JP2002110530A - Electron beam aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam aligner in which an error in movement of a stage due to inclination of a mirror can be corrected by calculating the mirror inclination to precisely expose an electron beam. SOLUTION: There are provided a first position calculating unit wherein a mark on a stage is irradiated with an electron beam, the amount of the emitted electrons is detected and the position of the stage is calculated based on the detected electron amount; and a second position calculating unit wherein a mirror disposed on a side surface of the stage is irradiated with a laser beam, and the position of the stage is calculated based on reflection light of the laser beam. Consequently, the inclination of the mirror disposed on the stage can be calculated based on errors in the respective positions calculated by the first position calculating unit and the second position calculating unit. Furthermore, electron beams can be precisely exposed by controlling deflection of the electron beams based on the calculated mirror inclination or the like and correcting an error in movement of the stage due to the mirror inclination or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an electron beam exposure apparatus for exposing a wafer with an electron beam. In particular,
The present invention relates to an electron beam exposure apparatus capable of controlling a deflection direction of an electron beam with high accuracy.

[0002]

2. Description of the Related Art In an electron beam exposure apparatus, a mirror provided on a side surface of a stage is irradiated with laser light, and a distance from a measurement point to the stage is calculated based on a reflected light of the laser light on the mirror. The stage was moved based on the distance. For example, when it is desired to move the stage in a direction parallel to the side surface on which the mirror is provided, the stage is moved so that the distance calculated based on the reflected light of the laser light maintains a constant value. However, when the side surface on which the mirror is provided and the mirror are not arranged in parallel, that is, when the mirror and the side surface have an inclination, the inclination causes the target position to move the stage, An error occurs between the actual position and the actually moved position. Since the mirror is installed on the side surface of the stage with a screw or the like, the tilt is caused by the degree of screw tightening or the like, and it is difficult to completely eliminate the tilt. Since an error occurs between the target position and the actual position, an exposure pattern shift occurs when a predetermined pattern is exposed on a wafer with an electron beam. For this reason, it is necessary to correct the error of the movement position due to the inclination of the mirror and expose the wafer.
In a conventional electron beam exposure apparatus, a pattern is actually exposed on a wafer, the inclination of a mirror in an exposure area is detected based on a relative positional shift of the exposed pattern, the deflection amount of the electron beam is corrected, and the stage movement position is adjusted. Was corrected.

[0003]

However, in the conventional electron beam exposure apparatus, it is necessary to actually expose the pattern on the wafer in order to detect the inclination of the mirror, which is costly and time-consuming. Further, since the inclination of the mirror is detected from the actually exposed exposure pattern, the inclination of the mirror outside the exposure area cannot be detected.

Accordingly, an object of the present invention is to provide an electron beam exposure apparatus that can solve the above-mentioned problems. This object is achieved by a combination of features described in independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0005]

According to a first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a wafer with an electron beam, wherein the electron gun generates an electron beam. And a deflector for deflecting the electron beam to a desired position on the wafer, a stage having a mirror substantially perpendicular to a plane substantially perpendicular to the direction of irradiation of the electron beam, mounting the wafer, and moving the plane. A stage driving unit for moving the stage, and a mark member for detecting the position of the stage, which is provided on a surface of the stage to which the electron beam is irradiated, and which is irradiated with the electron beam. A radiated electron detector that detects the amount of electrons emitted from the mark member by the electron beam and outputs a detection signal corresponding to the amount of electrons; and a stage position based on the detected signal. A first position calculation unit that calculates the position of the stage, a laser light irradiation unit that irradiates the mirror with laser light, a second position calculation unit that calculates the position of the stage based on the reflected light of the laser light from the mirror, and a first position. The relative position of the stage calculated by the first calculator at a second position different from the first position, based on the position of the stage calculated by the first calculator, and the second calculation at the first position. A mirror that calculates an inclination between the mirror and the direction in which the stage should be moved, based on a difference between the second position and the relative position of the stage calculated by the second calculation unit based on the position of the stage calculated by the unit. An electron beam exposure apparatus comprising: a tilt calculating unit.

The stage has two mirrors perpendicular to each other in a plane substantially perpendicular to the plane. The stage is movable in a direction substantially parallel to the two mirrors. Are irradiated with laser light, and the second
The position calculation unit calculates the position of the stage based on the respective reflected lights of the laser light applied to the two mirrors, and the mirror tilt calculation unit calculates each of the two mirrors and the direction in which the stage should move. The slope may be calculated. Further, the deflector may deflect the electron beam based on the inclination between the mirror calculated by the mirror inclination calculating unit and the direction in which the stage should move, and expose the wafer.

The laser beam irradiator irradiates one mirror with a plurality of laser beams including two laser beams having different positions in the direction of electron beam irradiation, and reflects a plurality of laser beams reflected by the mirror. Further, based on the, further comprising a vertical tilt calculating unit that detects the tilt of the mirror with respect to the irradiation direction of the electron beam, the deflector, the vertical tilt calculating unit has detected,
The wafer may be exposed further based on the inclination of the mirror with respect to the irradiation direction of the electron beam. The electron beam exposure apparatus according to claim 3, wherein: The stage has a plurality of mark members having different heights in a direction in which the electron beam is irradiated on a surface to which the electron beam is irradiated. The deflector further comprises a deflection amount calculating means for calculating a deflection amount of the electron beam on the member, wherein the deflector further comprises an electron beam deflection device based on the deflection amount of each mark member and the thickness of the wafer in the irradiation direction of the electron beam. The beam may be deflected to expose the wafer.

The above summary of the present invention does not list all of the necessary features of the present invention, and sub-combinations of these features may also be included in the present invention.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and are described in the embodiments. Not all combinations of features are essential to the solution of the invention.

FIG. 1 shows an example of an electron beam exposure apparatus 100 which is an electron beam processing apparatus according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on a wafer with an electron beam, and a control system 140 for controlling the operation of each component of the exposure unit 150.

The exposure unit 150 illuminates the inside of the housing 10 with an electron beam irradiation system 110 for irradiating a predetermined electron beam, and determines whether or not to irradiate the wafer 64 with the electron beam irradiated from the electron beam irradiation system 110. Shot control system 11 to be controlled
2 and an electron optical system including a wafer projection system 114 for deflecting the electron beam to a predetermined region of the wafer 64 mounted on the stage plate 300 and adjusting the size of an image of a pattern transferred to the wafer 64. Prepare.

The electron beam irradiation system 110 has a first electron lens 14 for determining the focal position of the electron beam by the electron gun 12 for generating the electron beam, and a rectangular opening (slit) for passing the electron beam. Slit part 1
6. Since the electron gun 12 takes a predetermined time to generate a stable electron beam, the electron gun 12
An electron beam may always be generated during the exposure processing period. In FIG. 1, the optical axis of the electron beam when the electron beam emitted from the electron beam irradiation system 110 is not deflected by the electron optical system is represented by a chain line A.

The shot control system 112 has a blanking electrode 18 and a round aperture section 20. The round aperture section 20 has a circular opening (round aperture). The blanking electrode 18 can turn on / off the electron beam synchronously at a high speed, and specifically has a function of deflecting the electron beam so as to hit the outside of the round aperture. That is, the blanking electrode 18 can prevent the electron beam from traveling downstream from the round aperture section 20 in the traveling direction of the electron beam. Since the electron gun 12 always emits an electron beam during the exposure processing period, the blanking electrode 18
Is to deflect the electron beam so that the electron beam does not travel downstream from the round aperture unit 20 when changing the pattern to be transferred to the wafer 64 and further when changing the area of the wafer 64 where the pattern is exposed. Is desirable.

The wafer projection system 114 has a second electron lens 22, a third electron lens 24, a main deflector 26, and a sub deflector 28. The second electronic lens 22 adjusts the reduction ratio of the pattern image transferred to the wafer 64 with respect to the pattern formed by the slit 16. The third electronic lens 24 functions as an objective lens. The main deflector 28 and the sub deflector 30 deflect the electron beam so that a predetermined area on the wafer 64 is irradiated with the electron beam. In the present embodiment, the main deflector 28 is used to deflect the electron beam between subfields including a plurality of areas (shot areas) that can be irradiated with one shot of the electron beam, and the sub deflector 30 is used to deflect the subfield. Is used for deflection between shot areas in.

The exposure unit 150 is provided with a predetermined flat surface 316.
, A stage driving unit 312 that moves the stage 310 on a predetermined plane 316, a laser beam irradiating unit that irradiates a laser beam to a mirror provided on a side surface of the stage, and detects the position of the stage. 318, and a radiated electron detector 320 that detects electrons reflected from the electron gun 12 and reflected on the wafer, the mark member 318, and the like. The wafer whose pattern is to be exposed is placed on stage 310.

The control system 140 includes an overall control unit 130, a deflection control unit 132, an electron lens control unit 134, a wafer stage control unit 136, a first position calculation unit 138, a second position calculation unit 142, A mirror tilt calculator 144. First position calculator 138 and second position calculator 142
Calculates the position of the stage 310. The mirror tilt calculator calculates the tilt of the mirror provided on the side surface of the stage 310 based on the difference in the position of the stage 310 calculated by the first calculator 138 and the second position calculator 142. The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120. The deflection control unit 132 controls the blanking electrode 1
8, the main deflector 56 and the sub deflector 58 are controlled. The electronic lens control unit 134 controls a current supplied to the first electronic lens 14, the second electronic lens 22, and the third electronic lens 24. The wafer stage control unit 136 controls the stage 310 by the stage driving unit 312 of the stage device 300.
Is moved to a predetermined position.

An electron beam exposure apparatus 10 according to this embodiment
The operation of 0 will be described. On stage 310, a wafer to be subjected to exposure processing is mounted. The wafer stage control unit 136 moves the stage 310 by the stage driving unit 312 so that the region of the wafer 64 to be exposed is located near the optical axis A. Further, since the electron gun 12 always irradiates the electron beam during the exposure processing period, the deflection control unit 132 controls the deflection control unit 132 so that the electron beam passing through the opening of the slit unit 16 is not irradiated on the wafer 64 before the start of the exposure. The blanking electrode 18 is controlled.

After the shot control system 112 and the wafer projection system 114 are adjusted, the deflection control unit 132 stops the deflection of the electron beam by the blanking electrode 18. Thereby, the electron beam is irradiated on the wafer 64 as described below. The electron gun 12 generates an electron beam, and the first electron lens 14 adjusts the focal position of the electron beam to irradiate the slit portion 16. The electron beam that has passed through the opening of the slit portion 16 has a rectangular cross-sectional shape.

The electron beam that has passed through the slit 16 passes through a round aperture included in the round aperture 20, and the second electron lens 22 adjusts the reduction ratio of the pattern image. The electron beam is then transmitted to the wafer 64 by the main deflector 26 and the sub deflector 30.
It is deflected to irradiate the upper predetermined shot area. In the present embodiment, the main deflector 26 deflects the electron beam between subfields including a plurality of shot areas, and the sub deflector 28 deflects the electron beam between shot areas in the subfield. The electron beam deflected to a predetermined shot area is adjusted by the third electron lens 24 and irradiated on the wafer 64.

After a predetermined exposure time has elapsed, the deflection control unit 132 controls the blanking electrode 18 to deflect the electron beam so that the electron beam does not irradiate the wafer 64. By the above process, a pattern is exposed on a predetermined shot area on the wafer 64. In order to expose the pattern to the next shot area, the sub deflector 28
Adjusts the electric field so that the pattern image is exposed in the next shot area. Thereafter, the pattern is exposed to the shot area as described above. After exposing the pattern to all the shot areas to be exposed in the subfield,
The main deflector 26 adjusts the magnetic field so that the pattern can be exposed in the next subfield. Electron beam exposure apparatus 10
In the case of No. 0, a desired circuit pattern can be exposed on the wafer 64 by repeatedly executing this exposure processing.

The electron beam exposure apparatus 100, which is an electron beam processing apparatus according to the present invention, may be an electron beam exposure apparatus using a variable rectangle, or may use a blanking aperture array (BAA) device. An electron beam exposure apparatus may be used.

FIG. 2 is a block diagram showing an example of the configuration of the electron beam exposure apparatus 100 according to the present invention. The electron beam exposure apparatus 100 includes an electron gun 12 for irradiating an electron beam.
, A stage 310 on which a wafer is mounted, and a stage 31
Stage driving unit 312 for driving the stage 0
A mark member 318 for detecting the position of 0, a radiation electron detector 320 for detecting electrons emitted based on the electron beam, a deflector 40 for deflecting the electron beam emitted by the electron gun 12, and a stage A laser beam irradiating unit 314 for irradiating a mirror provided on the side surface with laser light, a first position calculating unit 138 and a second position calculating unit 144 for calculating the position of the stage 310, and a mirror installed on the side surface of the stage 310 And a mirror tilt calculator 144 for calculating the tilt of the mirror. 2 that have the same reference numerals as in FIG. 1 may have the same or similar functions and configurations as those described with reference to FIG. The components described with reference to FIG. 2 correspond to the overall control unit 1 described with reference to FIG.
30, deflection control unit 132, wafer stage control unit 136
May be controlled by

The electron gun 12 generates an electron beam and irradiates the stage 310 or the wafer with the electron beam. The deflector 40 changes the electron beam emitted from the electron gun 12 to a desired position. The deflector 40 may have the same or similar function and configuration as the main deflector 28 and the multiple deflector 30 described with reference to FIG. The electron beam emitted from the electron gun 12 is deflected by the deflector 40 and the mark member 31
8 is irradiated. The radiated electron detection unit 320 uses the electron beam irradiated on the mark
The amount of electrons emitted from 8 is detected. Further, the emitted electron detection unit 320 outputs a detection signal corresponding to the detected amount of electrons. The first position calculator 138 is configured to detect the emitted electron detector 32
The position of the stage 310 is calculated based on the detection signal output by the “0”. That is, the mark member 318 is attached to the stage 3
The position of the mark member 318 is calculated by an electron beam provided at a known position on the wafer 10 mounted on the stage 10 or the stage 310, and the position of the stage 310 is calculated based on the position of the mark member 318.

The stage driving section 312 is provided with a target position, and moves the stage 310 to the target position. The target position is given to the stage drive unit 312 by the wafer stage control unit 136 based on the pattern to be exposed on the wafer. The stage 310 has a mirror substantially perpendicular to a plane substantially perpendicular to the electron beam irradiation direction, mounts the wafer, and moves on a plane substantially perpendicular to the electron beam irradiation direction.
The laser light irradiation unit 314 irradiates the mirror with laser light. The second position calculation unit 142 calculates the position of the stage 310 based on the reflected light of the laser light on the mirror.
The second position calculation unit 142 calculates the distance from the measurement point to the mirror based on the reflected light of the laser light, and calculates the position of the stage 310 based on the calculated distance. It is preferable that the stage drive unit 312 and the second position calculation unit 142 include a laser light interferometer that detects reflected light of the laser light. The stage driving unit 312 includes a second position calculating unit 142
Is moved based on the distance to the mirror or the position of the stage 310 calculated by. For example, while the stage 310 is moving,
The mirror is irradiated with laser light. At this time, the position of the mirror irradiated with the laser beam changes as the stage 310 moves. The second position calculation unit 142 calculates the position of the stage 310 based on the reflected light of the laser beam, and the stage driving unit 312 compares the position of the stage 310 calculated by the second position calculation unit 142 with the target position. Then, the stage 310 is moved to the target position.

The mirror tilt calculator 144 calculates a first position at a second position different from the first position with reference to the position of the stage 310 calculated by the first position calculator 138 at the first position where the stage moves. The relative position of the position of the stage 310 calculated by the position calculation unit 138 and the stage 310 calculated by the second position calculation unit 142 at the first position
Based on the difference between the second position and the relative position of the stage 310 calculated by the second position calculation unit 142 at the second position, the inclination between the mirror and the direction in which the stage 310 should move is calculated. That is, the mirror tilt calculator 144
Calculates the error between the position where the stage 310 has moved and the target position caused based on the tilt of the mirror and the first position calculation unit 13.
8 and the second position calculation unit 142 calculate based on the first position and the second position calculated respectively, and calculate the tilt of the mirror based on the error. Here, stage 310
Is the direction in which the stage 310 should move toward the target position given to the stage drive unit 312. Calculating based on the position of the stage 310, the mirror tilt calculator 144 may calculate the tilt between the mirror and the surface of the stage on which the mirror is provided, based on the tilt between the mirror and the direction in which the stage should move. . Also,
The mirror tilt calculator 144 calculates the position of the stage 31 based on the position of the stage 310 calculated by the first position calculator 138.
0 calculates the direction in which the stage 310 has moved, calculates the inclination between the direction in which the stage 310 has moved, and the direction in which the stage 310 should move, and calculates the inclination between the mirror and the direction in which the stage should move based on the inclination. May do it.

The stage 310 may have two mirrors perpendicular to each other in a plane substantially perpendicular to the electron beam irradiation direction. For example, mirrors may be provided on two adjacent sides of the stage 310. In this case, the stage 310
Is movable in a direction substantially parallel to the two mirrors, the laser light irradiation unit 314 irradiates the laser light to each of the two mirrors, and the second position calculation unit 142 irradiates the two mirrors. The position of the stage 310 is calculated based on each reflected light of the laser light. Mirror tilt calculator 14
4 calculates the respective tilts of the two mirrors and the direction in which the stage 310 should move.

The deflector 40 deflects the electron beam based on the tilt between the mirror calculated by the mirror tilt calculator 144 and the direction in which the stage 310 should move, and exposes the wafer. That is, the deflector 40 irradiates the pattern with the electron beam to the position where the error of the stage movement position caused by the tilt of the mirror is corrected, and exposes the wafer.

According to the electron beam exposure apparatus 100 described above, since it is not necessary to actually expose the wafer,
The inclination of the mirror can be easily calculated. In addition, the electron beam is deflected based on the calculated mirror tilt,
The wafer can be exposed with high accuracy.

The laser beam irradiating section 314 has a different position in the electron beam irradiation direction with respect to one mirror.
A plurality of laser beams including one laser beam are irradiated, and the electron beam exposure apparatus 100 calculates a vertical tilt for detecting the tilt of the mirror with respect to the irradiation direction of the electron beam based on the reflected light of the plurality of laser beams reflected by the mirror. A portion 148 may be further provided. In this case, the deflector 40 exposes the wafer based on the tilt of the mirror with respect to the irradiation direction of the electron beam detected by the vertical tilt calculator 148. That is,
The tilt of the wafer mounted on the stage 310 with respect to the irradiation direction of the electron beam is calculated based on the tilt of the mirror, and the electron beam is deflected based on the tilt of the wafer to expose the wafer. According to the electron beam exposure apparatus 100 described above, the wafer is exposed by deflecting the electron beam based on the inclination of the mirror with respect to the irradiation direction of the electron beam and the inclination of the mirror and the stage with respect to the direction to be moved. The wafer can be well exposed.

The stage 310 has a plurality of mark members having different heights in a direction in which the electron beam is irradiated on the surface to which the electron beam is irradiated. Irradiate the mark member,
A deflection amount calculating means for calculating a deflection amount of the electron beam in each mark may be further provided. In this case, the deflector 40 deflects the electron beam based on the amount of deflection of each mark member and the thickness of the wafer mounted on the stage 310 in the irradiation direction of the electron beam, and exposes the wafer. That is, the wafer is exposed by correcting the error of the exposure position of the electron beam caused by the thickness of the wafer. According to the electron beam exposure apparatus 100 described above, the wafer is exposed by deflecting the electron beam based on the thickness of the wafer, the inclination of the mirror with respect to the irradiation direction of the electron beam, and the inclination of the mirror with respect to the direction in which the stage is to be moved. Therefore, the wafer can be more accurately exposed.

FIG. 3 is an explanatory diagram of a method for calculating the inclination of the mirror 322. First, the position of the stage 310 at the first position is calculated. The first position calculator 138 calculates a first position of the stage 310 based on electrons emitted from the mark member 318 by an electron beam.
The second position calculation unit 142 calculates the first position of the stage 310 based on the reflected light of the laser light irradiated on the mirror 322 by the laser light irradiation unit 314. At this time, the laser light irradiation unit 314 irradiates the position 200 of the mirror 322 with laser light.

Next, the stage driving unit 312
The position of the stage 310 at the second position where the stage 10 has been moved is calculated. In this example, the stage driving unit 312
Is a position obtained by moving the stage 310 by Δy in the direction indicated by the arrow, that is, in a direction substantially perpendicular to the direction in which the laser light irradiation unit 314 irradiates the laser light. When the stage driving unit 312 moves the stage 310, the stage driving unit 312 moves the stage 310 based on the distance to the mirror calculated by the second position calculation unit 142 or the position of the stage 310.
When the stage 310 is to be moved in the direction shown in this example, the stage driving unit 312
The stage 310 is moved so that the distance to the mirror calculated by the formula (2) maintains a constant value. In this example, the mirror 32
Since the reflection surface for reflecting the second laser light has an inclination with respect to the direction in which the stage 310 should move, the stage driving unit 312 determines the direction in which the stage 310 should move, that is, the laser light irradiation unit 314 emits the laser light. The stage 310 is moved in a direction substantially perpendicular to the irradiation direction and in a direction having an inclination based on the inclination of the mirror.

At the second position where the stage driving section 312 has moved the stage 310, the first position calculating section 138
Calculates the second position of the stage 310 based on the electrons emitted from the mark member 318 by the electron beam. The second position calculation unit 142 includes a laser beam irradiation unit 314
Calculates the first position of the stage 310 based on the reflected light of the laser light applied to the mirror 322. At this time, the laser light irradiation unit 314 irradiates the laser light to a position 202 that is approximately Δy away from the position 200 of the mirror 322.

The stage drive section 312 moves the stage 310 based on the position of the stage 310 calculated by the second position calculation section 142. Therefore, at the second position, the stage drive section 312 calculates the position of the stage 310 calculated by the second position calculation section 142. The second position is substantially the same as the target position given to the stage driving unit 312. At the second position, the second position of the stage 310 calculated by the first position calculator 138 is the second position.
The second position and the target position calculated by the position calculation unit 142 have an error based on the tilt of the mirror. For example, when the first position calculated by the first position calculation unit 138 and the first position calculated by the second position calculation unit 142 are the same position in the first position, in this example, The second position calculated by the first position calculator 138 is the mirror 322
There is an error between the target position and the second position calculated by the second position calculator 142 by the distance Δx between the positions 200 and 202 in the direction in which the laser light is irradiated. The mirror tilt calculator 144 calculates the tilt between the mirror and the direction in which the stage 310 should move based on Δy and Δx.

In this example, at the first position, the first position calculated by the first position calculator 138 is the same as the second position calculated by the second position calculator 142. In another example, when there is an error between the first position calculated by the first position calculation unit 138 and the second position calculated by the second position calculation unit 142, the mirror inclination calculation unit 144
Is the position of the stage 310 calculated by the first position calculator 138 at a second position different from the first position with reference to the position of the stage 310 calculated by the first position calculator 138 at the first position. The difference between the relative position and the relative position of the stage 310 calculated by the second position calculation unit 142 at the second position with reference to the position of the stage 310 calculated by the second position calculation unit 142 at the first position. Based on this, the inclination between the mirror 322 and the direction in which the stage 310 should move is calculated. The deflector 40 is based on the inclination between the mirror 322 and the direction in which the stage 310 should move,
The pattern is exposed on the wafer by deflecting the electron beam.

FIG. 4 is an explanatory diagram in the case where a plurality of mark members 318 having different heights in the direction in which the electron beam is irradiated are provided on the stage 310. Deflection amount calculation means 1
46 calculates the amount of deflection of the electron beam in each of the plurality of mark members 318. That is, in each of the plurality of mark members 318 having different heights, the radiated electron detection unit 320 detects an error between a position where the electron beam is deflected by the deflector 40 and the position where the electron beam is irradiated. It is calculated based on the amount of electrons to be performed. Deflector 4
0 is the deflection amount calculated for each of the plurality of mark members 318 having different heights, the height of each of the mark members, and the thickness of the wafer on which the desired pattern is to be exposed in the direction in which the electron beam is irradiated. The electron beam is deflected based on the tilt between the mirror 322 calculated by the mirror tilt calculator 144 and the direction in which the stage 310 should move.

The laser beam irradiating section 314 may irradiate one mirror 322 with a plurality of laser beams including two laser beams having different positions in the electron beam irradiation direction. The vertical tilt calculator 148 calculates the optical path length of each of the two laser lights based on the reflected light of the two laser lights having different positions in the irradiation direction of the electron beam, and calculates the optical path length difference between the two laser lights. Is calculated with respect to the direction in which the mirror 322 irradiates the electron beam. The vertical tilt calculator 148 may include a laser interferometer that measures the optical path length of the laser light. Further, as shown in FIG. 4, the laser beam irradiation unit 314 includes a plurality of mirrors 322 provided on adjacent side surfaces of the stage 310, each including two laser beams having different positions in the electron beam irradiation direction. And the inclination of each mirror 322 with respect to the irradiation direction of the electron beam may be calculated.

The mirror tilt calculating section 144 includes a plurality of mirrors 32 provided on the adjacent side surface of the stage 310.
The inclination between each of the mirrors 2 and the direction in which the stage 310 should move may be calculated. In this case, the mirror tilt calculator 144 calculates the tilt of each mirror 322 by the method described with reference to FIGS.

Although the present invention has been described with reference to the embodiment, the technical scope of the present invention is not limited to the scope described in the above embodiment. It is apparent to those skilled in the art that various changes or improvements can be made to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

[0040]

As is clear from the above description, according to the present invention, the inclination of the mirror can be easily calculated. Further, it becomes possible to deflect the electron beam based on the calculated inclination of the mirror or the like, and to accurately expose a desired pattern on the wafer.

[Brief description of the drawings]

FIG. 1 shows an example of an electron beam exposure apparatus 100 which is an electron beam processing apparatus according to an embodiment of the present invention.

FIG. 2 is a block diagram showing an example of a configuration of an electron beam exposure apparatus 100 according to the present invention.

FIG. 3 is an explanatory diagram of a method of calculating a tilt of a mirror 322.

FIG. 4 is an explanatory diagram in a case where a plurality of mark members 318 having different heights in a direction in which an electron beam is irradiated are provided on a stage 310.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Housing | casing, 12 ... Electron gun 14 ... 1st electron lens, 16 ... Slit part 18 ... Blanking electrode, 20 ... Round aperture part 22 ... 2nd electron Lens 24 24 Third electron lens 28 Main deflector 40 40 Deflector 100 Electron beam exposure device 110 Electron beam irradiation system 112 Shot control system 114 ... Wafer projection system 120 ... Individual control unit, 130 ... Overall control unit 132 ... Deflection control unit, 134 ... Electronic lens control unit 136 ... Wafer stage control unit, 138 ...・ First
Position calculating unit 140: control system, 142: second position calculating unit 144: mirror tilt calculating unit, 146: deflection amount calculating unit 148: vertical tilt calculating unit, 150: exposure System 310 ··· Stage 312 ··· Stage drive unit 314 ··· Laser irradiation unit 318 ··· Mark member 320 ··· Emitted electron detection unit 322 ··· mirror

Claims (5)

[Claims] 1. An electron beam exposure apparatus for exposing a wafer with an electron beam, comprising: an electron gun for generating the electron beam; a deflector for deflecting the electron beam to a desired position on the wafer; A mirror having a mirror substantially perpendicular to a plane substantially perpendicular to the beam irradiation direction, a stage for mounting the wafer, and moving the plane, a stage driving unit for moving the stage, A mark member provided on a surface to be irradiated with the electron beam, for irradiating the electron beam to detect a position of the stage, and radiating from the mark member by the electron beam irradiated to the mark member A radiated electron detector that detects the amount of electrons that have been output and outputs a detection signal corresponding to the amount of electrons; A first position calculator for calculating the position, a laser light irradiator for irradiating the mirror with laser light, and a second position calculator for calculating the position of the stage based on the reflected light of the laser light on the mirror. A position of the stage calculated by the first position calculator at a second position different from the first position, based on the position of the stage calculated by the first position calculator at the first position; A relative position and a relative position of the stage calculated by the second position calculator at the second position with reference to the position of the stage calculated by the second position calculator at the first position. Based on the difference
An electron beam exposure apparatus, comprising: a mirror tilt calculator for calculating a tilt between the mirror and a direction in which the stage is to be moved. 2. The stage has two mirrors perpendicular to each other in a plane substantially perpendicular to the plane; the stage is movable in a direction substantially parallel to the two mirrors; The light irradiation unit irradiates each of the two mirrors with laser light, and the second position calculation unit calculates the position of the stage based on the respective reflected lights of the laser light irradiated on the two mirrors. 2. The electron beam exposure apparatus according to claim 1, wherein the mirror tilt calculator calculates respective tilts of the two mirrors and a direction in which the stage should move. 3. The method according to claim 1, wherein the deflector deflects the electron beam based on a tilt between the mirror calculated by the mirror tilt calculator and a direction in which the stage is to be moved, and exposes the wafer. The electron beam exposure apparatus according to claim 1 or 2, wherein: 4. The laser beam irradiating unit according to claim 1, wherein the position of the electron beam irradiation direction differs with respect to one of the mirrors.
A vertical tilt calculator that irradiates a plurality of laser beams including one laser beam and detects a tilt of the mirror with respect to an irradiation direction of the electron beam based on reflected light of the plurality of laser beams reflected by the mirror. 4. The electron beam according to claim 3, wherein the deflector exposes the wafer based on a tilt of the mirror with respect to an irradiation direction of the electron beam, which is detected by the vertical tilt calculator. Exposure equipment. 5. The stage has, on a surface irradiated with the electron beam, a plurality of mark members having different heights in a direction in which the electron beam is irradiated; A deflection amount calculating unit configured to irradiate a member and calculate a deflection amount of the electron beam in each mark member, wherein the deflector includes a deflection amount in each of the marks and an irradiation direction of the electron beam on the wafer. The electron beam exposure apparatus according to claim 3, wherein the deflector deflects the electron beam to expose the wafer based on a thickness of the electron beam.