JP2002030488A - Dispersive plating method by electromagnetic agitation - Google Patents

Dispersive plating method by electromagnetic agitation

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Publication number
JP2002030488A
JP2002030488A JP2000220000A JP2000220000A JP2002030488A JP 2002030488 A JP2002030488 A JP 2002030488A JP 2000220000 A JP2000220000 A JP 2000220000A JP 2000220000 A JP2000220000 A JP 2000220000A JP 2002030488 A JP2002030488 A JP 2002030488A
Authority
JP
Japan
Prior art keywords
plating
dispersion
dispersant
plated
eutectoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000220000A
Other languages
Japanese (ja)
Other versions
JP3361793B2 (en
Inventor
Takashi Yamada
隆志 山田
Shigeo Asai
滋生 浅井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CITY OF NAGOYA
Original Assignee
CITY OF NAGOYA
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Filing date
Publication date
Application filed by CITY OF NAGOYA filed Critical CITY OF NAGOYA
Priority to JP2000220000A priority Critical patent/JP3361793B2/en
Publication of JP2002030488A publication Critical patent/JP2002030488A/en
Application granted granted Critical
Publication of JP3361793B2 publication Critical patent/JP3361793B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a dispersive plating method capable of realizing the uniform eutectic of the dispersant of sufficient amount in order to give the function in a plating film, having high rate of utilization of the dispersant and high plating speed, and capable of controlling the eutectic ratio of the dispersant and the eutectic mode of the dispersant particles. SOLUTION: In the dispersive plating method comprising a first step of installing a work 2 and a facing electrode 3 in a plating solution, a second step of bringing the dispersant for the eutectic in the plating film into contact with the work 2, and a third step of realizing the precipitation of the plating metal and the eutectic of the dispersant by running the direct current from an external power supply 5 so that the work 2 forms a cathode and the facing electrode 3 forms an anode, the plating is implemented by applying the magnetic field so as to generate the line of magnetic force parallel to the direction of the current running in the plating solution 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、分散めっき法に関
する。
[0001] The present invention relates to a dispersion plating method.

【0002】[0002]

【従来の技術】従来、めっき皮膜の新たな機能性付与を
目的として、分散めっき法が開発され、実用化されてい
る。このめっき法は、めっき浴中に分散材を存在させた
状態でめっきを行うことにより、めっき皮膜中に分散材
粒子を共析させる技術である。この方法によれば、共析
させる分散材を選択することにより、各種の機能を有す
るめっき皮膜を得ることができる。例えば分散材として
アルミナやダイヤモンド等の高い硬度の粉末を用いれ
ば、耐摩耗性のめっき皮膜を得ることができる。また、
テフロン(登録商標)粉末等の固体潤滑材を用いれば、
潤滑性に優れためっき皮膜を得ることができる。
2. Description of the Related Art Conventionally, a dispersion plating method has been developed and put to practical use for the purpose of imparting new functionality to a plating film. This plating method is a technique in which dispersant particles are eutectoid in a plating film by performing plating in a state where a dispersant is present in a plating bath. According to this method, a plating film having various functions can be obtained by selecting a dispersant to be eutectoid. For example, when a powder of high hardness such as alumina or diamond is used as the dispersing material, a wear-resistant plating film can be obtained. Also,
If a solid lubricant such as Teflon (registered trademark) powder is used,
It is possible to obtain a plating film having excellent lubricity.

【0003】この分散めっき法において、めっき皮膜中
に均一に分散材を共析させるためには、分散材をめっき
液中に均一に懸濁させておくことが必要となる。このた
め、めっき中においては、空気の吹き込みや、ポンプに
よるめっき液の流動、あるいはプロペラの回転等の方法
によりめっき液を攪拌しつつ、めっきが行われていた。
In this dispersion plating method, it is necessary to uniformly suspend the dispersant in a plating solution in order to uniformly eutect the dispersant in the plating film. Therefore, during plating, plating has been performed while stirring the plating solution by a method such as blowing air, flowing a plating solution by a pump, or rotating a propeller.

【0004】[0004]

【発明が解決しようとする課題】しかし、このような攪
拌方法では、比重の大きな分散材や粒子径の大きな分散
材をめっき液中に均一に懸濁させておくことは困難であ
り、このような分散材をめっき皮膜中に均一かつ十分な
量で共析させることができないという欠点があった。ま
た、均一懸濁が可能な分散材であってもめっき皮膜中へ
の分散材の共析率には一定の限界があり、機能性を発揮
するには不十分な場合も多く、他方、分散材の利用率も
低いものであるという欠点もあった。さらには、このよ
うな分散めっき法では、分散材の共析率のコントロール
や、分散材粒子の共析状態を一定方向に揃えたり、繊維
状の分散材をめっき皮膜中に配向させたりすることは困
難であった。
However, with such a stirring method, it is difficult to uniformly suspend a dispersion material having a large specific gravity or a dispersion material having a large particle diameter in a plating solution. There is a drawback that a uniform and sufficient amount of a dispersant cannot be co-deposited in the plating film. In addition, even for a dispersant capable of uniform suspension, there is a certain limit to the eutectoid rate of the dispersant in the plating film, and in many cases, it is insufficient to exhibit its functionality. There was also a disadvantage that the utilization rate of the material was low. Furthermore, in such a dispersion plating method, it is necessary to control the eutectoid rate of the dispersing material, align the eutectoid state of the dispersing material particles in a certain direction, or orient the fibrous dispersing material in the plating film. Was difficult.

【0005】これに対し、分散材を添加しためっき液中
に水平に被めっき物を設置し、間欠的にめっき液の攪拌
を行い、攪拌停止時に沈降する分散材を取り込みながら
めっきすることにより、めっき皮膜中に分散材を共析さ
せる方法も実施されている(いわゆる沈降共析法)。こ
の方法によれば、比重の大きな分散材や粒子径の大きな
分散材であっても、均一かつ十分な共析率のめっき皮膜
を得ることは可能であり、分散材の利用率も高い。
On the other hand, the plating object is placed horizontally in the plating solution to which the dispersing agent is added, the plating solution is intermittently stirred, and plating is performed while taking in the dispersing agent which settles when the stirring is stopped. A method of eutecting a dispersant into a plating film has also been practiced (so-called sedimentation eutectoid method). According to this method, even with a dispersant having a large specific gravity or a dispersant having a large particle diameter, it is possible to obtain a plating film having a uniform and sufficient eutectoid rate, and the utilization factor of the dispersant is high.

【0006】しかし、この方法ではめっきを行っている
際にめっき液を攪拌することができないことや、沈降し
てくる分散材が被めっき物表面に堆積することが原因で
限界電流密度が低下するために、めっきは比較的低い速
度で行わなければ、良好なめっきが得られないという欠
点が存在する。また、分散材の共析率をコントロールす
ることや、分散材粒子を一定方向に並べたり、繊維状の
分散材をめっき皮膜中に配向させたりすることは、未だ
困難である。
However, in this method, the limiting current density is reduced due to the inability to stir the plating solution during plating and the deposition of the settling dispersant on the surface of the object to be plated. Therefore, there is a disadvantage that good plating cannot be obtained unless plating is performed at a relatively low speed. Further, it is still difficult to control the eutectoidity of the dispersant, to arrange the dispersant particles in a certain direction, or to orient the fibrous dispersant in the plating film.

【0007】また、この他の分散めっき法として、被め
っき物をめっき液は通過するが分散材は通過し得ないメ
ッシュで囲み、そのメッシュ内に分散材を高濃度で存在
せしめ、めっきを短時間行って分散材をめっき表面に保
持させた後(仮止め工程)、被めっき物を取り出し、通
常のめっきを行うことで分散材を埋め込む(埋め込み工
程)という分散めっき法もある(いわゆる仮止め法)。
この方法によれば、比重の大きな分散材や粒子径の大き
な分散材であっても、均一かつ十分な共析率のめっき皮
膜を得ることは可能であり、分散材の利用率も比較的高
い。
[0007] As another dispersion plating method, a plating object is surrounded by a mesh through which a plating solution passes but a dispersion material cannot pass, and a high concentration of the dispersion material is present in the mesh to shorten the plating time. There is also a dispersion plating method in which after a certain period of time, the dispersing material is held on the plating surface (temporary fixing step), the object to be plated is taken out, and the dispersing material is embedded by performing normal plating (embedding step) (so-called temporary fixing). Law).
According to this method, even with a dispersant having a large specific gravity or a dispersant having a large particle diameter, it is possible to obtain a plating film having a uniform and sufficient eutectoid rate, and the utilization rate of the dispersant is relatively high. .

【0008】しかし、この方法では仮止め工程と埋め込
み工程の二段階のめっき工程を要することから、生産性
に劣るという欠点がある。また、仮止め工程においては
メッシュ内に分散材を高濃度で存在せしめてめっきを行
うため、正常なめっき皮膜が形成されがたく、密着性に
欠ける分散めっき皮膜となるおそれがある。さらに、分
散材の共析率をコントロールすることや、分散材粒子を
一定方向に並べたり、繊維状の分散材をめっき皮膜中に
配向させたりすることは、やはり困難である。
However, this method has a drawback that the productivity is inferior since two plating steps of a temporary fixing step and an embedding step are required. In addition, in the temporary fixing step, since the plating is carried out with a high concentration of the dispersing material present in the mesh, a normal plating film is difficult to be formed, and there is a possibility that the dispersion plating film lacks adhesion. Furthermore, it is still difficult to control the eutectoidity of the dispersant, to arrange the dispersant particles in a certain direction, or to orient the fibrous dispersant in the plating film.

【0009】本発明は、上記従来の分散めっき技術の問
題点に鑑み、めっき皮膜中に機能を付与させるために十
分な量の分散材を均一に共析させることが可能であり、
分散材の利用率が高く、めっき速度が速く、分散材の共
析率や分散材の共析形態をコントロールすることが可能
な分散めっき法を提供することを解決すべき課題とす
る。
The present invention has been made in view of the above-mentioned problems of the conventional dispersion plating technique, and enables a sufficient amount of a dispersant to be uniformly eutectoid in order to impart a function to a plating film.
An object of the present invention is to provide a dispersion plating method in which the utilization rate of a dispersant is high, the plating rate is high, and the eutectoid rate of the dispersant and the eutectoid form of the dispersant can be controlled.

【0010】[0010]

【課題を解決するための手段】本発明の分散めっき法
は、めっき液中に、被めっき物と対極とを設置する第1
工程と、該被めっき物に、めっき皮膜中に共析させるた
めの分散材を接触させる第2工程と、該被めっき物をカ
ソードとし、該対極をアノードとなるように外部電源か
ら直流電流を通ずることにより、めっき金属の析出とと
もに該分散材を共析させる第3工程とからなる分散めっ
き法において、前記めっき液中に流れる電流の向きに対
し略平行方向に磁力線が生ずるように磁場を印加しなが
らめっきを行うことを特徴とする。
According to the dispersion plating method of the present invention, there is provided a method of disposing a plating object and a counter electrode in a plating solution.
A second step of contacting the object to be plated with a dispersing material for causing eutectoid in a plating film; and applying a direct current from an external power supply so that the object to be plated serves as a cathode and the counter electrode serves as an anode. In the dispersion plating method comprising the third step of evaporating the dispersing material together with the deposition of the plating metal by applying the magnetic field, a magnetic field is applied so that the magnetic force lines are generated in a direction substantially parallel to the direction of the current flowing in the plating solution. It is characterized by performing plating while performing.

【0011】本発明では、被めっき物に、めっき皮膜中
に共析させるための分散材を接触させ、この状態でめっ
きを行うことにより、めっき皮膜中に分散材を共析させ
る。被めっき物に分散材をあらかじめ接触させる方法と
しては、特に限定はないが、例えば、被めっき物をめっ
き液は通過するが分散材は通過し得ないメッシュで囲
み、そのメッシュ内に分散材を高濃度で存在せしめる方
法等を採用することができる。
In the present invention, the dispersant is co-deposited in the plating film by contacting the object to be plated with a dispersing material for eutectoid in the plating film and plating in this state. The method for bringing the dispersant into contact with the object to be plated in advance is not particularly limited.For example, the object to be plated is surrounded by a mesh through which the plating solution passes but the dispersant cannot pass, and the dispersant is placed in the mesh. It is possible to adopt a method of causing a high concentration to be present.

【0012】本発明の特徴として、めっき液中に流れる
電流の向きに対し略平行方向に磁力線が生ずるように、
磁場を印加しながらめっきする。被めっき物と接触する
分散材の粒子近傍では、分散材の粒子の存在により局所
的に電流の方向が変えられ磁力線と平行でない電流成分
が現れるため、電流の方向と印加された磁場の方向との
関係から、粒子を中心とする渦が生ずるようにローレン
ツ力が発生する。このローレンツ力は分散材の粒子の存
在のみならず、被めっき物表面の凹凸、あるいは、めっ
きの副反応として生ずる微細な水素の気泡よっても発生
する。そして、このローレンツ力を起因として局所的な
めっき液の攪拌が行われるため、限界電流密度が増大
し、高い電流密度でのめっきが可能となり、ひいては速
いめっき速度で分散材の粒子をめっき金属中に共析させ
ることができる。
As a feature of the present invention, the magnetic field lines are generated in a direction substantially parallel to the direction of the current flowing in the plating solution.
Plating while applying a magnetic field. In the vicinity of the particles of the dispersing material that comes into contact with the object to be plated, the direction of the current is locally changed due to the presence of the particles of the dispersing material, and a current component that is not parallel to the lines of magnetic force appears. From the relationship, Lorentz force is generated such that a vortex around the particle is generated. This Lorentz force is generated not only by the presence of the particles of the dispersing material, but also by irregularities on the surface of the object to be plated or fine hydrogen bubbles generated as a side reaction of plating. The local current of the plating solution is locally agitated due to the Lorentz force, so that the limiting current density increases, and plating at a high current density becomes possible. Can be eutectoid.

【0013】この方法によれば、被めっき物と接触して
いる分散材の状態がほぼそのままの形でめっき皮膜中に
共析するため、比重や粒子径が大きな分散材であっても
めっき皮膜中に共析させることが可能となる。また、た
とえめっき液中への分散材の添加を微量にしても、被め
っき物近傍に適量の分散材が存在すれば、めっき皮膜中
に機能を付与させるために十分な量の分散材を均一に共
析させることが可能となり、ひいては分散材の利用率を
大幅に向上させることができる。
According to this method, since the state of the dispersing material in contact with the object to be plated is eutectoid in the plating film almost as it is, even if the dispersing material has a large specific gravity or a large particle size, the dispersing material has a large particle size. It becomes possible to cause eutectoids inside. Even if the amount of the dispersant added to the plating solution is very small, if an appropriate amount of the dispersant is present in the vicinity of the object to be plated, a sufficient amount of the dispersant is required to impart a function to the plating film. Can be eutectoid, and the utilization of the dispersant can be greatly improved.

【0014】本発明の分散めっき法は、第1工程におい
て、めっき液中に、被めっき物を略水平方向に延在さ
せ、該被めっき物の上方に対極を設置し、第2工程は、
該被めっき物上に、めっき皮膜中に共析させるための分
散材をあらかじめ堆積させる方法とすることができる。
In the dispersion plating method of the present invention, in the first step, the object to be plated is extended in the plating solution in a substantially horizontal direction, and a counter electrode is provided above the object to be plated.
A method may be employed in which a dispersant for causing eutectoid in a plating film is previously deposited on the object to be plated.

【0015】こうであれば、たとえめっき液中への分散
材の添加が微量であっても、被めっき物上に分散材を高
密度で接触させることができこととなり、めっき皮膜中
に機能を発揮させるために十分な量の分散材を均一に共
析させることができるとともに、分散材の利用率も大幅
に向上させることができる。
[0015] In this case, even if the dispersant is added to the plating solution in a very small amount, the dispersant can be brought into contact with the object to be plated at a high density, and the function is added to the plating film. A sufficient amount of the dispersing agent to exert the effect can be uniformly eutectoid, and the utilization factor of the dispersing agent can be greatly improved.

【0016】また、本発明の分散めっき法は、第2工程
において、めっき液中に、めっき皮膜中に共析させるた
めの分散材を添加しておき、該めっき液を攪拌した後停
止することにより、沈降してくる該分散材を該被めっき
物上に堆積させる方法を採用することができる。こうで
あれば、短時間かつ低い労力で、比較的均一な状態で被
めっき物上に分散材を堆積することができる。
Further, in the dispersion plating method of the present invention, in the second step, a dispersant for causing eutectoid in the plating film is added to the plating solution, and the plating solution is stopped after stirring. Thereby, a method of depositing the settling dispersing material on the object to be plated can be adopted. In this case, the dispersant can be deposited on the object to be plated in a relatively uniform state in a short time and with low labor.

【0017】さらに、この場合において、第2工程は、
めっき液中に、めっき皮膜中に共析させるための分散材
を添加しておき、該めっき液を攪拌した後、攪拌を停止
すると同時に、第3工程のめっきを行う方法とすること
ができる。こうであれば、めっき時間をさらに短縮する
ことが可能となる。
Further, in this case, the second step includes:
In the plating solution, a dispersing agent for causing eutectoid in the plating film is added, and after stirring the plating solution, the stirring is stopped, and at the same time, the plating in the third step can be performed. In this case, the plating time can be further reduced.

【0018】また、本発明は、磁場の強さを時間ととも
に変化させることを採用することができる。こうであれ
ば、分散材の粒子近傍に発生するローレンツ力も時間と
共に変化するため、分散材の粒子のまわりに生ずる渦が
他の粒子を排斥する状態を変化させることができること
となり、ひいては共析率をめっき皮膜の厚さ方向でコン
トロールすることが可能となる。この方法を用いれば、
めっきの厚さ方向で傾斜構造をもった皮膜を容易に作成
することができる。
Further, the present invention can employ changing the strength of the magnetic field with time. In this case, the Lorentz force generated in the vicinity of the particles of the dispersing material also changes with time, so that the vortex generated around the particles of the dispersing material can change the state of rejecting other particles, and thus the eutectoid rate Can be controlled in the thickness direction of the plating film. With this method,
A film having an inclined structure in the thickness direction of the plating can be easily formed.

【0019】本発明における分散材は、アルミナを用い
ることができる。こうであれば、めっき皮膜の硬度を高
めることができ、耐摩耗性の高いめっき皮膜を提供する
ことができる。
As the dispersion material in the present invention, alumina can be used. In this case, the hardness of the plating film can be increased, and a plating film having high wear resistance can be provided.

【0020】また、本発明における分散材は、繊維状物
質を用いることもできる。こうであれば、繊維状物質の
近傍に発生するローレンツ力によって渦が生じ、この渦
の軸方向に繊維の長手方向が揃うことから、厚さ方向に
繊維を配向させた分散めっき皮膜を得ることができる。
Further, a fibrous substance can be used as the dispersion material in the present invention. In this case, a vortex is generated by the Lorentz force generated in the vicinity of the fibrous substance, and the longitudinal direction of the fiber is aligned with the axial direction of the vortex, so that a dispersion plating film in which the fiber is oriented in the thickness direction is obtained. Can be.

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

【0021】(実施形態1)実施形態1の分散めっき法
では、めっき液1としてワット浴(硫酸ニッケル240
g/L、塩化ニッケル45g/L、ホウ酸30g/L)
を用いる。このめっき液に平均粒子径1μmのα−アル
ミナを20g/L加えたものを分散めっき用めっき液1
とし、めっきの浴槽に入れる。このめっき浴槽の中に、
図1に示すように被めっき物2を水平方向に延在させ、
その上方にニッケル製の対極3を延在させる。エアポン
プ4を作動させることにより攪拌用エアノズル5から分
散めっき用めっき液1にエアを送り込むことによって攪
拌した後、攪拌を停止し、沈降してくるα−アルミナ粉
末を被めっき物2上に堆積させながら、磁場発生装置6
によりめっき液中に流れる電流の方向と平行な磁力線が
生ずるように4テラスの磁場を発生させつつ、外部直流
電源7により電流密度が800A/m2となるようにめ
っきを行う(図2)。
(Embodiment 1) In the dispersion plating method of Embodiment 1, a Watt bath (nickel sulfate 240
g / L, nickel chloride 45g / L, boric acid 30g / L)
Is used. A solution obtained by adding 20 g / L of α-alumina having an average particle diameter of 1 μm to this plating solution is used as a plating solution 1 for dispersion plating.
And put into plating bath. In this plating bath,
As shown in FIG. 1, the plating object 2 is extended in a horizontal direction,
A nickel counter electrode 3 is extended above it. The air pump 4 is operated to supply air from the stirring air nozzle 5 to the plating solution 1 for dispersion plating. After stirring, the stirring is stopped, and the precipitated α-alumina powder is deposited on the workpiece 2. While the magnetic field generator 6
The plating is performed by the external DC power supply 7 so that the current density becomes 800 A / m 2 while generating a magnetic field of four terraces so as to generate magnetic lines of force parallel to the direction of the current flowing in the plating solution (FIG. 2).

【0022】このようにして得られた分散めっき皮膜
は、耐摩耗性を飛躍的に向上するのに十分な量のα−ア
ルミナが均一に共析していた。
In the dispersion plating film thus obtained, a sufficient amount of α-alumina for uniformly improving the abrasion resistance was uniformly eutectoid.

【0023】これに対し、磁場の強さを2テラス未満に
した場合は、ニッケルが塊状に析出しただけで、正常な
めっき皮膜は得ることができなかった。
On the other hand, when the strength of the magnetic field was less than 2 terraces, a normal plating film could not be obtained because only nickel was deposited in a lump.

【0024】(実施形態2)実施形態2の分散めっき法
では、分散材として平均粒径5μmのα−アルミナを1
0g/L添加したワット浴を用い、印加磁場は7Tとし
た。その他の構成は実施形態1と同様である。
(Embodiment 2) In the dispersion plating method of Embodiment 2, α-alumina having an average particle size of 5 μm is used as a dispersant.
The applied magnetic field was 7 T using a Watt bath to which 0 g / L was added. Other configurations are the same as those of the first embodiment.

【0025】このようにして得られためっき皮膜は、図
3に示すように被めっき物8に対して垂直方向にα−ア
ルミナ9が並ぶ共析形態の構造となった。
As shown in FIG. 3, the plating film thus obtained has a eutectoid structure in which α-alumina 9 is arranged in a direction perpendicular to the plating object 8.

【0026】(実施形態3)実施形態3の分散めっき法
では、磁場の強さを時間とともに2テラスから7テラス
まで変化させた。その他の構成は実施形態1と同様であ
る。
Embodiment 3 In the dispersion plating method of Embodiment 3, the intensity of the magnetic field was changed from 2 terraces to 7 terraces with time. Other configurations are the same as those of the first embodiment.

【0027】このようにして得られためっき皮膜中のα
−アルミナの共析率は、めっき表面に近くなるほど共析
率が高くなり、いわゆる傾斜機能を有するめっき皮膜を
得ることができた。なお、実施形態3においては、磁場
の強さの変化の仕方を変えることにより、様々な共析形
態の分散めっき皮膜を得ることができる。
The α in the plating film thus obtained is
-As the eutectoid rate of alumina became closer to the plating surface, the eutectoid rate increased, and a plating film having a so-called gradient function could be obtained. In the third embodiment, by changing the manner of changing the strength of the magnetic field, it is possible to obtain dispersed plating films of various eutectoid forms.

【0028】(実施形態4)実施形態4の分散めっき法
では、分散材として平均直径0.2μmの炭化ケイ素ウ
イスカーを用いる。その他の構成要件は実施形態1と同
様である。
Embodiment 4 In the dispersion plating method of Embodiment 4, a silicon carbide whisker having an average diameter of 0.2 μm is used as a dispersing material. Other components are the same as in the first embodiment.

【0029】実施形態4の分散めっき法で得られためっ
き皮膜は、図4に示すように被めっき物10に対して垂
直方向に炭化ケイ素ウイスカー11が並ぶ共析形態の構
造となった。
The plating film obtained by the dispersion plating method of Embodiment 4 had a structure of a eutectoid form in which silicon carbide whiskers 11 were arranged in a direction perpendicular to the plating object 10 as shown in FIG.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態1の分散めっき法におけるめっき前の
状態を示した説明図である。
FIG. 1 is an explanatory diagram showing a state before plating in a dispersion plating method according to a first embodiment.

【図2】実施形態1の分散めっき法におけるめっき中の
状態を示した説明図である。
FIG. 2 is an explanatory view showing a state during plating in the dispersion plating method of Embodiment 1.

【図3】実施形態2の分散めっき法により得られためっ
き皮膜の断面の模式図である。
FIG. 3 is a schematic diagram of a cross section of a plating film obtained by a dispersion plating method according to a second embodiment.

【図4】実施形態4の分散めっき法により得られためっ
き皮膜の断面の模式図である。
FIG. 4 is a schematic diagram of a cross section of a plating film obtained by a dispersion plating method according to a fourth embodiment.

【符号の説明】[Explanation of symbols]

1…めっき液 2…被めっき物 3…対極 5…外部電源 DESCRIPTION OF SYMBOLS 1 ... Plating solution 2 ... Plated object 3 ... Counter electrode 5 ... External power supply

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】めっき液中に、被めっき物と、対極と、を
設置する第1工程と、 該被めっき物に、めっき皮膜中に共析させるための分散
材を接触させる第2工程と、 該被めっき物をカソードとし、該対極をアノードとなる
ように外部電源から直流電流を通ずることにより、めっ
き金属の析出とともに該分散材を共析させる第3工程と
からなる分散めっき法において、 前記めっき液中に流れる電流の向きに対し略平行方向に
磁力線が生ずるように磁場を印加しながらめっきを行う
ことを特徴とする分散めっき法。
1. A first step of installing an object to be plated and a counter electrode in a plating solution; and a second step of contacting the object to be plated with a dispersant for causing eutectoid in a plating film. And a third step of passing a direct current from an external power supply such that the object to be plated is a cathode and passing a direct current from an external power supply so that the counter electrode is an anode, thereby depositing the plating metal and eutecting the dispersion material. A dispersion plating method, wherein plating is performed while applying a magnetic field such that magnetic lines of force are generated in a direction substantially parallel to a direction of a current flowing in the plating solution.
【請求項2】第1工程は、めっき液中に、被めっき物を
略水平方向に延在させ、該被めっき物の上方に対極を設
置し、 第2工程は、該被めっき物上に、めっき皮膜中に共析さ
せるための分散材を堆積させることを特徴とする、請求
項1記載の分散めっき法。
In a first step, an object to be plated is extended in a plating solution in a substantially horizontal direction, and a counter electrode is installed above the object to be plated. 2. The dispersion plating method according to claim 1, wherein a dispersant for eutectoid deposition is deposited in the plating film.
【請求項3】第2工程は、めっき液中に、めっき皮膜中
に共析させるための分散材を添加しておき、該めっき液
を攪拌した後停止することにより、沈降してくる該分散
材を該被めっき物上に堆積さることを特徴とする、請求
項2記載の分散めっき法。
In the second step, a dispersing agent is added to the plating solution to cause eutectoid in the plating film, and the plating solution is agitated and then stopped. 3. The dispersion plating method according to claim 2, wherein a material is deposited on the object to be plated.
【請求項4】第2工程は、めっき液中に、めっき皮膜中
に共析させるための分散材を添加しておき、該めっき液
を攪拌した後、攪拌を停止すると同時に第3工程のめっ
きを行うことを特徴とする、請求項3記載の分散めっき
法。
In a second step, a dispersing agent for causing eutectoid in the plating film is added to the plating solution, and after stirring the plating solution, the stirring is stopped and at the same time, the plating in the third step is performed. The dispersion plating method according to claim 3, wherein the method is performed.
【請求項5】磁場の強さを時間とともに変化させること
を特徴とする、請求項1、2、3又は4記載の分散めっ
き法。
5. The dispersion plating method according to claim 1, wherein the intensity of the magnetic field is changed with time.
【請求項6】分散材がアルミナであることを特徴とす
る、請求項1、2、3、又は4記載の分散めっき法。
6. The dispersion plating method according to claim 1, wherein the dispersion material is alumina.
【請求項7】分散材が繊維状物質であることを特徴とす
る、請求項1、2、3、又は4記載の分散めっき法。
7. The dispersion plating method according to claim 1, wherein the dispersion material is a fibrous substance.
【請求項8】分散材が炭化ケイ素ウイスカーであること
を特徴とする、請求項1、2、3、4、又は7記載の分
散めっき法。
8. The dispersion plating method according to claim 1, wherein the dispersion material is a silicon carbide whisker.
JP2000220000A 2000-07-21 2000-07-21 Dispersion plating by electromagnetic stirring Expired - Fee Related JP3361793B2 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006051514A (en) * 2004-08-10 2006-02-23 Shinshu Univ Method for forming coating film of brazing material on copper member, and method for joining brazing sheet and copper member
DE102004038724B3 (en) * 2004-08-06 2006-04-27 Siemens Ag Process for producing an electrochemical layer and coating system suitable for this process
JP2007176036A (en) * 2005-12-28 2007-07-12 Ricoh Co Ltd Heat-insulating mold structure with high durability, and its manufacturing method
KR101142485B1 (en) 2004-12-22 2012-05-07 주식회사 포스코 System for preventing excessive plating for edge of strip
WO2014157305A1 (en) * 2013-03-29 2014-10-02 株式会社リケン Composite rigid chromium coating film, and sliding member coated with said coating film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3928799B2 (en) * 2003-09-30 2007-06-13 名古屋市 Dispersion plating method by electromagnetic stirring that enables control of distribution of dispersion in coating

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004038724B3 (en) * 2004-08-06 2006-04-27 Siemens Ag Process for producing an electrochemical layer and coating system suitable for this process
JP2006051514A (en) * 2004-08-10 2006-02-23 Shinshu Univ Method for forming coating film of brazing material on copper member, and method for joining brazing sheet and copper member
KR101142485B1 (en) 2004-12-22 2012-05-07 주식회사 포스코 System for preventing excessive plating for edge of strip
JP2007176036A (en) * 2005-12-28 2007-07-12 Ricoh Co Ltd Heat-insulating mold structure with high durability, and its manufacturing method
WO2014157305A1 (en) * 2013-03-29 2014-10-02 株式会社リケン Composite rigid chromium coating film, and sliding member coated with said coating film
US9850587B2 (en) 2013-03-29 2017-12-26 Kabushiki Kaisha Riken Hard composite chromium plating film and sliding member coated with such film

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