JP2002134745A5 - - Google Patents
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- Publication number
- JP2002134745A5 JP2002134745A5 JP2000326143A JP2000326143A JP2002134745A5 JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5 JP 2000326143 A JP2000326143 A JP 2000326143A JP 2000326143 A JP2000326143 A JP 2000326143A JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000326143A JP2002134745A (en) | 2000-10-25 | 2000-10-25 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000326143A JP2002134745A (en) | 2000-10-25 | 2000-10-25 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002134745A JP2002134745A (en) | 2002-05-10 |
| JP2002134745A5 true JP2002134745A5 (en) | 2007-02-22 |
Family
ID=18803383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000326143A Pending JP2002134745A (en) | 2000-10-25 | 2000-10-25 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002134745A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100869340B1 (en) * | 2002-07-19 | 2008-11-19 | 주식회사 하이닉스반도체 | Method for fabricating dual gate electrode in semiconductor device |
| JP2004172259A (en) | 2002-11-19 | 2004-06-17 | Oki Electric Ind Co Ltd | Method for manufacturing semiconductor element |
| KR100609942B1 (en) * | 2004-01-09 | 2006-08-08 | 에스티마이크로일렉트로닉스 엔.브이. | Method of manufacturing flash memory cell |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864808A (en) * | 1994-08-19 | 1996-03-08 | Toshiba Corp | Semiconductor device and its manufacture |
| JP3543504B2 (en) * | 1996-08-06 | 2004-07-14 | ソニー株式会社 | Method for manufacturing semiconductor device |
| JPH1098004A (en) * | 1996-09-20 | 1998-04-14 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JP3564908B2 (en) * | 1996-12-24 | 2004-09-15 | ソニー株式会社 | Method for manufacturing semiconductor device |
| JPH10261792A (en) * | 1997-03-18 | 1998-09-29 | Hitachi Ltd | Semiconductor device and its manufacture |
| JP3191287B2 (en) * | 1998-07-31 | 2001-07-23 | 日本電気株式会社 | Semiconductor device and method of manufacturing the same |
| KR100329769B1 (en) * | 1998-12-22 | 2002-07-18 | 박종섭 | method for forming titanium polycide gate electrode |
| KR100327432B1 (en) * | 1999-02-22 | 2002-03-13 | 박종섭 | Method for forming metalline of semiconductor device |
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2000
- 2000-10-25 JP JP2000326143A patent/JP2002134745A/en active Pending