JP2002043335A - Bonder and bonding method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bonder in which the load at the time of picking up or placing a semiconductor chip, and the distance between a substrate and a semiconductor chip at the time of carrying the chip can be controlled accurately regardless of variation in the thickness due to thermal expansion of a spindle or variation of the chips. SOLUTION: The bonder comprises a bonding head 11 including a spindle 13 connected with a suction collet 15 and a spring 12 for supporting the spindle fixed movably in the vertical direction, a sensor 21 for detecting movement of the spindle in the upper end direction, a drive section 17 for moving the bonding head 11 in the three-dimensional direction, and a section 18 for controlling the drive section 17. The control section 18 controls the drive section based on the movement of the spindle 13 detected by the sensor 21 at the time of placing a semiconductor chip 14 to adjust the height of the bonding head 11 such that a specified movement (a) is attained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a manufacturing technique for bonding semiconductor elements using a bonding head in a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art FIG. 5 shows an example of the configuration of a conventional bonding apparatus. The bonding apparatus includes a bonding head 11 ′, a bonding head X, Y, and Z axis driving unit (hereinafter referred to as a “driving unit”) 17 for driving the bonding head three-dimensionally, and a control unit for controlling the driving unit 17. 18 'and a data storage unit 19 for storing data required for control by the control unit 18'. The bonding head 11 'of the bonding apparatus includes a spindle 13 that moves in the vertical direction (Z-axis direction) and a spring 12' that supports the spindle 13. At the tip of the spindle, a suction collet 15 for sucking the semiconductor chip 14 is provided.
Is attached.

In the conventional bonding apparatus having the above-described configuration, the semiconductor chip 14 on the stage 16 at the first predetermined position is picked up using the suction collet 15 and transported from that position to the second predetermined position. Then, it is placed on the substrate at the second predetermined position (that is, bonded to the substrate).

FIG. 6 shows a conventional bonding apparatus.
FIG. 4 is a diagram illustrating a pickup operation, which is an operation of adsorbing and raising a semiconductor chip 14 on a stage 16 by a collet 15. In this pickup operation, the control unit 18 '
Are X, Y, and Z stored in the data storage unit 19 in advance.
The position information (coordinates) of the axis is read, and an instruction is issued to the drive unit 17 based on the position information. The drive unit 17 receives this,
The bonding head 11 'is moved to the designated position, and the semiconductor chip 14 is picked up.

At this time, the position information stored in advance in the data storage unit 19 is based on the case where the thickness of the head semiconductor chip 14 is a predetermined value and the spindle 13 of the bonding head 11 'is not thermally expanded. Is set. The thickness of the semiconductor chip 14 is a predetermined value;
When the spindle 13 of the bonding head 11 'is not thermally expanded and has a predetermined length, the bonding is performed based on the position information stored in the data storage unit 19 in advance, as shown in FIG. The height of the head 11 'is maintained at a predetermined value h.

Therefore, even when the thickness of the semiconductor chip 4 is larger than the standard value due to manufacturing variations, or when the spindle 13 of the bonding head is thermally expanded, the bonding is performed in the same manner as when the spindle 13 is not thermally expanded. Since the position of the head 11 'is controlled so that the height of the head 11' is maintained at the predetermined value h, as shown in FIG.
The spring 12 'attached to the root portion of the spindle 13 contracts by the amount of thermal expansion of 3. Therefore, a load greater than the standard load is applied to the semiconductor chip 14. In order to change such a load, it is necessary to change the spring 12 'to a spring having a different spring constant.

FIG. 7 shows a conventional bonding apparatus.
FIG. 4 is a diagram illustrating a distance (clearance) between the substrate 31 and the semiconductor chip 14 adsorbed by the collet 15 when the semiconductor chip 14 is moved onto the substrate 31. At this time, the control unit 18 'reads the X, Y, and Z axis position information stored in advance in the data storage unit 19, and instructs the drive unit 17 based on the position information. In response to this, the drive unit 17 moves the bonding head 11 ′ to the designated position and holds the position.

At this time, the position information stored in advance in the data storage unit 19 is such that the thickness of the head semiconductor chip 14 is a standard value and the spindle 1 of the bonding head 11 ′
7 is set on the basis of the case where thermal expansion is not performed. In the example shown in FIG. 7, bonding is performed to maintain the clearance at a predetermined value f based on the position information stored in advance in the data storage unit 19. The height of the head 11 'is maintained at a predetermined value h'.

Therefore, even when the thickness of the semiconductor chip 14 changes due to variations or the spindle 13 of the bonding head 11 'thermally expands, the height of the bonding head 11' is maintained at the predetermined value h '. Therefore, there is a problem that the actual clearance is reduced by an amount corresponding to a change in the thickness of the semiconductor chip 14 or an amount corresponding to the thermal expansion of the spindle 13. For this reason, it has been difficult to keep the clearance constant. That is, a stable bonding height could not be realized.

FIG. 8 shows a conventional bonding apparatus.
FIG. 6 is a diagram illustrating a place operation of joining the semiconductor chip 14 adsorbed to the collet 15 on the substrate 31. In this operation, the control unit 18 'operates the data storage unit 1
The position information of the X, Y, and Z axes stored in advance in step 9 is read out, and an instruction is issued to the drive unit 17 based on the position information. In response to this, the driving unit 17 moves the bonding head 11 ′ to the designated position, and moves the semiconductor chip 14
Place. That is, it is joined to the substrate 11.

The position information stored in advance in the data storage unit 19 at this time is based on the case where the thickness of the head semiconductor chip 14 is a predetermined value and the spindle 13 of the bonding head 11 'is not thermally expanded. In the example shown in FIG. 8, the bonding head 11 ′ is placed so that the height of the bonding head 11 ′ becomes a predetermined value h ″.

Therefore, the thickness of the semiconductor chip 14 may vary due to variations, or the bonding head 1
Even when the spindle 13 of 1 'is thermally expanded, the height of the bonding head 11' is controlled to the predetermined value h "as in the case where there is no thermal expansion or the like of the spindle 13. For this reason, the spring 12 'contracts by an amount corresponding to a change in the thickness of the semiconductor chip 14 or an amount corresponding to the thermal expansion of the spindle 13, which makes it difficult to press-contact with a constant and stable load.

[0013]

As described above, in the conventional bonding apparatus, there are variations in manufacturing such as the thermal expansion in the height direction of the spindle of the bonding head, the thickness of the semiconductor chip, and the thickness of the substrate. In addition, there is a problem that a load at the time of pickup or place, a clearance between the substrate and the semiconductor chip, and the like cannot be accurately controlled.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor chip pickup that does not depend on variations in semiconductor chip thickness due to thermal expansion of a spindle or manufacturing variations. It is an object of the present invention to provide a bonding apparatus capable of accurately controlling a load at the time or place, a clearance between a substrate and a semiconductor chip, and the like.

[0015]

A first bonding apparatus according to the present invention picks up a semiconductor chip disposed at a first predetermined position, transports the semiconductor chip to a second predetermined position, and transfers the semiconductor chip to a second predetermined position.
Is a bonding apparatus for placing a semiconductor chip on a substrate at a predetermined position. The first bonding apparatus includes a spindle to which a suction collet is connected and a spring supporting the spindle, a bonding head body having the spindle movably mounted in a vertical direction, and a spindle resisting a repulsive force of the spring. A sensor for detecting an amount of movement when the bonding head moves toward the upper end, a driving unit for moving the bonding head body in a three-dimensional direction, and a control unit for controlling the operation of the driving unit. When the semiconductor chip is placed on the substrate, the control means drives the bonding head body to adjust the height of the bonding head body so that the spindle movement amount becomes a predetermined amount based on the movement amount of the spindle detected by the sensor. Control means.

A second bonding apparatus according to the present invention comprises:
A bonding apparatus picks up a semiconductor chip arranged at a first predetermined position, conveys the semiconductor chip to a second predetermined position, and places the semiconductor chip on a substrate at the second predetermined position. The second bonding apparatus includes a spindle to which a suction collet is connected and a spring supporting the spindle. The bonding head main body has a spindle movably mounted in a vertical direction, and the spindle resists a repulsive force of the spring. A sensor for detecting an amount of movement when the bonding head moves toward the upper end, a driving unit for moving the bonding head body in a three-dimensional direction, and a control unit for controlling the operation of the driving unit. When picking up the semiconductor chip, the control means controls the driving means based on the movement amount of the spindle detected by the sensor to adjust the height of the bonding head main body so that the movement amount of the spindle becomes a predetermined amount. Control.

In the above first or second bonding apparatus, the sensor may be fixed to the bonding head body.

A third bonding apparatus according to the present invention comprises:
A bonding apparatus picks up a semiconductor chip arranged at a first predetermined position, conveys the semiconductor chip to a second predetermined position, and places the semiconductor chip on a substrate at the second predetermined position. The third bonding apparatus includes a spindle to which a suction collet is connected and a spring for supporting the spindle, a bonding head body to which the spindle is vertically movably mounted, and a spindle against a repulsive force of the spring. The sensor includes a sensor for detecting an amount of movement when moving toward the upper end, a driving unit for moving the bonding head body in a three-dimensional direction, and a control unit for controlling the operation of the driving unit. The control means obtains a difference between the movement amount of the spindle detected by the sensor and a predetermined reference movement amount during the pickup operation of the semiconductor chip,
Based on the difference, the driving unit is controlled to adjust the height of the bonding head during transport so that the distance between the semiconductor chip and the substrate during transport becomes a predetermined value.

In the above third bonding apparatus,
It is preferable that the predetermined reference movement amount is the movement amount of the spindle detected at the time of the semiconductor chip pickup operation when the spindle has no thermal expansion and the thickness of the semiconductor chip is a standard value.

Further, when the movement amount of the spindle is the predetermined reference movement amount a, the height of the bonding head necessary for setting the distance between the semiconductor chip and the substrate at the time of transfer to a predetermined value is h. In this case, when the movement amount of the spindle detected by the sensor during the pickup operation is b, the height of the bonding head at the time of conveyance is set to h + (a−
Control may be performed in b).

Further, the sensor may be fixed to the bonding head body.

The first bonding method according to the present invention comprises:
A bonding apparatus comprising: a bonding head driven by a predetermined drive source to perform a three-dimensional operation; a spindle mounted movably in a vertical direction with respect to the bonding head; and a spring supporting the spindle in the bonding head. Bonding for picking up and picking up a semiconductor chip disposed at a first predetermined position, transporting the semiconductor chip to a second predetermined position, and placing the semiconductor chip on the substrate at the second predetermined position. Is the way. In the first bonding method, when a semiconductor chip is placed on a substrate, a movement amount when a spindle moves toward an upper end relative to a bonding head against a spring is detected, and the detected movement amount is determined. The semiconductor chip is placed on the substrate while adjusting the height of the bonding head so that the movement amount of the spindle is maintained at a predetermined amount.

A second bonding method according to the present invention comprises:
A bonding head driven by a predetermined drive source to perform a three-dimensional operation; a spindle to which semiconductor chip suction means is attached and which is vertically mounted on the bonding head; and a spring for supporting the spindle in the bonding head And a spindle that adsorbs the semiconductor chip disposed at the first predetermined position by using a bonding device that can move relative to the bonding head in the upper end direction against the repulsive force of the spring. This is a bonding method of picking up, transporting the semiconductor chip to a second predetermined position, and placing the semiconductor chip on the substrate at the second predetermined position. Second
The bonding method of (1) detects the amount of movement when the spindle moves toward the upper end relative to the bonding head against the spring when picking up the semiconductor chip, and, based on the detected amount of movement, The semiconductor chip is picked up while adjusting the height of the bonding head so that the movement amount is maintained at a predetermined amount.

A third bonding method according to the present invention comprises:
A bonding head driven by a predetermined drive source to perform a three-dimensional operation; a spindle to which semiconductor chip suction means is attached and which is vertically mounted on the bonding head; and a spring for supporting the spindle in the bonding head. And a spindle that uses a bonding device that can move relative to the bonding head in the upper end direction against the repulsive force of the spring, and sucks and picks up the semiconductor chip disposed at the first predetermined position. A semiconductor chip is transported to a second predetermined position, and the semiconductor chip is placed on the substrate at the second predetermined position. In the third bonding method, during the pickup operation of the semiconductor chip, a movement amount when the spindle moves in the vertical direction against the repulsive force of the spring is detected, and the detected movement amount of the spindle and a predetermined reference movement are detected. The distance between the semiconductor chip and the substrate during transport is maintained at a predetermined value by determining the difference from the amount and adjusting the height of the bonding head during transport based on the difference.

In the above third bonding method,
It is preferable that the predetermined reference movement amount is the movement amount of the spindle detected at the time of the semiconductor chip pickup operation when the spindle has no thermal expansion and the thickness of the semiconductor chip is a standard value.

When the movement amount of the spindle is the predetermined reference movement amount a, the height of the bonding head necessary for setting the distance between the semiconductor chip and the substrate at the time of transfer to a predetermined value is h. In this case, when the movement amount of the spindle detected at the time of the pickup operation is b, the height of the bonding head at the time of conveyance may be controlled to h + (ab).

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a bonding apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

Embodiment 1 (Structure of Bonding Apparatus) FIG. 1 is a view showing a structure of a main part of a bonding apparatus according to the present invention. The bonding apparatus includes a bonding head body (hereinafter, referred to as a “bonding head”) 11 and a bonding head 1.
1 to three-dimensionally drive bonding heads XY
A Z-axis drive unit (hereinafter referred to as “drive unit”) 17, a control unit 18 for controlling the drive unit 17, a data storage unit 19 for storing data necessary for control by the control unit 18,
A / D converter 2 for converting an analog signal into a digital signal
3 is provided. The bonding head 11 includes a spindle 13 that is vertically movable, a spring 12 that supports the spindle 13, and a displacement sensor 21 that detects a distance to the upper end of the spindle 13. The displacement sensor 21 detects the distance between the spindle 13 and the displacement sensor 21, thereby obtaining the amount of movement (displacement) when the spindle 13 moves in the vertical direction (Z-axis direction) against the repulsive force of the spring 12. it can. A suction collet 15 for suctioning the semiconductor chip 14 is attached to a tip (lower end) of the spindle 13. An A / D converter 23 is connected to the controller 18, and a detection signal from the displacement sensor 21 is input via the A / D converter 23.

(Overall Operation of Bonding Apparatus) The conventional bonding apparatus having the above configuration operates as follows. That is, the bonding apparatus moves the bonding head 11 to the stage 16 during the pickup operation.
The bonding head 11 is moved to a position immediately above the semiconductor chip 14 disposed above, and the bonding head 11 is lowered from that position to a position where the semiconductor chip 14 can be suctioned by the suction collet 15, and the semiconductor chip 14 is loaded with a certain load Then, the bonding head 11 is raised in the vertical direction. Then, the bonding apparatus moves the semiconductor chip 14 from the position to a position immediately above a predetermined position on the substrate on which the semiconductor chip 14 is to be placed. At this time, the distance between the substrate and the semiconductor chip, that is, the clearance is maintained at a constant distance. Then, the bonding head 11 is lowered in the vertical direction, and the semiconductor chip 14 is placed on the substrate with a constant load (that is, bonded to the substrate).

During the above operation, the control unit 18 reads out the position information of the X, Y, and Z axes stored in the data storage unit 19 in advance, and based on the position information, the bonding head 1
An instruction for controlling the position of No. 1 is output to the drive unit 17. In response to this, the drive unit 17 performs the above-described pickup and place operations by moving the bonding head 11 to the designated position.

(Place Operation with Constant Load) Hereinafter, a description will be given of a control performed by the bonding apparatus according to the present embodiment to make the load at the time of pickup and at the time of place constant.

At the time of the place operation, the control unit 18 controls the X, Y, Z stored in the data storage unit 19 in advance as described above.
The position information of the axis is read out, and the drive unit 1 is read out based on the position information.
Give instructions to 7. In response to this, the driving unit 17 moves the bonding head 11 to the designated position, and places the semiconductor chip 14 at that position.

At this time, the controller 18 controls the displacement sensor 21
2, the place operation is performed while controlling the position of the bonding head 11 in the z-axis direction so that the distance between the spindle 13 and the displacement sensor 21 is always maintained at a predetermined value e, as shown in FIG. Do. The predetermined value e of the distance between the spindle 13 and the displacement sensor 21
4 has been determined in advance based on the load on 4. Thus, by maintaining the distance between the spindle 13 and the displacement sensor 21 at the predetermined value e against the repulsive force of the spring 12,
A constant load is always applied to the semiconductor chip 14.

Similarly, at the time of pickup operation, when the semiconductor chip 14 is sucked by the suction collet 15, the control unit 18 always determines the distance between the spindle and the displacement sensor 21 based on the detection signal from the displacement sensor 21. The pickup operation is performed while controlling the position of the bonding head 11 so that is maintained at a predetermined value e. As a result, a constant load is always applied to the semiconductor chip 14.

As described above, the bonding apparatus according to the present embodiment performs the distance operation between one end of the spindle 13 and the displacement sensor 21 when performing the place operation and the pickup operation.
That is, since the displacement of the spindle 13 is detected and the position of the bonding head 11 is controlled such that the displacement is always constant, the load applied to the semiconductor chip 14 during the place operation and the pickup operation can be controlled to be constant. Further, the displacement sensor 21 is connected to the bonding head 11.
By disposing the displacement sensor 21 inside, the displacement sensor 21 and the spindle 13 can be supported close to each other in the bonding head 11, the bonding head 11 can be reduced in size, and a high-sensitivity sensor is used for the displacement sensor 21. Since there is no need, the manufacturing cost of the device can be reduced.

Embodiment 2 In the present embodiment, the substrate 3 is not affected by the thermal expansion of the spindle and the fluctuation of the thickness of the parts due to the variation in the production of the semiconductor chip.
Control for maintaining the distance between the semiconductor chip 1 and the semiconductor chip 14, ie, the clearance, constant will be described. The configuration of the bonding apparatus according to the present embodiment is the same as that shown in FIG.

FIG. 3A is a diagram showing a state of the bonding head 11 at the time of the pickup operation when the spindle 13 has no thermal expansion and the thickness of the semiconductor chip is a standard value. FIG. 3B is a diagram showing a state of the bonding head 11 at the time of a pickup operation when the spindle 13 has thermal expansion or the like.

The pick-up operation of the bonding apparatus of this embodiment first detects a vertical displacement of the spindle 13 (hereinafter referred to as "spindle displacement Δz") due to thermal expansion of the spindle 13 or variation in parts. Based on the detected spindle displacement Δz, the position information in the Z-axis direction for maintaining the clearance constant is corrected.

For this reason, the bonding apparatus according to the present embodiment is designed so that the thermal expansion of the spindle 13 and the thickness of the semiconductor chip 14 are standard values as shown in FIG. If not deformed,
The distance a between the spindle 13 and the displacement sensor 21 is measured,
This distance a is the reference distance of the spindle 13 (reference movement amount).
And stored in the data storage unit 19.

In the pick-up operation, the control unit 18 reads out the position information of the X, Y, and Z axes stored in the data storage unit 19 in advance, and based on the position information, the driving unit 1
Give instructions to 7. The drive unit 17 receives this and moves the bonding head 11 to the designated position. In the present embodiment, as shown in FIG. 3, so that always h ₀ is the height of the bonding head 11 at the time of pickup Z
Axial position control is performed.

(Detection of Spindle Displacement) When a pickup operation is performed on each chip, the bonding apparatus picks up the chip and detects the spindle displacement Δz as follows. That is, the distance b between the spindle 13 and the displacement sensor 21 when the bonding head 11 is controlled to a predetermined height h ₀ is
And stores it in the data storage unit 19. At this time, when the spindle 13 is thermally expanded, or when the semiconductor chip 14 or the like is larger than the standard thickness due to manufacturing variations, as shown in FIG. Will be closer to 21
Distance b <reference distance a. The control unit 18 calculates the difference between the distances, and uses the calculated value as the spindle displacement amount Δz (= ab).
And stored in the data storage unit 19.

(Constant Clearance Control Operation) An operation for maintaining a constant clearance between the substrate 31 and the semiconductor chip 14 using the spindle displacement Δz obtained as described above will be described. FIG. 4 (a)
FIG. 4 is a view for explaining a clearance when there is no thermal expansion or the like of a spindle 13. The height h ₁ of the bonding head 11 of this time is the height of the reference.

In order to keep the clearance constant (predetermined value c), the control unit 18 reads out the Z-axis position information of the clearance holding position stored in the data storage unit 19 in advance, and reads the original Z-axis position. The drive unit 17 is instructed using a value corrected by adding the spindle displacement amount Δz (= ab) stored at the time of pickup to the information. That is, the control unit 18 sets the height of the bonding head 11 to the predetermined value h ′ ₁ (=
setting the position coordinates of the Z-axis to control the _{h 1 + Δz = h 1 +} (a-b)). In response to this, the drive unit 17 controls the bonding head 11 to the designated position, so that the clearance between the semiconductor chip 14 and the substrate 31 can be maintained at the predetermined value c. That is,
Even when the spindle 13 has thermal expansion or the like, as shown in FIG. 4B, by controlling the height of the bonding head 11 to a height h ′ ₁ (= h ₁ + (a−b)). In addition, a change due to thermal expansion of the spindle 13 or the like is absorbed, and the clearance can be maintained at the predetermined value c.

As described above, in the bonding apparatus of the present embodiment, the height of the bonding head 11 is determined based on the amount of displacement (movement) of the spindle 13 due to the thermal expansion of the spindle 13 and the variation in the thickness of the semiconductor chip. The substrate 31 and the semiconductor chip 1 are appropriately corrected.
The clearance between the four can always be kept constant.

[0045]

According to the first bonding apparatus of the present invention, when the semiconductor chip is placed on the substrate, the movement amount of the spindle becomes a predetermined amount based on the movement amount of the spindle detected by the sensor. In order to adjust the height of the bonding head body, the load on the semiconductor chip at the time of placing can be controlled to a constant value.

According to the second bonding apparatus of the present invention, when picking up a semiconductor chip, the bonding head body is adjusted so that the spindle movement amount becomes a predetermined amount based on the spindle movement amount detected by the sensor. In order to adjust the height, the load on the semiconductor chip during pickup can be controlled to a constant value.

In the above-described first or second bonding apparatus, the sensor may be fixed to the bonding head main body, whereby the size of the bonding apparatus can be reduced.
In addition, this makes it possible to support the sensor and the spindle close to each other in the bonding head body, and it is not necessary to provide a high-sensitivity sensor, so that the manufacturing cost of the apparatus can be reduced.

A third bonding apparatus according to the present invention comprises:
The distance (clearance) between the semiconductor chip and the substrate at the time of transport can be easily controlled to a constant value irrespective of the thermal expansion of the spindle or the thickness variation due to the variation during the manufacture of the semiconductor chip.

In the above third bonding apparatus,
The predetermined reference movement amount may be the movement amount of the spindle detected at the time of the semiconductor chip pickup operation when the spindle has no thermal expansion and the thickness of the semiconductor chip is a standard value. The clearance can be controlled based on a change in thickness due to a thermal expansion or a variation in manufacturing the semiconductor chip.

Further, in the above third bonding apparatus, the bonding head necessary for setting the distance between the semiconductor chip and the substrate at the time of transfer when the movement amount of the spindle is the predetermined reference movement amount a to a predetermined value. If the height of the head is h and the amount of movement of the spindle detected by the sensor during the pickup operation is b, the height of the bonding head during transfer may be controlled to h + (ab). As a result, it is possible to perform clearance control that absorbs variations in thickness due to thermal expansion of the spindle and variations in manufacturing semiconductor chips.

In the above third bonding apparatus,
The sensor may be fixed to the bonding head body, so that the size of the bonding apparatus can be reduced. In addition, this makes it possible to support the sensor and the spindle close to each other in the bonding head body, and it is not necessary to provide a high-sensitivity sensor, so that the manufacturing cost of the apparatus can be reduced.

According to the first bonding method of the present invention, when placing a semiconductor chip on a substrate, bonding is performed such that the spindle movement amount becomes a predetermined amount based on the spindle movement amount detected by the sensor. Since the height of the head body is adjusted, the load on the semiconductor chip at the time of placing can be controlled to a constant value.

According to the second bonding method of the present invention, when the semiconductor chip is picked up, the bonding head body is adjusted so that the spindle movement amount becomes a predetermined amount based on the spindle movement amount detected by the sensor. In order to adjust the height, the load on the semiconductor chip during pickup can be controlled to a constant value.

According to the third bonding method of the present invention, the distance (clearance) between the semiconductor chip and the substrate at the time of transport is independent of the thickness variation due to the thermal expansion of the spindle and the variation at the time of manufacturing the semiconductor chip. Can be easily controlled to a constant value.

In the above third bonding method,
The predetermined reference movement amount may be the movement amount of the spindle detected at the time of the semiconductor chip pickup operation when the spindle has no thermal expansion and the thickness of the semiconductor chip is a standard value. The clearance can be controlled based on a change in thickness due to a thermal expansion or a variation in manufacturing the semiconductor chip.

In the third bonding method described above, the bonding head required for setting the distance between the semiconductor chip and the substrate at the time of transport when the movement amount of the spindle is the predetermined reference movement amount a to a predetermined value. If the height of the head is h and the amount of movement of the spindle detected by the sensor during the pickup operation is b, the height of the bonding head during transfer may be controlled to h + (ab). As a result, it is possible to control the clearance that absorbs the variation in thickness due to the thermal expansion of the spindle and the variation during the manufacture of the semiconductor chip.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a bonding apparatus according to the present invention.

FIG. 2 is a diagram illustrating a state of a spindle and a spring at the time of a place operation of joining a semiconductor chip onto a substrate by the bonding apparatus according to the present invention.

3A is a diagram for explaining detection of a reference value of a spindle displacement amount, and FIG. 3B is a diagram showing a state of a bonding head during a place operation with a constant load.

FIG. 4 is a view for explaining the clearance in the bonding apparatus according to the present invention ((a) when there is no thermal expansion of the spindle, and (b) when there is thermal expansion of the spindle).

FIG. 5 is a configuration diagram of a conventional bonding apparatus.

6A and 6B are views for explaining a pickup operation by a conventional bonding apparatus ((a) when there is no thermal expansion of a spindle, and (b) when there is thermal expansion of a spindle).

FIG. 7 is a diagram illustrating a clearance between a substrate and a semiconductor chip by a conventional bonding apparatus.

FIG. 8 is a diagram illustrating a place operation by a conventional bonding apparatus.

[Explanation of symbols]

11 bonding head (body), 12 leaf spring,
Reference Signs List 13 spindle, 14 semiconductor chip, 15 suction collet, 17 bonding head X / Y / Z axis drive unit (drive unit), 18 control unit, 19 data storage unit, 23A / D conversion unit, 21 displacement sensor, 3
1 Substrate.

Continuation of front page (72) Inventor Yasushi Tsuchiya F-term (reference) 5F047 FA01 FA09 FA12 FA73 in 2-6-1, Otemachi, Chiyoda-ku, Tokyo

Claims (12)

[Claims] 1. A bonding apparatus for picking up a semiconductor chip disposed at a first predetermined position, transporting the semiconductor chip to a second predetermined position, and placing the semiconductor chip on a substrate at the second predetermined position. A bonding head body including a spindle connected to a collet and a spring supporting the spindle, wherein the spindle is vertically movably mounted; and the spindle moves in an upper end direction against a repulsive force of the spring. A sensor for detecting an amount of movement when the semiconductor chip is moved; a driving unit for moving the bonding head body in a three-dimensional direction; and a control unit for controlling the operation of the driving unit. When placing on a straight, movement of the spindle based on the movement amount of the spindle detected by the sensor There bonding apparatus and controls the drive means to adjust the height of the bonding head body to a predetermined amount. 2. A bonding apparatus for picking up a semiconductor chip disposed at a first predetermined position, transporting the semiconductor chip to a second predetermined position, and placing the semiconductor chip on a substrate at the second predetermined position. A bonding head body including a spindle connected to a collet and a spring supporting the spindle, wherein the spindle is vertically movably mounted; and the spindle moves in an upper end direction against a repulsive force of the spring. A sensor for detecting the amount of movement of the semiconductor chip, a driving unit for moving the bonding head body in a three-dimensional direction, and a control unit for controlling the operation of the driving unit. The control unit picks up the semiconductor chip. In this case, the spindle movement amount reaches a predetermined amount based on the spindle movement amount detected by the sensor. Bonding and wherein the controller controls the drive means to adjust the height of the bonding head body such. 3. The bonding head according to claim 1, wherein the sensor is fixed to the bonding head body.
The bonding apparatus as described in the above. 4. A bonding apparatus for picking up a semiconductor chip arranged at a first predetermined position, transporting the semiconductor chip to a second predetermined position, and placing the semiconductor chip on a substrate at the second predetermined position. A bonding head body including a spindle to which a collet is connected and a spring supporting the spindle, wherein the spindle is vertically movably mounted, and the spindle moves in an upper end direction against a repulsive force of the spring. A sensor for detecting the amount of movement of the semiconductor chip, a driving unit for moving the bonding head body in a three-dimensional direction, and a control unit for controlling the operation of the driving unit. A difference between the spindle movement detected by the sensor and a predetermined reference movement is calculated. Based on the difference, bonding and wherein the distance between the conveying time of the semiconductor chip and the substrate to control the drive means to adjust the height of the bonding head during the transport to a predetermined value. 5. The predetermined reference movement amount is a movement amount of a spindle detected during a pickup operation of a semiconductor chip when the spindle has no thermal expansion and the thickness of the semiconductor chip is a standard value. 5. The bonding apparatus according to claim 4, wherein the bonding apparatus is provided. 6. The height of a bonding head required for setting the distance between the semiconductor chip and the substrate during the transfer to the predetermined value when the movement amount of the spindle is a predetermined reference movement amount a is h. The height of the bonding head during the transfer is controlled to h + (ab) when the amount of movement of the spindle detected by the sensor during the pickup operation is b. 4
The bonding apparatus as described in the above. 7. The bonding apparatus according to claim 4, wherein said sensor is fixed to said bonding head main body. 8. A bonding head driven by a predetermined drive source to perform a three-dimensional operation, a spindle movably mounted in a vertical direction with respect to the bonding head, and supporting the spindle in the bonding head. Using a bonding device provided with a spring, a semiconductor chip disposed at a first predetermined position is sucked and picked up, and the semiconductor chip is transported to a second predetermined position. A bonding method for placing a semiconductor chip on a substrate, the method comprising: when placing the semiconductor chip on a substrate, wherein the spindle moves toward an upper end relative to a bonding head against the spring. The movement amount is detected, and the spindle movement amount is held at a predetermined amount based on the detected movement amount. A semiconductor chip is placed on a substrate while adjusting the height of the bonding head so as to be adjusted. 9. A bonding head driven by a predetermined driving source to perform a three-dimensional operation, a spindle to which semiconductor chip suction means is attached and which is vertically attached to the bonding head; A spring supported in the head, wherein the spindle is disposed at a first predetermined position by using a bonding device capable of moving relative to the bonding head in an upper end direction thereof against a repulsive force of the spring. And picks up the semiconductor chip
A bonding method of transporting the semiconductor chip to a predetermined position and placing the semiconductor chip on a substrate at a second predetermined position thereof, wherein when picking up the semiconductor chip, the spindle opposes the spring. And detecting the amount of movement when moving in the upper end direction relative to the bonding head. Based on the detected amount of movement, the height of the bonding head is adjusted such that the amount of movement of the spindle is maintained at a predetermined amount. A semiconductor chip is picked up while adjusting the temperature. 10. A bonding head driven by a predetermined drive source to perform a three-dimensional operation, a spindle to which a semiconductor chip suction means is attached and which is vertically attached to the bonding head, and the spindle is connected to the bonding head. A spring supported in the head, wherein the spindle is disposed at a first predetermined position by using a bonding device capable of moving relative to the bonding head in an upper end direction thereof against a repulsive force of the spring. And picks up the semiconductor chip
A bonding method of transporting the semiconductor chip to a predetermined position and placing the semiconductor chip on a substrate at a second predetermined position thereof, wherein a spindle resists a repulsive force of a spring during a pickup operation of the semiconductor chip. To determine the difference between the detected movement amount of the spindle and a predetermined reference movement amount, and adjust the height of the bonding head during the transfer based on the difference. A bonding method, wherein the distance between the semiconductor chip and the substrate during the transfer is maintained at a predetermined value. 11. The predetermined reference movement amount is a movement amount of the spindle detected during a pickup operation of the semiconductor chip when the spindle has no thermal expansion and the thickness of the semiconductor chip is a standard value. The bonding method according to claim 10, wherein the bonding method is provided. 12. When the movement amount of the spindle is a predetermined reference movement amount a, the height of the bonding head necessary for setting the distance between the semiconductor chip and the substrate during the transfer to the predetermined value is h. When the movement amount of the spindle detected at the time of the pickup operation is b, the height of the bonding head at the time of the transfer is set to h + (a
The bonding method according to claim 10, wherein the control is performed in the step (b).