JP2001260002A - Chemical machine polishing device and pad dressing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To regenerate a polishing surface without impairing global flatness of the polishing surface so as to perform stable polishing in dressing. SOLUTION: A dressing system 11b of a CMP device 11 dresses a polishing pad 15 by grinding a polishing surface 15a of the polishing pad 15 after rotating a surface plate 13 and mounting members 251, 252 by mutually parallel rotational shafts in a state where respective grinding surfaces 231a, 232a (which are different from each other) of a plurality of grinding members 231, 232 are simultaneously brought into contact with the polishing surface 15a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a chemical mechanical polishing apparatus and a pad dressing method.

[0002]

2. Description of the Related Art Conventionally, chemical mechanical polishing (CMP: Che
mechanical MechanicalPolish
g) The apparatus is used in a semiconductor device manufacturing process. A CMP apparatus enables flattening of an insulating film or a metal film over a relatively wide area, and has recently been receiving attention as a flattening technique replacing etching, despite being a relatively old technique. .

FIG. 7 is a view schematically showing a conventional CMP apparatus, and only the main parts thereof are shown in order to explain a polishing system and a dressing system of the CMP apparatus.

[0004] As shown in FIG.
1 comprises a polishing system 101a and a dressing system 101b.

The polishing system 101a includes a rotating surface plate 103.
A polishing pad 105 provided on the surface plate 103 and having a polishing surface 105a; and a holding device for holding the member to be polished 107 such that the surface to be polished 107a of the member to be polished 107 faces the polishing surface 105a. The member 109 and the holding member 1
09 to rotate the polishing system driving unit 111.

In the polishing system 101a of the CMP apparatus 101,
With the polished surface 105a in contact with the surface to be polished 107a, the platen 103 and the holding member 109 are rotated on mutually parallel rotation axes. This makes it possible to polish and flatten the surface to be polished 107a of the member to be polished 107 (polishing).

As is well known, when the member to be polished 107 is polished, particles due to a chemical reaction of a polishing solvent, pad debris of the polishing pad 105, fine particles of the member to be polished 107, etc., are polished on the polishing surface 105a of the polishing pad 105. After polishing a large number of the members to be polished 107, clogging or the like occurs on the polished surface 105a, and as a result,
Micron-order irregularities that the polishing surface 105a should have are lost. In this case, the member to be polished 107 cannot be efficiently polished.

In order to avoid this, a general CMP apparatus 101 has a dressing system 101b. The dressing system 101b includes a grinding member 113 having a grinding surface 113a, a mounting member 115 for attaching the grinding member 113 such that the grinding surface 113a faces the polishing surface 105a,
Dressing system drive unit 11 for rotating attachment member 115
And 7.

Usually, grinding particles, which are fine particles for grinding the polished surface 105a, are arranged on the grinding surface 113a of the grinding member 113.

The dressing system 101 of the CMP apparatus 101
In b, the grinding surface 113a of the grinding member 113 is
5a, the platen 103 and the mounting member 11
5 are rotated on rotation axes parallel to each other. Thus, the polishing surface 105a of the polishing pad 105 is ground and flattened. According to the CMP apparatus 101, a new polishing surface can be formed by physically grinding the polishing surface 105a of the clogged polishing pad 105, so that the polishing pad 105 can be polished again ( Hereinafter, the work or process is referred to as “dressing” or pad dressing.)

[0011]

However, in the conventional CMP apparatus, when the dressing is performed, the grinding amount of the polishing surface of the polishing pad is determined by the number of grinding particles in contact with a unit area in the polishing surface. Is proportional to Further, when the particles for grinding are uniformly arranged in the grinding surface, the amount by which the polishing surface of the polishing pad is ground depends on the length of the unit area in the polishing surface in contact with the grinding surface. different. Therefore, although the details will be described in the embodiment, the grinding amount inevitably occurs in the polishing surface of the polishing pad, and therefore, when dressing is performed, the polishing surface of the polishing pad has a micron order. Even if the irregularities can be reproduced, the global flatness of the polished surface is impaired. For this reason, the conventional CMP apparatus cannot regenerate the polished surface so that stable polishing is possible. In addition, for example, when a conventional CMP apparatus is used in a semiconductor device manufacturing process, there arises a problem in fine processing such that a required flatness of a substrate or a film cannot be obtained.

Therefore, there is a demand for a CMP apparatus and a pad dressing method capable of regenerating a polished surface without impairing the global flatness of the polished surface so that stable polishing can be performed when performing dressing. Was.

[0013]

SUMMARY OF THE INVENTION Therefore, a CM of the present invention is disclosed.
The P device is configured as follows. CMP of the present invention
The apparatus includes a polishing pad provided on a rotating platen, and a dressing system for grinding a polishing surface of the polishing pad. The dressing system has a plurality of grinding members each having a different grinding surface from each other and grinding particles are arranged on the grinding surfaces, and the respective grinding members are arranged such that each grinding surface of the plurality of grinding members faces the polishing surface. It has a plurality of mounting members for mounting the grinding members, and a plurality of driving units for rotating the respective mounting members. In the CMP apparatus of the present invention, the polishing pad is dressed with a plurality of grinding members.

In this configuration, a plurality of grinding members each having a different grinding surface are used, and the polishing pad is dressed with the plurality of grinding members. Therefore, although the details will be described in the embodiments, for example, the arrangement density of the grinding particles on the grinding surface of each grinding member, the arrangement pattern of the grinding particles on the grinding surface, the arrangement position of the grinding member on the polishing pad, or By adjusting parameters such as the size of the grinding surface, it is possible to reduce the variation in the amount of grinding within the polishing surface of the polishing pad as compared with the conventional configuration in which dressing is performed with one polishing member. Therefore, the polishing pad can be dressed without impairing the global flatness of the polishing surface.

The term "different grinding surface" as used herein means, as will be described later, a grinding surface having a different arrangement density of grinding particles, a grinding surface having a different arrangement pattern of grinding particles, or a different material of the grinding particles. It means a ground surface or a ground surface having different sizes of grinding particles.

In the implementation of the CMP apparatus of the present invention, preferably, the plurality of grinding members include a first grinding member and a second grinding member on which the grinding particles are arranged so that the arrangement patterns are different from each other. It is preferable that the arrangement pattern of the grinding particles on the grinding surface of the first grinding member is a circular ring shape, and the arrangement pattern of the grinding particles on the grinding surface of the second grinding member is a disk shape.

In this case, although the details will be described later in the embodiments, the first grinding member has a characteristic of mainly grinding a region far from the rotation center of the grinding member, and the second grinding member has a characteristic of grinding. Since it mainly has a characteristic of grinding a region close to the rotation center of the polishing pad, dressing can be performed by combining these characteristics successfully, and therefore, the variation of the grinding amount within the polishing surface of the polishing pad can be more efficiently performed. Can hardly occur.

In implementing the CMP apparatus of the present invention, it is preferable that the arrangement densities of the particles for grinding are different from each other among a plurality of grinding members.

As described above, by making the arrangement densities of the grinding particles different from each other, the shortage of the amount of grinding generated by one grinding member can be compensated by another grinding member having a lower arrangement density. In addition, the amount of grinding for each grinding member can be set finely so as to reduce the variation in the total amount of grinding by the plurality of grinding members.

In this application, the arrangement pattern is a planar arrangement pattern viewed from a direction perpendicular to each grinding surface.
The arrangement density is the number of grinding particles arranged per unit area of the grinding surface.

Further, in implementing the CMP apparatus of the present invention, preferably, the arrangement density of the particles for grinding is the same among a plurality of grinding members, and the arrangement pattern of at least one grinding member is formed. It is preferable that the apparent arrangement density of the grinding particles during rotation is varied.

As described above, even when a plurality of grinding members having the same actual arrangement density of the grinding particles are used, by forming the arrangement pattern on at least one of the grinding members, the apparent appearance of the grinding particles during rotation can be improved. The above arrangement density can be different. Generally speaking, it is difficult to say that many types of grinding particles are supplied with commercially available grinding members in terms of the arrangement density of the grinding particles. for that reason,
For example, even if the optimum arrangement density can be obtained by simulation, it is difficult to obtain a ground member having the desired arrangement density. However, if the arrangement pattern is appropriately adjusted in this way, by utilizing the fact that the apparent arrangement density averaged in the rotational plane can be controlled, a grinding member having a desired arrangement density can be easily obtained. .

A pad dressing method according to the present invention is directed to a chemical mechanical polishing apparatus comprising: a polishing pad provided on a rotating surface plate; and a dressing system for grinding a polishing surface of the polishing pad. It is used for dressing the polishing pad. In the pad dressing method of the present invention, the dressing system is constituted by a mounting member for mounting the grinding member such that the ground surface of the grinding member faces the polishing surface, and a driving unit for rotating the mounting member, By preparing a plurality of grinding members having different grinding surfaces as grinding members and grinding particles arranged on the grinding surfaces, and replacing the plurality of grinding members with mounting members, each of the replaced grinding members The polishing pad is sequentially dressed.

According to this configuration, the polishing pad is sequentially dressed for each grinding member while replacing a plurality of different grinding members. Therefore, although the details will be described in the embodiments, for example, the arrangement density of the grinding particles on the grinding surface of each grinding member, the arrangement pattern of the grinding particles on the grinding surface, the arrangement position of the grinding member on the polishing pad, or By adjusting parameters such as the size of the grinding surface, the variation in the amount of grinding in the polishing surface of the polishing pad can be less likely to occur compared to the conventional configuration in which dressing is performed with one polishing member. Therefore, the polishing pad can be dressed without impairing the global flatness of the polishing surface.

In carrying out the pad dressing method of the present invention, preferably, the plurality of grinding members are first and second grinding members, and each of the first and second grinding members has a grinding surface. The particles are arranged so that their respective arrangement patterns are different from each other, and the arrangement pattern of the grinding particles on the grinding surface of the first grinding member is formed in a circular ring shape, and the arrangement pattern of the grinding particles on the grinding surface of the second grinding member is set. It is good to make a disk shape.

In this case, although the details will be described later in the embodiment, the first grinding member has a characteristic of mainly grinding a region far from the rotation center of the grinding member, and the second grinding member has a characteristic of grinding. Has a characteristic of mainly grinding a region near the center of rotation of the polishing pad, and these characteristics can be successfully combined and sequentially dressed.Therefore, the grinding amount can be more efficiently reduced within the polishing surface of the polishing pad. Variations can be reduced.

In carrying out the pad dressing method of the present invention, it is preferable that the arrangement densities of the grinding particles are different from each other among a plurality of grinding members.

As described above, by making the arrangement densities of the grinding particles different from each other, the shortage of the amount of grinding generated in one grinding member can be compensated for by another grinding member having a lower arrangement density. In addition, the amount of grinding for each grinding member can be set finely so as to reduce the variation in the total amount of grinding by the plurality of grinding members.

In carrying out the pad dressing method of the present invention, preferably, the arrangement density of the particles for grinding is the same among a plurality of grinding members, and the arrangement pattern of at least one grinding member is formed. ,
It is preferable that the apparent arrangement density of the grinding particles during rotation is varied.

As described above, even when a plurality of grinding members having the same actual arrangement density of the grinding particles are used, by forming the arrangement pattern of the grinding particles, the apparent appearance of the grinding particles during rotation can be improved. Can have different arrangement densities. Generally speaking, it cannot be said that many types of arrangement density of the grinding particles are supplied in commercially available grinding members. Therefore, even if the optimum arrangement density is obtained by simulation or the like, it is difficult to obtain a ground member having the desired arrangement density. However, as described above, if the arrangement pattern is appropriately adjusted, by utilizing the fact that the apparent arrangement density averaged in the rotating plane can be controlled, a grinding member having a desired arrangement density (apparent arrangement density) can be obtained. Can be easily obtained.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to the drawings, an embodiment of a CMP apparatus and a pad dressing method according to the present invention will be described below. It should be noted that the drawings used in this description merely schematically show the shapes, sizes, and arrangements of the components so that the present invention can be understood. In each drawing, the same components are denoted by the same reference numerals, and overlapping description may be omitted. In the drawings, portions other than the cross section are indicated by hatching or the like to emphasize the relevant portions.

(First Embodiment) FIG. 1 is a diagram schematically showing a main configuration of a CMP apparatus according to a first embodiment, and particularly shows a schematic configuration of a dressing system.
FIG. 2 is a view for explaining the overall configuration of the CMP apparatus according to the first embodiment, and shows the configurations of a dressing system and a polishing system. Hereinafter, referring to FIGS. 1 and 2,
The configuration of the CMP apparatus according to the first embodiment will be described.

As shown in FIGS. 1 and 2, the CMP apparatus 11 includes a polishing system 11a and a dressing system 11b.

As shown in FIG. 2, the polishing system 11a includes a rotating surface plate 13, a polishing pad 15 provided on the surface plate 13 and having a polishing surface 15a, and a polishing target member 17 to be polished. It has a holding member 19 that holds the member 17 to be polished so that the surface 17a faces the polishing surface 15a, and a polishing system drive unit 21 that rotates the holding member 19. This polishing system 1
1a is configured similarly to the conventional polishing system shown in FIG.

The CMP apparatus 11 shown in FIG. 2 has a polishing solvent supply section 11c for supplying a different polishing solvent (slurry) to the polishing surface 15a in accordance with the material of the member 17 to be polished. The polishing solvent supplied at the time of polishing is thinly extended between the polishing surface 15a and the surface to be polished 17a by centrifugal force or the like by the platen 13.

Generally, in the CMP process, as shown in FIG. 2, the platen 13 and the holding member 19 are rotated while pressing the polishing surface 15a against the surface 17a to be polished.
At this time, near the surface of the polished surface 17a, a chemical reaction between the polished member forming material and the polishing solvent and physical friction with the polished surface 17a occur. Is scraped and flattened. CMP device 11
Is to polish the member to be polished 17 as described above.

On the other hand, as shown in FIGS. 1 and 2, the dressing system 11b includes a first grinding member 231 having a first grinding surface 231a different from each other, a second grinding member 232 having a second grinding surface 232a, Attachment members 251 and 252 for attaching the grinding members 231 and 232 such that the first grinding surface 231a and the second grinding surface 232a face the polishing surface 15a, and a dressing system drive unit 271 and 272 for rotating the attachment members 251 and 252. And

The dressing system 11b of the CMP apparatus 11 shown in FIG. 1 and FIG. 2 has the surface plate 13 and the mounting member 251 and the grinding surface 231a and 232a of the grinding members 231 and 232 in contact with the polishing surface 15a. The polishing pad 15 is dressed by rotating the polishing pad 252 with rotation axes parallel to each other and grinding the polishing surface 15 a of the polishing pad 15.

The first grinding member 2 of the first embodiment
31 and the respective grinding surfaces 231a and 231 of the second grinding member 232
32a is provided with grinding particles, and a grinding surface 231 is provided.
The arrangement density of the particles for grinding is different from each other for each of a and 232a.

FIG. 3 is a view for explaining a grinding member according to the first embodiment. In addition, in order to explain parameters such as an arrangement relation of each grinding member in a simulation described later, an extension surface (polishing) is used. 2 shows the polishing pad when viewed from a direction perpendicular to (surface).

As shown in FIG. 3, each of the first grinding member 231 and the second grinding member 232 is a circular plate,
Diamond particles, which are an example of grinding particles, are arranged on all or a part (indicated by hatching in the figure) of the ground surfaces 231a and 232a that are flat surfaces.

Here, as shown in FIG. 3, in the first grinding member 231, the arrangement pattern of the particles for grinding on the first grinding surface 231 a is a circular ring shape. First grinding surface 231a
In the above, diamond particles are arranged at a uniform arrangement density between two concentric circles constituting a ring.

On the other hand, the second grinding member 232 has a disk-shaped arrangement pattern of the particles for grinding on the second grinding surface 232a. That is, diamond particles are arranged on the second ground surface 232a in a circular shape and at a uniform arrangement density within the circle.

Here, referring to FIG. 1 and FIG.
The operation when the apparatus performs pad dressing will be described.

The CMP apparatus 11 shown in FIGS. 1 and 2 is different from the CMP apparatus shown in FIG.
52 is provided. Then, the first and second grinding members 231 and 232 are attached to the respective attachment members 251 and 252,
Dressing the polishing pad 15.

In the conventional CMP apparatus shown in FIG. 7, the polished surface is ground by bringing the ground surface of one grinding member into contact with the polished surface. Grinding surfaces 231a and 232a of 231 and 232
The polishing surface is ground while the polishing pad 15 is in contact with the polishing surface 15a of the polishing pad 15.

Next, a simulation result of the CMP apparatus according to the first embodiment will be described. First grinding member 2
When each parameter is set as follows for the 31 and the second grinding member 232, the grinding amount at each position of the polishing pad (the amount to grind the polishing pad) is represented by a function G shown below. Since the surface plate is rotating, the grinding amount G does not depend on the angle θ in the polar coordinates ( _RT , θ), and the function G of the distance _RT from the center of the surface plate is not affected.
( _RT ).

As shown in FIG. 3, in the first grinding member 231, the distance between the rotation center of the platen 13 and the rotation center of the first grinding member 231 is R _X , and the circular grinding surface 231 a has a ring shape. Grinding particles are arranged in the arrangement pattern of
The outer radius of the ring is R ₁ and the inner radius is R ₂ . On the other hand, in the second grinding member 232, the distance between the rotation center of the platen 13 and the rotation center of the grinding member 232 is _RY , and the grinding particles are arranged on the entire surface of the circle on the circular grinding surface 232a. And its radius is R ₃
And

Further, the ratio of the arrangement density of the first and second grinding members is K (where K is the arrangement density of the second grinding member / the first arrangement ratio).
This is the arrangement density of the grinding members. )far. In addition, each arrangement pattern in each of the grinding members 231 and 232 in FIG. 3 has a conventionally known shape.

[0050] When using such first and second grinding members, the grinding amount G (R _{T) is, G (R T) = 2R} T (acos ((R T 2 + R X 2 -R 1 2) / _{2R T R X) -acos ((} R T 2 + R X 2 -R 2 2) / 2R T R X) + Kacos ((R T 2 + R Y 2 -R 3 2) / 2 R T R Y)) ·· (1) (where acos means arccos).

In the equation (1), R_TPredefined domain of
(That is, R to be used for polishing_TRange R _eff)
Cutting amount G (R_T) For the maximum and minimum values of
Find the arrangement density ratio K that minimizes the difference between the value and the minimum value.
You. Grinding amount G (R_T) Is the smallest difference between the maximum and minimum values
When it decreases, the variation in the amount of grinding becomes the smallest.

Here, the region R _eff to be polished in the polishing surface of the polishing pad is set to, for example, 5 mm from the center of the platen.
cm to 25 cm (grinding range). At this time,
To dress this range, for example, R ₁ , R ₂ ,
R ₃ , R _X and R _Y are R ₁ = 16 cm and R ₂ = 1, respectively.
5.5 cm, R ₃ = 10 cm, R _X = 17 cm and R _Y =
It can be 10 cm.

FIG. 4 is a diagram showing the amount of grinding G ( _RT ) when the first and second grinding members are used in the CMP apparatus of the first embodiment under the above conditions. FIG. 4 (B) is an enlarged view of the graph of FIG. 4 (A) in the vertical axis direction. Here, the optimized arrangement density K (K = 0.01
The grinding amount G ( _RT ) at the time of 5) is shown. In FIG.
The horizontal axis is the distance R _T (cm) from the rotation center of the surface plate,
The vertical axis indicates the grinding amount G (anonymous number). On the other hand, FIG. 5 is a diagram showing a grinding amount F (R _T ) when only the first grinding member is used in the conventional CMP apparatus, and FIG. 5 (B) shows the graph of FIG. It is the figure expanded in the direction. In FIG. 5, the horizontal axis represents the distance R _T (cm) from the center of rotation of the platen, and the vertical axis represents the grinding amount G (infinite number).

When only the first grinding member is used, the grinding amount F
(R _{T) is, F (R T) α2R T} (acos ((R T 2 + R X 2 -R 1 2) / 2R T R X) -acos ((R T 2 + R X 2 -R 2 2) / 2R _T R _X) represented by (2).

As can be understood from FIG. 5 (especially FIG. 5B), in the case of a conventional CMP apparatus using only the first grinding member, the first grinding member is used in a grinding range of a distance R _T = 5 to 25 cm. , A downwardly convex curve having one minimum value appears, and the grinding amount F at a distance R _T = 6 cm.
(R _T ) takes the minimum value (minimum value) F (6) = 1.0,
When the distance R _T = 25 cm, the grinding amount F (R _T ) is the maximum value F
(25) = 1.5 is taken. That is, the grinding range is set to the distance R
_{When T} is limited to 5 to 25 cm, the variation of the grinding amount is 1.5-1.0 = 0.5.

On the other hand, as can be understood from FIG. 4 (particularly, FIG. 4B), the CMP apparatus of the first embodiment using the first and second grinding members is different from the conventional apparatus of FIG. Similarly, in the grinding range of the distance R _{T of 5 to} 25 cm, a downwardly convex curve (the curve shown by a broken line in the figure) having one minimum value appears due to the contribution of the first grinding member. However,
In the case of FIG. 4, in the grinding range of the distance R _T = 5 to 20 cm, an upwardly convex curve having one maximum value appears due to the contribution of the second grinding member.

The difference between the maximum value and the minimum value in the grinding amount G (R) becomes smallest at the arrangement density ratio K = 0.015. When the arrangement density ratio K = 0.015, as shown in FIG. 4, at a distance R _T = 20 amount of grinding G (R _T) takes a minimum value G (20) = 1.2, the distance R _T = 25 , The grinding amount G ( _RT ) takes the maximum value G (25) = 1.5. That is, when the grinding range is limited to the distance R _T = 5 to 25 cm, the variation in the grinding amount is 1.5−1.2 = 0.3.

From a different point of view, in the process of this optimization, the arrangement density of the grinding particles differs greatly among the plurality of grinding members so that the arrangement density ratio becomes K = 0.015. This means that the shortage of the amount of grinding generated in the first grinding member having a high arrangement density is compensated for by the second grinding member having a lower arrangement density. As described above, it is preferable to use a grinding member having at least a different arrangement density among the parameters to be optimized in that the amount of grinding for each grinding member can be set more finely.

[0059] In the case of using only the first grinding member, when the distance R _T from the center of rotation of the platen has a range of 5~25cm grinding range, grinding amount of variation 0.5, therefore, constant The variation of the grinding amount per rotation of the platen is about 33% of the maximum grinding amount per rotation of the surface plate (0.5 / 1.
5 given. ).

On the other hand, when the first and second grinding members are used
The distance R from the center of rotation of the surface plate _TIs 5-25cm
When the range is the grinding range, the variation in the grinding amount is 0.3
Therefore, the variation in the amount of grinding per rotation of the surface plate
The key is approximately 20% of the maximum grinding amount per rotation of the surface plate.
(Given by 0.3 / 1.5).

As can be understood from the simulation results, the structure of the first embodiment in which dressing is performed by using the first and second grinding members simultaneously is different from the conventional structure in which dressing is performed using only the first grinding member. According to this, the variation in the grinding amount can be reduced from about 33% to about 20%.

As described above, by performing dressing using the first and second grinding members having different grinding surfaces from each other, as in the simulation example described above,
Adjust the parameters such as the arrangement density of the grinding particles on the grinding surfaces of the first and second grinding members, the arrangement pattern of the grinding particles on the grinding surfaces, the arrangement position of the grinding members on the polishing pad, or the size of the grinding surface. By doing so, it is possible to make it difficult to cause variation in the amount of grinding in the polishing surface of the polishing pad. Therefore, the polishing pad can be dressed without deteriorating the global flatness of the polishing surface as compared with the related art.

In the first embodiment, the first grinding member has a circular ring shape, and the second grinding member has a disk shape. However, the first grinding member is not limited to the circular ring shape. Even if both of the members are ring-shaped, such variations can be reduced by adjusting and optimizing the arrangement density and size of the members or the arrangement relationship on the polishing pad.

Such an effect can be obtained even if, for example, the material of the grinding particles and the size of the grinding particles are different among the parameters of the grinding surface to be optimized.

In the above description, the mounting members 251 and 252
Has its driving parts 271 and 272, but does not necessarily need to have a power mechanism. In other words, as long as there is a mechanism that can rotate, by contact with the polishing surface 15a, it rotates in a so-called "turn around", and exhibits a dressing function. Even with such a configuration, the effects of the invention are not lost.

(Second Embodiment) In the above-described first embodiment, an example in which two grinding members having different arrangement densities are used has been described. In the second embodiment, however, in particular, An embodiment using grinding members having the same arrangement density will be described.

However, the configuration of the CMP apparatus according to the second embodiment is the same as the configuration of the CMP apparatus according to the first embodiment described with reference to FIGS. 1 and 2, and a description thereof will be omitted.

FIG. 6 is a view for explaining a grinding member according to the second embodiment. As shown in FIG. 6, the first grinding member 291 and the second grinding member 292 used in the second embodiment are circular plate bodies, respectively, and the grinding surfaces 291a and 292a which are flat surfaces are Diamond particles, which are examples of grinding particles, are arranged on all or a part (indicated by hatching in the figure).

As shown in FIG. 6A, the first grinding member 2
Reference numeral 91 is the same as the first grinding member 231 shown in FIG. 3, and the arrangement pattern of the particles for grinding on the first grinding surface 291a is a circular ring shape. On the first grinding surface 231a,
Diamond particles are arranged at a uniform arrangement density between two concentric circles constituting a ring.

On the other hand, the second grinding member 292 is shown in FIG.
As shown in FIG. 5, the first grinding member 291 has a grinding surface 292a having a different arrangement pattern from the first grinding member 291. The arrangement pattern of the particles for grinding on the grinding surface 292a includes a plurality of patterns extending radially from the center of the circle to the circumference. Is a shape composed of the line segments. However, diamond particles are arranged on the second grinding surface 292a with a uniform arrangement density within a line segment, and the arrangement density is the same as the arrangement density on the first grinding surface 291a.

When the second grinding member 292 rotates, the radially arranged line segments move one after another at high speed within the grinding surface 292a, so that the apparent arrangement density of the grinding particles on the grinding surface 292a ( The average arrangement density over the entire grinding surface) can be regarded as uniform within the grinding surface 292a. Therefore, the grinding surface 292a of the second grinding member 292
Can be considered to be the same as the arrangement density of the second grinding member of the first embodiment having the disk-shaped arrangement pattern.

Therefore, in the second embodiment, the same effect as in the first embodiment can be obtained. Further, the ratio between the “apparent arrangement density” of the second grinding member 292 and the arrangement density of the first grinding member 291 is determined by the first ratio.
In the same manner as in the embodiment, K is set to 0.015, that is, the particles for grinding are set to 0.015 with respect to the area within the second grinding surface 292a at the same arrangement density as the first grinding surface 291.
(1.5%), the simulation results are substantially the same.

At present, only about two or three types of grinding members having different arrangement densities are sold by the respective vendors that sell the grinding members. Therefore, when the first embodiment is implemented. However, even if the optimum value of the arrangement density ratio K can be obtained by simulation or the like, a grinding member corresponding to the arrangement density ratio K may not be available.

However, in the above-described second embodiment, the arrangement pattern of the particles for grinding on the grinding surface of the second grinding member is formed. Therefore, between a plurality of grinding members,
Even if the arrangement density of the grinding particles per unit area is the same, the apparent arrangement density can be made different, and the second grinding member having a desired arrangement density can be easily formed.

(Third Embodiment) Here, an embodiment of a pad dressing method according to the present invention will be described.
In the third embodiment, a CMP apparatus similar to the conventional configuration is used. Hereinafter, a pad dressing method according to the third embodiment will be described with reference to FIG. 7 used for describing the prior art and FIGS. 3 and 6 showing the grinding member according to the first or second embodiment. .

According to the third embodiment, even when a conventional CMP apparatus as shown in FIG. 7 is used, a pad dressing method capable of obtaining the same effect as the CMP apparatus of the first or second embodiment can be obtained. I will provide a. In the following, in order to avoid redundant description, matters relating to the conventional CMP apparatus are partially omitted.

As described above, the conventional CMP shown in FIG.
The apparatus 101 includes a polishing system 101a and a dressing system 10.
1b.

As shown in FIG. 7, the polishing system 101a includes a rotating platen 103, a polishing pad 105 provided on the platen 103 and having a polishing surface 105a, and a polishing target member 107 to be polished. Holding member 10 for holding member to be polished 107 such that surface 107a faces polishing surface 105a
9 and a polishing system driving unit 111 for rotating the holding member 109
And

The dressing system 101b includes one grinding member 113, a mounting member 115 for mounting the grinding member 113, and a dressing system driving unit 117 for rotating the mounting member 115.

In the third embodiment, when the polishing pad 105 of the conventional CMP apparatus 101 shown in FIG. 7 is dressed, the grinding member 113 shown in FIG.
(Or FIG. 6) having a different ground surface.
Grinding member 231 (or 291) and second grinding member 23
2 (or 292) is prepared, and the grinding members 231 and 232 are replaced with the mounting member 115, so that the polishing pad 105 is dressed sequentially for each replaced grinding member.

When pad dressing is performed by the CMP apparatus 101, first, the first grinding member 231 shown in FIG.
Is attached to the attachment member 115, the first grinding member 2
The polished surface 105a is ground by bringing the 31 ground surface 231a into contact with the polished surface 105a.

The polishing surface 105a is formed by the first grinding member 231.
After grinding, the first grinding member 231 is removed from the attachment member 115, and then the second grinding member 232 is attached to the attachment member 115. Subsequently, the second grinding member 232
Is attached to the attachment member 115, the grinding surface 232a of the second grinding member 232 is brought into contact with the polishing surface 105a to grind the polishing surface 105a. However, the grinding may be performed using the second grinding member 232 first, and then using the first grinding member 231.

The time for the first grinding member 231 and the second grinding member 232 to grind the polished surface 105a can be arbitrarily set by each user.

In the third embodiment, grinding members having different arrangement densities may be used as in the first or second embodiment.

Therefore, in the pad dressing method of the third embodiment, the same effect as in the case of pad dressing using the above-described CMP apparatus of the first or second embodiment can be obtained.

[0086]

As is clear from the above description, according to the CMP apparatus of the present invention, a plurality of grinding members each having a different grinding surface are used, and the polishing pad is formed by the plurality of polishing members. Dressing. Therefore, for example, parameters such as the arrangement density of the grinding particles on the grinding surface of each grinding member, the arrangement pattern of the grinding particles on the grinding surface, the arrangement position of the grinding member on the polishing pad, or the size of the grinding surface are adjusted. By doing so, it is possible to reduce the variation in the amount of grinding within the polishing surface of the polishing pad as compared with the conventional configuration in which dressing is performed with one polishing member, and therefore, the global flatness of the polishing surface The polishing pad can be dressed without damaging the polishing pad. Therefore, when the dressing is performed, the polished surface can be regenerated so that stable polishing can be performed.

Further, according to the pad dressing method of the present invention, the polishing pad is dressed with the plurality of grinding members while replacing the plurality of grinding members having different grinding surfaces. Therefore, for example, parameters such as the arrangement density of the grinding particles on the grinding surface of each grinding member, the arrangement pattern of the grinding particles on the grinding surface, the arrangement position of the grinding member on the polishing pad, or the size of the grinding surface are adjusted. By doing so, variation in the amount of grinding in the polishing surface of the polishing pad can be less likely to occur than in the conventional configuration in which dressing is performed with one polishing member, and therefore, the global flatness of the polishing surface can be reduced. The polishing pad can be dressed without damage. Therefore, when the dressing is performed, the polished surface can be regenerated so that stable polishing can be performed.

[Brief description of the drawings]

FIG. 1 is a diagram schematically illustrating a main configuration of a CMP apparatus according to a first embodiment.

FIG. 2 is a diagram for explaining the overall configuration of the CMP apparatus according to the first embodiment;

FIG. 3 is a diagram for describing a grinding member according to the first embodiment;

FIG. 4 is a diagram showing a grinding amount G ( _RT ) when a first grinding member and a second grinding member are used in the CMP apparatus of the first embodiment under the setting conditions of the embodiment.

FIG. 5 is a diagram showing a grinding amount F ( _RT ) when only a first grinding member is used in a conventional CMP apparatus under the setting conditions of the embodiment.

FIG. 6 is a diagram for explaining a grinding member according to a second embodiment.

FIG. 7 is a view schematically showing a conventional CMP apparatus.

[Explanation of symbols]

 11: CMP apparatus 11a: Polishing system 11b: Dressing system 11c: Polishing solvent supply unit 13: Surface plate 15: Polishing pad 15a: Polishing surface 17: Polished member 17a: Polished surface 19: Holding member 21: Polishing system drive Part 231, 291: First grinding member 232, 292: Second grinding member 231a, 291a: First grinding surface 232a, 292a: Second grinding surface 251, 252: Mounting member 271, 272: Dressing system drive unit

Claims (8)

[Claims] 1. A chemical mechanical polishing apparatus comprising: a polishing pad provided on a rotating surface plate; and a dressing system for grinding a polishing surface of the polishing pad, wherein the dressing systems are different from each other. A plurality of grinding members each having a grinding surface and grinding particles arranged on the grinding surface, and a plurality of mounting the respective grinding members such that each grinding surface of the plurality of grinding members faces the polishing surface. A chemical mechanical polishing apparatus, comprising: a mounting member according to (1), and a plurality of driving units configured to rotate the plurality of mounting members, wherein the polishing pad is dressed by the plurality of polishing members. 2. The chemical mechanical polishing apparatus according to claim 1, wherein the plurality of grinding members have the first grinding member and the second grinding member on which the grinding particles are arranged so that the arrangement patterns are different from each other. Wherein the arrangement pattern of the grinding particles on the grinding surface of the first grinding member is a circular ring shape, and the arrangement pattern of the grinding particles on the grinding surface of the second grinding member is a disk shape. Chemical mechanical polishing equipment. 3. The chemical mechanical polishing apparatus according to claim 1, wherein a plurality of the grinding members have different arrangement densities of grinding particles from one another. apparatus. 4. The chemical mechanical polishing apparatus according to claim 1, wherein an arrangement density of grinding particles is the same among the plurality of grinding members, and an arrangement pattern in at least one grinding member. Wherein the apparent arrangement density of the grinding particles during rotation is varied by molding. 5. A method for dressing a polishing pad of a chemical mechanical polishing apparatus, comprising: a polishing pad provided on a rotating platen; and a dressing system for grinding a polishing surface of the polishing pad. The dressing system includes a mounting member for mounting the grinding member such that a grinding surface of the grinding member faces the polishing surface, and a driving unit that rotates the mounting member, and the dressing system is different from the grinding member. Prepare a plurality of grinding members having a grinding surface and grinding particles are arranged on the grinding surface, by replacing these plurality of grinding members to the mounting member, sequentially for each replaced grinding member A pad dressing method comprising dressing a polishing pad. 6. The pad dressing method according to claim 5, wherein the plurality of grinding members are first and second grinding members, and the first and second grinding members have respective arrangements on respective grinding surfaces. The grinding particles are arranged so that the patterns are different from each other, and the arrangement pattern of the grinding particles on the grinding surface of the first grinding member is formed in a circular ring shape, and the arrangement of the grinding particles on the grinding surface of the second grinding member is performed. A pad dressing method characterized in that a pattern is formed in a disk shape. 7. The pad dressing method according to claim 5, wherein arrangement densities of grinding particles are different from each other among the plurality of grinding members. 8. The pad dressing method according to claim 5, wherein an arrangement density of grinding particles is the same among the plurality of grinding members, and an arrangement pattern of at least one grinding member is formed. A pad dressing method, wherein the apparent arrangement density of the grinding particles during rotation is varied.