JP2001262354A - Film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition system where a wafer can be heated rapidly and uniformly in a treatment chamber to improve the throughput of film deposition treatment and lower the vapor growth treatment temperature. SOLUTION: The system has a wafer-holding means 18 for holding a wafer W to be subjected to film deposition, a heater 20 for radiation heating disposed in a manner to be opposed to the wafer held by the wafer-holding means, and gas flow passages 24, 10, and 26 for allowing gas to flow through the space between the wafer and the heater in such a way that it is in parallel with the wafer surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus by chemical vapor deposition, and more particularly, to a method for forming a high dielectric or ferroelectric thin film such as barium titanate / strontium or a copper film for wiring on a substrate. The present invention relates to a single-wafer type film forming apparatus used for forming.

[0002]

2. Description of the Related Art In recent years, the degree of integration of integrated circuits in the semiconductor industry has been remarkably improved, and research and development of DRAMs from the current megabit order to the future gigabit order have been conducted. To manufacture such a DRAM,
A capacitor element that can obtain a large capacity with a small area is required. As a dielectric thin film used for manufacturing such a large-capacity element, a tantalum pentoxide (Ta ₂ O ₅ ) thin film having a dielectric constant of about 20 is used instead of a silicon oxide film or a silicon nitride film having a dielectric constant of 10 or less. Or, a metal oxide thin film material such as barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ), or barium strontium titanate having a dielectric constant of about 300 is considered promising. Further, PZT, PLZT, and Y1 having higher dielectric constants
Are also promising.

In addition to the above, aluminum is used as a wiring material.
Electromigration with lower wiring resistance than
Promising copper is also promising. In addition, gate insulation
BiVO, Bi as the material of the film₄Ti₃O₁₂, YM
nO₃, ZnO, (Zn, Cd) S, etc. are perovskite
SrRuO as the electrode material of₃, BaRu
O ₃, IrO, CaRuO₃Etc., barrier layer and buffer
MgO, Y as layer material₂O₃, YSZ, TaN
However, as a superconducting material, La-Ba-Cu-O, La-
Sr-Cu-O, Y-Ba-Cu-O, Bi-Sr-C
a-Cu-O, Tl-Ba-Ca-Cu-O, Hg-B
a-Ca-Cu-O and the like are promising.

As a method of forming a film of such a material,
Chemical vapor deposition (CVD) is promising. FIG.
FIG. 1 is a diagram showing the overall configuration of a film forming apparatus for forming a seed layer for this type of Cu wiring or a wiring itself, wherein a raw material is provided downstream of a vaporizer (gas generating device) 110 for vaporizing a liquid raw material. A film-forming chamber 114 that can be hermetically sealed via a gas transfer channel 112 is provided, and the exhaust channel 11 on the downstream side thereof is further provided.
A vacuum pump 116 is arranged at 8. Film formation chamber 114
Is connected to an additional gas pipe 120 for supplying an additional gas such as oxygen and hydrogen.

[0005] With the film forming apparatus having such a configuration, the substrate W
Is placed on the substrate holding / heating table 124, and while maintaining the substrate W at a predetermined temperature, the nozzle hole 126 of the gas injection head 128 is
Then, a mixed gas of the source gas and the additive gas is injected toward the substrate W to grow a thin film on the surface of the substrate W. In this case, it is necessary to stably supply the source gas to the deposition target substrate in the deposition chamber. The source gas is Cu (hfac) t
It is generated by heating a liquid raw material such as mvs with a vaporizer to vaporize it.

In a modification of the chemical vapor deposition (CVD) apparatus, as shown in FIG. 7, a processing gas G ejected from a gas ejection nozzle 128 is brought into contact with a high-temperature hot wire 130 to thereby provide a hot gas. The film is formed on the surface of the substrate W while activating the processing gas by the catalytic action of the heating wire. Accordingly, the substrate W itself can be grown at a relatively low temperature in a vapor phase, so that the temperature of the film can be lowered and the process time (time of the film itself) can be reduced. Here, as the heating wire 130, a heating wire such as tungsten or tantalum which is a high melting point metal is used, and a required current is supplied from a power source 134,
In the case of a silicon-based source gas, it is heated to a high temperature of about 1600 to 1800 ° C. This temperature is detected using the infrared thermometer 132, and is controlled to a predetermined temperature by adjusting the current. In the figure, reference numeral 136 denotes a shutter, which can be opened well after sufficient film forming conditions are prepared, thereby performing a good film formation.

However, in the case of the apparatus shown in FIG. 7, when oxygen is contained in the processing gas G, there is a problem that a high-temperature tungsten or tantalum wire is oxidized and a hot wire is deteriorated. In addition, since the semiconductor substrate W to be formed is heated by both the heater built in the holding table 124 of the substrate and the heating wire 130, there is a problem that it is difficult to control the temperature of the substrate itself.

[0008]

By the way, in a single-wafer type film forming apparatus, the processing time per substrate in the processing chamber is shortened so that the number of substrates processed per apparatus time is increased as much as possible. That is, there is a demand for an improvement in throughput. Here, the processing time of the substrate in the processing chamber is roughly divided into the following two, and in some cases, the following three including the cooling time. Substrate heating time (preheating time) Actual processing time for film formation, etching, etc. Cooling time Therefore, if the above processing time is essentially short in the process, the above heating time (preheating time) and cooling time Length is a bottleneck in improving throughput.

In the prior art in which the substrate is heated (preheated) in the processing chamber by using the heating means built in the substrate holding means, in order to maintain the temperature stability of the substrate,
A heater having a considerable heat capacity and a large time constant of temperature rise and fall is generally used as a heating means. For this reason, when the temperature of the substrate approaches the target temperature, the temperature difference between the substrate and the heating means (heater) becomes small, and even if a heater provided with the temperature adjusting means is used, it takes a very long time until the substrate reaches the target temperature. There is a problem that it takes time. Further, in an apparatus using a substrate holding table with a built-in heater having a large heat capacity, there is a problem that it is very difficult to cool the substrate in the apparatus.

[0010] On the other hand, in the manufacture of semiconductor devices, there is a demand for lower processing temperatures. This is because, in the same process, the processing time becomes longer as the temperature becomes lower, and demands contradictory to high throughput are made.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and uniformly and quickly heats and cools a substrate in a processing chamber, thereby improving throughput, lowering the temperature of a vapor phase growth process and forming a film. It is an object of the present invention to provide a film forming apparatus capable of reducing time.

[0012]

According to a first aspect of the present invention, there is provided a substrate holding means for holding a substrate on which a film is to be formed, a light source arranged so as to face the substrate held by the substrate holding means, and a light source. Alternatively, there is provided a film forming apparatus comprising: a heat source; and a gas flow path that allows a gas to flow in a space between the substrate and the light source and / or the heat source in parallel with the substrate surface.

A light source and / or a heat source arranged so as to face the substrate held by the holding means is, for example, a halogen lamp heater which is a radiant heater. The temperature can be raised to a predetermined temperature in a short time. As a result, the remaining heat time of the substrate can be reduced, and the processing time of the substrate can be reduced, so that the throughput can be improved.

The invention according to claim 2 mainly includes two methods. First, in the gas flow path on the upstream side of the space between the substrate and the radiant heater surface, an activation unit for heating a heating wire and activating a processing gas was provided. It is characterized by the following. As a result, the processing gas is activated by a catalytic reaction using a high-temperature heating wire (hot wire). Then, since the activated processing gas is introduced into the space between the light source or the heat source and the substrate described above,
Processing can be performed by a vapor phase growth reaction from a processing gas activated on the surface of a substrate to be processed. Therefore, according to the apparatus having such a structure, since the activated processing gas is supplied to the substrate, it is possible to form a film while keeping the substrate itself at a relatively low temperature. Thus, for example, in the case of a film forming process, it is possible to lower the temperature of the film forming process and shorten the film forming time.

Next, in the case of substrate undercoating, an oxidizing gas or a reducing gas is passed through a high-temperature heating wire before the processing gas is flown to activate and radicalize these gases, whereby the substrate undercoating can be performed quickly and quickly. It can be implemented effectively. An example of the treatment mainly in a reducing gas atmosphere is a Cu-CVD process. In that case, the organic raw material gas of Cu itself can be activated by a high-temperature heating wire to promote the reaction. Further, a carrier gas (for example, H ₂ ) and an additional gas (for example, H ₂ , H ₂ O,
O ₂ ) can be activated to accelerate the reaction.

As a second method, there is a method in which a plasma generator is installed in a processing gas supply pipe, and radicals are transferred from the plasma generator to a processing chamber. For example, a gas is injected, plasma is generated by a high-frequency induction device, and radicals are transported by gas entrainment. When H ₂ gas is injected as a gas, the H ₂ gas is separated into H radicals, which are electrically neutral. If the pressure is kept at a low level, the radicals are likely to continue to exist. That is, the radicals can be easily transported when the pressure is maintained at a moderately low level. Therefore, the radicals can promote the reaction, perform the base treatment, and the like as described above, and achieve the same effect.

Further, by providing an irradiation device for irradiating the heating wire with ultraviolet rays, the processing gas can be efficiently activated by a catalytic reaction.

According to a third aspect of the present invention, in the film forming apparatus, a cooling device for mounting and cooling the substrate, and the substrate being levitated and supported from the cooling device and capable of being heated by the light source and / or heat source. And a mechanism for performing the operation. Thus, the temperature of the substrate to be processed can be raised and lowered in a short time, and the throughput can be improved.
Further, it is possible to perform annealing at a temperature different from the processing temperature in one annealing after the one processing. Further, in the case of performing an annealing process, for example, after film formation by vapor phase growth, the substrate to be processed can be quickly heated to a predetermined temperature, so that the annealing process can be performed continuously after the film formation. . That is, two processes can be continuously performed in one chamber. Further, by arranging the radiant heater so as to face the substrate on which the film is to be formed, it is possible to heat only the substrate surface by the heat energy rays emitted from the radiant heater and to promote the surface reaction of the substrate,
Thus, a film can be formed on the substrate at a relatively low temperature. In addition, an ultraviolet lamp generally used can be used as a light source and / or a heat source. Thereby, the reaction can be promoted by activating the processing gas. Further, the ultraviolet light source and the infrared light source may be alternately arranged in the same device and used properly.

According to a fourth aspect of the present invention, there is provided a susceptor cover having good heat and / or light transmission between the substrate and the light source and / or the heat source. The process gas is circulated in a space including the substrate surrounded by a susceptor cover.

In general, a single-wafer type film forming apparatus has a structure in which a shower head from which a processing gas is blown out and a substrate are installed so as to face each other. There is a problem that they adhere and cause particle contamination on the substrate. For this reason, the periphery of the substrate has been dealt with by placing the substrate on a holding means (susceptor) and periodically replacing the dirty susceptor. However, if film-forming components adhere to the shower head, there is no drastic measure against this removal, and cleaning is performed during maintenance of the equipment, etc., so that the maintenance cycle is shortened and the operation rate of the equipment is reduced. Problem. In the film forming apparatus of the present invention, the shower head does not exist because the gas flow is a horizontal flow. Since the upper surface of the substrate is a light source or a heat source, a susceptor cover using a material such as quartz glass that transmits heat and light can be provided. For this reason, an anti-adhesion gas flows between a light source such as an ultraviolet or infrared lamp and / or a heat source and the upper surface of the susceptor cover in order to prevent such contamination. This can prevent the processing gas from entering above the susceptor cover, and can always keep the light source and / or heat source clean. Furthermore,
If the anti-adhesion gas enters the processing gas side, the stability, reproducibility and uniformity of the process will be impaired. Therefore, a seal exhaust is taken between the anti-adhesion gas and the processing gas so that both are not mixed. Is preferred.

According to a fifth aspect of the present invention, there is further provided a transport mechanism for taking the susceptor and / or the susceptor cover in and out of the film forming apparatus. As a result, the reaction product of the processing gas adheres to the inner peripheral surface of the susceptor cover, and can be easily removed by washing. Therefore, the reaction product does not adhere to places in the film formation chamber where cleaning is difficult, and a film formation apparatus with good maintainability can be provided. In other words, the susceptor closest to the substrate and the susceptor cover that covers the upper surface of the substrate can be replaced as needed, so that the processing can be continued while always maintaining the environment around the substrate in a clean environment. Therefore, an apparatus with less particle contamination can be provided, or the cleaning cycle of the entire apparatus can be lengthened, and the operation rate of the apparatus can be increased.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIGS.
An embodiment of the present invention will be described. FIG. 1 shows an embodiment of the present invention applied to a thin film vapor phase growth apparatus, in which a substrate W is held by a susceptor 12, and the susceptor 12 has pins 14, which are made of a transparent material such as quartz glass. The susceptor cover 16 is supported. And pin 1
4 are, for example, three, and are fixed so as to fit into recesses or grooves provided in the susceptor cover 16 at three points.
Then, the processing gas is introduced into the space between the susceptor cover 16 and the susceptor 12 from the entrance side, flows in a parallel direction along the substrate, and is discharged to the exhaust side.

The susceptor 12 includes a substrate heating / cooling device 18.
This heating / cooling device is mounted on the upper side, and has a heater and a cooling water flow path therein, so that the substrate W can be heated or cooled through the susceptor 12. Further, the heating / cooling device 18 is fixed to the shaft 10 which can be moved up and down and rotatable, so that it rotates, for example, at the time of film formation so that uniform film formation can be performed. The position of the heating / cooling device 18 shown is the position of the processing state of the substrate W. By lowering the position of the substrate to the height of the loading / unloading port 50, the gate valve 52 is opened and the robot hand 54 holds the substrate W. It can be carried in and out. Similarly, the robot hand 54 similarly takes out the susceptor 12 and the susceptor cover 16 to the outside, and after washing it outside, it can be mounted on the heating / cooling device 18.

When the substrate W is taken out, the heating / cooling device 1
8, the substrate push-up pins 64 fixed to the support base 60 pass through the through holes 18a and contact the substrate W. When the heating / cooling device 18 further lowers, the substrate W floats on the surface of the susceptor 12. State. Then, by inserting the robot hand 54 into this gap, the robot hand 5
4 can carry out the substrate W. Similarly, susceptor 1
2 and a susceptor cover 16 mounted on this support 14
When unloading the susceptor, the heating and cooling device 18 is lowered to the position of the
Is passed through the through-hole 18b of the heating / cooling device 18, and the susceptor 1
2 and is slightly lifted from the upper surface of the heating / cooling device 18 by pushing it up. Then, by inserting the robot hand 54 into the floating gap, the susceptor cover 16 can be taken out of the susceptor 12 from the carry-in / out port 50 as it is placed on the susceptor 12 by the support pins 14.

Above the susceptor cover 16, a light source and / or a heat source 20 composed of an ultraviolet lamp or an infrared lamp are arranged.
Is irradiated. Lamp cover 24 and susceptor cover 16
An anti-adhesion gas composed of, for example, N ₂ flows from the inlet side 22a into the gas flow path between the _two , and is discharged to the outlet side 22b. By the flow of the anti-adhesion gas, the processing gas does not enter the light and / or heat source 20 on the lamp cover 24 side, and the apparatus can be always kept clean. A processing gas flows between the susceptor cover 16 and the substrate W, and the processing gas is activated by the heating wire 30 and flows in parallel along the substrate W to perform processing such as film formation. Since the support pins 14 of the susceptor cover are thin, for example, about three pillars, they hardly affect the flow of the processing gas.

In order to prevent the processing gas and the adhesion preventing gas from being mixed, a seal exhaust port 23 is provided, and the seal exhaust is performed. As a result, most of the processing gas flows into the space between the susceptor cover 16 and the susceptor 12, and most of the deposits such as film forming components are deposited on the surface of the substrate W, the upper surface of the susceptor 12, and the lower surface of the susceptor cover 16. Adheres to However, as described above, since the susceptor cover 16 and the susceptor 12 can be carried in and out of the apparatus, the susceptor can be easily cleaned. Can be kept. As for the loading and unloading of the susceptor cover and the susceptor, these may be loaded and unloaded at the same time, or may be loaded and unloaded separately.

The support base 60 can be moved up and down, and is lifted by a lifting device (not shown) to a position (not shown) where the substrate W comes into contact with the lower surface of the heating / cooling device 18 shown in the figure. State. Thereby, receiving the radiant heat from the light and or the heat source 20,
Since the heat capacity is extremely small, rapid heat treatment can be performed. For example, in the case where annealing is performed after one process is completed, even when the processing temperature needs to be changed, the temperature can be quickly increased to the required temperature.
In addition, cooling water or the like is supplied to the heating / cooling device 18 to keep it in a cooling state, and after the processing is completed, the support table 60 is lowered to bring the substrate W into contact with the surface of the heating / cooling device 18 via the susceptor 12 from the floating state. Thus, rapid cooling is possible.

The gas flow path for supplying the processing gas to the film forming chamber is as follows:
The semiconductor substrate W is introduced from the gas supply pipe 26 into the film formation chamber S,
Flows along the susceptor cover 16 in parallel with the discharge pipe 28.
Is more exhausted. The heating wire 30 is connected to the processing gas inflow pipe 26.
Heating is performed to a high temperature of, for example, about 1000 to 1800 ° C. by flowing a current from a power supply (not shown) to the apparatus. Then, the processing gas flowing through the inflow pipe 26 comes into contact with the high-temperature heating wire (hot wire) 30, and this acts as a catalyst to activate the processing gas.

In a process using a reducing gas as a heating wire, a tungsten, tantalum wire or the like is generally used. However, in the case of a process using an oxidizing process gas, the heating wire is oxidized and deteriorated. For this reason, it is necessary to consider an oxide heating wire or a metal heating wire whose surface is not oxidized even in a high-temperature oxidizing atmosphere. As a candidate thereof, a metal wire such as gold, platinum, silver, rhenium, molybdenum, silicon carbide, tungsten, or tantalum may be used. Thus, even in an oxidizing or corrosive gas atmosphere, these heating wires may not be oxidized and may function as a catalyst.

That is, gold and silver each have a melting point of 106
Since the melting point is 3 ° C. and 960 ° C. and the melting point is relatively low, it can be used at a low temperature. In addition, it is resistant not only to oxidizing gases but also to halogenous gases, and can be used stably at high temperatures for most processing gases. Platinum has corrosion resistance similar to gold and silver, and has a relatively high melting point of 1769 ° C., so that it can be used in processes for higher temperatures. Tungsten oxide is an oxide of tungsten. Tungsten itself usually forms an oxide at a temperature of 400 ° C. or higher. However, if the oxide is densely oxidized in advance, it is almost oxidized even at 800 to 900 ° C. Can be used without progress. A degree of oxidation of about WO _{2.7 to} WO _2.9 is suitable, and if oxidized to WO _{3 in} advance, the heat resistance is further improved but becomes brittle and difficult to use. Silicon carbide (SiC)
Is a ceramic which itself becomes a heating element, has high heat resistance and hardly generates impurities. However, it is considered that at a very high temperature, there is a problem that carbon is slightly oxidized to generate CO ₂ and deteriorate.

Also, coating the heating wire with a non-reactive material such as glass or ceramics is effective for use in a non-reducing atmosphere. The following two types of coating methods can be considered. The first is a method of coating the heating wire itself. This is because if the strands and the coating material have different coefficients of thermal expansion, they will peel off during use.However, if the values are almost the same, such a problem will not occur. Contact in a small state, thereby preventing oxidation of the heating material. As a second method, there is a method in which a space is provided outside the heating wire while keeping a space between the heating wire and the heating wire. In this method, since the coating material does not need to be a heating element, it is possible to protect the heating wire enclosed in the element wire by coating the element wire with non-reactive glass or ceramic. When a transparent material or a transparent material surface coated with a catalytic substance is used as the coating, heating the processing gas with direct radiant heat may be effective in activating the processing gas in some cases. The glass can be used without devitrification up to about 1000 to 1200 ° C. by using, for example, quartz glass.

In the above-described apparatus, the catalyst means for activating the gas for film formation by heating the heating wire 30 disposed in the pipe 26 of the processing gas is provided, and the catalyst means is irradiated with ultraviolet rays. An ultraviolet lamp (not shown) may be provided. Here, as described above, tungsten or tantalum wire is used in the reducing atmosphere as described above, and a metal having corrosion resistance even in an oxidizing or corrosive gas atmosphere such as gold or platinum is used in the oxidizing atmosphere as described above. Alternatively, a heating wire is sealed in a quartz tube or the like, and a metal or the like suitable as the above-mentioned catalyst is attached to the surface thereof. By irradiating the catalyst means 30 heated to a high temperature with ultraviolet rays, the catalytic effect of the catalyst means 30 can be promoted.

It is considered that the catalytic effect largely depends on electrons in the d-orbit of atoms of a substance constituting the catalyst, that is, d electrons. The electrons existing in the d-orbit are emitted by ultraviolet rays to promote exchange of electrons with the catalyst means heated to a high temperature, thereby promoting the reaction. Since the d-orbit is a large orbit, it is considered that even a relatively small activation or dissociation energy of electrons is sufficient. Therefore, it is considered that electrons in the d-orbit can be sufficiently dissociated with the energy of ultraviolet light having a wavelength of 300 to 500 nm. Since the catalysis by the heated heating wire 30 is arranged in the flow path of the processing gas, when the heating wire 30 is irradiated with ultraviolet rays from the ultraviolet lamp 32, the processing gas itself is also irradiated with ultraviolet rays. Therefore, for general ultraviolet light, 18
It contains high energy wavelengths of 5 nm and 254 nm, and the ultraviolet light of that energy may directly irradiate the processing gas itself and decompose. For this reason, as the wavelength of the ultraviolet light for promoting the catalytic action, it is preferable to select a wavelength having a low energy of about 300 to 500 nm.
Thereby, even if the ultraviolet rays directly irradiate the processing gas itself,
There is no effect of directly decomposing the processing gas. Therefore, since the d-electrons of the atoms of the heating wire 30 can be activated by the irradiation of the ultraviolet light having the wavelength, the processing gas is not decomposed by the irradiation of the ultraviolet light itself, but the processing gas is activated by contacting the catalyst means 30. Can be. Therefore,
By irradiating ultraviolet rays, it is possible to activate the processing gas by lowering the heating temperature of the catalyst means itself.

As a method for activating the processing gas, there is a method in which a plasma generator is installed in a processing gas supply pipe, and radicals are transferred from the plasma generator to a processing chamber. For example, a gas is injected to generate plasma by a high-frequency induction device, and radicals are transferred into a processing chamber by gas entrainment.
When H ₂ gas, for example, is injected as a gas, the H ₂ gas is separated into H radicals, which are electrically neutral. Therefore, the wall of the loading path is made of quartz or the like which is not reactive to radicals. If so, the radicals will continue to exist and be transported into the processing chamber. A carrier gas (for example, H ₂ ) or an additional gas (for example, H ₂ , H ₂ O, O ₂ ) flowing together with the source gas can be activated by this method to promote the reaction. That is, radicals can be easily transported if the pressure in the gas supply pipe is appropriately kept at a low pressure. Therefore, the radicals are used to promote the reaction and the base treatment as described above, thereby reducing the processing temperature and shortening the processing time. Obtainable.

As described above, the apparatus shown in FIG. 1 is provided with the push-up pins 64 for floating the semiconductor substrate W to be formed from the susceptor 12 and supporting it. Since the support table 60 can move up and down, the push-up pins 64 can hold the substrate W at a position (floating) separated from the susceptor 12 as shown in FIG. Then, when lowered, the semiconductor substrate W is directly mounted on the susceptor 12. A constant temperature can be maintained by constantly flowing a coolant such as cooling water to the heating / cooling device 18. Therefore, by directly mounting the substrate W on the heating / cooling device in the cooled state, the heating / cooling device has a large heat capacity,
Since the heat capacity of the substrate W is small as described above, the substrate W can be cooled to a predetermined temperature in a very short time. Further, by pushing up the push-up pin 64, the substrate W is held at a floating position. As a result, since the heat capacity of the substrate W is small, the substrate W is rapidly heated using the radiant heater 20, and the temperature is increased to a predetermined temperature. Can be. For example, after the film formation is completed at a predetermined film formation temperature, it is possible to change the heating amount of the radiant heater 20 to change the substrate temperature and shift to the annealing process. Therefore, the substrate W is heated and cooled by radiant heating from above by the radiant heater 20 and by direct contact cooling from below by the cooling device built in the substrate holder 18 so that the substrate W can be cooled in one film forming chamber. Can be rapidly heated and cooled.

FIG. 2B shows a mechanism for carrying the susceptor and the susceptor cover out of the film forming apparatus.
The substrate holding means (susceptor) 12 and the substrate holding means 1
Susceptor cover 1 mounted on support 2 via support 14
6 are pushed up by the push-up pins 62 of the support base 60, and the robot hand 54
Is inserted. The robot hand 54 lifts the susceptor 12, the support 14 and the susceptor cover 16 by moving slightly upward, and moves the susceptor 12 into the loading / unloading port 50. Thereby, the susceptor cover 16 and the like can be carried out of the film forming apparatus. When a susceptor cover or the like is loaded on the heating / cooling device 18 from the outside, the reverse can be performed. Note that the susceptor cover and the susceptor may be separately loaded and unloaded. As a result, the reaction product of the processing gas adheres to the inner peripheral surface of the susceptor cover, and can be easily removed by washing. Therefore,
Reaction products do not adhere to difficult-to-clean locations in the deposition chamber,
A film forming apparatus with good maintainability can be provided.
In other words, the susceptor closest to the substrate and the susceptor cover that covers the upper surface of the substrate can be replaced as needed, so that the processing can be continued while always maintaining the environment around the substrate in a clean environment. Therefore, an apparatus with less particle contamination can be provided, or the cleaning cycle of the entire apparatus can be lengthened, and the operation rate of the apparatus can be increased.

Next, the temperature rise characteristics of the substrate W will be described. The above-mentioned radiation heater uses, for example, the halogen lamp heater 20, and can rapidly raise the temperature of the film formation target substrate by the infrared radiation heat. For example, with a halogen lamp heater, a temperature rise rate of the irradiated object of about 100 ° C./sec can be obtained. FIG. 3A shows a temperature rise characteristic only by a heater built in the substrate holding table 18. When the temperature of the substrate holding table 18 is controlled to be kept constant and the substrate W at room temperature is placed on the holding table 18, the substrate temperature gradually increases because the substrate holding table has a relatively large heat capacity. It takes time to reach the set temperature. Note that the temperature of the holding table slightly decreases due to the mounting of the substrate W at room temperature, but also gradually recovers to the predetermined temperature. On the other hand, in FIG. 3B, a radiation heater is used in combination, and the radiation heat is intensively applied only when the temperature rises as shown by a dotted line, so that the substrate temperature is rapidly set to a predetermined value. Temperature can be reached. Further, it is preferable that the holding table 18 be provided with a cooling device such as a gas cooling pipe together with the heater. As a result, the portion heated extra in the previous process can be cooled, and a reproducible process can be realized. Further, FIG. 3C shows an example in which the substrate holder is heated only by a radiation heater when the substrate holder is for cooling.
The same heating rate as in (b) can be obtained.

Further, an annealing process after the film forming process can be performed using a radiant heater. Since the temperature of the annealing process is generally higher than the film forming temperature, the substrate push-up pins 64 built in the heating table 18 are used as shown in FIG.
The radiant heating is performed so as to be floated from the substrate holding table 18 and separated from the heating table or the cooling table and not affected by the heating table or the cooling table. Thereby, the temperature can be raised to a temperature higher than the substrate temperature at the time of film formation in a short time.
Annealing treatment can be performed by flowing _two gases or the like.

FIG. 4 shows a modification of the substrate heating mechanism of the present invention. In this embodiment, the heater 34 built in the substrate holder 18 is a radiation heater. The semiconductor substrate W is supported by the pins 64, as shown in FIG.
The radiant heater 20 provided on the upper portion of the substrate W and the radiant heater 34 provided on the lower portion of the substrate W as in the embodiment shown in FIG. Substrate holder 18 with built-in radiation heater 34
Is made of a transparent quartz plate 58 so as to transmit radiant heat well and not react to corrosive gas. The heating / cooling device 18 having the radiant heater 34 built therein is provided with a heater cooling gas flow path 36. Since the heating and cooling device 18 has a small heat capacity, it can be easily cooled. Accordingly, with such a structure, the temperature of the substrate on which a film is to be formed can be changed at a faster response speed, and it is possible to respond to a demand for a process under more severe temperature conditions.

The transparent quartz plate 58 can be replaced by a method such as carrying it out, cleaning it, and then carrying it in because the film-forming components adhere to the surface. That is, the push-up pins 62 and 64 are provided below the substrate holding table 18.
4A, and is held at a position floating above the quartz plate 58 by the push-up pins 64 at the time of radiation heating or at the time of replacement of the substrate W to be processed, as shown in FIG. As shown in FIG. 4B, the quartz plate 58 is floated and supported by the push-up pins 62 from the substrate holding table 18, and a robot hand (not shown) is inserted into the gap to carry the quartz plate 58 to the outside. can do.

When the processing gas G flows in parallel along the substrate W, generally speaking, the distribution of the film forming speed along the gas flow direction is not uniform. For this reason, it is preferable that the substrate holder 18 be rotated to make the film thickness distribution on the substrate W uniform.

FIG. 5 is a view of the flow path of the processing gas as viewed from above. The gas flow path is expanded from the inflow side pipe (gas supply pipe) 26 by the rectifying plate 40, flows on the substrate W,
The light is converged again by the current plate 40 and is connected to the outflow side pipe 28. It is preferable that the flow path width A viewed from the upper surface of the processing gas is variable. In general, the deposition rate in vapor phase growth correlates with the diffusion rate when the diffusion is controlled. That is, Diffusion rate = D / δ (Pb−Ps) where D: Diffusion coefficient δ: Boundary layer thickness Pb: Mainstream processing gas partial pressure Ps: Processing gas partial pressure on substrate surface According to the above equation, the boundary layer As the thickness δ decreases, the diffusion speed (film formation speed) increases. That is, by reducing the flow channel width A, the flow velocity of the main flow increases, and the boundary layer thickness δ can be reduced. However, there is a limit in reducing the channel width A. In other words, when the flow is disturbed due to a step in the structure of the apparatus, the pressure difference between the center and the outer periphery of the substrate increases, or the change is not linear, and uniformity is obtained even when the substrate is rotated. Such as when it is no longer possible. In such a case, it is preferable that the flow path width A can be adjusted so as to obtain the optimum condition.

[0043]

As described above, according to the present invention, by providing a radiant heater on the upper surface of the substrate to be formed, the rate of temperature rise of the substrate can be improved. By arranging the heat rays, the processing gas can be activated without increasing the temperature of the substrate itself. Therefore,
It is possible to provide a film forming apparatus having a high throughput and capable of performing a vapor phase growth at a relatively low temperature.

[Brief description of the drawings]

FIG. 1 shows a film forming apparatus (vapor phase growth apparatus) according to an embodiment of the present invention.
It is sectional drawing which shows the outline of.

2A is a diagram showing a case where a substrate W is held at a position separated from a heating / cooling device in the apparatus of FIG. 1, and FIG. 2B is a diagram showing a susceptor cover or the like carried in and out by a robot hand; FIG.

3A and 3B are diagrams showing a rise in substrate temperature, wherein FIG. 3A shows a temperature rise characteristic by a heater of a heating table, and FIG. 3B shows a temperature rise characteristic when a substrate heater and a radiation heater are used together. (C) shows a temperature rise characteristic when a cooling device is built in the substrate holding table.

FIG. 4 is a view showing a modification of the substrate heater, showing a case in which radiation heaters are arranged on the upper and lower sides of the substrate; FIG. 4 (a) shows a state in which the substrate is levitated and supported;
Indicates a state in which the quartz plate is supported by floating.

FIG. 5 is a diagram showing a configuration example of a gas flow channel in the film forming apparatus shown in FIG.

FIG. 6 is a diagram illustrating a configuration example of a conventional film forming apparatus.

FIG. 7 is a diagram showing a configuration example of a film forming apparatus using a conventional catalytic method.

[Explanation of symbols]

 12 Container Main Body 14 Container Bottom 18 Substrate Holder 20, 34 Radiant Heater 24 Radiant Surface (Heating Surface) 26 Gas Inlet Channel (Gas Supply Pipe) 28 Gas Outlet Channel 30 Heat Wire (Catalytic Heating Wire) 21 Push-Up Pin 36 Gas Cooling Pipe 38 Gas port 40 Rectifier plate S Film formation chamber W Semiconductor substrate (wafer)

Claims (5)

[Claims] And a light source and / or a heat source arranged to face the substrate held by the holding means for holding the substrate, and a light source and / or a heat source disposed between the substrate and the light source and / or the heat source. A gas flow path for allowing a gas to flow in a space therebetween in parallel with the substrate surface. 2. The apparatus according to claim 1, further comprising an activation unit for activating a gas in the gas flow path upstream of a space between the substrate and the light source and / or the heat source. Film forming equipment. 3. The film forming apparatus includes a cooling device for mounting and cooling a substrate, and a mechanism for supporting the substrate by floating from the cooling device and heating the substrate with the light source and / or the heat source. The film forming apparatus according to claim 1, wherein: 4. A susceptor cover having good heat and / or light transmittance between the substrate and the light source and / or the heat source, wherein the susceptor on which the substrate is mounted and the susceptor cover are surrounded by the susceptor cover. The film forming apparatus according to claim 1, wherein the gas is circulated in a space including the substrate. 5. The film forming apparatus according to claim 4, further comprising a transport mechanism for taking the susceptor and / or the susceptor cover into and out of the film forming apparatus.