JP2001298343A - Transversal surface acoustic wave filter - Google Patents

Transversal surface acoustic wave filter

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Publication number
JP2001298343A
JP2001298343A JP2000114366A JP2000114366A JP2001298343A JP 2001298343 A JP2001298343 A JP 2001298343A JP 2000114366 A JP2000114366 A JP 2000114366A JP 2000114366 A JP2000114366 A JP 2000114366A JP 2001298343 A JP2001298343 A JP 2001298343A
Authority
JP
Japan
Prior art keywords
electrode
filter
transversal
acoustic wave
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000114366A
Other languages
Japanese (ja)
Other versions
JP3451234B2 (en
Inventor
Kunihito Yamanaka
国人 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP2000114366A priority Critical patent/JP3451234B2/en
Publication of JP2001298343A publication Critical patent/JP2001298343A/en
Application granted granted Critical
Publication of JP3451234B2 publication Critical patent/JP3451234B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a means for flattening the intra-band characteristics of a transversal surface acoustic wave(SAW) filter. SOLUTION: In the traversal SAW filter in which two IDT electrodes are located on a piezoelectric substrate at a prescribed interval, one of IDT electrodes is formed by using the basic block of an electrode cycle λR having a reflecting function and the basic block of an electrode cycle λS having no reflecting function and the electrode cycles λR and λS are made different from each other.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はトランスバーサル弾
性表面波フィルタ(以下、トランスバーサルSAWフィ
ルタと称す)に関し、特に通過帯域内のリップルを改善
したトランスバーサルSAWフィルタに関する。
The present invention relates to a transversal surface acoustic wave filter (hereinafter, referred to as a transversal SAW filter), and more particularly to a transversal SAW filter with improved ripple in a pass band.

【0002】[0002]

【従来の技術】近年、弾性表面波フィルタ(以下、SA
Wフィルタと称す)は通信分野で広く利用され、高性
能、小型、量産性等の優れた特徴を有することから特に
携帯電話等に多く用いられている。最近の予想を越える
携帯電話の普及と画像を含む高速データ通信の要請等に
より、従来のPDC、AMPS方式等のように、狭帯域
のキャリア周波数間隔を用いる方式から広帯域で高速大
容量に適したCDMA方式が普及し始めている。CDM
A方式端末機に用いられるIF回路には、高速データを
伝送するため広帯域のフィルタが必要であると共に、隣
接のキャリアを阻止するために減衰傾度の急峻な特性も
合わせて要求される。さらに、高速なデジタルデータの
品質を保持するために、IFフィルタには平坦な遅延時
間特性も要求される。このような要求を満たすフィルタ
として、振幅特性と位相特性とを互いに別個に設計可能
なトランスバーサルSAWフィルタが適している。
2. Description of the Related Art Recently, a surface acoustic wave filter (hereinafter referred to as SA) has been developed.
W filters) are widely used in the field of communications and have excellent characteristics such as high performance, small size, and mass productivity, and are therefore particularly frequently used in mobile phones and the like. Due to the spread of mobile phones, which exceeds expectations in recent years, and the demand for high-speed data communication including images, the system using narrow carrier frequency intervals, such as the conventional PDC and AMPS systems, is suitable for high-speed, large-capacity, wide-band. The CDMA system has begun to spread. CDM
An IF circuit used in an A-type terminal needs a wide-band filter for transmitting high-speed data, and also requires a steep attenuation gradient characteristic to block adjacent carriers. Further, in order to maintain high-speed digital data quality, the IF filter is required to have a flat delay time characteristic. A transversal SAW filter that can design the amplitude characteristic and the phase characteristic separately from each other is suitable as a filter satisfying such requirements.

【0003】図4は従来のトランスバーサルSAWフィ
ルタの構成を示す平面図であって、圧電基板21の主面
上に表面波の伝搬方向に沿ってIDT電極22と、所定
の間隔を空けてIDT電極23を配置して構成する。I
DT電極22、23はそれぞれ互いに間挿し合う複数の
電極指を有する一対のくし形電極から構成し、IDT電
極22の一方のくし形電極は入力端子INに接続すると共
に、他方のくし形電極は接地する。さらに、IDT電極
23の一方のくし形電極は出力端子OUTに接続すると共
に、他方のくし形電極は接地してトランスバーサルSA
Wフィルタを構成する。なお、圧電基板の両端には端面
からの反射波を吸収するための吸音材24を付着してい
る。
FIG. 4 is a plan view showing the structure of a conventional transversal SAW filter. The IDT electrode 22 is arranged on a main surface of a piezoelectric substrate 21 along a propagation direction of a surface wave at a predetermined interval. The electrode 23 is arranged and configured. I
Each of the DT electrodes 22 and 23 is composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interposed between each other. One of the IDT electrodes 22 is connected to the input terminal IN, and the other of the IDT electrodes 22 is connected to the input terminal IN. Ground. Further, one comb-shaped electrode of the IDT electrode 23 is connected to the output terminal OUT, and the other comb-shaped electrode is grounded and connected to the transversal SA.
Construct a W filter. Note that sound absorbing members 24 for absorbing the reflected waves from the end surfaces are attached to both ends of the piezoelectric substrate.

【0004】図4に示すように、IDT電極22、23
に正規型IDT電極を用いた場合、トランスバーサルS
AWフィルタの伝送特性は、周知のように、通過帯域幅
BはB=0.88/N(Nは電極指対数)で、その中心
周波数を頂点とする丸みを帯びた特性となり、サイドロ
ーブの抑圧レベルは26dBとなる。正規型IDT電極
特有の丸みのある通過域特性をより平坦化する手法とし
て、IDT電極22、23のいずれかに重み付けする方
法、即ち表面波の励振強度が伝搬方向の位置の関数とな
るように重み付けを行う手法がある。重み付け法は大別
して、IDT電極の交差長Wを変化させて重み付けをす
る方法(アポダイズ法)と、交差長Wは一定とし励振強
度を変えることによる重み付け法の2つの手法がある。
アポダイズ法の特徴は比較的容易に正確な重み付けがで
きるが、交差長Wの小さな部分で回折損が大きくなり、
挿入損失が劣化するという欠点がある。一方、励振強度
を変える手法の1つに電極間引き法があり、アポダイズ
法の長所、短所と逆の関係になる。
As shown in FIG. 4, IDT electrodes 22, 23
When a regular IDT electrode is used, the transversal S
As is well known, the transmission characteristics of the AW filter are such that the pass bandwidth B is B = 0.88 / N (N is the number of pairs of electrode fingers), the characteristics are rounded with the center frequency at the top, and the side lobes The suppression level is 26 dB. As a method of flattening the rounded passband characteristic peculiar to the normal type IDT electrode, a method of weighting one of the IDT electrodes 22 and 23, that is, such that the excitation intensity of the surface wave becomes a function of the position in the propagation direction. There is a method of performing weighting. The weighting method is roughly classified into two methods: a method in which the crossing length W of the IDT electrode is changed to perform weighting (apodizing method), and a weighting method in which the crossing length W is fixed and the excitation intensity is changed.
The feature of the apodization method is that it is relatively easy to perform accurate weighting, but the diffraction loss increases at a small portion of the intersection length W,
There is a disadvantage that the insertion loss is deteriorated. On the other hand, one of the techniques for changing the excitation intensity is an electrode thinning method, which has the opposite relationship to the advantages and disadvantages of the apodization method.

【0005】電極間引き法は、周知のように、アポダイ
ズ法で設計したIDT電極のメインローブの交差長の最
長のもので基準化し、電極指の配列を密あるいは粗に変
換する。実際のIDT電極構成では、例えば、電極指が
存在する位置には励振可能なIDT電極を配置し、電極
指が存在しない位置には、励振作用のない電極を配設す
ることによって実現している。
In the electrode thinning method, as is well known, the IDT electrode designed by the apodization method is standardized by the longest intersecting length of the main lobe, and the arrangement of the electrode fingers is converted densely or roughly. In an actual IDT electrode configuration, for example, this is realized by arranging an excitable IDT electrode at a position where an electrode finger is present, and arranging an electrode without excitation at a position where no electrode finger is present. .

【0006】ここで励振可能なIDT電極と励振作用の
ないIDT電極について、数例を挙げて説明すると、図
5(a)に示したIDT電極の基本区間は3λ/8幅の
電極指と、2つのλ/8幅の電極指とから構成された一
方向性トランスデューサ(EWC-SPUDT)であり、図中矢
印方向(順方向)への反射作用を有する。尚、λは1波
長に相当し、基本区間とは1波長分のIDT電極構成の
ことを云う。図5(b)に示すIDT電極構成の基本区
間は励振作用を有するものの、一方向性のないタイプで
ある。図5(c)に示す構成の基本区間のIDT電極は
励振作用を有しないが、図の矢印方向への反射作用を有
する。また、図5(d)はλ/8の電極が同じ極性の電
極にのみ接続された構造であり、励振、反射の作用とも
有しない。図5(e)の基本区間のIDT電極は同図
(a)の電極と対称であり、励振作用と図中矢印方向
(逆方向)への一方向性を有する。また、同図(f)に
示す構成の 基本区間のIDT電極は、励振作用は有し
ないが矢印方向への一方向性(逆方向)の反射作用を有
する。図5(a)、(c)の電極構成を順方向SPUD
T、同図(e)、(f)の電極構成を逆方向SPUDT
と云うことにする。
Here, the excitable IDT electrode and the non-exciting IDT electrode will be described with reference to several examples. The basic section of the IDT electrode shown in FIG. This is a unidirectional transducer (EWC-SPUDT) composed of two electrode fingers having a width of λ / 8, and has a reflecting action in the direction of the arrow (forward direction) in the figure. Here, λ corresponds to one wavelength, and the basic section means an IDT electrode configuration for one wavelength. Although the basic section of the IDT electrode configuration shown in FIG. 5B has an exciting action, it is a type without unidirectionality. The IDT electrode in the basic section having the configuration shown in FIG. 5C has no excitation function, but has a reflection function in the direction of the arrow in the figure. FIG. 5 (d) shows a structure in which the λ / 8 electrode is connected only to the electrode of the same polarity, and has neither excitation nor reflection. The IDT electrode in the basic section in FIG. 5E is symmetrical to the electrode in FIG. 5A, and has an excitation action and one-way direction in the direction of the arrow (reverse direction) in the figure. The IDT electrode in the basic section having the configuration shown in FIG. 3F has no excitation function but has a unidirectional (reverse) reflection function in the direction of the arrow. The electrode configuration shown in FIGS.
T, the electrode configuration of FIG.
I will say.

【0007】図5に示した6種類の基本区間を用いて、
所望の特性を有するトランスバーサルSAWフィルタを
設計するアルゴリズムは、今のところ確立されていな
い。そこで、励振用IDT電極の基本区間の種類とその
区間数、励振作用のないIDT電極の基本区間の種類と
その区間数とを経験から設定し、シミュレーションによ
りフィルタ特性を確認しながら、所望の伝送特性に近づ
ける、所謂カットアンドトライを繰り返して、設計して
いるのが現状である。
[0007] Using the six types of basic sections shown in FIG.
Algorithms for designing transversal SAW filters with desired characteristics have not been established so far. Therefore, the type and number of basic sections of the IDT electrode for excitation and the type and number of basic sections of the IDT electrode having no excitation action are set from experience, and the desired transmission is performed while confirming the filter characteristics by simulation. At present, it is designed by repeating so-called cut-and-try to approach characteristics.

【0008】図6(a)、(b)は本願出願人が出願し
た特開2000−077973に開示されたものであっ
て、(a)に示すIDT電極32はその中心に対して対
称であるので左半分のみ構成を示している。即ち、図6
(a)の図中左端から順番に位置を示す番号(1、2、
・・n)を付け、その位置に配置するIDT電極の基本
区間(IDTパターン)の種類と区間数とを示したもの
が図6(b)である。IDTパターンのa〜fは図5
(a)〜(f)に示したIDT電極のパターンに対応し
ている。ここで70〜28までがメインローブ、27か
ら3までが第1サイドローブ、2〜1までが第2サイド
ローブであって、メインローブの区間数73に対して逆
方向SPUDTであるパターン(f)の区間数35と、
第1サイドローブに区間数23の順方向SPUDTと、
第2サイドローブに区間数3の逆方向SPUDTを配置
している。
FIGS. 6A and 6B are disclosed in Japanese Patent Application Laid-Open No. 2000-077973 filed by the present applicant, and the IDT electrode 32 shown in FIG. 6A is symmetric with respect to the center. Therefore, only the left half is shown. That is, FIG.
Numbers (1, 2,...) Indicating positions in order from the left end in FIG.
.. N) and FIG. 6B shows the type and number of basic sections (IDT patterns) of the IDT electrodes arranged at the positions. ID to af are shown in FIG.
It corresponds to the pattern of the IDT electrode shown in (a) to (f). Here, the main lobes 70 to 28, the first side lobes 27 to 3, the second side lobes 2 to 1, and a pattern (f) that is a backward SPUDT with respect to the number 73 of sections of the main lobe. ), 35 sections,
A forward SPUDT having 23 sections in the first side lobe;
In the second side lobe, a backward SPUDT having three sections is arranged.

【0009】図7は上記のような手法に基づいて設計し
たトランスバーサルSAWフィルタのフィルタ特性の一
例であり、CDMA−one用に試作したものである。
圧電基板に水晶STカット基板を用い、中心周波数を11
1.85MHz、帯域幅を1.25MHz、電極膜厚を2.3%λとした場
合のフィルタ特性である。
FIG. 7 shows an example of the filter characteristics of a transversal SAW filter designed based on the above-described method, and is a prototype produced for CDMA-one.
Use a quartz ST cut substrate for the piezoelectric substrate and set the center frequency to 11
This is a filter characteristic when 1.85 MHz, the bandwidth is 1.25 MHz, and the electrode film thickness is 2.3% λ.

【0010】[0010]

【発明が解決しようとする課題】しかしながら、上記に
示したようなトランスバーサルSAWフィルタのフィル
タ特性は、図7からも明らかなようにリップルも大き
く、しかも通過帯域特性が中心周波数に対して左右対称
ではなく、IF回路の伝送品質を劣化させるという問題
があった。本発明は上記問題を解決するためになされた
ものであって、トランスバーサルSAWフィルタの通過
域特性をほぼ左右対称にすると共に、リップルを改善し
たフィルタを提供することを目的とする。
However, the filter characteristics of the transversal SAW filter as described above have a large ripple as is clear from FIG. 7, and the pass band characteristic is symmetrical with respect to the center frequency. However, there is a problem that the transmission quality of the IF circuit is deteriorated. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to provide a filter in which the passband characteristics of a transversal SAW filter are made substantially symmetrical and ripples are improved.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するため
に本発明に係るの請求項1記載の発明は、圧電基板上に
表面波の伝搬方向に沿って2つのIDT電極を所定の間
隔をおいて配置してなるトランスバーサル弾性表面波フ
ィルタにおいて、前記IDT電極の一方を反射機能を有
する電極周期λRの基本区間と、反射機能を有しない電
極周期λSの基本区間とを用いて形成すると共に、電極
周期λR及びλSを互いに異ならせたことを特徴とする
トランスバーサル弾性表面波フィルタである。請求項2
記載の発明は、電極周期λRによって励起される表面波
の周波数と、電極周期λSによって励起もしくは共振す
る表面波の周波数とがほぼ同一になるように、それぞれ
の電極周期を設定したことを特徴とする請求項1又は2
記載のトランスバーサル弾性表面波フィルタである。請
求項3記載の発明は、電極周期偏倚率dをd=((λR
−λS)/λR)としたとき、前記圧電基板に水晶基板
を用いる場合はdを0.1%から0.15%の範囲とし
たことを特徴とする請求項1記載のトランスバーサル弾
性表面波フィルタである。
According to a first aspect of the present invention, there is provided an IDT electrode having two IDT electrodes formed on a piezoelectric substrate at a predetermined interval along a surface wave propagation direction. In the transversal surface acoustic wave filter, the one of the IDT electrodes is formed using a basic section of an electrode cycle λR having a reflection function and a basic section of an electrode cycle λS without a reflection function. , The electrode periods λR and λS are different from each other. Claim 2
The described invention is characterized in that the respective electrode periods are set such that the frequency of the surface wave excited by the electrode period λR is substantially the same as the frequency of the surface wave excited or resonated by the electrode period λS. Claim 1 or 2
It is a transversal surface acoustic wave filter of the description. According to the third aspect of the present invention, the electrode period deviation ratio d is set to d = ((λR
2. The transversal surface acoustic wave according to claim 1, wherein d is in a range of 0.1% to 0.15% when a quartz substrate is used as the piezoelectric substrate when -λS) / λR). Filter.

【0012】[0012]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1(a)は本発明に
係るトランスバーサルSAWフィルタの構成を示す平面
図であって、圧電基板1の主面上に表面波の伝搬方向に
沿ってIDT電極2と、所定の間隔を空けてIDT電極
3を配置すると共に、IDT電極2、3はそれぞれ互い
に間挿し合う複数の電極指を有する一対のくし形電極か
ら構成され、IDT電極2の一方のくし形電極は入力端
子IN-1に接続すると共に、他方のくし形電極は入力端
子IN-2に接続する。さらに、IDT電極3の一方のく
し形電極は出力端子OUT-1に接続すると共に、他方のく
し形電極は出力端子OUT-2に接続してトランスバーサル
SAWフィルタを構成する。図1(a)の実施例におい
ては、IDT電極3は正規型電極にて構成し、IDT電
極2は同図(b)、(c)に示すIDT電極の基本区間
を所望の特性が得られるように配置している。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1A is a plan view showing a configuration of a transversal SAW filter according to the present invention. The transversal SAW filter is spaced apart from an IDT electrode 2 on a main surface of a piezoelectric substrate 1 along a propagation direction of a surface wave by a predetermined distance. The IDT electrodes 3 and 3 are each composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interposed therebetween, and one of the IDT electrodes 2 is connected to the input terminal IN-1. And the other comb-shaped electrode is connected to the input terminal IN-2. Further, one comb-shaped electrode of the IDT electrode 3 is connected to the output terminal OUT-1, and the other comb-shaped electrode is connected to the output terminal OUT-2 to form a transversal SAW filter. In the embodiment shown in FIG. 1A, the IDT electrode 3 is constituted by a regular electrode, and the IDT electrode 2 can obtain desired characteristics in the basic section of the IDT electrode shown in FIGS. 1B and 1C. Are arranged as follows.

【0013】図5に示した基本区間のIDT電極を経験
に基づいて組み合わせ、シミュレーションによってその
伝送特性を確認しながら、所望の特性を実現する手法は
従来の通りであるが、本発明の特徴は図1(b)のよう
に反射機能を有する基本区間の電極周期λRと、同図
(c)のように反射機能を有しない基本区間の電極周期
λSとを互いに異ならせて、トランスバーサルSAWフ
ィルタを構成したところにある。例えば、CDMA−o
neに用いるIFフィルタ用トランスバーサルSAWフ
ィルタの圧電基板としては、水晶STカットが多く使用
される。水晶圧電基板を用いた場合、図1(b)に示す
ような電極指の1本を3λ/8とし、他の2本をλ/8
として反射機能を持たせた領域における位相速度をV
R、同図(c)に示すような電極指が全てλ/8で構成
する領域における位相速度をVSとすると、電極周期λ
が同一の場合、位相速度VR、VSはが互いに異なるこ
とになる。
The method of realizing desired characteristics while combining the IDT electrodes of the basic section shown in FIG. 5 based on experience and confirming the transmission characteristics by simulation is the same as the conventional method. A transversal SAW filter in which an electrode period λR in a basic section having a reflection function as shown in FIG. 1B and an electrode period λS in a basic section without a reflection function as shown in FIG. Is where it is composed. For example, CDMA-o
As the piezoelectric substrate of a transversal SAW filter for an IF filter used for ne, a crystal ST cut is often used. When a quartz crystal substrate is used, one electrode finger as shown in FIG. 1B is set to 3λ / 8, and the other two are set to λ / 8.
The phase velocity in the region having the reflection function as V
R, assuming that the phase velocity in a region in which the electrode fingers are all λ / 8 as shown in FIG.
Are the same, the phase velocities VR and VS are different from each other.

【0014】そこで、図1(b)、(c)の基本区間に
おける表面波の周波数が同一になるように VR/λR=VS/λS とすれば、フィルタ特性が改善できると推測した。ここ
で、反射機能を有する基本区間の電極周期λRに対する
電極周期偏倚率dをd=((λR−λS)/λR)と
し、電極周期偏倚率dを少しずつ変化せた場合のトラン
スバーサルSAWフィルタの帯域特性を測定することに
した。圧電基板に水晶STカット基板を用い、中心周波
数を111.85MHz、帯域幅を1.25MHz、電極膜厚を2.3%λと
した場合のフィルタ特性を示したものが図2である。図
2(a)、(b)、(c)は電極周期偏倚率dを0.0
6%、0.11%、0.16%とした場合の通過域のフ
ィルタ特性である。
Therefore, it was presumed that the filter characteristics could be improved by setting VR / λR = VS / λS so that the frequencies of the surface waves in the basic sections in FIGS. 1B and 1C would be the same. Here, a transversal SAW filter in the case where the electrode period deviation ratio d with respect to the electrode period λR in the basic section having the reflection function is d = ((λR−λS) / λR), and the electrode period deviation ratio d is gradually changed. Was measured. FIG. 2 shows filter characteristics when a quartz crystal ST cut substrate is used as the piezoelectric substrate, the center frequency is 111.85 MHz, the bandwidth is 1.25 MHz, and the electrode film thickness is 2.3% λ. FIGS. 2A, 2B and 2C show that the electrode period deviation ratio d is 0.0.
It is a filter characteristic of a pass band in case it is set to 6%, 0.11%, and 0.16%.

【0015】図3は、電極周期偏倚率dをさらに詳細に
変化させて通過帯域内偏差を測定し、横軸を電極周期偏
倚率d、縦軸を帯域内偏差(dB)としてプロットした
図である。この図から明らかなように、電極周期偏倚率
dとして0.13%程度と設定した場合に帯域内偏差が
最小となり、従来の場合の0.6dBの帯域内偏差に対
して、0.3dB以下と改善されることが判明した。
FIG. 3 is a diagram in which the deviation in the pass band is measured by changing the electrode period deviation ratio d in more detail, and the horizontal axis is plotted as the electrode period deviation ratio d and the vertical axis is plotted as the band deviation (dB). is there. As is clear from this figure, when the electrode period deviation ratio d is set to about 0.13%, the in-band deviation is minimized, and the in-band deviation of 0.6 dB in the conventional case is 0.3 dB or less. And was found to be improved.

【0016】以上、本発明を圧電基板に水晶STカット
を用いた場合のトランスバーサルSAWフィルタについ
て説明したが本発明はこれに限定されるものではなく、
圧電基板にタンタル酸リチウム、ニオブ酸リチウム、四
硼酸リチウム、ランガサイト等を用いた場合にも適用す
ることができる。その場合には、それぞれの圧電基板に
反射機能を有する基本区間と、反射機能を有しない基本
区間とをそれぞれ配設し、このときの位相速度をシミュ
レーション、あるいは実験によって求め、図3に相当す
る図を作成して、トランスバーサルSAWフィルタの帯
域内リップルが最小値となるような電極周期偏倚率dに
設定すればよい。また、IDT電極を構成する基本区間
は図1または図5に示すものに限定される訳ではなく、
反射機能を有するものと反射機能を有さないものをどの
ように組み合わせたものにも適用可能であることは云う
までもない。
Although the present invention has been described with reference to a transversal SAW filter using a quartz crystal ST-cut for a piezoelectric substrate, the present invention is not limited to this.
The present invention can also be applied to a case where lithium tantalate, lithium niobate, lithium tetraborate, langasite, or the like is used for the piezoelectric substrate. In this case, a basic section having a reflection function and a basic section having no reflection function are provided on each piezoelectric substrate, and the phase velocity at this time is obtained by simulation or experiment, and corresponds to FIG. A diagram may be created and the electrode period deviation ratio d may be set so that the in-band ripple of the transversal SAW filter becomes a minimum value. Further, the basic sections constituting the IDT electrode are not limited to those shown in FIG. 1 or FIG.
It goes without saying that the present invention can be applied to any combination of a member having a reflection function and a member having no reflection function.

【0017】[0017]

【発明の効果】本発明は、以上説明したように構成した
ので、例えばCDMA−oneのIF回路に用いるトラ
ンスバーサルSAWフィルタの通過域特性を平坦化する
ことが可能となり、IF回路の伝送品質を向上させるこ
とができるという優れた効果を表す。
According to the present invention, as described above, the passband characteristic of a transversal SAW filter used in a CDMA-one IF circuit can be flattened, and the transmission quality of the IF circuit can be reduced. It shows an excellent effect that it can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明に係るトランスバーサルSAW
フィルタの構成を示す平面図、(b)はIDT電極の反
射機能を有する基本区間、(c)IDT電極の反射機能
の無い基本区間を示す図である。
FIG. 1 (a) is a transversal SAW according to the present invention.
FIG. 3B is a plan view illustrating the configuration of the filter. FIG. 3B is a diagram illustrating a basic section having a reflection function of an IDT electrode, and FIG. 3C is a view illustrating a basic section having no reflection function of an IDT electrode.

【図2】(a)、(b)、(c)は電極周期偏倚率dを
変化させた場合のフィルタ特性である。
FIGS. 2A, 2B, and 2C show filter characteristics when an electrode period deviation ratio d is changed.

【図3】圧電基板に水晶STカットを用いた場合、電極
周期偏倚率dと帯域内偏差との関係を示す図である。
FIG. 3 is a view showing a relationship between an electrode period deviation ratio d and an in-band deviation when a quartz crystal ST cut is used for a piezoelectric substrate.

【図4】従来のトランスバーサルSAWフィルタの構成
を示す図である。
FIG. 4 is a diagram showing a configuration of a conventional transversal SAW filter.

【図5】(a)、(b)、(c)、(d)、(e)、
(f)は従来のトランスバーサルSAWフィルタを形成
するIDT電極の基本区間である。
FIG. 5 (a), (b), (c), (d), (e),
(F) is a basic section of an IDT electrode forming a conventional transversal SAW filter.

【図6】(a)は従来の基本区間を用いて構成したトラ
ンスバーサルSAWフィルタの平面図、(b)は(a)
の詳細図で位置、IDTパターン、基本区間数を示す図
である。
6A is a plan view of a transversal SAW filter configured using a conventional basic section, and FIG. 6B is a plan view of FIG.
FIG. 4 is a diagram showing a position, an IDT pattern, and the number of basic sections in a detailed view of FIG.

【図7】従来のトランスバーサルSAWフィルタのフィ
ルタ特性を示す図である。
FIG. 7 is a diagram showing filter characteristics of a conventional transversal SAW filter.

【符号の説明】[Explanation of symbols]

1・・圧電基板 2、3・・IDT電極 λR・・反射機能を有するIDT電極の基本区間の電極
周期 λS・・反射機能の無いIDT電極の基本区間の電極周
1. Piezoelectric substrate 2, 3 IDT electrode λR Electrode period of basic section of IDT electrode having reflection function λS Electrode period of basic section of IDT electrode without reflection function

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板上に表面波の伝搬方向に沿って
2つのIDT電極を所定の間隔をおいて配置してなるト
ランスバーサル弾性表面波フィルタにおいて、前記ID
T電極の一方を反射機能を有する電極周期λRの基本区
間と、反射機能を有しない電極周期λSの基本区間とを
用いて形成すると共に、電極周期λR及びλSを互いに
異ならせたことを特徴とするトランスバーサル弾性表面
波フィルタ。
1. A transversal surface acoustic wave filter comprising two IDT electrodes arranged on a piezoelectric substrate at a predetermined interval along a propagation direction of a surface acoustic wave.
One of the T electrodes is formed using a basic section of an electrode cycle λR having a reflection function and a basic section of an electrode cycle λS without a reflection function, and the electrode cycles λR and λS are different from each other. Transversal surface acoustic wave filter.
【請求項2】 電極周期λRによって励起される表面波
の周波数と、電極周期λSによって励起もしくは共振す
る表面波の周波数とがほぼ同一になるように、それぞれ
の電極周期を設定したことを特徴とする請求項1又は2
記載のトランスバーサル弾性表面波フィルタ。
2. The method according to claim 1, wherein each of the electrode periods is set such that the frequency of the surface wave excited by the electrode period λR is substantially equal to the frequency of the surface wave excited or resonated by the electrode period λS. Claim 1 or 2
The transversal surface acoustic wave filter according to any of the preceding claims.
【請求項3】 電極周期偏倚率dをd=((λR−λ
S)/λR)としたとき、前記圧電基板に水晶基板を用
いる場合はdを0.1%から0.15%の範囲としたこ
とを特徴とする請求項1又は2記載のトランスバーサル
弾性表面波フィルタ。
3. The electrode period deviation ratio d is defined as d = ((λR−λ
The transversal elastic surface according to claim 1 or 2, wherein when S) / λR), when a quartz substrate is used as the piezoelectric substrate, d is in a range of 0.1% to 0.15%. Wave filter.
JP2000114366A 2000-04-14 2000-04-14 Transversal surface acoustic wave filter Expired - Fee Related JP3451234B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000114366A JP3451234B2 (en) 2000-04-14 2000-04-14 Transversal surface acoustic wave filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000114366A JP3451234B2 (en) 2000-04-14 2000-04-14 Transversal surface acoustic wave filter

Publications (2)

Publication Number Publication Date
JP2001298343A true JP2001298343A (en) 2001-10-26
JP3451234B2 JP3451234B2 (en) 2003-09-29

Family

ID=18626182

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108901A (en) * 2004-10-01 2006-04-20 Epson Toyocom Corp Unidirectional surface acoustic wave transducer and surface acoustic wave device using the same
JP2007124439A (en) * 2005-10-31 2007-05-17 Epson Toyocom Corp Surface acoustic wave element chip and surface acoustic wave device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108901A (en) * 2004-10-01 2006-04-20 Epson Toyocom Corp Unidirectional surface acoustic wave transducer and surface acoustic wave device using the same
JP4506394B2 (en) * 2004-10-01 2010-07-21 エプソントヨコム株式会社 Unidirectional surface acoustic wave transducer and surface acoustic wave device using the same
JP2007124439A (en) * 2005-10-31 2007-05-17 Epson Toyocom Corp Surface acoustic wave element chip and surface acoustic wave device
JP4548305B2 (en) * 2005-10-31 2010-09-22 エプソントヨコム株式会社 Dual-mode surface acoustic wave filter

Also Published As

Publication number Publication date
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