JP2001343497A - Method for manufacturing electron beam generator - Google Patents
Method for manufacturing electron beam generatorInfo
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- JP2001343497A JP2001343497A JP2000168348A JP2000168348A JP2001343497A JP 2001343497 A JP2001343497 A JP 2001343497A JP 2000168348 A JP2000168348 A JP 2000168348A JP 2000168348 A JP2000168348 A JP 2000168348A JP 2001343497 A JP2001343497 A JP 2001343497A
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- cavity
- mode
- electron beam
- resonance frequency
- beam generator
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、共振空洞内にマイ
クロ波を供給し、その共振空洞内に発生した電界により
電子ビームを加速する電子ビーム発生装置の製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electron beam generator for supplying a microwave into a resonance cavity and accelerating an electron beam by an electric field generated in the resonance cavity.
【０００２】[0002]
【従来の技術】図１及び図２を参照して、フォトカソー
ドと共振空洞からなる従来の電子ビーム発生装置の構造
について説明する。なお、図１及び図２に示された電子
ビーム発生装置の構造は、本発明の実施例による方法で
作製される電子ビーム発生装置の構造と同一である。2. Description of the Related Art The structure of a conventional electron beam generator comprising a photocathode and a resonant cavity will be described with reference to FIGS. The structure of the electron beam generator shown in FIGS. 1 and 2 is the same as the structure of the electron beam generator manufactured by the method according to the embodiment of the present invention.
【０００３】図１（Ａ）に、フォトカソードと共振空洞
の断面図を示す。銅製の円筒状の容器１により空洞２が
画定されている。円筒状容器１の一方の端は、銅製の蓋
３で密閉されている。蓋３と円筒状容器１との間には、
金属製のＯリングが介在し、気密性が保たれている。円
筒状容器１の他端は、中央に円形の開口４が形成された
フランジ構造を有する。FIG. 1A is a sectional view of a photocathode and a resonant cavity. A cavity 2 is defined by a cylindrical container 1 made of copper. One end of the cylindrical container 1 is closed by a copper lid 3. Between the lid 3 and the cylindrical container 1,
A metal O-ring is interposed to maintain airtightness. The other end of the cylindrical container 1 has a flange structure in which a circular opening 4 is formed in the center.
【０００４】蓋３の内面のほぼ中央に、フォトカソード
５が取り付けられている。フォトカソード５は、例えば
マグネシウムや無酸素銅で形成される。[0004] A photocathode 5 is mounted substantially at the center of the inner surface of the lid 3. The photocathode 5 is formed of, for example, magnesium or oxygen-free copper.
【０００５】円筒状容器１の内周面の軸方向の所定の位
置に、全周囲からその中心軸に向かって庇状に突出した
突出部６が形成されている。突出部６は、その中心部分
に円形の貫通孔７を画定する。突出部６により、空洞２
が、フォトカソード５側の第１空洞２ａと開口４側の第
２空洞２ｂに分離される。[0005] At a predetermined position in the axial direction of the inner peripheral surface of the cylindrical container 1, a protruding portion 6 protruding like an eave from the entire periphery toward the central axis thereof is formed. The protrusion 6 defines a circular through hole 7 at the center thereof. The protrusion 2 allows the cavity 2
Are separated into a first cavity 2a on the photocathode 5 side and a second cavity 2b on the opening 4 side.
【０００６】蓋３の内部に流路１０が形成されている。
流路１０は、蓋３の中心軸に関して４回回転対称になる
ように配置された４つの流路から構成される。各流路１
０は、蓋３の外周面から中心軸に向かって延在し、中心
に至る手前で折り返し、外周面に戻る。[0006] A channel 10 is formed inside the lid 3.
The flow path 10 is composed of four flow paths arranged so as to be four times rotationally symmetric with respect to the central axis of the lid 3. Each channel 1
Numeral 0 extends from the outer peripheral surface of the lid 3 toward the central axis, turns back before reaching the center, and returns to the outer peripheral surface.
【０００７】円筒状容器１に、流路１１及び１２が形成
されている。流路１１は、円筒状容器１の中心軸方向に
関して突出部６に対応する位置に設けられている。流路
１２は、円筒状容器１の開口４が設けられた端部近傍に
形成されている。[0007] Flow paths 11 and 12 are formed in the cylindrical container 1. The flow channel 11 is provided at a position corresponding to the protruding portion 6 in the central axis direction of the cylindrical container 1. The flow channel 12 is formed near the end of the cylindrical container 1 where the opening 4 is provided.
【０００８】図１（Ｂ）は、図１（Ａ）の一点鎖線Ｂ１
−Ｂ１における断面図、すなわち流路１１の形成された
位置における断面図を示す。図１（Ｂ）の一点鎖線Ａ１
−Ａ１における断面が図１（Ａ）に相当する。流路１１
は、円筒状容器１の外周面から半径方向に沿い突出部６
の内部まで延在する。円筒状容器１の内周面よりも径の
小さな位置において折り返され、半径方向に沿って外周
面に戻る。FIG. 1B is a dashed line B1 of FIG.
FIG. 2B is a cross-sectional view at B1, that is, a cross-sectional view at a position where the flow channel 11 is formed. The dashed line A1 in FIG.
A cross section at -A1 corresponds to FIG. Channel 11
Are projecting portions 6 along the radial direction from the outer peripheral surface of the cylindrical container 1.
Extending to the inside of. It is folded back at a position smaller in diameter than the inner peripheral surface of the cylindrical container 1 and returns to the outer peripheral surface along the radial direction.
【０００９】図１（Ｃ）は、図１（Ａ）の一点鎖線Ｃ１
−Ｃ１における断面図、すなわち流路１２の形成された
位置における断面図を示す。図１（Ｃ）の一点鎖線Ａ１
−Ａ１における断面が図１（Ａ）に相当する。流路１２
は、８本設けられている。各流路１２は、図１（Ａ）に
示すように、円筒状容器１の中心軸に平行に延在する流
路部分、及びその両端においてその流路部分にそれぞれ
連通し、円筒状容器１の外周面に開口する２本の流路部
分から構成される。なお、図１（Ｃ）に示すように、流
路１２が中心軸に対して回転対称になるように配置され
ていないのは、図２（Ｂ）を参照して後述する導波管の
配置を考慮したためである。FIG. 1C is a dashed line C1 of FIG.
FIG. 2 shows a cross-sectional view at −C1, that is, a cross-sectional view at a position where the flow channel 12 is formed. The dashed-dotted line A1 in FIG.
A cross section at -A1 corresponds to FIG. Channel 12
Are provided. As shown in FIG. 1 (A), each flow channel 12 communicates with the flow channel portion extending parallel to the central axis of the cylindrical container 1 and at both ends thereof with the flow channel portion. It is composed of two flow path portions that open to the outer peripheral surface of the. As shown in FIG. 1C, the reason why the flow path 12 is not arranged so as to be rotationally symmetric with respect to the central axis is the arrangement of the waveguide described later with reference to FIG. Is considered.
【００１０】図２（Ａ）は、図１（Ｂ）の一点鎖線Ａ２
−Ａ２における断面図を示す。第１空洞２ａの側壁に２
つのレーザ導入孔２０が形成されている。レーザ導入孔
２０にはレーザ光を透過する窓２１が設けられ、空洞２
内が気密に保たれている。レーザ導入孔２０から第１空
洞２ａ内に入射したレーザ光は、フォトカソード５を照
射する。FIG. 2A is a dashed line A2 of FIG.
The sectional view in -A2 is shown. 2 on the side wall of the first cavity 2a
One laser introduction hole 20 is formed. The laser introduction hole 20 is provided with a window 21 for transmitting laser light,
The inside is kept airtight. The laser light that has entered the first cavity 2 a from the laser introduction hole 20 irradiates the photocathode 5.
【００１１】図２（Ｂ）は、図１（Ｂ）の一点鎖線Ｂ２
−Ｂ２における断面図を示す。導波管８が円筒状容器１
の側壁を貫通し、第２空洞２ｂに連通している。導波管
８が取り付けられた位置に対向する側壁部に、真空ダク
ト９が取り付けられている。真空ダクト９を介して空洞
２ａ及び２ｂ内が真空排気される。FIG. 2B is a dashed line B2 of FIG.
The sectional view in -B2 is shown. Waveguide 8 is cylindrical container 1
And communicates with the second cavity 2b. A vacuum duct 9 is attached to a side wall portion facing the position where the waveguide 8 is attached. The interiors of the cavities 2 a and 2 b are evacuated via the vacuum duct 9.
【００１２】次に、図１及び図２に示すＲＦガンの動作
について説明する。Next, the operation of the RF gun shown in FIGS. 1 and 2 will be described.
【００１３】図２（Ａ）に示すレーザ導入孔２０から第
１空洞２ａ内に、紫外レーザ光、例えば波長２６６ｎ
ｍ、パルス幅５〜１０ｐｓのＮｄ：ＹＡＧレーザ発振器
から出射したレーザビームを入射する。レーザビームが
フォトカソード５を照射すると、フォトカソード５から
光電子が放出される。An ultraviolet laser beam, for example, having a wavelength of 266 nm, is introduced into the first cavity 2a from the laser introduction hole 20 shown in FIG.
A laser beam emitted from a Nd: YAG laser oscillator having m and a pulse width of 5 to 10 ps is incident. When the photocathode 5 is irradiated with the laser beam, photoelectrons are emitted from the photocathode 5.
【００１４】レーザビームの照射に同期して、図２
（Ｂ）に示す導波管８から第２空洞２ｂ内に、周波数
２．８５６ＧＨｚ、電力６〜７ＭＷのマイクロ波を、１
周期あたり約１μｓ以上の期間だけ入射する。第１空洞
２ａが、電磁的に第２空洞２ｂに結合しているため、第
２空洞２ｂのみならず第１空洞２ａ内にも高周波電場が
励起される。第１空洞２ａ及び第２空洞２ｂの軸方向の
長さは、それぞれ高周波電場の１／４波長程度及び１／
２波長程度である。第１空洞２ａは、ハーフセルと呼ば
れ、第２空洞２ｂはフルセルと呼ばれる。In synchronism with laser beam irradiation, FIG.
A microwave having a frequency of 2.856 GHz and a power of 6 to 7 MW is introduced into the second cavity 2 b from the waveguide 8 shown in FIG.
Light is incident for a period of about 1 μs or more per cycle. Since the first cavity 2a is electromagnetically coupled to the second cavity 2b, a high-frequency electric field is excited not only in the second cavity 2b but also in the first cavity 2a. The axial lengths of the first cavity 2a and the second cavity 2b are about 1/4 wavelength and 1 /
It is about two wavelengths. The first cavity 2a is called a half cell, and the second cavity 2b is called a full cell.
【００１５】フォトカソード５から放出された光電子
が、第１空洞２ａ及び第２空洞２ｂ内に励起された高周
波電場により加速され、開口４を通って外部に放出され
る。このようにして、パルス状の電子ビームが得られ
る。Photoelectrons emitted from the photocathode 5 are accelerated by the high-frequency electric field excited in the first cavity 2a and the second cavity 2b, and are emitted outside through the opening 4. Thus, a pulsed electron beam is obtained.
【００１６】図１（Ａ）に示す流路１０、１１及び１２
に冷却水を流しておく。冷却水により、円筒状容器１及
び蓋３の温度上昇を抑制することができる。大電力のマ
イクロ波の入射が可能になるため、高エネルギの電子ビ
ームを得ることができる。さらに、電子ビーム取り出し
の繰り返し周波数を高めることが可能になる。The flow paths 10, 11 and 12 shown in FIG.
Pour cooling water through. The cooling water can suppress an increase in the temperature of the cylindrical container 1 and the lid 3. Since high-power microwaves can be incident, a high-energy electron beam can be obtained. Further, it is possible to increase the repetition frequency of extracting the electron beam.
【００１７】[0017]
【発明が解決しようとする課題】最適な電子加速条件を
満足するために、第１空洞２ａと第２空洞２ｂとの電磁
的結合係数を最適な値にする必要がある。複数の加速空
洞が直線に沿って配列した従来の粒子加速器において
は、隣り合う加速空洞の間に結合空洞を配置することに
より、結合係数が調整される。In order to satisfy the optimum electron acceleration conditions, it is necessary to set the electromagnetic coupling coefficient between the first cavity 2a and the second cavity 2b to an optimum value. In a conventional particle accelerator in which a plurality of acceleration cavities are arranged along a straight line, the coupling coefficient is adjusted by arranging coupling cavities between adjacent acceleration cavities.
【００１８】しかしながら、図１及び図２に示した電子
ビーム発生装置を用いて、高品質（低エミッタンス）の
電子ビームを得るために、空洞内に大きな高周波電磁エ
ネルギの蓄積が要求される。空洞内の高周波定在波の作
る高電場は、例えば１００ＭＶ／ｍ以上になる。第１空
洞２ａと第２空洞２ｂとの間に結合空洞を配置すると、
この高電場のために放電しやすくなってしまう。このた
め、結合空洞を用いて結合係数を調節することは困難で
ある。However, in order to obtain a high-quality (low emittance) electron beam using the electron beam generator shown in FIGS. 1 and 2, it is necessary to store a large amount of high-frequency electromagnetic energy in the cavity. The high electric field generated by the high-frequency standing wave in the cavity is, for example, 100 MV / m or more. When a coupling cavity is arranged between the first cavity 2a and the second cavity 2b,
This high electric field makes it easier to discharge. Therefore, it is difficult to adjust the coupling coefficient using the coupling cavity.
【００１９】本発明の目的は、結合空洞を用いることな
く、共振空洞間の結合係数を調節することが可能な電子
ビーム発生装置の製造方法を提供することである。An object of the present invention is to provide a method of manufacturing an electron beam generator capable of adjusting a coupling coefficient between resonance cavities without using a coupling cavity.
【００２０】[0020]
【課題を解決するための手段】本発明の一観点による
と、第１の空洞、及び該第１の空洞に電磁気的に結合し
た第２の空洞とを有する加速空洞を画定する導電性容器
の該第１の空洞内に電磁波を入射させる工程と、前記加
速空洞の、０モード及びπモードの共振周波数を測定す
る工程と、前記測定工程で測定された０モード及びπモ
ードの共振周波数に基づいて、前記導電性容器の内壁の
削るべき部分を決定し、決定された削るべき部分を削る
工程とを有する電子ビーム発生装置の製造方法が提供さ
れる。According to one aspect of the present invention, a conductive container defining an accelerating cavity having a first cavity and a second cavity electromagnetically coupled to the first cavity. A step of injecting an electromagnetic wave into the first cavity; a step of measuring the 0 mode and π mode resonance frequencies of the acceleration cavity; and a step of measuring the 0 mode and π mode resonance frequencies measured in the measurement step. Determining a portion of the inner wall of the conductive container to be shaved, and shaving the determined portion to be shaved.
【００２１】０モード及びπモードの共振周波数を測定
し、測定結果が所定の周波数になるように第１及び第２
の空洞の内面を削ると、２つの空洞の結合係数を所望の
値に設定することができる。The resonance frequencies of the 0 mode and the π mode are measured, and the first and second resonance frequencies are set so that the measurement result becomes a predetermined frequency.
By cutting the inner surface of the cavity, the coupling coefficient of the two cavities can be set to a desired value.
【００２２】[0022]
【発明の実施の形態】図１及び図２に、本発明の実施例
による方法で製造される電子ビーム発生装置の断面図を
示す。詳細な構造は、既に説明したので、ここでは、説
明を省略する。1 and 2 are cross-sectional views of an electron beam generator manufactured by a method according to an embodiment of the present invention. Since the detailed structure has already been described, the description is omitted here.
【００２３】図３に、電子ビーム発生装置の断面図を再
掲する。円筒状容器１が、第１の部分１ａと第２の部分
１ｂを含んで構成される。第１の部分１ａは、第１空洞
２ａの円筒状側面Ｓ１、突起部６の第１空洞２ａ側の面
Ｓ２、貫通孔７の側面Ｓ３、及び突起部６の第２空洞２
ｂ側の面Ｓ４を画定する。面Ｓ２及びＳ４は、円環状の
平面である。側面Ｓ３は、円筒状容器１の中心軸を含む
仮想平面内の円周を、円筒状容器１の中心軸を中心とし
て１回転させた時に描かれるドーナツ状の曲面の中心軸
側の面と同一の形状を有する。FIG. 3 shows a sectional view of the electron beam generator again. The cylindrical container 1 includes a first portion 1a and a second portion 1b. The first portion 1a includes a cylindrical side surface S1 of the first cavity 2a, a surface S2 of the protrusion 6 on the first cavity 2a side, a side surface S3 of the through hole 7, and a second cavity 2 of the protrusion 6.
A surface S4 on the b side is defined. The surfaces S2 and S4 are annular flat surfaces. The side surface S3 is the same as the surface on the central axis side of the donut-shaped curved surface drawn when the circumference in the virtual plane including the central axis of the cylindrical container 1 is rotated once around the central axis of the cylindrical container 1. It has the shape of
【００２４】第２の部分１ｂは、第２空洞２ｂの円筒状
の側面Ｓ５、端面Ｓ６、及び曲面Ｓ７を画定する。端面
Ｓ６は、円環状の形状を有する平面である。曲面Ｓ７
は、端面Ｓ６と開口４の円筒状内周面とを滑らかに接続
する。円筒状容器１の中心軸を含む仮想平面と曲面Ｓ７
との交線は、１／４円周になる。The second portion 1b defines a cylindrical side surface S5, an end surface S6, and a curved surface S7 of the second cavity 2b. The end face S6 is a plane having an annular shape. Curved surface S7
Connects the end surface S6 and the cylindrical inner peripheral surface of the opening 4 smoothly. A virtual plane including the central axis of the cylindrical container 1 and a curved surface S7
Intersects with a 1/4 circle.
【００２５】図４に、図３に示した電子ビーム発生装置
の共振特性を示す。横軸は第２空洞２ｂに入射する電磁
波の周波数を単位「ＭＨｚ」で表し、縦軸は、反射波の
強度を単位「ｄＢ」で表す。周波数２８５６ＭＨｚの位
置に現れている大きなピークｐπがπモードの共振に対
応し、周波数約２８５２．７ＭＨｚの位置に現れている
ピークｐ0が０モードの共振に対応する。FIG. 4 shows the resonance characteristics of the electron beam generator shown in FIG. The horizontal axis represents the frequency of the electromagnetic wave incident on the second cavity 2b in units of “MHz”, and the vertical axis represents the intensity of the reflected wave in units of “dB”. The large peak pπ appearing at the frequency of 2856 MHz corresponds to the π mode resonance, and the peak p 0 appearing at the frequency of about 2852.7 MHz corresponds to the 0 mode resonance.
【００２６】πモードで共振している時には、図３の第
１空洞２ａ内に発生している電場の向きと、第２空洞２
ｂ内に発生している電場の向きとが相互に逆になる。フ
ォトカソード５から放出された光電子が第１空洞２ａ内
の電場で加速され、第２空洞２ｂに入射する。光電子が
第２空洞２ｂに入射したときに、第２空洞２ｂ内の電場
の向きが反転し、光電子は第２空洞２ｂ内でも加速され
る。このように、光電子は、πモードの共振により発生
している高周波電場により加速される。When resonating in the π mode, the direction of the electric field generated in the first cavity 2a of FIG.
The directions of the electric field generated in b are opposite to each other. Photoelectrons emitted from the photocathode 5 are accelerated by an electric field in the first cavity 2a and enter the second cavity 2b. When the photoelectrons enter the second cavity 2b, the direction of the electric field in the second cavity 2b is reversed, and the photoelectrons are also accelerated in the second cavity 2b. Thus, the photoelectrons are accelerated by the high-frequency electric field generated by the π-mode resonance.
【００２７】０モードで共振している時には、第１空洞
２ａと第２空洞２ｂ内に、同一方向の電場が発生する。
０モードの共振は、光電子の加速には用いられない。従
って、πモードの共振周波数が２８５６ＭＨｚになる時
に、光電子が最も効率的に加速される。When resonating in the 0 mode, an electric field in the same direction is generated in the first cavity 2a and the second cavity 2b.
Zero mode resonance is not used for photoelectron acceleration. Therefore, when the π-mode resonance frequency becomes 2856 MHz, photoelectrons are most efficiently accelerated.
【００２８】図５に、πモードで共振している時の、第
１空洞２ａ及び第２空洞２ｂ内の中心軸上の電場の強さ
の分布を示す。横軸はカソード面からの距離を単位「ｍ
ｍ」で表し、縦軸は電場の強さを任意目盛で表す。カソ
ード面からの距離が０ｍｍ〜３２ｍｍの領域が第１空洞
２ａに相当し、カソード面からの距離が３２ｍｍ〜９０
ｍｍの領域が第２空洞２ｂに相当する。FIG. 5 shows the distribution of the electric field strength on the central axis in the first cavity 2a and the second cavity 2b when resonating in the π mode. The horizontal axis represents the distance from the cathode surface in the unit "m".
m, and the vertical axis represents the intensity of the electric field on an arbitrary scale. A region whose distance from the cathode surface is 0 mm to 32 mm corresponds to the first cavity 2a, and a region whose distance from the cathode surface is 32 mm to 90 mm.
The area of mm corresponds to the second cavity 2b.
【００２９】第１空洞２ａ内では、カソードの表面にお
いて電場の強さが最大になる。第２空洞２ｂ内では、カ
ソード面からの距離が約６０ｍｍの位置において電場の
強さが最大になる。第１空洞２ａ内の電場の最大値と第
２空洞２ｂ内の電場の最大値とが等しいとき、最も効率
的に光電子を加速することができる。第１空洞２ａと第
２空洞２ｂとの結合係数ｋが約１×１０-3のときに、こ
の最適な状態が得られることがわかった。πモードの共
振周波数をｆπ、０モードの共振周波数をｆ0とする
と、結合係数ｋは、In the first cavity 2a, the intensity of the electric field is maximized on the surface of the cathode. In the second cavity 2b, the electric field strength becomes maximum at a position at a distance of about 60 mm from the cathode surface. When the maximum value of the electric field in the first cavity 2a is equal to the maximum value of the electric field in the second cavity 2b, photoelectrons can be accelerated most efficiently. It has been found that this optimum state is obtained when the coupling coefficient k between the first cavity 2a and the second cavity 2b is about 1 × 10 −3 . Assuming that the resonance frequency of the π mode is fπ and the resonance frequency of the 0 mode is f 0 , the coupling coefficient k is
【００３０】[0030]
【数１】ｋ＝（ｆπ−ｆ0）／ｆπ と表される。上式から、πモードの共振周波数ｆπと０
モードの共振周波数ｆ0とを測定することにより、結合
係数ｋを求めることができる。πモードの共振周波数ｆ
πが２８５６ＭＨｚの場合、ｆπ−ｆ0が約３ＭＨｚの
ときに結合係数ｋが最適な値になる。K = (fπ−f 0 ) / fπ From the above equation, the resonance frequency fπ of the π mode and 0
By measuring the resonance frequency f 0 of the mode, the coupling coefficient k can be obtained. π mode resonance frequency f
When π is 2856 MHz, the coupling coefficient k becomes an optimum value when fπ−f 0 is about 3 MHz.
【００３１】次に、図３を参照して、実施例による電子
ビーム発生装置の製造方法について説明する。Next, a method of manufacturing the electron beam generator according to the embodiment will be described with reference to FIG.
【００３２】図３に示した電子ビーム発生装置の内面の
切削量と共振周波数の変動量とを、予め計算により求め
ておく。例えば、第１空洞２ａの円筒状側面Ｓ１を１μ
ｍだけ削ると、πモードの共振周波数ｆπが約７３．２
４６６ｋＨｚ低下し、０モードの共振周波数ｆ0が約４
５．９５ｋＨｚ低下する。突起部６の第１空洞２ａ側の
面Ｓ２を１μｍだけ削ると、πモードの共振周波数ｆπ
が約２７．５５９５ｋＨｚ低下し、０モードの共振周波
数ｆ0が約１７．７９ｋＨｚ低下する。The amount of cutting of the inner surface of the electron beam generator shown in FIG. 3 and the amount of fluctuation of the resonance frequency are obtained in advance by calculation. For example, the cylindrical side surface S1 of the first cavity 2a is 1 μm.
m, the resonance frequency fπ of the π mode is about 73.2.
466 kHz, and the 0 mode resonance frequency f 0 is about 4
5.95 kHz is reduced. When the surface S2 of the protrusion 6 on the first cavity 2a side is cut by 1 μm, the resonance frequency fπ of the π mode is obtained.
Is reduced by about 27.5595 kHz, and the resonance frequency f 0 of the 0 mode is reduced by about 17.79 kHz.
【００３３】貫通孔７の側面Ｓ３を１μｍだけ削ると、
πモードの共振周波数ｆπが約２７．４０７３ｋＨｚだ
け上昇し、０モードの共振周波数ｆ0が約２５．３２ｋ
Ｈｚだけ上昇する。突起部６の第２空洞２ｂ側の面Ｓ４
を１μｍだけ削ると、πモードの共振周波数ｆπが約２
０．０４４３ｋＨｚ上昇し、０モードの共振周波数ｆ 0
が約７．２８０ｋＨｚ上昇する。When the side surface S3 of the through hole 7 is cut by 1 μm,
The resonance frequency fπ of the π mode is about 27.4073 kHz
And the zero-mode resonance frequency f0Is about 25.32k
Hz. Surface S4 of protrusion 6 on second cavity 2b side
Is reduced by 1 μm, the resonance frequency fπ of the π mode becomes about 2
0.0443 kHz, and the resonance frequency f of the 0 mode 0
Rises by about 7.280 kHz.
【００３４】第２空洞２ｂの円筒状の側面Ｓ５を１μｍ
だけ削ると、πモードの共振周波数ｆπが約７３．５０
１１ｋＨｚ低下し、０モードの共振周波数ｆ0が約２
６．１８ｋＨｚ低下する。第２空洞２ｂの円筒状の端面
Ｓ６を１μｍだけ削ると、πモードの共振周波数ｆπが
約１９．９８８８ｋＨｚ低下し、０モードの共振周波数
ｆ0が約７．２１０ｋＨｚ低下する。曲面Ｓ７を１μｍ
だけ削ると、πモードの共振周波数ｆπが約２４．７７
０１ｋＨｚ上昇し、０モードの共振周波数ｆ0が約８．
８９６ｋＨｚ上昇する。The cylindrical side surface S5 of the second cavity 2b is 1 μm
, The resonance frequency fπ of the π mode is about 73.50.
11 kHz, and the 0 mode resonance frequency f 0 is about 2
6.18 kHz is reduced. When the cylindrical end face S6 of the second cavity 2b is cut by 1 μm, the π mode resonance frequency fπ decreases by about 19.9888 kHz, and the 0 mode resonance frequency f 0 decreases by about 7.210 kHz. 1 μm curved surface S7
, The resonance frequency fπ of the π mode is about 24.77.
The resonance frequency f 0 of the 0 mode is increased to about 8.
It increases by 896 kHz.
【００３５】まず、円筒状容器１の第１の部分１ａと第
２の部分１ｂとを、内面に数十μｍ程度の削り代を残す
ように粗く加工する。次に、πモードの共振周波数ｆπ
が２８５６ＭＨｚになるように、第２空洞２ｂの内面を
削る。削る面の切削量とπモードの共振周波数ｆπの変
動量との関係が予め分かっているため、πモードの共振
周波数ｆπを測定することにより、削るべき面と切削量
とを予測することができる。次に、πモードの共振周波
数ｆπと０モードの共振周波数ｆ0との差が３ＭＨｚに
なるように、第１空洞２ａの内面を削る。First, the first portion 1a and the second portion 1b of the cylindrical container 1 are roughly processed so as to leave a shaving allowance of about several tens μm on the inner surface. Next, the resonance frequency fπ of the π mode
Is set to 2856 MHz, and the inner surface of the second cavity 2b is shaved. Since the relationship between the amount of cutting of the surface to be cut and the variation of the π mode resonance frequency fπ is known in advance, the surface to be cut and the amount of cutting can be predicted by measuring the π mode resonance frequency fπ. . Next, the inner surface of the first cavity 2a is cut so that the difference between the resonance frequency fπ in the π mode and the resonance frequency f 0 in the 0 mode becomes 3 MHz.
【００３６】第１空洞１ａの内面を削ると、０モードの
共振周波数ｆ0のみならず、πモードの共振周波数ｆπ
も変わってしまう。このため、第２空洞２ｂの内面を削
る際に、第１空洞１ａの内面を削る時に生ずるであろう
πモードの共振周波数ｆπの変動量を予測して、第２空
洞２ｂの内面の切削量を決定することが好ましい。When the inner surface of the first cavity 1a is cut, not only the 0 mode resonance frequency f 0 but also the π mode resonance frequency fπ
Will also change. For this reason, when cutting the inner surface of the second cavity 2b, the amount of change in the resonance frequency fπ of the π mode that would occur when the inner surface of the first cavity 1a is cut is predicted, and the amount of cutting of the inner surface of the second cavity 2b is estimated. Is preferably determined.
【００３７】上述のように、実施例では、πモードの共
振周波数ｆπと０モードの共振周波数ｆ0とを測定し、
共振周波数が所望の周波数に近づくように、第１及び第
２空洞２ａ及び２ｂの内面を削る。これにより、電子ビ
ーム発生装置の共振空洞の共振周波数を所望の周波数に
調節することができる。さらに、２つの空洞の結合係数
を所望の値に設定することができる。As described above, in the embodiment, the resonance frequency fπ in the π mode and the resonance frequency f 0 in the 0 mode are measured,
The inner surfaces of the first and second cavities 2a and 2b are cut so that the resonance frequency approaches a desired frequency. Thereby, the resonance frequency of the resonance cavity of the electron beam generator can be adjusted to a desired frequency. Further, the coupling coefficient of the two cavities can be set to a desired value.
【００３８】上記実施例では、最初に第２空洞２ｂの内
面を削り、次に第１空洞２ａの内面を削ったが、１回の
共振周波数の測定後に、両方の空洞の内面を削り、共振
周波数の測定と切削とを交互に繰り返しながら、共振周
波数を徐々に所望の値に近づけていってもよい。In the above embodiment, first, the inner surface of the second cavity 2b was cut, and then the inner surface of the first cavity 2a was cut. However, after one measurement of the resonance frequency, the inner surfaces of both cavities were cut, The resonance frequency may be gradually approached to a desired value while alternately repeating the measurement of the frequency and the cutting.
【００３９】以上実施例に沿って本発明を説明したが、
本発明はこれらに制限されるものではない。例えば、種
々の変更、改良、組み合わせ等が可能なことは当業者に
自明であろう。The present invention has been described in connection with the preferred embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.
【００４０】[0040]
【発明の効果】以上説明したように、本発明によると、
電磁気的に結合した２つの空洞のπモードの共振周波数
と０モードの共振周波数とを測定しながら、空洞の内面
を削る。これにより、２つの空洞内に、電子ビームの加
速に適した電場を発生させることができる。As described above, according to the present invention,
While measuring the resonance frequency of the π mode and the resonance frequency of the 0 mode of the two electromagnetically coupled cavities, the inner surfaces of the cavities are shaved. Thus, an electric field suitable for accelerating the electron beam can be generated in the two cavities.
【図１】実施例による電子ビーム発生装置の断面図であ
る。FIG. 1 is a cross-sectional view of an electron beam generator according to an embodiment.
【図２】実施例による電子ビーム発生装置の断面図であ
る。FIG. 2 is a sectional view of an electron beam generator according to an embodiment.
【図３】実施例による電子ビーム発生装置の断面図であ
る。FIG. 3 is a sectional view of an electron beam generator according to an embodiment.
【図４】周波数と反射波との関係を示すグラフである。FIG. 4 is a graph showing a relationship between a frequency and a reflected wave.
【図５】電子ビーム発生装置内の電場の強さの分布を示
すグラフである。FIG. 5 is a graph showing an electric field intensity distribution in the electron beam generator.
【符号の説明】 １ 円筒状容器 ２ 空洞 ３ 蓋 ４ 開口 ５ フォトカソード ６ 突出部 ７ 貫通孔 ８ 導波管 ９ 真空ダクト １０、１１、１２ 流路 ２０ レーザ導入孔 ２１ 窓[Description of Signs] 1 Cylindrical container 2 Cavity 3 Lid 4 Opening 5 Photocathode 6 Projection 7 Through hole 8 Waveguide 9 Vacuum duct 10, 11, 12 Flow path 20 Laser introduction hole 21 Window
Claims (3)
的に結合した第２の空洞とを有する加速空洞を画定する
導電性容器の該第１の空洞内に電磁波を入射させる工程
と、 前記加速空洞の、０モード及びπモードの共振周波数を
測定する工程と、 前記測定工程で測定された０モード及びπモードの共振
周波数に基づいて、前記導電性容器の内壁の削るべき部
分を決定し、決定された削るべき部分を削る工程とを有
する電子ビーム発生装置の製造方法。1. An electromagnetic wave is incident into a first cavity of a conductive container defining an acceleration cavity having a first cavity and a second cavity electromagnetically coupled to the first cavity. Measuring the resonance frequencies of 0 mode and π mode of the accelerating cavity; and a portion of the inner wall of the conductive container to be cut based on the resonance frequencies of 0 mode and π mode measured in the measurement step. And a step of shaving the determined portion to be shaved.
０モードとπモードとの共振周波数の差周波数を、それ
ぞれ基準共振周波数及び基準差周波数と比較する工程
と、 比較結果に基づいて、前記導電性容器の内壁の削るべき
部分を決定し、決定された削るべき部分を削る工程とを
含む請求項１に記載の電子ビーム発生装置の製造方法。2. The step of shaving comprises: comparing a resonance frequency of the π mode measured in the measurement step and a difference frequency between the resonance frequencies of the 0 mode and the π mode with a reference resonance frequency and a reference difference frequency, respectively. The method of manufacturing an electron beam generator according to claim 1, further comprising: determining a portion to be shaved of the inner wall of the conductive container based on the comparison result, and shaving the determined portion to be shaved.
を求める工程を含み、決定された削るべき部分を、削る
べき厚さだけ削る請求項１または２に記載の電子ビーム
発生装置の製造方法。3. The manufacturing of the electron beam generator according to claim 1, wherein the shaving step further includes a step of calculating a thickness to be shaved, and shaping the determined portion to be shaved by the thickness to be shaved. Method.
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|---|---|---|---|
| JP2000168348A JP3737933B2 (en) | 2000-06-06 | 2000-06-06 | Manufacturing method of electron beam generator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011112038A2 (en) * | 2010-03-11 | 2011-09-15 | 포항공과대학교 산학협력단 | Apparatus for generating electron beams, and method for manufacturing same |
| WO2012043475A1 (en) * | 2010-09-27 | 2012-04-05 | 大学共同利用機関法人高エネルギー加速器研究機構 | Photo-cathode high-frequency electron-gun cavity apparatus |
-
2000
- 2000-06-06 JP JP2000168348A patent/JP3737933B2/en not_active Expired - Fee Related
Cited By (10)
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|---|---|---|---|---|
| WO2011112038A2 (en) * | 2010-03-11 | 2011-09-15 | 포항공과대학교 산학협력단 | Apparatus for generating electron beams, and method for manufacturing same |
| KR101078164B1 (en) * | 2010-03-11 | 2011-10-28 | 포항공과대학교 산학협력단 | Electron beam generating apparatus and method of manufacturing the same |
| WO2011112038A3 (en) * | 2010-03-11 | 2011-12-08 | 포항공과대학교 산학협력단 | Apparatus for generating electron beams, and method for manufacturing same |
| CN102859634A (en) * | 2010-03-11 | 2013-01-02 | 浦项工科大学校产学协力团 | Apparatus for generating electron beams, and method for manufacturing same |
| US20130001443A1 (en) * | 2010-03-11 | 2013-01-03 | Postech Academy-Industry Foundation | Apparatus for generating electron beams, and method for manufacturing same |
| JP2013521610A (en) * | 2010-03-11 | 2013-06-10 | ポステック アカデミー−インダストリー ファウンデーション | Electron beam generator and method of manufacturing the same |
| WO2012043475A1 (en) * | 2010-09-27 | 2012-04-05 | 大学共同利用機関法人高エネルギー加速器研究機構 | Photo-cathode high-frequency electron-gun cavity apparatus |
| JPWO2012043475A1 (en) * | 2010-09-27 | 2014-02-06 | 大学共同利用機関法人 高エネルギー加速器研究機構 | Photocathode high frequency electron gun cavity device |
| JP5828429B2 (en) * | 2010-09-27 | 2015-12-09 | 大学共同利用機関法人 高エネルギー加速器研究機構 | Photocathode high frequency electron gun cavity device |
| US9224571B2 (en) | 2010-09-27 | 2015-12-29 | Inter-University Research Institute Corporation | Photocathode high-frequency electron-gun cavity apparatus |
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