JP2001291816A - High frequency current suppressing electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency current suppressing electronic component which suppresses sufficiently a high frequency current and can prevent generation of electromagnetic interference, when the component is used at a high frequency. SOLUTION: This semiconductor integrated circuit element (IC) 1 is used in a high frequency band and operates at a high speed. High frequency current suppressing members 3 which attenuate high frequency currents flowing in terminals 2 themselves are installed to a prescribed number of the terminals 2. The suppressing members 3 are thin film magnetic substance whose thickness is in the range of 0.3-20 μm and formed on the whole surface up to end portions including mounting parts to be mounted on a printed wiring circuit board 4 for mounting the IC 1 to the surfaces of the respective terminals 2, and connecting parts to conductive patterns 5 arranged on the board 4. By connecting tip portions with the conductive patterns 5 by using solder 6 when the IC 1 is mounted on the board 4, the vicinity of mounting parts exhibits conductivity in the used frequency band of at most several tens MHz.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a predetermined number of terminals typified by semiconductor active devices such as a semiconductor integrated circuit device (IC), a semiconductor large-scale integrated circuit device (LSI), a logic circuit device, etc. More particularly, the present invention relates to a high-frequency current suppressing type electronic component having a function of attenuating a high-frequency current flowing through a terminal during use.

[0002]

2. Description of the Related Art In recent years, electronic components mounted on a printed wiring circuit board provided with a conductive pattern and mounted on an electronic device or an information processing device in the field of electronic information communication, for example, include a random access memory ( RAM), read only memory (ROM), and other semiconductor storage devices, or logic circuit elements such as microprocessors (MPUs), central processing units (CPUs), and image processor arithmetic and logic units (IPALUs) A variety of semiconductor active devices including the following are used.

[0003] These semiconductor active devices are generally used at a high frequency when commercialized, and in order to perform high-speed operation, a large number of terminals are used for signal processing by performing large-scale integration according to a circuit layout. (Usually called a lead frame) and a semiconductor integrated circuit device (IC)
And a semiconductor large-scale integrated circuit (LSI) chip.

On the other hand, the operation speed and signal processing speed of such a semiconductor active device are increasing at a rapid pace, and in order to perform high-speed operation after further integration, several tens of MHz to several Used at high frequencies in the GHz band.

[0005]

In the case of electronic components typified by the above-mentioned semiconductor active elements, if they are used at a high frequency of several tens of MHz to several GHz in order to perform a high-speed operation, an electric signal flowing through a terminal becomes It becomes high frequency (harmonic) current, and this high frequency current flows between parts, between signal paths including terminals,
Alternatively, the electric conduction may occur between the devices on which the electronic components are mounted. Such a high-frequency current adversely affects the operation processing in a component (circuit element) and causes a malfunction,
Alternatively, it must be removed because it causes electromagnetic interference, such as deteriorating the basic performance. However, at present, high frequency current countermeasures are not sufficiently considered in electronic components, and electromagnetic interference caused by high frequency current is not considered. There is a problem that occurrence cannot be prevented.

The present invention has been made in order to solve such problems, and its technical problems are several tens MHz to several G.
It is an object of the present invention to provide a high-frequency current suppression type electronic component capable of sufficiently suppressing a high-frequency current and preventing the occurrence of electromagnetic interference even when used at a high frequency in a Hz band.

[0007]

According to the present invention, in an electronic component having a predetermined number of terminals provided for signal processing, a part or all of the predetermined number of terminals may be replaced by the terminals themselves. A high-frequency current suppression type electronic component provided with a high-frequency current suppressor that attenuates a high-frequency current in a frequency band of several tens of MHz to several GHz flowing through the electronic device.

In this high-frequency current suppression type electronic component,
The high-frequency current suppressor has a high-frequency current suppressor mounted on a circuit board for mounting at least an electronic component on a part or the entire surface of a predetermined number of terminals,
In addition, the high-frequency current suppressor is provided on a circuit board for mounting at least an electronic component, except that the high-frequency current suppressor is provided at a location other than an end including a connection portion to the conductive pattern provided on the circuit board. Dozens of M near the mounting part
It is preferable to exhibit conductivity in a working frequency band of less than Hz.

According to the present invention, in any one of the above high-frequency current suppressing type electronic components, the high-frequency current suppressing body is formed on a part or all of the surfaces of a predetermined number of terminals by a sputtering method. The obtained high-frequency current suppression type electronic component or high-frequency current suppression body is obtained as a high-frequency current suppression type electronic component formed on a part or all of the surfaces of a predetermined number of terminals by a vapor deposition method.

Further, according to the present invention, in any of the above high-frequency current suppressing type electronic components, the high-frequency current suppressing body is
The metallic base material plate used in the step of manufacturing the predetermined number of terminals is formed on a part or the whole of the metal base material plate used in the step of manufacturing the predetermined number of terminals. It is preferable that a material plate is cut out and formed on some or all of the surfaces formed as the predetermined number of terminals.

On the other hand, according to the present invention, in an electronic component having a predetermined number of terminals to be used for signal processing, some or all of the predetermined number of terminals are used in a frequency band of use less than several tens of MHz. A high-frequency current suppression type electronic component comprising a high-frequency current suppressor that exhibits conductivity and attenuates a high-frequency current in a band of several tens of MHz to several GHz flowing through the terminal itself is obtained.

In this high-frequency current suppression type electronic component,
It is preferable that the high-frequency current suppressor is manufactured by a sputtering method, or that the high-frequency current suppressor is manufactured by a vapor deposition method.

[0013] In any one of these high-frequency current suppressing electronic components, the high-frequency current suppressing body has a thickness of 0.3 to 0.3 mm.
It is preferable that the thickness be in the range of 20 (μm) or a thin film magnetic material.

On the other hand, according to the present invention, in any one of the above high-frequency current suppressing type electronic components, the high-frequency current suppressing body may have a composition M (where M is at least one of Fe, Co, and Ni), M-X-Y by a mixture of Y (where Y is at least one of F, N and O) and X (where X is at least one element other than the elements contained in M and Y) A magnetic loss material of a system, wherein the maximum value μ ″ _max of the imaginary part μ ″ is 100 MHz at a frequency of 100 MHz on the complex magnetic permeability characteristic in which the imaginary part μ ″ with respect to the real part μ ′ in the magnetic permeability characteristic is shown in relation to the frequency. The maximum value μ ″ in the imaginary part μ ″ in the band range of 10 GHz to 10 GHz.
A half-width value μ ″ ₅₀ corresponding to a half-width obtained by standardizing a frequency band that is 50% or more of _max with the center frequency of the frequency band.
Is less than 200%, and a high-frequency current suppression type electronic component made of a narrow band magnetic loss material is obtained.

In this high-frequency current suppression type electronic component,
The narrow band magnetic loss material has a saturation magnetization in the range of 80 to 60 (%) of the saturation magnetization of the metal magnetic material including only the composition M. Further, the narrow band magnetic loss material has a DC electric resistivity. Is preferably in the range of 100 to 700 (μΩ · cm).

Further, according to the present invention, in any one of the above high-frequency current suppressing electronic components, the high-frequency current suppressing body may have a composition M (where M is at least one of Fe, Co, and Ni), M-X-Y by a mixture of Y (where Y is at least one of F, N and O) and X (where X is at least one element other than the elements contained in M and Y) A magnetic loss material of a system, wherein the maximum value μ ″ _max of the imaginary part μ ″ is 100 MHz at a frequency of 100 MHz on the complex magnetic permeability characteristic in which the imaginary part μ ″ with respect to the real part μ ′ in the magnetic permeability characteristic is shown in relation to the frequency. The maximum value μ ″ in the imaginary part μ ″ in the band range of 10 GHz to 10 GHz.
A half-width value μ ″ ₅₀ corresponding to a half-width obtained by standardizing a frequency band that is 50% or more of _max with the center frequency of the frequency band.
, A high-frequency current suppression type electronic component made of a broadband magnetic loss material having a ratio of not less than 150% is obtained.

In this high-frequency current suppressing type electronic component,
The broadband magnetic loss material has a saturation magnetization in the range of 60 to 35 (%) of the saturation magnetization of the metal magnetic material composed of only the component M. Further, the broadband magnetic loss material has a DC electric resistivity of 500 μΩ. It is preferable that the value is larger than cm.

In addition, according to the present invention, in any one of the above-described high-frequency current suppressing electronic components, the narrow band magnetic loss material or the wide band magnetic loss material has a composition X of C, B, S.
i, Al, Mg, Ti, Zn, Hf, Sr, Nb, T
a, and a high-frequency current suppressing electronic component or at least one of the rare earth elements, or a narrow band magnetic loss material or a wide band magnetic loss material, wherein the composition M is dispersed in a matrix of a compound composed of the composition X and the composition Y. Thus, a high-frequency current suppression type electronic component existing in a granular form can be obtained. In the latter high-frequency current suppressing type electronic component, the narrow band magnetic loss material or the wide band magnetic loss material has an average particle diameter of particles having a granular shape of 1 to 40 (nm).
Is preferably within the range.

According to the invention, in any one of the above high-frequency current suppressing electronic components, the narrow band magnetic loss material or the wide band magnetic loss material has an anisotropic magnetic field of 47400 A.
/ M or less.

Further, according to the present invention, in any one of the above high-frequency current suppressing type electronic components, the MXY system is
An e-Al-O-based high-frequency current suppression type electronic component or an M-XY-based high-frequency current suppression type electronic component is obtained.

In addition, according to the present invention, in any one of the above-mentioned high-frequency current suppressing type electronic components, the electronic component is a semiconductor active element used in a high frequency band and operating at high speed, and a semiconductor integrated circuit element. And a high-frequency current suppression type electronic component which is one of a semiconductor large-scale integrated circuit device and a logic circuit device.

[0022]

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

FIG. 1 shows the basic structure of a semiconductor integrated circuit device 1 according to one embodiment of the high-frequency current suppression type electronic component of the present invention. FIG. 1A is mounted on a printed circuit board 4. FIG. 2B is a side view in which a main part is enlarged and a part is sectioned.

The semiconductor integrated circuit device 1 is used in a high frequency band and operates at a high speed. A predetermined number of terminals 2 used for signal processing have tens of MHz to several GHz flowing through the terminals themselves. A high-frequency current suppressor 3 for attenuating a high-frequency current in a band is provided. The high-frequency current suppressor 3 is a thin-film magnetic material having a thickness in the range of 0.3 to 20 (μm), and is a printed wiring for mounting the semiconductor integrated circuit element 1 on the surface of each terminal 2. The semiconductor integrated circuit device 1 is provided on the entire surface including a mounting portion mounted on the circuit board 4 and an end portion including a connection portion to the conductive pattern 5 provided on the printed wiring circuit board 4.
By mounting the tip of each terminal 2 to the conductive pattern 5 provided on the side opposite to the mounting surface of the printed wiring circuit board 4 using solder 6 at the time of mounting on the printed wiring circuit board 4, Is conductive in a working frequency band of less than several tens of MHz.

In such a semiconductor integrated circuit device 1, the surface of each terminal 2 exhibits conductivity in a working frequency band of less than several tens of MHz, and a high frequency of several tens MHz to several GHz which flows through each terminal 2. Since the high-frequency current suppressor 3 for attenuating the current is provided, the semiconductor integrated circuit device 1
Even when is used at a high frequency of several tens of MHz to several GHz, the high-frequency current suppressor 3 sufficiently attenuates the high-frequency current flowing through each terminal 2 to prevent the occurrence of electromagnetic interference and eliminate its adverse effect. can do.

By the way, the form of the high-frequency current suppressor 3 provided on the predetermined number of terminals 2 of the semiconductor integrated circuit device 1 and the form of the predetermined number of terminals 2 themselves are changed.
The semiconductor integrated circuit devices 1 and 1 'according to other embodiments as shown in FIGS.

That is, referring to FIG. 2A, the basic structure of the semiconductor integrated circuit device 1 is the same as that of the embodiment, but here, compared with the structure of the embodiment, A mounting portion where the high-frequency current suppressor 3 ′ provided on the surface of the predetermined number of terminals 2 ′ is mounted on the printed wiring circuit board 4 and a connection portion to the conductive pattern 5 provided on the printed wiring circuit board 4. Terminal exposing portion 2 which is provided at a location except for the end portion including
The difference is that a is connected to the conductive pattern 5 provided on the side opposite to the mounting surface of the printed wiring circuit board 4 using the solder 6.

Referring to FIG. 2B, the semiconductor integrated circuit device 1 'differs from the semiconductor integrated circuit device 1 of the embodiment and FIG. 2A in that a predetermined number of terminals 2 "are provided. Are connected to the conductive pattern 5 disposed on the mounting surface side of the printed wiring circuit board 4, and the other points are the same as in the case of the predetermined number of terminals 2 'in FIG. A mounting portion where the high-frequency current suppressor 3 ″ provided on the surface of the predetermined number of terminals 2 ″ is mounted on the printed wiring circuit board 4, and a connection portion to the conductive pattern 5 provided on the printed wiring circuit board 4. In this configuration, the exposed terminal exposed portion 2a is provided at a position except for the end portion including the exposed portion, and the exposed terminal exposed portion 2a is connected to the conductive pattern 5 disposed on the mounting surface side of the printed wiring circuit board 4 using the solder 6. ing.

In such semiconductor integrated circuit devices 1 and 1 ', several tens of MHz are applied to the surface of each terminal 2' and 2 ".
It has a configuration in which high-frequency current suppressors 3 ', 3 "that exhibit conductivity in a frequency band of use less than and attenuate high-frequency currents in the tens of MHz to several GHz band flowing through each terminal 2', 2" are provided. Therefore, even if the semiconductor integrated circuit elements 1 and 1 'are used at a high frequency in the range of several tens of MHz to several GHz, the high-frequency current suppressors 3' and 3 "can sufficiently supply the high-frequency current flowing through the terminals 2 'and 2". By attenuating this, it is possible to prevent the occurrence of electromagnetic interference and eliminate its adverse effects.

In any case, the high-frequency current suppressor 3,
3 ', 3 "are terminals 2, 2', 2 as thin-film magnetic materials having a thickness in the range of 0.3 to 20 (μm) and having conductivity as a whole in an operating frequency band of less than several tens of MHz. The film is formed integrally by sputtering or vapor deposition.

Here, when the high frequency current suppressors 3, 3 ', 3 "are formed on the surfaces of the predetermined number of terminals 2, 2', 2", the predetermined number of terminals 2, 2 ', 2 "are previously formed. The high frequency current suppressor 3,
3 ′, 3 ″ is formed into a film, and then a metal base plate is cut out.
Alternatively, a predetermined number of terminals 2
The high-frequency current suppressors 3, 3 ', 3 "may be formed on the surface of 2', 2". FIG.
In the case of the high-frequency current suppressor 3 'shown in FIG. 2A or the high-frequency current suppressor 3 "shown in FIG. It is possible to form a film by a sputtering method or a vapor deposition method using the integrated circuit elements 1 and 1 'main bodies and the mounting portions and connection portions of the terminals 2' and 2 "as masks. In any case, when forming the high-frequency current suppressors 3, 3 ', 3 ", the entire surface of the terminals 2, 2', 2" is targeted.
The surface of a part of the terminals 2, 2 ', 2 "may be targeted. In addition to the above-mentioned sputtering method and vapor deposition method, chemical vapor deposition (CVD) method, ion beam vapor deposition method, gas deposition method, transfer method Etc. can be applied.

Incidentally, the high-frequency current suppressors 3, 3 ',
One of the materials applicable as 3 ″ is a component M (however,
M is at least one of Fe, Co and Ni), Y
(Where Y is at least one of F, N, and O) and X (where X is at least one of the elements other than the elements contained in M and Y). The magnetic loss material of the above, wherein the real part μ ′ in the permeability characteristic
The maximum value μ ″ _max of the imaginary part μ ″ (also referred to as a magnetic loss term) on the complex magnetic permeability characteristic in which the imaginary part μ ″ is expressed in relation to the frequency exists in the frequency range of 100 MHz to 10 GHz, and Maximum value μ ″ in part μ ″
A half-width value μ ″ corresponding to a half-width obtained by standardizing a frequency band that is 50% or more of _max with the center frequency of the frequency band.
₅₀ is a narrow band magnetic loss material within 200%. However,
In the narrow band magnetic loss material in this case, the magnitude of the saturation magnetization is 80 to 80 of the saturation magnetization of the metal magnetic material composed only of the composition M.
60 (%), and the DC electrical resistivity is 100 to 7
It is assumed to be in the range of 00 (μΩ · cm).

Another material that can be used as the high-frequency current suppressors 3, 3 ', 3 "is a component M (where M is at least one of Fe, Co and Ni) and Y (where , Y is at least one of F, N, O) and X
(Where X is at least one element other than the elements contained in M and Y) is an M-X-Y-based magnetic loss material, which is an imaginary part with respect to a real part μ ′ in permeability properties. The maximum value μ ″ _max of the imaginary part μ ″ is 100 MH on the complex magnetic permeability characteristic showing μ ″ in relation to the frequency.
A half-width corresponding to a half-width that is in the band range of z to 10 GHz and is 50% or more of the maximum value μ ″ _{max in the} imaginary part μ ″, normalized by the center frequency of the frequency band. It is a broadband magnetic loss material having a value μ ″ ₅₀ of 150% or more. However, in this case, in the case of the broadband magnetic loss material, the magnitude of the saturation magnetization is 60 to 35 ( %) And the DC electrical resistivity is a value larger than 500 μΩ · cm.

Further, these high-frequency current suppressors 3,
The narrow band magnetic loss material and the broad band magnetic loss material applied as 3 ′, 3 ″ are all composed of C, B, Si, A
l, Mg, Ti, Zn, Hf, Sr, Nb, Ta, and at least one of the rare earth elements, in a granular form in which the composition M is dispersed in a matrix of a compound having the composition X and the composition Y. It is assumed that the average particle diameter of the existing particles having a granular form is in the range of 1 to 40 (nm) and the anisotropic magnetic field is 47400 A / m or less. In addition, if the M-X-Y system of the narrow band magnetic loss material and the wide band magnetic loss material is specifically limited, Fe-Al-O
Or a Fe-Si-O system.

FIG. 3 shows the basic structure of a semiconductor integrated circuit device 1 ″ according to another embodiment of the high-frequency current suppression type electronic component of the present invention. FIG. 4B is a side view in which a main part is enlarged and a part is sectioned.

In the case of the semiconductor integrated circuit device 1 ″, a lead frame is formed as a wide sheet-like high-frequency current suppressor 7 having a predetermined number of terminals themselves as compared with the configuration of the above-described embodiment. Is different.

The sheet-like high-frequency current suppressor 7 here also
A thin-film magnetic material made of a narrow-band magnetic loss material or a broad-band magnetic loss material having the same composition as that of the high-frequency current suppressors 3 and 3 'described above. Y system is Fe-Al-O system or F system
It is an e-Si-O type.

Accordingly, also in this semiconductor integrated circuit device 1 ", the sheet-shaped high-frequency current suppressor 7 is used when used at a high frequency of several tens of MHz to several GHz as in the case of the first and second embodiments. Can sufficiently attenuate the high-frequency current flowing through itself, thereby preventing the occurrence of electromagnetic interference and eliminating its adverse effects. It is possible to change to a configuration in which the tip of the body 7 is connected to the conductive pattern 5 provided on the mounting surface side of the printed circuit board 4 with the solder 6.

In each of the embodiments described above, the case where the semiconductor integrated circuit elements (IC) 1, 1 ', 1 "are used as the electronic components has been described. However, instead of this, a semiconductor large-scale integrated circuit element (LSI) is used. ), Microprocessor (MPU),
It is similarly effective to apply a semiconductor active element including a logic circuit element represented by a central processing unit (CPU), an image processor arithmetic logic unit (IPALU), and the like.
In addition, any electronic component having a terminal serving as a lead frame mounted and arranged on the printed wiring circuit board 4 may be used.
By providing a high-frequency current suppressor at the terminal for them or applying a configuration in which the terminal itself is a sheet-like high-frequency current suppressor 7, the effect of suppressing high-frequency current and preventing the occurrence of electromagnetic interference can be obtained. .

In any case, the high-frequency current suppressors 3, 3 provided at the terminals 2, 2 ', 2 "in the semiconductor integrated circuit devices 1, 1' of the form described in one embodiment and other embodiments. , 3 "or the sheet-like high-frequency current suppressor 7 which is a substitute for the terminal itself described in another embodiment is a complex thin-film magnetic material having a small volume and capable of effectively preventing unnecessary radiation. A magnetic loss material having a large imaginary part (hereinafter referred to as a magnetic loss term) μ ″ in the magnetic permeability characteristic is used.

Therefore, the technical background until such a magnetic loss material is researched and developed will be described below. The present inventors have proposed a composite magnetic material having high magnetic loss characteristics in a high frequency band prior to the filing of the present application, and by disposing this in the vicinity of an unnecessary radiation source, a composite magnetic material generated from an electronic component typified by a semiconductor active element. Have found a way to effectively suppress unwanted radiation.

Regarding the function of attenuating unnecessary radiation utilizing the magnetic loss of such a magnetic material, a recent study has provided an equivalent resistance component to an electronic circuit of an electronic component serving as an unnecessary radiation source. It turns out that it is. Here, the magnitude of the equivalent resistance component depends on the magnitude of the magnetic loss term μ ″ of the magnetic material. More specifically, the magnitude of the resistance component equivalently inserted into the electronic circuit is When the area of the magnetic body is constant, the magnetic loss term μ ″ is approximately proportional to the thickness of the magnetic body. Therefore, in order to obtain a desired unnecessary radiation attenuation with a smaller or thinner magnetic material, a larger magnetic loss term μ ″ is required. In order to take measures against unwanted radiation by using a magnetic material, the magnetic loss term μ ″ needs to be an extremely large value, and a magnetic material having a much larger magnetic loss term μ ″ than conventional magnetic loss materials is required. .

The inventors of the present invention have studied the formation of a granular magnetic material in which fine magnetic metal particles are homogeneously dispersed in a non-magnetic material such as ceramics during the process of forming a soft magnetic material by sputtering or vapor deposition. Focusing on the excellent permeability characteristics, we studied the microstructure of magnetic metal particles and the non-magnetic material surrounding them, and found that when the concentration of magnetic metal particles in the granular magnetic material was in a specific range, it was excellent in the high frequency range It has been found that excellent magnetic loss characteristics can be obtained.

FIG. 4 schematically shows the basic structure of an MXY granular magnetic material. M-X-Y
System (where the composition M is at least one of Fe, Co, and Ni, and the composition Y is at least one of F, N, and O;
Many studies have been made so far on the granular magnetic material having a composition of which the composition X is at least one element other than the elements contained in the composition M and the composition Y). It is known to have. In this M-X-Y granular magnetic material,
The magnitude of the saturation magnetization depends on the volume ratio occupied by the composition M11.
It is necessary to increase the ratio of 11. For this reason, in the case of a general use such as a high frequency inductor element or a magnetic core of a transformer or the like, the proportion of the composition M11 in the MXY granular magnetic material is such that the bulk composed of only the composition M11 is used. This is limited to a range where a saturation magnetization of about 80% or more of the saturation magnetization of the metal magnetic material can be obtained.

The inventors of the present invention have studied the proportion of the composition M11 in the MXY granular magnetic material in a wide range. At high frequencies, they show large magnetic loss.

In general, the ratio of the component M11 is
8 for the saturation magnetization of the bulk metal magnetic material consisting of only 1
The highest region exhibiting a saturation magnetization of 0% or more is a region of an MXY granular magnetic material which has been studied extensively conventionally and has a low loss in a high saturation magnetization. The granular magnetic material in this region has a large value of the real part μ ′ in magnetic permeability characteristics and the value of saturation magnetization, and therefore is used for a high-frequency micro-magnetic device such as a high-frequency inductor as described above, but affects the electric resistance. Since the proportion of the composition XY12 is small, the electric resistivity is small. For this reason, when the film thickness increases, the magnetic permeability μ at a high frequency deteriorates due to the occurrence of an eddy current loss in a high frequency region, and is not suitable for a relatively thick magnetic film used for noise suppression.

On the other hand, the ratio of the composition M11 is 8% of the saturation magnetization of the bulk metal magnetic material composed only of the composition M11.
Since the region exhibiting the saturation magnetization of 60% or more at 0% or less has a relatively large electric resistivity of about 100 μΩ · cm or more, even if the thickness of the magnetic material is about several μm, the loss due to the eddy current is small. The magnetic loss is almost a loss due to natural resonance. For this reason, the frequency dispersion width of the magnetic loss term μ ″ becomes narrow, which is suitable for measures against noise (suppression of high-frequency current) in a narrow frequency range. The ratio of the component M11 is a bulk metal composed only of the component M11. 60 of saturation magnetization of magnetic material
% Or less and 35% or more of saturation magnetization has a much higher electric resistivity of about 500 μΩ · cm or more, so that the loss due to the eddy current is extremely small and the magnetic interaction between the components M11 is small. As a result, the thermal disturbance of the spin increases, and the frequency at which the natural resonance occurs fluctuates, and as a result, the magnetic loss term μ ″ shows a large value in a wide range. In a region where the ratio of the component M11 is smaller than an appropriate composition region, magnetic interaction between the components M11 hardly occurs, and the region becomes superparamagnetic.

Incidentally, when the magnetic loss material is disposed in the immediate vicinity of the electronic circuit to suppress the high-frequency current, the standard of the material design is a product μ ″ of the magnetic loss term μ ″ and the thickness δ of the magnetic loss material.
In order to obtain an effective suppression for a high-frequency current having a frequency of several hundreds of MHz, which is given by δ, approximately μ ″ · δ ≧ 10
00 (μm) is required. Therefore, a magnetic loss material of μ ″ = 1000 requires a thickness of 1 μm or more, and a material having low electric resistance that easily causes eddy current loss is not preferable, and the above-described material having an electric resistivity of 100 μΩ · cm or more is not preferable. Suitable composition region (a region in which the ratio of the composition component M11 shows a saturation magnetization of 80% or less of the saturation magnetization of the bulk metal magnetic material composed only of the composition component M11 and does not exhibit superparamagnetism. (A region exhibiting a saturation magnetization of 35% or more with respect to the saturation magnetization of the bulk metal magnetic material).

In the following, a granular magnetic loss material, which is a material required for obtaining the high-frequency current suppressors 3, 3 ', 3 "and the sheet-like high-frequency current suppressor 7 of each of the above embodiments, is sputtered. The process of producing several samples under different conditions according to the method will be specifically described, provided that:
In manufacturing each sample, a sputtering method applicable sample manufacturing apparatus as shown in FIG. 5A is used. This sample preparation apparatus to which the sputtering method is applied includes a substrate 23 and a composition XY or a composition X with a shutter 21 interposed in a vacuum vessel (chamber) 18 to which a gas supply device 22 and a vacuum pump 27 are connected. A chip 25 is provided facing a target 25 composed of a component M provided at a predetermined interval, and a high-frequency power supply (RF) 26 grounded to the support portion side of the chip 24 and the target 25 is connected. Made up of

(Sample 1) Here, an Ar gas is supplied into the vacuum vessel 18 by the gas supply device 22, and a vacuum degree of about 1.33 × 10
^In an Ar gas atmosphere kept at ^-4 Pa, a chip 25 is formed on a Fe disk having a diameter φ of 100 mm to be a target 25 = dimensions of 5 mm × 5 mm × 2 mm in thickness, and a total of 120 Al particles. _A magnetic thin film is formed on a glass substrate serving as the substrate 23 by a sputtering method under a condition where high frequency power is supplied from the high frequency power supply device 26 after the ₂ O ₃ chip is provided, and the obtained magnetic thin film is By performing a heat treatment in a vacuum magnetic field at a temperature condition of 300 ° C. for 2 hours, the above-mentioned sample 1 of the granular magnetic thin film was obtained.

When this sample 1 was analyzed by X-ray fluorescence, F
e ₇₂ Al ₁₁ O ₁₇ , a film thickness of 2.0 μm, a DC resistivity of 530 μΩ · cm, and an anisotropic magnetic field H _k of 1422.
A / m, the saturation magnetization M _s is 1.68 T (tesla),
A half-width value μ ″ ₅₀ (hereinafter also referred to as a half-width equivalent to a half-width standardized at the center frequency of a frequency band that is 50% or more of the maximum value μ ″ _max in the magnetic loss term μ ″ on the complex magnetic permeability characteristic) Is the same) is 148%, and a ratio value ΔM _s (M _s (M _s (M)) of the saturation magnetization M _s (M-X-Y) and the saturation magnetization M _s (M) of the metal magnetic material composed only of the component M M-X-Y)
/ M _s (M)｝ × 100% (the same applies hereinafter)
Was 72.2%.

Also, in order to verify the magnetic loss characteristics of the sample 1, the sample 1 is inserted into a detection coil in which the magnetic permeability μ characteristics with respect to the frequency f are processed into a strip shape, and the impedance is measured while applying a bias magnetic field. Based on this result, a magnetic loss term μ ″ characteristic (complex magnetic permeability characteristic) with respect to the frequency f was obtained.

FIG. 6 shows the frequency f (MHz) of the sample 1.
6 shows the characteristic of the magnetic loss term μ ″ (complex permeability property) with respect to. In FIG. 6, in the case of the magnetic loss term μ ″ of the sample 1, the dispersion is slightly steep and the peak value is very large. It can be seen that the resonance frequency is also high at around 700 MHz.

(Sample 2) Here, a sample 2 made of a granular magnetic thin film was prepared under exactly the same conditions and procedures as in the case where the above-mentioned sample 1 was manufactured, except that the number of Al ₂ O ₃ chips was changed to 150. Obtained.

When this sample 2 was subjected to fluorescent X-ray analysis, F
e ₄₄ Al ₂₂ O ₃₄ , a film thickness of 1.2 μm, a DC resistivity of 2400 μΩ · cm, and an anisotropic magnetic field H _k of 948.
0A / m, the saturation magnetization M _s is 0.96 T, the half-width value μ ″ ₅₀ is 181%, and the ratio value ΔM _s (M−X−Y)
/ M _s (M)｝ × 100% was 44.5%.

FIG. 7 shows the characteristic of the magnetic loss term μ ″ (complex permeability characteristic) with respect to the frequency f (MHz) of the sample 2. FIG. 7 shows the case of the magnetic loss term μ ″ of the sample 2. However, the dispersion is gentle due to thermal disturbance and spreads over a wide band, and the peak value is large as in the case of the sample 1. However, the value of the DC resistivity is much larger than that of the sample 1. It can be seen that the resonance frequency also has a peak near 1 GHz and shows excellent high frequency characteristics.

(Sample 3) Here, the first magnetic granular thin film was formed under exactly the same conditions and procedures as in Example 1 except that the number of Al ₂ O ₃ chips was changed to 90. Sample 3 as a comparative sample was obtained.

When this sample 3 was subjected to fluorescent X-ray analysis, F
e _{86 Al 6} O ₈ , a film thickness of 1.2 μm, a DC resistivity of 74 μΩ · cm, and an anisotropic magnetic field H _k of 1738 A
/ M, the saturation magnetization M _s is 1.88 T, and the ratio value ｛M _s
(M−X−Y) / M _s (M)｝ × 100% is 85.7%
Met.

FIG. 8 shows the magnetic loss term μ ″ characteristic (complex permeability characteristic) with respect to the frequency f (MHz) of the sample 3 (first comparative sample). In the case of the magnetic loss term μ ″ of the comparative sample (sample 3), the peak shows a large value reflecting the large saturation magnetization.
Since the resistance value is low, eddy current loss occurs with an increase in frequency, which causes deterioration of magnetic loss characteristics from a low frequency region, and the characteristics at high frequencies are deteriorated as compared with samples 1 and 2. It turns out that there is.

(Sample 4) Here, the second example of the granular magnetic thin film was manufactured under the same conditions and procedures as in Example 1 except that the number of Al ₂ O ₃ chips was changed to 200. Sample 4 serving as a comparative sample was obtained.

When this sample 4 was analyzed by X-ray fluorescence, F
It had a composition of e ₁₉ Al ₃₄ O ₄₇ , a film thickness of 1.3 μm, a DC resistivity of 10500 μΩ · cm, and a magnetic property showing superparamagnetic behavior.

Also in this sample 4 (second comparative sample), an attempt was made to obtain a magnetic loss term μ ″ characteristic (complex magnetic permeability characteristic) with respect to the frequency f. Although the resistance value is very large due to the large size, the magnetic interaction between the magnetic particles is very small due to the small number of phases responsible for magnetism, resulting in superparamagnetic behavior and no observation. It turns out.

From these results, it can be seen that the magnetic materials made of the granular magnetic thin films of Samples 1 and 2 exhibit extremely large magnetic loss characteristics in a narrow band only in the high frequency region, and are extremely effective as high frequency current suppressors.

(Sample 5) Here, the gas supply device 22 supplies Ar + N ₂ gas into the vacuum vessel 18 and the vacuum pump 27 evacuates the interior of the vacuum vessel 18 to a degree of vacuum of about 1.3.
In the Ar + N ₂ gas atmosphere maintained at 3 × 10 ⁻⁴ Pa, Fe having a diameter φ = 100 mm to be the target 25 is used.
Size of chip 24 on a circular plate = 5 mm long x 5 mm wide
X After a magnetic thin film is formed on a glass substrate serving as the substrate 23 by a reactive sputtering method under a condition where a total of 120 Al chips having a thickness of 2 mm are provided and high-frequency power is supplied by the high-frequency power supply device 26. The resulting magnetic thin film is placed in a vacuum magnetic field at a temperature of 300 ° C. for 2 hours.
By subjecting the composition to a heat treatment for a long time, a sample 5 made of a granular magnetic thin film having a composition different from that described above was obtained.

When the dimensions and magnetic characteristics of this sample 5 were examined, the film thickness was 1.5 μm, and the ratio value ΔM _s (M−
X−Y) / M _s (M)｝ × 100% is 51.9%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 520,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 520
Was 830 MHz, and the half-width value μ ″ ₅₀ was found to be 175%.

(Sample 6) Here, Ar gas is supplied into the vacuum vessel 18 by the gas supply device 22, and the degree of vacuum of about 1.33 × 10
^In an Ar gas atmosphere maintained at ^-4 Pa, a chip 25 is formed on a Fe disk having a diameter φ = 100 mm to be the target 25 = 5 mm × 5 mm × 2 mm in thickness. _A magnetic thin film is formed on a glass substrate serving as the substrate 23 by a sputtering method under a condition where high frequency power is supplied from the high frequency power supply device 26 after the ₂ O ₃ chip is provided, and the obtained magnetic thin film is A heat treatment was performed for 2 hours in a vacuum magnetic field at a temperature of 300 ° C. to obtain a sample 6 of a granular magnetic thin film.

When the dimensions and magnetic characteristics of this sample 6 were examined, the film thickness was 1.1 μm, and the ratio value ΔM _s (M−
XY) / M _s (M)｝ × 100% is 64.7%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 850,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 850
Was 800 MHz, and the half-width value μ ″ ₅₀ was found to be 157%.

(Sample 7) Here, Ar + N with a partial pressure of N ₂ of 10% was introduced into the vacuum vessel 18 by the gas supply device 22.
₂ gas is supplied, and the vacuum
In a Ar + N ₂ gas atmosphere maintained at a degree of vacuum of about 1.33 × 10 ⁻⁴ Pa, the size of the chip 24 on a Co disk having a diameter φ = 100 mm to become the target 25 is 5 mm × length. 170 A in total of 5 mm wide x 2 mm thick
Under the condition that high frequency power is supplied by the high frequency power supply device 26 with the l chip disposed, a magnetic thin film is formed on a glass substrate serving as the substrate 23 by a reactive sputtering method, and the obtained magnetic thin film is Temperature condition 30
Heat treatment was performed for 2 hours in a vacuum magnetic field of 0 ° C. to obtain a sample 7 made of a granular magnetic thin film.

When the dimensions and magnetic characteristics of this sample 7 were examined, the film thickness was 1.2 μm, and the ratio value ΔM _s (M−
XY) / M _s (M)｝ × 100% is 37.2%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 350,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 350
Was 1 GHz, and the half-width value μ ″ ₅₀ was found to be 191%.

(Sample 8) Here, an Ar gas is supplied into the vacuum vessel 18 by the gas supply device 22 and the degree of vacuum of about 1.33 × 10
^In an Ar gas atmosphere maintained at ⁻⁴ Pa, a chip 24 is formed on a Ni disk having a diameter φ = 100 mm serving as a target 25 = dimensions of 5 mm × 5 mm × 2 mm in thickness of 140 Al in total. _A magnetic thin film is formed on a glass substrate serving as the substrate 23 by a sputtering method under a condition where high frequency power is supplied from the high frequency power supply device 26 after the ₂ O ₃ chip is provided, and the obtained magnetic thin film is Heat treatment was performed in a vacuum magnetic field at a temperature of 300 ° C. for 2 hours to obtain a sample 8 of a granular magnetic thin film.

When the dimensions and magnetic characteristics of this sample 8 were examined, the film thickness was 1.7 μm and the ratio value ΔM _s (M−
X−Y) / M _s (M)｝ × 100% is 58.2%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 280,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 280
Was found to be 240 MHz, and the half-width value μ ″ ₅₀ was found to be 169%.

(Sample 9) Here, Ar + N with a partial pressure of N ₂ of 10% was introduced into the vacuum vessel 18 by the gas supply device 22.
₂ gas is supplied, and the vacuum
In the Ar + N ₂ gas atmosphere, the inside of 8 was maintained at a degree of vacuum of about 1.33 × 10 ⁻⁴ Pa, and the size of the chip 24 on the Ni disk having the diameter φ = 100 mm as the target 25 was 5 mm × length. A total of 100 pieces of 5 mm wide x 2 mm thick
Under the condition that high frequency power is supplied by the high frequency power supply device 26 with the l chip disposed, a magnetic thin film is formed on a glass substrate serving as the substrate 23 by a reactive sputtering method, and the obtained magnetic thin film is Temperature condition 30
A sample 9 of a granular magnetic thin film was obtained by performing a heat treatment in a vacuum magnetic field of 0 ° C. for 2 hours.

When the dimensions and magnetic characteristics of this sample 9 were examined, the film thickness was 1.3 μm and the ratio value ΔM _s (M−
XY) / M _s (M)｝ × 100% is 76.2%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 410,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 410
Was found to be 170 MHz, and the half-width value μ ″ ₅₀ was found to be 158%.

(Sample 10) Here, the gas supply device 22
To supply the Ar gas into the vacuum vessel 18, and the vacuum pump 27 evacuates the inside of the vacuum vessel 18 to a degree of vacuum of about 1.33 × 1.
In an Ar gas atmosphere maintained at 0 ^-4 Pa, a chip 24 is formed on a Fe disk having a diameter of φ = 100 mm to be a target 25 in the Ar gas atmosphere = length 5 mm × width 5 mm × thickness 2 mm.
A magnetic thin film is formed on a glass substrate serving as the substrate 23 by a sputtering method under a condition in which a total of 150 TiO ₃ chips are provided and high frequency power is supplied by the high frequency power supply device 26, and then obtained. The magnetic thin film thus obtained was subjected to a heat treatment in a vacuum magnetic field at a temperature condition of 300 ° C. for 2 hours to obtain a sample 10 of a granular magnetic thin film.

When the dimensions and magnetic characteristics of this sample 10 were examined, the film thickness was 1.4 μm, and the ratio value ΔM _s (M
−XY) / M _s (M)｝ × 100% is 43.6%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 920,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 920
Was 1.5 GHz, and the half-width value μ ″ ₅₀ was found to be 188%.

(Sample 11) Here, the gas supply device 22
To make the O ₂ partial pressure 15% into the vacuum vessel 18 by Ar +
O ₂ gas is supplied, and a target 25 is made of Fe having a diameter φ = 100 mm in an Ar + O ₂ gas atmosphere in which the vacuum chamber 18 is maintained at a degree of vacuum of about 1.33 × 10 ⁻⁴ Pa by a vacuum pump 27. Reactive sputtering is performed under the condition that a total of 130 Si chips having dimensions of 5 mm × 5 mm × 2 mm in thickness to become the chip 24 on a circular plate are provided and high-frequency power is supplied by the high-frequency power supply device 26. After a magnetic thin film is formed on a glass substrate serving as the substrate 23 by a method, the obtained magnetic thin film is subjected to a heat treatment in a vacuum magnetic field at a temperature condition of 300 ° C. for 2 hours to obtain a sample 11 made of a granular magnetic thin film. Was.

When the dimensions and magnetic characteristics of this sample 11 were examined, the film thickness was 1.5 μm, and the ratio value ΔM _s (M
−XY) / M _s (M)｝ × 100% is 55.2%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 920,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 920
Was found to be 1.2 GHz, and the half-width value μ ″ ₅₀ was found to be 182%.

(Sample 12) Here, the gas supply device 22
To supply the Ar gas into the vacuum vessel 18, and the vacuum pump 27 evacuates the inside of the vacuum vessel 18 to a degree of vacuum of about 1.33 × 1.
In an Ar gas atmosphere maintained at 0 ^-4 Pa, a chip 24 is formed on a Fe disk having a diameter of φ = 100 mm to be a target 25 in the Ar gas atmosphere = length 5 mm × width 5 mm × thickness 2 mm.
Under the condition that a total of 100 HfO ₃ chips are provided and high-frequency power is supplied by the high-frequency power supply device 26, a magnetic thin film is formed on a glass substrate serving as the substrate 23 by a sputtering method, and then obtained. The magnetic thin film thus obtained was subjected to a heat treatment in a vacuum magnetic field at a temperature condition of 300 ° C. for 2 hours to obtain a sample 12 of a granular magnetic thin film.

When the dimensions and magnetic properties of this sample 12 were examined, the film thickness was 1.8 μm, and the ratio value ΔM _s (M
−XY) / M _s (M)｝ × 100% is 77.4%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 1800, and the frequency at the maximum value μ ″ _max = 1800 f (μ ″
_max ) is 450 MHz and the half-width value μ ″ ₅₀ is 171%
It turned out to be.

(Sample 13) Here, the gas supply device 22
To supply the Ar gas into the vacuum vessel 18, and the vacuum pump 27 evacuates the inside of the vacuum vessel 18 to a degree of vacuum of about 1.33 × 1.
In an Ar gas atmosphere maintained at 0 ^-4 Pa, a chip 24 is formed on a Fe disk having a diameter of φ = 100 mm to be a target 25 in the Ar gas atmosphere = length 5 mm × width 5 mm × thickness 2 mm.
Under the condition that high-frequency power is supplied by the high-frequency power supply device 26 after a total of 130 BN chips are provided,
After forming a magnetic thin film on a glass substrate serving as the substrate 23 by a sputtering method, the resulting magnetic thin film is subjected to a heat treatment in a vacuum magnetic field at a temperature condition of 300 ° C. for 2 hours to obtain a sample 13 of a granular magnetic thin film. Obtained.

When the dimensions and magnetic properties of this sample 13 were examined, the film thickness was 1.9 μm, and the ratio value ΔM _s (M
−XY) / M _s (M)｝ × 100% is 59.3%, the maximum value μ ″ _max of the magnetic loss term μ ″ is 950,
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 950
Was 680 MHz, and the half-width value μ ″ ₅₀ was found to be 185%.

(Sample 14) Here, the gas supply device 22
Supply Ar gas into the vacuum vessel 18 by
The vacuum inside the vacuum vessel 18 is about 1.33 × 1 by the empty pump 27.
0^-FourTarget in an Ar gas atmosphere maintained to be Pa
Fe having a diameter φ = 100 mm to be a cut 25 ₅₀Co₅₀Circle
Dimensions to become chip 24 on board = 5mm long x 5mm wide x thickness
130mm Al in total of 2mm_TwoO_ThreeDeployed chips
The high frequency power supplied by the high frequency power supply 26
Under the above conditions, the substrate 23 is formed by a sputtering method.
After forming a magnetic thin film on a glass substrate,
For 2 hours in a vacuum magnetic field at a temperature of 300 ° C
Due to granular magnetic thin film by heat treatment
Sample 14 was obtained.

When the dimensions and magnetic characteristics of this sample 14 were examined, the film thickness was 1.6 μm, and the ratio value ΔM _s (M
−XY) / M _s (M)｝ × 100% is 59.3%, and the maximum value μ ″ _max of the magnetic loss term μ ″ is 720;
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 720
Was found to be 1.1 GHz, and the half-width value μ ″ ₅₀ was found to be 180%.

Next, a process of manufacturing a granular magnetic loss material as a sample by a vapor deposition method will be specifically described. However, in preparing each sample, a sample manufacturing apparatus to which an evaporation method is applied as shown in FIG. 5B is used. This sample preparation apparatus to which the vapor deposition method is applied includes a vacuum container (chamber) 19 to which a gas supply device 22 and a vacuum pump 27 are connected.
A substrate 23 and a crucible 28 filled with an alloy base material of the composition XY are provided facing each other with a shutter 21 interposed therebetween.

(Sample 15) Here, the gas supply device 22
Is supplied into the vacuum vessel 18 at a flow rate of 3.0 sccm, and the Fe charged in the crucible 28 is maintained by the vacuum pump 27 while keeping the inside of the vacuum vessel 18 at a degree of vacuum of about 1.33 × 10 ⁻⁴ Pa. Under a condition where the ₇₀ Al ₃₀ alloy base material is dissolved and exposed to oxygen, a magnetic thin film is formed on a glass substrate serving as the substrate 23 by a vapor deposition method, and the obtained magnetic thin film is heated at a temperature of 300 ° C. 2 in a vacuum magnetic field
By subjecting the sample to a heat treatment for a long time, a sample 15 of a granular magnetic thin film was obtained.

When the dimensions and magnetic properties of this sample 15 were examined, the film thickness was 1.1 μm, and the ratio value ΔM _s (M
−XY) / M _s (M)｝ × 100% is 41.8%, and the maximum value μ ″ _max of the magnetic loss term μ ″ is 590;
Frequency f (μ ″ _max ) at its maximum value μ ″ _max = 590
Was 520 MHz, and the half-width value μ ″ ₅₀ was found to be 190%.

Any of the above-mentioned samples 1 to 15 other than samples 3 and 4, which are comparative samples, are all effective as materials used for countermeasures against high-frequency current in electronic components. still,
Each of the samples 1 to 15 has been described as an example manufactured by a sputtering method or a vacuum evaporation method. However, as described above, another manufacturing method such as an ion beam evaporation method or a gas deposition method may be used. The production method is not limited as long as the method can be realized. Also, it has been described that each of the samples 1 to 15 is obtained by performing a heat treatment in a vacuum magnetic field after forming the film. Post-processing is not limited to the case described.

Next, as an example of each of the samples 1 to 15,
6 has a complex number permeability characteristic shown in FIG.
Sample 1 (half-width, 0 μm square having a side of 20 mm)
Value μ ″ ₅₀= 148%), the magnetic loss term μ ″
Maximum value μ ″_maxIs about 1800 around 700 MHz.
However, on the other hand, as a comparative sample according to another prior art,
The same consisting of prepared sendust powder and polymer
Comparative sample with composite magnetic sheet of similar shape in area
(Half-width value μ ″₅₀= 196%), the magnetic loss term
The maximum value of μ ″ μ ″_maxIs about 3.0 around 700MHz
there were.

As a result, the magnetic loss term μ ″ of the sample 1 shows dispersion in the quasi-microwave band, and its magnitude is around 1800 at around 700 MHz, and the maximum value μ ″ _max is about 1800. The ratio is about 600 times larger than the maximum value μ ″ _max of the comparative sample showing the dispersion, and the ratio of the half-width value μ ″ _{50 to} the center frequency is smaller than that of the comparative sample, indicating a narrow band. .

Further, a verification experiment was conducted on the high-frequency current suppressing effect of the sample 1 and the comparative sample (composite magnetic material sheet) using a high-frequency current suppressing effect measuring device 30 as shown in FIG. However, the high-frequency current suppression effect measuring device 30 is for connecting the microstrip line 31 to a network analyzer (HP8753D) (not shown) on both sides in the longitudinal direction of the microstrip line 31 having a line length of 75 mm and a characteristic impedance Zc = 50Ω. By disposing the coaxial line 32 and arranging the magnetic sample 33 right above the sample arranging portion 31a of the microstrip line 31,
The transmission characteristic (magnetic permeability characteristic) between two ports can be measured.

As in the configuration of the high-frequency current suppression effect measuring device 30, when a high-frequency current is suppressed by arranging a magnetic loss material near the transmission line and imparting an equivalent resistance component to the transmission line, The magnitude of the suppression effect of the high-frequency current is the product μ ″ of the magnitude of the magnetic loss term μ ″ and the thickness δ of the magnetic body.
Since it is considered to be substantially proportional to δ, when comparing the suppression effect between Sample 1 and the comparative sample (composite magnetic material sheet), the magnetic loss term in the comparative sample is such that the value of the product μ ″ · δ is in the same order. μ ″ is about 3, and the thickness δ of the magnetic material is 1.
0 mm.

FIG. 10 shows a high-frequency current suppression effect measuring device 3
Transmission S ₂₁ (dB) for frequency f (MHz) indicating the result of measuring the high-frequency current suppression effect of the sample magnetic material with 0
FIG. 7A shows the characteristics, and FIG. 7B shows the characteristics of a comparative sample (composite magnetic sheet) according to the prior art.

10 (a) and 10 (b), the transmission S ₂₁ characteristic of the sample 1 decreases from 100 MHz or more to 2G.
Hz near contrast has increased after showing the minimum value of -10 dB, when the transmission S ₂₁ characteristics of the comparison sample, the number 100
The frequency decreases monotonically from MHz to show about −10 dB at 3 GHz. From these results, the transmission S ₂₁ characteristic depends on the dispersion of the magnetic loss term μ ″ of the magnetic material, and the magnitude of the suppression effect is as described above. It can be seen that it depends on the product μ ″ · δ.

By the way, as shown in FIG. 11, it is assumed that the magnetic material such as the sample 1 and the comparative sample has a dimension 1 and is configured as a distributed constant line having a magnetic permeability μ and a dielectric constant ε. In this case, the inductance ΔL and the resistance ΔR are connected in series as equivalent circuit constants per unit length (Δl), and the capacitance ΔC and the conductance ΔG (the resistance ΔR When these are converted to the sample size 1 based on the transmission S21 characteristic, the inductance L,
Resistance R, capacitance C, conductance G (resistance R
(The reciprocal of the above).

When the magnetic material is disposed on the microstrip line 31 as in the examination of the effect of suppressing the high-frequency current, the change in the transmission S ₂₁ characteristic is mainly added in series with the inductance L in the equivalent circuit. Since it depends on the component of the resistor R, the value of the resistor R can be obtained and its frequency dependence can be examined.

FIG. 12 is a graph showing the resistance R with respect to the frequency f calculated based on the value of the resistor R added in series to the inductance L of the equivalent circuit shown in FIG. 11 in the transmission S ₂₁ characteristic shown in FIG. FIG. 4A shows the characteristics of the sample 1 and FIG. 4B shows the characteristics of a comparative sample (composite magnetic sheet) according to the prior art.

12 (a) and 12 (b), the resistance value R monotonically increases in the quasi-microwave band region in any case, and
At GHz, it is several tens of Ω, and it can be seen that the frequency dependence tends to be different from the frequency dispersion of the magnetic loss term μ ″ having a maximum near 1 GHz. In addition, it is considered that the result reflects that the ratio of the sample size to the wavelength monotonically increases.

From the above results, the sample exhibiting the magnetic loss term μ ″ dispersion in the quasi-microwave band exhibits the same high-frequency current suppressing effect as the comparative sample (composite magnetic sheet) having a thickness of about 500 times. It can be said that it is effective to apply to a high-frequency current countermeasure in an electronic component such as a semiconductor active element that operates with a high-speed clock near 1 GHz.

[0099]

As described above, according to the high-frequency current suppressing type electronic component of the present invention, the high-frequency current flowing through the terminal itself is supplied to some or all of the predetermined number of terminals provided in the electronic component. Providing a high frequency current suppressor to attenuate,
Alternatively, some or all of the predetermined number of terminals themselves are similar high-frequency current suppressors.
Even when used at a high frequency in the z to several GHz band, the high-frequency current suppressor sufficiently attenuates the high-frequency current,
Electromagnetic interference can be prevented from occurring and its adverse effects can be eliminated. Accordingly, the semiconductor active device is a semiconductor active device which tends to operate at a higher speed using a higher frequency in the future, particularly as an electronic component, and furthermore, a semiconductor integrated circuit device (IC) or a semiconductor in which high integration and high density during mounting cannot be avoided. High-frequency current suppression for terminals of large-scale integrated circuit (LSI) or logic circuit elements represented by microprocessor (MPU), central processing unit (CPU), image processor arithmetic and logic unit (IPALU), etc. If the body is provided, it becomes possible to effectively take measures against high-frequency current suppression (measures against electromagnetic interference).

[Brief description of the drawings]

FIG. 1 shows a basic configuration of a semiconductor integrated circuit device 1 according to an embodiment of a high-frequency current suppression type electronic component of the present invention. FIG. FIG. 2B is a side view in which a main part is enlarged and a part is sectioned.

FIG. 2 is an enlarged view of a main part of a basic structure of a semiconductor integrated circuit element according to another embodiment of the high frequency current suppression type electronic component of the present invention mounted on a printed circuit board, and showing a part of the cross section. 4A is a side view showing the case where the form of the high-frequency current suppressor provided at the terminal of the semiconductor integrated circuit element is changed, and FIG. 4B is the case where the form of the terminal itself of the semiconductor integrated circuit element is changed; It is about.

FIG. 3 shows a basic configuration of a semiconductor integrated circuit device according to another embodiment of the high-frequency current suppressing type electronic component of the present invention, wherein (a) shows a state in which the component is mounted on a printed circuit board. FIG. 2B is a side view in which a main part is enlarged and a part is sectioned.

FIG. 4 schematically shows a basic structure of a granular magnetic material which is a high-frequency current suppressing material used in the semiconductor integrated circuit device shown in FIGS.

5A and 5B show a basic configuration of a device used for producing a sample of the granular magnetic material described with reference to FIGS. 4A and 4B, wherein FIG. The present invention relates to a sample preparation apparatus to which an evaporation method can be applied.

6 shows a magnetic loss term characteristic (complex magnetic permeability characteristic) with respect to a frequency of a sample 1 manufactured using the sputtering method applicable sample manufacturing apparatus shown in FIG. 5 (a).

FIG. 7 shows a magnetic loss term characteristic (complex magnetic permeability characteristic) with respect to a frequency of a sample 2 manufactured by using the sputtering method applicable sample manufacturing apparatus shown in FIG. 5 (a).

8 shows a magnetic loss term characteristic (complex magnetic permeability characteristic) with respect to the frequency of a sample 3 (first comparative sample) manufactured using the sputtering method applicable sample manufacturing apparatus shown in FIG. 5 (a). is there.

9A and 9B are diagrams for measuring the high-frequency current suppression effect of each sample manufactured using the sputtering method-applied sample manufacturing apparatus illustrated in FIG. 5A and the vapor deposition method-based sample manufacturing apparatus illustrated in FIG. 5B. It is the perspective view which showed the basic structure of the high frequency electric current suppression effect measuring device.

10 is a graph showing transmission characteristics with respect to frequency, showing the results of measuring the high-frequency current suppression effect of the sample magnetic material using the high-frequency current suppression effect measurement device shown in FIG. 9;
(A) relates to sample 1 and (b) relates to a comparative sample (composite magnetic sheet) according to the prior art.

FIG. 11 shows the sample 1 shown in FIG.
FIG. 5B schematically shows the transmission characteristics of the magnetic material including the comparative sample shown in FIG. 6B as an equivalent circuit.

12 shows resistance value characteristics with respect to frequency calculated based on the resistance added in series to the inductance of the equivalent circuit shown in FIG. 11 in the transmission characteristics shown in FIG. 10, and FIG. Is for sample 1,
(B) is a comparative sample (composite magnetic sheet) according to the prior art.
It is about.

[Explanation of symbols]

 1, 1 ', 1 "semiconductor integrated circuit (IC) 2, 2', 2" terminal 2a terminal exposed portion 3, 3 ', 3 "high frequency current suppressor 4 printed wiring circuit board 5 conductive pattern 6 solder 7 sheet shape High frequency current suppressor 11 Composition M 12 Composition XY 18, 19 Vacuum container (chamber) 21 Shutter 22 Gas supply device 23 Substrate 24 Chip 25 Target 26 High frequency power supply (RF) 27 Vacuum pump 28 Crucible 30 High frequency current suppression Effect measurement device 31 Microstrip line 31a Sample placement part 32 Coaxial line 33 Magnetic sample

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Ono 6-7-1, Koriyama, Taishiro-ku, Sendai-shi, Miyagi Prefecture F-term (reference) 5E049 AA01 AA04 AA07 AA09 AC00 BA11 5E070 AA01 AB03 AB10 BA16 BA20 BB01 CA07 DB01 DB10 5F067 AA00 BC00 CD00

Claims (25)

[Claims] 1. An electronic component having a predetermined number of terminals provided for signal processing, wherein some or all of the predetermined number of terminals have tens of MHz to several GH flowing through the terminals themselves.
A high-frequency current suppression type electronic component, comprising: a high-frequency current suppressor that attenuates a high-frequency current in a z-band. 2. The high-frequency current suppression type electronic component according to claim 1, wherein the high-frequency current suppression body mounts at least the electronic component on a part or all of the surface of the predetermined number of terminals. A high-frequency current suppression type electronic component provided at a location other than a mounting portion mounted on the circuit board and an end including a connection portion to a conductive pattern provided on the circuit board. 3. The high-frequency current suppressing type electronic component according to claim 1, wherein the high-frequency current suppressing body has a frequency of at least several tens of MHz near a mounting portion mounted on a circuit board for mounting the electronic component. A high-frequency current suppression type electronic component, which exhibits conductivity in a frequency band of use less than. 4. The high-frequency current suppressing type electronic component according to claim 1, wherein the high-frequency current suppressing body has a surface that is part or all of the predetermined number of terminals by a sputtering method. A high-frequency current suppression type electronic component characterized by being formed on a film. 5. The high-frequency current suppressing type electronic component according to claim 1, wherein the high-frequency current suppressing body is partially or entirely formed on the surface of the predetermined number of terminals by a vapor deposition method. A high-frequency current suppression type electronic component characterized by being formed on a film. 6. The high-frequency current suppressing type electronic component according to claim 4, wherein the high-frequency current suppressing body is partially or entirely on a metal base material plate used in a process of manufacturing the predetermined number of terminals in advance. A high-frequency current suppression type electronic component characterized by being formed on a substrate. 7. The high-frequency current suppressing type electronic component according to claim 4, wherein the high-frequency current suppressing body cuts out a metal base material plate used in a manufacturing process of the predetermined number of terminals and cuts the predetermined number of metal base plates. A high-frequency current suppression type electronic component, which is formed on a part or all of the surfaces formed as terminals. 8. An electronic component having a predetermined number of terminals provided for signal processing, wherein some or all of the predetermined number of terminals exhibit conductivity in a working frequency band of less than several tens of MHz. , Several tens MHz to several GHz flowing through the terminal itself
A high-frequency current suppression type electronic component comprising a high-frequency current suppressor that attenuates a high-frequency current in a band. 9. The high-frequency current suppression type electronic component according to claim 8, wherein said high-frequency current suppression body is manufactured by a sputtering method. 10. The high-frequency current suppression type electronic component according to claim 8, wherein said high-frequency current suppression body is manufactured by a vapor deposition method. 11. The high-frequency current suppression type electronic component according to claim 1, wherein the high-frequency current suppression body has a thickness in a range of 0.3 to 20 (μm). Characterized high-frequency current suppression type electronic components. 12. The high-frequency current suppressing electronic component according to claim 1, wherein said high-frequency current suppressing body is a thin-film magnetic material. 13. The high-frequency current suppressing type electronic component according to claim 1, wherein the high-frequency current suppressing body has a composition M (where M is at least one of Fe, Co, and Ni). ), Y (where Y is at least one of F, N, and O), and X (where X is at least one of the elements other than the elements contained in M and Y). A magnetic loss material of the XY system, wherein the maximum value μ ″ _max of the imaginary part μ ″ on the complex magnetic permeability characteristic in which the imaginary part μ ″ relative to the real part μ ′ in the magnetic permeability characteristic is shown in relation to frequency. Exists in a frequency range of 100 MHz to 10 GHz, and the maximum value μ ″ in the imaginary part μ ″.
A half-width value μ ″ ₅₀ corresponding to a half-width obtained by standardizing a frequency band that is 50% or more of _max with the center frequency of the frequency band.
A high-frequency current suppression type electronic component, comprising a narrow band magnetic loss material having a ratio of less than 200%. 14. The high-frequency current suppression type electronic component according to claim 13, wherein the narrow band magnetic loss material has a saturation magnetization of 80 to 60 (80 to 60) of the saturation magnetization of a metal magnetic material including only the composition M. %) In the range of (%). 15. The high-frequency current suppression type electronic component according to claim 13, wherein the narrow band magnetic loss material comprises:
A high-frequency current suppression type electronic component having a DC electric resistivity in a range of 100 to 700 (μΩ · cm). 16. The high-frequency current suppressing type electronic component according to claim 1, wherein the high-frequency current suppressing body has a composition M (where M is at least one of Fe, Co, and Ni). ), Y (where Y is at least one of F, N, and O), and X (where X is at least one of the elements other than the elements contained in M and Y). A magnetic loss material of the XY system, wherein the maximum value μ ″ _max of the imaginary part μ ″ on the complex magnetic permeability characteristic in which the imaginary part μ ″ relative to the real part μ ′ in the magnetic permeability characteristic is shown in relation to frequency. Exists in a frequency range of 100 MHz to 10 GHz, and the maximum value μ ″ in the imaginary part μ ″.
A half-width value μ ″ ₅₀ corresponding to a half-width obtained by standardizing a frequency band that is 50% or more of _max with the center frequency of the frequency band.
A high-frequency current-suppressing electronic component, comprising a broadband magnetic loss material having a ratio of not less than 150%. 17. The high-frequency current suppressing type electronic component according to claim 16, wherein the magnitude of the saturation magnetization of the broadband magnetic loss material is 60 to 35% (%) of the saturation magnetization of the metal magnetic material including only the composition M. A high-frequency current suppression type electronic component characterized by being in the range of (1). 18. The high-frequency current suppressing type electronic component according to claim 16, wherein the broadband magnetic loss material comprises:
A high-frequency current suppression type electronic component having a DC electric resistivity of more than 500 μΩ · cm. 19. The high-frequency current suppression type electronic component according to claim 13, wherein said narrow band magnetic loss material or said wide band magnetic loss material has the composition X
Are C, B, Si, Al, Mg, Ti, Zn, Hf, S
A high-frequency current suppression type electronic component, which is at least one of r, Nb, Ta, and a rare earth element. 20. The high-frequency current suppressing type electronic component according to claim 13, wherein the narrow band magnetic loss material or the wide band magnetic loss material has the composition component M.
Is present in a granular form dispersed in a matrix of the compound of the composition X and the composition Y. 21. The high-frequency current suppressing type electronic component according to claim 20, wherein the narrow band magnetic loss material or the wide band magnetic loss material has an average particle diameter of the particles having the granular form of 1 to 40 (nm). A high-frequency current suppression type electronic component characterized by being in the range of (1). 22. The high-frequency current suppressing electronic component according to claim 13, wherein the narrow band magnetic loss material or the wide band magnetic loss material has an anisotropic magnetic field of 47400 A / m or less. A high-frequency current suppression type electronic component, comprising: 23. The high-frequency current suppression type electronic component according to claim 13, wherein the M-X-Y
The system is a high frequency current suppression type electronic component, wherein the system is an Fe-Al-O system. 24. The high-frequency current suppressing type electronic component according to claim 12, wherein said M-X-Y
The system is a high-frequency current suppression type electronic component, wherein the system is an Fe-Si-O system. 25. The high-frequency current suppression type electronic component according to claim 1, wherein the electronic component comprises:
A high-frequency current suppression type electronic device characterized by being a semiconductor active device used in a high frequency band and operating at high speed, and being any one of a semiconductor integrated circuit device, a semiconductor large-scale integrated circuit device, and a logic circuit device. parts.