JP2001345508A - Semiconductor light-emitting device and semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the high-speed responsiveness and light reception efficiency of a light-emitting device. SOLUTION: A silicon single-crystal substrate 5, a silicon oxide film layer 4, and an N-type silicon single-crystal substrate 1 are provided. In the silicon single-crystal substrate 5, a surface that is inclined at approximately 10 deg. in the [011] direction from the 100} surface is set to a main surface. The silicon oxide film layer 4 is an insulating layer, that is laminated at the upper part of the silicon single-crystal substrate 5. In the N-type silicon single-crystal substrate 1, the 100} surface that is laminated at the upper part of the silicon oxide film layer 4 is set to the main surface. On the bottom surface of a recessed part reaching the silicon single crystal substrate 5, a semiconductor laser element 10 is arranged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor light emitting device and a semiconductor substrate used for an optical disk device or the like.

[0002]

2. Description of the Related Art At present, compact disks (CDs) and digital versatile disks (DVs) are widely used.
An optical pickup mounted on an optical disk device such as D) requires a semiconductor laser element as a light source and a light receiving element for receiving reflected light from the optical disk and detecting a servo signal and a reproduction signal. In recent years, for the purpose of simplifying the assembly process of the optical pickup and reducing the size of the optical pickup and the optical disk device, a semiconductor light emitting device in which a semiconductor laser element as a light source, a light receiving element as a detection unit, and a signal operation circuit are integrated. Many have been proposed. One example is shown in FIGS. Such a configuration is described in, for example, Japanese Patent Publication No. 6-44657. Hereinafter, this configuration will be outlined. FIG. 6 is a plan view,
FIG. 7 is a sectional view taken along line EE in FIG.

In the drawings, reference numeral 101 denotes a semiconductor substrate, 10
Reference numeral 2 denotes an inclined reflecting surface which is formed substantially at the center of the semiconductor substrate 101. The inclined reflecting surface is formed by anisotropic etching based on an appropriate selection of a crystal direction, and is substantially formed with respect to the surface of the semiconductor substrate 101. It has a 45 ° tilt angle. Reference numeral 103 denotes a laser element fixing surface connected to the lower end portion of the reflection surface 102 via the V-shaped groove 104, and extends in a direction away from the reflection surface 102 in parallel with the surface of the semiconductor substrate 101.
Reference numeral 105 denotes a solder layer formed in a region on the reflection surface 102 side of the laser element fixing surface 103, and a semiconductor laser element 106 is bonded on the solder layer 105. Reference numeral 107 denotes an active layer of the semiconductor laser device 106. The semiconductor laser element 106 is bonded in such a manner that its laser beam emitting end face 108 faces the reflection surface 102 side. A laser light for receiving the monitoring laser beam is provided on the rear side of the semiconductor laser device bonding portion of the laser device fixing surface 103 (that is, on the monitoring laser beam emitting end surface 109 side).
A PC photodiode element 110 is formed.
Reference numeral 111 denotes a servo four-divided photodetector, which includes four photodiode elements 112a, 112b, 112c, and 11
2d. These four photodiode elements 112
a, 112b, 112c, 112d are formed around the reflective surface 102.

[0004]

However, in the above-mentioned conventional semiconductor light emitting device, the high speed response of the optical disk device is poor due to the parasitic capacitance generated between the servo four-divided photodetector 111 and the semiconductor substrate 101. Read-only CDs (CD-ROs), which are increasing in demand from the market
M) or high-speed playback of a read-only DVD (DVD-ROM).

A 780 nm band wavelength is used for CD-ROM reproduction, and a 650 nm band is used for DVD-ROM reproduction.
The band wavelength is used, but when these lights are received by the same light receiving element, the light receiving elements cannot efficiently receive both lights because the penetration lengths into the light receiving element are different.

In view of the above, the present invention solves the above-mentioned conventional problems and insulates a silicon single crystal layer suitable for disposing a light emitting element from a silicon single crystal layer for forming a signal operation circuit and a light receiving element. It is an object of the present invention to provide a semiconductor light emitting device which is excellent in high-speed response and light receiving sensitivity and is suitable for integration of light receiving and emitting elements by using a semiconductor substrate laminated via layers.

[0007]

According to the present invention, there is provided a semiconductor light emitting device, comprising: a substrate; an insulating layer formed on the substrate; and a semiconductor layer formed on the insulating layer. And a semiconductor light emitting element is mounted on the substrate, and an electronic element is formed on the semiconductor layer.

With this configuration, since the insulating layer is provided between the substrate and the semiconductor layer, the influence of the parasitic capacitance generated between the substrate and the electronic element is reduced, and the high-speed response of the optical disk device is remarkably improved. I do.

According to the semiconductor light emitting device of the present invention, a concave portion is formed in a part of the substrate, the semiconductor light emitting element is mounted on the concave portion, and light from the semiconductor light emitting element is placed on a side surface of the concave portion. Since the reflecting mirror is formed, the semiconductor light emitting element can be integrated and arranged on the substrate, and the semiconductor light emitting device can be downsized.

[0010] In the semiconductor light emitting device of the present invention, the light emitted from the semiconductor light emitting element can be obtained by setting the angle between one side surface of the concave portion and the bottom surface of the concave portion to be not less than 40 ° and not more than 50 °. In a direction substantially perpendicular to the substrate.

In the semiconductor light emitting device according to the present invention, the substrate has a principal surface whose surface is inclined in the [011] direction from the {100} plane. Can be a 45 ° mirror.

According to the semiconductor light emitting device of the present invention, the inclination angle of the inclined plane with respect to the {100} plane is 5
When the angle is not less than 15 ° and not more than 15 °, one side surface of the concave portion is defined as a {111} surface, and the side surface is 40 ° with respect to the end surface of the semiconductor light emitting element.
The mirror may have a tilt of not less than 50 ° and not more than 50 °.

According to the semiconductor light emitting device of the present invention, the wavelength of the light emitted from the light emitting element in a vacuum is λ, the thickness of the insulating layer is D, and the refractive index of the insulating layer is N. When almost

[0014]

(Equation 4)

(Where m is an integer).

According to this configuration, since a reflection mirror is formed due to a difference in refractive index between the substrate, the insulating layer and the semiconductor layer, light entering the substrate is reflected to the semiconductor layer on which the electronic element is formed. And the amount of light received by the electronic element increases.

According to the semiconductor light emitting device of the present invention, the wavelength of the light emitted from the light emitting element in a vacuum is λ, the thickness of the insulating layer is D, the refractive index of the insulating layer is N,
When an angle between a traveling direction in the insulating layer and a laminating direction of the insulating layer is θ,

[0018]

(Equation 5)

(Where m is an integer).

According to this configuration, since a reflection mirror is formed due to a difference in refractive index between the substrate, the insulating layer, and the semiconductor layer, light entering the substrate is directed toward the semiconductor layer on which the electronic element is formed. It can be reflected, increasing the amount of light received by the electronic element.

According to the semiconductor light emitting device of the present invention, with the above structure, the reflectance of light emitted from the light emitting element at the insulating layer is 30% or more, so that the electronic element is formed more than in the conventional case. More light can be reflected toward the semiconductor layer.

A semiconductor substrate according to the present invention includes a substrate, an insulating layer formed on the substrate, and a semiconductor layer formed on the insulating layer. Λ, the thickness of the insulating layer is D, the refractive index of the insulating layer is N, and the angle between the traveling direction in the insulating layer and the laminating direction of the insulating layer is θ,

[0023]

(Equation 6)

(Where m is an integer).

With this configuration, a difference in the refractive index difference between the substrate, the insulating layer, and the semiconductor layer occurs, so that the insulating layer can be used as a reflection mirror.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) A semiconductor substrate according to Embodiment 1 of the present invention will be described with reference to FIGS. FIG. 1 is a sectional view of a semiconductor light emitting device according to Embodiment 1 of the present invention. This semiconductor light emitting device is roughly composed of three layers. That is, the (100) plane or a plane equivalent to the plane ((001) plane and (010) plane, hereinafter appropriately selected one of planes equivalent to the (100) plane, including the (100) plane From the {100} plane) to <0
11> Equivalent direction (<011>, <101>, <110
A silicon single crystal substrate 5 whose main surface is a plane inclined about 10 ° in the [011] direction, and an insulating layer laminated thereon. Silicon oxide film layer 4 and silicon oxide film layer 4
And an N-type silicon single crystal substrate 1 having a {100} plane as a main surface laminated thereon.

A recess reaching the silicon single crystal substrate 5 is formed in the semiconductor light emitting device by anisotropic etching using a potassium hydroxide solution, and a semiconductor laser is formed on the bottom surface of the recess located on the silicon single crystal substrate 5. Element 10
Is arranged. Here, since the silicon single crystal substrate 5 has a principal surface inclined by about 10 ° in the [011] equivalent direction from the {100} plane, the silicon anisotropic etching is performed by the anisotropic etching.
A (111) equivalent plane, ie, a {111} plane, which forms an angle of about 45 ° with the bottom surface of the concave portion appears on one side surface of the concave portion. Since the {111} plane functions as the reflection mirror 11, the beam emitted from the semiconductor laser device 10 can be easily extracted upward through the reflection mirror 11.

Next, a light-receiving element portion 17 and a transistor portion 18 separated by a P-type silicon isolation region 12 are formed on an N-type silicon single crystal substrate 1 located on a silicon oxide film layer 4 as an insulating layer. ing. The light receiving element 17 includes an electrode 8, a P-type silicon diffusion region 9, an N-type silicon contact region 7, an N-type silicon single crystal substrate 1 (functioning as an N-type silicon single crystal layer), and an N-type silicon buried region 2. The light incident on the light receiving element portion 17 is mainly absorbed by a depletion layer (omitted in the drawing) generated between the P-type silicon diffusion region 9 and the N-type silicon single crystal substrate 1 and passes through the electrode 8 as a photocurrent. Is output. On the other hand, transistor section 1
8 denotes an N-type silicon emitter region 13, a P-type silicon base region 14, and an N-type silicon collector contact region 1.
5 and an N-type silicon single crystal substrate 1 and an N-type silicon buried region 2. In this configuration, since the collector portion of transistor portion 18 is electrically insulated from silicon single crystal substrate 5 by silicon oxide film layer 4, a parasitic capacitance is generated between the collector portion and silicon single crystal substrate 5. Therefore, the high-speed response of the transistor can be significantly improved.

As described above, the silicon single crystal substrate 5, which is the first silicon single crystal layer suitable for disposing the light emitting element, and the second semiconductor single crystal layer for forming the light receiving element and the transistor. A certain N-type silicon single crystal substrate 1 is
By using a semiconductor substrate stacked with the silicon oxide film layer 4 as an insulating layer interposed therebetween, it is possible to realize a semiconductor light emitting device which is excellent in high-speed response and suitable for integration of light emitting and receiving elements. Further, since the silicon oxide film layer 4 has a different refractive index from the silicon single crystal substrate 5 and the silicon single crystal substrate 1 with respect to the semiconductor substrate laminated via the silicon oxide film layer 4,
The silicon oxide film layer 4 can be used as a mirror,
Light can be efficiently guided to the light receiving element unit 17.

The reflection efficiency can be improved by coating the reflection mirror 11 with a metal such as gold. In this case, since the output power of the semiconductor laser device 10 can be significantly suppressed, a semiconductor substrate suitable for integrating low power consumption light emitting and receiving elements can be realized. Further, SiO ₂ / SiN is used as a coating material.
If a dielectric multilayer film such as that described above is used, it is possible to design a mirror surface having the highest reflection efficiency with respect to the oscillation wavelength of the semiconductor laser device 10 by adjusting the thickness and the refractive index of the multilayer film.

As a method of manufacturing the semiconductor substrate 16, for example, the methods shown in FIGS. First, a silicon single crystal substrate 5 having a {100} equivalent surface as a main surface is prepared (FIG. 2A), and the surface is oxidized to form a silicon oxide film layer 4 (FIG. 2B). Next, the N-type silicon single crystal substrate 1 is attached to the silicon single crystal substrate 5 via the silicon oxide film layer 4 (FIG. 2C). Then, the N-type silicon single crystal substrate 1 is ground to a thickness suitable for forming a light receiving element and a transistor (FIG. 2D). Here, Table 1 shows the wavelength dependence of the absorption coefficient and penetration length of a silicon single crystal (intrinsic).

[0033]

[Table 1]

For example, in order to receive a wavelength in the 650 nm band used for DVD-ROM reproduction, it is desirable that the remaining thickness of the N-type silicon single crystal substrate 1 be at least 3.2 μm or more.

The process for forming the light receiving element section 17 includes:
For example, those shown in FIGS. 3A to 3D can be considered. First, an N-type silicon buried region 2 and an N-type silicon contact region 7 are formed on an N-type silicon single crystal substrate 1 (FIG. 3A), and then a P-type silicon isolation region 12 is formed (FIG. 3B). ), A P-type silicon diffusion region 9 is formed (FIG. 3C). Finally, after the surface is protected by the protective layer 6, a P-type electrode / N-type electrode 8 is formed (FIG. 3).
(D)). The case where the transistor section 18 is formed is almost the same as the case where the light receiving element section 17 is formed. Further, after forming the light receiving element portion 17 and the transistor portion 18 as described above, a concave portion is formed by anisotropic etching, and the electrode 8 is formed on the bottom surface of the concave portion.
By arranging the semiconductor laser element 10 through the semiconductor light emitting device, the semiconductor light emitting device shown in FIG. 1 can be realized.

In this embodiment, the silicon single crystal substrate 1 having the {100} plane as the main surface is used.
A silicon single crystal substrate having a 1｝ plane as a main surface may be used.

In addition to the above-described manufacturing method, $ 10
The semiconductor substrate 16 is manufactured by implanting oxygen ions into the silicon single crystal substrate 5 inclined about 10 ° in the [011] direction from the 0 ° plane to form the silicon oxide film layer 4 in the silicon single crystal substrate 5. You may. In this case, a step of bonding two substrates and a step of removing a part of one substrate after bonding can be omitted. Further, the N-type silicon single crystal substrate 1 is not required.

In particular, a silicon single crystal substrate 5 having a {100} equivalent plane as a main surface is placed on a silicon single crystal substrate 1 provided with an off angle with respect to a {100} plane to obtain a 45 ° mirror. It is good to stick. In this case, the process conditions for the silicon single crystal substrate 5, for example, the conditions such as ion implantation, can be matched with the process conditions for the silicon substrate having a {100} equivalent surface.

In the present embodiment, silicon having a (111) plane as a main surface may be used as the silicon isolation region 12.

In this embodiment, the light receiving element 17 and the transistor 18 are each constituted by a single element. However, a plurality of light receiving elements and transistors may be integrated. It is also possible to integrate a plurality of elements such as resistors and capacitors as passive elements by using the current process technology. In this way, if the entire signal operation circuit is integrated on the semiconductor substrate 16, it is not necessary to separately provide an external signal operation circuit, and the cost of the optical disk device can be reduced. Also,
The reduction in the length of the wiring between the light receiving element and the external circuit significantly reduces the influence of noise from the optical disk drive incorporated in the optical disk device, so that an optical disk device with very good reproduction characteristics can be obtained. There is also an effect.

Further, only the conductivity type of each substrate, each layer and each region is shown here, and the carrier concentration or doping density of each substrate, each layer and each region is not specified. It goes without saying that the 18 is designed to function optimally. Further, although an NPN-type bipolar transistor has been described as an example of a transistor in the transistor section 18, a PNP-type bipolar transistor may of course be used. Further, there is no problem even if a MOS transistor is used. In addition, any conductivity type may be used for the substrate, layer, and region that do not show the conductivity type.

Light receiving elements and transistors that do not require high-speed response may be formed on the silicon single crystal substrate 5. As an example, a light receiving element and a transistor circuit for controlling the output power by receiving the after light of the semiconductor laser element 10 can be considered. As a method for forming such a light receiving element and a transistor circuit, for example, there is a method in which a semiconductor substrate 16 is formed in advance on the silicon single crystal substrate 5 and then the steps shown in FIGS.

Embodiment 2 Hereinafter, Embodiment 2 will be described with reference to FIGS. The configuration of the semiconductor substrate in this embodiment is basically the same as the configuration of the semiconductor substrate 16 shown in the first embodiment. Therefore, the configuration of the semiconductor substrate is replaced with the semiconductor substrate 16 shown in FIG.

The difference from the present embodiment is that the thickness of the silicon oxide film layer 4 is optimized. Hereinafter, the present embodiment will be described focusing on this point.

FIG. 4 is an enlarged view of the vicinity of the silicon oxide film layer 4 of the semiconductor substrate 16. Here, since the silicon single crystal substrate 5, the silicon oxide film layer 4, and the N-type silicon single crystal substrate 1 have different refractive indexes, a multilayer reflection mirror is formed. That is, as shown in FIG. 4, light incident on the silicon oxide film layer 4 from the N-type silicon single crystal substrate 1 repeats multiple reflection. Here, the refractive index of the N-type silicon single crystal substrate 1 and the silicon single crystal substrate 5 is n _1, and the refractive index of the silicon oxide film layer 4 is n ₂ . The thickness of the silicon oxide film layer 4 is D, the incident angle of light to the silicon oxide film layer 4 is θ, and the wavelength of the incident light in vacuum is λ. At this time, if the phase difference between adjacent optical paths of the reflected light (for example, optical paths L1 and L2) is δ,

[0046]

(Equation 7)

Using this, the reflectance R of the multilayer mirror is represented by the following equation.

[0048]

(Equation 8)

[0049]

(Equation 9)

In FIG. 4, n ₁ is the refractive index of n-type silicon single crystal substrate 1 and silicon single crystal substrate 5, n
Reference numeral ₂ denotes the refractive index of the silicon oxide film layer 4, and the dashed line indicates the direction perpendicular to the reflection surface.

FIG. 5 shows an example of the reflection characteristics of the multilayer film reflection mirror (calculation is performed for a case where θ is fixed to 0 ° and the silicon oxide film thickness D is changed, and n ₁ = 3.45 and n ₂ = 1.
46). In FIG. 5, curves A, B, and C represent graphs of reflection characteristics with respect to wavelengths of 780 nm, 650 nm, and 400 nm, respectively. Here, when the semiconductor substrate 16 of this embodiment is incorporated in an optical pickup utilizing light in the 780 nm band, such as a CD-ROM, the thickness D of the silicon oxide film layer 4 is set to around 130 nm. Then, nearly 50% of the light transmitted through the light receiving element and incident on the silicon single crystal substrate 5 is reflected by the multilayer reflection mirror, and can be incident again on the light receiving element. The light receiving sensitivity is dramatically improved.

As described above, the silicon single crystal substrate 5 which is a first silicon single crystal layer suitable for disposing a light emitting element, and the N type N type which is a second semiconductor single crystal layer for forming a light receiving element and a transistor. A semiconductor substrate 1 in which a silicon single crystal substrate 1 is laminated via a silicon oxide film layer 4 which is an insulating layer
The use of 6 makes it possible to realize a semiconductor substrate suitable for integration of light receiving and emitting elements having not only excellent high-speed response but also extremely high light receiving sensitivity.

An optical pickup using a 650 nm band such as a DVD-ROM or a next-generation HD-DVD etc.
When the semiconductor substrate of this embodiment is incorporated into an optical pickup using the 00 nm band, the thickness of the silicon oxide film layer 4 may be determined by a similar design. CD-R
For an optical pickup compatible with multiple wavelengths such as reproducing / recording OM and DVD-ROM simultaneously, the reflectivity of the multilayer reflection mirror should be at least 30% or more for light of either wavelength. The thickness of the silicon oxide film layer 4 may be determined.

In the present embodiment, the case where the refractive index of the N-type silicon single crystal substrate 1 and that of the silicon single crystal substrate 5 are the same is shown. . In addition, when light to be received is obliquely incident on the light receiving element, it is needless to say that the design is performed in consideration of the effect. Further, since the reflection characteristic of the multilayer mirror is periodically changed with respect to the silicon oxide film thickness D, the silicon oxide film thickness D for obtaining a desired reflectance is not one (FIG. 5 shows calculation only up to 200 nm). However, even at around 400 nm, the reflectivity for 780 nm light is close to 50%.)

Further, a silicon nitride film may be used instead of the silicon oxide film layer 4. Further, a silicon oxide film and a silicon nitride film may be alternately formed as a multilayer film.
Further, a silicon film and a silicon oxide film or a silicon film and a silicon nitride film may be alternately formed as a multilayer film.

Further, instead of the silicon oxide film layer 4, a single layer film or a multilayer film of aluminum oxide, titanium oxide or the like may be used.

[0057]

As described above, the semiconductor substrate of the present invention comprises a first silicon single crystal layer whose main surface is a plane inclined in the [011] direction from a {100} plane, and a second semiconductor single crystal layer. A semiconductor layer, wherein the crystal layer is laminated via an insulating layer, and (1) having a first silicon single crystal layer suitable for disposing a semiconductor laser element;
(2) If the light receiving element and the transistor are formed in the second semiconductor single crystal layer on the insulating layer, the influence of the parasitic capacitance generated between the light receiving element and the transistor and the first silicon single crystal layer is eliminated. (3) A reflection mirror is formed due to a difference in refractive index between the first silicon single crystal layer, the insulating layer, and the second semiconductor single crystal layer. Light transmitted through and penetrating into the first silicon single crystal layer can be reflected to the second semiconductor single crystal layer on which the light receiving element is formed, thereby improving the light receiving sensitivity. Thus, a semiconductor substrate suitable for integrating light receiving and emitting elements can be realized.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a method of manufacturing the semiconductor substrate.

FIG. 3 is a sectional view showing the method of manufacturing the light receiving element.

FIG. 4 is a sectional view showing a state near a silicon oxide film of the semiconductor light emitting device according to the second embodiment of the present invention.

FIG. 5 is a diagram showing a reflectance characteristic of the semiconductor light emitting device with respect to a silicon oxide film.

FIG. 6 is a top view of a conventional semiconductor light emitting device.

FIG. 7 is an EE cross-sectional view of a conventional semiconductor light emitting device.

[Description of Signs] 1 N-type silicon single crystal substrate 2 N-type silicon buried region 4 silicon oxide film layer 5 silicon single crystal substrate 6 protective layer 7 N-type silicon contact region 8 electrode 9 P-type silicon diffusion region 10 semiconductor laser element 11 Reflection mirror 12 P-type silicon isolation region 13 N-type silicon emitter region 14 P-type silicon base region 15 N-type silicon collector contact region 16 semiconductor substrate 17 light receiving element section 18 transistor section L1 optical path L2 optical path L3 optical path

Continued on the front page (72) Inventor Kazuhiko Yamanaka 1-1, Yukicho, Takatsuki-shi, Osaka, Japan Inside Matsushita Electronics Corporation (72) Inventor Hideyuki Nakanishi 1-1, Yukicho, Takatsuki-shi, Osaka, Matsushita Electronics Corporation (72) Inventor Daisuke Ueda 1-1, Komachi, Takatsuki City, Osaka Prefecture F-term (reference) 5D119 AA01 AA05 AA10 AA41 BA01 BB01 CA10 DA05 EA02 EA03 EC45 EC47 FA08 JA57 JA64 KA02 KA19 KA43 LB07 5F041 AA33 CB32 DA19 DA32 DA36 EE23 5F073 AB14 BA04 DA22 EA14 FA13

Claims (19)

[Claims] A substrate, an insulating layer formed on the substrate, and a semiconductor layer formed on the insulating layer;
A semiconductor light emitting device having a semiconductor light emitting element mounted on the substrate and an electronic element formed on the semiconductor layer. 2. A recess is formed in a part of the substrate or the semiconductor layer, the semiconductor light emitting element is placed in the recess, and a mirror that reflects light from the semiconductor light emitting element is formed on a side surface of the recess. The semiconductor light emitting device according to claim 1, wherein: 3. The semiconductor light emitting device according to claim 1, wherein the electronic element formed on the semiconductor layer is a light receiving element. 4. The semiconductor light emitting device according to claim 1, wherein the electronic element formed in the semiconductor layer is a transistor. 5. A concave portion is formed in a part of the substrate, the semiconductor light emitting element is placed in the concave portion, and a mirror that reflects light from the semiconductor light emitting element is formed on a side surface of the concave portion. 2. The semiconductor light emitting device according to claim 1, wherein the electronic elements formed in the layer are a light receiving element and a transistor. 6. The semiconductor light emitting device according to claim 2, wherein an angle between one side surface of the concave portion and a bottom surface of the concave portion is not less than 40 ° and not more than 50 °. 7. The method according to claim 1, wherein the substrate is {011} from a {100} plane.
6. The semiconductor light emitting device according to claim 2, wherein the substrate is a substrate having a surface inclined in a direction as a main surface. 8. The semiconductor light emitting device according to claim 7, wherein an inclination angle of said inclined plane with respect to a {100} plane is 5 ° or more and 15 ° or less. 9. The semiconductor light emitting device according to claim 1, wherein said substrate and said semiconductor layer are made of silicon. 10. The semiconductor light emitting device according to claim 1, wherein said substrate or said semiconductor layer is made of a compound semiconductor. 11. The semiconductor light emitting device according to claim 1, wherein said semiconductor layer is a layer formed by mounting a semiconductor substrate on said insulating layer. 12. The semiconductor light emitting device according to claim 1, wherein the plane orientation of the main surface of the substrate is different from the plane orientation of the main surface of the semiconductor layer. 13. The semiconductor light emitting device according to claim 1, wherein the semiconductor layer is made of a semiconductor having a {100} plane or a {111} plane as a main surface. 14. The semiconductor light emitting device according to claim 1, wherein said insulating film is a silicon oxide film. 15. The semiconductor light emitting device according to claim 1, wherein said insulating film and said semiconductor layer are alternately formed a plurality of times. 16. When the wavelength of the light radiated from the light emitting element in a vacuum is λ, the thickness of the insulating layer is D, and the refractive index of the insulating layer is N, approximately: 2. The semiconductor light emitting device according to claim 1, wherein a relationship (where m is an integer) is satisfied. 17. The wavelength of the light radiated from the light emitting element in a vacuum is λ, the thickness of the insulating layer is D, the refractive index of the insulating layer is N, the traveling direction in the insulating layer is When the angle between the insulating layer and the lamination direction is θ, approximately 2. The semiconductor light emitting device according to claim 1, wherein a relationship (where m is an integer) is satisfied. 18. The semiconductor light emitting device according to claim 1, wherein a reflectance of light emitted from the light emitting element at the insulating layer is 30% or more. 19. A semiconductor device comprising a substrate, an insulating layer formed on the substrate, and a semiconductor layer formed on the insulating layer, wherein a wavelength of light transmitted through the insulating layer in a vacuum is λ. Where D is the thickness of the insulating layer, N is the refractive index of the insulating layer, and θ is the angle between the traveling direction in the insulating layer and the laminating direction of the insulating layer. A semiconductor substrate that satisfies the relationship (where m is an integer).