JP2001304454A - Semiconductor micro-valve - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor micro-valve of normally open type capable of securing accurately the gap between the micro-valve base part and a valve element through a simple procedure without any complicated process which requires accuracy. SOLUTION: The semiconductor micro-valve 60 of normally open type is formed by joining together a second base board 50 having a through hole 51 in a specified position, valve element 5 to open and close the hole 51 formed from a silicon substrate and a first base substrate 1 to make displacement with changing temperature and form a flexible region 2 to displace the valve element and a frame part 3 supporting the flexible region 2, wherein the first substrate 1 and second substrate 50 are joined together through a spacer layer 53 of 10-30 μm thick.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microvalve used for fluid control, and more particularly, to a second substrate having a through hole at a predetermined position and a valve for processing a silicon substrate to open and close the through hole. The present invention relates to a semiconductor microvalve formed by joining a body and a first substrate forming a flexible region for displacing the valve body.

[0002]

2. Description of the Related Art In recent years, a semiconductor microvalve using a technique used for manufacturing a semiconductor chip has been developed (for example, Japanese Patent Laid-Open No. 5-187574). The inventors have developed a microvalve as shown in FIG. 4 for the purpose of improving thermal insulation performance against heat generated by a heating means in such a semiconductor microvalve and improving control accuracy of fluid. . The microvalve 60 shown in FIG. 4 includes a second substrate 50 having a through hole 51, a valve body 5 which is formed by processing a silicon substrate and opens and closes the through hole 51, This is a structure in which the first substrate 1 forming the flexible region 2 for displacing the first region and the frame portion 3 supporting the flexible region 2 is joined.

The first substrate 1 is a substrate that functions as an actuator, and has a frame portion 3 formed by processing a silicon substrate, a flexible region 2, and a movable portion 8. The four flexible regions 2 supported by the frame 3 are arranged so as to form a cross shape with the central movable portion 8 interposed therebetween.

[0004] The movable part 8 has a square opening on the upper surface,
It is formed in the shape of a hollow truncated pyramid whose width becomes narrower as it goes downward, and is provided with a valve element 5 at the position of its bottom surface. The rectangular piece-shaped flexible region 2 extending outward from each of the four sides of the opening on the upper surface of the movable portion 8 having a hollow truncated pyramid shape has a structure in which the end is supported by the frame portion 3. I have. A region surrounded by the adjacent flexible regions 2 and 2 and the frame 3 is hollow so as to be a fluid flow path. The thin silicon portion 2S constituting the flexible region 2 is provided with a heating means 6 composed of an impurity diffusion resistance or the like.
A thin film 2M having a different coefficient of thermal expansion from silicon is provided. Further, a heat insulating region 7 is formed between the frame portion 3 and the flexible region 2 and serves to insulate heat generated by the heating means 6. Note that the heat insulating region 7 can be formed between the flexible region 2 and the movable portion 8 as well as between the frame portion 3 and the flexible region 2.

On the other hand, a second substrate 50 made of a glass substrate or the like is provided with a through-hole 51 serving as a fluid flow passage at a position corresponding to the valve element 5 of the first substrate 1. A base 52 projecting from the periphery and having a flat upper surface is formed so as to surround the base. Then, the first substrate 1 and the second substrate 1
The substrate 50 is joined at the joint surface 19 using a method such as anodic bonding.

In the semiconductor microvalve 60 having the above structure, when a current flows through the heating means 6 provided in the flexible region 2 and the flexible region 2 is heated, the thermal expansion of the thin film 2M and the silicon thin portion 2S occurs. The flexible region 2 bends due to the difference in the coefficient, and the valve element 5 provided in the movable portion 8 is displaced. The displacement of the valve element 5 changes the gap between the lower surface of the valve element 5 and the base 52 of the second substrate 50, and controls the flow rate of the fluid flowing through the through-hole 51.

FIG. 5 (end view) schematically shows an end face of a cut portion of the microvalve 60 shown in FIG. 4 (a partially cutaway perspective view). In the normally open micro valve 60 shown in FIG. 5, in order to secure the gap 16 between the lower surface of the valve body 5 of the first substrate 1 and the base 52 of the second substrate 50,
The silicon substrate is processed into the first substrate 1 such that the lower surface of the valve element 5 is located at a position higher by the height of the gap 16 than the position of the joint surface 19 between the second substrate 50 and the first substrate 1.

FIGS. 6A and 6B show an example of a manufacturing process for manufacturing the normally open type micro valve 60 shown in FIGS.
A description will be given based on a schematic cross-sectional view showing the manufacturing process of FIG.

First, a silicon oxide film 80a is formed on both surfaces of a single crystal silicon substrate 80 by thermal oxidation or the like, and the silicon formed on the back surface of the single crystal silicon substrate 80 using a photoresist patterned in a predetermined shape as a mask. The opening 80b is formed by etching the oxide film 80a, and then the photoresist is removed by plasma ashing or the like. Next, the formed opening 80
b is etched with a potassium hydroxide aqueous solution (hereinafter referred to as a KOH aqueous solution) or the like to dig into a depth corresponding to the height of the gap 16 to form a digging surface 80c (FIG. 6 (a)).

Next, the entire surface of the silicon oxide film 80a is removed with buffered hydrofluoric acid or the like. Subsequently, boron or the like is deposited, and then thermal diffusion is performed to form a diffusion resistor 6 a serving as the heating unit 6. Next, the single crystal silicon substrate 80
A silicon oxide film 81b is formed on both surfaces by thermal oxidation or the like, and then a silicon nitride film 81a is formed by low pressure CVD.
Is formed (FIG. 6B).

Next, using the photoresist patterned in a predetermined shape as a mask, the silicon nitride film 81a and the silicon oxide film 81b are etched to form the opening 8
Then, the photoresist is removed by plasma ashing or the like (FIG. 6C).

Next, the silicon at the position of the opening 82 is etched from both sides of the single crystal silicon substrate 80 with a KOH aqueous solution or the like, so that the movable portion 8 having the valve element 5 and the silicon thin wall forming the flexible region 2 are formed. The part 2S is formed. As a method of obtaining a desired valve body thickness and a silicon thin portion thickness, there is a method in which etching is started from both sides with a time difference.
Then, separately, single crystal silicon substrate 80 is etched to form grooves 83a, 83b for forming heat insulating region 7.
Is formed (FIG. 6D). These grooves 83a and 83b are
It is for embedding an organic material such as polyimide in a later step, and has a non-penetrating groove having a silicon portion with a thickness of about 10 μm at the bottom. Here, the description will be given with respect to a manufacturing process in the case where the heat insulating region 7 is formed between the flexible region 2 and the movable portion 8 as well as between the frame portion 3 and the flexible region 2. The grooves 83a, 83b
Are formed in two places.

Next, the substrate surface etched to form the movable portion 8 and the silicon thin portion 2S is oxidized,
A protective film 84 for plating the substrate is formed (FIG. 6).
(E)).

Next, an aluminum film is formed on the upper surface of the single crystal silicon substrate 80 by sputtering or EB evaporation to form a wiring 13a (aluminum wiring) connected to the diffusion resistor 6a (FIG. 7A). Note that this wiring 13a
Is formed on the heat insulating region 7 as shown in FIG. 4, the wiring 13a is formed after the step of forming the heat insulating region 7.

Next, an organic material 85 such as polyimide is buried in the grooves 83a and 83b (FIG. 7B).

Next, a metal pattern of a predetermined shape is formed by plating or the like on the silicon nitride film 81 on the silicon thin portion 2S.
a, a thin film 2M such as an aluminum thin film or a nickel thin film having a different thermal expansion coefficient from silicon is formed. The thin film 2M may be formed by sputtering or the like (FIG. 7C).

Next, the silicon portion having a thickness of about 10 μm remaining at the bottom of the grooves 83a and 83b is removed by RIE or the like from the back side of the silicon thin portion 2S (the side opposite to the surface on which the thin film 2M is formed). Then, the first substrate 1 is obtained in a state where the silicon thin portion 2S is thermally insulated from the frame portion 3 and the movable portion 8 by the heat insulating regions 7a and 7b (FIG. 7).
(D)).

Next, a second substrate 50 made of glass formed in a predetermined shape and a first substrate 50 formed by the above-described steps are formed.
The semiconductor microvalve 60 shown in FIG. 4 can be manufactured by bonding the substrate 1 by anodic bonding or the like.

[0019]

However, in the normally open microvalve 60 shown in FIGS. 4 and 5 described above, at the beginning of the manufacturing process, the microvalve 60 shown in FIG.
As shown in FIG. 5A, the back surface of the single-crystal silicon substrate 80 is etched, and digging is performed to a depth corresponding to the height of the gap 16 shown in FIG. There is a problem that a required complicated process is required. In addition, if there is this digging, it is difficult to transport the single-crystal silicon substrate 80 in a subsequent process (for example, it is difficult to perform suction work in the photolithography process shown in FIG. Problem).

The present invention has been made to solve the above problems, and an object of the present invention is to secure a gap between a valve body and a base in a normally open micro valve with high accuracy. However, it is an object of the present invention to provide a normally open type semiconductor microvalve which can be achieved with simple steps without going through complicated steps requiring high precision.

[0021]

According to a first aspect of the present invention, there is provided a semiconductor microvalve comprising a second substrate having a through hole at a predetermined position, a valve body for processing a silicon substrate and opening and closing the through hole. A semiconductor microvalve formed by joining a flexible region displaced by a temperature change to displace the valve body and a first substrate forming a frame supporting the flexible region; The semiconductor microvalve is characterized in that the valve is a normally open type, and the first substrate and the second substrate are joined via a spacer layer having a thickness of 10 μm to 30 μm.

In the semiconductor microvalve according to the first aspect of the present invention, since the first substrate and the second substrate are joined via the spacer layer having a thickness of 10 μm to 30 μm, the normally open valve element is used. It is possible to secure a gap between the base and the base with high accuracy by a simple process of forming a spacer layer without going through a complicated process requiring high accuracy. Further, in the state of a silicon substrate having a flat back surface (the surface on the side to be a bonding surface with the second substrate) in which no digging for securing a gap is formed, a valve body and a silicon thin portion are formed. In the photolithography process, the silicon substrate serving as the first substrate can be easily handled during transportation and the like, and the processing accuracy of the photolithography can be improved. In the present invention, if the thickness of the spacer layer is less than 10 μm, the gap between the valve body and the base is too narrow to secure a desired flow rate, and if it exceeds 30 μm, the through hole ( The thickness of the spacer layer is limited to a range of 10 μm to 30 μm because the closure of the hole serving as the orifice becomes insufficient and the function as a microvalve deteriorates.

According to a second aspect of the present invention, in the semiconductor microvalve according to the first aspect, the spacer layer is made of polyimide.

In the semiconductor microvalve according to the second aspect of the present invention, since the spacer layer is made of polyimide,
Even if there is a difference between the coefficient of thermal expansion of the first substrate and the coefficient of thermal expansion of the second substrate, the stress caused by the difference is relieved by the spacer layer. The second substrate is prevented from being deteriorated by the stress due to the difference in the coefficient of thermal expansion. Further, it is also possible to make the thermal expansion coefficient of the first substrate equal to that of the second substrate by setting the material of the second substrate to the same silicon as that of the first substrate. If the stress is not relieved by the spacer layer, the stress concentrates on the flexible region, a sufficient displacement of the flexible region cannot be obtained, and the driving property of the valve body deteriorates.

According to a third aspect of the present invention, there is provided the semiconductor microvalve according to the first aspect, wherein the spacer layer is made of a glass thin film.

In the semiconductor microvalve according to the third aspect of the present invention, since the spacer layer is formed of a glass thin film,
The material of the second substrate is the same silicon as the first substrate,
The thermal expansion coefficients of the substrate and the second substrate can be matched. In the case where such a spacer layer does not exist, there is a problem that it is difficult to bond the silicon substrates.

According to a fourth aspect of the present invention, in the semiconductor microvalve, the flexible region includes a heat generating means, and a heat insulating region for insulating heat from the heat generating device is provided between the flexible region and the flexible region. The semiconductor microvalve according to any one of claims 1 to 3, wherein the semiconductor microvalve is formed between the supporting microframe and the supporting frame.

In the semiconductor microvalve according to the fourth aspect of the present invention, since the heat insulating region is formed between the flexible region and the frame supporting the flexible region, power consumption can be suppressed. Becomes

[0029]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a partially broken perspective view showing the structure of an embodiment corresponding to the first to fourth aspects of the present invention.

The micro-valve 60 shown in FIG. 1 has a second substrate 50 having a through hole 51, a valve body 5 for processing a silicon substrate to open and close the through hole 51, The flexible region 2 for displacing the valve element 5 and the first substrate 1 forming the frame 3 supporting the flexible region 2 are joined via a spacer layer 53 having a thickness of 10 μm to 30 μm. Structure.

FIG. 2 (end view) schematically shows an end face of a cut portion of the semiconductor microvalve 60 shown in FIG. 1 (a partially cutaway perspective view). In the normally open semiconductor microvalve 60 shown in FIG. 2, the gap 16 corresponds to the gap 16 between the lower surface of the valve body 5 of the first substrate 1 and the base 52 of the second substrate 50. A spacer layer 53 having a desired thickness is disposed between the first substrate 1 and the second substrate 50.

Therefore, in this embodiment, the gap 16 between the valve element 5 and the base 52 in the normally open type can be ensured with high accuracy without the need for complicated steps requiring high accuracy and the spacer layer. 53 can be achieved by a simple step of formation. Further, in the state of a silicon substrate having a flat back surface (the surface on the side to be a bonding surface with the second substrate) in which no digging for securing the gap 16 is formed, formation of a valve element, a silicon thin portion, or the like is performed. For the photolithography process for
Handling of the silicon substrate during transportation and the like becomes easy, and the processing accuracy of photolithography can be improved. If the thickness of the spacer layer 53 is less than 10 μm, the gap between the valve body 5 and the base 52 is too narrow to secure a desired flow rate. The thickness of the spacer layer 53 is limited to the range of 10 μm to 30 μm, since the closing of the hole 51 (hole serving as a flow path) becomes insufficient and the function as a microvalve deteriorates.

When the spacer layer 53 is made of polyimide, even if there is a difference between the coefficient of thermal expansion of the first substrate 1 and the coefficient of thermal expansion of the second substrate 50, stress caused by the difference is relieved by the spacer layer 53. , Semiconductor microvalve valve element 5
Of the first substrate 1 and the second substrate 50 is prevented from being deteriorated by stress due to a difference in the coefficient of thermal expansion between the first substrate 1 and the second substrate 50. Also, the second
When the material of the substrate 50 is the same as that of the first substrate 1, the first substrate 1 and the second substrate 50 can have the same coefficient of thermal expansion. In addition, the first substrate 1 and the second
If the stress due to the difference in the coefficient of thermal expansion of the substrate 50 is not reduced, the stress concentrates on the flexible region 2 shown in FIG. 1 and sufficient displacement of the flexible region 2 cannot be obtained. Gets worse.

When the spacer layer 53 is made of a glass thin film, the material of the second substrate 50 can be made of the same silicon as that of the first substrate 1 so that the first substrate 1 and the second substrate 50 have the same coefficient of thermal expansion. Becomes When such a spacer layer does not exist, there is a problem that it is difficult to bond the silicon substrates.

In the semiconductor microvalve 60 of the embodiment shown in FIG. 1, the flexible region 2 is provided with a heat generating means 6 made of a diffusion resistance or the like, and a heat insulating area 7a for insulating heat from the heat generating means 6; 7b are formed between the flexible region 2 and the frame 3 supporting the flexible region 2 and between the flexible region 2 and the movable portion 8. Therefore, the dissipation of heat from the heat generating means 6 is prevented, so that power consumption can be suppressed.

Next, the manufacturing process of the embodiment shown in FIGS. 1 and 2 will be described with reference to FIG.

As shown in FIG. 3A, boron or the like is deposited on a single-crystal silicon substrate 80 having flat surfaces on both sides, and then thermal diffusion is performed to form a diffusion resistor 6a serving as the heating means 6. Next, a silicon oxide film 81b is formed on both surfaces of the single crystal silicon substrate 80 by thermal oxidation or the like,
Subsequently, a silicon nitride film 81a is formed by low pressure CVD. As described above, in this embodiment, the back surface of the silicon substrate (the surface that is to be the bonding surface with the second substrate) as shown in FIG. The step of forming the digging surface 80c by digging the depth is unnecessary.

Next, using the photoresist patterned in a predetermined shape as a mask, the silicon nitride film 81a and the silicon oxide film 81b are etched to form the opening 8
Then, the photoresist is removed by plasma ashing or the like (FIG. 3B). In this photolithography step, the back surface of the single crystal silicon substrate 80 (the surface on the side to be the bonding surface with the second substrate) is in a flat state, so that the single crystal silicon substrate 80 can be easily handled during transportation and the like, and Processing accuracy of the opening 82 by photolithography can be improved.

Next, the silicon at the position of the opening 82 is etched from both surfaces of the single-crystal silicon substrate 80 with a KOH aqueous solution or the like, so that the movable portion 8 having the valve element 5 and the silicon thin wall forming the flexible region 2 are formed. The part 2S is formed. As a method of obtaining a desired valve body thickness and a silicon thin portion thickness, there is a method in which etching is started from both sides with a time difference.
Separately, the single crystal silicon substrate 80 is etched to form grooves 83a and 83b for forming the heat insulating region 7 (FIG. 3C). These grooves 83a and 83b are for embedding an organic material such as polyimide in a later step, and are formed as non-penetrating grooves having a silicon portion having a thickness of about 10 μm at the bottom thereof. Note that, in this description, the heat insulating region 7 is located between the frame 3 and the flexible region 2 (7
a), the manufacturing process in the case where it is also formed between the flexible region 2 and the movable portion 8 (7b) is described.
The grooves 83a and 83b are formed on both sides of the flexible region 2.

The following steps are described in FIG.
Since processing is performed in the same steps as those shown in FIG. 7E and FIGS. 7A to 7D, the description will be omitted while omitting the drawings. FIG.
With respect to the single crystal silicon substrate 80 shown in (c), the substrate surface etched to form the movable portion 8 and the silicon thin portion 2S is oxidized to form a protective film 84 when plating the substrate ( 6 (e).

Next, an aluminum film is formed on the upper surface of the single crystal silicon substrate 80 by sputtering or EB evaporation to form a wiring 13a (aluminum wiring) connected to the diffusion resistor 6a (similar to FIG. 7A). Process). When the wiring 13a is formed on the heat insulating region 7a as shown in FIG. 1, the wiring 13a is formed after the step of forming the heat insulating region 7a.

Next, an organic material 85 such as polyimide is buried in the grooves 83a and 83b (steps similar to those in FIG. 7B).

Next, a metal pattern of a predetermined shape is formed by plating or the like on the silicon nitride film 81 on the silicon thin portion 2S.
a, a thin film 2M such as an aluminum thin film or a nickel thin film having a different thermal expansion coefficient from silicon is formed. The thin film 2M may be formed by film formation by sputtering or the like (the same process as in FIG. 7C).

Next, the silicon thin portion 2S is etched by RIE or the like from the back side (the side opposite to the surface on which the thin film 2M is formed) to remove the silicon portion having a thickness of about 10 μm remaining at the bottom of the grooves 83a and 83b. Then, the first substrate 1 is obtained in a state where the silicon thin portion 2S is thermally insulated from the frame portion 3 and the movable portion 8 by the heat insulating regions 7a and 7b (FIG. 7).
(Step similar to (d)).

Next, the second substrate 50 formed in a predetermined shape
And the first substrate 1 formed by the above-described steps are joined via a spacer layer 53 to manufacture the semiconductor microvalve 60 shown in FIG. As for the material of the second substrate 50, glass can be used, but the spacer layer 5
3 is made of polyimide or glass thin film,
Silicon of the same material as the substrate 1 may be used.

In the case where the spacer layer 53 is made of polyimide, a polyimide layer is formed at least at a position to be a joining region on either the first substrate 1 or the second substrate 50 by a method such as coating or vapor deposition. , Superimpose both substrates, 4
It can be joined by pressing at a temperature of about 00 ° C. When the spacer layer 53 is made of a glass thin film,
After forming a glass thin film at a position to be a bonding region of at least one of the first substrate 1 and the second substrate 50 to a predetermined thickness by, for example, a method such as sputtering or application of liquefied glass, the two substrates are overlapped. Together, they can be joined using an anodic joining method. As a method of forming a glass thin film in a predetermined region by sputtering, a portion where the glass thin film is not formed is protected with a resist or the like,
A method in which a glass thin film of a desired thickness is formed only in a predetermined area, and then a method of removing and forming a resist used for protection, or a method in which a sputtered glass thin film is formed on the entire surface and a predetermined forming area is formed with a resist or the like Protect the glass thin film in the non-forming region by etching with a solution such as hydrofluoric acid (HF) or R
A method of removing and forming by dry etching by IE (reactive ion etching) can be exemplified. As a method of forming a glass thin film in a predetermined region with liquefied glass, a film is formed by coating or the like, and then through a vitrification process of the film by heat treatment, the predetermined formation region is protected with a resist or the like, and the glass in the non-formation region is A method of forming a thin film by removing it by etching with a solution such as hydrofluoric acid (HF) or dry etching by RIE (reactive ion etching) can be given.

[0048]

According to the semiconductor microvalve according to the first to fourth aspects of the present invention, it is necessary to accurately maintain the gap between the valve body and the base in a normally open type, and it is a complicated process that requires high precision. This can be achieved by simple steps without going through any steps. Therefore, the semiconductor microvalve of the invention according to claims 1 to 4 can be manufactured by a simple process,
In addition, a normally open semiconductor microvalve with high performance is obtained.

In the semiconductor microvalve according to the second aspect of the present invention, in addition to the above-described effects, since the spacer layer is made of polyimide, there is a difference between the coefficient of thermal expansion of the first substrate and the coefficient of thermal expansion of the second substrate. Even if there is, the effect of reducing the stress due to the difference by the spacer layer and improving the driveability of the valve element of the semiconductor microvalve is exhibited. Further, the material of the second substrate is made of the same silicon as the first substrate, and the first substrate and the second substrate are made of silicon.
This also has the effect of making it possible to match the thermal expansion coefficients of the substrates.

The semiconductor microvalve according to the third aspect of the present invention has the effect of being a normally open semiconductor microvalve which can be manufactured by a simple process and has a high performance. Since the second substrate is made of the same silicon as the first substrate, the first substrate and the second substrate can have the same coefficient of thermal expansion.

The semiconductor microvalve according to the fourth aspect of the present invention has the effect of being a normally open semiconductor microvalve that can be manufactured by a simple process and has high performance. Since the heat insulating region is formed between the flexible region and the frame supporting the flexible region, the effect of reducing power consumption can be achieved.

[Brief description of the drawings]

FIG. 1 is a partially cutaway perspective view illustrating a configuration of a semiconductor microvalve according to an embodiment of the present invention.

FIG. 2 is an end view of a fracture surface of the above.

3A to 3C are cross-sectional views illustrating a manufacturing process of the semiconductor microvalve according to the embodiment of the present invention.

FIG. 4 is a partially cutaway perspective view for explaining a configuration of a semiconductor microvalve in a conventional technique.

FIG. 5 is an end view of the fracture surface of the above.

FIGS. 6A to 6E are cross-sectional views illustrating a manufacturing process of a semiconductor microvalve according to the related art, in which FIGS.

FIGS. 7A to 7D are cross-sectional views illustrating a manufacturing process of a semiconductor microvalve according to a conventional technique, in which FIGS.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st board | substrate 2 Flexible area | region 2S Silicon thin part 2M thin film 3 Frame part 5 Valve body 6 Heating means 6a Diffusion resistance 7, 7a, 7b Heat insulation area 8 Movable part 13a Wiring 16 Gap 19 Joining surface 50 Second substrate 51 Penetration Hole 52 Base 53 Spacer layer 80 Single crystal silicon substrate 80a Silicon oxide film 81a Silicon nitride film 81b Silicon oxide film 82 Openings 83a, 83b Groove 84 Protective film 85 Organic material

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Hiroshi Kawada 1048 Kadoma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Works, Ltd. (72) Inventor Masayu Kamakura 1048 Kadoma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Works, Ltd. (72) Inventor Kazushi Yoshida 1048 Kadoma Kadoma, Osaka Prefecture Inside Matsushita Electric Works Co., Ltd. (72) Inventor Hironori Katayama 1048 Odaka Kazuma Kadoma City, Osaka Prefecture Inside Matsushita Electric Works Co., Ltd. (72) Inventor Kimiaki Saito No. 1048 Kadoma Kadoma, Kadoma City, Osaka Prefecture (72) Keiko Kawato, Inventor Keiko Kawato 1048 Kadoma Kadoma, Kadoma City, Osaka Prefecture, Japan (72) Kenji Toyoda 1048 Kadoma Kadoma, Kadoma, Osaka Prefecture Address Matsushita Electric Works Co., Ltd. F term (reference) 3H057 AA05 BB38 CC04 DD11 DD21 EE10 FB05 FC04 HH07 HH11 3H062 AA02 AA12 BB30 BB31 CC04 CC29 DD03 FF21 HH01 HH06 HH10 3H066 AA01 BA17 BA18 BA36 5H307 AA20 BB01 EE04 EE19 EE36

Claims (4)

[Claims] 1. A second substrate having a through hole at a predetermined position, a valve body for processing a silicon substrate to open and close the through hole, and a flexible region for displacing the valve body by being displaced by a temperature change. And a first substrate forming a frame portion supporting the flexible region, wherein the semiconductor microvalve is a normally open type, and the first substrate and the first substrate are connected to each other. A semiconductor microvalve, wherein the semiconductor microvalve is bonded to a second substrate via a spacer layer having a thickness of 10 μm to 30 μm. 2. The semiconductor microvalve according to claim 1, wherein said spacer layer is made of polyimide. 3. The semiconductor microvalve according to claim 1, wherein said spacer layer is made of a glass thin film. 4. The flexible region includes a heat generating means, and a heat insulating region for insulating heat from the heat generating means is formed between the flexible region and a frame supporting the flexible region. The semiconductor microvalve according to any one of claims 1 to 3, wherein: