JP2001290273A - Positive photoresist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a positive photoresist composition having satisfactory sensitivity and resolving power and excellent in PED stability in the formation of a contact hole pattern in the production of a semiconductor device. SOLUTION: The positive photoresist composition contains a resin containing specified silicon-containing repeating units and repeating units each having a specified acid decomposable group and having solubility in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiation with active light or radiation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photoresist composition used for manufacturing semiconductor integrated circuit elements, masks for manufacturing integrated circuits, printed wiring boards, liquid crystal panels, and the like. The present invention relates to a positive photoresist composition having sufficient sensitivity and resolution in forming a hole pattern. further,
The present invention relates to a positive photoresist composition having excellent PED stability. Here, PED (Post Exposure Dela
y) Stability refers to the stability of a coating film when the resist composition applied to a silicon wafer is left under a high vacuum in an exposure apparatus from after the exposure until a heating operation is performed.

[0002]

2. Description of the Related Art As a pattern forming method for manufacturing electronic components such as a semiconductor device, a magnetic bubble memory, and an integrated circuit, a method utilizing a photoresist which is sensitive to ultraviolet light or visible light has been widely used. Have been. There are two types of photoresist: a negative type, in which the irradiated part is insoluble in the developer by light irradiation, and a positive type, in which the exposed part is solubilized.The negative type has higher sensitivity than the positive type and is necessary for wet etching. Until recently, photoresists occupied the mainstream because of their excellent adhesion to substrates and chemical resistance.

However, with the increase in density and integration of semiconductor devices and the like, the line width and spacing of patterns have become extremely small.
In addition, since dry etching has been adopted for etching the substrate, photoresists have been desired to have high resolution and high dry etching resistance,
At present, positive photoresists occupy the majority. Further, in recent years, as electronic devices have become multifunctional and sophisticated, there has been a strong demand for finer patterns to achieve higher density and higher integration.

That is, since the vertical dimension of the integrated circuit is not much reduced as compared with the horizontal dimension of the integrated circuit, the ratio of the height to the width of the resist pattern has to be increased. For this reason, it has become more difficult to suppress the dimensional change of the resist pattern on a wafer having a complicated step structure as the pattern becomes finer. Further, in various types of exposure methods, there is a problem with the reduction of the minimum size. For example,
In light exposure, the interference effect of reflected light due to the step of the substrate has a great effect on dimensional accuracy, whereas in electron beam exposure, the proximity effect caused by backscattering of electrons causes the fine resist pattern The height to width ratio can no longer be increased.

It has been found that many of these problems are eliminated by using a multilayer resist system. For a description of multilayer resist systems, see Solid State Technology, 74 (1981) [Solid State Technolog
y, 74 (1981)], but many other studies on this system have been published. Generally, a multilayer resist method includes a three-layer resist method and a two-layer resist method. In the three-layer resist method, an organic flattening film is applied on a stepped substrate, an inorganic intermediate layer and a resist are stacked thereon, and the resist is patterned. Then, the inorganic intermediate layer is dry-etched using the resist as a mask. This is a method of patterning an organic flattening film by O2 RIE (reactive ion etching) using the inorganic intermediate layer as a mask. Basically, this method has been studied from an early stage because conventional techniques can be used, but the process is very complicated, or the organic film, the inorganic film, and the organic film have different three-layer physical properties. The problem is that cracks and pinholes are likely to occur in the intermediate layer due to the overlapping of the objects.

In contrast to the three-layer resist method, the two-layer resist method uses a resist having both properties of the resist and the inorganic intermediate layer in the three-layer resist method, that is, a resist having oxygen plasma resistance. In addition, the generation of cracks and pinholes is suppressed, and the process is simplified because the number of layers is reduced from three to two. However, in the three-layer resist method, a conventional resist can be used as the upper resist, whereas in the two-layer resist method, there is a problem that a new resist having oxygen plasma resistance has to be developed.

[0007] From the above background, it has excellent oxygen plasma resistance which can be used as an upper layer resist such as a two-layer resist method.
There has been a demand for the development of a high-sensitivity, high-resolution positive photoresist, in particular, an alkali developing type resist that can be used without changing the current process.

Further, in the manufacture of VLSI, which requires processing of an ultrafine pattern having a line width of half a micron or less, the wavelength used by an exposure apparatus used for lithography has been shortened, and now a KrF excimer laser beam is used. The use of ArF excimer laser light has been studied. In such short wavelength optical lithography, a resist generally called a chemically amplified type is used. In particular, when an ArF excimer laser beam is used, it is not appropriate to introduce a phenol structure into a binder resin, which is a main component of the resist, from the viewpoint of optical transparency of the film. In general, a resin polymer containing, as an image-forming portion, a structure capable of decomposing with an acid to generate a carboxylic acid, such as an ester, a 1-alkyladamantyl ester, or a THP-protected carboxylic acid, is used as a binder. A Si-containing polymer containing an image-forming portion transparent to ArF excimer laser light is disclosed in, for example,
60623, JP-A-10-324748, JP-A-11-124
60733 and JP-A-11-60734.

[0009] SPIE, Vol.
A chemically amplified resist using a vinyl polymer containing a tris (trimethylsilyl) silylethyl group at an acid-decomposable ester terminal is disclosed. Also, SPIE, 3rd
Volume 678, pp. 214 and 562, disclose a chemically amplified resist using a vinyl polymer containing trimethyl-bis (trimethylsilyl) disilaheptylmethylpropyl ester at the terminal of an acid-decomposable ester.

In the manufacture of semiconductor devices, apart from the purpose of forming fine line widths, the size of holes through which metal for electrodes of semiconductor devices is passed to the semiconductor surface, that is, the form of contact holes, has been miniaturized. There is a need for a suitable positive photoresist composition. However, how to design a resist material in order to form minute contact holes has not been known at all. It has been found that a resist suitable for obtaining a fine line width as described above is not necessarily suitable for contact hole use. Further, there is room for improvement in the storage stability of the resist solution. For example, when a chemically amplified photoresist is stored in a liquid state, there are problems such as poor compatibility between the resin and the photoacid generator, generation of particles in the liquid, and deterioration of resist performance. Still existed.

[0011]

SUMMARY OF THE INVENTION An object of the present invention is to provide a positive photoresist composition having sufficient sensitivity and resolution in forming a contact hole pattern in the manufacture of a semiconductor device. Another object of the present invention is to provide a positive photoresist composition having excellent PED stability.

[0012]

Means for Solving the Problems As a result of intensive studies on the resist composition in a positive-type chemical amplification system, the present inventors have found that the use of an acid-decomposable resin copolymerized with a specific repeating unit enables the present invention to be used. I found that my goal was achieved. That is, the present invention is the following positive photoresist composition. (1) (A) It contains a repeating unit represented by the following general formula (I) and a repeating unit having a group represented by the following general formula (II), and has a solubility in an alkali developer by the action of an acid. A positive photoresist composition comprising: an increasing resin; and (B) a compound that generates an acid upon irradiation with actinic rays or radiation. General formula (I)

[0013]

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In the formula (I), R ^{1 to} R ³ each independently represent an alkyl group, a haloalkyl group, a halogen atom, an alkoxy group, a trialkylsilyl group or a trialkylsilyloxy group. n represents 0 or 1. General formula (II)

[0015]

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In the formula (II), R ₁₁ represents a hydrogen atom or an alkyl group, and R ₁₂ represents a hydrocarbon group.

(2) The positive photoresist composition as described in (1) above, wherein the resin (A) further contains a repeating structural unit represented by the following general formula (III). General formula (III)

[0018]

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In the formula (III), Z represents an oxygen atom or NR ⁴ . R ⁴ represents a hydrogen atom, a hydroxyl group, a linear or branched alkyl group, or —O—SO ₂ —R ⁵ . R ⁵ represents an alkyl group or a trihalomethyl group.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the compounds used in the present invention will be described in detail. The resin (A) of the present invention will be described. The resin (A) is a resin containing a repeating structural unit represented by the general formula (I) and a repeating unit having a group represented by the general formula (II). The resin (A) preferably contains a repeating structural unit represented by the above general formula (III). By containing this, the density dependency is further improved. In the repeating structural unit (I), R ^{1 to} R ³ each independently represent a group selected from an alkyl group, a haloalkyl group, a halogen atom, an alkoxy group, a trialkylsilyl group, and a trialkylsilyloxy group. A trialkylsilyl group is preferable since the effect of the invention is further improved. As the alkyl group, a linear or branched alkyl group having 1 to 10 carbon atoms is preferable, and a linear or branched alkyl group having 1 to 6 carbon atoms is more preferable.
More preferably a methyl group, an ethyl group, an n-propyl group,
i-propyl group, n-butyl group, i-butyl group, s-butyl group and t-butyl group. Examples of the haloalkyl group include a chloromethyl group, a bromomethyl group, and an iodomethyl group.

The alkoxy group is a linear or branched alkoxy group having 1 to 6 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propyloxy group, an i-propyloxy group, an n-butoxy group, i-butoxy group, s
-Butoxy group and t-butoxy group, particularly preferred are methoxy and ethoxy groups.

The alkyl group of the trialkylsilyl is a linear or branched alkyl group having 1 to 6 carbon atoms, more preferably a methyl group, an ethyl group, an n-propyl group, or an i-type group.
-Propyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, and most preferred is a methyl group. The alkyl group of the trialkylsilyloxy group is a linear or branched alkyl group having 1 to 6 carbon atoms, more preferably a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, i-butyl group, s
-Butyl group and t-butyl group, and among them, the most preferred is a methyl group. n represents 0 or 1, and is preferably 1. Thereby, the roughness (irregularity) of the edge of the line is improved.

Specific examples of the repeating unit represented by the above general formula (I) include the following, but the present invention is not limited to these specific examples.

[0024]

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In the repeating unit having a group represented by formula (II), R ₁₁ represents a hydrogen atom or an alkyl group, and particularly preferably a hydrogen atom from the viewpoint of storage stability.

The alkyl group in R ₁₁ is as follows:
A linear or branched alkyl group having 1 to 10 carbon atoms is preferable, a linear or branched alkyl group having 1 to 6 carbon atoms is more preferable, and a methyl group and an ethyl group are more preferable.
n-propyl group, i-propyl group, n-butyl group, i-
A butyl group, an s-butyl group, and a t-butyl group.

R ₁₂ represents a hydrocarbon group, and examples of such a hydrocarbon group include an alkyl group, a cyclic alkyl group, an aryl group, and an aralkyl group. Specific examples of the alkyl group include those exemplified in R _11. Moreover, as a cyclic alkyl group, C4-C4-
Examples include 10 cyclic alkyl groups, specifically, a cyclopropyl group, a cyclopentyl group, a cyclohexyl group,
Adamantyl group, 2-methyl-2-adamantyl group, norbornyl group, boronyl group, isobornyl group, tricyclodecanyl group, dicyclopentenyl group, nobornane epoxy group, menthyl group, isomenthyl group, neomenthyl group, tetracyclododecanyl And the like. Examples of the aryl group include an aryl group having 6 to 14 carbon atoms, and specific examples include a phenyl group, a naphthyl group, and a tolyl group. Examples of the aralkyl group include aralkyl groups having 7 to 20 carbon atoms, and specific examples include a benzyl group, a phenethyl group, and a naphthylethyl group. The hydrocarbon group for R ₁₂ may further have a substituent. Examples of the substituent include an alkoxy group, a halogen atom, an acetoxy group, a pyranyl group, a furanyl group, and a cyano group.

Specific examples of the group represented by the above general formula (II) include the following, but the present invention is not limited to these specific examples.

[0029]

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[0030]

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Specific examples of the repeating unit having a group represented by the general formula (II) include the following, but the present invention is not limited to these specific examples.

[0032]

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[0033]

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[0034]

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[0035]

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In the repeating unit (III), Z represents an oxygen atom, NR ⁴ . R ⁴ is a hydrogen atom, a hydroxyl group, a linear or branched alkyl group, or —O—SO ₂ —R ⁵
Represents R ⁵ represents an alkyl group or a trihalomethyl group.
The alkyl group of R ⁴ and R ⁵ is preferably a linear or branched alkyl group having 1 to 10 carbon atoms, more preferably a linear or branched alkyl group having 1 to 6 carbon atoms, further preferably methyl Group, ethyl group, n-propyl group, i-
Propyl group, n-butyl group, i-butyl group, s-butyl group and t-butyl group. Specific examples of the repeating unit represented by the general formula (III) include the following, but the present invention is not limited to these specific examples.

[0037]

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[0038]

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In the resin according to the present invention, the following monomers may be further copolymerized to give a repeating unit constituting the resin as long as the effects of the present invention can be effectively obtained. However, it is not limited to the following monomers. Thereby, the performance required for the resin, particularly (1) solubility in a coating solvent, (2) film forming property (glass transition point), (3) alkali developability, and (4) film loss (hydrophobicity, alkali (Selection of a soluble group), (5) adhesion of the unexposed portion to the substrate, and (6) dry etching resistance can be finely adjusted. Examples of such a comonomer include acrylates, methacrylates,
Examples thereof include compounds having one addition-polymerizable unsaturated bond selected from acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, and the like.

Specifically, for example, acrylates such as alkyl (the alkyl group has 1 to 1 carbon atoms)
Acrylates (for example, methyl acrylate, ethyl acrylate, propyl acrylate, amyl acrylate, cyclohexyl acrylate, ethylhexyl acrylate, octyl acrylate, acrylate-
t-octyl, chloroethyl acrylate, 2-hydroxyethyl acrylate 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylolpropane monoacrylate, pentaerythritol monoacrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, Tetrahydrofurfuryl acrylate, etc.);

Methacrylic esters, for example, alkyl (the alkyl group preferably has 1 to 10 carbon atoms) methacrylate (for example, methyl methacrylate,
Ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate,
Benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate, 2-hydroxyethyl methacrylate, 4-hydroxybutyl methacrylate,
5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, furfuryl methacrylate, tetrahydrofurfuryl methacrylate, etc.);

Acrylamides, for example, acrylamide, N-alkylacrylamide, (where the alkyl group has 1 to 10 carbon atoms, for example, methyl group, ethyl group, propyl group, butyl group, t-butyl group, heptyl group, octyl Group, cyclohexyl group, hydroxyethyl group, etc.), N, N-dialkylacrylamide (alkyl group having 1 to 10 carbon atoms, for example, methyl group, ethyl group, butyl group, isobutyl group, ethylhexyl group, Cyclohexyl group, etc.), N-
Hydroxyethyl-N-methylacrylamide, N-2
-Acetamidoethyl-N-acetylacrylamide and the like;

Methacrylamides, for example, methacrylamide, N-alkyl methacrylamide (alkyl having 1 to 10 carbon atoms, for example, methyl, ethyl, t-butyl, ethylhexyl, hydroxyethyl, cyclohexyl) Groups, etc.), N, N-dialkylmethacrylamide (an alkyl group includes an ethyl group, a propyl group, a butyl group, etc.), N-hydroxyethyl-N-methylmethacrylamide and the like;

Allyl compounds such as allyl esters (eg, allyl acetate, allyl caproate, allyl caprylate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate), allyloxy Ethanol, etc .;

Vinyl ethers such as alkyl vinyl ethers (eg, hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, chloroethyl vinyl ether, 1-methyl-2,2-dimethylpropyl vinyl ether, 2-ethyl Butyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether, dimethylaminoethyl vinyl ether, diethylaminoethyl vinyl ether, butylaminoethyl vinyl ether, benzyl vinyl ether, tetrahydrofurfuryl vinyl ether, etc.);

Vinyl esters such as vinyl butyrate, vinyl isobutyrate, vinyl trimethyl acetate, vinyl diethyl acetate, vinyl valate, vinyl caproate, vinyl chloroacetate, vinyl dichloroacetate, vinyl methoxy acetate, vinyl butoxy acetate, Vinyl acetoacetate, vinyl lactate, vinyl-β-phenylbutyrate, vinylcyclohexylcarboxylate and the like;

Dialkyl itaconates (eg, dimethyl itaconate, diethyl itaconate, dibutyl itaconate, etc.); acrylic acid, methacrylic acid, crotonic acid, itaconic acid, acrylonitrile, methacrylonitrile and the like.

In the resin (A) of the present invention, the repeating unit represented by the general formula (I) and the resin represented by the general formula (II)
The content of the repeating unit having a group represented by the formula (I) and the repeating unit represented by the general formula (III), which is a preferable component for copolymerization, is as follows. It can be appropriately set in consideration of the substrate adhesion, the resist profile, and the resolution, heat resistance, and the like that are necessary requirements of general resists. Generally, in the resin (A) of the present invention, the content of the repeating unit represented by the general formula (I) is 10 to 90 mol%, preferably 15 to 70 mol%, based on all repeating units. %, More preferably 2
0 to 50 mol%. The content of the repeating unit having a group represented by the general formula (II) is 5 to 50 mol%, preferably 10 to 40 mol%, based on all repeating units. The content of the repeating unit (III) is usually from 10 to 90 mol%, preferably from 15 to 70 mol%, more preferably from 20 to 60 mol%, based on all repeating units.

In the resin (A) of the present invention, a monomer corresponding to the repeating unit represented by the general formula (I) and a monomer corresponding to the repeating unit having a group represented by the general formula (II) And, if necessary, copolymerizing a monomer corresponding to the repeating unit represented by the general formula (III) in the presence of a polymerization catalyst.

The weight average molecular weight of the resin according to the present invention is G
It is preferably from 1,000 to 200,000 in terms of polystyrene according to the PC method. When the weight average molecular weight is less than 1,000, heat resistance and dry etching resistance are deteriorated, so that it is not preferable. When the weight average molecular weight exceeds 200,000, the developability is deteriorated and the viscosity becomes extremely high, so that the film forming property is deteriorated. And so on, which produces very unfavorable results.

In the positive photoresist composition of the present invention, the amount of the resin (A) according to the present invention in the entire composition is preferably from 40 to 99.99% by weight, more preferably from the total solid content of the resist. 50-99.97% by weight.

Next, the compound (B) which generates an acid upon irradiation with actinic rays or radiation will be described. The compound used in the present invention that decomposes upon irradiation with actinic rays or radiation to generate an acid (hereinafter, also simply referred to as an acid generator) includes a photoinitiator for photocationic polymerization, a photoinitiator for photoradical polymerization, Known light (400 to 20) used for a photo-decoloring agent, a photo-discoloring agent, or a micro resist of pigments or the like.
0 nm ultraviolet light, far ultraviolet light, particularly preferably g-line, h
Ray, i-ray, KrF excimer laser light), ArF excimer laser light, an electron beam, an X-ray, a compound generating an acid by a molecular beam or an ion beam, and a mixture thereof can be appropriately selected and used.

Other compounds used in the present invention that generate an acid upon irradiation with actinic rays or radiation include, for example, SI Schlesinger, Photogr. Sci. Eng., 18, 38.
7 (1974), TSBetal, Polymer, 21,423 (1980) and the like diazonium salts, U.S. Pat.Nos. 4,069,055 and 4,069,0
No. 56, Re 27,992, ammonium salts described in JP-A-3-140140, etc., DCNecker et al., Macromolecules, 17, 24.
68 (1984), CSwen et al., Teh, Proc. Conf. Rad. Curing AS
IA, p478 Tokyo, Oct (1988), U.S. Pat.No. 4,069,055,
4,069,056, etc., phosphonium salts, JVCrivell
o etal, Macromorecules, 10 (6), 1307 (1977), Chem. & E
ng. News, Nov. 28, p31 (1988), EP 104,143.
No., U.S. Patent Nos. 339,049 and 410,201,
No. 0,848, JP-A-2-296,514 and the like, iodonium salts, JVCrivello et al., Polymer J. 17, 73 (1985), J.
V. Crivello et al. J. Org. Chem., 43, 3055 (1978), WRWa
tt etal, J. Polymer Sci., Polymer Chem. Ed., 22, 1789 (1
984), JVCrivello etal, Polymer Bull., 14,279 (198
5), JVCrivello etal, Macromorecules, 14 (5), 1141 (19
81), JVCrivello etal, J. PolymerSci., Polymer Che
m.Ed., 17,2877 (1979), European Patent Nos. 370,693, 161,
811, 410,201, 339,049, 233,567, 29
No. 7,443, No. 297,442, U.S. Pat.No. 3,902,114 No. 4,93
3,377, 4,760,013, 4,734,444, 2,833,827
No. 2,904,626, 3,604,580, 3,604,
No. 581, JP-A-7-28237, JP-A-8-27102, etc., sulfonium salts, JVCrivello et al., Macro
morecules, 10 (6), 1307 (1977), JVCrivello etal, JP
olymerSci., Polymer Chem.Ed., 17, 1047 (1979), etc., selenonium salts, CSWen et al., Teh, Proc. Conf. Rad.C
uring ASIA, p478 Tokyo, Oct (1988), etc., onium salts such as arsonium salts, U.S. Pat.No. 3,905,815, JP-B-46-4605, JP-A-48-36281, JP-A-55-32070,
JP-A-60-239736, JP-A-61-169835, JP-A-61-169
No. 837, JP-A-62-58241, JP-A-62-212401, JP-A-62-212401
63-70243, organic halogen compounds described in JP-A-63-298339, etc., K. Meier et al, J. Rad. Curing, 13 (4), 26
(1986), TPGill et al, Inorg. Chem., 19, 3007 (198
0), D. Astruc, Acc. Chem. Res., 19 (12), 377 (1896),
Organometallic / organic halides described in JP-A-2-14145, S. Hayase et al., J. Polymer Sci., 25, 753 (1987), E.
Reichmanis etal, J. Pholymer Sci., Polymer Chem. E
d., 23, 1 (1985), QQ Zhu et al., J. Photochem., 36, 85, 3
9, 317 (1987), B. Amit etal, Tetrahedron Lett., (24)
2205 (1973), DHR Barton et al., J. Chem Soc., 3571 (1
965), PM Collins et al., J. Chem. SoC., PerkinI, 1695 (19
75), M. Rudinstein et al., Tetrahedron Lett., (17), 14
45 (1975), JWWalker etal J. Am. Chem. Soc., 110, 7170
(1988), SCBusman et al., J. Imaging Technol., 11
(4), 191 (1985), HM Houlihan et al, Macormolecules,
21, 2001 (1988), PM Collins etal, J. Chem. Soc.,
Chem. Commun., 532 (1972), S. Hayase etal, Macromolec
ules, 18, 1799 (1985), E. Reichmanetal, J. Electrochem. So
c., SolidStateSci.Technol., 130 (6), FMHoulihan eta
l, Macromolcules, 21, 2001 (1988), EP 0290,750
Nos. 046,083, 156,535, 271,851, 0,38
No. 3,343, U.S. Pat.Nos. 3,901,710, 4,181,531, JP-A-60-198538, and photoacid generators having a 0-nitrobenzyl-type protecting group described in JP-A-53-133022, M. TUNOOKA
etal, Polymer Preprints Japan, 35 (8), G. Berner eta
l, J. Rad. Curing, 13 (4), WJMijs etal, CoatingTechn
ol., 55 (697), 45 (1983), Akzo, H. Adachi et al, Polyme
r Preprints, Japan, 37 (3), European Patent Nos. 0199,672, 84
No. 515, No. 044,115, No. 618,564, No. 0101,122, U.S. Pat.Nos. 4,371,605, 4,431,774, JP-A-64-1814
No. 3, JP-A-2-245756, JP-A-3-140109, etc., compounds which generate sulfonic acid by photodecomposition represented by iminosulfonate, etc .;
Disulfone compound described in JP-A-71270
-103854, 3-10856, 4-21
No. 0960 and the like.

Further, a group that generates an acid by these lights,
Alternatively, a compound having a compound introduced into the main chain or side chain of a polymer, for example, ME Woodhouse etal, J. Am. Che.
m. Soc., 104, 5586 (1982), SPPappas etal, J. Imagi
ng Sci., 30 (5), 218 (1986), S. Kondo et al., Makromol. C
hem., Rapid Commun., 9, 625 (1988), Y. Yamadaetal, Mak
romol. Chem., 152, 153, 163 (1972), JVCrivello eta
l, J. PolymerSci., Polymer Chem. Ed., 17, 3845 (197
9), U.S. Patent No. 3,849,137, Dokoku Patent No. 3914407, JP-A-63-26653, JP-A-55-164824, JP-A-62-69263
No., JP-A-63-146038, JP-A-63-163452, JP-A-62-163452
Compounds described in JP-A-153853 and JP-A-63-146029 can be used.

Further, VNRPillai, Synthesis, (1), 1 (19
80), A. Abad et al, Tetrahedron Lett., (47) 4555 (197
1), DHR Barton et al, J. Chem. Soc., (C), 329 (197
0), compounds which generate an acid by light described in US Pat. No. 3,779,778 and European Patent No. 126,712 can also be used.

Among the compounds capable of decomposing upon irradiation with actinic rays or radiation to generate an acid, those which are particularly effectively used are described below. (1) The following general formula (PAG) substituted with a trihalomethyl group
The oxazole derivative represented by 1) or the general formula (PA)
An S-triazine derivative represented by G2).

[0057]

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In the formula, R ²⁰¹ is a substituted or unsubstituted aryl group or alkenyl group, and R ²⁰² is a substituted or unsubstituted aryl group, alkenyl group, alkyl group, —C (Y) ₃
Show Y represents a chlorine atom or a bromine atom. Specific examples include the following compounds, but the present invention is not limited thereto.

[0059]

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[0060]

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[0061]

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(2) An iodonium salt represented by the following formula (PAG3) or a sulfonium salt represented by the following formula (PAG4).

[0063]

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Here, the formulas Ar ¹ and Ar ² each independently represent a substituted or unsubstituted aryl group. Preferred substituents include an alkyl group, a haloalkyl group, a cycloalkyl group, an aryl group, an alkoxy group, a nitro group, a carboxyl group, an alkoxycarbonyl group, a hydroxy group, a mercapto group, and a halogen atom.

R ²⁰³ , R ²⁰⁴ and R ²⁰⁵ each independently represent a substituted or unsubstituted alkyl group or aryl group. Preferably, it is an aryl group having 6 to 14 carbon atoms, an alkyl group having 1 to 8 carbon atoms, or a substituted derivative thereof. Preferred substituents include an aryl group, an alkoxy group having 1 to 8 carbon atoms, an alkyl group having 1 to 8 carbon atoms, a nitro group,
A carboxyl group, a hydroxy group and a halogen atom, and an alkyl group is an alkoxy group having 1 to 8 carbon atoms, a carboxyl group and an alkoxycarbonyl group.

[0066] Z ^- represents a counter anion, for example BF ₄ ^{-,
_{AsF 6 -, PF 6 -,}} SbF 6 -, SiF 6 2-, ClO 4 -,
CF ₃ SO ₃ ^-, etc. perfluoroalkane sulfonate anion, pentafluorobenzenesulfonic acid anion, condensed polynuclear aromatic sulfonic acid anion such as naphthalene-1-sulfonic acid anion, anthraquinone sulfonic acid anion, a sulfonic acid group-containing dyes Examples include, but are not limited to:

Further, two of R ²⁰³ , R ²⁰⁴ and R ²⁰⁵ and Ar ¹ and Ar ² may be bonded through a single bond or a substituent.

Specific examples include the following compounds, but are not limited thereto.

[0069]

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[0070]

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[0071]

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[0072]

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[0073]

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[0074]

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[0075]

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[0076]

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[0077]

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[0078]

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[0079]

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[0080]

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[0081]

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The above onium salts represented by the general formulas (PAG3) and (PAG4) are known, for example, JWKnapczyk
etal, J. Am. Chem. Soc., 91, 145 (1969), ALMaycok eta
l, J. Org. Chem., 35, 2532, (1970), E. Goethas et al., Bul
l. Soc. Chem. Belg., 73, 546, (1964), HM Leicest
er, J. Ame.Chem. Soc., 51, 3587 (1929), JVCrivello
et al., J. Polym. Chem. Ed., 18, 2677 (1980), U.S. Pat.
Nos. 2,807,648 and 4,247,473, JP-A-53-101,331
And the like.

(3) Disulfone derivatives represented by the following formula (PAG5) or iminosulfonate derivatives represented by the following formula (PAG6).

[0084]

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In the formula, Ar ³ and Ar ⁴ each independently represent a substituted or unsubstituted aryl group. R ²⁰⁶ represents a substituted or unsubstituted alkyl group or aryl group. A represents a substituted or unsubstituted alkylene group, alkenylene group, or arylene group. Specific examples include the following compounds, but are not limited thereto.

[0086]

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[0087]

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[0088]

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[0089]

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[0090]

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[0091]

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(4) A diazodisulfone derivative compound represented by the following general formula (PAG7). (PAG7)

[0093]

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Here, R ²¹ and R ²² are each independently
It represents an alkyl group which may have a substituent, a cycloalkyl group, or an aryl group which may have a substituent. Here, the alkyl group is preferably a linear or branched alkyl group having 1 to 20 carbon atoms, and more preferably a linear or branched alkyl group having 1 to 12 carbon atoms. As the cycloalkyl group, a cyclopentyl group or a cyclohexyl group is preferable. As the aryl group, an aryl group which may have a substituent having 6 to 10 carbon atoms is preferable. Here, as a substituent, a methyl group, an ethyl group, an n-propyl group, an i-propyl group, n
Alkyl such as -butyl group, i-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-octyl group, 2-ethylhexyl group, nonyl group, decyl group and dodecyl group Groups, a methoxy group, an ethoxy group, a propoxy group, an alkoxy group such as a butoxy group, a halogen atom, a nitro group, and an acetyl group.

Specific examples of the diazodisulfone derivative compound include the following compounds. Bis (methylsulfonyl) diazomethane, bis (ethylsulfonyl) diazomethane, bis (propylsulfonyl) diazomethane,
Bis (1-methylpropylsulfonyl) diazomethane,
Bis (butylsulfonyl) diazomethane, bis (1-methylbutylsulfonyl) diazomethane, bis (heptylsulfonyl) diazomethane, bis (octylsulfonyl) diazomethane, bis (nonylsulfonyl) diazomethane, bis (decylsulfonyl) diazomethane, bis (dodecylsulfonyl) Diazomethane, bis (trifluoromethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (benzylsulfonyl) diazomethane, bis (2-chlorobenzylsulfonyl) diazomethane, bis (4-chlorobenzylsulfonyl) diazomethane, bis (phenylsulfonyl) Diazomethane, bis (4-methoxyphenylsulfonyl)
Diazomethane, bis (2-methylphenylsulfonyl)
Diazomethane, bis (3-methylphenylsulfonyl)
Diazomethane, bis (4-methylphenylsulfonyl)
Diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (2,5-dimethylphenylsulfonyl) diazomethane, bis (3,4-dimethylphenylsulfonyl) diazomethane, bis (2,4,6-
Trimethylphenylsulfonyl) diazomethane, bis (4-fluorophenylsulfonyl) diazomethane, bis (2,4-difluorophenylsulfonyl) diazomethane, bis (2,4,6-trifluorophenylsulfonyl) diazomethane, bis (4-nitrophenylsulfonyl) ) Diazomethane

(5) A diazoketosulfone derivative compound represented by the following general formula (PAG8). (PAG8)

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Here, R ²¹ and R ²² have the same meanings as those of the above (PAG7). Specific examples of the diazoketosulfone derivative compound include the following compounds.

Methylsulfonyl-benzoyldiazomethane, ethylsulfonyl-benzoyldiazomethane,
Methylsulfonyl-4-bromobenzoyldiazomethane, ethylsulfonyl-4-bromobenzoyldiazomethane, phenylsulfonyl-benzoyldiazomethane, phenylsulfonyl-2-methylphenyldiazomethane, phenylsulfonyl-3-methylphenyldiazomethane, phenylsulfonyl- 4-methylphenyldiazomethane, phenylsulfonyl-3-methoxyphenyldiazomethane, phenylsulfonyl-4-methoxyphenyldiazomethane, phenylsulfonyl-3
-Chlorobenzoyldiazomethane, phenylsulfonyl-4-chlorophenyldiazomethane, tolylsulfonyl-3-chlorobenzoyldiazomethane, tolylsulfonyl-4-chlorophenyldiazomethane, phenylsulfonyl-4-fluorophenyldiazomethane,
Tolylsulfonyl-4-fluorophenyldiazomethane

Among the above, compounds which decompose upon irradiation with actinic rays or radiation to generate organic sulfonic acids can be suitably used. Here, the organic sulfonic acid is a sulfonic acid having an organic group, and the organic group is
Examples thereof include an alkyl group which may have a substituent, a phenyl group which may have a substituent, and a naphthyl group which may have a substituent. The substituent may have 1 carbon atom
To 12 linear or branched alkyl groups, 1 to 6 carbon atoms
And halogen atoms such as fluorine, chlorine, bromine and iodine. As the organic group, specifically,
Methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, t-butyl group, n-
Amyl group, i-amyl group, t-amyl group, s-amyl group, n-hexyl group, n-pentyl group, n-octyl group, 2-ethylhexyl group, nonyl group, decyl group, dodecyl group and other alkyl groups , A substituted alkyl group such as a chloromethyl group, a dichloromethyl group, a trichloromethyl group, a chloroethyl group, a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a perfluorobutyl group, a perfluorooctyl group, a phenyl group, a tosyl group, Substituted phenyl groups such as dimethylphenyl group, trimethylphenyl group, methoxyphenyl group, ethoxyphenyl group, chlorophenyl group, bromophenyl group, iodophenyl group, fluorophenyl group, pentafluorophenyl group, naphthyl group, methylnaphthyl group, methoxynaphthyl Group, chlorophenyl group, bromonaphthyl And a substituted naphthyl group such as Yodonafuchiru group. Among these organic groups, a group having a fluorine atom is particularly preferable.

In the present invention, an onium salt is preferable as the photoacid generator. Of these, a sulfonium salt compound and an iodonium salt compound are preferable, and specific examples thereof include a compound represented by the above general formula (PAG-3) or (PAG-4). Among the compounds represented by the general formula (PAG-3) or (PAG-4), an alkyl group which has 5 or more carbon atoms and which may have a substituent, and a cyclo which may have a substituent. Alkyl group, an alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, an acyloxy which may have a substituent Those having a group as a substituent of the phenyl group in the cation portion are preferred. As such, a photoacid generator represented by the following general formula [sI] or [sII] is particularly preferable. This can reduce the number of particles after preparing the resist composition solution and the increase in the number of particles after storage with time from the preparation.

[0102]

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In the formulas [sI] and [sII], Rs1 to Rs5
Is a hydrogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, an alkoxy group which may have a substituent, It represents a good alkoxycarbonyl group, an acyl group which may have a substituent, an acyloxy group which may have a substituent, a nitro group, a halogen atom, a hydroxyl group, and a carboxyl group. a: 1 to 5, b: 1 to 5, l: 1 to 5, m: 0 to 5, n: 0 to 5. However, at least one of Rs1 and Rs2 has an alkyl group which has 5 or more carbon atoms and may have a substituent, a cycloalkyl group which may have a substituent, and It represents a good alkoxy group, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, and an acyloxy group which may have a substituent. When l + m + n = 1, Rs3 represents an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, an alkoxy group which may have a substituent, Represents an optionally substituted alkoxycarbonyl group, an optionally substituted acyl group, and an optionally substituted acyloxy group. X represents R—SO ₃ , R represents an aliphatic hydrocarbon group which may have a substituent, or an aromatic hydrocarbon group which may have a substituent.

In the general formula [sI] or [sII], the alkyl group of Rs1 to Rs5 may be a methyl group, an ethyl group, a propyl group, an n-butyl group, an isobutyl group, which may have a substituent. Examples thereof include those having 1 to 25 carbon atoms such as a sec-butyl group, a t-butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a t-amyl group, a decanyl group, a dodecanyl group, and a hexadecanyl group. The cycloalkyl group may have a substituent and has 3 to 25 carbon atoms such as a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclooctyl group, a cyclododecanyl group, and a cyclohexadecanyl group. Things. Examples of the alkoxy group include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group,
Those having 1 to 25 carbon atoms such as c-butoxy group or t-butoxy group, pentyloxy group, t-amyloxy group, n-hexyloxy group, n-octyloxy group, n-dodecaneoxy group and the like can be mentioned. .

Examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, an isopropoxycarbonyl group, an n-butoxycarbonyl group, an isobutoxycarbonyl group and a sec-butoxycarbonyl which may have a substituent. A group having 2 to 25 carbon atoms such as a t-butoxycarbonyl group, a pentyloxycarbonyl group, a t-amyloxycarbonyl group, an n-hexyloxycarbonyl group, an n-octyloxycarbonyl group, an n-dodecaneoxycarbonyl group, etc. One. The acyl group may have a substituent and has 1 carbon atom such as a formyl group, an acetyl group, a butyryl group, a valeryl group, a hexanoyl group, an octanoyl group, a t-butylcarbonyl group, and a t-amylcarbonyl group. To 25. Examples of the acyloxy group include an acetoxy group, an ethylyloxy group, a butyryloxy group, a t-butyryloxy group, and a t which may have a substituent.
-Amylyloxy group, n-hexanecarbonyloxy group,
Examples thereof include those having 2 to 25 carbon atoms such as an n-octanecarbonyloxy group, an n-dodecanecarbonyloxy group, and an n-hexadecanecarbonyloxy group. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

The substituent for these groups is preferably an alkoxy group having 1 to 4 carbon atoms, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), an acyl group, an acyloxy group, a cyano group, a hydroxyl group, Carboxy group,
Examples thereof include an alkoxycarbonyl group and a nitro group. As described above, at least one of Rs1 and Rs2 has 5 or more carbon atoms, and may have an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, and a substituent. Represents an alkoxy group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an acyl group which may have a substituent, and an acyloxy group which may have a substituent. Examples of the substituent having 5 or more carbon atoms include those having 5 to 25 carbon atoms in the above specific examples. When l + m + n = 1, Rs3 represents an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, an alkoxy group which may have a substituent, or a substituent. It represents an optionally substituted alkoxycarbonyl group, an optionally substituted acyl group, and an optionally substituted acyloxy group. R3 preferably has 2 or more carbon atoms, more preferably 4 or more carbon atoms.

Among the above, alkyl groups which may have a substituent of Rs1 to Rs5 include methyl, ethyl, propyl, isopropyl, butyl, t- and the like.
A butyl group, an n-pentyl group, a t-amyl group, an n-hexyl group, an n-octyl group, and a decanyl group are preferable.As the cycloalkyl group, a cyclohexyl group, a cyclooctyl group, which may have a substituent, A cyclododecanyl group is preferable, and as the alkoxy group, a methoxy group, an ethoxy group, an isopropoxy group, an n-
Butoxy group, sec-butoxy group, t-butoxy group, pentyloxy group, t-amyloxy group, n-hexyloxy group, n-octyloxy group, n-dodecaneoxy group is preferable, and the alkoxycarbonyl group is preferably a substituent. Methoxycarbonyl group, ethoxycarbonyl group, isopropoxycarbonyl group, n-butoxycarbonyl group, sec-butoxycarbonyl group, t-butoxycarbonyl group, pentyloxycarbonyl group, t-amyloxycarbonyl group, n -Hexyloxycarbonyl group, n-octyloxycarbonyl group, n-dodecaneoxycarbonyl group is preferable, and the acyl group may have a substituent, formyl group, acetyl group, butyryl group, valeryl group, hexanoyl group. , Octanoyl group, t
-Butylcarbonyl group, t-amylcarbonyl group is preferable, and the acyloxy group may have a substituent,
Acetoxy group, ethylyloxy group, butyryloxy group,
A t-butyryloxy group, a t-amylyloxy group, an n-hexanecarbonyloxy group, and an n-octanecarbonyloxy group are preferred.

The alkyl group having 5 or more carbon atoms and which may have a substituent is an n-pentyl group, a t-
Amyl, n-hexyl, n-octyl and decanyl are preferred. A cycloalkyl group having 5 or more carbon atoms, which may have a substituent, is a cyclohexyl group,
A cyclooctyl group and a cyclododecanyl group are preferred. Examples of the alkoxy group having 5 or more carbon atoms, which may have a substituent, include a pentyloxy group, a t-amyloxy group,
Hexyloxy, n-octyloxy and dodecaneoxy are preferred. An alkoxycarbonyl group having 5 or more carbon atoms, which may have a substituent, includes a pentyloxycarbonyl group, a t-amyloxycarbonyl group,
Hexyloxycarbonyl, n-octyloxycarbonyl and dodecaneoxycarbonyl are preferred. As the acyl group having 5 or more carbon atoms and which may have a substituent, a paleryl group, a hexanoyl group, an octanoyl group, and a t-amylcarbonyl group are preferable. As the acyloxy group having 5 or more carbon atoms and which may have a substituent, a t-amylyloxy group, an n-hexanecarbonyloxy group, and an n-octanecarbonyloxy group are preferable. Substituents for these groups include methoxy, ethoxy, t-butoxy, chlorine, bromine, cyano,
A hydroxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, a t-butoxycarbonyl group, and a t-amyloxycarbonyl group are preferred.

The sulfonium or iodonium compound represented by the general formula [sI] or [sII] used in the present invention uses a sulfonic acid having a specific structure as described above as its counter anion, X ⁻ . Examples of the aliphatic hydrocarbon group which may have a substituent of R in the counter anion include a linear or branched alkyl group having 1 to 20 carbon atoms, or a cyclic alkyl group. R may be an aromatic group which may have a substituent. As the alkyl group for R, a methyl group, an ethyl group, a propyl group, an n-butyl group, an n-pentyl group, an n-hexyl group, which may have a substituent,
Examples thereof include those having 1 to 20 carbon atoms such as an n-octyl group, a 2-ethylhexyl group, a decyl group and a dodecyl group. The cyclic alkyl group may have a substituent,
Examples thereof include a cyclopentyl group, a cyclohexyl group, a cyclooctyl group, a cyclododecyl group, an adamantyl group, a norbornyl group, a camphor group, a tricyclodecanyl group, and a menthyl group. Examples of the aromatic group include a phenyl group and a naphthyl group which may have a substituent.

Among the above, examples of the alkyl group which may have a substituent for R include a methyl group, a trifluoromethyl group, an ethyl group, a pentafluoroethyl group, a 2,2,2
2-trifluoroethyl group, n-propyl group, n-butyl group, nonafluorobutyl group, n-pentyl group, n-hexyl group, n-octyl group, heptadecafluorooctyl group, 2-ethylhexyl group, decyl group , Dodecyl group,
Examples of the cyclic alkyl group include a cyclopentyl group, a cyclohexyl group, and a camphor group. As the aromatic group, a phenyl group, naphthyl group, pentafluorophenyl group, p-toluyl group, p-
Fluorophenyl group, p-chlorophenyl group, p-hydroxyphenyl group, p-methoxyphenyl group, dodecylphenyl group, mesityl group, triisopropylphenyl group,
4-hydroxy-1-naphthyl group, 6-hydroxy-2
-Naphthyl group.

Of the above substituents, more preferred R
Specific examples of s1 to Rs5 include a methyl group, an ethyl group,
Propyl, isopropyl, n-butyl, t-butyl, n-pentyl, t-amyl, n-hexyl, n-octyl, cyclohexyl, methoxy,
Ethoxy, isopropoxy, n-butoxy, t-
Butoxy group, pentyloxy group, t-amyloxy group, hexyloxy group, n-octyloxy group, methoxycarbonyl group, ethoxycarbonyl group, n-butoxycarbonyl group, t-butoxycarbonyl group, t-amyloxycarbonyl group, hexyl Oxycarbonyl group, n-octyloxycarbonyl group, formyl group, acetyl group, butyryl group, hexanoyl group, octanoyl group, t-butylcarbonyl group, t-amylcarbonyl group, acetoxy group, ethylyloxy group, butyryloxy group, t-butyryloxy Group, t-amylyloxy group, n-hexanecarbonyloxy group, n-octanecarbonyloxy group, hydroxyl group, chlorine atom, bromine atom and nitro group. Specific examples of the more preferable group having 5 or more carbon atoms include an n-pentyl group, a t-amyl group, an n-hexyl group, an n-octyl group,
Decanyl group, cyclohexyl group, pentyloxy group, t
-Amyloxy group, hexyloxy group, n-octyloxy group, dodecaneoxy group, pentyloxycarbonyl group, t-amyloxycarbonyl group, hexyloxycarbonyl group, n-octyloxycarbonyl group, dodecaneoxycarbonyl group, pareryl group, A hexanoyl group, an octanoyl group, a t-amylcarbonyl group, a t-amylyloxy group, an n-hexanecarbonyloxy group, and an n-octanecarboniloxy group.

More preferred specific examples of the sulfonic acid substituent R include a methyl group, a trifluoromethyl group, an ethyl group, a pentafluoroethyl group, a 2,2,2-trifluoroethyl group, an n-butyl group and a nonafluoro group. Butyl group, n
-Hexyl group, n-octyl group, heptadecafluorooctyl group, 2-ethylhexyl group, camphor group, phenyl group, naphthyl group, pentafluorophenyl group, p-toluyl group, p-fluorophenyl group, p-chlorophenyl group, p-methoxyphenyl group, dodecylphenyl group, mesityl group, triisopropylphenyl group, 4-hydroxy-1-naphthyl group and 6-hydroxy-2-naphthyl group.

The total number of carbon atoms of the generated acid is preferably from 1 to 30. The number is more preferably 1 to 28, and still more preferably 1 to 25. If the total number of carbon atoms is less than 1, the pattern formation may be hindered such as a t-top shape, and if it exceeds 30, the development residue may be undesirably generated. The general formula [s
Specific examples of the compounds represented by I] or [sII] include the following [sI-1] to [sI-18] and [sII-
1] to [sII-20], but the present invention is not limited thereto. These compounds are used alone or in combination of two or more.

[0114]

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[0115]

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[0116]

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[0117]

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[0118]

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[0119] formula [sI] or a compound represented by [sII], for example the corresponding Cl ^- salt (formula [sI] or [sII] by X ^- to Cl ^- compounds substituted with) and, X
^- represented by Y ⁺ (X ^- is the general formula [sI] or [sI
I], Y ⁺ is H ⁺ , Na ⁺ , K ⁺ , NH ₄ ⁺ , N
(CH _{3) 4} ^- shows a cation such. ) Can be synthesized by salt exchange in an aqueous solution. In addition to the above chlorides, hydroxides or methanesulfonates can be subjected to similar salt exchange.

The amount of the photoacid generator (B) is usually in the range of 0.001 to 40% by weight based on the total weight of the positive photoresist composition of the present invention (excluding the coating solvent). It is preferably used in the range of 0.01 to 20% by weight, more preferably 0.1 to 10% by weight.
If the amount of the compound that decomposes upon irradiation with actinic rays or radiation to generate an acid is less than 0.001% by weight, the sensitivity becomes low. If the amount is more than 40% by weight, the light absorption of the resist becomes high. This is not preferable because the profile is deteriorated and the process (especially baking) margin is narrowed.

The positive photoresist composition of the present invention comprises
It is preferable to contain a surfactant. Thereby, the density dependency is excellent. As the surfactant, a surfactant containing a fluorine-based surfactant, a silicon-based surfactant and a surfactant containing both a fluorine atom and a silicon atom, and a surfactant such as a nonionic surfactant can be preferably exemplified. Among them, a fluorine-based surfactant, a silicon-based surfactant, and a surfactant containing both a fluorine atom and a silicon atom are particularly preferable. As these surfactants, for example, JP-A-62-36663
No., JP-A-61-226746, JP-A-61-226745, JP-A-62
-170950, JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, and JP-A-9-5988 can include surfactants. The following commercially available surfactants can be used as they are. As commercially available surfactants that can be used, for example, F-top EF301, EF303, (manufactured by Shin-Akita Kasei Co., Ltd.), Florad FC430, 431 (manufactured by Sumitomo 3M Limited), Megafac F171, F173, F176, F189, R08
(Dai Nippon Ink Co., Ltd.), Surflon S-382, SC10
1, 102, 103, 104, 105, and 106 (manufactured by Asahi Glass Co., Ltd.) and Troisol S-366 (manufactured by Troy Chemical Co., Ltd.). Also, polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used as a silicon-based surfactant.

Examples of other surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether; Ethylene octyl phenol ether, polyoxyethylene alkyl allyl ethers such as polyoxyethylene nonyl phenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, Sorbitan trioleate, sorbitan fatty acid esters such as sorbitan tristearate, polyoxyethylene sorbitan monolaurate, Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate; Can be mentioned. The amount of the surfactant is usually 0.001% by weight to 2% by weight, preferably 0.1% by weight, based on the solid content in the composition of the present invention.
It is from 01% by weight to 1% by weight. These surfactants may be added alone or in some combination.

The positive photoresist composition of the present invention comprises
It preferably contains an organic basic compound. Thereby, the sensitivity fluctuation over time is reduced. Examples of the organic basic compound include compounds having the following structures.

[0124]

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Here, R ²⁵⁰ , R ²⁵¹ and R ²⁵² are the same or different and are a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an aminoalkyl group having 1 to 6 carbon atoms, a hydroxyalkyl having 1 to 6 carbon atoms. Or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, wherein R ²⁵¹ and R ²⁵² may be bonded to each other to form a ring.

[0126]

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Wherein R ²⁵³ , R ²⁵⁴ , R ²⁵⁵ and R ²⁵⁶
Are the same or different and represent an alkyl group having 1 to 6 carbon atoms.) Further preferred compounds are nitrogen-containing basic compounds having two or more nitrogen atoms having different chemical environments in one molecule,
Particularly preferred are compounds containing both a substituted or unsubstituted amino group and a ring structure containing a nitrogen atom, or compounds having an alkylamino group. Preferred specific examples include substituted or unsubstituted guanidine, substituted or unsubstituted aminopyridine, substituted or unsubstituted aminoalkylpyridine, substituted or unsubstituted aminopyrrolidine, substituted or unsubstituted indazol, substituted or unsubstituted Pyrazole, substituted or unsubstituted pyrazine,
Substituted or unsubstituted pyrimidine, substituted or unsubstituted purine, substituted or unsubstituted imidazoline, substituted or unsubstituted pyrazoline, substituted or unsubstituted piperazine, substituted or unsubstituted aminomorpholine, substituted or unsubstituted amino And alkyl morpholine. Preferred substituents are an amino group, an aminoalkyl group, an alkylamino group, an aminoaryl group, an arylamino group, an alkyl group, an alkoxy group, an acyl group, an acyloxy group, an aryl group, an aryloxy group, a nitro group,
A hydroxyl group and a cyano group.

Preferred specific compounds are guanidine, 1,1-dimethylguanidine, 1,1,3,3,-
Tetramethylguanidine, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-dimethylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2- (aminomethyl) pyridine,
-Amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino-5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethylpyridine, 4-aminoethylpyridine, 3-amino Pyrrolidine, piperazine, N- (2-aminoethyl) piperazine, N- (2-aminoethyl) piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-piperidinopiperidine, 2-imino Piperidine, 1- (2-
Aminoethyl) pyrrolidine, pyrazole, 3-amino-
5-methylpyrazole, 5-amino-3-methyl-1-
p-tolylpyrazole, pyrazine, 2- (aminomethyl) -5-methylpyrazine, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine,
-Pyrazoline, 3-pyrazoline, N-aminomorpholine, N- (2-aminoethyl) morpholine, 1,5-
Diazabicyclo [4,3,0] non-5-ene, 1,8
-Diazabicyclo [5,4,0] undec-7-ene,
3,4,5-triphenylimidazole, N-methylmorpholine, N-ethylmorpholine, N-hydroxyethylmorpholine, N-benzylmorpholine, cyclohexylmorpholinoethylthiourea (CHMETU), etc.
Grade morpholine derivatives, hindered amines described in JP-A-11-52575 (for example, [0005]
, Etc.) and the like, but is not limited thereto.

Particularly preferred specific examples are 1,5-diazabicyclo [4.3.0] -5-nonene, 1,8-diazabicyclo [5.4.0] -7-undecene (DBU), 1,4- Tertiary morpholines such as diazabicyclo [2.2.2] octane, 4-dimethylaminopyridine, hexamethylenetetramine, 4,4-dimethylimidazoline, pyrroles, pyrazoles, imidazoles, pyridazines, pyrimidines, and CHMETU; Hindered amines such as bis (1,2,2,6,6-pentamethyl-4-piperidyl) sebagate and the like can be mentioned.

Among them, 1,5-diazabicyclo [4,
3,0] non-5-ene, 1,8-diazabicyclo [5,4,0] undec-7-ene, 1,4-diazabicyclo [2,2,2] octane, 4-dimethylaminopyridine, hexamethylene Preferred are tetramine, CHMETU, and bis (1,2,2,6,6-pentamethyl-4-piperidyl) sebacate.

These organic basic compounds are used alone or in combination of two or more. The amount of the organic basic compound used is usually 0.001 to 10% by weight, preferably 0.01 to 5% by weight, based on the total solid content of the resist composition.
% By weight. If the amount is less than 0.001% by weight, the effect of the addition of the organic basic compound cannot be obtained. On the other hand, 10% by weight
If it exceeds 300, the sensitivity tends to decrease and the developability of the unexposed portion tends to deteriorate.

The positive photoresist composition of the present invention comprises
As a coating solvent, propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate, alkyl lactates such as methyl lactate and ethyl lactate, and propylene such as propylene glycol monomethyl ether and propylene glycol monoethyl ether Ethylene glycol monoalkyl ethers such as glycol monoalkyl ethers, ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; 2-heptanone , Γ-butyrolactone, methoxypropyl Selected from alkyl alkoxypropionates such as methyl phosphate and ethyl ethoxypropionate, alkyl pyruvates such as methyl pyruvate and ethyl pyruvate, N-methylpyrrolidone, N, N-dimethylacetamide, dimethyl sulfoxide and the like. It is applied using at least one solvent.

Preferred are propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, methyl lactate and ethyl lactate. These solvents may be used alone or as a mixture. However, since the number of development defects is reduced, one or more solvents are selected and mixed from propylene glycol monoalkyl ether acetates and alkyl lactates. Is particularly preferred. Here, these mixing ratios are preferably 95/5 to 30/70 by weight. The positive photoresist composition of the present invention may further enhance the solubility in an acid-decomposable dissolution inhibiting compound, a dye, a plasticizer, a surfactant other than the above, a photosensitizer, and a developer, if necessary. Compounds and the like can be contained.

The positive photoresist composition of the present invention is applied on a substrate to form a thin film. The thickness of this coating film is preferably from 0.4 to 1.5 μm. The above composition is applied to a substrate (eg, such as used in the manufacture of precision integrated circuit devices).
A good resist pattern can be obtained by applying a suitable coating method such as a spinner, a coater or the like on a silicon / silicon dioxide coating), exposing through a predetermined mask, baking and developing. Here, the exposure light is preferably 250 nm or less, more preferably 22 nm or less.
It is far ultraviolet light having a wavelength of 0 nm or less. Specifically, Kr
F excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157
nm), X-rays, electron beams and the like, and an ArF excimer laser (193 nm) is particularly preferable.

Examples of the developer for the positive photoresist composition of the present invention include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, and the like.
Primary amines such as n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, and tetraamines Quaternary ammonium salts such as methylammonium hydroxide and tetraethylammonium hydroxide, and alkaline aqueous solutions such as cyclic amines such as pyrrole and pyrhelidine can be used. Further, an appropriate amount of an alcohol or a surfactant may be added to the above alkaline aqueous solution.

When the resist of the positive photoresist composition of the present invention is used as the upper resist of a two-layer resist, the lower organic polymer film is etched by oxygen plasma using the upper resist pattern as a protective mask. The upper resist has sufficient resistance to oxygen plasma. Although the oxygen plasma resistance of the positive photoresist composition of the present invention depends on the silicon content of the upper resist, the etching apparatus, and the etching conditions, the etching selectivity (the etching rate ratio between the lower resist and the upper resist) is 10%. It can be taken as a sufficiently large value of ~ 100.

In the pattern forming method using the positive photoresist composition of the present invention, first, an organic polymer film is formed on a substrate to be processed. The organic polymer film may be various known photoresists, and examples thereof include FH series and FHi series manufactured by Fujifilm Olin Co., or OiR series manufactured by Olin Co., and PFI series manufactured by Sumitomo Chemical Co., Ltd. The formation of the organic polymer film is performed by dissolving these in an appropriate solvent and applying the resulting solution by a spin coating method, a spraying method or the like. Next, a film of the positive photoresist composition of the present invention is formed on the first layer of the organic polymer film. This is performed by dissolving the resist material in an appropriate solvent in the same manner as in the first layer, and applying the resulting solution by spin coating, spraying, or the like. The obtained two-layer resist is then subjected to a pattern forming step. As a first step, a pattern forming process is first performed on the second layer, that is, the film of the upper photoresist composition. Perform mask alignment as necessary, and irradiate high-energy radiation through this mask to make the irradiated portion of the photoresist composition soluble in an alkaline aqueous solution,
The pattern is formed by developing with an alkaline aqueous solution.

Next, as a second step, the organic polymer film is etched. This operation is performed by oxygen plasma etching using the film pattern of the resist composition as a mask to form a fine pattern having a high aspect ratio. I do. The etching of the organic polymer film by the oxygen plasma etching is exactly the same technique as the plasma ashing used when the resist film is peeled off after the etching of the substrate is completed by the conventional photoetching operation. This operation can be performed by, for example, a cylindrical plasma etching apparatus or a parallel flat slope plasma etching apparatus using oxygen as a reactive gas, that is, an etching gas. Further, the substrate is processed using this resist pattern as a mask. As a processing method, a dry etching method such as sputter etching, gas plasma etching, or ion beam etching can be used.

The etching treatment by the two-layer resist method including the resist film of the present invention is completed by the operation of removing the resist film. The removal of the resist layer can be carried out simply by dissolving the organic polymer material of the first layer. Since this organic polymer material is an arbitrary photoresist and has not been altered (hardened or the like) at all in the photoetching operation, an organic solvent of each known photoresist itself can be used. Or,
By a process such as plasma etching, separation can be performed without using a solvent.

[0140]

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the following examples. Synthesis Example 1 (Synthesis of photoacid generator [sI-3]) t-amylbenzene 60 g, potassium iodate 39.5
g, 81 g of acetic anhydride and 170 ml of dichloromethane were mixed, and 66.8 g of concentrated sulfuric acid was added dropwise over 2 hours while cooling in an ice bath. The reaction solution was stirred as it was for 2 hours, and then stirred at room temperature overnight to complete the reaction. After completion of the reaction, 50 ml of distilled water was added dropwise to the reaction solution while cooling in an ice bath, extraction was performed, and the organic layer was washed with water, aqueous sodium bicarbonate and water, and the obtained organic layer was concentrated to give di (t-amylphenyl). ) 40 g of iodonium sulfate was obtained. By subjecting the obtained sulfate to a salt exchange reaction with potassium heptadecafluorooctanesulfonate, the target product [sI-3] was obtained.

Synthesis Example 2 (Synthesis of photoacid generator [sI-6]) 90 g of n-octylphenyl ether, 39.5 g of potassium iodate, 81 g of acetic anhydride, 180 g of dichloromethane
66.8 g of concentrated sulfuric acid while cooling in an ice bath.
Was added dropwise over 2 hours. The reaction solution was stirred as it was for 2 hours, and then stirred at room temperature overnight to complete the reaction. After completion of the reaction, distilled water (50 mL) was added dropwise to the reaction solution while cooling in an ice bath, extraction was performed, and the organic layer was washed with water, aqueous sodium bicarbonate, and water. The obtained organic layer was concentrated, and di (n-octyloxy) was added. 45 g of phenyl) iodonium sulfate were obtained. By subjecting the obtained sulfate and potassium heptadecafluorooctanesulfonate to a salt exchange reaction, [sI-6] as an intended product was obtained.

Synthesis Example 3 (Synthesis of Photoacid Generator [sI-9]) Salt exchange of di (t-amylphenyl) iodonium sulfate obtained in Synthesis Example (1) with sodium pentafluorobenzenesenulfonate. [SI-
9] was synthesized.

Synthesis Example 4 (Synthesis of Photoacid Generator [sI-5]) To 40 g of iodobenzene, 91 g of peracetic acid was slowly added dropwise, and the reaction solution was stirred at 30 ° C. for 2 hours. When the white powder came out, it was cooled with ice, the precipitate was collected by filtration, and 38 g of iodosobenzene diacetate was recovered. 50 g of iodosobenzene diacetate, 30 g of octylphenyl ether, 70 g of acetic anhydride, and 725 mL of glacial acetic acid thus obtained were mixed, and concentrated sulfuric acid 8 was cooled in an ice bath.
g was added dropwise over 1 hour. After 1 hour, an aqueous solution in which 31 g of NaBr was dissolved in 150 mL was added dropwise, and 42 g of a precipitated white powder, iodonium bromide salt, was recovered. The obtained iodonium bromide salt and trifluoromethanesulfonate are subjected to salt exchange to obtain the desired product [sI-
5].

Synthesis Example 5 (Synthesis of photoacid generator [sII-3]) 50 g of diphenyl sulfoxide was added to 800 m of mesitylene.
L, and 200 g of aluminum chloride was added thereto, followed by stirring at 80 ° C. for 24 hours. After the completion of the reaction, the reaction solution was slowly poured into 2 L of ice. 400 mL of concentrated hydrochloric acid was added thereto, and the mixture was heated at 70 ° C. for 10 minutes. The reaction solution was cooled to room temperature, washed with ethyl acetate, and filtered. A solution prepared by dissolving 200 g of ammonium iodide in 400 mL of distilled water was added to the filtrate. The precipitated powder was collected by filtration, washed with water, washed with ethyl acetate, dried, and treated with sulfonium iodide 72.
g was obtained. 50 g of the obtained sulfonium iodide was dissolved in 300 mL of methanol, and 31 g of silver oxide was added thereto, followed by stirring for 4 hours. After filtering the reaction solution, salt exchange was performed with potassium heptadecafluorooctanesulfonate to recover 40 g of the target substance [sII-3].

Synthesis Example 6 (Synthesis of Photoacid Generator [sII-2]) The corresponding sulfonium iodide was synthesized by using octylbenzene instead of mesitylene in Synthesis Example (5), and then synthesized. Salt exchange was performed with potassium trifluoromethanesulfonate in the same manner as in Example (5) to synthesize [sII-2] in the same manner as in Synthesis Example (5).

Synthesis Example 7 (Photoacid generator [sII-8]) The corresponding sulfonium iodide was synthesized using octyloxybenzene in place of mesitylene in Synthesis example (5), and then synthesized. Salt exchange with potassium nonafluorobutanesulfonate was performed in the same manner as in 5) to obtain the desired product [sII-8].

Synthesis Example 8 (Synthesis of photoacid generator [sII-14]) To 50 g of diphenyl sulfoxide and 45 g of 2,6-xylenol were added methanesulfonic acid / diphosphorus pentoxide (10 /
1) 100 mL of the solution was added. After the fever subsides, 5
Heat at 0 ° C. for 4 hours. After the completion of the reaction, the reaction solution was poured on ice. After washing this aqueous solution with toluene and filtering, an aqueous solution in which 200 g of ammonium iodide was dissolved in 400 mL of distilled water was added, and the precipitated powder was collected by filtration. The obtained residue was washed with water and dried to obtain sulfonium iodide. 50 g of the obtained sulfonium iodide was added to methanol 300 m
L, and 31 g of silver oxide was added thereto, followed by stirring for 4 hours. After the reaction solution was filtered, salt exchange was performed with potassium heptadecafluorooctanesulfonate to recover 43 g of the target product [sII-14].

[Synthesis of Resin] Synthesis of Resin (1) Allyltrimethylsilane, ethoxymethyl acrylate, and maleic anhydride were charged into a reaction vessel in a molar ratio of 30/30/40, and dissolved in methyl ethyl ketone. % Solution was prepared. This was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stabilized, 2 mol% of a radical initiator V-601 manufactured by Wako Pure Chemical Industries, Ltd. was added to start the reaction. After heating for 15 hours, the reaction mixture was diluted twice with methyl ethyl ketone, and then poured into a large amount of hexane to precipitate a white powder. The precipitated powder was taken out by filtration and dried to obtain a resin (1) represented by the following structural formula. When molecular weight analysis of the obtained resin (1) by GPC was attempted, it was 12400 (weight average) in terms of polystyrene. Also, from the NMR spectrum, the resin (1)
Has a molar ratio of allyltrimethylsilane / ethoxymethyl acrylate / maleic anhydride of the present invention of 2
7/28/45. Resins (2) to (13) represented by the following structural formulas were synthesized in the same manner as in Synthesis Example (1). Table 1 shows the molar ratio and the weight average molecular weight of each repeating unit of the resins (2) to (13).

[0149]

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[0150]

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[0151]

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[0152]

[Table 1]

Examples 1 to 13 (Preparation and Evaluation of Positive Resist Composition) 2 g of each of the resins shown in Table 1 synthesized in the above synthesis examples, 130 mg of a photoacid generator shown in Table 2, and an organic base shown in Table 2 Compound 40m
g, and 10 mg of the surfactants shown in Table 2 were blended and dissolved in propylene glycol monomethyl ether acetate (PGMEA) at a solid content of 10% by weight.
Examples 1 to 1 were filtered through a 0.1 μm microfilter.
A positive resist composition of No. 3 was prepared.

As the surfactant, W-1: Megafac F176 (Dainippon Ink Co., Ltd.)
(Fluorine) W-2: Megafac R08 (Dai Nippon Ink Co., Ltd.)
(Fluorine and silicone type) W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) W-4: Polyoxyethylene nonylphenyl ether W-5: Troysol S-366 (Troy Chemical Co., Ltd.)
Made)

Examples of the organic basic compound include: 1: DBU (1,8-diazabicyclo [5.4.0]-
7-undecene) 2: DMAP (4-dimethylaminopyridine) 3: TPI (2,4,5-triphenylimidazole)
Represents

(Evaluation test) FHi-
A 028D resist (a resist for i-line, manufactured by Fujifilm Ohlin Co., Ltd.) is applied using a coater CDS-650 manufactured by Canon, and baked at 90 ° C. for 90 seconds to form a film having a thickness of 0.83 μm.
Was obtained. When this was further heated at 200 ° C. for 3 minutes, the film thickness became 0.71 μm. The above-prepared resist solution was applied thereon, baked at 120 ° C. for 90 seconds, and applied to a thickness of 0.20 μm.

The wafer thus obtained was exposed to an ArF excimer laser stepper while loading a resolving power mask and changing the exposure amount and focus. Then, after heating at 110 ° C. for 90 seconds in a clean room, the solution was heated to 60% with a tetramethylammonium hydroxide developer (2.38%).
After developing for 2 seconds, rinsing with distilled water and drying were performed to obtain a pattern. The resist pattern of the silicon wafer thus obtained was observed with a scanning electron microscope, and the sensitivity and resolution of the resist were evaluated as follows. Table 1 shows the results of these evaluations.

[Sensitivity]: Sensitivity is defined as an exposure amount that reproduces a contact hole size of 0.18 μm with a pitch width of 1/10, and a relative exposure when the exposure amount of the resist of Example 1 is 1.0. The amount was expressed as relative sensitivity (other resist exposure / exposure in Example 1). [Resolution]: The resolution of the contact hole is pitch width 1
It is expressed by the limit contact hole size (μm) that can be resolved at an exposure amount that reproduces a contact hole size of 0.18 μm / 10.

The PED stability of the resist was evaluated according to the following. [PED stability]: The same operation as in the above evaluation test was performed except that the resist composition was exposed, left in an exposure apparatus under high vacuum for 60 minutes, and then heated in a clean room at 100 ° C. for 90 seconds. . Regarding the evaluation of PED stability, sensitivity fluctuation ((exposure amount after aging−exposure amount before aging) /
Exposure amount before aging × 100) (%). The lower this value is, the better the PED stability is.

[0160]

[Table 2]

As shown in Table 2, the positive photoresist composition of the present invention is excellent in the resolution of a contact hole, particularly a contact hole pattern having a wide space with a pitch of 1/10 or more. Regarding storage stability, PED
Good stability.

[0162]

According to the present invention, it is possible to provide a positive photoresist composition having sufficient sensitivity and resolution and excellent PED stability in forming a contact hole pattern in manufacturing a semiconductor device.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C08K 5/00 C08K 5/00 C08L 35/00 C08L 35/00 43/04 43/04 101/06 101 / 06 G03F 7/075 511 G03F 7/075 511 H01L 21/027 H01L 21/30 502R F-term (reference) 2H025 AA01 AA02 AA04 AB16 AB17 AC04 AC08 AD03 BE00 BE07 BE10 BF02 BF05 BF30 BG00 CB1 4CB14 CB1 CB14 CB1 4 BK001 BQ001 EB116 EU186 EU216 EV176 EV216 EV296 FD200 GP03 4J100 AK32R AL08Q AM43R AM45R AM47R AP16P AR11Q AR31Q AR32Q BA02Q BA03R BA04Q BA05Q BA06Q BA10Q BA11R BA15Q BA55R BA71P BA72P BA77P BA80P38 BC03 BC01 BC03BC04B

Claims (2)

[Claims] (A) a repeating unit containing a repeating unit represented by the following general formula (I) and a repeating unit having a group represented by the following general formula (II), and which acts on an alkali developing solution by the action of an acid. A positive photoresist composition comprising a resin that increases solubility and (B) a compound that generates an acid upon irradiation with actinic rays or radiation. General formula (I) In the formula (I), R ^{1 to} R ³ each independently represent an alkyl group,
Represents a haloalkyl group, a halogen atom, an alkoxy group, a trialkylsilyl group, or a trialkylsilyloxy group. n represents 0 or 1. General formula (II) In the formula (II), R ₁₁ represents a hydrogen atom or an alkyl group,
₁₂ represents a hydrocarbon group. 2. The resin of the above (A) further comprises the following general formula (II)
The positive photoresist composition according to claim 1, comprising a repeating structural unit represented by I). General formula (III) Wherein (III), Z represents an oxygen atom or N-R ^4,. R ⁴ represents a hydrogen atom, a hydroxyl group, a linear or branched alkyl group, or —O—SO ₂ —R ⁵ . R ⁵ is an alkyl group,
Represents a trihalomethyl group.