JP2002040662A - Positive photoresist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a positive photoresist composition, in which the line edge roughness is improved and generation of development defects is decreased in the manufacture of a semiconductor device. SOLUTION: The positive photoresist composition contains a resin, which contains a specified repeating structural unit and which increases dissolution rate with an alkali developer liquid due to the effect of an acid, and contains a compound which produces acid by irradiation of active rays or radiation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive resist composition used in an ultra microlithography process such as the production of an ultra LSI or a high-capacity micro chip, or other photofabrication processes.

[0002]

2. Description of the Related Art In recent years, the degree of integration of integrated circuits has been increasing more and more, and in the manufacture of semiconductor substrates such as ultra LSIs, it has become necessary to process ultrafine patterns having a line width of less than half a micron. Have been. In order to meet this need, the wavelength of an exposure apparatus used for photolithography is becoming shorter and shorter, and now excimer laser light (XeCl, KrF, ArF, etc.) having a short wavelength among far ultraviolet rays is used.
The use of is being considered. A chemically amplified resist is used for forming a pattern in lithography in this wavelength region.

In general, chemically amplified resists can be broadly classified into three types: so-called two-component, 2.5-component and three-component resists. The two-component system combines a compound that generates an acid by photolysis (hereinafter referred to as a photoacid generator) and a binder resin. The binder resin is a resin having in its molecule a group (also referred to as an acid-decomposable group) that decomposes under the action of an acid to increase the solubility of the resin in an alkaline developer. The 2.5-component system further contains a low-molecular compound having an acid-decomposable group in such a two-component system. The three-component system contains a photoacid generator, an alkali-soluble resin, and the above low molecular compound.

The above-mentioned chemically amplified resist is suitable for a photoresist for irradiating ultraviolet rays or far ultraviolet rays, but among them, it is necessary to further meet the required characteristics in use. As a photoresist composition for an ArF light source, a photoresist composition obtained by combining a (meth) acrylic resin having a lower absorption than a partially hydroxylated styrene resin with a compound capable of generating an acid by light is used. Proposed. For example, JP-A-7-199467 and JP-A-7-2523
No. 24 etc. Among them, JP-A-6-289615 discloses a resin in which a tertiary carbon organic group is ester-bonded to oxygen of a carboxyl group of acrylic acid.

Further, Japanese Patent Application Laid-Open No. Hei 7-234511 discloses an acid-decomposable resin having an acrylic ester or a fumaric ester as a repeating structural unit. The fact is that performance has not been obtained. Furthermore, a resin into which an alicyclic hydrocarbon site has been introduced for the purpose of imparting dry etching resistance has been proposed. JP-A-9-73173, JP-A-9-90637 and JP-A-10-161313 disclose that an alkali-soluble group protected by a structure containing an alicyclic group and that the alkali-soluble group is eliminated by an acid. A resist material using an acid-sensitive compound containing a structural unit that renders it alkali-soluble is described.

[0006] Japanese Patent Application Laid-Open No. 9-90637 and 10-
JP-A-2070769 and JP-A-10-274852 describe resist compositions containing an acid-decomposable resin having a specific lactone structure.

Since lithography processes for manufacturing devices using design rules of 0.18 μm and 0.13 μm or less often use light having a wavelength of 193 nm as exposure radiation, the resist polymer does not contain much ethylenic unsaturation. Is desired. JP-A-10-107
39 and JP-A-10-307401, the wavelength 19
Although the transparency to 3 nm has been improved, it cannot be said that the sensitivity is always high, and when lithography of 0.13 μm or less is considered, resist performance such as insufficient resolution is insufficient.

JP-A-10-130340 discloses a chemically amplified resist containing a terpolymer having a specific repeating structural unit having a norbornene structure in its main chain. Also, JP-A-2000-122294.
No. 1 improves the transparency to short wavelength light, dry etching resistance and resolution by using a resin having a bridged alicyclic skeleton in which at least one carbon is bonded to oxygen via a double bond. Attempts have been made.

However, such a chemically amplified resist has problems such as line edge roughness and generation of defects during development. What is line edge roughness?
Because the edge of the interface between the resist line pattern and the substrate fluctuates irregularly in the direction perpendicular to the line direction due to the characteristics of the resist, the edge looks uneven when viewed from directly above the pattern. . The unevenness impairs the resolution of the pattern or is transferred by an etching process using a resist as a mask, and deteriorates electrical characteristics, thereby lowering the yield. In particular, as the resist pattern size becomes smaller than quarter micron, there is an increasing demand for improvement in line edge roughness, but no guideline for improvement has been disclosed so far.

[0010]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a positive photoresist composition which has reduced line edge roughness and development defects in the manufacture of semiconductor devices.

[0011]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies on the constituent materials of a positive type chemically amplified resist composition, and have found that the use of an acid-decomposable resin having a repeating structural unit having a specific structure has been achieved. It was found that the object of the present invention was achieved, and the present invention was achieved. That is, the above object is achieved by the following constitutions.

(1) (A) A repeating structural unit represented by the following general formula (NI), a repeating structural unit represented by the following general formula (NII), and a repeating structural unit represented by the following general formula (I) A positive photoresist composition comprising: a resin which increases the dissolution rate in an alkali developer by the action of an acid; and (B) a compound which generates an acid upon irradiation with actinic rays or radiation.

[0013]

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[0014]

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[0015]

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In the general formula (NI), Rn _{1 to} Rn ₄ each independently represent a hydrogen atom or an alkyl group which may have a substituent. a is 0 or 1; In the general formula (NII), R
n ₅ represents a hydrogen atom or a methyl group. An is a single bond, an alkylene group, a cycloalkylene group, an ether group,
It represents a single group selected from the group consisting of a thioether group, a carbonyl group, and an ester group, or a combination of two or more groups. W represents a group represented by -C (Rna) (Rnb) (Rnc) or a group represented by -CH (Rnd) -O-Rne. Here, Rna, Rnb, and Rnc are:
Each may have a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group or an acyloxy group as a substituent, and may have a linear or branched alkyl group having 1 to 20 carbon atoms or an alicyclic group. Represents a formula hydrocarbon group. However, Rna and Rnb may be bonded to each other to form an alicyclic ring together with the carbon atoms commonly bonded. In this case, Rnc is an alkyl group having 1 to 4 carbon atoms. Rnd represents a hydrogen atom or an alkyl group. Rne may have a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group or an acyloxy group as a substituent, and may have a linear or branched alkyl group having 1 to 20 carbon atoms or an alicyclic group. Represents a formula hydrocarbon group. In the general formula (I), A is a single bond, an alkylene group, a cycloalkylene group, an ether group,
It represents a single group selected from the group consisting of a thioether group, a carbonyl group, and an ester group, or a combination of two or more groups. R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a cyano group, or a halogen atom.

(2) The positive photoresist composition as described in (1) above, wherein the resin (A) further contains a repeating structural unit represented by the following general formula (NIII).

[0018]

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In the formula (NIII), Z ₁ represents —O— or —N
(Rn ₆₎ - represents a. Here, Rn ₆ represents a hydrogen atom, a hydroxyl group, or —OSO ₂ —Rn ₇ . Rn ₇ is an alkyl group,
Represents a haloalkyl group, a cycloalkyl group or a camphor residue. (3) The positive photoresist composition as described in (1) or (2) above, further comprising (D) an organic basic compound, and (E) a fluorine-based and / or silicon-based surfactant. object.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, components used in the present invention will be described in detail. [1] (A) A resin whose dissolution rate in an alkali developer is increased by the action of an acid (hereinafter also referred to as “acid-decomposable resin”). In the general formula (NI) showing a repeating structural unit of the acid-decomposable resin, Rn _{1 to} Rn ₄ represent a hydrogen atom or an alkyl group which may have a substituent. The alkyl group of Rn ₁ ~Rn _4, preferably one having 1 to 12 carbon atoms,
More preferably, it has 1 to 10 carbon atoms, and specifically, methyl, ethyl, propyl, isopropyl, n
Preferred examples include -butyl group, isobutyl group, sec-butyl group, t-butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group and decyl group. As a substituent of this alkyl group, a hydroxy group,
Examples thereof include an alkoxy group and an alkoxyalkoxy group. In the general formula (NI), a is 0 or 1.

In the general formula (NII) representing a repeating structural unit of the acid-decomposable resin, Rn ₅ represents a hydrogen atom or a methyl group. In the general formula (NII), examples of the alkylene group of An include groups represented by the following formula. -[C (Rnf) (Rng)] r- In the above formula, Rnf and Rng are a hydrogen atom, an alkyl group,
Represents a substituted alkyl group, a halogen atom, a hydroxyl group, or an alkoxy group, which may be the same or different. As the alkyl group, a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group is preferable, and a methyl group, an ethyl group, a propyl group, and an isopropyl group are more preferable. Examples of the substituent of the substituted alkyl group include a hydroxyl group, a halogen atom and an alkoxy group. Examples of the alkoxy group include those having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group and a butoxy group. Examples of the halogen atom include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom. r is an integer of 1 to 10. General formula (NI
In I), examples of the cycloalkylene group of An include those having 3 to 10 carbon atoms, such as a cyclopentylene group, a cyclohexylene group, and a cyclooctylene group.

W in the general formula (NII) is a group constituting a group which is decomposed by the action of an acid together with the ester structure (-COO-), and is represented by -C (Rna) (Rnb)
A group represented by (Rnc) or —CH (Rnd) —O
Represents a group represented by -Rne. Where Rna, Rn
b and Rnc each may have a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group or an acyloxy group as a substituent, and may be a linear or branched group having 1 to 20 carbon atoms. Represents an alkyl group or an alicyclic hydrocarbon group. However, Rna and Rnb may be bonded to each other to form an alicyclic ring together with the carbon atoms commonly bonded. In this case, Rnc has 1 to 1 carbon atoms.
4 alkyl group. Rnd represents a hydrogen atom or an alkyl group. Rne may have a halogen atom, an alkoxy group, an alkoxycarbonyl group, an acyl group or an acyloxy group as a substituent, and may have a linear or branched alkyl group having 1 to 20 carbon atoms or an alicyclic group. Represents a hydrocarbon group.

The linear or branched alkyl group having 1 to 20 carbon atoms of Rna, Rnb, Rnc and Rne preferably has 1 to 12 carbon atoms, more preferably 1 to 10 carbon atoms. Specifically, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl, t-butyl, pentyl, hexyl, heptyl, octyl, nonyl And a decyl group. Rnd
The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms, specifically, a methyl group, an ethyl group, a propyl group,
Isopropyl group, n-butyl group, isobutyl group, sec
-Butyl group, t-butyl group and the like. R
The alicyclic hydrocarbon group as na, Rnb, Rnc, and Rne, and the alicyclic ring formed by combining Rna and Rnb with each other preferably have 3 to 30 carbon atoms, and more preferably have 4 to 25 carbon atoms.
Is particularly preferable, and 5 to 20 are particularly preferable. These may have a substituent.

Hereinafter, structural examples of these alicyclic rings will be shown.

[0025]

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[0026]

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In the present invention, preferred examples of the alicyclic moiety include cyclopentyl, cyclohexyl, cyclooctyl, adamantyl, noradamantyl, decalin, tricyclodecanyl, and tetracyclododecanyl. Group, norbornyl group, cedrol group,
Examples thereof include a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, and a cyclododecanyl group. More preferred are an adamantyl group, a decalin residue, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, and a cyclododecanyl group.

Rna, Rnb, Rnc and Rne each have a linear or branched alkyl group and alicyclic hydrocarbon group having 1 to 20 carbon atoms, and an alicyclic ring formed by bonding Rna and Rnb to each other. Examples of the substituent which the formula ring may have include the following. Examples of the alkoxy group in the alkoxy group and the alkoxycarbonyl group include those having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group and a butoxy group. Examples of the halogen atom include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom. Examples of the acyl group include a formyl group and a benzoyl group. Examples of the acyloxy group include a propylcarbonyloxy group and a benzoyloxy group. An alicyclic hydrocarbon group as Rna, Rnb, Rnc, and Rne, and an alicyclic ring formed by combining Rna and Rnb with each other have, in addition to the above substituent, an alkyl group as a substituent. Is also good. For example, a group having 1 to 1 carbon atoms such as a methyl group, an ethyl group, a propyl group, and a butyl group.
4 can be mentioned.

In formula (NII), W is preferably t
-Butyl group, t-amyl group, 2-cyclohexyl-2-
Tertiary alkyl groups such as propyl group and 1-methylcyclohexyl group; alkoxymethyl groups such as ethoxymethyl group and ethoxyethoxymethyl group; 1-ethoxyethyl group;
A 1-alkoxyethyl group such as an isopropoxyethyl group,
Examples thereof include an adamantyl group, a decalin residue, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, and a cyclododecanyl group.

Hereinafter, specific examples of the monomer corresponding to the repeating structural unit represented by the general formula (NI) will be shown, but it should not be construed that the invention is limited thereto.

[0031]

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Hereinafter, specific examples of the monomer corresponding to the repeating structural unit represented by the general formula (NII) will be shown, but it should not be construed that the invention is limited thereto.

[0033]

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[0034]

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[0035]

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[0036]

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The acid-decomposable resin of the present invention further contains a repeating unit having a lactone structure represented by the above general formula (I). In the general formula (I), the alkylene group and the cycloalkylene group of A are the same as those mentioned as An in the formula (NII). The bridged alicyclic ring containing Z is
It may have a substituent. As the substituent, for example,
Halogen atom, alkoxy group (preferably having 1 to
4), an alkoxycarbonyl group (preferably having 1 to carbon atoms)
5), acyl group (for example, formyl group, benzoyl group), acyloxy group (for example, propylcarbonyloxy group, benzoyloxy group), alkyl group (preferably having 1 to 4 carbon atoms), carboxyl group, hydroxyl group, alkylsulfonylsulfur Famoyl group (-CONHSO ₂ CH ₃ etc.)
Is mentioned. The alkyl group as a substituent may be further substituted with a hydroxyl group, a halogen atom, an alkoxy group (preferably having 1 to 4 carbon atoms), or the like. In the general formula (I), the oxygen atom of the ester group bonded to A is Z
May be bonded at any position of the carbon atom constituting the bridged alicyclic ring structure. Hereinafter, specific examples of the repeating unit represented by the general formula (I) will be shown, but the invention is not limited thereto.

[0038]

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[0039]

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The acid-decomposable resin (A) of the present invention may further contain a repeating unit represented by the above formula (NIII).

In the general formula (NIII), Z ₁ represents —O—
Or —N (Rn ₆ ) —. Here, Rn ₆ represents a hydrogen atom, a hydroxyl group, or —O—SO ₂ —Rn ₇ . Rn ₇ is
Represents an alkyl group, a haloalkyl group, a cycloalkyl group or a camphor residue.

The alkyl group for Rn ₇ includes:
A linear or branched alkyl group having 1 to 10 carbon atoms is preferable, a linear or branched alkyl group having 1 to 6 carbon atoms is more preferable, and a methyl group, an ethyl group, and a propyl group are more preferable. Isopropyl group, n-butyl group, isobutyl group, sec-butyl group and t-butyl group.

Examples of the haloalkyl group for Rn ₇ include a trifluoromethyl group, a nanofluorobutyl group, a pentadecafluorooctyl group, and a trichloromethyl group. The cycloalkyl groups represented by Rn _7, cyclopentyl group, cyclohexyl group, and a cyclooctyl group.

Hereinafter, specific examples of the monomer corresponding to the repeating structural unit represented by the general formula (NIII) will be shown, but it should not be construed that the invention is limited thereto.

[0045]

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[0046]

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The acid-decomposable resin as the component (A) is, in addition to the above-mentioned repeating structural units, dry etching resistance, suitability for a standard developing solution, substrate adhesion, resist profile, and general necessary properties of a resist. Various repeating structural units can be contained for the purpose of adjusting resolution, heat resistance, sensitivity and the like.

Examples of such a repeating structural unit include, but are not limited to, repeating structural units corresponding to the following monomers. Thereby, the performance required for the acid-decomposable resin, in particular, (1) solubility in a coating solvent, (2) film-forming property (glass transition point),
Fine adjustment of (3) alkali developability, (4) film loss (hydrophobicity, selection of alkali-soluble group), (5) adhesion of unexposed portion to substrate, (6) dry etching resistance, etc. becomes possible. .

As such a monomer, for example, an addition polymerizable unsaturated bond selected from acrylates, methacrylates, acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters and the like can be used. And the like.

Specific examples include the following monomers. Acrylic esters (preferably alkyl acrylate having an alkyl group having 1 to 10 carbon atoms): methyl acrylate, ethyl acrylate, propyl acrylate, amyl acrylate, cyclohexyl acrylate, ethylhexyl acrylate, octyl acrylate, acrylic Acid-t-octyl, chloroethyl acrylate, 2-hydroxyethyl acrylate 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate,
Trimethylolpropane monoacrylate, pentaerythritol monoacrylate, benzyl acrylate,
Methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate and the like.

Methacrylic esters (preferably alkyl methacrylate having an alkyl group having 1 to 10 carbon atoms): methyl methacrylate, ethyl methacrylate,
Propyl methacrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate,
Cyclohexyl methacrylate, benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate, 2-hydroxyethyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, penta Erythritol monomethacrylate, furfuryl methacrylate, tetrahydrofurfuryl methacrylate and the like.

Acrylamides: acrylamide, N-
Alkyl acrylamide (the alkyl group has 1 carbon atom
And 10 such as methyl, ethyl, propyl, butyl, t-butyl, heptyl, octyl, cyclohexyl, and hydroxyethyl. ), N, N-dialkylacrylamide (alkyl group having 1 to 10 carbon atoms, for example, methyl group, ethyl group, butyl group, isobutyl group, ethylhexyl group,
A cyclohexyl group, etc.), N-hydroxyethyl-
N-methylacrylamide, N-2-acetamidoethyl-N-acetylacrylamide and the like.

Methacrylamides: methacrylamide,
N-alkyl methacrylamide (an alkyl group having 1 to 10 carbon atoms, such as a methyl group, an ethyl group,
Butyl group, ethylhexyl group, hydroxyethyl group, cyclohexyl group, etc.), N, N-dialkylmethacrylamide (alkyl group includes ethyl group, propyl group, butyl group, etc.), N-hydroxyethyl-N-
Methyl methacrylamide and the like.

Allyl compounds: allyl esters (eg, allyl acetate, allyl caproate, allyl caprylate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate, etc.), allyloxyethanol etc.

Vinyl ethers: alkyl vinyl ethers (eg, hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, chloroethyl vinyl ether,
-Methyl-2,2-dimethylpropyl vinyl ether,
2-ethylbutyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether,
Dimethylaminoethyl vinyl ether, diethylaminoethyl vinyl ether, butylaminoethyl vinyl ether, benzyl vinyl ether, tetrahydrofurfuryl vinyl ether and the like.

Vinyl esters: vinyl butyrate, vinyl isobutyrate, vinyl trimethyl acetate, vinyl diethyl acetate, vinyl valate, vinyl caproate, vinyl chloroacetate, vinyl dichloroacetate, vinyl methoxy acetate, vinyl butoxy acetate, vinyl Acetoacetate, vinyl lactate, vinyl-β-phenylbutyrate, vinylcyclohexylcarboxylate and the like.

Dialkyl itaconates: dimethyl itaconate, diethyl itaconate, dibutyl itaconate and the like. Dialkyl esters or monoalkyl esters of fumaric acid; dibutyl fumarate;

Others crotonic acid, itaconic acid, acrylonitrile, methacrylonitrile, maleilenitrile and the like.

In addition, as long as it is an addition-polymerizable unsaturated compound copolymerizable with the monomer corresponding to the above-mentioned various repeating structural units, it may be copolymerized.

In the acid-decomposable resin, the molar ratio of each repeating structural unit depends on the dry etching resistance of the resist, the suitability for a standard developing solution, the substrate adhesion, the resist profile, and the resolving power, heat resistance, which is a general required performance of the resist. It is set as appropriate to adjust properties, sensitivity, and the like.

The content of the repeating structural unit represented by the general formula (NI) in the acid-decomposable resin is preferably 25 to 70 mol%, more preferably 28 to 70 mol%, based on all the repeating structural units.
~ 65 mol%, more preferably 30 ~ 60 mol%. In the acid-decomposable resin, the content of the repeating structural unit represented by the general formula (NII) is defined as
It is preferably from 2 to 50 mol%, more preferably from 4 to 45 mol%, even more preferably from 6 to 40 mol%. The content of the repeating structural unit having a group represented by the general formula (I) in the acid-decomposable resin is preferably 1 to 40 mol%, more preferably 3 to 30 mol%, and more preferably 3 to 30 mol% of all the repeating structural units. Preferably it is 5 to 20 mol%. In the acid-decomposable resin, the content of the repeating structural unit represented by the general formula (NIII) is preferably from 20 to 80 mol%, more preferably from 25 to 70 mol%, even more preferably from 30 to 60 mol%, based on all repeating structural units. Mol%.

The content of the repeating structural unit in the resin based on the monomer of the further copolymer component can be appropriately set according to the desired resist properties. It is preferably at most 99 mol%, more preferably at most 90 mol%, even more preferably at most 80 mol%, based on the total number of moles of the repeating structural units represented by (NI) and (NII). In addition, the composition of the present invention is A
When used for rF exposure, the acid-decomposable resin preferably does not contain an aromatic ring from the viewpoint of transparency to ArF light.

The molecular weight of the acid-decomposable resin as described above is weight average (Mw: value in terms of polystyrene by GPC method).
In the range of preferably from 1,000 to 1,000,000, more preferably from 1,500 to 500,000, further preferably from 2,000 to 200,000, and still more preferably from 2,500 to 100,000. Yes, the bigger,
While the heat resistance and the like are improved, the developability and the like are lowered, and the balance is adjusted to a preferable range by these balances. The acid-decomposable resin used in the present invention can be synthesized according to a conventional method (for example, radical polymerization).

In the positive photoresist composition of the present invention, the amount of the acid-decomposable resin in the whole resist composition is preferably 40 to 99.99% by weight, more preferably 50 to 99.99% by weight, based on the total solid content. 97% by weight.

Preferred specific examples of combinations of repeating structural units of the acid-decomposable resin (A) are shown below.

[0066]

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[0067]

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[2] (B) Compound that Generates Acid by Irradiation with Actinic Ray or Radiation (Photoacid Generator) The photoacid generator used in the present invention is a compound that generates an acid by irradiation with actinic ray or radiation. It is. As the photoacid generator used in the present invention, a photoinitiator for photocationic polymerization, a photoinitiator for photoradical polymerization, a photodecolorant for dyes, a photochromic agent, or a microresist is used. Publicly known light (ultraviolet light of 400 to 200 nm, far ultraviolet light, particularly preferably g-ray, h-ray, i-ray, KrF excimer laser light), ArF excimer laser light, electron beam, X-ray,
A compound that generates an acid by a molecular beam or an ion beam and a mixture thereof can be appropriately selected and used.

Other photoacid generators used in the present invention include, for example, onium salts such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts, arsonium salts and the like.
Organic halogen compound, organic metal / organic halide, o
A photoacid generator having a nitrobenzyl-type protecting group; a compound represented by photolysis such as iminosulfonate that generates sulfonic acid; a disulfone compound; a diazoketosulfone; and a diazodisulfone compound.
Further, a group in which an acid is generated by such light or a compound in which a compound is introduced into a main chain or a side chain of a polymer can be used.

Further, VNRPillai, Synthesis, (1), 1 (198
0), A. Abad etal, Tetrahedron Lett., (47) 4555 (1971),
Compounds that generate an acid by light described in DHR Barton et al., J. Chem. Soc., (C), 329 (1970), U.S. Pat. No. 3,779,778, and EP 126,712 can also be used.

Among the compounds which decompose upon irradiation with an electron beam to generate an acid, those which are particularly effectively used will be described below. (1) The following general formula (PAG) substituted with a trihalomethyl group
The oxazole derivative represented by 1) or the general formula (PAG)
An S-triazine derivative represented by 2).

[0072]

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In the formula, R ²⁰¹ is a substituted or unsubstituted aryl group or alkenyl group, and R ²⁰² is a substituted or unsubstituted aryl group, alkenyl group, alkyl group, —C (Y) ₃
Show Y represents a chlorine atom or a bromine atom. Specific examples include the following compounds, but the present invention is not limited thereto.

[0074]

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(2) An iodonium salt represented by the following formula (PAG3) or a sulfonium salt represented by the following formula (PAG4).

[0076]

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The formulas Ar ¹ and Ar ² each independently represent a substituted or unsubstituted aryl group. R ²⁰³ , R ²⁰⁴ ,
R ²⁰⁵ each independently represents a substituted or unsubstituted alkyl group or aryl group.

Z ^- represents a counter anion, for example, B
F ₄ ⁻ , AsF ₆ ⁻ , PF ₆ ⁻ , SbF ₆ ⁻ , SiF ₆ ²⁻ , Cl
Condensed polynuclear aromatic sulfonic acid anions such as perfluoroalkanesulfonic acid anions such as O ₄ ⁻ and CF ₃ SO ₃ ⁻ , pentafluorobenzenesulfonic acid anion, naphthalene-1-sulfonic acid anion, anthraquinonesulfonic acid anion and sulfonic acid group Dyes and the like may be included, but are not limited thereto.

Further, two of R ²⁰³ , R ²⁰⁴ and R ²⁰⁵ and Ar ¹ and Ar ² may be bonded through a single bond or a substituent.

Specific examples include the following compounds, but are not limited thereto.

[0081]

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[0082]

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[0083]

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[0084]

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[0085]

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[0086]

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[0087]

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[0088]

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[0089]

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In the above, Ph represents a phenyl group.
The onium salts represented by the general formulas (PAG3) and (PAG4) are known and can be synthesized, for example, by the methods described in U.S. Pat. Nos. 2,807,648 and 4,247,473 and JP-A-53-101,331. .

(3) Disulfone derivatives represented by the following formula (PAG5) or iminosulfonate derivatives represented by the following formula (PAG6).

[0092]

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In the formula, Ar ³ and Ar ⁴ each independently represent a substituted or unsubstituted aryl group. R ²⁰⁶ represents a substituted or unsubstituted alkyl group or aryl group. A represents a substituted or unsubstituted alkylene group, alkenylene group, or arylene group. Specific examples include the following compounds, but are not limited thereto.

[0094]

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[0095]

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[0096]

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[0097]

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[0098]

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(4) A diazodisulfone derivative represented by the following general formula (PAG7).

[0100]

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Here, R represents a linear, branched or cyclic alkyl group, or an optionally substituted aryl group. Specific examples include the following compounds, but are not limited thereto.

[0102]

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[0103]

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The amount of the photoacid generator to be added is generally in the range of 0.001 to 30% by weight, preferably 0.3 to 20% by weight, more preferably 0.3 to 20% by weight, based on the solid content in the composition. Is used in the range of 0.5 to 10% by weight. If the amount of the photoacid generator is less than 0.001% by weight, the sensitivity tends to be low. If the amount is more than 30% by weight, the light absorption of the resist becomes too high, and the profile is deteriorated and the process is deteriorated. The margin (especially baking) tends to be narrow.

[3] (C) Organic Basic Compound The preferred (C) organic basic compound that can be used in the present invention is a compound that is more basic than phenol. Among them, a nitrogen-containing basic compound is preferable. (C) Addition of an organic basic compound improves sensitivity variation with time. Examples of the organic basic compound (C) include compounds having the following structures.

[0106]

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Here, R²⁵⁰, R²⁵¹And R²⁵²Are each
Independently, a hydrogen atom, an alkyl group having 1 to 6 carbon atoms,
1-6 aminoalkyl groups, hydroxy having 1-6 carbon atoms
Alkyl group or substituted or unsubstituted 6 to 20 carbon atoms
An aryl group, where R ²⁵¹And R²⁵²Are connected to each other
To form a ring.

[0108]

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(Wherein R ²⁵³ , R ²⁵⁴ , R ²⁵⁵ and R
²⁵⁶ independently represent an alkyl group having 1 to 6 carbon atoms.) Further preferred compounds are nitrogen-containing basic compounds having two or more nitrogen atoms having different chemical environments in one molecule,
Particularly preferred are compounds containing both a substituted or unsubstituted amino group and a ring structure containing a nitrogen atom, or compounds having an alkylamino group. Preferred specific examples include substituted or unsubstituted guanidine, substituted or unsubstituted aminopyridine, substituted or unsubstituted aminoalkylpyridine, substituted or unsubstituted aminopyrrolidine, substituted or unsubstituted indazol, substituted or unsubstituted Pyrazole, substituted or unsubstituted pyrazine,
Substituted or unsubstituted pyrimidine, substituted or unsubstituted purine, substituted or unsubstituted imidazoline, substituted or unsubstituted pyrazoline, substituted or unsubstituted piperazine, substituted or unsubstituted aminomorpholine, substituted or unsubstituted amino And alkyl morpholine. Preferred substituents are an amino group, an aminoalkyl group, an alkylamino group, an aminoaryl group, an arylamino group, an alkyl group, an alkoxy group, an acyl group, an acyloxy group, an aryl group, an aryloxy group, a nitro group,
A hydroxyl group and a cyano group.

Preferred examples of the nitrogen-containing basic compound include guanidine, 1,1-dimethylguanidine,
1,3,3, -tetramethylguanidine, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine,
-Dimethylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2- (aminomethyl) pyridine, 2-amino-3-methylpyridine, 2-
Amino-4-methylpyridine, 2-amino-5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethylpyridine, 4-aminoethylpyridine, 3-aminopyrrolidine, piperazine, N- (2-amino Ethyl) piperazine, N- (2-aminoethyl) piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-piperidinopiperidine, 2-iminopiperidine, 1- (2-aminoethyl) Pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-
3-methyl-1-p-tolylpyrazole, pyrazine, 2
-(Aminomethyl) -5-methylpyrazine, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2-pyrazoline, 3-pyrazoline, N-
Aminomorpholine, N- (2-aminoethyl) morpholine, 1,5-diazabicyclo [4.3.0] nona-
5-ene, 1,8-diazabicyclo [5.4.0] undec-7-ene, 1,4-diazabicyclo [2.2.2]
Octane, 2,4,5-triphenylimidazole, N
-Methylmorpholine, N-ethylmorpholine, N-hydroxyethylmorpholine, N-benzylmorpholine, cyclohexylmorpholinoethylthiourea (CHMET
U) and other tertiary morpholine derivatives, JP-A-11-5257
No. 5 hindered amines (for example, those described in the gazette [0005]) and the like, but are not limited thereto.

Particularly preferred specific examples are 1,5-diazabicyclo [4.3.0] non-5-ene, 1,8-diazabicyclo [5.4.0] undec-7-ene, 1,4-diazabicyclo [2.2.2] Tertiary morpholines such as octane, 4-dimethylaminopyridine, hexamethylenetetramine, 4,4-dimethylimidazoline, pyrroles, pyrazoles, imidazoles, pyridazines, pyrimidines, CHMETU, etc., and bis Hindered amines such as (1,2,2,6,6-pentamethyl-4-piperidyl) sebagate and the like can be mentioned. Among them, 1,5-diazabicyclo [4.3.0] non-5-ene, 1,8-
Diazabicyclo [5.4.0] undec-7-ene,
1,4-diazabicyclo [2.2.2] octane, 4-
Dimethylaminopyridine, hexamethylenetetramine,
CHMETU, bis (1,2,2,6,6-pentamethyl-4-piperidyl) sebagate is preferred.

These organic basic compounds are used alone or in combination of two or more. The amount of the organic basic compound to be used is generally 0.001 to 10% by weight, preferably 0.1 to 10% by weight, based on the solid content of the entire photosensitive resin composition.
01 to 5% by weight. If the amount is less than 0.001% by weight, the effect of the addition of the organic basic compound cannot be obtained. Meanwhile, 1
If it exceeds 0% by weight, the sensitivity tends to decrease and the developability of the unexposed area tends to deteriorate.

[4] (D) Fluorine and / or Silicon Surfactant The positive photoresist composition of the present invention preferably contains a fluorine and / or silicon surfactant.
The positive photoresist composition of the present invention may contain a fluorine-based surfactant, a silicon-based surfactant, or a surfactant containing both a fluorine atom and a silicon atom, or may contain two or more kinds. preferable. When the positive photoresist composition of the present invention contains the above-mentioned acid-decomposable resin and the above-mentioned surfactant, the density dependency is improved.

As these surfactants, for example, those described in
No. 62-36663, JP-A-61-226746, JP-A-61-226745,
JP-A-62-170950, JP-A-63-34540, JP-A-7-23016
No. 5, JP-A-8-62834, JP-A-9-54432, JP-A-9-598
No. 8, U.S. Pat.No. 5,405,720, No. 5360692, No. 5529881,
No. 5296330, No. 5436098, No. 5576143, No. 5294511
And No. 5824451. The following commercially available surfactants can also be used as they are. As commercially available surfactants that can be used, for example, F-top EF301, EF303, (manufactured by Shin-Akita Chemical Co., Ltd.), Florad FC
430, 431 (Sumitomo 3M Limited), Mega Fuck F171,
F173, F176, F189, R08 (Dai Nippon Ink Co., Ltd.), Surflon S-382, SC101, 102, 103, 104, 105, 106 (Asahi Glass Co., Ltd.), Troysol S-366 (Troy Chemical Co., Ltd.) )) Or a silicon-based surfactant. Also, polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used as a silicon-based surfactant.

The amount of the surfactant is usually 0.001 to 2% by weight, preferably 0.01 to 1% by weight, based on the solid content in the composition of the present invention. These surfactants may be added alone or in some combination. Examples of the surfactant that can be used in addition to the above include, specifically, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether. , Polyoxyethylene alkyl allyl ethers such as polyoxyethylene octyl phenol ether, polyoxyethylene nonyl phenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan Sorbitan fatty acid esters such as monooleate, sorbitan trioleate, sorbitan tristearate, polyoxyethylene sorbitan Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as laurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate And the like. The amount of these other surfactants is usually 2 parts by weight or less, preferably 1 part by weight or less, per 100 parts by weight of the solids in the composition of the present invention.

The positive photoresist composition of the present invention comprises
As a coating solvent, for example, propylene glycol monomethyl ether acetate, propylene glycol monoalkyl ether acetates such as propylene glycol monoethyl ether acetate, propylene glycol monoalkyl ether carboxylates, methyl lactate, alkyl lactates such as ethyl lactate, propylene Propylene glycol monoalkyl ethers such as glycol monomethyl ether and propylene glycol monoethyl ether; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monomethyl ether acetate; ethylene glycol monoethyl ether acetate; Ethylene glycol monoalkyl ester Teracetates, 2-heptanone, γ-butyrolactone, alkyl methoxypropionates, alkyl ethoxylates such as ethyl ethoxypropionate, alkyl pyruvates such as methyl pyruvate, ethyl pyruvate, N-methylpyrrolidone, N , N-dimethylacetamide, dimethylsulfoxide, acetate, chain ketone, ethylene carbonate, propylene carbonate and the like.

In the present invention, the solid content of the resist composition containing each of the above components is defined as a solid content concentration in the above solvent.
Preferably 3 to 25% by weight, more preferably 5 to 22% by weight, still more preferably 7 to 20% by weight is used.

The positive photoresist composition of the present invention may further contain an acid-decomposable dissolution inhibiting compound, a dye,
A plasticizer, a photosensitizer, a compound that promotes solubility in a developer, and the like can be contained.

Such a positive photoresist composition of the present invention is applied on a substrate to form a thin film. The thickness of this coating film is preferably from 0.2 to 1.2 μm. In the present invention, if necessary, a commercially available inorganic or organic antireflection film can be used.

As the antireflection film, an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon and α-silicon, and an organic film type comprising a light absorbing agent and a polymer material can be used. The former requires equipment such as a vacuum deposition apparatus, a CVD apparatus, and a sputtering apparatus for film formation. As the organic antireflection film, for example, Japanese Patent Publication No. 7-69
No. 611, consisting of a condensate of a diphenylamine derivative and a formaldehyde-modified melamine resin, an alkali-soluble resin, and a light absorbing agent; a reaction product of a maleic anhydride copolymer and a diamine type light absorbing agent described in US Pat. No. 5,294,680; No. 6,118,631 containing a resin binder and a methylolmelamine-based thermal crosslinking agent; Japanese Patent Application Laid-Open No. 6-118656, an acrylic resin type antireflection film having a carboxylic acid group, an epoxy group and a light absorbing group in the same molecule; JP-A-8-87115, comprising a methylolmelamine and a benzophenone-based light-absorbing agent;
No. 79509 in which a low molecular weight light absorbing agent is added to a polyvinyl alcohol resin. As an organic anti-reflection film, DUV3 manufactured by Brewer Science Co., Ltd.
0 series, DUV-40 series, AC-2 and AC-3 manufactured by Shipley Co. can also be used.

The resist solution is applied on a substrate (eg, a silicon / silicon dioxide coating) used for manufacturing precision integrated circuit devices (on a substrate provided with the above antireflection film if necessary), a spinner, a coater, and the like. After coating by an appropriate coating method such as that described above, exposure through a predetermined mask, baking and development can provide a good resist pattern. Here, the exposure light is preferably 150
It is light having a wavelength of nm to 250 nm. Specifically, Kr
F excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157
nm), X-rays, electron beams and the like.

Examples of the developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia.
Primary amines such as ethylamine and n-propylamine;
Secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcoholamines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide and the like An alkaline aqueous solution such as a quaternary ammonium salt, a cyclic amine such as pyrrole, or pyrhelidine can be used. Further, an appropriate amount of an alcohol or a surfactant may be added to the above alkaline aqueous solution.

[0123]

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the following examples.

(1) Synthesis of Resin (1) Norbornene and t-
Butyl acrylate, maleic anhydride and the lactone monomer of the present invention in a molar ratio of 32.5 / 20 / 32.5 / 15
, And dissolved in methyl ethyl ketone to prepare a solution having a solid content of 60%. This is placed in a nitrogen stream at 60 ° C.
And heated. When the reaction temperature was stabilized, 1.5 mol% of a radical initiator V-601 manufactured by Wako Pure Chemical Industries, Ltd. was added to start the reaction. After heating for 10 hours, the reaction mixture was diluted 2-fold with methyl ethyl ketone, and then poured into a 5-fold amount of a mixed solvent of tert-butyl methyl ether / hexane = 1/3 to precipitate a white powder. The precipitated powder was dissolved again in methyl ethyl ketone and poured into a 5-fold amount of a mixed solvent of tert-butyl methyl ether / hexane = 1/3 to precipitate a white powder, which was filtered out, dried, and dried to obtain the resin (1). ) Got. When molecular weight analysis of the obtained resin (1) by GPC was attempted, it was 16400 (weight average) in terms of polystyrene. Also, from the NMR spectrum, the resin (1)
Was 27/18/44/11 in molar ratio of norbornene / t-butyl acrylate / maleic anhydride / lactone monomer of the present invention. Hereinafter, resins (2) to (9) were synthesized in the same manner. Table 1 shows the composition ratio and the weight average molecular weight (Mw) of the resin.

[0125]

[Table 1]

Examples 1 to 18 and Comparative Example 1 (Preparation and Evaluation of Positive Photoresist Composition) As shown in Table 2, 2 g of the resin synthesized in the above synthesis example, a photoacid generator (addition amount was 2), 5 mg of a surfactant and 5 mg of an organic basic compound were blended, dissolved in a solvent shown in Table 2 so as to have a solid content of 10% by weight, and filtered through a 0.1 μm microfilter. 1 to 18 positive resist compositions were prepared. As Comparative Example 1, a positive resist composition was prepared in the same manner using the resins, photoacid generators, and solvents shown in Table 2.

As the solvent, S1: propylene glycol monomethyl ether acetate S2: ethyl lactate S3: butyl acetate S4: 2-heptanone S5: propylene glycol monomethyl ether S6: ethoxyethyl propionate S7: γ-butyrolactone S8: ethylene carbonate S9 : Propylene carbonate

As the surfactant, W-1: Megafac F176 (Dainippon Ink Co., Ltd.)
(Fluorine) W-2: Megafac R08 (Dai Nippon Ink Co., Ltd.)
(Fluorine and silicon type) W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) W-4: Polyoxyethylene nonyl phenyl ether W-5: Troysol S-366 (Troy Chemical Co., Ltd.)
Made)

Examples of the organic basic compound include: 1: DBU (1,8-diazabicyclo [5.4.0]-
7-undecene) 2: 4-DMAP (4-dimethylaminopyridine) 3: TPI (2,4,5-triphenylimidazole)

Resin used in Comparative Example 1 Resin R: Copolymer 3 synthesized in Examples of JP-A-2000-122294 (structure below)

[0131]

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[0132]

[Table 2]

(Evaluation Test) The above-prepared resist solution was applied onto a silicon wafer, baked at 130 ° C. for 90 seconds, and applied to a thickness of 0.20 μm.

The wafer thus obtained was placed in an ArF excimer laser stepper (ArF exposure machine 930 manufactured by ISI).
In 0), a resolving power mask was loaded and exposure was performed while changing the exposure amount. Thereafter, the film was heated at 135 ° C. for 90 seconds in a clean room, developed with a tetramethylammonium hydroxide developer (2.38% by weight) for 60 seconds, rinsed with distilled water and dried to obtain a pattern.

[Line Edge Roughness] In the range of 5 μm in the longitudinal direction edge of the 140 nm line pattern obtained by the minimum exposure amount for reproducing the 140 nm line pattern in the mask, the distance from the reference line where the edge should be set to (stock) ) 50 by Hitachi S-8840
The points were measured, the standard deviation was determined, and 3σ was calculated.
The smaller the value, the better the performance.

[Development defect]: 6 inch Bare Si
Each resist film was applied to a thickness of 0.5 μm on the substrate, and dried at 130 ° C. for 60 seconds on a vacuum suction hot plate. Next, a 0.20 μm contact hole pattern (Hole)
ArF via a test mask with a duty ratio = 1: 3)
After exposure with an excimer laser stepper (ArF exposure machine 9300 manufactured by ISI), post-exposure heating was performed at 135 ° C. for 90 seconds. Subsequently, paddle development was performed with 2.38% by weight of TMAH (aqueous tetramethylammonium hydroxide solution) for 60 seconds, followed by washing with pure water for 30 seconds and spin drying. The number of development defects of the sample thus obtained was measured with a KLA-2112 machine manufactured by KLA Tencor Co., Ltd., and the obtained primary data value was defined as the number of development defects. Table 3 shows the evaluation results.

[0137]

[Table 3]

As shown in Table 3, it is found that the positive photoresist composition of the present invention has reduced line edge roughness and development defects.

[0139]

According to the present invention, it is possible to provide a positive photoresist composition in which the occurrence of line edge roughness and development defects is reduced in the production of semiconductor devices.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H025 AA03 AB16 BE00 BE07 BE10 BG00 CB06 CB10 CB43 CC04 CC20 FA17 4J002 BG04X BG07X BG07Y BH024 CE00W CH055 EB006 EH007 EH037 EH157 EN136 EQ006 EV266 EV296 EW176 FD 315

Claims (3)

[Claims] (A) A repeating structural unit represented by the following general formula (NI), a repeating structural unit represented by the following general formula (NII), and a repeating structural unit represented by the following general formula (I) A positive photoresist composition comprising: a resin whose dissolution rate in an alkali developer is increased by the action of an acid; and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation. Embedded image Embedded image Embedded image In Formula (NI), Rn _{1 to} Rn ₄ each independently represent a hydrogen atom or an alkyl group which may have a substituent. a is 0
Or 1. In formula (NII), Rn ₅ represents a hydrogen atom or a methyl group. An represents a single bond, an alkylene group, a cycloalkylene group, an ether group, a thioether group, a carbonyl group, or a combination of two or more groups selected from the group consisting of ester groups. W
Represents a group represented by -C (Rna) (Rnb) (Rnc) or a group represented by -CH (Rnd) -O-Rne. Here, Rna, Rnb, and Rnc each represent a straight-chain having 1 to 20 carbon atoms which may have a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group or an acyloxy group as a substituent. It represents a chain or branched alkyl group or an alicyclic hydrocarbon group. However, Rna and Rnb may be bonded to each other to form an alicyclic ring together with the carbon atoms commonly bonded. In this case, Rnc is an alkyl group having 1 to 4 carbon atoms. R
nd represents a hydrogen atom or an alkyl group. Rne
May have a halogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group or an acyloxy group as a substituent, and may have a linear or branched alkyl group having 1 to 20 carbon atoms or an alicyclic group. Represents a hydrocarbon group. In the general formula (I), A represents a single bond, an alkylene group, a cycloalkylene group, an ether group, a thioether group, a carbonyl group, or an ester group, or a combination of two or more groups. R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a cyano group, or a halogen atom. (2) The resin (A) further has the following general formula (NII)
The positive photoresist composition according to claim 1, comprising a repeating structural unit represented by I). Embedded image In the formula (NIII), Z ₁ represents —O— or —N (Rn ₆ ) —. Here, Rn ₆ is a hydrogen atom, a hydroxyl group or —OSO ₂
Representing the -Rn _7. Rn ₇ represents an alkyl group, a haloalkyl group, a cycloalkyl group or a camphor residue. 3. An organic basic compound (D) and (E)
The positive photoresist composition according to claim 1, further comprising a fluorine-based and / or silicon-based surfactant.