JP2001319855A - Target mark member, wafer stage, and electron beam lithography system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a target mark member resistant to charging. SOLUTION: The target mark member 160 has a MOSFET structure including a gate electrode 212, a source electrode 218, a drain electrode 220, an oxide film layer 214, and a base material 216. A predetermined mark used for adjusting the amount of deflection of an electron optical system is formed in the gate electrode 212. A predetermined voltage is applied to the gate electrode 212 so that a MOS structure in the center is reversed to form a surface reversed layer (channel). A predetermined voltage is supplied to the source electrode 218 and the drain electrode 220 is grounded. This can generate an electric field between the source and the drain. It is preferable that voltage is applied to the gate electrode 212, the source electrode 218 and the drain electrode 220, respectively, so that back scatter electrons are trapped by the channel and that the trapped electrons are sent to the ground.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a target mark member used for adjusting or calibrating the deflection amount of an electron beam in an electron beam processing apparatus such as an electron beam exposure apparatus, and more particularly, to a target mark member charged up by an electron beam. The present invention relates to a target mark member capable of reducing the degree of the target mark.

[0002]

2. Description of the Related Art In an electron beam exposure apparatus, a lens for adjusting a focal position and a deflection amount by an electron optical system by using a target mark member provided in the vicinity of a wafer to be exposed before performing exposure processing. It is necessary to perform calibration processing of the system and the deflection system. At the time of the exposure processing, the power supply output to be applied to the electron lens and the deflector in the electron beam exposure apparatus is adjusted based on the power applied to the lens system and the data applied to the deflection system obtained using the target mark member. Thus, the wafer can be appropriately irradiated with the electron beam.

FIG. 1 shows a conventional target mark member 20.
0 is shown. The target mark member 200 has a heavy metal layer 202, an insulating layer 204 made of a material such as SiO ₂ , SiN, and CaF, and a substrate layer 206 made of Si. On the heavy metal layer 202, a predetermined mark used for adjusting the focus and the degree of deflection of the electron optical system is formed. During the calibration process of the lens system and the deflection system, the electron beam is irradiated to the target mark member 200, and by measuring the intensity of the electrons scattered from the target mark member 200, various types of the electron beam deflection amount and the focal point are measured. Adjustments are made.

[0004]

FIG. 2 shows an energy band diagram of a conventional target mark member 200. As shown in FIG. As shown, a trap level exists at the Si—SiO ₂ interface. This trap level functions as a capture center for capturing electrons.

[0005] FIG.
FIG. 5 is an explanatory diagram for explaining the behavior of electrons when the light is incident on zero. When the electrons are injected into the target mark member 200, some of the electrons are scattered forward, and some of the electrons are scattered backward in a direction of protruding from the surface of the target mark member 200.

[0006] The backscattered electrons are emitted from the target mark member 2.
Before jumping out of the surface of 00, it is trapped at a trap level. In addition, electrons are emitted from the target mark
By being incident on 00, secondary electrons are emitted, and these secondary electrons are also trapped at the trap level, similarly to the backscattered electrons. Therefore, when the conventional target mark member 200 is irradiated with the electron beam, the electrons are accumulated at the trap level, so that the target mark member 200 is gradually charged up (charged). When the deflection amount adjustment process of the electron beam is performed using the charged target mark member 200, the electron beam drifts when the electron beam is irradiated, so that the deflection amount adjustment (calibration) process can be performed accurately. There was a problem that it was difficult.

Accordingly, an object of the present invention is to provide a target mark member, a wafer stage having the target mark member, and an electron beam exposure apparatus which can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0008]

According to a first aspect of the present invention, there is provided a target mark member used for adjusting a deflection amount of an electron beam in an electron beam processing apparatus. A target mark provided on the surface of the target mark member and having a predetermined mark to be irradiated with an electron beam, and a source electrode and a drain electrode formed of a conductive material. Provide a member.

The target mark member may have a channel for electrically connecting the source electrode and the drain electrode. The gate electrode is preferably formed of a heavy metal material. When electrons are trapped in the channel when the drain electrode is grounded to the ground and a predetermined bias voltage is applied between the source electrode and the drain electrode, the trapped electrons are sent to the ground. preferable. The target mark member may include an oxide film layer formed below the gate electrode, and the target mark member may have a MOSFET structure.

According to a second aspect of the present invention, there is provided an electron beam processing apparatus, comprising: a wafer stage on which a wafer to be processed is placed, wherein the gate electrode has a predetermined mark to be irradiated with an electron beam. And a target mark member having a source electrode and a drain electrode formed of a conductive material and used for adjusting a deflection amount of an electron beam. The target mark member may have a channel therein for electrically connecting the source electrode and the drain electrode.

According to a third aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a wafer with an electron beam, comprising: an electron gun for generating an electron beam; A deflector for deflecting the light, a wafer stage on which a wafer is placed, wherein the wafer stage has a gate electrode formed with a predetermined mark to be irradiated with an electron beam, and a source electrode and a drain electrode formed of a conductive material. And a target mark member used for adjusting the amount of electron beam deflection by the deflector. It is preferable that the target mark member has a channel for electrically connecting the source electrode and the drain electrode inside.

The above summary of the present invention does not enumerate all of the necessary features of the present invention, and a sub-combination of these features can also be an invention.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and are described in the embodiments. Not all combinations of features are essential to the solution of the invention.

FIG. 4 is a configuration diagram of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 64 with an electron beam, and a control system 140 for controlling the operation of each component of the exposure unit 150.

An exposure unit 150 irradiates an electron beam irradiating system 110 for irradiating a predetermined electron beam into the housing 10, deflects the electron beam radiated from the electron beam irradiating system 110, and emits an electron beam near the mask 30. Projection system 112 for adjusting the image forming position in the above, and adjusting lens system 1 for adjusting the focus of the crossover image of the electron beam
And a wafer projection system for deflecting the electron beam passing through the mask 30 to a predetermined area of the wafer 64 placed on the wafer stage 62 and adjusting the direction and size of the image of the pattern transferred to the wafer 64 And an electron optical system including the optical system.

The exposure section 150 includes a mask stage 72 on which the mask 30 having a plurality of blocks each having a pattern to be exposed on the wafer 64 is mounted, and a mask stage driving section 68 for driving the mask stage 72.
And a stage system including a wafer stage 62 on which a wafer 64 on which a pattern is to be exposed is mounted, and a wafer stage driving unit 70 for driving the wafer stage 62. Further, the exposure unit 150 detects electrons scattered from the wafer stage 62 side and adjusts the electron optics into an electric signal corresponding to the amount of scattered electrons.
Having.

The electron beam irradiation system 110 has a first electron lens 14 for determining the focal position of the electron beam by the electron gun 12 for generating the electron beam, and a rectangular opening (slit) for passing the electron beam. Slit part 1
6. Since it takes a predetermined time for the electron gun 12 to generate a stable electron beam, the electron gun 12 may always generate an electron beam during the exposure processing.
It is preferable that the slit is formed in accordance with the shape of a block including a predetermined pattern formed on the mask 30. 4, the optical axis of the electron beam when the electron beam emitted from the electron beam irradiation system 110 is not deflected by the electron optical system is represented by a chain line A.

The mask projection system 112 includes a first deflector 18, a second deflector 22, and a third deflector 26 as a mask deflection system for deflecting the electron beam, and a mask focus for adjusting the focus of the electron beam. It has a second electron lens 20 as a system and a first blanking electrode 24. The first deflector 18 and the second deflector 22 perform deflection for irradiating a predetermined region on the mask 30 with an electron beam. For example, the predetermined area may be a block having a pattern to be transferred to the wafer 64. As the electron beam passes through the pattern, the cross-sectional shape of the electron beam becomes the same as the pattern. An image of the electron beam passing through the block on which the predetermined pattern is formed is defined as a pattern image. The third deflector 26 deflects the trajectory of the electron beam passing through the first deflector 18 and the second deflector 22 substantially parallel to the optical axis A. The second electron lens 20 has a function of forming an image of the opening of the slit section 16 on the mask 30 placed on the mask stage 72.

The adjustment lens system 114 includes the third electronic lens 2
8 and a fourth electronic lens 32. The third electronic lens 28 and the fourth electronic lens 32
Focus on 4. The wafer projection system 116 includes:
The fifth electronic lens 40, the sixth electronic lens 46, the seventh electronic lens 50, the eighth electronic lens 52, the ninth electronic lens 66, the fourth deflector 34, the fifth deflector 38, 6
The deflector 42, the main deflector 56, the sub deflector 58, and the second
It has a blanking electrode 36 and a round aperture section 48.

The pattern image rotates depending on the set value of the lens strength. The fifth electron lens 40 adjusts the amount of rotation of the pattern image of the electron beam that has passed through a predetermined block of the mask 30. Sixth electronic lens 46 and seventh electronic lens 5
0 adjusts the reduction ratio of the pattern image transferred to the wafer 64 with respect to the pattern formed on the mask 30. The eighth electronic lens 52 and the ninth electronic lens 66 function as objective lenses. Fourth deflector 34 and sixth deflector 42
Deflects the electron beam in the direction of the optical axis A downstream of the mask 30 with respect to the traveling direction of the electron beam. The fifth deflector 38 deflects the electron beam so as to be substantially parallel to the optical axis A. The main deflector 56 and the sub deflector 58
The electron beam is deflected so that a predetermined area on the electron beam 4 is irradiated with the electron beam. In the present embodiment, the main deflector 56
Is used to deflect the electron beam between subfields including a plurality of areas (shot areas) that can be irradiated with one shot of the electron beam, and the sub deflector 58 is used to deflect between the shot areas in the subfield. Used.

The round aperture section 48 has a circular opening (round aperture). The first blanking electrode 24 and the second blanking electrode 36 can turn on / off the electron beam synchronously at a high speed, and more specifically, have a function of deflecting the electron beam so as to hit the outside of the round aperture. Have. That is, the first blanking electrode 24 and the second blanking electrode 36 can control the amount of the electron beam reaching the wafer 64 without causing displacement of the pattern image formed on the wafer 64. . Therefore, the first blanking electrode 24 and the second blanking electrode 36 can prevent the electron beam from traveling downstream from the round aperture section 48 in the traveling direction of the electron beam. The electron gun 12
Since the electron beam is always irradiated during the exposure process,
The first blanking electrode 24 and the second blanking electrode 36 are provided downstream from the round aperture unit 48 when changing the pattern to be transferred to the wafer 64 and further when changing the area of the wafer 64 where the pattern is exposed. It is desirable to deflect the electron beam so that the electron beam does not travel.

The control system 140 includes an overall control unit 130 and an individual control unit 120. The individual control unit 120 includes a deflection control unit 82, a mask stage control unit 84, a shot control unit 86, an electron lens control unit 88, a reflected electron processing unit 90, and a wafer stage control unit 92. The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120. The deflection control unit 82 includes a first deflector 18, a second deflector 22, a third deflector 26, a fourth deflector 34, a fifth deflector 38, and a sixth deflector.
The deflector 42, the main deflector 56, and the sub deflector 58 are controlled. The mask stage control unit 84 controls the mask stage driving unit 68 to move the mask stage 72.

The shot controller 86 controls the first blanking electrode 24 and the second blanking electrode 36. In the present embodiment, the first blanking electrode 24 and the second blanking electrode 36 are controlled so as to irradiate the wafer 64 with an electron beam during exposure, and to prevent the electron beam from reaching the wafer 64 except during exposure. Is desirable. The electronic lens control unit 88 includes a first electronic lens 14, a second electronic lens 20, a third electronic lens 28, and a fourth electronic lens 3.
2. The current supplied to the fifth electronic lens 40, the sixth electronic lens 46, the seventh electronic lens 50, the eighth electronic lens 52, and the ninth electronic lens 66 is controlled. Backscattered electron processing unit 90
Detects digital data indicating the amount of electrons based on the electric signal detected by the electron detection unit 60.

The wafer stage controller 92 causes the wafer stage drive 70 to move the wafer stage 62 to a predetermined position.

The electron beam exposure apparatus 10 according to the present embodiment
The operation of 0 will be described. Electron beam exposure apparatus 100
Performs an adjustment process for adjusting the configuration of the electron optical system and the like before performing the exposure process. Hereinafter, first, the adjustment processing of the electron optical system before the exposure processing will be described. The wafer stage 62 has a target mark member 160 used for adjusting the focus and the degree of deflection of the electron beam.
Is provided. The target mark member 160 is preferably provided on the wafer stage 62 at a location other than the area where the wafer is placed.

First, in order to focus the electron beam, the wafer stage controller 92 moves the target mark member 160 for focus adjustment provided on the wafer stage 62 by the wafer stage driver 70 to the vicinity of the optical axis A. Let it. Next, the focal position of each lens is adjusted to a predetermined position, and the electron beam is directed by the deflector to the target mark member 1.
Scanning on the mark of 60, the electronic detector 60
Outputs an electric signal corresponding to the reflected electrons generated when the target mark member 160 is irradiated with the electron beam, and the reflected electron processing unit 90 detects the amount of the reflected electrons and notifies the general control unit 130. The overall control unit 130 determines whether the lens system is in focus based on the detected amount of electrons. The general control unit 130 controls the current supplied to each electron lens so that the differential value of the detected waveform of the reflected electrons is maximized.

For example, when the coordinate system of the electron beam exposure apparatus 100 is configured based on a laser interferometer or the like in order to perform high-precision exposure processing, the deflection coordinate system of the electron beam and the orthogonal coordinates based on the laser interferometer are used. The system must be strictly calibrated. Therefore, to adjust (calibrate) the amount of deflection after focusing the electron beam,
The wafer stage control unit 92 controls the wafer stage driving unit 7
0, the target mark member 16 provided with a predetermined mark for adjusting the deflection amount provided on the wafer stage 62.
0 is moved to the vicinity of the optical axis A.

The deflector scans the mark for adjusting the amount of deflection of the target mark member 160 a plurality of times with an electron beam, and the electron detector 60 detects a change in the reflected electrons reflected from the target mark member 160 and controls the electron beam. Control unit 130
Notify. The overall control unit 130 can determine the edge of the mark based on the detection waveform of the backscattered electrons and determine the center position of the mark coordinates. By performing the above-described mark detection, calibration of the deflection coordinate system and the orthogonal coordinate system can be realized, and the deflector can irradiate a predetermined area on the wafer with an electron beam with high accuracy.

Next, the operation of each component when the electron beam exposure apparatus 100 performs an exposure process will be described. On the mask stage 72, a mask 30 having a plurality of blocks in which a predetermined pattern is formed is placed.
Is fixed at a predetermined position. Further, on the wafer stage 62, a wafer 64 to be subjected to exposure processing is mounted. The wafer stage control unit 92 moves the wafer stage 62 by the wafer stage driving unit 70,
The region to be exposed on the wafer 64 is positioned near the optical axis A. Further, since the electron gun 12 always emits an electron beam during the exposure processing period, the shot control unit 86 controls the shot control unit 86 so that the electron beam passing through the opening of the slit unit 16 is not irradiated onto the wafer 64 before the start of exposure. 1st blanking electrode 24 and 2nd blanking electrode 3
6 is controlled. In the mask projection system 112, the electron lens 20 and the deflectors (18, 22, 26)
4 is adjusted so that the block on which the pattern to be transferred is formed can be irradiated with the electron beam. Adjustable lens system 114
In, the electron lenses (28, 32) are adjusted so that the electron beam is focused on the wafer 64. In the wafer projection system 116, the electron lens (4
0, 46, 50, 52, 66) and deflectors (34, 3
8, 42, 56, and 58) are adjusted so that a pattern image can be transferred to a predetermined region of the wafer 64.

Mask projection system 112, adjustment lens system 114
After the adjustment of the wafer projection system 116, the shot control unit 86 stops the deflection of the electron beam by the first blanking electrode 24 and the second blanking electrode 36. This allows the electron beam to pass through the mask 30 as shown below.
Is irradiated on the wafer 64 via the. The electron gun 12 generates an electron beam, and the first electron lens 14 adjusts the focal position of the electron beam to irradiate the slit portion 16. Then, the first deflector 18 and the second deflector 22 are connected to the slit 1
The electron beam passing through the opening 6 is deflected so as to irradiate a predetermined area of the mask 30 on which a pattern to be transferred is formed. The electron beam that has passed through the opening of the slit portion 16 has a rectangular cross-sectional shape. The electron beam deflected by the first deflector 18 and the second deflector 22 is deflected by the third deflector 26 so as to be substantially parallel to the optical axis A. The electron beam is transmitted by the second electron lens 20.
It is adjusted so that an image of the opening of the slit portion 16 is formed in a predetermined area on the mask 30.

The electron beam passing through the pattern formed on the mask 30 is deflected by the fourth deflector 34 and the sixth deflector 42 in a direction approaching the optical axis A, and is deflected by the fifth deflector 38. It is deflected so as to be substantially parallel to A. Also, the electron beam is transmitted to the third electron lens 28 and the fourth electron lens 28.
The electron lens 32 adjusts the image of the pattern formed on the mask 30 so that it is focused on the surface of the wafer 64, the fifth electronic lens 40 adjusts the amount of rotation of the pattern image, and the sixth electronic lens 46 The reduction ratio of the pattern image is adjusted by the seven-electron lens 50. Then, the electron beam is deflected by the main deflector 56 and the sub deflector 58 so as to irradiate a predetermined shot area on the wafer 64. In the present embodiment, the main deflector 56 deflects the electron beam between subfields including a plurality of shot areas, and the sub deflector 58 deflects the electron beam between shot areas in the subfield. The electron beam deflected to a predetermined shot area is adjusted by the electron lens 52 and the electron lens 66 and irradiated on the wafer 64.
As a result, an image of the pattern formed on the mask 30 is transferred to a predetermined shot area on the wafer 64.

After a predetermined exposure time has elapsed, the shot control unit 86 controls the first blanking electrode 24 and the second blanking electrode 36 so that the electron beam does not irradiate the wafer 64, so that the electron beam is emitted. To deflect. By the above process, a predetermined shot area on the wafer 64
The pattern formed on the mask 30 is exposed. In order to expose the pattern formed on the mask 30 to the next shot area, in the mask projection system 112, the electron lens 20 and the deflectors (18, 22, 26)
Is adjusted so that a block having a pattern to be transferred to the surface can be irradiated with an electron beam. In the adjustment lens system 114 of the optical illumination system, the electron lenses (28, 32) are adjusted so that an optical illumination system that maximizes the beam current on the wafer 64 is established. Further, the wafer projection system 1
At 16, the electronic lens (40, 46, 50, 52,
66) and deflectors (34, 38, 42, 56, 58)
Is adjusted so that a pattern image can be transferred to a predetermined area of the wafer 64.

More specifically, the sub deflector 58 adjusts the electric field so that the pattern image generated by the mask projection system 112 is exposed to the next shot area. Thereafter, the pattern is exposed to the shot area as described above. After exposing the pattern to all the shot areas to be exposed in the subfield, the main deflector 56 adjusts the magnetic field so that the pattern can be exposed in the next subfield.
The electron beam exposure apparatus 100 can expose a desired circuit pattern to the wafer 64 by repeatedly performing this exposure processing.

FIG. 5 shows an embodiment of the target mark member 160 according to the present invention. The target mark member 160 is preferably used to adjust the deflection amount of the electron beam. In another example, target mark members 160 may be used to adjust the focusing of the electron beam. The target mark member 160 includes a gate electrode 212, a source electrode 218, and a drain electrode 22.
MOSF having oxide layer 214 and substrate 216
It has an ET structure. The oxide film layer 214 is formed on the gate electrode 21.
2 below. The base material 216 is a Si layer,
The oxide layer 214 may be a SiO ₂ layer. The gate electrode 212 is preferably formed of a heavy metal such as tantalum (Ta) or tungsten (W). The gate electrode 212 has a predetermined mark for adjusting the amount of deflection of the electron beam. As described above, at the time of adjusting (calibrating) the deflection amount of the electron optical system, the electron beam is applied to the region including the gate electrode 212 on which the mark is formed, and the electron detector 60 detects the scattered electrons. By
The deflection amount of the electron beam by the electron optical system including a plurality of deflectors is adjusted.

In the present embodiment, the gate electrode 212
Is applied with a predetermined voltage so that the central MOS structure is inverted to form a surface inversion layer (channel). For example, the voltage may be on the order of 10V. Further, it is preferable that a bias voltage be applied between the source electrode 218 and the drain electrode 220. In this embodiment, the source electrode 218 is supplied with a predetermined voltage, and the drain electrode 2
20 is grounded. By applying different source and drain voltages to the source electrode 218 and the drain electrode 220, an electric field can be generated between the source and the drain. In the present invention, the gate electrode 212, the source electrode 218, and the drain electrode 220 are formed so that the backscattered electrons are trapped in the channel and the trapped electrons are sent to the ground.
It is preferable that a voltage is applied to each.

FIG. 6 is an energy band diagram of the target mark member 160 according to one embodiment of the present invention. In this example, the gate electrode 212 is formed of tantalum (Ta). As shown, by applying a predetermined voltage to the gate electrode 212, an inversion layer (channel) is formed. The backscattered electrons that are injected into the target mark 160 and backscattered lose energy and are captured in this channel. In the conventional target mark member 200, the backscattered electrons are trapped at the trap level (surface level), and the target mark member 200 is charged by the trapped electrons. In the case, since the backscattered electrons are captured by the channel and set to the ground from the channel, the charge of the target mark member 160 itself can be prevented.

FIG. 7 is an explanatory diagram for explaining the behavior of electrons when the electrons are incident on the target mark member 160 according to the present invention. Target mark member 1
The spacing from the surface of the 60 to the channel is preferably on the order of tens of angstroms. For example, the spacing is preferably between 10 angstroms and 50 angstroms. Also, the target mark member 16
A predetermined bias voltage of about 10 V is applied to the zero surface.

As described with reference to FIG. 6, the backscattered electrons are
Captured by channel and grounded. In addition, secondary electrons are generated by the injection of electrons, but secondary electrons whose energy is lower than the bias voltage are not scattered from the surface of the target mark member 160. The electrons trapped in the channel are moved to ground by the electric field generated between the source and the drain. As a result, the accumulation of space charges on the surface of the target mark member 160 can be reduced, and mark detection in the electron beam exposure apparatus 100 can be performed with high accuracy. Calibration can be performed with high accuracy.

As apparent from the above description, according to the target mark member 160 of the present invention, the backscattered electrons are captured in the channel, the secondary electron emission from the surface is suppressed, and the backscattered electrons are allowed to flow to the ground, thereby reducing the target mark. It is possible to reduce charging of the member 160 itself. As described above, the target mark member 160
Although the case of having the SFET structure has been described, an FET having an internal channel, such as another MESFET, has been described.
It may have a structure. In other FET structures,
One of the source electrode and the drain electrode is preferably grounded, and a bias voltage is preferably applied between the source and the drain so that electrons captured by the channel are sent to the ground. Also, in an electron beam tester other than the electron beam exposure apparatus, such as an electron beam tester or an electron microscope, a target mark member having a channel inside is provided on a wafer stage on which a wafer to be processed is mounted. Is preferred.

Although the present invention has been described with reference to the embodiment, the technical scope of the present invention is not limited to the scope described in the above embodiment. It is apparent to those skilled in the art that various changes or improvements can be made to the above embodiment. It is apparent from the description of the appended claims that embodiments with such modifications or improvements are also included in the technical scope of the present invention.

[0041]

According to the present invention, it is possible to provide a target mark member capable of reducing a charge amount.

[Brief description of the drawings]

FIG. 1 shows a configuration of a conventional target mark member 200.

FIG. 2 shows an energy band diagram of a conventional target mark member 200.

3 is an explanatory diagram for explaining the behavior of electrons when the electrons are incident on a target mark member 200. FIG.

FIG. 4 is a configuration diagram of an electron beam exposure apparatus 100 according to one embodiment of the present invention.

FIG. 5 shows an embodiment of a target mark member 160 according to the present invention.

FIG. 6 is an energy band diagram of the target mark member 160 according to an embodiment of the present invention.

FIG. 7 shows a case where the electron is the target mark member 16 according to the present invention.
FIG. 5 is an explanatory diagram for explaining the behavior of electrons when the light is incident on zero.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... case, 12 ... electron gun, 14 ... 1st electron lens, 16 ... slit part, 18 ... 1st deflector, 20 ... 2nd electron lens, 22 ... ..The second deflector, 24 ... the first blanking deflector, 26 ... the third deflector, 28 ... the third electron lens, 30 ... the mask, 32 ... the fourth electron lens , 34: fourth deflector, 36: second blanking deflector, 38: fifth deflector, 40: fifth electron lens, 42: sixth
Deflector, 46: sixth electronic lens, 48: round aperture, 50: seventh electron lens, 52 ...
Eighth electron lens, 56: Main deflector, 58: Sub deflector, 60: Electron detector, 62: Wafer stage, 64: Wafer, 66: Ninth electron lens , 6
Reference numeral 8: mask stage drive unit, 70: wafer stage drive unit, 72: mask stage, 82: deflection control unit, 84: mask stage control unit, 86 ...
Shot control unit, 88 ... Electronic lens control unit, 90
... reflection electron processing unit, 92 ... wafer stage control unit, 100 ... electron beam exposure apparatus, 110 ... electron beam irradiation system, 112 ... mask projection system, 114
... Adjusting lens system, 116 ... Wafer projection system, 1
20: individual control unit, 130: general control unit, 14
0: control system, 150: exposure unit, 160: target mark member, 200: target mark member, 202: heavy metal layer, 204: insulating layer, 20
6 ... substrate layer, 212 ... gate electrode, 214 ...
-Oxide film layer, 216 ... base material, 218 ... source electrode 218, 220 ... drain electrode

Claims (9)

[Claims] 1. An electron beam processing apparatus, comprising: a target mark member used for adjusting an amount of deflection of an electron beam, wherein the target mark member is provided on a surface of the target mark member and is irradiated with a predetermined mark irradiated with the electron beam. A target mark member comprising: a formed gate electrode; and a source electrode and a drain electrode formed of a conductive material. 2. The target mark member according to claim 1, further comprising a channel for electrically connecting the source electrode and the drain electrode. 3. The target mark member according to claim 2, wherein the gate electrode is formed of a heavy metal material. 4. When the irradiated electrons are trapped in the channel when the drain electrode is grounded to ground and a predetermined bias voltage is applied between the source electrode and the drain electrode, the trapped electrons are trapped. Electron
The target mark member according to claim 3, which is sent to a ground. 5. The target mark member according to claim 1, further comprising an oxide film layer formed below the gate electrode, wherein the target mark member has a MOSFET structure. 6. A wafer stage for mounting a wafer to be processed in an electron beam processing apparatus, comprising: a gate electrode on which a predetermined mark to be irradiated with an electron beam is formed; and a source formed by a conductive material. A wafer stage, comprising: a target mark member having an electrode and a drain electrode and used for adjusting a deflection amount of an electron beam. 7. The wafer stage according to claim 6, wherein the target mark member has a channel for electrically connecting the source electrode and the drain electrode. 8. An electron beam exposure apparatus for exposing a wafer with an electron beam, comprising: an electron gun for generating an electron beam; a deflector for deflecting the electron beam with respect to a predetermined region of the wafer; A wafer stage on which a wafer is mounted, the wafer stage having a gate electrode formed with a predetermined mark irradiated with an electron beam, and a source electrode and a drain electrode formed of a conductive material, An electron beam exposure apparatus comprising a target mark member used to adjust the amount of deflection of the electron beam by a deflector. 9. The electron beam exposure apparatus according to claim 8, wherein the target mark member has a channel for electrically connecting the source electrode and the drain electrode.