JP2001352053A - Solid-state image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image pickup device for reducing pixel pitch, irrespective of minimum processing size of a contact hole of a connector, and for decreasing an area of a photodetector. SOLUTION: In the solid-state image pickup device 100, a plurality of photoelectric converters 101, 101, and so on are disposed into a matrix form, and a plurality of charge transfer electrodes 111, 112, 113 and 114 are formed into a repeating pattern in the vertical direction on its upper surface. The charge transfer electrodes 111, and so on are formed at a first pitch P1 in the photodetector and formed at a second pitch P2 wider than the first pitch P1 in the connector 100B in which wirings 121, and so on for supplying a drive pulse. A pitch converter 100C, in which the charge transfer electrodes 111, and so on are formed at the first pitch P1 at a side end of the photodetector and formed at the second pitch P2 at a side end of the connector between the photodetector 100A and the connector 100B.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device, and more particularly, to a frame transfer type solid-state imaging device for supplying a driving pulse from both sides of a light receiving section.

[0002]

2. Description of the Related Art Heretofore, a frame transfer type solid-state imaging device (hereinafter referred to as a frame transfer type solid-state image pickup device) which supplies a driving pulse to a charge transfer electrode on a light receiving portion through connection portions provided on both sides of the light receiving portion and thereby transfers a signal charge. CCD type solid-state imaging devices) are known.

[0003] Conventional frame transfer type CC
As shown in FIG. 9, the D-type solid-state imaging device 10
9 (surrounded by broken lines in FIG. 9) are arranged in a matrix (3 × 3 in the illustrated example), and the charge transfer electrodes 11, 12, 13, and 14 are formed in a two-layer structure on the light receiving portion 10A. Have been. Here, an example of four-phase driving is shown, and four charge transfer electrodes 11, 12, 13, and 14 are formed in a repetitive pattern.
It is arranged on the pixel 1. The light receiving unit 10A is applied to the four charge transfer electrodes 11, 12, 13, and 14.
From four metal wirings 21, 22, 23, 24 on connecting portions 10B, 10B provided on both sides of the driving pulse φ
1, φ2, φ3, φ4 are supplied.

Here, the charge transfer electrodes 11, 12, 1
3 and 14 extend in the horizontal direction with a constant line width from the light receiving portion 10A to the connection portions 10B and 10B, and the charge transfer electrodes 11, 12,... They are arranged at a pitch P. In the figure, reference numeral 1
0D is a shielded horizontal CCD, 31 is an output amplifier,
Reference numeral 32 indicates an output terminal.

In the solid-state imaging device 10 having such a configuration, the pitch P between the charge transfer electrodes 11, 12, 13, and 14 is determined as follows. As shown in FIG. 10, at the connecting portion 10B of the CCD solid-state imaging device 10, the charge transfer electrodes 11, 12, 13, 14 and the metal wirings 21, 22, 2,
Contact holes 31, 32, 33, and 34 for making contact with 3, 3 and 24 must be formed in the protective film 30 (FIG. 10 is a cross-sectional view along XY of FIG. 22 cross section).

Therefore, the first-layer charge transfer electrodes 12, 1
The line width W1 of 4 and the line width W2 of the charge transfer electrodes 11 and 13 of the second layer are necessary for providing the contact holes 31, 32, 33 and 34 (width C2) with the minimum processing accuracy in the semiconductor manufacturing technology. Must be a value.

If the minimum processing dimension C2 of the contact hole is 2.0 μm, the line width W1 of the charge transfer electrodes 12 and 14 of the first layer is limited to the contact holes 32 and 34.
And the margin ΔW3 of the second layer charge transfer electrode 1 adjacent to the first layer charge transfer electrodes 12 and 14 is 0.5 μm.
Assuming that the overlap ΔW2 between the first and the first 13 is 0.5 μm, the overlap ΔW2 is 4.0 μm.

Further, the second-layer charge transfer electrodes 11, 13
Is 3.0 μm when the minimum processing size of the contact holes 31 and 33 is 2.0 μm and the margin between the contact holes 31 and 33 is 0.5 μm. Further, the second-layer charge transfer electrode 11, the line width W2 (3.0 μm),
3. When the overlap ΔW1 (0.5 μm) between the charge transfer electrodes 13 and the adjacent first-layer charge transfer electrodes 12 and 14 is combined,
0 μm, which is the first-layer charge transfer electrode 12,
14 width.

Here, four-phase driving pulses φ1, φ2, φ
In the CCD type solid-state imaging device 10 to which 3, φ4 is supplied,
For each pixel, four charge transfer electrodes 11,
Since pixels 12, 13, and 14 are arranged, the pixel width WG (corresponding to the pixel pitch here) shown in FIG. 9 is 4.0 μm.
× 4 = 16 μm. Assuming now that the number of pixels in the vertical direction of the CCD solid-state imaging device 10 is 1000, FIG.
As shown in FIG. 1, the vertical width d1 of the light receiving unit 10A is 16 mm.
(Including the width d2 of 16 mm), and the connecting portion 10
B and 10B both have a width d3 of about 0.1 mm.

As described above, in the CCD type solid-state imaging device 10, the pixel pitch PG in the light receiving section 10A is determined by the processing dimension (C2 in FIG. 10) of the contact holes 31,.

[0011]

By the way, in the CCD type solid-state imaging device 10, when detecting visible light, an image represented by incident light is magnified by an optical lens, and the magnified image is transmitted to the light receiving unit 10A. And detect it, so
Even if the area of the light receiving section 10A is large, a fine image can be detected. However, when an electron beam (EB) or radiation is used, there is a demand to reduce the area of the light receiving section itself because an optical lens cannot be used to enlarge the image represented by the incident EB or radiation. .

However, as described above, in the CCD solid-state imaging device 10, the pixel width WG (pixel pitch PG) of the pixel 1 of the light receiving section 10A is determined by the charge transfer electrodes 11, 12, 13, and The line widths W1, W2 are determined by the sizes (C2 in FIG. 10) of the contact holes 31, 32, 33, 34 formed in the protective film 30 as described above. You. For this reason, unless the minimum processing dimension in the semiconductor manufacturing technology is further reduced, the size of the light receiving unit 10A cannot be reduced.

The present invention has been made in view of such circumstances, and regardless of the minimum processing size of a contact hole formed in a connection portion, the pitch of the photoelectric conversion portion of the light receiving portion is reduced, so that the light receiving portion has a small pitch. It is an object to provide a solid-state imaging device capable of reducing the area.

[0014]

According to a first aspect of the present invention, a plurality of photoelectric conversion units are arranged in a matrix in a light receiving unit, and a plurality of photoelectric conversion units are arranged in a matrix on both sides of the light receiving unit. In a solid-state imaging device, a wiring for supplying a drive pulse is formed, and a plurality of charge transfer electrodes extending in a horizontal direction so as to straddle the light receiving unit and the connection unit.
The charge transfer electrode is connected to the wiring via a contact hole at the connection portion, and is formed at a first pitch in a vertical direction at the light receiving portion, and is wider than the first pitch at the connection portion. The charge transfer electrode is formed at a second pitch, and between the light receiving portion and the connection portion, the charge transfer electrode has the first pitch at a light receiving portion side end and the second pitch at a connection portion side end. And a pitch converter formed so as to satisfy the following condition. Accordingly, the pitch of the charge transfer electrodes in the light receiving section can be made smaller than the pitch in the connection section, and the area of the light receiving section can be reduced.

Further, according to a second aspect of the present invention, the charge transfer electrode has a first line width corresponding to the first pitch at a light receiving section side end of the pitch conversion section, and the connection section side end has a first line width corresponding to the first pitch. The portion is formed to have a second line width corresponding to the second pitch, and the middle portion is formed so that the line width gradually increases from the end of the light receiving portion to the end of the connection portion. Thereby, the line width of the charge transfer electrode in the pitch converter can be secured.

Further, according to a third aspect of the present invention, the first line width of the charge transfer electrode is a line width having a minimum processing size, and the second line width is a contact hole having a minimum processing size. It is a possible line width. Thus, the pitch of the light receiving section can be determined regardless of the processing size of the contact hole. Further, in the invention according to claim 4, a plurality of photoelectric conversion units are arranged in a light receiving unit in a matrix, and a wiring for supplying a drive pulse is formed in a connection unit provided on both sides of the light receiving unit. In a solid-state imaging device in which a plurality of charge transfer electrodes extending in the horizontal direction so as to straddle the connection portion, the charge transfer electrode is connected to the wiring via a contact hole at the connection portion, and A fifth line having a third line width in the light receiving portion, a fourth line width in the connecting portion, and a narrower line than the third line width between the light receiving portion side end and the connecting portion side end. It is formed with a width. Thereby, the pixel pitch in the light receiving unit can be minimized.

According to a fifth aspect of the present invention, the fifth line width of the charge transfer electrode is a line width of a minimum processing size, and the fourth line width is a contact hole of a minimum processing size in the charge transfer electrode. Is a line width that can be formed, and the third line width is determined based on the sum of the fifth line width and the fourth line width. Thereby, the pixel pitch in the light receiving unit can be minimized.

According to a sixth aspect of the present invention, in the connecting portion provided on both sides of the light receiving portion, four wires for supplying four-phase driving pulses are provided, respectively, and the charge transfer electrode is provided. Are grouped into four types of electrodes to which different driving pulses are supplied, and the four electrodes form a one-cycle electrode pattern. Thereby, the pixel pitch in the light receiving section corresponding to the electrode pattern of one cycle can be minimized.

According to a seventh aspect of the present invention, eight wirings are provided at connection portions provided on both sides of the light receiving portion to supply a four-phase drive pulse in two parts, respectively. The charge transfer electrodes are grouped into eight types of electrodes to which drive pulses are supplied from different wirings, and the eight electrodes constitute a one-cycle electrode pattern. Thus, the pixel pitch in the light receiving section can be minimized according to the electrode pattern of one cycle.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to FIGS. In the solid-state imaging device 100 according to the first embodiment, as shown in FIG. 1, a pixel (photoelectric conversion unit; in the figure, a fixed pixel width (WG in both the horizontal and vertical directions)
Are arranged in a matrix in the horizontal and vertical directions (3 × 4 in the illustrated example).
Pieces). Note that the pixel width WG substantially matches the pixel pitch PG.

On the upper surface of the pixel 101, four charge transfer electrodes 111, 11 extending in the horizontal direction are provided four by one for each pixel.
2, 113, 114 are arranged at a constant pitch P1 in the vertical direction. Here, the charge transfer electrodes 111, 11
2, 113, 114 have a two-layer structure, and the charge transfer electrodes 1
12, 114,... Are first layer electrodes, charge transfer electrodes 11
Reference numerals 1 and 113 are electrodes of the second layer (FIGS. 2 and 3).

The charge transfer electrodes 111, 112, 113,
114 is formed from the upper surface of the light receiving portion 100A to the upper surfaces of the connection portions 100B and 100B provided on both sides thereof (FIG. 1), and a protective film 130 is formed on the upper surface thereof (FIGS. 2 and 3). . The protective film 130 has a connection portion 100B
, Contact holes 131, 132, 133,
The contact holes 131 and 13 are formed.
2, 133, 134 via the charge transfer electrodes 111,
Metal wiring (aluminum) 121, 112, 113, 114
122, 123, and 124 are electrically connected.

In the CCD-type solid-state imaging device 100 having the above-described configuration, the charge transfer electrodes 111, 112, 113, and 114 are connected to the light receiving section 1 as shown in FIGS.
At 00A, they are formed at a predetermined pitch P1 in the vertical direction. On the other hand, in the connection portion 100B, as shown in FIGS. 1 and 3, the charge transfer electrodes 111, 112, 113, 11
4 is formed at a pitch (second pitch) P2 wider than the predetermined pitch P1.

A pitch conversion unit 100C is provided between the light receiving unit 100A and the connection unit 100B, and the charge transfer electrodes 111, 112, 113, and 114 are provided on the light receiving unit 100A side of the pitch conversion unit 100C. At the end portions, the first line widths W1a and W2a corresponding to the first pitch P1 are connected to the connection portions 1
The second line widths W1b and W2b corresponding to the second pitch P2 are formed at the end on the 00B side, and light is received between the end on the light receiving portion 100A side and the end on the connection portion 100B side (intermediate portion). The line width is formed so as to gradually increase from the part 100A side to the connection part 100B side. In the figure, reference numeral 100D
Reference numeral 161 indicates an output amplifier, and reference numeral 162 indicates an output terminal.

Here, the values of the first pitch P1 and the second pitch P2 will be described with reference to FIGS. CC
In the connection portion 100B of the D-type solid-state imaging device 100, as shown in FIG. 3, the charge transfer electrodes 111, 112, 113,
114 is such that contact holes 131, 132, 133 and 134 can be formed in the protective film 130 on the upper surface thereof.
The line width W1b of the charge transfer electrodes 112 and 114 of the first layer,
The line width W2b of the charge transfer electrodes 111 and 113 of the second layer is determined.

Here, the contact holes 131, 13
The minimum processing dimension when forming 2,133,134 is C2
Then, the line width W1b of the charge transfer electrodes 112 and 114 of the first layer becomes a value obtained by adding a predetermined margin ΔW3 and an overlap ΔW2 to C1 (FIG. 3). The distance between the charge transfer electrodes 112 and 114 in the first layer is determined by the line width W2b and the line width ΔW of the charge transfer electrodes 111 and 113 in the second layer.
1, ΔW1.

On the other hand, in the light receiving section 100A, as shown in FIG. 2, the charge transfer electrodes 111, 112, 113, 114
Are the minimum processing dimensions (W1a, W1a).
b) is determined. Here, the pitch P1 in the light receiving unit 100A is a value corresponding to the line widths W1a, W1b, and ΔW1 (FIG. 2). Thus, the (P1, P2) charge transfer electrodes 111, 112, 113, and 114 having different pitches between the light receiving unit 100A and the connection unit 100B are provided at the ends on the light receiving unit 100A side in the pitch conversion unit 100C shown in FIG. And a second pitch P2 at the end on the side of the connection portion 100B.

It is now assumed that the charge transfer electrodes 111, 112,
In the case where the minimum processing size of 113 and 114 is 2.0 μm, since the contact holes 131 are required in the connection portion 100B as in the related art, the pitch P2 is 4.0 μm.
m in the light receiving unit 100A, as shown in FIG.
The pitch P1 can be set to 2.5 μm. At this time, in the light receiving section 100A, the pixel pitch PG can be set to 10 μm.

Here, if 1000 × 1000 pixels are arranged in a matrix in the light receiving portion 100A of the CCD type solid-state imaging device 100, the size of the light receiving portion 100A becomes as shown in FIG. The vertical / horizontal width d11 of the pixel is 10 mm, and the width d13 of each of the connection portions 100B and 100B is 1.0 mm. Also, the width d1 of the pitch converter 100C
5 is about 4.0 mm. The light receiving unit 100A of the CCD solid-state imaging device 100 is a conventional solid-state imaging device
Is extremely smaller than the size of the light receiving unit 10A (FIG. 11).

(Second Embodiment) Next, a second embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS.
In the CCD solid-state imaging device 200 according to the second embodiment, as shown in FIG. 5, a line width W of the charge transfer electrodes 212, 213, and 214 is defined by a connecting portion 200C (enclosed by a thick broken line in the drawing).
23 are formed with the minimum processing size, and the pixel width WG is determined. Here, the pixel width WG substantially matches the pixel pitch PG.

On the other hand, the line width of the charge transfer electrodes 211, 212, 213, 214 at the connection portion 200B is the same as that of the first embodiment described above.
It is formed with a line width W22 capable of processing 32, 233, and 234. In the figure, reference numeral 200D denotes a shielded horizontal CCD, reference numeral 261 denotes an output amplifier, and reference numeral 262 denotes an output terminal.

In the formation of the charge transfer electrodes 211, 212, 213, 214 of the CCD type solid-state imaging device 200,
Four metal wirings 2 according to the number of driving pulse phases (four phases)
21, 222, 223, and 224 are formed. or,
In the light receiving section 200A, four charge transfer electrodes 211, 21
One cycle of the wiring pattern 210 at 2,213,214
A, 210A... Are formed.

In this case, three charge transfer electrodes 211, 212, and 213 are arranged outside the contact hole 231 closest to the light receiving section 200A. Therefore, CCD
In the solid-state imaging device 200, one pixel width WG corresponds to the charge transfer electrode 211 in which the contact hole 231 is formed.
Line width W22 of the charge transfer electrodes 211, 212, 213
Is the value obtained by adding the line width W23 for the three lines. Where the line width W
23 is formed with a minimum processing size.

When the light receiving unit 200A has the minimum pixel width WG (pixel pitch PG) of W22 + 3 × W23, the light receiving unit 200A has four charge transfer electrodes 21
The sum of the line widths of 1, 212, 213 and 214 is the pixel width WG
(= Pixel pitch PG), the line width of each electrode can be determined. As an example of the line width, the charge transfer electrode 2
11, 212, 213, and 214 have the same line width, which can be set to approximately 1/4 (= W21) of the pixel pitch PG.

As described above, in the light receiving section 200A, the charge transfer electrodes 211, 212, 21 with the line width W21.
3,214 are formed, and the pixel width WG (= pixel pitch PG)
Can be minimized. If the line width W22 required for the contact holes 231, 232,... Is 4.0 μm, and if the line width W23 is 2.0 μm, which is the minimum processing dimension, the pixel width WG (pixel pitch PG) is 10. As shown in FIG. 6, the overall size of the solid-state imaging device can be 10 mm for the vertical / width d21 of the light receiving unit 200A, and 1.0 mm for the width d23 of the connecting units 200B and 200B. The light receiving unit 200A can be extremely small in comparison with the size of the solid-state imaging device 10 (FIG. 11).

(Third Embodiment) Next, a third embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS.
As shown in FIG. 7, the CCD solid-state imaging device 300 according to the third embodiment includes charge transfer electrodes 311 and 31 at a connecting portion 300C (surrounded by a thick broken line in the figure) shown on the right side in the figure.
Line width W of 2,313,314,315,316,317
33 is formed with the minimum processing size, and the connecting portion 3 shown on the left side
At 00C, the charge transfer electrodes 312, 313, 314, 31
The line width W33 of 5,316,317,318 is formed with the minimum processing size.
G (here, twice the pixel pitch PG) is determined.

On the other hand, the charge transfer electrodes 311, 312, 313, 314, 315, 316, 3 at the connection portion 300 B
17 and 318 are the same as in the first embodiment described above.
Contact holes 331, 332, 333, 334, 3
35, 336, 337, and 338 are formed with the minimum line width W32 that can be processed. In the figure, reference numeral 300D denotes a light-shielded horizontal CCD, reference numeral 361 denotes an output amplifier, and reference numeral 3 denotes an output amplifier.
Reference numeral 62 denotes an output terminal.

In the CCD solid-state imaging device 300, eight charge transfer electrodes 311, 312, 313, 314, 315, which are doubled according to the number of drive pulse phases (four phases).
316, 317, 318 1-cycle wiring pattern 3
10A, 310A... Are formed. In this case, at least seven charge transfer electrodes 311, 312, and 3 are provided outside the contact hole closest to the light receiving unit 300 </ b> A (for example, the contact hole 338 in the right connection unit 300 </ b> C).
13, 314, 315, 316, 317 are arranged.
Therefore, in the CCD solid-state imaging device 300, two pixel pitches (2 × PG) are set to one contact hole 338.
And the seven charge transfer electrodes 311 and 31
Line width W of 2,313,314,315,316,317
33 is added.

At this time, since the light receiving portion 300A has the minimum pixel pitch PG (= W32 + 7 × W33), the charge transfer electrodes 311, 312, 313 in the light receiving portion 300A.
The line width of 314, 315, 316, 317, 318 is 8
Charge transfer electrodes 311, 312, 313, 314,
315, 316, and 317 can be distributed so that the sum of the pixel pitches PG substantially matches the pixel pitch PG.

As an example of the line width in the light receiving section 300A,
It is conceivable that the line width of only the first charge transfer electrode 311 and the fifth charge transfer electrode 315 is twice as large as the other line widths. As described above, in the light receiving unit 300A, the pixel width 2 × WG (two pixel pitch) of two pixels is reduced to the line width W33 that is the minimum processing size and the minimum line width W32 that can form the contact hole. The pixel pitch 2 × PG for these two pixels can be minimized.

It is now assumed that contact holes 331 and 33
If the line width W32 required for 2, 2,... Is 4.0 μm and the line width W33 is the minimum processing size of 2.0 μm, the pixel pitch of 2 × 2 × PG is 18.0 μm (9.
0 μm), and the overall size of the solid-state imaging device is as shown in FIG.
As shown in FIG. 11, the width d31 of the light receiving unit 300A can be 9 mm, and the width d33 of the connection units 200B and 200B can be 1.0 mm, which is smaller than the size of the solid-state imaging device 10 using the conventional solid-state imaging device (FIG. 11). The light receiving unit 300A can be made extremely small.

Note that it is also possible to replace the connecting portion 100B of the first embodiment with the connecting portion 200B of the second embodiment. Similarly, the connection unit 100 of the first embodiment
B can be replaced with the connection part 300B of the third embodiment.

[0043]

According to the first aspect of the present invention described above,
The charge transfer electrode formed from the upper surface of the light receiving portion to the upper surface of the connecting portion is formed at a first pitch in the light receiving portion and at a second pitch wider than the first pitch in the connecting portion. Since the charge transfer electrodes are formed so as to have a second pitch from the first pitch by a pitch conversion section provided between the connection section and the connection section, the pitch of the charge transfer electrodes in the light receiving section is reduced. By making the pitch smaller than the pitch at the connection portion, the area of the light receiving portion can be reduced. Thus, the size of the entire solid-state imaging device can be reduced. Further, since the light receiving portion can be made smaller, it becomes possible to detect an image represented by an electron beam (EB) or radiation.

According to a second aspect of the present invention, in the pitch conversion section, the charge transfer electrode is formed from a first line width corresponding to a first pitch to a second line width corresponding to a second pitch. Since the width is formed, the line width of the charge transfer electrode in the pitch converter can be secured, and the signal can be efficiently propagated. According to the third aspect of the present invention, the first line width of the charge transfer electrode is formed to a line width having a minimum processing size, and the second line width is formed to a line width capable of forming a contact hole having a minimum processing size. Therefore, the pitch of the light receiving section can be determined regardless of the processing size of the contact hole.

According to the fourth aspect of the present invention, a plurality of photoelectric conversion units are arranged in a matrix in the light receiving unit, and a wiring for supplying a drive pulse to the connection units provided on both sides of the light receiving unit is formed. In a solid-state imaging device in which a plurality of charge transfer electrodes extending in a horizontal direction so as to straddle the light receiving unit and the connection unit, the charge transfer electrode is connected to the wiring via a contact hole in the connection unit. At the same time as the connection, the light receiving section has a third line width, the connection section has a fourth line width, and the end on the light receiving section side and the end on the connection section side have a larger line width than the fourth line width. Since it is formed with the narrow fifth line width, it is possible to minimize the pixel pitch in the light receiving section.

According to a fifth aspect of the present invention, the fifth aspect of the charge transfer electrode is
Is the line width of the minimum processing dimension, the fourth line width is the line width at which the contact hole of the minimum processing dimension can be formed in the charge transfer electrode, and the third line width therebetween is the fifth line width. Since the pixel pitch is determined based on the sum of the width and the fourth line width, the pixel pitch in the light receiving unit can be minimized. According to the sixth and seventh aspects of the present invention, the pitch of the electrode pattern in one cycle of the charge transfer electrode can be minimized, and accordingly, the pixel pitch in the light receiving section can be minimized. .

[Brief description of the drawings]

FIG. 1 is a plan view showing a wiring pattern of a charge transfer electrode of a CCD solid-state imaging device 100 according to a first embodiment of the present invention.

FIG. 2 is a connection section 100B of the CCD solid-state imaging device 100;
FIG. 4 is a cross-sectional view for explaining the pitch of the charge transfer electrodes in FIG.

FIG. 3 is a light receiving section 100A of the CCD solid-state imaging device 100;
FIG. 4 is a cross-sectional view for explaining the pitch of the charge transfer electrodes in FIG.

FIG. 4 is a CCD solid-state imaging device 10 according to the first embodiment;
It is explanatory drawing which shows the dimension of the external shape of 0.

FIG. 5 is a plan view showing a wiring pattern of a charge transfer electrode of a CCD solid-state imaging device 200 according to a second embodiment of the present invention.

FIG. 6 is a CCD solid-state imaging device 20 according to a second embodiment;
It is explanatory drawing which shows the dimension of the external shape of 0.

FIG. 7 is a plan view showing a wiring pattern of a charge transfer electrode of a CCD solid-state imaging device 300 according to a third embodiment of the present invention.

FIG. 8 is a CCD solid-state imaging device 30 according to a third embodiment;
It is explanatory drawing which shows the dimension of the external shape of 0.

FIG. 9 is a plan view showing a wiring pattern of a charge transfer electrode of the conventional CCD solid-state imaging device 10.

FIG. 10 shows a connection section 1 of a conventional CCD solid-state imaging device 10.
FIG. 9 is a cross-sectional view for explaining a pitch of the charge transfer electrodes at 0B.

FIG. 11 is an explanatory diagram showing dimensions of an outer shape of a conventional CCD solid-state imaging device 10.

[Explanation of symbols]

 100, 200, 300 CCD type solid-state imaging device 100A, 200A, 300A Light receiving unit 100B, 200B, 300B Connection unit 100C Pitch conversion unit 200C, 300C Connection unit 111, 112, 113, 114 Electrode for charge transfer 130 Protective film 131, 132 , 133,134 Contact hole 151,152,153,154 Metal wiring

Claims (7)

[Claims] 1. A plurality of photoelectric conversion units are arranged in a matrix in a light receiving unit. Wiring for supplying a drive pulse is formed in connection units provided on both sides of the light reception unit. In the solid-state imaging device in which a plurality of charge transfer electrodes extending in the horizontal direction so as to straddle the charge transfer electrode, the charge transfer electrode is connected to the wiring via a contact hole at the connection portion, and the light receiving portion is A first pitch in the vertical direction, a second pitch wider than the first pitch at the connection portion, and the charge transfer electrode between the light receiving portion and the connection portion; A solid-state imaging device, comprising: a pitch converter formed so as to have the first pitch at a portion side end and the second pitch at a connection portion side end. 2. The charge transfer electrode has a first line width corresponding to the first pitch at a light-receiving-side end of the pitch converter, and has the second pitch at a connection-side end. 2. A second line width corresponding to the second line width, and a line width is gradually increased from an end of the light receiving portion to an end of the connection portion at an intermediate portion thereof. Solid-state imaging device. 3. The charge transfer electrode according to claim 1, wherein the first line width is a line width having a minimum processing size, and the second line width is a line width capable of forming a contact hole having a minimum processing size. The solid-state imaging device according to claim 1 or 2, wherein: 4. A plurality of photoelectric conversion units are arranged in a matrix in the light receiving unit, and a wiring for supplying a drive pulse is formed in a connecting unit provided on both sides of the light receiving unit, and the light receiving unit and the connecting unit are connected to each other. In the solid-state imaging device in which a plurality of charge transfer electrodes extending in the horizontal direction so as to straddle the charge transfer electrode, the charge transfer electrode is connected to the wiring via a contact hole at the connection portion, and the light receiving portion is A third line width, a fourth line width at the connection portion, and a fifth line width narrower than the third line width between the light receiving portion side end and the connection portion side end. A solid-state imaging device characterized in that: 5. The fifth line width of the charge transfer electrode is a line width having a minimum processing size, and the fourth line width is capable of forming a contact hole having a minimum processing size in the charge transfer electrode. The third line width is determined based on a sum of the fifth line width and the fourth line width.
3. The solid-state imaging device according to item 1. 6. A connection portion provided on both sides of the light receiving portion is provided with four wirings for supplying four-phase driving pulses, respectively, and the charge transfer electrodes are provided with different driving pulses. 6. The solid-state imaging device according to claim 4, wherein the electrodes are grouped into four types of electrodes to which the electrodes are supplied, and the four electrodes form an electrode pattern of one cycle. 7. 7. A connection portion provided on both sides of the light receiving portion is provided with eight wirings for respectively supplying a four-phase drive pulse in two parts, and the charge transfer electrode is 6. The electrode pattern according to claim 4, wherein the electrodes are grouped into eight types of electrodes to which drive pulses are supplied from different wirings, and the eight electrodes form an electrode pattern of one cycle. Solid-state imaging device.