JP2001274472A - Piezoelectric element, manufacturing method therefor, ink jet recording head, and printer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectrics element having stable high piezoelectric characteristics, an ink jet recording head, and a printer. SOLUTION: There are sequentially laminated a lower electrode 42 (a third layer 423 comprising Ir, a second layer 424 comprising Pt, and a first layer 425 comprising Ir), a Ti layer of 4-6 nm, a piezoelectrics thin film 43, and an upper electrode 44, on a ZrO2 film 32. A 100 plane orientation degree of the piezoelectrics 43 measured by an X-ray diffraction wide angle method is 40-70%, a 110 plane orientation degree of it 10% or less, and a remaining 111 plane orientation degree. Here, the thickness of the lower electrode second layer 424 is 30-50% of the entire thickness of lower electrode 42.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric element having an electromechanical conversion function, and more particularly, to a piezoelectric element and an ink jet recording head capable of obtaining excellent piezoelectric characteristics when used in an ink jet recording head. And a method for manufacturing a piezoelectric element.

[0002]

2. Description of the Related Art An ink jet recording head uses a piezoelectric element as a driving source for ink ejection of a printer. This piezoelectric element generally includes a piezoelectric thin film and an upper electrode and a lower electrode which are arranged to sandwich the piezoelectric thin film.

Conventionally, the crystal structure of a thin film made of lead zirconate titanate (PZT) has been defined, and Ti
Piezoelectric elements with improved characteristics by forming nuclei have been developed. For example, Japanese Patent Application Laid-Open No. H10-8101
No. 6 discloses a PZT thin film having a rhombohedral crystal structure and a predetermined degree of orientation. Japanese Patent Application Laid-Open No. 8-335676 discloses a piezoelectric element in which a titanium nucleus is formed on a lower electrode of Ir.

However, the conventional piezoelectric element has a problem that it is difficult to stably obtain a predetermined degree of orientation of the piezoelectric thin film with good reproducibility. Such a piezoelectric element is
It is difficult to obtain stable and high piezoelectric characteristics, and this is a factor that makes it difficult to obtain sufficient printing performance of an ink jet recording head or a printer.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and to obtain a predetermined orientation degree of a piezoelectric thin film stably with good reproducibility, thereby providing a stable and high piezoelectric characteristic. An object of the present invention is to provide a piezoelectric element, an ink jet recording head using the same, a printer, and a method of manufacturing the piezoelectric element.

[0006]

According to the present invention, there is provided a piezoelectric element comprising:
A piezoelectric device comprising: a lower electrode formed on a ZrO ₂ film; a piezoelectric film formed on the lower electrode; and an upper electrode formed on the piezoelectric film. The membrane is
The degree of 100 plane orientation measured by the X-ray diffraction wide angle method is 40%
Is not less than 70%.

Further, the degree of orientation of the 110 plane is 10% or less,
The degree of one-plane orientation is preferably the balance.

In particular, the lower electrode includes a first layer located on the uppermost layer and containing Ir, and a lower electrode located on the next layer.
at least 30% and not more than 50% of the total thickness of the lower electrode, and a thickness of not less than 4 nm and not more than 6 nm on the lower electrode. In which a Ti layer is formed, and a piezoelectric film is formed on the Ti layer. And (1) a third layer that is located next to the second layer and that is the lowermost layer of the lower electrode and that includes Ir. The two layers may be the lowermost layers.

The lower electrode is located on the uppermost layer and includes a first layer containing Pt,
and at least a second layer containing r, and the first layer has a thickness of 20% or more and 40% or less of the total thickness of the lower electrode, and a thickness of 4 nm or more and 6 nm or less on the lower electrode. And a piezoelectric film is formed on the Ti layer. (1) In the lower electrode, the second layer containing Ir may be a lowermost layer.

Further, the present invention is an ink jet type recording head, wherein the above-mentioned piezoelectric element is provided as a piezoelectric actuator on a diaphragm which is an installation surface.

Further, the present invention is a printer comprising the ink jet recording head as a printing means.

Further, the present invention provides a step of forming a ZrO ₂ film on a substrate, a step of forming a lower electrode on the ZrO ₂ film, and a step of forming a Ti nucleus having a thickness of 4 nm to 6 nm on the lower electrode. A step of forming a piezoelectric precursor film on the Ti layer, and a firing step, wherein the lower electrode is located on an uppermost layer. A first layer containing Ir and at least a second layer containing Pt located on the next layer, wherein the thickness of the second layer is 30% or more and 50% or less with respect to the thickness of the entire lower electrode; The step of forming the lower electrode includes at least a step of forming the second layer containing Pt and a step of forming the first layer containing Ir on the second layer; or The lower electrode is located on the uppermost layer and includes a first layer containing Pt, and the lower layer is located on the next layer and includes Ir. At least a second layer, and wherein the thickness of the first layer is at least 20% and at most 40% of the total thickness of the lower electrode, and the step of forming the lower electrode comprises: It is characterized by comprising at least a step of forming two layers and a step of forming the first layer containing Pt on the second layer.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (Explanation of Principle) FIG. 9 shows that a lower electrode laminated on a ZrO ₂ film in the order of Ir layer / Pt layer / Ir layer and a Ti nucleus are formed. For a piezoelectric element formed by crystallizing a film, a piezoelectric thin film of 100
The figure which measured the relationship between the plane orientation degree and the thickness of Ti nucleus is shown.
In FIG. 9, the symbol (A) indicates a case where the thickness of the lower electrode second layer including Pt is about 10% of the thickness of the entire lower electrode. In this case, the thickness of the Ti nucleus is not less than 4 nm and not more than 6 nm.
If it is less than nm, the degree of 100-plane orientation can be increased to about 90%. However, when trying to adjust the degree of 100-plane orientation to a value different from this, the fluctuation of the degree of 100-plane orientation with respect to the change in the thickness of the Ti nucleus is too large, and a desired degree of 100-plane orientation can be obtained stably with good reproducibility. Can not do.

On the other hand, reference numeral (a) in FIG. 9 shows a case where the ratio of the thickness of the second layer of the lower electrode including Pt to the total thickness of the lower electrode is increased from the case (a). .
In this case, the piezoelectric thin film 111 is affected by Pt.
The degree of plane orientation increases, the degree of 100 plane orientation becomes lower than in the case of (A), and the thickness of the Ti nucleus is 4 nm or more and 6 n
At m or less, the degree of 100-plane orientation shows a stable value.

As described above, by controlling the thickness of the Ti nucleus to 4 to 6 nm and adjusting the ratio of the thickness of the Pt layer to the total thickness of the lower electrode, the degree of 100 plane orientation (10
The ratio between the 0-plane orientation and the 111-plane orientation) can be adjusted to a desired ratio with good reproducibility.

Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is an enlarged sectional view of a layer structure of a piezoelectric element portion of an ink jet recording head according to this embodiment.

As shown in FIG. 1, the piezoelectric element 40 is formed by sequentially laminating a ZrO ₂ film 32, a lower electrode 42, a piezoelectric thin film 43 and an upper electrode 44 on an oxide film 31.

The oxide film 31 is formed on the pressure chamber substrate 20 made of, for example, single-crystal silicon having a thickness of 220 μm. Preferably, a film made of silicon oxide (SiO ₂ ) has a thickness of 1.0 μm.
m.

The ZrO ₂ film 32 is a layer having elasticity, and forms the diaphragm 30 integrally with the oxide film 31. Since the ZrO ₂ film 32 has a function of giving elasticity, it preferably has a thickness of 200 nm or more and 800 nm or less.

Between the ZrO ₂ film 32 and the lower electrode 42,
An adhesion layer (not shown) made of a metal, preferably titanium or chromium, that adheres both layers may be provided. The adhesion layer is formed to improve the adhesion to the installation surface of the piezoelectric element, and may not be formed if the adhesion can be ensured. When an adhesion layer is provided, the thickness is preferably 10 nm or more in order to ensure the minimum adhesion.

The lower electrode 42 has a third layer 423 which is located at the lowermost layer and contains Ir and has a thickness of 30% with respect to the thickness of the lower electrode 42.
The second layer 42 having a thickness of not less than 50% and containing Pt
4 and a first layer 425 containing Ir and located on the uppermost layer. The overall thickness of the lower electrode 42 is not particularly limited, and is, for example, 100 nm. When the thickness of the adhesion layer before firing is d0, the thickness of the third layer 423 is d1, the thickness of the second layer is d2, the thickness of the first layer is d3, and the thickness of the entire lower electrode after firing is dT. , DT = 3.6 × d0 +
It is preferable that the relationship of 2.4 × d1 + 0.8 × d2 + 2.3 × d3 is satisfied.

On the lower electrode 42, a Ti nucleus layer (not shown) is formed. Ti nucleus is 4 nm or more and 6 nm
The thickness is as follows.

The piezoelectric thin film 43 is a ferroelectric composed of ordinary piezoelectric ceramic crystals.
It is made of a ferroelectric piezoelectric material such as lead zirconate titanate (PZT) or a material to which a metal oxide such as niobium oxide, nickel oxide or magnesium oxide is added. The composition of the piezoelectric thin film 43 is appropriately selected in consideration of the characteristics, application, and the like of the piezoelectric element. Specifically, lead titanate (PbTiO
₃ ), lead zirconate titanate (Pb (Zr, Ti)
O ₃ ), lead zirconate (PbZrO ₃ ), lead lanthanum titanate ((Pb, La), TiO ₃ ), lead lanthanum zirconate titanate ((Pb, La) (Zr, Ti) O
₃ ) or lead magnesium zirconium niobate titanate (Pb (Zr, Ti) (Mg, Nb) O ₃ ) or the like is preferably used. In addition, a film having excellent piezoelectric properties can be obtained by appropriately adding niobium (Nb) to lead titanate or lead zirconate.

The degree of 100 plane orientation of the piezoelectric thin film 43 measured by the X-ray diffraction wide angle method is 40% or more and 70% or less. The degree of orientation in the 110 plane is 10% or less, and the degree of orientation in the 111 plane is the remainder.

The thickness of the piezoelectric thin film 43 must be suppressed to a level that does not cause cracks in the manufacturing process, while it must be large enough to exhibit sufficient displacement characteristics, for example, 1500 nm.
And

The upper electrode 44 is an electrode paired with the lower electrode 42, and is preferably made of Pt or Ir. The thickness of the upper electrode 44 is preferably about 50 nm.

FIG. 4 is a partial perspective view showing the structure of the main part of the ink jet recording head of the present invention.

As shown in FIG. 4, the ink jet recording head comprises a nozzle plate 10, a pressure chamber substrate 20, and a vibration plate 30.
And the piezoelectric element 40.

The pressure chamber substrate 20 is a pressure chamber (cavity).
21, a side wall 22, a reservoir 23 and a supply port 24. The pressure chamber 21 is formed as a space for storing ink and the like by discharging a substrate such as silicon by etching. The side wall 22 is formed so as to partition the pressure chamber 21. The reservoir 23 is a flow path for filling the pressure chambers 21 with ink in common. The supply port 24 is connected to each pressure chamber 21 from the reservoir 23.
The ink is formed so that the ink can be introduced into the ink.

The nozzle plate 10 has its nozzle 11 at a position corresponding to each of the pressure chambers 21 provided on the pressure chamber substrate 20.
Are bonded to one surface of the pressure chamber substrate 20 so as to be disposed.

The vibration plate 30 is made of the oxide film 31 as described above.
And a ZrO ₂ film 32.
The piezoelectric element 40 of the present invention is provided on the vibration plate 30 as a piezoelectric actuator. A piezoelectric element 40 having the layer structure shown in FIG. 1 is provided at a position on the vibration plate 30 corresponding to each pressure chamber 21. The diaphragm 30 is provided with an ink tank port 35 so that ink stored in an ink tank (not shown) can be supplied into the pressure chamber substrate 20.

The pressure chamber substrate 20 provided with the nozzle plate 10 and the vibration plate 30 is further accommodated in a casing (not shown) to constitute an ink jet recording head.

In the above configuration, when a voltage is applied between the lower electrode 42 and the upper electrode 44 of the piezoelectric element 40 and the piezoelectric element 40 is distorted, the diaphragm 30 is deformed in response to the distortion. Due to the deformation, a pressure is applied to the ink in the pressure chamber 21, and a droplet of the ink is ejected from the nozzle 11.

FIG. 5 is a perspective view illustrating the structure of the printer 100 according to the present embodiment. As shown in FIG. 5, the printer 100 includes an ink jet recording head 1 of the present invention, which is a printing means, a tray 3, a discharge port 4,
A paper feed mechanism 6, a control circuit 8, an operation panel 9, and the like are provided.

The tray 3 feeds the paper 5 before printing to a paper feed mechanism 6
It is configured to be able to be supplied. The control circuit 8 controls the paper feed signal S to cause the paper feed mechanism 6 to convey the paper 5 based on control from the operation panel 9 or print information supplied from the outside.
d and a print signal Sh for causing the ink jet recording head 1 to perform printing are output. Paper feed mechanism 6
Is composed of rollers 601 and 602 for taking in the paper 5 and a motor 600 for driving them, and the like.
The paper 5 can be taken into the main body 2 based on The ink jet recording head 1 includes a paper feed mechanism 6
When the print signal Sh is supplied from the control circuit 8, the piezoelectric element 40 is deformed and ink is ejected to print on the paper 5 when the print signal Sh is supplied from the control circuit 8. Has become possible. Outlet 4
Is an exit from which the paper 5 on which printing has been completed can be discharged.

(Embodiment 2) FIG. 2 is an enlarged sectional view of a layer structure of a piezoelectric element portion of an ink jet recording head according to a second embodiment of the present invention.

In this embodiment, the lower electrode 42 has a thickness of 30% to 50% of the thickness of the lower electrode 42, and includes a second layer (lowest layer) 426 containing Pt and Ir. The first layer (uppermost layer) 427 including
This is different from the first embodiment.

(Embodiment 3) FIG. 3 is a sectional view of a layer structure in which a piezoelectric element portion of an ink jet recording head according to a third embodiment of the present invention is enlarged.

In this embodiment, the lower electrode 42 has a second layer (lowermost layer) 428 containing Ir and a thickness of 20% to 40% of the thickness of the lower electrode 42 and Pt is And the first layer (uppermost layer) 429
This is different from the first embodiment.

(Production Method) Next, a method for producing the piezoelectric element of the present invention will be described. 6 and 7 are schematic cross-sectional views illustrating a method for manufacturing a piezoelectric element and an ink jet recording head according to the present invention.

[0042]Oxide film forming step (S1)  This step is performed in an oxidizing atmosphere containing oxygen or water vapor.
High temperature treatment, silicon oxide (SiO₂) Made of oxide film 31
Is a step of forming In this step, the usual thermal oxidation
In addition to the method, a CVD method can be used.

[0043]Step of forming ZrO ₂ film (S2)  On the oxide film 31 on the pressure chamber substrate 20, ZrO₂Membrane 32
Is a step of forming This ZrO₂The film 32 is
With a Zr layer formed by vacuum deposition or vacuum evaporation
At a high temperature in an oxygen atmosphere.

[0044]Step of forming lower electrode (S3)  In the lower electrode according to the first embodiment, ZrO₂Membrane 32
Forming a third layer 423 containing Ir thereon,
On the three layers, 30% or more of the thickness of the lower electrode 42
% Of the second layer 424 containing not more than Pt
Forming a first layer 425 containing Ir on the second layer.
And the step of forming.

In the lower electrode according to the second embodiment, Z
30% of the thickness of the lower electrode 42 on the rO ₂ film 32
The second layer 42 having a thickness of not less than 50% and containing Pt
6 and a step of forming a first layer 424 containing Ir on the second layer.

In the lower electrode according to the third embodiment, Z
forming a second layer 428 containing Ir on the rO ₂ film 32, and forming a second layer 428 on the second layer with respect to the thickness of the lower electrode 42;
Forming a first layer 429 having a thickness of 0% or more and 40% or less and containing Pt.

Each of the layers 423 to 429 is formed by depositing Ir or Pt on the ZrO ₂ film 32 by sputtering or the like. Prior to the formation of the lower electrode 42, an adhesion layer (not shown) made of titanium or chromium may be formed by a sputtering method or a vacuum evaporation method.

[0048]Step of forming Ti core (layer)  In this step, a chip is formed on the lower electrode 42 by a sputtering method or the like.
This is a step of forming a tan crystal (not shown) in an island shape. T
The i nucleus (layer) is formed using titanium crystal as a nucleus and PZ
By growing T, crystal growth from the lower electrode side
This is because a dense and columnar crystal is obtained.

[0049]Step of Forming Piezoelectric Precursor Film (S4)  In this step, the piezoelectric precursor film 4 is formed by a sol-gel method.
3 '.

First, a sol composed of an organic metal alkoxide solution is applied onto a Ti nucleus by an application method such as spin coating. Next, drying is performed at a constant temperature for a predetermined time, and the solvent is evaporated. After drying, degreasing is further performed at a predetermined high temperature in an air atmosphere for a certain period of time, and the organic ligand coordinated to the metal is thermally decomposed into a metal oxide. These steps of coating, drying, and degreasing are repeated a predetermined number of times, for example, four times or more, and four or more piezoelectric precursor films are stacked. By these drying and degreasing treatments, the metal alkoxide and acetate in the solution form a network of metal, oxygen, and metal through thermal decomposition of the ligand.

[0051]Firing step (S5)  After the formation of the piezoelectric precursor film 43 ', baking
This is the step of crystallizing the body film. By this firing, the piezoelectric
The precursor precursor film 43 ′ is formed from a precursor in an amorphous state.
A lobskite crystal structure is formed,
The thin film shown in FIG.
A piezoelectric thin film having a 0 plane orientation degree of 40% or more and 70% or less is obtained.
You.

[0052]Upper electrode forming step (S6)  Finally, an electron beam evaporation method or
The upper electrode 44 is formed by a sputtering method.

The piezoelectric element 40 obtained by the above steps
Is manufactured by etching it into a shape suitable for the place of use and applying a voltage between the upper and lower electrodes so that the piezoelectric element of the present invention can be operated.

The process of etching the obtained piezoelectric element 40 so as to be compatible with an ink jet recording head and forming it into a shape as a piezoelectric element will be described below with reference to FIG.

[0055]Piezoelectric element forming step (S7)  First, a shape in which the piezoelectric element 40 is adapted to each pressure chamber 21
And then etch the periphery. Specifically
First, use a spinner method, a spray method, etc.
A resist material having a uniform thickness is applied on the upper electrode. Next
After forming the mask in the shape of the piezoelectric element,
To form a resist pattern on the upper electrode 44
You. Ion milling or dry etching usually used for this
The upper electrode 44, the piezoelectric thin film 4
3. The lower electrode 42 is removed by etching, and each piezoelectric element 4
0 is molded.

[0056]Pressure chamber forming step (S8)  Next, other than the pressure chamber substrate 20 on which the piezoelectric element 40 is formed,
On one side, anisotropic etching or parallel plate reactive
Anisotropic etching using active gas such as on-etching
To form the pressure chamber 21. Remains without being etched
The portion thus formed becomes the side wall 22.

At the end of the nozzle plate bonding step (S9) ,
The nozzle plate 10 is attached to the pressure chamber substrate 20 after the etching with an adhesive. At the time of bonding, the nozzles 11 are aligned so as to be arranged in the respective spaces of the pressure chambers 21.
The pressure chamber substrate 20 to which the nozzle plate 10 is attached is attached to a casing (not shown), and the ink jet recording head 1
To complete.

(Examples) Several piezoelectric elements were manufactured by the manufacturing method of the first embodiment by changing the ratio of the thickness of the Pt layer to the total thickness of the lower electrode in various ways. Some piezoelectric elements were manufactured at ratios other than those shown in the embodiments.

FIG. 8 is a graph showing the relationship between the degree of orientation in the 100 plane and the piezoelectric constant d31 of the resulting piezoelectric element. In particular, the piezoelectric constant d31 is high frequency (14k
Hz, measured using an inkjet head) and low frequency (DC driven, measured using a cantilever). In FIG. 8, when the degree of orientation in the 100 plane is small, it indicates that the degree of orientation in the 111 plane is large.

As shown in FIG. 8, in low-frequency driving, 1
The higher the degree of 11-plane orientation, the higher the piezoelectric multiplier d31. However, in high-frequency driving such as used in an inkjet head,
It can be seen that when the degree of 100-plane orientation is 40% or more and 70% or less, suitable piezoelectric characteristics can be obtained. A piezoelectric element having such a degree of orientation was manufactured when the thickness of the Pt layer was 30 to 50% of the total thickness of the lower electrode.

The measurement of the piezoelectric constant d31 was obtained from the displacement at the time of applying a voltage. Further, the “degree of 100-plane orientation” referred to in the present application is defined as I (XYZ) when the diffraction intensity of a peak (2θ) corresponding to the XYZ plane when CuKα rays are used in the X-ray diffraction wide-angle method is I (XYZ). 100) I (100)
And I (110) to the sum of I (111).

(Other Modifications) The present invention can be applied in various modifications without depending on the above embodiment.
For example, the piezoelectric element manufactured by the present invention is not limited to the piezoelectric element of the above-described ink jet recording head, but also includes a nonvolatile semiconductor memory device, a thin film capacitor, a pyroelectric detector, a sensor, a surface acoustic wave optical waveguide, and an optical memory. It can be applied to the manufacture of ferroelectric devices such as devices, spatial light modulators, frequency doublers for diode lasers, dielectric devices, pyroelectric devices, piezoelectric devices, and electro-optical devices.

[0063]

According to the present invention, the degree of 100-plane orientation of the piezoelectric thin film can be stably obtained with good reproducibility. As a result, the ratio between the degree of orientation of the piezoelectric thin film in the 100 plane and the degree of orientation of the 111 plane can be obtained with good reproducibility. As a result, it is possible to provide a piezoelectric element having stable and high piezoelectric characteristics at both high and low frequencies, and an ink jet recording head, a printer and a method of manufacturing the piezoelectric element using the same.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a piezoelectric element according to a first embodiment.

FIG. 2 is a sectional view of a piezoelectric element according to a second embodiment.

FIG. 3 is a cross-sectional view of a piezoelectric element according to a third embodiment.

FIG. 4 is a perspective view, partly in section, showing the structure of a main part of an ink jet recording head.

FIG. 5 is a perspective view showing the structure of a printer using the ink jet recording head of the present invention.

FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing an ink jet recording head of the present invention.

FIG. 7 is a schematic cross-sectional view illustrating a method for manufacturing an ink jet recording head of the present invention.

FIG. 8 is a diagram showing the relationship between the degree of orientation of the 100 plane and the piezoelectric constant d31.

FIG. 9 is a diagram showing the relationship between the degree of 100-plane orientation and the thickness of Ti nuclei.

[Explanation of symbols]

Reference Signs List 20 pressure chamber substrate 30 diaphragm 31 oxide film 32 ZrO ₂ film 40 piezoelectric element 42 lower electrode 423 third layer (Ir) 424 second layer (Pt) 425 first layer (Ir) 426 second layer (Pt) 427 First layer (Ir) 428 Second layer (Ir) 429 First layer (Pt) 43 Piezoelectric thin film 44 Upper electrode

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 41/22 H01L 41/18 101Z // C23C 14/14 41/22 Z

Claims (11)

[Claims] A lower electrode formed on the ZrO ₂ film;
A piezoelectric element comprising a piezoelectric film formed on the lower electrode and an upper electrode formed on the piezoelectric film, wherein the piezoelectric film is measured by an X-ray diffraction wide-angle method.
A piezoelectric element having a plane orientation degree of 40% or more and 70% or less. 2. The piezoelectric element according to claim 1, wherein the piezoelectric film is measured by an X-ray diffraction wide-angle method.
A piezoelectric element, wherein the degree of plane orientation is 10% or less, and the degree of plane orientation is the remainder. 3. The piezoelectric element according to claim 1, wherein the lower electrode is located on an uppermost layer and includes a first layer containing Ir.
A second layer containing Pt, which is located on the next layer, and wherein the thickness of the second layer is 30% of the total thickness of the lower electrode.
% To 50%, wherein a Ti layer having a thickness of 4 nm to 6 nm is formed on the lower electrode, and a piezoelectric film is formed on the Ti layer. 4. The piezoelectric element according to claim 3, wherein the lower electrode includes a third layer that is a layer next to the second layer and is located at a lowermost layer of the lower electrode and includes Ir. A piezoelectric element comprising: a piezoelectric element; 5. The piezoelectric element according to claim 3, wherein, of the lower electrodes, the second layer containing Pt is a lowermost layer. 6. The piezoelectric element according to claim 1, wherein the lower electrode is located on an uppermost layer and includes a first layer including Pt;
A second layer that is located on the next layer and includes Ir, and the thickness of the first layer is 20% of the thickness of the entire lower electrode.
% To 40%, wherein a Ti layer having a thickness of 4 nm to 6 nm is formed on the lower electrode, and a piezoelectric film is formed on the Ti layer. 7. The piezoelectric element according to claim 6, wherein, of the lower electrodes, the second layer containing Ir is a lowermost layer. 8. An ink jet type wherein the piezoelectric element according to claim 1 is provided as a piezoelectric actuator on a diaphragm which is a mounting surface of the piezoelectric element. Recording head. 9. A printer comprising the ink jet recording head according to claim 8 as printing means. 10. A step of forming a ZrO ₂ film on a substrate, a step of forming a lower electrode on the ZrO ₂ film, and a step of forming a Ti layer having a thickness of 4 nm or more and 6 nm or less on the lower electrode. A method of forming a piezoelectric precursor film on the Ti layer, and a firing step, wherein the lower electrode is located on an uppermost layer and includes a first layer containing Ir. When,
A second layer containing Pt, which is located on the next layer, and wherein the thickness of the second layer is 30% of the total thickness of the lower electrode.
% To 50%, and the step of forming the lower electrode includes at least a step of forming the second layer containing Pt and a step of forming the first layer containing Ir on the second layer. A method for manufacturing a piezoelectric element, comprising: 11. A step of forming a ZrO ₂ film on a substrate, a step of forming a lower electrode on the ZrO ₂ film, and a step of forming a Ti layer having a thickness of 4 nm or more and 6 nm or less on the lower electrode. A method of forming a piezoelectric precursor film on the Ti layer, and a firing step, wherein the lower electrode is a top layer and contains a first layer containing Pt. When,
A second layer that is located on the next layer and includes Ir, and the thickness of the first layer is 20% of the thickness of the entire lower electrode.
% To 40%, wherein the step of forming the lower electrode includes at least a step of forming the second layer containing Ir, and a step of forming the first layer containing Pt on the second layer. A method for manufacturing a piezoelectric element, comprising: