JP2002082064A - Determining device and method for defective wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a determining device and method for a defective wafer capable of positively determining flaws and fouling which should be considered as defective. SOLUTION: By providing a means 21 providing determination of defectives by using references in accordance with the type of the flaws or the fouling, accuracy of the determination of defectives can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for judging a defective wafer based on scratches and dirt on the surface of a silicon wafer. About.

[0002]

2. Description of the Related Art In a silicon wafer manufacturing process,
A silicon wafer cut out from a silicon ingot pulled up by a CZ (Czochralski) method or the like is subjected to a lapping process using a polishing liquid containing a polishing agent having a fine particle diameter, so that the surface is mirror-finished. Finished.

[0003] After the silicon wafer thus finished is subjected to a cleaning process, it is subjected to a visual inspection of the surface of an operator, and only those wafers judged to be free from scratches and dirt are shipped as non-defective products. I have.

[0004]

By the way, surface inspection by human eyes has not been standardized in terms of its method and criteria, and is insufficient in terms of improving customer satisfaction.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to judge a defective wafer which can reliably detect a flaw or a dirt which should be regarded as defective in accordance with its characteristic amount. It is to provide an apparatus and a method.

[0006]

SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, a determination apparatus according to the present invention uses a method for detecting a flaw extracted based on distribution information of fine point defects (LPD) on a silicon wafer surface. The present invention is characterized in that it is a determination apparatus and a determination method including means for detecting the types thereof from the characteristic amounts of dirt and determining a defective wafer based on a criterion corresponding to these characteristic amounts.

More specifically, the present invention provides the following determination device and determination method.

(1) A wafer having scratches and dirt on the surface is allowed as a product based on information on the scratches and dirt on the wafer surface which is supplied from a wafer surface inspection apparatus that detects scratches and dirt on the wafer surface based on the LPD map. A determination device for determining whether or not to perform the processing, wherein input means for capturing information on the scratches and dirt on the wafer supplied from the wafer surface inspection device, and a plurality of pieces of information on the scratches and dirt on each wafer. Storage means capable of accumulating wafers; detecting the type and degree of the flaw from the flaw characteristic amount in the information stored in the storage means; and the characteristic of dirt in the information stored in the storage means The degree of the dirt is detected from the amount, and based on the criteria corresponding to the type and degree of the detected scratch, and / or Determination apparatus characterized by and a data processing means for performing the determination based on the criteria according to the degree of dirt that.

The "wafer surface inspection apparatus" detects scattered light obtained from the wafer surface when the wafer surface is irradiated with laser light, and a commercially available apparatus can be used. This inspection device uses each scattering point (LPD: Light
The main function is to judge pass / fail as individual defects, and to recognize this as a linear scratch or dirt from the two-dimensional gathering state of the LPD, or to determine that the scratch or dirt is defective. It has been difficult to perform the same inspection as that performed by humans, such as determining whether or not it is a kimono. For this reason, it is necessary for an operator to detect scratches and dirt, determine a defect, and the like by looking at this map, which is still insufficient in that inspection and determination can be performed without manual operation. That is, in the current inspection device, LP
From the D map, it was not possible to automatically recognize and determine a defect or a dirt made of an aggregate of LPDs as such, but by attaching the determination device according to the present invention, it becomes possible.

The “aggregate of LPDs on the wafer surface” may be continuous or discontinuous. The arrangement may be a straight line or a curved line. "Scratch"
The term means various forms such as an aggregate of defects on the wafer surface or a scratch on the wafer surface. Also "Type"
Means qualitative, and "degree" means quantitative. Further, the "information of scratches and dirt supplied from the wafer surface inspection apparatus" includes visual screen information and numerical information.

The "storage means capable of accumulating a plurality of wafers" means that accumulation is possible for a plurality of wafers or a single wafer.

(2) The determination device according to (1), wherein the characteristic amount of the flaw or dirt is the density and size of the flaw or dirt.

(3) The feature amount of the flaw is one or more selected from the group consisting of the length, density, width, linearity, arc degree, and position of the flaw (1). The determination device according to the above.

(4) The feature of the dirt is one or more selected from the group consisting of the area, density / density, distribution, shape and position of the dirt. Judgment device.

(5) Based on the information on the scratches and dirt on the wafer surface, which is supplied from a wafer surface inspection device that detects the scratches and dirt on the wafer surface based on the LPD map, a wafer having the defects and dirt on the surface is used as a product. A determination method for determining whether or not to allow, detecting the type and degree of the flaw from the characteristic amount of the flaw in the information, and detecting the degree of the fouling from the characteristic amount of the flaw in the information. Performing the determination, based on a criterion according to the type and degree of the detected flaw, and / or performing the determination based on a criterion according to the degree of the detected dirt. Determination method.

(6) The method according to (5), wherein the characteristic amount of the flaw or dirt is the density and size of the flaw or dirt.

(7) The type and the type of the flaw are determined based on the characteristic amount of the flaw in the wafer surface information (information on the flaw and dirt on the wafer surface) supplied from the wafer surface inspection apparatus.
The degree of the dirt is detected based on the characteristic amount of the dirt in the surface information while performing the degree detection, and based on a criterion according to the type and degree of the scratch, and / or according to the degree of the dirt. A computer-readable storage medium storing a program including a determination step of determining whether to allow the wafer as a product based on a criterion.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a judgment apparatus and a judgment method according to the present invention will be described with reference to the drawings.

[Configuration of Apparatus] FIG. 1 is a schematic diagram showing the overall configuration of a silicon wafer surface inspection system 10 according to the present invention. As shown in FIG. 1, a surface inspection system 10 includes a laser scattering detector 11 for extracting minute defects from the surface of a silicon wafer, a control computer 12 for controlling the laser scattering detector 11, Computer 2 for extracting the extraction results (LPD map) from these extraction units 13 via the network 15 and determining the state of scratches and dirt.
One.

Each laser scattering detector 11 of the extraction unit 13
The surface of the silicon wafer is irradiated with laser light, and scattered light generated when there is a defect is detected. Then, the laser scattering detector 11 converts a map (LPD map: Light Point Defect map) in which each detected scattering point is an individual defect into a coordinate value in a predetermined coordinate system on the wafer and the intensity of the scattered light. By generating as a set, fine defects on the surface of the silicon wafer are extracted.

Information on individual scattering points (defects) on the silicon wafer surface thus extracted (LPD map)
Is stored on a hard disk (not shown) provided in each laser scattering detector 11 or directly on a hard disk of the computer 21 for determination via the network 15.
It is stored in association with the wafer ID, slot number, and the like.

The determination computer 21 constructs the wafer ID and slot number of the silicon wafer to be determined from each control computer 12 and the scattering point information (LPD map) associated with the wafer ID and slot number by Ethernet. LAN (Local Area Network)
k) Obtained from the corresponding laser scattering detector 11 via the (network 15).

Incidentally, even when the plurality of control computers 12 and the laser scattering detectors 11 manage the LPD map in different data formats, the determination computer 21 that has obtained these information is Is converted to a common data format and handled.

FIG. 2 is a block diagram showing the configuration of the computer 21 for determination.
(Central Processing Unit) 42, ROM (Read Only)
Memory) 44, RAM (Random Access Memory) 4
5. Hard disk drive 48, display processing unit 4
6, interfaces 43 and 49 are connected.

The CPU 42 operates in accordance with a program stored in the ROM 44 or a program read from another storage medium, and obtains scattering point information (LPD) of each silicon wafer supplied from the laser scattering detector 11 and the control computer 12. Map) is received via the interface 43, and is received from the hard disk drive device 48.
On the hard disk.

The CPU 42 writes a predetermined portion of the LPD map stored in the hard disk into the RAM 45 as necessary, and performs a flaw extraction process and a pass / fail judgment process described later. The processing result is obtained by performing a graphics process in the display processing unit 46 and then displaying the result on a CRT (Cathode Ray Tube).
And so on on the monitor 47,
The data is supplied to a printer via an interface 49 such as a USB terminal as needed, and is printed.

FIG. 3 shows the LPD map 30 supplied from the laser scattering detector 11 to the computer 21 for determination.
Is converted into screen information and displayed, and the determination computer 21 determines, among a plurality of scattering points 31 generated on the surface of the silicon wafer, a flaw that may become defective according to the aggregate state (feature amount). It is designed to detect dirt. For example, a plurality of scattering points (LPD) shown in FIG.
31 is a set area 3 of a series of scattering points approaching linearly
2 is detected as a flaw, and the irregularly formed gathering region 33 of scattering points having a high density is detected as dirt.

That is, the determination computer 21 detects linear scratches and irregular shaped dirt from the uneven distribution of the scattering points 31 on the silicon wafer surface and the state of generation of the aggregate according to the inspection processing procedure shown in FIG. Based on the uneven distribution of the scattering points 31 and the state of occurrence (feature) of the aggregate obtained as described above, it is further determined whether or not the scratches and dirt should be determined to be defective. First, when the LPD map data is obtained from the laser scattering detector 11, the inspection processing procedure is entered from step A11. In step A12, a linear set of scattering points 31 on the silicon wafer surface is obtained from the LPD map by the section analysis method and the pyramid processing. The region 32 is detected and recognized as a flaw.

When the process of detecting a flaw in step A12 is completed, the computer 21 proceeds to step A13 to detect from the LPD map uneven distribution, which is an irregular set of scattering points, ie, detection of dirt on the silicon wafer surface. .

When flaws and dirt are detected, the computer 21 proceeds to step A14 to classify the detected flaws and dirt on the basis of the characteristic amount, and on the basis of the classification result. It is determined whether or not the silicon wafer to be inspected at this time should be determined to be defective using the determination criteria. After the determination result is output to a printer or the like in step A15, the inspection processing procedure is completed in step A16.

Here, the details of the flaw detection processing in step A12 will be described. Figure 5 shows the LPD map 3
5 shows a schematic diagram for explaining the uneven distribution of the scattering points 31 which can be defective from 0 and the pyramid processing when detecting the aggregated region, and the determination computer 21 compares the LPD map 30 written in the RAM 45 with FIG. Three levels of resolution as shown in (A) (a: 200 × 200 [Dots], b: 400 × 400
[Dots], c: 1000 × 1000 [Dots]), and at each resolution, a linear aggregate area of scattering points is extracted by section analysis processing using a rotation projection method described later.

That is, the judgment computer 21 first analyzes the image of the LPD map 30 with low resolution (a: 200 × 200 [Dots]) as shown in FIG. Is extracted. In this case, the linear gathering area 34 of the scattering points that can be extracted with low resolution is detected by the rotation projection method described later with this resolution.

When the detection processing at the low resolution is completed, the computer 21 for determination analyzes the image at a slightly higher medium resolution (b: 400 × 400 [Dots]) as shown in FIG. The uneven distribution 33 and the linear aggregate area are extracted. In this case, the linear gathering area of the scattering points that can be extracted at this resolution is detected as a scratch by the rotation projection method described later with this resolution. Incidentally, the LP shown in FIG.
In the case of the D map 30, the uneven distribution 33 of the scattering points is recognized, but the linear aggregate region is not recognized. In such a case, there is a possibility that there is a linear gathering region of scattering points that can be extracted with a higher resolution in the uneven distribution 33, and the determination computer 21 further increases the size as shown in FIG. The LPD map 30 is image-analyzed with high resolution (c: 1000 × 1000 [Dots]) to extract uneven distribution 33 and linear aggregated regions.

In the high-resolution LPD map 30 shown in FIG. 5D, the linear aggregate area 3 hidden in the uneven distribution 33 which is the high-density area of the scattering points 31 at the low resolution is shown.
3A is recognized, and the computer 21
Means that the set area 33A can be detected at this resolution only by the rotation projection method described later.

Next, a description will be given of a method of detecting a linear gathering region of scattering points by an interval analysis method using a rotation projection method executed by the determination computer 21 at each resolution. FIG. 6 is a schematic diagram showing a principle of a method of detecting a linear aggregation region of scattering points that may become a linear defect, and a predetermined region AR10 of an LPD map 30 created based on the scattering points 31 on the silicon wafer surface. , The segment SEG10 is cut out, and the segment SEG10 is rotated. As a method of rotating the segment SEG10, a method of changing the read address of the image data of the area AR10 extracted in the RAM 45 (FIG. 2) according to the rotation angle and reading the image data is used.

The projection result of each scattering point 31 on the vertical axis (Y axis) of the segment SEG10 at that time is defined as a Y-axis projection curve YP.
The projection result of each scattering point 31 on the horizontal axis (X axis) of the EG 10 is defined as an X axis projection curve XP.

The X-axis projection curve XP and the Y-axis projection curve YP correspond to the respective axes (X
The larger the amount of projection of the scattering points (the number of scattering points) on the axis or the Y axis), the larger the value. For example, in FIG.
In the segment SEG10 at the rotation angle of 0 °, the continuous gathering region 32 of the scattering points existing inside the segment SEG10.
And the X-axis projection curve XP in a state where the angle between the longitudinal direction of the
Will be partially higher.

Accordingly, when a state where the X-axis projection curve XP and the Y-axis projection curve YP partially show a steep rise is detected, it can be understood that the continuous scattering point aggregation region 32 exists. This means that the scattering points are detected even if the aggregation area 32 is not continuous, and it is possible to detect a state in which the scattering points are arranged at least in a certain direction with regularity in the segment SEG10. it can. Incidentally, FIG. 6 shows a state in which the rotation angles are 0 °, 10 °, and 50 °. However, in the method of detecting the aggregation region 32 of the scattering points using the rotation projection method in the present embodiment, the rotation projection The direction is not fixed, and by monitoring the rising state of the X-axis projection curve XP and the Y-axis projection curve YP when continuously rotated, the scattered point aggregation region 32 is detected regardless of the direction. can do.

Here, a continuous linear gathering region 32 of scattering points according to the projection curve described above with reference to FIG.
Shows the detection principle, but actually, as shown in FIG. 7, the X-axis projection curve XP
The histogram is arranged for each of the Y-axis projection curve YP and the Y-axis projection curve in correspondence with the rotation angle, and the peak PEAK thereof is searched to determine the linear aggregation region 32 of the scattering points. This determination method uses a so-called two-dimensional Hough transform line detection method.

Thus, the computer for determination 21 is shown in FIG.
For each of the resolutions described above, the linear projection area of the scattering points that may be defective is detected in all the areas of the silicon wafer by the rotation projection method described above with reference to FIGS. Computer 21 for judgment
Recognizes a linear aggregate area of scattering points whose position (segment SEG10) is specified by the rotation projection method as a linear flaw by image processing based on the brightness and color.

Here, as the linear scratch recognized in this way, for example, as shown in FIG.
When the CPU 42 recognizes 2a, 32b and 32c, these three blocks 32a, 32b and 32c
It is necessary to determine whether c should be one flaw or a plurality of flaws (two or three flaws). Accordingly, the determination computer 21 determines in step A12
In FIG. 4, a process of connecting a linear scratch recognized intermittently under a certain condition is executed.

That is, as shown in FIG. 8, as a method of judging whether or not to see the first block 32a and the second block 32b recognized as linear scratches as one scratch, a computer for judgment is used. 21 is an angle θ of the two scratch blocks 32a and 32b with respect to the reference direction.
1 and θ2 and the midpoint M1 of each block 32a and 32b
Angle θ of the straight line L1 connecting M2 and M2 with respect to the reference direction.
3, the angle similarity Z is obtained by the following equation.

[0043]

(Equation 1)

This equation is for calculating the inner product of the difference between the angles. As the angle similarity Z approaches 1, two blocks 3
The degree of connection between 2a and 32b, that is, the degree of connection is increased.

This is based on the condition that the angles θ1 and θ2 of the two blocks 32a and 32b are close to each other, and that the two blocks 32a and 32b are not separated from each other in the perpendicular direction (the angle θ3 is small). This means that it is determined that the two blocks 32a and 32b should be connected. However, even when it is determined in this equation that the degree of connection is high, if the interval between the two blocks 32a and 32b is large, they should not be connected, and the computer 21 for determination is shown in FIG. The method determines whether the two blocks 32a and 32b should be connected.

That is, in FIG. 9, the determination computer 21 draws a common approximate straight line L2 of the two blocks 32a and 32b, and the interval L3 in the direction of the approximate straight line L2 of the two blocks 32a and 32b is set in advance. If it is smaller than the predetermined value, the two blocks 32a and 32b
Is determined to be concatenated.

As described above, the two blocks 32a and 32
By determining the necessity of connection based on the interval L3 in the direction of the approximate straight line L2 of b, the blocks 32a and 32b
The two blocks 32a and 32b that are close to each other to be connected can be connected more reliably than when the determination is made based on the distance L4 between the two closest points.

Next, a detailed processing procedure in the detection processing step A13 of the uneven distribution (dirt) of the scattering points 31 on the silicon wafer surface shown in FIG. 4 will be described. FIG. 10 shows an LPD map 30 showing the detection state of the scattering points 31 on the surface of the silicon wafer, and the uneven distribution areas 35a, 36a, 3
7A shows a state in which there is an image 7a. In this state,
The scattering points 31 of the LPD map 30 are represented as dots as shown in FIG. The determination computer 21 performs a conversion process on each dot of the LPD map 30 into, for example, a 256-gradation bit map, thereby obtaining bit map data BM as shown in FIG.

The determination computer 21 performs a smoothing process using a spatial filter on the bitmap data BM, thereby smoothing the bitmap data BM as shown in FIG. 11C. Get. FIG. 10B shows the smoothed curve S1 as an image.
As shown in the figure, the uneven distribution areas 35a and 36a of the scattering point 31
Only 37a is represented with its periphery blurred. In this display state, as a result of the smoothing processing, the dots that are farther from other dots are displayed thinner.

Then, the computer for determination 21 is as shown in FIG.
As shown in (C), the smoothing curve S1 is binarized with a preset threshold value SH to obtain binarized area data D35C. This binarized area data D35
Due to C, uneven distribution regions 35c, 36c, and 37c whose brightness is clearly different from the surroundings as shown in FIG. 10C are obtained. By providing and extracting the threshold SH for the unevenly distributed region of the scattering point 31 in this manner, even in a region where the scattering points are slightly denser than the surroundings, the unevenly distributed region can be reliably determined by selecting the threshold SH. Can be extracted.

By appropriately changing the threshold value SH for obtaining the binarized data D35C as described above, the uneven distribution region corresponding to the detection state of the scattering points 31 on the silicon wafer surface (the overall density of the scattering points 31) is obtained. Can be detected.
For example, when a large number of scattering points 31 are detected as a whole, the setting level of the threshold value SH is increased, so that a region having a particularly high detection density is regarded as an unevenly distributed region, and the other regions where the scattering points 31 are present on average. This makes it possible to detect them separately. Then, the determination computer 21 recognizes the irregularly-shaped unevenly-distributed area detected in this way as dirty.

When a flaw or dirt on the surface of the silicon wafer is detected as described above, the computer 21 determines whether the detected flaw or dirt is defective or not, as shown in FIG. The determination is made in processing step A14.

That is, the judgment computer 21 is configured as shown in FIG.
With respect to the linear scratches extracted in step A12, it is determined whether or not the defect is defective based on the length and the detected intensity. In this case, the length of the flaw means the length of the flaw recognized as one by the method described above with reference to FIGS. 8 and 9, and the detection strength of the flaw means the rotation projection described with reference to FIGS. 6 and 7. Means the peak value PEAK (corresponding to the density of scratches) of the projection curves XP and YP (histogram) in the method.

The determination computer 21 determines the circumscribed rectangle of the uneven distribution (dirt) extracted in step A13 of FIG. 4, and calculates the area, the length in the vertical direction, the length in the horizontal direction, and the length of the diagonal of the circumscribed rectangle. It is determined whether or not a defect is present on the basis of the length, density, and area-density determination curve. That is, as shown in FIG.
With respect to the unevenly distributed (dirt) area 35c extracted in the above-described step A13, the determination computer 21 calculates the circumscribed rectangle 35d, and determines the length H in the vertical direction, the length W in the horizontal direction, and the length of the diagonal of the circumscribed rectangle 35d. The density and the area are measured, and the density is obtained based on the integrated value of each scattering point 31 in the unevenly distributed (dirt) region 35c.

Then, based on the area and density of the circumscribed rectangle 35d, the computer 21 for determination determines that the area-density determination formula represented by (density−asymptotic density)> coefficient α / (area−asymptotic area) is satisfied. Is determined. This means that when the value of the density and / or the area is larger than the area-density determination curve S35 as shown in FIG. 13, it is determined to be defective. That is, as a condition for determining that a person is dirty, attention is paid to the fact that the area and the density are in inverse proportion, and this is expressed as a conditional expression, which is the above-described area-density determination expression. By using this conditional expression, it is possible to judge a defect due to dirt under the same condition, which has been conventionally subjectively judged by a person.

In addition to the basic method of determining a defect based on the scratch and the dirt, the determination computer 21 classifies the type of the scratch and the dirt according to the characteristic amount of the set area of the scattering points and the uneven distribution area, and performs the classification. The criterion for defect determination is set according to the result. That is, as shown in FIG. 14, the flaws formed on the surface of the silicon wafer include, for example, flaws in an arc-shaped regular array generated in a lapping process (hereinafter referred to as first flaws).
39, and irregularly arranged flaws (hereinafter referred to as second flaws) 40 composed of a collection of defects called pock marks accompanied by deterioration of the electrical breakdown voltage (GOP). It is necessary to determine the second flaw 40 as a more serious defect than that.

Therefore, in the determination processing step A14 shown in FIG. 4, the determination computer 21 determines the type of the flaw according to the set state (feature amount) of the scattering points,
The criterion is changed according to the type of the flaw. For example, with respect to a second flaw in which the arrangement of the scattering points as the feature quantity is relatively irregular, compared with the case where the arrangement of the scattering points as the feature quantity is a regular first flaw, By shortening the length of the first flaw, the second flaw is defective even if the first flaw is not defective.

In addition, in the determination processing step A14 shown in FIG. 4, the determination computer 21 determines the type of the dirt according to the set state (feature) of the scattering points described above with reference to FIG. 13 (area-density determination curve S
35).

FIG. 15A is a diagram showing a method of detecting a scratch and a dirt by the computer 21 for judgment, and FIG. 15B is a diagram showing criteria for judging a defective wafer. Here, the length, density, area, and density were used as feature quantities for classifying scratches and dirt.
The features of the flaw include its length, density, width, linearity,
There are arc degree, position, and the like.
There are the area, density / density, distribution, shape, position, and the like, and the determination computer 21 uses these feature amounts as needed.

Thus, the determination computer 21 determines a defect based on a flaw or dirt on the surface of the silicon wafer, and the result is output to a printer or the like.

[Operation] In the silicon wafer surface inspection device (judgment computer 21) according to the present invention having the functions and configurations as described above, the scratches and dirt are collected by scattering point (LPD) 31 aggregates and uneven distribution. The information is extracted as information, and the types and degrees of the extracted scratches and dirt are classified based on their characteristic amounts. The type and degree of scratches and dirt often differ for each cause, and depending on the cause, even a small scratch or dirt should be regarded as defective. Accordingly, the determination computer 21 determines a defect by applying a different defect determination criterion for each type and degree of the classified scratches and dirt (aggregates, uneven distribution), thereby determining that a wafer that is good as a non-defective product is defective. Inconveniences such as a defective wafer or a non-defective wafer are avoided, and an accurate determination is made.

Further, since the determination computer 21 recognizes the aggregates and uneven distribution of the scattering points 31 as flaws and dirt, the operator does not need to determine flaws and dirt. The judgment result of the judgment computer 21 is sent to the computer 14 outside the clean room via the LAN.
(Fig. 1), it is not necessary for the operator to enter the clean room when performing various checking operations.
Work efficiency will be improved.

[Other Embodiments] In the above-described embodiment, the case where the interval analysis method using the rotation projection method and the pyramid processing are used in combination as the method for detecting the scratch on the surface of the silicon wafer has been described. The invention is not limited to this, and either one may be used.

In the above-described embodiment, the case where the defect is determined based on the length of the linear scratch and the case where the defect is determined based on the area and density of the dirt are described. Not limited to this, a defect may be determined based on the width (thickness) of a linear flaw, and furthermore, the area, height, linearity, arc degree, position, defect of the flaw or dirt may be determined. The feature amount such as the number, density, and size distribution of the scattering points 31 constituting (scratch, dirt) may be used for the defect determination.

[0065]

As described above, the apparatus for determining a silicon wafer according to the present invention can use the criteria such as the length and size to be determined as defective according to the type of the apparatus. Can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating an overall configuration of a silicon wafer inspection system according to the present invention.

FIG. 2 is a block diagram illustrating a configuration of a computer for determining a defect according to the present invention.

FIG. 3 is a schematic diagram illustrating an example of detecting an LPD map.

FIG. 4 is a flowchart showing a procedure of a surface inspection process for a silicon wafer according to the present invention.

FIG. 5 is a schematic diagram for explaining a pyramid process in a flaw detection process according to the present invention.

FIG. 6 is a schematic diagram for explaining a rotation projection method in a scratch detection process according to the present invention.

FIG. 7 is a schematic diagram for explaining a rotation projection method in a scratch detection process according to the present invention.

FIG. 8 is a schematic diagram for explaining a method of reproducing flaws according to the present invention.

FIG. 9 is a schematic diagram illustrating a method for reproducing a flaw according to the present invention.

FIG. 10 is a schematic diagram illustrating a method of reproducing dirt according to the present invention.

FIG. 11 is a schematic diagram for explaining a method for reproducing dirt according to the present invention.

FIG. 12 is a schematic diagram for explaining a method of reproducing dirt according to the present invention.

FIG. 13 is a schematic diagram for explaining a method of reproducing dirt according to the present invention.

FIG. 14 is a schematic diagram for explaining types of scratches according to the present invention.

FIG. 15 is a schematic diagram illustrating criteria for flaw detection and defect determination according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Surface inspection system 11 Laser scattering detector 12 Control computer 15 LAN 21 Computer for determination 25 Printer 30 LPD map 31 Scattering point 32 Linear assembly area 41 Bus 42 CPU 43, 49 Interface 44 ROM 45 RAM 46 Display processing unit 47 Monitor 48 Hard Disk Drive

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Yuki Matsumura 1200 Manda, Hiratsuka-shi, Kanagawa Prefecture, Komatsu Ltd. (72) Inventor Kotaro Hori 1200 Manda, Hiratsuka-shi, Kanagawa Komatsu Ltd.F-term ( Reference) 2F065 AA03 AA22 AA47 AA49 AA58 CC19 QQ21 QQ24 QQ31 QQ33 QQ36 QQ43 SS13 2G051 AA51 AB01 AB07 AC04 BA10 CB05 EA14 EC01 4M106 AA01 BA05 CA38 DA15 DB21 DB30 DJ20 DJ21

Claims (7)

[Claims] 1. A wafer having scratches and dirt on the surface is allowed as a product based on information on the scratches and dirt on the wafer surface which is supplied from a wafer surface inspection device that detects scratches and dirt on the wafer surface based on the LPD map. A determination device for determining whether or not the information on the scratches and dirt on the wafer supplied from the wafer surface inspection device; and information on the scratches and dirt on each wafer for a plurality of wafers. Storage means capable of accumulating the information, and detecting the type and degree of the flaw from the flaw characteristic amount in the information stored in the storage means, and the dirt characteristic amount in the information stored in the storage means From the detection of the degree of dirt, based on the criteria according to the type and degree of the detected scratch, and
And / or information processing means for performing the determination based on a criterion according to the degree of the detected dirt. 2. The determination device according to claim 1, wherein the characteristic amount of the flaw or dirt is the density and size of the flaw or dirt. 3. The characteristic amount of the flaw includes a length of the flaw,
2. The device according to claim 1, wherein the material is at least one selected from the group consisting of density, width, linearity, arc degree, and position.
The determination device according to the above. 4. The determination according to claim 1, wherein the characteristic amount of the dirt is at least one selected from the group consisting of an area, a density / density, a distribution, a shape, and a position of the dirt. apparatus. 5. A wafer having scratches and dirt on the surface is accepted as a product based on information on the scratches and dirt on the wafer surface, which is supplied from a wafer surface inspection device that detects scratches and dirt on the wafer surface based on the LPD map. A determination method for determining whether or not the type and degree of the flaw is detected from the characteristic amount of the flaw in the information, and detecting the degree of the fouling from the characteristic amount of the flaw in the information. Performing the determination based on a criterion according to the type and degree of the detected flaw and / or based on a criterion according to the degree of the detected dirt. Method. 6. The method according to claim 5, wherein the characteristic amount of the flaw or dirt is the density and size of the flaw or dirt. 7. The type and degree of the flaw are detected based on the feature amount of the flaw in the wafer surface information (information on flaws and dirt on the wafer surface) supplied from the wafer surface inspection device, and the flaw is detected in the surface information. Detecting the degree of dirt on the basis of the characteristic amount of dirt, based on a criterion according to the type and degree of the scratch, and / or based on a criterion according to the degree of dirt, the wafer as a product A computer-readable storage medium storing a program including a determination step of determining whether to permit.