or too large, the plate will be distorted instead.

The surface of the above-mentioned middle bottom plate 11 on the side of the ceramic substrate is mirror-finished with diamond abrasive grains.
Alternatively, by performing polishing or the like using a diamond grindstone of # 50 to # 800, the surface roughness based on JIS B 0601 can be reduced.
It is desirable to perform polishing so that Ra = 20 μm or less.

The inner bottom plate 11 and the bottom plate 4 do not necessarily need to be fixed to the casing 17 of the supporter 100. For example, as described later, the inner bottom plate 11 is pressed and supported by leaf springs 20, 21 provided on the bottom plate 4. You may do it. The use of the leaf spring 21 makes it possible to support the midsole plate 11 in a non-contact manner with the casing 17 of the support device 100, and the support device 100 may be distorted due to thermal expansion or contraction of the midsole plate 11. Disappears. FIG. 3 is a cross-sectional view schematically showing a hot plate unit in a semiconductor manufacturing / inspection apparatus according to another embodiment of the present invention, showing an example of use of the leaf spring 21.

In the hot plate unit shown in this example, the supporter 100 has a casing 17 constituting a cylindrical outer frame integrally formed with the bottom plate 4. ~ 300 μm depth, 0.2-0.8
The depressions 20 having a size of mmφ are formed in a regular array such as a grid pattern. Further, a plurality of openings 18 and 19 are formed in the bottom plate 4 in the same manner as described above, and exhaust is performed through the openings 18. Although not shown, exhaust may be performed by providing an exhaust pipe (exhaust port). In that case, the inside of the supporter 100 is generally sealed.

The midsole plate 11 is located in the middle of the support 100,
One end is overhead supported by a leaf spring 21 having a Z-shaped cross section fixed to the bottom plate 4. From the bottom plate 4, a refrigerant supply pipe (supply port) 23 for supplying a refrigerant to a space between the middle bottom plate 11 and the ceramic substrate 1 is formed. The refrigerant can be supplied to the space partitioned by the above.

Also in this example, although not shown, the above-mentioned guide tube is formed on the ceramic substrate 1 so that the lifter pin can be inserted therethrough. By moving up and down, the silicon wafer S can be moved up and down.

On the other hand, a heat insulating ring 8 can be attached to the top of the casing 17 of the supporter 100, and the ceramic substrate 1 is fixed to the heat insulating ring 8 via a fastener 9 and a holding metal 10. Can be.

The ceramic substrate 1 in the illustrated example has an insulating layer 1a formed on the surface and a resistance heating element 2 formed on the bottom surface via the insulating layer 1a to function as a heater.

An external power supply terminal 12 is fixed to the end of the resistance heating element 2 by soldering, and can be connected to an external power supply via a socket 13 having a wiring at the external terminal 12. Has become.

Examples of the material of the ceramic substrate include nitride ceramic, carbide ceramic, oxide ceramic and the like. Examples of the nitride ceramic include aluminum nitride, silicon nitride, boron nitride, and titanium nitride.Examples of the carbide ceramic include, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, and carbide. Tungsten or the like can be used. Examples of the oxide ceramic include, for example, alumina, zirconia, cordierite,
Mullite or the like can be used. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Also, among nitride ceramics, aluminum nitride is most preferred. This is because the thermal conductivity is the highest at 180 W / m · K.

In the present invention, the resistance heating element 2 formed on one surface of or inside the ceramic substrate 1 is made of a noble metal (gold, silver, platinum, palladium),
It is desirable to use a conductive ceramic such as a metal such as lead, tungsten, molybdenum or nickel, or a carbide of tungsten or molybdenum. This is because the resistance value can be increased, the thickness itself can be increased for the purpose of preventing disconnection, and the like, and it is difficult to oxidize and the thermal conductivity does not easily decrease. These may be used alone or in combination of two or more.

The resistance heating element 2 needs to make the temperature of the entire ceramic substrate 1 uniform.
And a combination of a concentric pattern and a concentric pattern with a bent line pattern as shown in FIG. Further, the thickness of the resistance heating element 2 is desirably 1 to 50 μm, and the width thereof is desirably 5 to 20 mm. Resistance heating element 2
The resistance value can be changed by changing the thickness and width of the above, but this range is the most practical. The resistance value of the resistance heating element becomes thinner and becomes larger as it becomes thinner. When the resistance heating element 2 is provided inside,
Since the distance between the heating surface and the resistance heating element 2 is reduced and the uniformity of the surface temperature is reduced, it is necessary to increase the width of the resistance heating element 2 itself.

The resistance heating element 2 may have any of a square, an elliptical, a spindle, and a semi-cylindrical cross section, but is preferably flat. This is because the flat surface is easier to radiate heat toward the heating surface, so that the amount of heat propagation to the heating surface can be increased, and the temperature distribution on the heating surface is less likely to occur. Note that the resistance heating element 2 may have a spiral shape.

Specific examples of the ceramic substrate for a semiconductor manufacturing / inspection apparatus used in the present invention include an electrostatic chuck, a wafer prober, a hot plate, and a susceptor. The hot plate unit is a device in which only the resistance heating element 2 is provided on the surface or inside of the ceramic substrate, and can heat an object to be heated such as a silicon wafer to a predetermined temperature. On the other hand, when an electrostatic electrode is provided inside a ceramic substrate, it functions as an electrostatic chuck. Examples of the electrostatic electrode include noble metals (gold, silver, platinum, palladium), lead, tungsten,
Metals such as molybdenum and nickel, and conductive ceramics such as carbides of tungsten and molybdenum can be used. Further, when a chuck top conductor layer is provided on the surface of the ceramic substrate and a guard electrode and a ground electrode are provided inside, the device functions as a wafer prober. As a configuration example of a typical wafer prober, a concentric groove is formed on the surface of a ceramic substrate having a circular shape in plan view, and a plurality of suction holes for sucking a silicon wafer are provided in a part of the groove. There is a ceramic substrate in which a chuck top conductor layer for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate including the groove.

[0049]

The present invention will be described in more detail below.

Example 1 Production of Hot Plate Unit (See FIGS. 1 and 2) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O ₃₎ : A composition comprising 4 parts by weight of yttria, an average particle diameter of 0.4 μm), 12 parts by weight of an acrylic binder and alcohol was spray-dried to prepare a granular powder.

(2) The granular powder was placed in a mold and formed into a flat plate to obtain a green body. (3) The green compact after the processing was hot-pressed at a temperature of 1800 ° C. and a pressure of 20 MPa to obtain an aluminum nitride sintered body having a thickness of 3 mm. Next, a diameter of 21
A 0 mm or 310 mm disk was cut out to obtain a ceramic plate (ceramic substrate 1).

Next, this plate is drilled to form a through hole 3 for inserting a lifter pin of a silicon wafer and a bottomed hole 7 for embedding a thermocouple 6 (diameter: 1.1 mm, depth: 2 mm).

(4) On the bottom surface of the sintered body obtained in (3),
The conductor paste was printed by screen printing. The printing pattern was concentric as shown in FIG. As a conductive paste, Solvest PS603 manufactured by Tokurika Kagaku Kenkyusho used for forming through holes in printed wiring boards is used.
D was used. This conductor paste is a silver-lead paste, and based on 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight). And 7.5 parts by weight of a metal oxide comprising alumina (5% by weight). Also,
The silver particles had an average particle size of 4.5 μm and were scaly.

(5) The sintered body on which the conductive paste is printed is 78
By heating and baking at 0 ° C., silver and lead in the conductor paste were sintered and baked on a sintered body to form a resistance heating element 2. The silver-lead resistance heating element 2 has a thickness of 5 μm,
The width was 2.4 mm, and the area efficiency was 7.7 mΩ / □.

(6) Nickel sulfate 80 g / 1, sodium hypophosphite 24 g / 1, sodium acetate 12 g / 1,
The sintered body prepared in the above (5) was immersed in an electroless nickel plating bath composed of an aqueous solution having a concentration of boric acid of 8 g / 1 and ammonium chloride of 6 g / 1, and a thickness of 1 μm was formed on the surface of the silver-lead resistance heating element 2. A metal nickel coating layer (not shown) was deposited.

(7) A silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the portion where the external terminals 12 were to be mounted, to form a solder paste layer. Next, an external terminal 1 made of Kovar is placed on the solder paste layer.
2 and placed on the external terminals 12
Was attached to the end of the resistance heating element 2 via a solder layer.

(8) A thermocouple for temperature control was inserted into the bottomed hole, filled with a polyimide resin, and cured at 190 ° C. for 2 hours.

(9) The support 100 was prepared, and the ceramic substrate 1 having the resistance heating element 2 was fitted into the top of the casing 17 via the heat insulating ring 8.

(10) SUS attached to the support 100
Buffing is performed on the surface of the inner bottom plate 11 made of ceramics on the ceramic substrate 1 side, and the surface roughness based on JIS B 0601 is Ra = 0.1 μm,
Rmax was set to 0.8 μm.

Next, as shown in FIG.
1 is attached to the support 100, the external terminal 12 is pulled out from the through hole formed in the midsole plate 11, and the socket 13 connected to the lead wire is inserted into the external terminal 12, thereby obtaining the external terminal 1.
2 and a lead wire were connected. Then, a plurality of depressions 20 (depth: 120 μm, diameter: 0.5 mm) are formed in the middle bottom plate 11 by a method of pressing a SUS stamping plate with a force of 98 N as shown in FIG. did.

(11) Thereafter, as shown in FIG. 2, the bottom plate 4 having other jigs was attached to the support 100 by welding with a yuxima laser, and the production of the hot plate was completed.

Example 2 Hot plate unit (see FIG. 3) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttrium oxide (Y
₂ O ₃ : yttria, average particle size 0.4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight, dispersant 0.5 part by weight, and alcohol 5 composed of 1-butanol and ethanol
A green sheet 50 having a thickness of 0.47 mm was prepared by using a paste mixed with 3 parts by weight by a doctor blade method.

(2) After the green sheet 50 was dried at 80 ° C. for 5 hours, a portion to be a through hole was formed by punching.

(3) 100 parts by weight of dangsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of an α-terpineol solvent and 0.3 part by weight of a dispersant are mixed. Conductive paste A was prepared.

Dangsten particles 100 having an average particle size of 3 μm
By weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent and 0.2 part by weight of a dispersant were mixed to prepare a conductive paste B. This conductor paste A
Was printed on a green sheet by screen printing to form a conductive paste layer for the resistance heating element 2. The printing pattern was a concentric pattern as shown in FIG. 1, the width of the conductive paste layer was 10 mm, and the thickness thereof was 12 μm. In addition, a conductive paste B was filled into the portion to be a through hole to form a filling layer.

On the green sheet after the above processing, 37 green sheets on which no tungsten paste is printed are printed on the upper side (heating surface), 13 sheets on the lower side, 130 ° C., 8 MPa
The layers were laminated under the following pressure.

(4) The obtained laminate was placed in a nitrogen gas at 600
C. for 5 hours, and hot-pressed at 1890.degree. C. under a pressure of 15 MPa for 10 hours to obtain a 3 mm-thick aluminum nitride sintered body. This is cut out into a 230mm disk shape and the thickness is 6
μm, 10mm wide (aspect ratio: 1666) resistance heating element 2
Was obtained.

(5) The plate obtained in (4) is polished with a diamond grindstone, a mask is placed on the plate, and a through hole and a surface for inserting lifter pins are formed by blasting with SiC or the like. A hole with a bottom for burying a thermocouple was provided in the device.

(6) A support 100 is prepared, and the resistance heating element 2
Was fitted into the top of the casing 17 of the support via the heat insulating ring 8.

(7) Thickness 1.5 Attached to Support 100
The surface of the middle bottom plate 11 made of alumina having a thickness of 1 mm on the ceramic substrate 1 side is polished with a load of 1 kg / cm ² with SiC abrasive grains having a particle size of 10 μm, and the surface roughness based on JIS B 0601 is Ra = 10 μm.
m, Rmax = 100 μm.

Next, as shown in FIG.
1 was attached to the support 100, the external terminal 12 was pulled out from the through hole formed in the midsole plate 11, and the socket 13 connected to the lead wire was inserted into the external terminal 12, thereby connecting the external terminal and the lead wire. . And, in the said middle bottom plate 11,
As shown in FIG. 4, a depression 20 (depth: 120 μm, diameter: 0.5 mm) was formed in the same manner as in Example 1.

(10) Thereafter, the bottom plate 4 having other jigs was attached to the support 100 as shown in FIG. 3, and the production of the hot plate was completed.

(Example 3) The surface of a disk to be used as the inner bottom plate 11, that is, a disk made of SUS having a thickness of 1.5 mm and a diameter of 320 mm was polished with a # 220 diamond grindstone at a load of 1 kg / cm ^2. The surface roughness of the surface was Ra = 0.6 μm and Rmax = 3.8
μm. Then, a SUS stamping plate provided with pins having a diameter of 0.3 mm and a depth of about 130 μm is pressed against the inner bottom plate 11 with a pressure of 10 kg / cm ² , As shown in FIG. 4, a depression 20 having a depth of about 120 μm and a diameter of about 0.4 mm was formed on the surface like a grid. This midsole plate 11 is
The support 17 was integrated with the casing 17 by welding with a yuxima laser. The inner bottom plate 11 has a diameter of 30 mm.
5 openings, 80 8 mm openings, 1 10 mm openings
0 are formed and the aperture ratio is 10%.

(Embodiment 4) A disc to be the bottom plate 4, that is,
The surface of a SUS disk with a thickness of 1.5 mm and a diameter of 320 mm is #
The surface was polished with a diamond grindstone of 80 with a load of 1 kg / cm ² and the surface roughness was Ra = 18 μm, Rmax = 210 μ.
m. Next, a stamping plate having a pin having a diameter of about 0.3 mm formed on the surface thereof is pressed against the SUS disk at a pressure of 10 kg / cm ² , and a depth is applied to the surface as shown in FIG.
A depression 20 of about 130 μm was formed like a grid.
This disc was used as the bottom plate 4 and was welded to a SUS casing by an integrated Yixima laser to obtain a support 100.

(Example 5) As shown in FIG. 3, the midsole plate 11 was placed on leaf springs 21 provided at three places of the support 100, and was fixed with screws. As the resistance heating element 2, the ceramic substrate 1, and the depression 20 of the bottom plate, those manufactured under the same conditions as in Example 1 were used.

(Comparative Example 1) A hot plate was manufactured in the same manner as in Example 1 except that the midsole plate 11 having no recess 20 was mounted on the outer frame casing 17 of the supporter 100. .

The hot plate units thus obtained according to Examples 1 to 6 and Comparative Example 1 were energized to
After the temperature was raised to 0 ° C, room temperature air was used as a refrigerant, and
Air was blown from the refrigerant introduction pipes 15 and 23 at a flow rate of 01 m ³ / min to cool. The hot plate unit was evaluated according to the following criteria.

Evaluation Method (1) Uniformity of Temperature of Silicon Wafer The temperature of the silicon wafer during heating was measured with a thermoviewer (IR620 12-0012, manufactured by Nippon Datum) and expressed as the difference between the maximum temperature and the minimum temperature. (2) Flatness of the plate-like body One point is set to 0 (base point), and how much other 7 points are displaced from the base point is checked with a laser displacement meter, and the average value is displayed as flatness (mm). And

[0079]

[Table 1]

As shown in Table 1 above, it was found that the hot plate units according to Examples 1 to 6 can raise and lower the temperature in a short time, and have high temperature raising and lowering efficiency.
It was also found that a small amount of power was required to maintain the same temperature. On the other hand, in the hot plate unit according to Comparative Example 1, the heating efficiency and the cooling efficiency were poor because the flatness was reduced due to the absence of the depression in the middle bottom plate,
As a result, it took longer time to raise and lower the temperature than in the example.

[0081]

As described above, according to the substrate support for a semiconductor manufacturing / inspection apparatus of the present invention, by forming a depression in the middle bottom plate or the bottom plate, the temperature rise by the resistance heating element or the like can be achieved.
Insulation can be efficiently performed. Further, the semiconductor wafer can be uniformly heated, the variation in the temperature lowering time can be reduced, and a semiconductor-related product such as a silicon wafer having good characteristics can be stably manufactured.

[Brief description of the drawings]

FIG. 1 is a plan view showing a hot plate unit, particularly a ceramic substrate, which is an example of a semiconductor manufacturing / inspection apparatus of the present invention.

FIG. 2 is a longitudinal sectional view of a ceramic substrate supporter.

FIG. 3 is a longitudinal sectional view showing another embodiment of the ceramic substrate support.

FIG. 4 is a plan view of the midsole plate according to the present invention.

FIG. 5 is an explanatory diagram showing a state of a surface of a midsole plate having a depression.

[Explanation of symbols]

 1. 1. Ceramic substrate 2. Resistance heating element Through hole 4. Bottom plate 8. Insulation ring 9. Fastener 11. Middle sole plate 17. Casing 20. Depression

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 3/68 H01L 21/302 B (72) Inventor Yuzuru Saito 1-1 Ibigawa-cho, Ibi-gun, Ibi-gun, Gifu Prefecture Ibid 3K092 PP20 QA05 QB02 QB26 QB31 QB43 QB47 QB75 QB76 QC02 QC20 QC25 RF03 RF11 RF17 RF22 RF26 VV22 5F004 AA01 BB22 BB26 BB29 CA04 5F031 CA02 HA02 HA03 HA04 HA04

Claims (3)

[Claims] 1. A support for supporting a ceramic substrate provided with a heating element on one surface or inside thereof, wherein the support is arranged on a cylindrical casing in order from the top, the substrate, and the center. When the bottom plate and / or the bottom plate are arranged separately, the flatness of the plate is suppressed to 0.2 mm or less. 2. The apparatus according to claim 1, wherein at least one of said middle bottom plate and said bottom plate has a large number of depressions.
A support according to item 1. 3. The method according to claim 1, wherein the depression has a diameter of 0.2 to 0.8 mm and a depth of 50 to 300 μm and is arranged on at least one of the surfaces. The support according to claim 1 or 2.