JP2002026421A - Method of manufacturing magnetoresistive effect deice and ferromagnetic tunnel junction device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a ferromagnetic tunnel junction without using an ion milling method, to surely connect an upper wiring electrode to the fine ferromagnetic tunnel junction, and to manufacture a ferromagnetic tunnel junction device having a high yield and excellent reproducibility at a lower cost. SOLUTION: In a method of manufacturing a ferromagnetic tunnel junction device, after a lower wiring electrode 202 is formed on a substrate 201, a spacer layer 203 and an insulating film 204 are deposited on the lower wiring electrode 202, an opening 205 is bored in the layers 203 and 204, the opening 205 bored in the spacer layer 203 is set larger than that bored in the insulating layer 204 so as to produce a gap 206 under the insulating film 204, a TMR film composed of two ferromagnetic conductive layers and a non-magnetic tunnel barrier layer interposed between them is deposited, a ferromagnetic tunnel junction 207 is formed on the lower wiring electrode 202 exposed inside the opening 205, separating from the insulating film 204, and then an upper wiring electrode 208 is formed on the top surface of the tunnel junction 207 and connected to it.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive element used for a reproducing magnetic head, a memory device, a magnetic field sensor and the like in a high density magnetic disk drive. In addition, the present invention particularly relates to a ferromagnetic tunnel junction device that configures a memory or the like utilizing the ferromagnetic tunnel magnetoresistance effect.

[0002]

2. Description of the Related Art A magnetoresistive element using a ferromagnetic thin film has been used for a magnetic head, a magnetic sensor, and the like. Recently, as an application thereof, a magnetic random access memory (a magnetic recording element on a semiconductor substrate) has been used. Hereinafter, abbreviated as MRAM)
Has been proposed. This MRAM has attracted attention as a next-generation semiconductor memory device characterized by high-speed operation, large capacity, and non-volatility.

The magnetoresistance effect is a phenomenon in which when a magnetic field is applied to a ferromagnetic material, the electric resistance changes according to the direction of magnetization of the ferromagnetic material. By utilizing this phenomenon, the direction of magnetization is used for recording information, and the information is read out according to the magnitude of the corresponding electric resistance, whereby the device can be operated as a memory device (MRAM).

As an element exhibiting the magnetoresistance effect, a ferromagnetic tunnel junction (hereinafter, referred to as M) having a sandwich structure in which one nonmagnetic insulator is inserted between two ferromagnetic metal layers.
TJ), a ferromagnetic tunnel junction device (hereinafter, abbreviated as TMR effect) using a ferromagnetic tunnel magnetoresistance effect (hereinafter, abbreviated as TMR effect) shown for a tunnel current perpendicular to the film surface.
(Abbreviated as TMR element) can obtain a magnetoresistance ratio of 20% or more (J. App1. Phys. 79, 4724).
(1996)), the possibility of application to MRAM is increasing, and attention is being paid.

When a TMR element is used in an MRAM, the size of the element becomes a so-called submicron size smaller than 1 μm, and fine processing for that purpose is required. FIG. 5 schematically shows such a fine processing method.

[0006] First, as shown in FIG.
After forming a lower wiring electrode 502 connected to the lower ferromagnetic layer of the MTJ portion of the wiring electrode on the first substrate 1, a tunnel magnetoresistive effect film 507 (hereinafter referred to as a ferromagnetic thin film and a tunnel barrier thin film constituting the MTJ portion) This laminated film is abbreviated as a TMR film). Next, as shown in FIG. 5B, a mask 509 for defining the shape is formed by photolithography or the like, and the TMR film 507 is etched to the shape to form an MTJ portion having a predetermined shape. Then, FIG.
As shown in (c), the formation of the interlayer insulating film 504 and the MTJ
After opening the connection hole 510 to the portion, the upper wiring electrode 508 is formed.
Is formed.

[0007] In such a fine processing method, the important points that affect the problems such as the variation of elements and the occurrence of defects are the formation of the MTJ portion by etching the TMR film 507 and the opening of the fine connection hole 510 therethrough. is there.

At present, ion etching is generally used for etching the TMR film. The ion milling method is a so-called physical sputtering method in which Ar accelerated with high energy is hit on a workpiece to skip the atoms to perform etching. When such an ion milling method is used, the material to be processed adheres as a residue to the side surface of the MTJ portion, the side surface of the mask material, or the inside of the processing apparatus during processing. Then, it was extremely difficult to remove this residue.

In the field of semiconductors, etching of thin films is usually performed by RIE or CDE using a halogen gas.
The chemical etching method such as the TMR method is used.
The ferromagnetic materials used for the film, such as Fe, Ni, and Co, are difficult to etch by a chemical etching method due to a low vapor pressure of a halide thereof. Therefore, an ion milling method, which is a physical sputtering method, is used. I had no choice.

When a connection hole is opened in a fine MTJ part, for example, the size of the MTJ part is 0.15 μm × 0.2
If it is set to μm, a connection hole having a side smaller than 0.15 μm will be opened.
If it is 0.15 μm, the accuracy of the alignment is ± 0,02.
It becomes very severe, 5 μm. It is very difficult to achieve this alignment accuracy with current exposure equipment.Conversely, if the alignment accuracy is loosened, the area of the connection hole becomes smaller, making it difficult to process the opening and increasing the connection resistance with the wiring electrode. Become.

[0011]

As described above, conventionally, in order to fabricate a submicron-sized fine TMR element, it is necessary to process a TMR film by an ion milling method.
In the ion milling method, there is a problem in that the material to be processed adheres to the side surface of the MTJ portion, the side surface of the mask material, or the processing apparatus as a residue during the processing. In addition, when the degree of circuit integration is increased and the element is reduced to a submicron size, there is a problem that it is difficult to form a connection hole.

The above problem is not limited to the TMR element.
The same can be said for an element using the giant magnetoresistance effect (hereinafter abbreviated as GMR effect) (hereinafter abbreviated as GMR element).

The present invention has been made to solve such a technical problem, and an object of the present invention is to use an ion milling method for processing a magnetoresistive effect portion such as TMR or GMR. Further, even in the case of a fine magnetoresistive effect portion, the connection with the upper wiring electrode can be reliably established, the yield and reproducibility are excellent, and a magnetoresistive effect element capable of manufacturing an inexpensive TMR element or GMR element can be manufactured. It is to provide a manufacturing method.

Another object of the present invention is to provide a T-type semiconductor device which can be manufactured at a low cost even if the size is reduced to a submicron size.
An object of the present invention is to provide a ferromagnetic tunnel junction device utilizing the MR effect.

[0015]

(Structure) In order to solve the above-mentioned problem, the present invention employs the following structure.

That is, according to the present invention, a magnetoresistive effect portion is provided in which a laminated structure in which a nonmagnetic layer is sandwiched between ferromagnetic layers is singly or multiply laminated between a first wiring electrode and a second wiring electrode. In the method for manufacturing an arranged magnetoresistive effect element, the first
Forming a wiring electrode, forming a spacer layer having a thickness greater than the thickness of the magnetoresistive effect portion on the first wiring electrode, and forming an insulating film on the spacer layer.
Forming an opening in the insulating film to reach the spacer layer, selectively etching away the spacer layer through the opening to expose the surface of the first wiring electrode, and forming a gap under the insulating film around the opening; And then depositing a laminated structure consisting of a ferromagnetic layer and a non-magnetic layer,
Forming the magnetoresistive effect portion on the first wiring electrode exposed in the opening separately from the insulating film, and a second wiring electrode connected to the upper surface of the magnetoresistive effect portion And a step of forming

Here, preferred embodiments of the present invention include the following.

(1) The opening formed in the insulating film is large in the upper part, small in the lower part, and has a forward tapered cross section.
Filling the opening with a wiring electrode material to form a second wiring electrode connected to the upper surface of the magnetoresistive effect portion;

(2) The opening formed in the insulating film is processed so that the cross section thereof has a forward tapered shape after the formation of the magnetoresistive effect portion, and the opening is filled with a wiring electrode material to thereby form the upper surface of the magnetoresistive effect portion. Forming a second wiring electrode connected to the second wiring electrode.

(3) The non-magnetic layer constituting the magneto-resistance effect portion is made of an insulator and functions as a tunnel barrier layer.

(4) The magnetoresistive effect portion is formed by sandwiching a nonmagnetic insulating thin film between ferromagnetic conductive thin films. When forming the magnetoresistive effect portion, the nonmagnetic insulating thin film is To be formed to extend outside the ferromagnetic conductive thin film.

According to the present invention, a first wiring electrode formed on a substrate, a spacer layer having an opening formed on the first wiring electrode, and an opening of the spacer layer formed on the spacer layer are formed on the first wiring electrode. An insulating film formed so as to partially extend inward, and a first wiring electrode positioned in the opening of the spacer layer, formed on the first wiring electrode to have substantially the same size as the opening of the insulating film;
A ferromagnetic tunnel junction device comprising: a ferromagnetic tunnel junction in which a nonmagnetic tunnel barrier layer is sandwiched between ferromagnetic conductive layers; and a second wiring electrode formed on the ferromagnetic tunnel junction. The tunnel barrier layer is provided so as to extend outside the ferromagnetic conductive layer. Preferably, the thickness of the ferromagnetic tunnel junction is thinner in a peripheral portion than in a central portion.

(Operation) According to the present invention, a spacer layer and an insulating film thicker than the thickness of the magnetoresistive effect portion are formed on the first wiring electrode, and both the spacer layer and the insulating film have a larger spacer than the insulating film. In the state where the layer has an opening with a larger diameter,
By depositing a laminated structure including a ferromagnetic layer and a nonmagnetic layer to form a magnetoresistive effect portion, the magnetoresistive effect portion can be formed at a necessary portion by a sputtering method or the like, and subsequent processing is omitted. be able to.

That is, instead of processing the magnetoresistive effect portion by etching such as ion milling, the magnetoresistive effect portion can be formed in the opening of the spacer film having the eaves of the insulating film by the sputtering method or the like. Does not remain on the side surface as a residue, and a high-quality magnetoresistive portion can be manufactured. In addition, since the opening is provided in the insulating film before the magnetoresistive effect part is manufactured, the opening of the insulating film and the magnetoresistive effect part are formed in a self-aligned manner. The connection between the effect portion and the second wiring electrode can be reliably performed.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the illustrated embodiments.

FIG. 1 is a sectional view showing a basic manufacturing process of a ferromagnetic tunnel junction device according to one embodiment of the present invention. The basic principle and configuration of the present invention will be described with reference to FIG.

First, as shown in FIG.
A lower wiring electrode (first wiring electrode) 102 is formed on 1, and a two-layer structure of a spacer layer 103 and an insulating film 104 is laminated thereon. Next, as shown in FIG. 1B, an opening 105 is formed so as to penetrate two layers of the insulating film 104 and the spacer layer 103. At this time, the spacer layer 103 is subjected to lateral etching so as to form a gap 106 below the insulating film.

Next, as shown in FIG. 1C, a TMR film 107 is formed in the opening 105 of the spacer layer 103 by, for example, a sputtering method. At this time, if the thickness of the spacer layer 103 is made larger than that of the TMR film 107, the TMR film 107 is separated from the lower wiring electrode 102 and the insulating film 104 in the opening 105 by the gap 106 below the insulating film. Is formed. TMR film 1 in opening 105
The shape of 07 is defined by the opening shape of the insulating film 104, and a fine MTJ portion can be formed without using the ion milling method.

Next, as shown in FIG. 1D, the opening 105 is filled with an upper wiring electrode material. At this time, by forming the opening 105 formed in the insulating film 104 in advance so that the upper part is large, the lower part is small, and the cross section thereof has a forward taper, the electrode material on the insulating film 104 and the opening 105 are formed.
Is connected without disconnection. Thereafter, the upper wiring electrode (second wiring electrode) 108 is processed into a predetermined shape so that the upper wiring electrode 108 can be taken out from the MTJ portion without opening a submicron connection hole on the MTJ portion. Become.
At this time, a gap is formed beside the MTJ.

As another example of the method of forming the upper wiring electrode 108, the shape may be defined by a photoresist or the like at the time of embedding, and the electrode may be formed by a lift-off method. The forward tapered opening may be formed before the upper wiring electrode material is formed, and the opening 10 is formed in the insulating film 104.
5, a method of forming a forward taper, a method of forming a vertical opening in the insulating film 104 and forming a gentle slope sidewall in the opening to form a forward tapered shape. A method of forming a vertical opening, forming an MTJ portion through the vertical opening, and then forming a sidewall in the opening can be considered.

Next, desirable characteristics of the material used in the manufacturing method of the present invention will be described. Spacer layer 10
The material used as 2 may be either conductive or insulating. When a conductive material is used, there is an advantage that the resistance of the lower wiring electrode 102 is reduced. On the other hand, when an insulating material is used, a short circuit problem does not occur even if the side etching amount is small. Spacer layer 103 and insulating film 1
What is required in combination with 04 is that the spacer layer 103 can be etched with an isotropic etchant having a sufficiently high etching rate with respect to the insulating film 104.

The spacer layer 103 may be the same as the lower wiring electrode material. However, in this case, it is preferable that the surface of the lower wiring electrode exposed by the etching has less irregularities. When the spacer layer 103 and the lower wiring electrode material are different, it is desirable that the lower wiring electrode 102 is not etched with respect to the etchant used for etching the spacer layer 103 or that the etching rate is sufficiently lower than that of the spacer layer material.

The combination of materials satisfying these conditions is
Then, for example, the insulating film 104 is made of SiO _Two, Spacer layer 10
3 and W on the outermost surface of the lower wiring electrode 102.
You could think so. Alternatively, the insulating film 104 may be made of SiN.
x, SiO in the spacer layer 103 _Two, Lower wiring electrode outermost surface
Is also conceivable.

Next, one embodiment of the present invention will be described more specifically. FIG. 2 is a sectional view showing a more specific manufacturing process of the ferromagnetic tunnel junction device according to the embodiment.
The ferromagnetic tunnel junction device according to the present embodiment is used for an MRAM and is a part of an integrated circuit formed on a semiconductor substrate. The device portion is formed on an insulating film. Are connected to each other via a plug penetrating through the insulating film.

As shown in FIG. 2A, on the substrate 201 on which the interlayer insulating film and the plug have been formed, first, Al as the lower wiring electrode material is deposited on the substrate 201 by sputtering for 200 n.
After sequentially depositing 20 nm of m and W, the shape of the wiring electrode is defined by photolithography, and the lower wiring electrode 202 is processed by RIE using CF ₄ . Subsequently, after WN is formed as a spacer layer 203 by a sputtering method with a thickness of 60 nm, an SiO ₂ film 204 is formed with a thickness of 300 nm by a thermal CVD method. Subsequently, after patterning into a predetermined shape by photolithography, the SiO ₂ film 204 is etched by RIE using CF ₄ to obtain a 0.6 μm × 0.
An opening 205 of 5 μm is formed.

Next, as shown in FIG.
After forming a 00 nm SiO ₂ film by a thermal CVD method,
Etchback is performed by RIE using CF ₄ and SiO ₂
Smooth sidewall 2 in opening 205 of film 204
The formation of 11 makes the cross section of the opening 205 a forward taper. At this time, the bottom size of the opening 205 is 0.25 μm × 0.15 μm.

[0037] Then, as shown in FIG. 2 (c), CF ₄
By etching the WN as the spacer layer 203 by the CDE method using / O ₂ , the surface of the lower electrode is exposed, and the gap 206 is formed under the SiO ₂ film 204.
To form The side etching amount at this time is about 70 n
m.

Next, as shown in FIG.
The film 207 is formed by a high vacuum sputtering method. As shown in FIG. 3, the TMR film 207 includes a Ta film 301, an Ir-Mn film 302, and a C
o-Fe film 303, A1 ₂ O ₃ film 304, Co-Fe film 305, Ni-Fe film 306, Co-Fe film 307, A
It is manufactured by laminating a ₁₂ O ₃ film 308, a Co—Fe film 309, an Ir—Mn film 310, and a Ni—Fe film 311.

Here, the Co—Fe films 303 and 305 as the ferromagnetic conductive layers and the Al ₂ O ₃ film 30 as the non-magnetic insulating layer are used.
A first ferromagnetic tunnel junction 350 from the fourth is formed, and a second ferromagnetic tunnel from the Co—Fe films 307 and 309 as the ferromagnetic conductive layers and the A1 ₂ O ₃ film 308 as the nonmagnetic insulating layer. The joint 360 is configured. The Ta film 301 functions as a buffer layer for improving the crystallinity of the upper layer, the Ir-Mn films 302 and 310 function as layers for fixing the direction of spin, and the Ni-Fe film 311 functions as a protective layer. Note that Pt-Mn may be used instead of In-Mn for the fixing layer. The protective layer is N
Ta, W, Ti or the like may be used instead of i-Fe.

The lowermost layer of the TMR film 207, Ta,
Before the film 301 is formed, the outermost surface of the lower electrode is etched by about 1 to 2 nm with Ar plasma as a pre-film formation process. Also, Al ₂ O ₃ films 304 and 308 which are barrier layers
When forming a film, Al ₂ O is formed up to the void region 206 under the SiO ₂ film 204 by an inclined sputtering method.
_{Although the three} films 304 and 308 are spread, when another metal material is formed, sputtering is performed so that metal atoms fly perpendicular to the substrate. This is to ensure insulation between the upper and lower ferromagnetic conductive layers as described later.

After the Al ₂ O ₃ films 304 and 308 are formed, they are oxidized in O plasma to improve the performance of the barrier layer. The thickness of the TMR film 207 is 50 nm, which is smaller than that of the spacer layer 203. Thereby, the lower wiring electrode 20 in the opening 205 is formed.
2 and the TMR film 207 are formed separately on the SiO ₂ film 204. That is, 0.25 μm ×
An MTJ portion of 0.15 μm will be formed.

The reasons for changing the sputtering conditions when depositing Al ₂ O ₃ as a barrier layer and other metal materials are as follows. The TMR film 207 tends to be thinner at the periphery than at the center. Al ₂ as an insulating layer in the periphery
When the O ₃ film becomes thin, the upper and lower Co—Fe films may be short-circuited. Therefore, as shown in FIG. 4, the short circuit between the upper and lower Co—Fe films can be reliably prevented by forming the Al ₂ O ₃ film so as to be spread outward as compared with other films. Incidentally, the laminated film of 401 in the figure Ta film 301, Ir-Mn film 302, Co-Fe film 303, 404 is Al ₂
O ₃ films 304 and 405 are a Co—Fe film 305 and NilF
e film 306, a laminated film of Co—Fe film 307, 408
The l ₂ O ₃ films 308 and 409 are a Co—Fe film 309 and Ir
−Mn film 310 and a Ni—Fe film 311 are stacked.

Next, as shown in FIG. 2E, an opening 205 is buried by forming a W film as an upper wiring electrode material to a thickness of 300 nm. Thereby, W on the MTJ section
And W on the SiO ₂ film 204 are connected. Subsequently, a photoresist mask having a predetermined shape is formed by photolithography, the W of the upper electrode 208 is etched by RIE, and then the TMR exposed on the SiO ₂ film 204 by ion milling using Ar. Etch the film material. Thereby, a ferromagnetic tunnel junction device is completed.

In the ferromagnetic tunnel junction device thus manufactured, since the fine MTJ portion is manufactured only by the sputtering method instead of the ion milling method, it is necessary to avoid inconvenience such as residue adhering to the side surface of the MTJ portion. Can be. In the MTJ section, as shown in FIG.
Since the nonmagnetic insulating films 404 and 408 are formed so as to protrude outside the ferromagnetic conductive films 401, 405 and 409, even if the peripheral portion is formed thinner than the central portion, the Short circuit between the upper and lower ferromagnetic conductive films (401 and 405 and 405 and 409) sandwiching the magnetic insulating film can be prevented beforehand. Further, since the opening 205 is provided in the insulating film 204 before the MTJ part is manufactured,
Since the opening 205 and the MTJ portion of the insulating film 204 are formed in a self-aligned manner, the connection between the MTJ portion and the upper wiring electrode 208 can be reliably performed even when the size of the insulating film 204 becomes submicron.

The present invention is not limited to the above embodiment. In the embodiment, the sidewall is formed before the formation of the TMR film. However, it is also possible to form the sidewall by performing the same SiO ₂ film formation / etchback after the formation of the TMR film. . In this case, the size of the connection hole is surely smaller than that of the MTJ portion, and the junction side wall is covered with the insulating film. Can be avoided.

In the embodiments, the TMR element has been described. However, the present invention can be applied to a GMR element. When applied to a GMR element, the material of the nonmagnetic layer may be Cu, Al, Pd, Pt, Rh, Ru, Ir, A
u, or a non-magnetic metal such as Ag, CuPd, CuPt,
CuAu, CuNi alloy or the like can be used. The thickness of the nonmagnetic layer is desirably 0.5 to 20 nm,
In particular, it is desirable that the thickness be 0.8 to 5 nm. Note that the alloys containing two or more elements described above are not necessarily limited to the 1: 1 composition ratio, and various other composition ratios can be adopted.

Further, the laminated structure of the spacer layer and the insulating film is 2
It may be a multilayer having more than two layers, and there is no problem even if the number of layers is appropriately increased or decreased during the production. In addition, various modifications can be made without departing from the scope of the present invention.

[0048]

As described in detail above, according to the present invention, a two-layer structure of a spacer layer and an insulating film is used to form a forward tapered insulating film opening and a gap below the insulating film, and to utilize this. By forming the magnetoresistive effect portion, it is possible to form the MTJ portion without using an ion milling method,
The connection of the wiring electrode to the portion can be formed in a self-aligned manner, and the magnetoresistive element can be manufactured with good yield, good reproducibility, and low cost.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a manufacturing process of a ferromagnetic tunnel junction device according to the present invention.

FIG. 2 is a sectional view showing a manufacturing process of the ferromagnetic tunnel junction device of the MRAM according to the embodiment of the present invention.

FIG. 3 is a sectional view showing a specific configuration example of a TMR film.

FIG. 4 is a cross-sectional view showing the upper and lower ferromagnetic conductive layers in a TMR film and the state of formation of a nonmagnetic insulating layer interposed therebetween.

FIG. 5 is a sectional view showing a manufacturing process of a conventional ferromagnetic tunnel junction device.

[Explanation of symbols]

101, 201 ... substrate 102, 202 ... lower wiring electrode (first wiring electrode) 103, 203 ... spacer layer 104, 204 ... insulating film 105, 205 ... opening 106, 206 ... void 107, 207 ... TMR antinode 108, 208 ... upper wiring electrode (second wiring electrode) 211 ... sidewall 301 ... Ta film 302, 310 ... Ir-Mn film 303,305,307,309 ... Co-Fe film 304,308,404,408 ... Al ₂ O ₃ film 306, 311 Ni—Fe film 350 First ferromagnetic tunnel junction 360 Second ferromagnetic tunnel junction 401, 405, 409 laminated film

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshiaki Saito 1st address, Komukai Toshiba-cho, Saisaki-ku, Kawasaki-shi, Kanagawa F-term in Toshiba R & D Center (reference) 5D034 BA03 BA08 BA15 DA07

Claims (5)

[Claims] A magnetoresistive unit having a laminated structure in which a non-magnetic layer is sandwiched between ferromagnetic layers in a single layer or multiple layers is disposed between a first wiring electrode and a second wiring electrode. In the method for manufacturing a resistance effect element, a step of forming a first wiring electrode on a substrate, a step of forming a spacer layer thicker than the thickness of the magnetoresistive effect portion on the first wiring electrode, Forming an insulating film thereon, forming an opening in the insulating film to reach the spacer layer, and selectively etching away the spacer layer through the opening to expose a surface of the first wiring electrode. Forming a gap under the insulating film around the opening, and then depositing the laminated structure including the ferromagnetic layer and the nonmagnetic layer on the first wiring electrode exposed in the opening. Before being separated from the insulating film A method for manufacturing a magnetoresistive element, comprising: forming a magnetoresistive effect portion; and forming a second wiring electrode connected to an upper surface of the magnetoresistive effect portion. 2. The opening formed in the insulating film has a large upper portion, a smaller lower portion, and a forward tapered cross section. The opening is filled with a wiring electrode material to form an upper surface of the magnetoresistive effect portion. 2. The method according to claim 1, wherein the second wiring electrode to be connected is formed. 3. An opening formed in the insulating film is processed so that a cross section thereof has a forward tapered shape after the formation of the magnetoresistive effect portion, and the opening is filled with a wiring electrode material to form the magnetoresistive effect. 2. The method according to claim 1, wherein the second wiring electrode connected to the upper surface of the portion is formed. 4. A magnetoresistive device according to claim 1, wherein said nonmagnetic layer constituting said magnetoresistive effect portion is made of an insulator and functions as a tunnel barrier layer. Method for manufacturing effect element. 5. A first wiring electrode formed on a substrate, a spacer layer having an opening formed on the first wiring electrode, and a spacer layer formed on the spacer layer inside the opening of the spacer layer. An insulating film formed so as to extend partially, and a non-magnetic tunnel barrier layer formed on the first wiring electrode located in the opening of the spacer layer and having substantially the same size as the opening of the insulating film. And a second wiring electrode formed on the ferromagnetic tunnel junction, wherein the tunnel barrier layer is formed from the ferromagnetic conductive layer. The ferromagnetic tunnel junction element is also provided so as to extend outward.