JP2002092970A - Sputtering apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering apparatus with which an optical information recording medium having excellent media characteristics is efficiently and stably produced at high speed. SOLUTION: On the front surface of a substrate holder, at least, one groove part is formed which makes a round in a peripheral direction with the center of disk substrate arrangement as a center and which has a structure where an acute angle which is made by 'a virtual tangential line on the circumference with the disk substrate arrangement center as a center' and 'a tangential line in the ridgeline of the groove part at the position of intersection with the virtual tangential line' is <=30 deg. in all positions. One or more gas flow passage 45 is arranged which leads from 'a wall surface constituting the groove part' to 'a part except the disk substrate arrangement surface of the baseboard holder'. In one embodiment, a thickness-reduced part is formed in a range which comprises the opposing surface of the information recording area of the disk substrate on the front surface of a substrate holder 37. A groove part 45a with a prescribed inner/outer diameter and a depth is formed in the thickness- reduced part and four through-holes 45b from the outer peripheral wall surface of the groove part to a substrate holder outer peripheral side surface are arranged at the four places obtained by dividing circumference into four parts.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a reflective layer and a recording film on a transparent substrate, and more particularly to a structure of a substrate holder for holding a substrate on which a film is to be formed during sputtering. As an application field of the present invention, optical disc media (CD-ROM, CD-R, CD-RW,
DVD etc.).

[0002]

2. Description of the Related Art In various types of optical disk media, a process of forming a reflective layer, a recording layer, a dielectric layer, or a protective layer by a sputtering apparatus is indispensable. For such film formation, for example, a single-wafer sputtering apparatus as shown in FIG. 6 is used. 1 is a load lock chamber, 2 is
Reference numerals 8 to 8 denote first to seventh deposition chambers, reference numeral 9 denotes a rotating shaft, reference numeral 37 denotes a substrate holder, and reference numeral 38 denotes a transfer arm in the sputtering apparatus. In the following description, for convenience,
“Substrate holder” may be described as “holder”.

[0003] In the sputtering apparatus, the disk substrate is held by the substrate holder through temporary exhaust in an "intermediate chamber between the atmosphere and vacuum for loading and unloading the substrate of the sputtering apparatus" (hereinafter referred to as a load lock chamber). After being formed around the film forming chamber where each constituent layer material is formed, the film is carried out through a venting step in the load lock chamber after the film formation is completed.

As a structure of a substrate holder, for example, as disclosed in Japanese Utility Model Laid-Open No. 4-137526,
A structure has been proposed in which a ventilation hole is provided on the disk substrate installation surface and a gas vent hole is provided in the substrate holder, and gas is exhausted from both holes. FIG. 7 shows this substrate holder structure. Reference numeral 20 denotes a vent hole, reference numeral 21 denotes a holder, reference numeral 22 denotes a substrate holder, and reference numeral 23 denotes a gas vent hole. This has been devised in consideration of the effect of evaporation of moisture from the disk substrate 31 and generation of gas on media characteristics.

However, in the above structure, it has been found that the presence of the air holes has a significant effect on the media characteristics. In particular, the influence on the media signal characteristics was large, and the disk substrate position corresponding to the ventilation hole showed a large variation.
This phenomenon becomes a serious problem when performing continuous high-speed film formation, when performing thick film formation, or when repeatedly forming two or more layers on the same substrate, and the like. When a thin substrate of 6 mm was used, it became a more serious problem. Also, depending on the conditions,
This effect was not limited to the change in signal characteristics, but also led to deformation of the disk substrate. It has been confirmed that this phenomenon caused by the ventilation holes occurs regardless of whether the substrate holder is brought into contact with the disk substrate.

In order to avoid or reduce such a problem, Japanese Patent Laid-Open Publication No. Hei 9-91766 discloses a method of holding a disk substrate of an optical recording medium on a disk-shaped holder and rotating the substrate together with the holder. In an apparatus for forming a film on the substrate by a vacuum thin film forming method, the substrate supporting portion of the holder is formed on a side opposite to the film forming surface of the substrate and for recording a substrate having grooves and / or pits formed in a radial direction. A method is disclosed that is provided only for the inner and outer peripheral portions of the substrate outside the region, and that the surface of the holder located between the substrate support portions on the inner and outer peripheral sides of the substrate facing the substrate is formed as a flat surface. ing.

In the present invention, as a countermeasure against the problem of the vent hole, a method of opening a gas vent hole at a position corresponding to the outside of the recording area of the disk substrate is proposed. This is effective only in a configuration in which a clearance is provided therebetween, and cannot be applied in a configuration in which a disc substrate and a substrate holder are brought into close contact. Further, only the gas vent hole having the above structure has insufficient exhaust efficiency of the space formed between the disk substrate and the substrate holder. When the disk substrate is introduced into the main vacuum chamber from the load lock chamber, the main vacuum is not applied. It is likely to reduce the degree of vacuum in the chamber.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate holder structure and a sputtering device structure capable of comprehensively solving the above problems, thereby improving the media characteristics. It is an object of the present invention to provide a sputtering apparatus capable of efficiently, stably, and efficiently producing an optical information recording medium having good quality.

[0009]

According to a first aspect of the present invention, in the optical information recording medium manufacturing process, the sputtering apparatus includes any one of a reflective layer, a recording layer, a protective layer, and a dielectric layer on a disk substrate. Alternatively, in a sputtering apparatus used for sputter deposition in which two or more layer configurations are combined to form a layer, a groove formed on the surface of the substrate holder in the circumferential direction around the disk substrate installation center, and A groove having a structure in which the acute angle between the "virtual tangent on the circumference centered on the disk substrate installation center" and the "tangent to the ridge of the groove at a position intersecting with the virtual tangent" is 30 degrees or less at all positions. And at least one gas flow passage extending from “the wall surface forming the groove” to “the portion other than the disk substrate placement surface of the substrate holder”.

[0010] According to a second aspect of the present invention, in the first aspect, the substrate holder is a "intermediate chamber between the atmosphere and vacuum for loading / unloading the substrate of the sputtering apparatus" (hereinafter referred to as a load lock chamber). In the state moved to the predetermined position, at least one vent gas introduction port for the load lock chamber and at least one flow path port formed in “a part other than the disk substrate placement surface of the substrate holder” are arranged near the same straight line. It is characterized by being made.

According to a third aspect of the present invention, in the first aspect, when the substrate holder is moved to a predetermined position in the load lock chamber, at least one vent gas introduction port into the load lock chamber is provided. At least one channel opening formed on a portion other than the disk substrate placement surface of the holder "is connected.

According to a fourth aspect of the present invention, in the first aspect, when the substrate holder is moved to a predetermined position in the load lock chamber, at least one vacuum exhaust port in the load lock chamber is provided. At least one channel opening formed in a portion other than the disk substrate disposition surface of the above) is arranged near the same straight line.

According to a fifth aspect of the present invention, in the first aspect, when the substrate holder is moved to a predetermined position in the load lock chamber, at least one evacuation port in the load lock chamber is provided. At least one channel opening formed on a portion other than the disk substrate arrangement surface of the above. "

According to a sixth aspect of the present invention, in the first aspect, one or more sputter process gas inlets are installed in an arbitrary film forming chamber of the sputtering apparatus, and the substrate holder is positioned at a predetermined position in the film forming chamber. In this state, at least one sputter process gas inlet is connected to at least one flow passage formed in a portion of the substrate holder other than the disk substrate placement surface.

According to a seventh aspect of the present invention, in the first aspect, at least one gas inlet of a different system from the sputter process gas is installed in an arbitrary film forming chamber of the sputtering apparatus, and the substrate holder is formed. At least one of the gas introduction ports and at least one flow path port formed in a portion other than the disk substrate placement surface of the substrate holder in a state where the gas introduction port is moved to a predetermined position in the membrane chamber is connected. Features.

According to an eighth aspect of the present invention, in the sputtering apparatus according to the sixth or seventh aspect, the flow rate of a gas supplied to a flow path opening formed in a portion other than the surface of the substrate holder on which the disk substrate is arranged is controlled to form the film. It is characterized in that the gas flow rate is increased for an arbitrary time after the completion of the film formation in the chamber.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to achieve the above object, according to the present invention, in a process for manufacturing an optical information recording medium, any one of a reflective layer, a recording layer, a protective layer, a dielectric layer and the like is formed on a disk substrate. Alternatively, in a sputtering apparatus used for sputter deposition in which two or more layer configurations are combined to form a layer, a groove formed on the surface of the substrate holder in the circumferential direction around the disk substrate installation center, and A groove having a structure in which the acute angle between the "virtual tangent on the circumference centered on the disk substrate installation center" and the "tangent to the ridge of the groove at a position intersecting with the virtual tangent" is 30 degrees or less at all positions. Was formed, and a sputtering apparatus provided with one or more gas flow paths leading from “the wall surface constituting the groove” to “the portion other than the disk substrate placement surface of the substrate holder” was configured. The groove shape in which the present invention is most effective is the case where the angle is 0 degree and the ridge line of the groove portion is concentric with the center of the disk substrate.

The first point of the present invention is that the above-mentioned groove is formed on the surface of the substrate holder, an opening is provided on the "wall surface constituting the groove", and the opening on the disk substrate facing surface of the substrate holder is formed. This is due to the lost structure. As a result, it was possible to eliminate the fluctuation of the media signal characteristics caused by the opening on the surface of the substrate holder. In addition, as a result of further study on the relationship between the fluctuation of the media signal characteristic and the surface of the substrate holder, the fluctuation was determined by the direction of the pickup in recording and reproduction on the medium, that is, the circumferential tangent direction of the disk substrate and the substrate holder. It is related to the angle formed by the tangent direction of the ridgeline such as a hole or a groove existing on the surface, and it is found that the angle becomes maximum when the angle is a right angle or close to a right angle, and becomes minimum at 0 degree. From these results, it has been found that disturbance of the media signal characteristics can be drastically reduced only when this angle is within a specific range (30 degrees or less), and the above-mentioned groove shape, which is the second point of the present invention, has been reached. Things.

This effect can be obtained not only when the media signal characteristics fluctuate, but also when performing continuous high-speed film formation, when performing thick film formation, or when repeatedly forming two or more layers on the same substrate. 0.6 used for DVD media
It also worked effectively in the case where the influence of the opening on the surface of the substrate holder affected the deformation of the substrate, such as when using a thin substrate of mm. It should be noted that, under remarkable conditions such as deformation of the substrate, a method in which a portion other than the groove is brought into close contact with the disk substrate was effective in reducing the deformation of the substrate.

When the disk substrate is carried into the sputtering apparatus, the gas flow path from the "wall surface forming the groove" to the "portion other than the disk substrate placement surface of the substrate holder" is provided in the load lock chamber. It functions as a vacuum exhaust path for a space formed therebetween, and the space can be efficiently evacuated. The gas discharged from the disk substrate can be efficiently exhausted by this exhaust.
In a configuration in which the portion other than the groove portion is in close contact with the disk substrate, the gas flow passage effectively functions as a vent gas introduction passage for avoiding vacuum suction of the disk substrate to the substrate holder when the substrate is carried out.

That is, by employing the above-described structure of the substrate holder, it is possible to realize a substrate holder structure which does not impair the media signal characteristics while having an exhaust or vent hole between the disk substrate and the substrate holder on the surface of the substrate holder. Was. As a result, it has become possible to efficiently and stably produce an optical information recording medium having good media characteristics.

A second point of the present invention is that at least one vent gas inlet for the load lock chamber is provided when the substrate holder is moved to a predetermined position in the load lock chamber. At least one flow path port formed in the "portion other than the arrangement surface" is arranged near the same straight line.

With the above structure, when the substrate is carried out, the vent gas for the load lock chamber is introduced into the flow path formed in the “portion other than the disk substrate placement surface of the substrate holder”, and the space between the disk substrate and the substrate holder is removed. , The pressure applied to the disk substrate surface during venting of the load lock chamber can be reduced.

Thus, for example, even when a substrate holder configured to be in close contact with the back surface of the disk substrate is used, it is possible to avoid the phenomenon of vacuum-adsorption of the substrate to be deposited on the substrate holder when the substrate is carried out. The substrate transfer can be stabilized. Further, in a state where the substrate holder has moved to a predetermined position in the load lock chamber, at least one vent gas inlet into the load lock chamber and at least one vent gas inlet formed in a portion other than the disk substrate placement surface of the substrate holder. By connecting the two flow path ports, the above-mentioned effect could be further enhanced.

A third point of the present invention is that, when the substrate holder is moved to a predetermined position in the load lock chamber, at least one vacuum exhaust port in the load lock chamber is connected to a portion other than the disk substrate placement surface of the substrate holder. At least one channel opening formed in the "portion" is arranged in the vicinity of the same straight line.

With the above structure, when the substrate is carried in, the vacuum exhaust of the closed space between the disk substrate and the substrate holder can be efficiently performed from the flow path port formed in the portion other than the disk substrate placement surface of the substrate holder. Now you can do it. As a result, not only can the gas released from the disk substrate be efficiently exhausted in the load lock chamber, but also the vacuum in the main vacuum chamber when the substrate is carried into the main vacuum chamber of the sputtering apparatus from the load lock chamber. It is possible to minimize the decrease in the degree, and to operate the sputtering apparatus stably even when the substrate is loaded and unloaded at high speed.

In a state where the substrate holder is moved to a predetermined position in the load lock chamber, the substrate holder is formed in at least one vacuum exhaust port in the load lock chamber and in "a part other than the disk substrate arrangement surface of the substrate holder". By connecting at least one flow path port, the above effect was further enhanced.

A fourth point of the present invention is that one or more sputter process gas inlets are installed in an arbitrary film forming chamber of a sputtering apparatus, and the substrate holder is moved to a predetermined position in the film forming chamber. At least one sputter process gas inlet is connected to at least one channel opening formed in "a part other than the disk substrate arrangement surface of the substrate holder".

With the above structure, a sputter process gas flows between the disk substrate and the substrate holder during film formation in an arbitrary film formation chamber, whereby the sputter process gas functions as a cooling medium for the disk substrate. The heat applied to the substrate by sputtering film formation can be reduced. As a result, it was possible to reduce the deformation of the disk substrate caused by the sputter deposition. Further, one or more gas inlets of a different system from the sputter process gas are installed in an arbitrary film forming chamber of the sputtering apparatus, and in a state where the substrate holder is moved to a predetermined position in the film forming chamber, at least one gas inlet is provided. By connecting the gas introduction port and at least one flow path port formed in the “portion other than the disk substrate placement surface of the substrate holder”, in addition to the above effect, the sputtering process gas is used as a cooling medium. It has become possible to use a different kind of gas as a cooling medium.

Further, in the above configuration, the flow rate of gas supplied to the flow path opening formed in the “portion other than the disk substrate placement surface of the substrate holder” is controlled, and an arbitrary time is set after completion of the film formation in the film formation chamber. It is also possible to increase the gas flow rate only, thereby improving the substrate cooling effect and reducing the substrate deformation related to sputter deposition.

[0031]

An embodiment of the present invention will be described with reference to the drawings. Embodiment 1 FIG. 6 (described above) is a plan view schematically showing the general structure of a general single-wafer sputtering apparatus for multilayer film formation.
FIG. 8 is a cross-sectional view showing the structure of a conventional substrate holder when the substrate holder is located in a load lock chamber. In FIG. 8, reference numeral 31 denotes a disk substrate, reference numeral 32 denotes a stack ring, reference numeral 33 denotes an inner peripheral mask, reference numeral 34 denotes an outer peripheral mask, reference numeral 35 denotes an electromagnet, reference numeral 36 denotes a substrate support for external transfer of a sputtering apparatus, reference numeral 39 denotes a magnet, Reference numeral 40 denotes an O-ring, reference numeral 41 denotes a casing of the sputtering apparatus, reference numeral 42 denotes a groove for avoiding a stack ring, reference numeral 44 denotes a digging portion, reference numeral 45 denotes a gas passage, reference numeral 46 denotes a joint, and reference numeral 47 denotes a substrate holder base.

FIG. 9 is a plan view showing the disk substrate mounting surface of the substrate holder. In the present embodiment, the sputter apparatus having the above configuration will be described as an example, but the present invention is not limited to this.

FIG. 1 shows an example in which the present invention is applied to the above substrate holder. FIG. 1A is a plan view of a substrate holder, and FIG.
(B) is a sectional view taken along line AB. Substrate holder 37
A 0.5 mm thick digging portion is formed on the front surface in a range including the opposing surface of the information recording area of the disk substrate, and a groove 45a having an inner radius of 28 mm, an outer radius of 38 mm, and a depth of 3 mm is formed in the digging portion. A through-hole 4 having a diameter of 2 mm communicating from the outer peripheral wall surface of the groove 45a to the outer peripheral side surface of the substrate holder 37.
5b is provided at four locations where the circumference is divided into four.

Using this substrate holder, film forming chambers 2 to 4
, A recording layer in the film forming chamber 5, a dielectric layer in the film forming chamber 6,
In the film forming chambers 7 and 8, the stacked film was formed in the order of the reflective layer. In addition,
The film forming material used was ZnS.SiO ₂ for the dielectric layer, AgInSbTe for the recording layer, and Al for the reflective layer. The total film thickness was set to 250 nm. A 0.6 mm thick polycarbonate substrate for DVD media was used as the disk substrate. Note that the configuration of the film forming chamber, the film forming material, the film thickness, and the disk substrate are not limited thereto.

For comparison, similar film-forming experiments were performed using the substrate holders shown in FIGS. 8 and 9 as an example of a conventional substrate holder. On the surface of this substrate holder, a position of a radius of 33 mm from the center of the disk
The four circular holes were formed at positions dividing the circumferential direction into four. In addition, on the surface of the substrate holder, a stolen portion having a thickness of 0.5 mm was formed in a range including the surface facing the information recording area of the disk substrate. The multilayer film was formed on the disk substrate through a series of steps of loading the substrate from the substrate loading / unloading chamber, forming a film in the deposition chambers 2 to 8, and transporting the substrate from the substrate loading / unloading chamber.

When the media signal characteristics of the produced media were evaluated, the media signal characteristics of the conventional substrate holder fluctuated at a position corresponding to a hole opened at a radius of 33 mm on the surface of the substrate holder.
In the substrate holder of the present invention, good media signal characteristics were obtained at all radial positions.

FIG. 2 shows the result of the representative / reflectance variation of the media signal characteristic at the position of 33 mm. Code 6
The graph indicated by 2 is that when the holder of the present invention is used, the graph indicated by reference numeral 63 is that when the conventional holder is used, and the reference numeral 64 is a signal fluctuation portion. Here, the representative characteristic in which the characteristic change is remarkable is shown, but similar results are obtained for other characteristic values.

On the other hand, in the holder of the present invention, the through hole formed on the surface of the substrate holder and extending from the wall surface of the groove to the outer peripheral side surface of the substrate holder has a disk substrate / portion when the substrate is loaded.
It functioned sufficiently as an exhaust port for evacuating the space between the substrate holders, and also functioned as a vent gas inlet when carrying out the substrate.

Embodiment 2 FIG. 3 shows another example of a substrate holder to which the present invention is applied. FIG. 3A is a plan view of the substrate holder, and FIG. 3B is a cross-sectional view taken along the line AB. The present embodiment is different from the first embodiment in that a disk substrate is held in close contact without providing a thinned portion on the surface of the substrate holder. The groove shape was the same as in Example 1. The basic configuration operation is the same as that of the first embodiment. When the media signal characteristics of the created media were evaluated,
Good characteristics were obtained in the same manner as described above.

In the holder of the present invention, as shown in FIG. 4, when the substrate holder is moved to a predetermined position in the load lock chamber, the vent gas inlet of the load lock chamber and one of the openings on the outer peripheral side surface of the substrate lock are closed. The load lock chamber was arranged so as to be near the same straight line, and the vacuum exhaust port of the load lock chamber and one of the outer peripheral side surfaces of the substrate holder were arranged so as to be near the same straight line. Reference numeral 50 denotes a gas flow path for supplying a vent gas, and reference numeral 51 denotes a gas flow path for evacuation.

Thus, when the load lock chamber is evacuated when the substrate is loaded into the sputtering apparatus, the disk substrate /
Evacuation of the space formed between the substrate holders can be performed more efficiently. As a result, not only can the gas released from the disk substrate be efficiently exhausted in the load lock chamber, but also the vacuum in the main vacuum chamber when the substrate is carried into the main vacuum chamber of the sputtering apparatus from the load lock chamber. It is possible to minimize the decrease in the degree, and to operate the sputtering apparatus stably even when carrying in / out the substrate at a high speed.

In the venting of the load lock chamber when the substrate is carried out of the sputtering apparatus, the vent formed in the space formed between the disk substrate and the substrate holder is preferentially ventilated. The applied pressure can be reduced. In the configuration in which the disk substrate is held in close contact with the substrate holder, vacuum suction of the disk substrate onto the substrate holder when the substrate is carried out poses a problem. However, the above structure can avoid this phenomenon.

In the holder according to the present invention, when the substrate holder is moved to a predetermined position in the load lock chamber, the vent gas inlet of the load lock chamber is connected to one of the openings on the outer peripheral side surface of the substrate holder. A method of arranging and arranging such that the vacuum exhaust port of the load lock chamber is connected to one of the outer peripheral side surfaces of the substrate holder was also implemented. With this structure, the above-mentioned effect can be improved. The connection method in this configuration is not particularly limited in the present invention.

Embodiment 3 FIG. 5 is a sectional view of a substrate holder. Reference numeral 52 denotes a sputter process gas introduction path, reference numeral 53 denotes a first connection port, and reference numeral 54 denotes a second connection port. This figure shows a state where the substrate holder has moved to a predetermined position in the film forming chamber. In this example, the substrate holder of Example 1 was used. Note that the configuration of the connecting portion is not limited to this, and various types of structures are obtained depending on the structure of the film forming chamber of various sputtering devices.

All the substrate holders and the film forming chambers have this structure, the dielectric layers are formed in the film forming chambers 2 to 4, the recording layer is formed in the film forming chamber 5, the dielectric layer is formed in the film forming chamber 6, and the film forming chambers 7 and 8 are formed. , A laminated film was formed in the order of the reflective layer. The film forming material is ZnS.
SiO ₂ , AgInSbTe for the recording layer, and Al for the reflective layer were used. The total film thickness was set to 400 nm. A 0.6 mm thick polycarbonate substrate for DVD media was used as the disk substrate.
The structure of the film forming chamber, the film forming material, the film thickness, and the disk substrate are not limited to these.

At the time of film formation in each film formation chamber, 10 times
Ar was supplied at a flow rate of ＳＣ20 SCCM from the sputter process gas introduction path to perform sputter deposition, and the Ar gas flow rate in all deposition chambers was controlled at 500 SCCM for 3 seconds after the end of sputtering in each chamber. The method for controlling the flow rate of the Ar gas and the time for flowing the Ar gas after the end of sputtering are merely examples, and the present invention is not limited to this.

By increasing the flow rate of the Ar gas, the cooling effect can be enhanced, and the maximum effect can be obtained when the maximum flow rate is set within the range of the exhaust capacity of the vacuum pump. In addition, the cooling efficiency can be increased by increasing the flow time of the Ar gas after the end of the sputtering by increasing the flow rate of the Ar gas.

For comparison, sputter deposition was performed even with the first connection port 53 and the second connection port 54 removed. At this time, at the time of film formation in each film forming chamber, 10 to 20 S
Ar at a flow rate of CCM was only supplied from the sputter process gas introduction path 52 as a sputter process gas.
As a result, in the comparative example, the maximum value of the mechanical characteristics R-Tilt of the disk substrate in the disk surface reached twice, whereas in the configuration to which the present invention was applied, the flow was performed after the sputter deposition. It was reduced to one degree by the cooling effect of Ar gas.

On the other hand, a comparative experiment was conducted also in a case where a gas supply port of a different system from the sputtering process gas was separately provided in the film forming chamber and used as the second connection port 54 in the above configuration. At this time, He is used as a gas supplied from the second connection port 54, and 500 S only after the film formation in each film formation chamber is completed.
Only CCM was supplied for 3 seconds. As a result, the substrate deformation reducing effect is improved as compared with the case where Ar gas is used, and R-Til is reduced.
The maximum value of t in the disk surface was reduced to 0.7 degrees.

[0050]

As is apparent from the above description, the present invention is configured as described above, and has the following effects. According to the first aspect of the present invention, it is possible to realize a substrate holder structure which has an exhaust or vent hole between the disk substrate and the substrate holder on the surface of the substrate holder but does not impair the media signal characteristics. This makes it possible to efficiently and stably produce an optical information recording medium having good media characteristics. In a configuration in which a portion other than the predetermined groove portion is brought into close contact with the disk substrate, the predetermined gas flow path effectively functions as a vent gas introduction path for avoiding vacuum suction of the disk substrate to the substrate holder when the substrate is carried out.

According to the second aspect of the present invention, when the substrate is carried out, the vent gas for the load lock chamber is introduced into the flow path formed in the "portion other than the surface of the substrate holder on which the disk substrate is disposed", and the space between the disk substrate and the substrate holder is removed. , The pressure applied to the disk substrate surface during venting of the load lock chamber can be reduced. Thus, for example, even when a substrate holder configured to be in close contact with the back surface of the disk substrate is used, it is possible to avoid the vacuum suction phenomenon of the substrate to be deposited on the substrate holder when the substrate is unloaded, and Stabilization can be achieved. According to the structure of the third aspect, this effect can be further enhanced.

According to the fourth aspect of the present invention, when the substrate is carried in, the vacuum evacuation of the closed space between the disk substrate and the substrate holder is efficiently performed through the flow path opening formed in the portion other than the disk substrate placement surface of the substrate holder. Will be able to do it. As a result, not only can the gas released from the disk substrate be efficiently exhausted in the load lock chamber, but also the vacuum in the main vacuum chamber when the substrate is carried into the main vacuum chamber of the sputtering apparatus from the load lock chamber. Can be minimized, and high-speed
It is possible to stably operate the sputtering apparatus even when unloading is performed. According to the structure of claim 5, this effect can be further enhanced.

According to the sixth aspect of the present invention, in forming a film in an arbitrary film forming chamber, a sputter process gas flows between the disk substrate and the substrate holder so that the sputter process gas serves as a cooling medium for the disk substrate. Functioning, it is possible to reduce heat applied to the substrate by sputtering film formation. Thus, it is possible to reduce the deformation generated on the disk substrate due to the sputter deposition. According to claim 7, in addition to this effect, it is possible to use a gas different from the sputter process gas as the cooling medium as the cooling medium.

According to the eighth aspect of the present invention, the substrate cooling effect according to the fifth and sixth aspects can be improved, and the substrate deformation related to the sputter deposition can be further reduced.

[Brief description of the drawings]

FIGS. 1A and 1B show a substrate holder according to a first embodiment of the present invention, wherein FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AB.

FIG. 2 is a graph showing performance comparison test results between the holder of FIG. 1 and a conventional holder.

3A and 3B show a substrate holder according to a second embodiment of the present invention, wherein FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view taken along line AB.

FIG. 4 is a cross-sectional view showing an example of an arrangement state of the holder of FIG.

FIG. 5 is a sectional view showing a substrate holder according to a third embodiment of the present invention.

FIG. 6 is a schematic plan view showing a configuration of a general single-wafer sputtering apparatus for multilayer film formation for producing various optical disk media according to a conventional example.

FIG. 7 is a sectional view showing a substrate holder structure disclosed in Japanese Utility Model Laid-Open No. 4-137526.

FIG. 8 is a cross-sectional view illustrating a structure of a conventional substrate holder when the substrate holder is located in a load lock chamber.

FIG. 9 is a plan view showing a disk substrate installation surface of a conventional substrate holder.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Load lock chamber 2-8 Film-forming chamber (1st film-forming chamber-7th film-forming chamber) 9 Rotating shaft 20 Vent hole 21 Holder 22 Substrate holding 23 Gas vent hole 31 Disk substrate 32 Stack ring 33 Inner circumference mask 34 Outer circumference Mask 35 Electromagnet 36 Sputtering apparatus external transfer substrate support 37 Substrate holder 38 Sputtering apparatus internal transfer arm 39 Magnet 40 O-ring 41 Sputtering apparatus housing 42 Stack ring avoiding groove 44 Meat part 45 Gas flow path 45a Groove part 45b Through hole 46 Joint 47 Substrate holder base 50 Gas flow path for vent gas supply 51 Gas flow path for evacuation 52 Sputtering process gas introduction path 53 First connection port 54 Second connection port

Claims (8)

[Claims] In a manufacturing process of an optical information recording medium, any one of a reflective layer, a recording layer, a protective layer, a dielectric layer, or the like, or a combination of two or more of the above-described layer configurations is laminated on a disk substrate. In a sputtering apparatus used for film formation, a groove formed on the surface of the substrate holder in the circumferential direction around the center of the disk substrate is formed by a virtual tangent on a circumference centered on the center of the disk substrate. And at least one groove having a structure in which the acute angle formed by "the tangent of the ridge of the groove at the position intersecting with the virtual tangent" is 30 degrees or less at all positions, and "the wall forming the groove" A sputter apparatus comprising one or more gas flow paths communicating from ") to" a part other than the disk substrate arrangement surface of the substrate holder ". 2. A state in which the substrate holder is moved to a predetermined position in an “intermediate chamber between the atmosphere and vacuum for loading / unloading a substrate of a sputtering apparatus” (hereinafter referred to as a load lock chamber). 2. The apparatus according to claim 1, wherein at least one vent gas introduction port and at least one flow path port formed in a portion other than the surface of the substrate holder on which the disk substrate is disposed are arranged on the same straight line.
2. The sputtering apparatus according to 1. 3. In a state where the substrate holder has been moved to a predetermined position in the load lock chamber, at least one vent gas inlet into the load lock chamber and a portion other than the disk substrate placement surface of the substrate holder are formed. The sputter apparatus according to claim 1, wherein at least one flow path port is connected. 4. In a state where the substrate holder has moved to a predetermined position in the load lock chamber, at least one vacuum exhaust port in the load lock chamber and at least a portion formed on a portion other than the disk substrate placement surface of the substrate holder. 2. The sputtering apparatus according to claim 1, wherein one flow path port is arranged near the same straight line. 5. When the substrate holder is moved to a predetermined position in the load lock chamber, at least one vacuum exhaust port in the load lock chamber and at least a portion formed on a portion other than the disk substrate placement surface of the substrate holder. The sputtering apparatus according to claim 1, wherein one flow path port is connected. 6. At least one sputter process gas inlet is provided in an arbitrary film forming chamber of a sputtering apparatus, and at least one sputter process gas is introduced while the substrate holder is moved to a predetermined position in the film forming chamber. 2. The sputtering apparatus according to claim 1, wherein the opening is connected to at least one flow path opening formed in "a portion other than the disk substrate arrangement surface of the substrate holder". 7. At least one gas inlet of a different system from the sputter process gas is installed in an arbitrary film forming chamber of a sputtering apparatus, and at least a gas inlet is provided in a state where the substrate holder is moved to a predetermined position in the film forming chamber. 2. The sputtering apparatus according to claim 1, wherein one gas introduction port is connected to at least one flow path port formed in "a part other than the surface of the substrate holder on which the disk substrate is arranged". 8. A gas flow supplied to a flow path opening formed in a portion other than the disk substrate arrangement surface of the substrate holder, and the gas flow is increased by an arbitrary time after completion of film formation in the film formation chamber. 8. The sputtering apparatus according to claim 6, wherein the sputtering is performed.