JP2002076710A - High frequency filter - Google Patents

High frequency filter

Info

Publication number
JP2002076710A
JP2002076710A JP2000268563A JP2000268563A JP2002076710A JP 2002076710 A JP2002076710 A JP 2002076710A JP 2000268563 A JP2000268563 A JP 2000268563A JP 2000268563 A JP2000268563 A JP 2000268563A JP 2002076710 A JP2002076710 A JP 2002076710A
Authority
JP
Japan
Prior art keywords
semi
coaxial
frequency filter
conductor
coaxial resonators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000268563A
Other languages
Japanese (ja)
Other versions
JP3392397B2 (en
Inventor
Toa Kobayashi
東亜 小林
Yasukichi Ota
保吉 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPC Electronics Corp
Original Assignee
SPC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPC Electronics Corp filed Critical SPC Electronics Corp
Priority to JP2000268563A priority Critical patent/JP3392397B2/en
Publication of JP2002076710A publication Critical patent/JP2002076710A/en
Application granted granted Critical
Publication of JP3392397B2 publication Critical patent/JP3392397B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a semi-coaxial resonator band-elimination filter that can maintain a miniaturization when QL value is comparatively small. SOLUTION: This filter is a band-elimination filter 1 of which three semi- coaxial resonators 241-243 are combined with an outer conductor 21 at the fixed interval of λo/4, and of which a phase delay arises by the large capacitance. The inductive posts 10 are interposed into almost the half location between the adjacent resonators. A phase lead for the amount corresponding to the phase delay by the large capacitance is carried out by the posts 10, λo/4 can be ensured electrically, and the necessity of increasing the resonator interval to 3λo/4 can be avoided.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、マイクロ波無線送
受信装置等で使用される半同軸共振器型の高周波フィル
タに係り、特に、フィルタ寸法を小型化するための構造
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semi-coaxial resonator type high frequency filter used in a microwave radio transmitting / receiving apparatus or the like, and more particularly to a structure for reducing the size of the filter.

【0002】[0002]

【従来の技術】マイクロ波送受信装置等で使用される高
周波フィルタとして、例えば、複数の半同軸共振器を実
装した帯域阻止フィルタが知られている。図3は、n=
3を一例としたこの種の従来の帯域阻止フィルタの構成
を表す断面図である。この帯域阻止フィルタ2は、矩形
同軸ラインを基本構造とし、外部導体21の外壁に第1
及び第2の半同軸共振器241,242を実装するとと
もに、他方の外部導体21の外壁に第3の半同軸共振器
243を実装している。
2. Description of the Related Art As a high-frequency filter used in a microwave transmitting / receiving apparatus or the like, for example, a band rejection filter having a plurality of semi-coaxial resonators is known. FIG. 3 shows that n =
FIG. 3 is a cross-sectional view illustrating a configuration of a conventional band rejection filter of this type, which is an example of a conventional band rejection filter. The band rejection filter 2 has a rectangular coaxial line as a basic structure, and a first coaxial line is provided on the outer wall of the outer conductor 21.
And the second semi-coaxial resonators 241 and 242 are mounted, and the third semi-coaxial resonator 243 is mounted on the outer wall of the other external conductor 21.

【0003】各半同軸共振器241,242,243
は、それぞれ中心導体と外部導体が一体化された半同軸
共振器であり、各々の中心導体の先端部が、外部導体2
1に形成された結合孔から一定量突出している。これに
よって、各半同軸共振器241,242,243と矩形
同軸ラインとの結合が実現される。なお、外部導体21
の結合孔17付近の部位には、位置決めのための窪みが
設けられている。
Each semi-coaxial resonator 241, 242, 243
Are semi-coaxial resonators in each of which a central conductor and an external conductor are integrated.
A certain amount protrudes from the coupling hole formed in FIG. As a result, coupling between each of the semi-coaxial resonators 241, 242, 243 and the rectangular coaxial line is realized. The outer conductor 21
A concave portion for positioning is provided in a portion near the coupling hole 17.

【0004】各半同軸共振器241,242,243の
実装部位は、それぞれ約λo/4(λoは阻止したい中
心周波数foの波長)離れた部位に実装されている。
The mounting portions of the semi-coaxial resonators 241, 242, and 243 are mounted at portions separated by about λo / 4 (where λo is the wavelength of the center frequency fo to be blocked).

【0005】矩形同軸ラインの両端部の一方はマイクロ
波の入力端、他方は出力端であり、各々コネクタ23が
設けられている。入力端と出力端との間には、中心導体
22が矩形同軸ラインとして配されている。
[0005] One end of the rectangular coaxial line is a microwave input end and the other is an output end, and connectors 23 are provided respectively. The center conductor 22 is arranged as a rectangular coaxial line between the input terminal and the output terminal.

【0006】上記の帯域阻止フィルタ2では、信号成分
の中心周波数foとし、3dB幅をΔFとすると負荷Q
Lはfo/ΔFで表され、n=3の場合には一般にQL
値は2種類必要となる。QL値は、フィルタの特性をど
のような形にするかによりその2種の値が決まる。nが
大きければ必要とするQL値は多くなり、一方、所望の
中心周波数foが多くなる(CH数が多いことに対応)
と、それだけ必要とするQL値も多くなる。
In the above band rejection filter 2, when the center frequency of the signal component is fo and the 3 dB width is ΔF, the load Q
L is represented by fo / ΔF, and when n = 3, generally QL
Two values are required. The QL value is determined by two types of values depending on the form of the filter characteristics. If n is large, the required QL value increases, while the desired center frequency fo increases (corresponding to a large number of CHs).
Then, the required QL value increases accordingly.

【0007】[0007]

【発明が解決しようとしている課題】ところで、共振器
間隔が図3のように約λo/4間隔の場合において、通
過周波数fPと阻止周波数fRとが接近した状況、例えば
(Δf/(fR−fP))×100=0.08前後(Δf
は阻止域)の状況で、QL値が比較的小さい場合(30
程度以下)は、各半同軸共振器241,242,243
の固定中心導体の先端部と中心導体22との間に形成さ
れるフリンジング容量Cの影響が大きくなる。また、共
振器間隔が見かけ上長くなり、中心周波数fo付近の電
磁界が乱れて、中心周波数fo付近の位相状態が乱れ
る。すなわち、図4のフィルタ特性図に示すように、中
心周波数fo付近の減衰特性に「割れ」が生じ、本来、
30dB以上の減衰量になるべきところが15dB程度
になってしまう。
When the resonator spacing is about λo / 4 as shown in FIG. 3, the passing frequency fP and the stop frequency fR are close to each other, for example, (Δf / (fR−fP). )) × 100 = 0.08 (Δf
Is the stop band) and the QL value is relatively small (30
), Each semi-coaxial resonator 241, 242, 243
The effect of the fringing capacitance C formed between the tip of the fixed center conductor and the center conductor 22 increases. Also, the resonator interval becomes apparently long, the electromagnetic field near the center frequency fo is disturbed, and the phase state near the center frequency fo is disturbed. That is, as shown in the filter characteristic diagram of FIG. 4, a “crack” occurs in the attenuation characteristic near the center frequency fo,
Where the attenuation should be 30 dB or more is about 15 dB.

【0008】このため、従来は、QL値が小さくなる場
合には、図5に示すように外部導体31や中心導体32
を長くして、各半同軸共振器341,342,343の
間隔を約3λo/4にした帯域阻止フィルタ3を使用し
ていた。このようにすれば、減衰量は、図6のフィルタ
特性図に示されるように改善された値となる。しかしな
がら、図5のような構造の帯域阻止フィルタ3では、図
3の帯域阻止フィルタ2に比べてその形状が格段に大き
くなってしまう。帯域阻止フィルタが大きくなると、そ
の製造コストが高くなるうえに、使用される送受信装置
等のサイズやコスト、収容ケース等にも影響を及ぼす。
For this reason, conventionally, when the QL value becomes small, as shown in FIG.
And the band rejection filter 3 in which the distance between the semi-coaxial resonators 341, 342 and 343 is set to about 3λo / 4 is used. In this way, the attenuation becomes an improved value as shown in the filter characteristic diagram of FIG. However, the band rejection filter 3 having the structure as shown in FIG. 5 has a significantly larger shape than the band rejection filter 2 shown in FIG. When the band rejection filter is large, the manufacturing cost is high, and the size and cost of the transmitting / receiving device and the like, the housing case, and the like are affected.

【0009】本発明は、上記の問題点に鑑み、QL値が
比較的小さい場合において、小型化を維持することがで
きる、改良された高周波フィルタを提供することを主た
る課題とする。
SUMMARY OF THE INVENTION In view of the above problems, it is a main object of the present invention to provide an improved high-frequency filter capable of maintaining a small size when the QL value is relatively small.

【0010】[0010]

【課題を解決するための手段】上記課題を解決する本発
明の高周波フィルタは、高周波信号が通過する信号導波
体の外壁に複数の半同軸共振器が結合され、少なくとも
二つの半同軸共振器の結合度合によっては前記信号導波
体内にフリンジング容量が大きくなる高周波フィルタで
あって、前記二つの半同軸共振器の結合部位の間に誘導
性部材が介在することを特徴とする。誘導性部材の大き
さによって容量による遅相が打ち消されるので、隣り合
う半同軸共振器の距離を3λo/4とする必要がなくな
り、高周波フィルタの小型化が可能になる。
According to the high frequency filter of the present invention, a plurality of semi-coaxial resonators are coupled to an outer wall of a signal waveguide through which a high-frequency signal passes, and at least two semi-coaxial resonators are provided. A high-frequency filter having a large fringing capacity in the signal waveguide depending on the degree of coupling, wherein an inductive member is interposed between the coupling portions of the two semi-coaxial resonators. Since the delay due to the capacitance is canceled by the size of the inductive member, the distance between the adjacent semi-coaxial resonators does not need to be 3λo / 4, and the high-frequency filter can be downsized.

【0011】好ましい実施の形態では、複数の半同軸共
振器が互いに対向する前記外壁の所定部位に交互に一定
間隔で結合される。この場合、誘導性部材は、信号導波
体の内部空間であって隣り合う半同軸共振器のほぼ中間
の部位に介在させる。
In a preferred embodiment, a plurality of semi-coaxial resonators are alternately coupled at predetermined intervals to predetermined portions of the outer wall facing each other. In this case, the inductive member is interposed in the internal space of the signal waveguide and substantially in the middle between the adjacent semi-coaxial resonators.

【0012】信号導波体は、例えば前記外壁と内部導体
とが円形同軸状、又は矩形同軸状をなし、信号導波体の
中心軸線上に信号成分が通過する内部導体が配されてい
て、個々の半同軸共振器の中心導体と前記内部導体との
間のギャップによって形成される容量成分(負荷Q即ち
QL)によって誘導性部材の大きさは変化するのであ
る。
In the signal waveguide, for example, the outer wall and the inner conductor have a circular coaxial shape or a rectangular coaxial shape, and an inner conductor through which a signal component passes is disposed on a central axis of the signal waveguide. The size of the inductive member changes depending on the capacitance component (load Q, QL) formed by the gap between the center conductor of each semi-coaxial resonator and the internal conductor.

【0013】汎用性を考慮して、すべての半同軸共振器
が、信号導波体の中心軸線に対して垂直となる方向から
当該信号導波体の内部空間を指向する導体を有するもの
とし、隣り合う半同軸共振器の導体間の距離をほぼλo
/4(λoは使用する中心周波数の波長)とする。ま
た、誘導性部材と個々の半同軸共振器の中心導体との距
離がほぼλo/8になるようにする。これにより、余分
なフリンジング成分を有効に打ち消すことができるよう
になる。
In consideration of versatility, all the semi-coaxial resonators have conductors that direct the internal space of the signal waveguide from a direction perpendicular to the central axis of the signal waveguide, The distance between conductors of adjacent semi-coaxial resonators is approximately λo
/ 4 (λo is the wavelength of the center frequency to be used). Further, the distance between the inductive member and the center conductor of each semi-coaxial resonator is set to be approximately λo / 8. As a result, the excess fringing component can be effectively canceled.

【0014】[0014]

【発明の実施の形態】以下、本発明をマイクロ波帯で使
用される帯域阻止フィルタに応用した場合の実施の形態
を説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a band rejection filter used in a microwave band will be described below.

【0015】図1は、本実施形態の帯域阻止フィルタの
断面図,図2は図1のA線に沿った断面図であり、便宜
上、図3に示した従来の帯域阻止フィルタ2を改良した
場合の例を示す。従来型の帯域阻止フィルタ2と同一の
構成要素については同一符号を付して説明する。
FIG. 1 is a cross-sectional view of the band rejection filter of the present embodiment, and FIG. 2 is a cross-sectional view along the line A in FIG. 1. For convenience, the conventional band rejection filter 2 shown in FIG. Here is an example of the case. The same components as those of the conventional band rejection filter 2 are described with the same reference numerals.

【0016】本実施形態の帯域阻止フィルタ1は、矩形
同軸状の外部導体21の外壁の窪みに第1及び第2の半
同軸共振器241,242が実装され、他方の外部導体
21の外壁の窪みには第3の半同軸共振器243が実装
されている。内部中心導体22の中心軸上には、入出力
端の各々に設けられたコネクタ23が配されている。す
べての半同軸共振器241〜243は、それぞれ一体化
された固定中心導体と外部導体とを有しており、固定中
心導体は、各外部導体21に形成された結合孔を通じて
同軸管の内壁から一定量突出している。
In the band rejection filter 1 of the present embodiment, first and second semi-coaxial resonators 241 and 242 are mounted in recesses of the outer wall of a rectangular coaxial outer conductor 21, and the outer wall of the other outer conductor 21 is A third semi-coaxial resonator 243 is mounted in the depression. On the central axis of the inner central conductor 22, connectors 23 provided at each of the input and output ends are arranged. All the semi-coaxial resonators 241 to 243 each have a fixed central conductor and an outer conductor that are integrated, and the fixed central conductor is separated from the inner wall of the coaxial tube through a coupling hole formed in each outer conductor 21. A certain amount is prominent.

【0017】各半同軸共振器241,242,243の
実装部位は、主に約λo/4(約90°)の間隔で固定的
に定められている。QL値が比較的小さい場合には個々
の半同軸共振器241〜243の固定中心導体の先端部
が中心導体22に近づくので、個々の半同軸共振器24
1〜243の固定中心導体の先端部と内部中心導体22
との間のギャップによって大きなフリンジング容量が発
生する。この大きなフリンジング容量は、内部中心導体
22を通過する信号成分に対して遅相として作用する。
そのため、各半同軸共振器241〜243の間隔がみか
け上長くなり、中心周波数fo付近の位相が遅相とな
る。
The mounting portions of the semi-coaxial resonators 241, 242, 243 are fixedly determined mainly at intervals of about λo / 4 (about 90 °). When the QL value is relatively small, the tip of the fixed central conductor of each of the semi-coaxial resonators 241 to 243 approaches the central conductor 22, so that each of the semi-coaxial resonators 24
1 to 243 of the fixed center conductor and the inner center conductor 22
A large fringing capacity is generated due to the gap between. This large fringing capacitance acts as a delay for the signal component passing through the inner center conductor 22.
Therefore, the interval between the semi-coaxial resonators 241 to 243 becomes apparently long, and the phase near the center frequency fo is delayed.

【0018】そこで、この実施形態では、第3の半同軸
共振器243の固定中心導体から第1の半同軸共振器2
41、第2の半同軸共振器242方向にそれぞれ約λo
/8離れた部位に一対の誘導性ポスト(棒)10を介在
させるようにした。誘導性ポスト10は、信号成分に対
して進み相となる素材、例えば金属の薄板あるいは金属
を丸棒状に加工したもので、いわゆるインバータ的に機
能させるものである。誘導性ポストの取り付けは、はん
だ付け、ねじ止め、導電性接着剤を単独あるいは組み合
わせることで行う。これにより、フリンジング容量が有
効に打ち消され、従来の同じサイズの帯域阻止フィルタ
の場合に生じていた中心周波数fo付近の位相の遅相が
抑制される。実測では、本実施形態のように、半同軸共
振器241〜243の間隔がλo/4であるにもかかわ
らず、図6のような、改善された共振特性が得られた。
前述のように、図6は半同軸共振器341〜343の間
隔が3λo/4の場合の共振特性なので、本実施形態の
構造を採用することによって、帯域阻止フィルタのサイ
ズを著しく小型化できることがわかる。
Therefore, in this embodiment, the first semi-coaxial resonator 2 is separated from the fixed center conductor of the third semi-coaxial resonator 243.
41, about λo in the direction of the second semi-coaxial resonator 242, respectively.
A pair of inductive posts (rods) 10 were interposed at / 8 distant sites. The inductive post 10 is made of a material that becomes a leading phase with respect to the signal component, for example, a thin metal plate or a metal processed into a round bar shape, and functions as a so-called inverter. Attachment of the inductive post is performed by soldering, screwing, or using a conductive adhesive alone or in combination. As a result, the fringing capacitance is effectively canceled, and the phase lag near the center frequency fo, which occurs in the case of the conventional band rejection filter of the same size, is suppressed. In the actual measurement, an improved resonance characteristic as shown in FIG. 6 was obtained although the distance between the semi-coaxial resonators 241 to 243 was λo / 4 as in the present embodiment.
As described above, FIG. 6 shows the resonance characteristics when the interval between the semi-coaxial resonators 341 to 343 is 3λo / 4. Therefore, by employing the structure of the present embodiment, the size of the band rejection filter can be significantly reduced. Understand.

【0019】なお、本発明は、n=3で説明したが少な
くとも一つの半同軸共振器の存在により信号導波体内に
大きなフリンジング容量が生じるフィルタである場合
に、一つの半同軸共振器の結合部位と他の半同軸共振器
の結合部位との間に誘導性部材を介在させ、大きな容量
による遅相分をこの誘導性部材によって進相させ電気的
にλ/4を確保する点に主眼があるので、半同軸共振器
の数、寸法、誘導性ポストの数については、上述の実施
形態の例に限定されるものではない。
Although the present invention has been described with reference to n = 3, in the case of a filter in which a large fringing capacitance occurs in the signal waveguide due to the presence of at least one semi-coaxial resonator, one semi-coaxial resonator is used. An inductive member is interposed between the coupling part and the coupling part of another semi-coaxial resonator, and the main point is that a phase delay due to a large capacitance is advanced by the inductive member to electrically secure λ / 4. Therefore, the number of semi-coaxial resonators, the size, and the number of inductive posts are not limited to the example of the above-described embodiment.

【0020】また、本実施形態では、信号導波体として
矩形同軸を用いた場合の例を説明したが、本発明は、外
部導体の外壁と内部導体とが円形同軸状のものにも同様
に適用が可能である。円形同軸状の場合であっても、複
数の半同軸共振器を互いに対向する部位に交互に一定間
隔で結合させ、誘導性部材を、隣り合う半同軸共振器の
ほぼ中間の部位に介在させる。
In this embodiment, an example in which a rectangular coaxial is used as the signal waveguide has been described. However, the present invention is similarly applied to a case where the outer wall of the outer conductor and the inner conductor have a circular coaxial shape. Applicable. Even in the case of a circular coaxial shape, a plurality of semi-coaxial resonators are alternately coupled to portions opposed to each other at a fixed interval, and an inductive member is interposed at a substantially intermediate portion between adjacent semi-coaxial resonators.

【0021】[0021]

【発明の効果】以上の説明から明らかなように、本発明
の高周波フィルタによれば、QL値が比較的小さい場合
に小型化を維持することができる高周波阻止フィルタを
提供することができる。
As is apparent from the above description, according to the high frequency filter of the present invention, it is possible to provide a high frequency rejection filter capable of maintaining a small size when the QL value is relatively small.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係る帯域阻止フィルタの
構成を示す断面図。
FIG. 1 is a sectional view showing a configuration of a band rejection filter according to an embodiment of the present invention.

【図2】図1のA線に沿った断面図。FIG. 2 is a sectional view taken along line A in FIG. 1;

【図3】λo/4の間隔で半同軸共振器が実装された従
来の帯域阻止フィルタの構成を示す断面図。
FIG. 3 is a cross-sectional view showing a configuration of a conventional band rejection filter in which semi-coaxial resonators are mounted at an interval of λo / 4.

【図4】λo/4の間隔で半同軸共振器が実装された従
来の帯域阻止フィルタによるフィルタ特性図。
FIG. 4 is a filter characteristic diagram of a conventional band rejection filter in which semi-coaxial resonators are mounted at intervals of λo / 4.

【図5】3λo/4の間隔で半同軸共振器が実装された
従来の帯域阻止フィルタの構成を示す断面図。
FIG. 5 is a sectional view showing a configuration of a conventional band rejection filter in which semi-coaxial resonators are mounted at intervals of 3λo / 4.

【図6】3λo/4の間隔で半同軸共振器が実装された
従来の帯域阻止フィルタのフィルタ特性図、及びλo/
4の間隔で半同軸共振器間に誘導性ポストを設けた本発
明の帯域阻止フィルタ特性図。
FIG. 6 is a filter characteristic diagram of a conventional band rejection filter in which semi-coaxial resonators are mounted at an interval of 3λo / 4, and λo /
FIG. 4 is a characteristic diagram of the band rejection filter of the present invention in which inductive posts are provided between semi-coaxial resonators at intervals of 4.

【符号の説明】[Explanation of symbols]

1,2,3 帯域阻止フィルタ 10 誘導性ポスト 21,31 外部導体 22,32 中心軸線上に配された内部中心導体 23,33 コネクタ 241〜243,341〜343 半同軸共振器 1, 2, 3 Band stop filter 10 Inductive post 21, 31 Outer conductor 22, 32 Inner central conductor 23, 33 arranged on central axis Connector 241, 243, 341, 343 Semi-coaxial resonator

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 高周波信号が通過する信号導波体の外壁
に複数の半同軸共振器が結合され、少なくとも二つの半
同軸共振器の結合度合によっては前記信号導波体内に容
量変化が生じる高周波フィルタであって、前記二つの半
同軸共振器の結合部位の間に誘導性部材が介在すること
を特徴とする、 高周波フィルタ。
A plurality of semi-coaxial resonators are coupled to an outer wall of a signal waveguide through which a high-frequency signal passes, and a high-frequency component in which a capacitance change occurs in the signal waveguide depending on a coupling degree of at least two semi-coaxial resonators. A high-frequency filter, wherein an inductive member is interposed between coupling portions of the two semi-coaxial resonators.
【請求項2】 前記複数の半同軸共振器が互いに対向す
る前記外壁の所定部位に交互に一定間隔で結合されてお
り、前記誘導性部材は、前記信号導波体の内部空間であ
って隣り合う半同軸共振器のほぼ中間の部位に介在する
ことを特徴とする、 請求項1記載の高周波フィルタ。
2. The plurality of semi-coaxial resonators are alternately coupled to predetermined portions of the outer wall facing each other at a fixed interval, and the inductive member is adjacent to an inner space of the signal waveguide in an adjacent space. The high-frequency filter according to claim 1, wherein the high-frequency filter is provided at a substantially intermediate portion between the matching semi-coaxial resonators.
【請求項3】 すべての半同軸共振器が前記信号導波体
の中心軸線に対して垂直となる方向から当該信号導波体
の内部空間を指向する中心導体を有するものであり、前
記隣り合う半同軸共振器の中心導体間の距離がほぼλo
/4である、 請求項2記載の高周波フィルタ。
3. All of the semi-coaxial resonators have a central conductor pointing in an internal space of the signal waveguide from a direction perpendicular to a central axis of the signal waveguide. The distance between the center conductors of the semi-coaxial resonator is approximately λo
The high-frequency filter according to claim 2, wherein the ratio is / 4.
【請求項4】 前記誘導性部材と個々の半同軸共振器の
中心導体との距離がほぼλo/8である、 請求項3記載の高周波フィルタ。
4. The high frequency filter according to claim 3, wherein a distance between the inductive member and a center conductor of each semi-coaxial resonator is approximately λo / 8.
【請求項5】 前記信号導波体の中心軸線上に信号成分
が通過する内部導体が前記外壁と同軸で配されており、
個々の半同軸共振器の中心導体と前記内部導体との間の
ギャップによって形成される容量成分が隣り合う半同軸
共振器の中心導体間の距離と前記信号成分に対する減衰
量とによって変化する構造を有するものである、 請求項1乃至4のいずれかの項記載の高周波フィルタ。
5. An inner conductor through which a signal component passes on a central axis of the signal waveguide, is disposed coaxially with the outer wall, and
A structure in which the capacitance component formed by the gap between the center conductor of each semi-coaxial resonator and the internal conductor changes depending on the distance between the center conductors of adjacent semi-coaxial resonators and the amount of attenuation for the signal component. The high frequency filter according to any one of claims 1 to 4, wherein the high frequency filter has:
【請求項6】 前記外壁と内部導体とが円形同軸状であ
る、 請求項5記載の高周波フィルタ。
6. The high frequency filter according to claim 5, wherein the outer wall and the inner conductor are circular coaxial.
【請求項7】 前記外壁と内部導体とが矩形同軸状であ
る、 請求項5記載の高周波フィルタ。
7. The high frequency filter according to claim 5, wherein the outer wall and the inner conductor are rectangular coaxial.
JP2000268563A 2000-09-05 2000-09-05 High frequency filter Expired - Fee Related JP3392397B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000268563A JP3392397B2 (en) 2000-09-05 2000-09-05 High frequency filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000268563A JP3392397B2 (en) 2000-09-05 2000-09-05 High frequency filter

Publications (2)

Publication Number Publication Date
JP2002076710A true JP2002076710A (en) 2002-03-15
JP3392397B2 JP3392397B2 (en) 2003-03-31

Family

ID=18755330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000268563A Expired - Fee Related JP3392397B2 (en) 2000-09-05 2000-09-05 High frequency filter

Country Status (1)

Country Link
JP (1) JP3392397B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2713073C1 (en) * 2019-02-12 2020-02-03 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Device for alignment of amplitude-frequency characteristic of microwave path
CN111029781A (en) * 2019-12-02 2020-04-17 成都雷电微力科技有限公司 Compact dielectric filling waveguide circularly polarized filter antenna

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2713073C1 (en) * 2019-02-12 2020-02-03 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Device for alignment of amplitude-frequency characteristic of microwave path
CN111029781A (en) * 2019-12-02 2020-04-17 成都雷电微力科技有限公司 Compact dielectric filling waveguide circularly polarized filter antenna
CN111029781B (en) * 2019-12-02 2022-03-29 成都雷电微力科技股份有限公司 Compact dielectric filling waveguide circularly polarized filter antenna

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