JP2001250473A - Manufacturing device and method for electron source - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron source manufacturing device capable of lowering the partial pressure of the residual water at a high speed to remove the influence of the residual water and to reduce the manufacturing cost. SOLUTION: Light is irradiated on an evacuated vacuum after the forming process for the electron source, or ionized gas is led and irradiated after completion of evacuation to vacuum to some extent. Then, the water adsorbed on the vacuum box 103 and the electron source substrate 101 is excited and its dewatering speed is raised further. As a result, the partial pressure of the water in the vacuum box 103 can be reduced sufficiently at a high speed, so that the necessary time for the transfer to the activation process can be shortened, and the influence of the residual water can be removed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for manufacturing an electron source having an electron-emitting device applied to an image display device or the like.

[0002]

2. Description of the Related Art Generally, two types of electron-emitting devices are known: a thermionic electron-emitting device and a cold cathode electron-emitting device. The cold-cathode electron-emitting devices include a field emission type, a metal / insulating layer / metal type, and a surface conduction type.

[0003] The surface conduction electron-emitting device utilizes the phenomenon that electron emission occurs when a current flows in a small-area thin film formed on an insulating substrate in parallel with the film surface. The present applicant has disclosed a surface conduction electron-emitting device having a novel structure and its application, for example, in Japanese Patent Application Laid-Open No. 7-235.
A number of proposals have been made, such as those disclosed in US Pat.

In a surface conduction electron-emitting device having a conductive thin film and a pair of device electrodes electrically connected to the conductive thin film, an electron-emitting portion is formed in the conductive thin film by an energization process called forming. . In the forming step, a voltage is applied to the conductive thin film and a current is applied to the conductive thin film to locally break, deform, or alter the structure, thereby changing the structure and forming an electron emission portion in an electrically high-resistance state. .

Further, the present applicant has proposed an activation step for depositing a deposit containing carbon as a main component on the electron-emitting portion formed by the above-described forming step. The current flowing through the conductive thin film (device current) and the current released into vacuum (emission current) by this activation process
Can be significantly changed to increase the emission current.

[0006]

In the above-mentioned activation step, as will be described in detail later, if moisture remains in the vacuum chamber, the final element current value reached in the activation step (the activation element current Value).

[0007] In the activation step, the inside of the vacuum vessel is made high vacuum.
After evacuating to 10 ^-FiveFrom 10^-2Pa degree
This is done by introducing a voltage with a low partial pressure
You. Therefore, avoid the effects of residual moisture in the vacuum vessel
Before introducing organic substances, reduce the water pressure in the vacuum
Need to be reduced to a minute.

[0008] However, waiting for the water pressure in the vacuum vessel to drop naturally naturally increases the overall time due to the waiting time, which is one of the factors that increase the production cost.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an electron source manufacturing apparatus and method capable of reducing the residual moisture pressure at a high speed, suppressing the production cost and manufacturing an inexpensive electron source. I do.

[0010]

According to the present invention, there is provided an apparatus for manufacturing an electron source, comprising: support means for fixing a substrate of an electron source having an electron-emitting device; a container for covering the electron-emitting device of the electron source; Gas introducing means for introducing gas into the vessel, exhaust means for exhausting the inside of the container, voltage applying means for applying a voltage to the electron source, and irradiation means for irradiating light or ions into the container. It is characterized by points.

Another feature of the apparatus for manufacturing an electron source according to the present invention is that the electron-emitting device is a surface conduction electron-emitting device having an electron-emitting portion.

Another feature of the apparatus for manufacturing an electron source of the present invention is that the gas introduced into the container by the gas introducing means is an organic substance gas.

Another feature of the apparatus for manufacturing an electron source according to the present invention resides in that the irradiation means irradiates ultraviolet rays.

Another feature of the apparatus for manufacturing an electron source according to the present invention is that the irradiation means irradiates infrared rays.

Another feature of the apparatus for manufacturing an electron source of the present invention is that the irradiating means comprises an electrode disposed in the container and an ionized gas inlet provided in the container. It is in.

Another feature of the apparatus for manufacturing an electron source of the present invention is that there are a plurality of the above-mentioned electrodes, and different voltages are applied to the plurality of electrodes.

Another feature of the apparatus for manufacturing an electron source of the present invention is that the ions used by the irradiation means are He.

Another feature of the apparatus for manufacturing an electron source of the present invention resides in that a water pressure measuring means for measuring the water pressure in the container is provided.

According to the method of manufacturing an electron source of the present invention, an exhausting step of exhausting the inside of the container with the electron-emitting device of the electron source covered by a container, and an irradiation step of irradiating light or ions in the container This is characterized by having the following.

Another feature of the method for manufacturing an electron source according to the present invention is that an activation step is performed after the evacuation procedure and the irradiation procedure.

According to another feature of the method for manufacturing an electron source of the present invention, in the activation step, a gas is introduced into the container and a voltage is applied to the electron-emitting device of the electron source. That is the process.

Another feature of the method for manufacturing an electron source according to the present invention is that the activation step is performed after the water pressure in the container has fallen below a predetermined value by the irradiation procedure. .

Another feature of the method for manufacturing an electron source according to the present invention is that a forming step is performed before the above-described evacuation procedure and irradiation procedure.

Another feature of the method for manufacturing an electron source according to the present invention is that the forming step is an energizing process for forming an electron emission portion in the electron emission element.

In the present invention as described above, by performing light irradiation or ion irradiation, water adsorbed on the container and the electron source can be excited, and the dehydration rate can be increased.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of an apparatus and a method for manufacturing an electron source according to the present invention will be described with reference to the drawings.

1 to 3 show an apparatus for manufacturing an electron source according to the present embodiment. Hereinafter, an apparatus for manufacturing an electron source will be described. Before that, an electron source having a surface conduction electron-emitting device will be described with reference to FIGS.

As shown in FIG. 4, a plurality of surface conduction electron-emitting devices 400 are arranged, and wirings 40 for supplying electric signals to the surface conduction electron-emitting devices 400 are arranged.
1, 402, 404 and an interlayer insulating film 403.

As an example of the wiring, two wirings which are orthogonal to each other (upper wiring 402 and lower wiring 401: these are referred to as simple matrix wirings) can be used, and element electrodes 506 of the surface conduction electron-emitting device 400 which will be described later. Is the upper wiring 4
02 and a wiring pad 404, and are directly electrically connected to the lower wiring 401. Upper wiring 402 and lower wiring 401
At the intersection with the interlayer insulating film 40 for electrical insulation
3 are arranged. For example, assuming that the upper wiring 402 side is a row direction and the lower wiring 401 side is a column direction, a wiring extraction unit at an end of the upper wiring 402 is electrically connected to a scanning drive unit (not shown) for scanning a row in accordance with an input signal. And a wiring take-out portion at the end of the lower wiring 401 is electrically connected to a modulation driving unit (not shown) for performing modulation in accordance with an input signal.

The upper wiring 402, the lower wiring 401, and the wiring pad 404 are formed by a printing method such as screen printing or offset printing. The conductive paste used is A
It contains a metal such as g, Au, Pt, Pb, Cu, Ni or a combination thereof singly or arbitrarily, and is formed by printing a wiring pattern with a printing machine and then firing it at a temperature of 400 ° C. or more. Similarly, the interlayer insulating film 403 is formed by printing and baking a glass paste.

As shown in FIG. 5, the surface conduction type electron-emitting device 400 includes a conductive thin film 5 including an electron-emitting portion 508.
07, and an element electrode 506 connected to the conductive thin film 507 and arranged so as to face each other.

As the device electrode 506, Ni, Cr, A
metals or alloys such as u, Mo, W, Pt, Ti, Al, Cu, Pd or Pd, Ag, Au, RuO ₂ , Pd-Ag
Any material such as a printed conductor made of a metal or metal oxide such as a metal oxide and glass, a transparent conductor such as In ₂ O ₃ —SnO ₂ , and a semiconductor material such as polysilicon is appropriately selected.

As the conductive thin film 507, Pd, P
t, Ru, Ag, Au, Ti, In, Cu, Cr, F
e, metal such as Zn, Sn, Ta, W, Pb, PdO, S
Oxide conductor such as nO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , G
borides such as dB ₄ , TiC, ZrC, HfC, TaC,
Any material such as carbide such as SiC and WC, nitride such as TiN, ZrN, and HfN, semiconductor such as Si and Ge, and carbon is appropriately selected.

The electrode interval L and electrode length W of the device electrode 506, the shape of the conductive thin film 507, and the like are designed in consideration of the form to be applied.

The electrode interval L of the device electrode 506 can be preferably in the range of several hundred nm to several hundred μm, and more preferably in the range of several μm to several tens μm.
The electrode length W of the device electrode 506 can be in the range of several μm to several hundred μm in consideration of the resistance value of the electrode and the electron emission characteristics. The film thickness of the device electrode 506 can be in the range of several tens nm to several μm.

The thickness of the conductive thin film 507 is
6 and the resistance between the device electrodes 506, etc., and the above-described forming conditions are appropriately determined, but it is usually preferable that the range is several times 0.1 nm to several hundred nm. More preferably, it is in the range of 1 nm to 50 nm. The resistance value of Rs is 10 ² to 1
It is preferably a value of 0 ⁷ Ω / □. Rs is the resistance R of a thin film having a thickness t, a width w, and a length l, R = Rs
(L / w).

The device electrode 506 and the conductive thin film 507 are
A film forming technique such as a coating and firing method, a vacuum evaporation method, a sputtering method, a chemical vapor deposition method, and a patterning technique such as photolithography, and a method of processing into a desired shape by a processing technique such as etching and lift-off, and a printing method. Can also be produced. In short, the device electrode 50 has a desired shape.
6. Any method can be used as long as the conductive thin film 507 can be formed.

The electron emitting portion 508 is formed by the above-described forming step and activation step.

The surface conduction electron-emitting device 400 manufactured as described above has the following three features, and has characteristics optimal for use in an image display device. That is, first, in the present element 400, the emission current increases sharply when the applied element voltage becomes higher than a certain voltage (threshold voltage), but the emission current is hardly detected below the threshold voltage. That is, it is a non-linear element having a clear threshold voltage with respect to the emission current, which enables simple matrix driving. Second, the emission current is monotonically increasing with the device voltage, and the emission current can be controlled by the device voltage. Third, the amount of charge captured by the anode electrode depends on the time for applying the device voltage, and the amount of charge captured on the anode electrode can be controlled by the time for applying the device voltage.

The structure of the surface conduction electron-emitting device 400 has been described above. However, the structure is not limited to the structure shown in FIG. 5, and the conductive thin film 507 and the conductive thin film 507 are formed on the rear plate 302, contrary to the structure shown in FIG. The device electrodes 506 may be formed in this order. In other words, any structure may be used as long as the element electrode 506 and the conductive thin film 507 are electrically connected, and the electron emission portion 508 is formed in a part of the conductive thin film 507.

Next, an apparatus for manufacturing an electron source according to the present embodiment will be described. In FIG. 1, reference numeral 102 denotes a support for supporting and fixing the electron source substrate 101 on which the above-described electron source is disposed. It is. Specifically, the support 102 has a mechanism that is mechanically fixed by an electrostatic chucking mechanism or a fixing jig. Further, a heater (not shown) is provided inside the support 102, and the electron source substrate 101 can be heated as needed. In the present embodiment, the support 102 constitutes the support means in the present invention.

Reference numeral 103 denotes a vacuum vessel, which covers a region including the electron-emitting portion of the above-mentioned electron source except for a wiring take-out portion. The vacuum vessel 103 is made of glass or stainless steel,
Preferably, a gas that releases a small amount of gas is good. Although not specifically shown, a sealing member such as an O-ring is disposed at a joint portion between the vacuum vessel 103 and the electron source substrate 101 so as to maintain the airtightness in the vacuum vessel 103. In the present embodiment, this vacuum container 103 constitutes the container referred to in the present invention.

Reference numeral 104 denotes an inlet provided in the vacuum vessel 103, which is provided between the organic substance gas source 107, the mass flow controller 109 for controlling the supply amount of the organic substance gas, and the gas pipe and the inlet 104. The stop valve 111 is connected. When performing the activation step, the organic substance gas supplied from the organic substance gas source 107 is introduced into the vacuum vessel 103 while being controlled to a desired flow rate by the mass flow controller 109. In the present embodiment,
The inlet 104, the organic substance gas source 107, the mass flow controller 109, and the stop valve 111 constitute a gas introducing means according to the present invention.

Reference numeral 108 denotes an exhaust port provided in the vacuum vessel 103, which is a vacuum exhaust device 11 comprising a scroll pump, a turbo molecular pump, a roughing valve and an auxiliary valve.
9. A conductance valve 118 for adjusting the amount of exhaust gas installed between the vacuum exhaust device 119 and the exhaust port 108 is connected. Thus, the vacuum chamber 103 can be evacuated and the pressure in the vacuum chamber 103 can be controlled to a desired value. In the present embodiment, these exhaust ports 10
8. Vacuum exhaust device 119, conductance valve 118
Together constitute the exhaust means referred to in the present invention.

Reference numeral 116 denotes an external drive circuit, which is connected to the wiring extraction portion of the electron source via a wiring 115 and applies a voltage to the wiring extraction portion. In the present embodiment,
The external driving circuit 116 and the wiring 115 together constitute a voltage applying means according to the present invention.

Reference numeral 117 denotes a light irradiation source or ion irradiation source 117 installed in the vacuum vessel 103.
Controlled by 0. In the present embodiment, the light irradiation source or the ion irradiation source 117 and the control device 110 constitute an irradiation unit according to the present invention.

In the apparatus for manufacturing an electron source having such a configuration, ion irradiation is performed by irradiating light during vacuum evacuation after completion of the forming step, or by introducing an ionized gas after evacuation to some extent. By doing
The water adsorbed on the vacuum vessel 103 and the electron source substrate 101 can be excited to increase the dehydration rate. Therefore, the water pressure in the vacuum vessel 103 can be sufficiently reduced at a high speed, and the time required for shifting to the activation step can be reduced, and the influence of residual water can be eliminated.

Hereinafter, an experimental example using the apparatus for manufacturing an electron source according to the present embodiment will be described. In this experiment, 240 mm × 320 mm soda glass was used as the electron source substrate.
Explaining with reference to FIGS. 4 and 5, Pt is formed on soda glass by RF sputtering, a resist is applied, the resist is arranged at a desired position by photolithography, and reactive ion etching is performed. The element electrode 506 was formed by removing the Pt portion where the resist was not disposed. Here, the device electrode 50
The shape of No. 6 had a film thickness of 70 nm, an electrode interval L = 10 μm, and an electrode length W = 300 μm.

Next, an organic palladium solution is applied,
A heat treatment at 0 ° C. for 10 minutes is performed, and a 200 μm × 10
A conductive thin film 507 was formed by forming a fine particle film mainly containing 0 μm palladium. The conductive thin films 507 were arranged at an interval of 1.2 mm along the upper wiring 402 and at an interval of 1.5 mm along the lower wiring 401.

Next, the 210 lower wirings 401 and the wiring pads 404 are formed so as to have a width of 300 μm and a thickness of 8 μm.
The g paste was printed and baked to form desired positions. Thereafter, an interlayer insulating film 403 was formed by printing and firing glass paste at a cross section of the lower wiring 401 and the upper wiring 402 with a thickness of 20 μm and a size of 500 μm × 700 μm. Next, 12
The zero upper wiring 402 was formed at a desired position by printing and baking an Ag paste so as to have a width of 500 μm and a thickness of 10 μm.

The electron source substrate 10 manufactured as described above
First, the influence of the water pressure on the activation step was examined by using No. 1. At this time, the temperature of the electron source substrate 101 was set to room temperature.

In the manufacturing apparatus shown in FIG. 1, the above-mentioned electron source substrate 101 which has been subjected to the forming process is arranged, and the water pressure is reduced.
Evacuation was performed until the pressure became 1e-6Pa. Thereafter, trinitrile was used as an organic substance gas to introduce water so as to have a water pressure of 1 e-4 Pa, and water was further introduced until the water pressure became 1 e-5 to 1 e-2 Pa to perform an activation treatment.

Here, the activation process is performed by changing the voltage of 16 V to 1 m
The test was performed by applying a pulse width of s at 100 Hz for 1 hour. FIG. 6 shows a result of a change in the activation reaching element current value per element with respect to the water pressure at this time. From this result, it can be seen that the activation-reached element current value decreases as the water pressure increases. Although the trinitrile partial pressure and the water pressure are not specifically shown, the vacuum vessel 103
Calculated by installing a mass analyzer and a pressure gauge in

As described above, when the activation attainment current value decreases, the element current and the emission current decrease, which may cause a decrease in luminance when used as an image display device. Therefore, it is necessary to sufficiently reduce the water pressure in the vacuum vessel 103.

Next, the electron source substrate 101 manufactured as described above was placed in the manufacturing apparatus shown in FIG. 1 and evacuated, and the change in water pressure at that time was measured. The measurement is performed at room temperature, and 10
A control power supply was used as the control device 110 with a 00 W halogen lamp.

FIG. 7 shows the results of changes in water pressure when the halogen lamp is turned on for only 4 minutes after the start of evacuation and vacuum evacuation is performed, and when the halogen lamp is evacuated without turning on the halogen lamp. From this result, for example, in order to reduce the water pressure to 1e-4 Pa or less, it reaches 9 minutes after the start of evacuation when the halogen lamp is turned on, but 45 minutes from the start of evacuation when the halogen lamp is not turned on. Minutes, it can be seen that the lighting of the halogen lamp can greatly reduce the water pressure evacuation time.

Incidentally, as shown in FIG.
A plurality of light irradiation sources 117 may be arranged (see FIG. 2).
(a)), a point light source, a line light source, and a surface light source. As an example of the ion irradiation source 117, an ionized gas is supplied into the vacuum
What is necessary is just to ionize and ionize by the electrode installed in 3. Then, as shown in FIG.
The electrode plate in 3 may be provided with an electrode plate and a power source so as to apply an electric field between the electrode plate and the vacuum vessel 103 and / or the electron source to ionize the gas (see FIG. 3A). May be arranged so that an electric field is applied between these electrode plates to ionize the gas (see FIGS. 3B and 3C).

The organic substance gas introduced into the vacuum chamber 103 in the activation step is an organic substance used for activating the electron-emitting device, or a gas obtained by diluting the organic substance with nitrogen, helium, argon or the like. Is used.

Here, the organic substance used for activating the electron-emitting device includes alkanes, alkenes, aliphatic hydrocarbons of alkynes, aromatic hydrocarbons, alcohols, and the like.
Examples thereof include organic acids such as aldehydes, ketones, amines, nitriles, phenol, carboxylic acid, and sulfonic acid, and more specifically, represented by C _n H _{2n + 2} such as methane, ethane, and propane. Saturated hydrocarbons, ethylene,
Unsaturated hydrocarbons represented by a composition formula such as C _n H _2n such as propylene, benzene, toluene, methanol, ethanol, acetaldehyde, acetone, methyl ethyl ketone, ethylamine, phenol, benzonitrile, acetonitrile and the like can be used. Here, when the organic substance is a gas, the organic substance gas can be used as it is. When the organic substance is a liquid or a solid, there is a method of mixing and supplying the evaporated or sublimated organic substance with a diluent gas.

[0060]

EXAMPLES (First Example) In the first example, the same electron source substrate 101 as that used in the experiment described in the above embodiment was used. Further, two 450 W low-pressure mercury lamps 117 are arranged in the vacuum vessel 103 as shown in FIG. In addition, other device configurations are as follows:
This is the same as described in the above embodiment.

The electron source substrate 101 was fixed on a support 102, and a stainless steel vacuum vessel 103 was placed on the electron source substrate 101 with a silicone rubber sealing member. The temperature of the electron source substrate 101 was set to room temperature.

Next, the inside of the vacuum vessel 103 is evacuated by the vacuum exhaust device 119 so that the pressure in the vacuum vessel 103 becomes 1P.
a, the external drive circuit 116 controls the wiring 1
15, a desired voltage was applied to the lower wiring 401 and the upper wiring 402. Further, the valve 118 is closed, and H2 / N2 (2% H2 / 9) is supplied from a forming gas introduction system (not shown).
8% N2) gas is introduced so that the inside of the vacuum vessel 103 becomes 100 Pa, and a forming process is performed.
An electron emitting portion 508 was formed on the substrate.

After the forming step, the valve 118 was opened and the inside of the vacuum vessel 103 was evacuated. At this time, the low-pressure mercury lamp 117 is turned on simultaneously with the start of evacuation,
The light went out after a minute. Thereafter, the water pressure in the vacuum vessel 103 was measured by a mass analyzer and a pressure gauge (not shown) installed in the vacuum vessel 103, and when the water pressure became 1e-4 Pa or less, the stop valve 111 was opened, A substance gas was introduced into the vacuum vessel 103. Trinitrile is used as the organic substance gas, and the partial pressure of trinitrile is 1e-4.
The flow rate was controlled by the mass flow controller 109 so as to be Pa. Here, the water pressure before the introduction of trinitrile is 8.
It was 0e-5Pa.

Next, a voltage was applied to the electron-emitting portion 508 using the external drive circuit 116 to perform an activation step. The voltage is obtained by connecting 210 lower wires 401 to GND via an ammeter (not shown), dividing 120 upper wires 402 into 10 blocks, and connecting 12 upper wires 402 in each block in parallel. An activation process was sequentially performed for each block. At this time, for each block of the upper wiring 402,
A rectangular wave having a voltage of 16 V, a pulse width of 1 msec, and a frequency of 100 Hz was scanned and applied. This activation step was for 60 minutes.

As a result of measuring the device current of each surface conduction electron-emitting device 400 at the end of the activation step using an ammeter (not shown), the average value of the device current was 1.20 mA and the standard deviation was 0.11 mA. Was. The time from the forming step to the start of the activation step was 15 minutes.

For comparison, the activation step was performed without turning on the low-pressure mercury lamp, and the time after the forming step was set to 15 minutes. Here, the water pressure before the introduction of trinitrile was 1.8e-4Pa. As a result of measuring the device current of each surface conduction electron-emitting device 400 at the end of the activation step, the average value of the device current was 0.82 mA and the standard deviation was 0.28 mA.

From the above results, it was found that the activation method can be performed in a short evacuation time without affecting the element characteristics by the present method.

(Second Embodiment) In the second embodiment, the same electron source substrate 101 as that used in the experiment described in the above embodiment was used. As shown in FIG. 3A, a high-frequency power supply 110 for applying a high-frequency voltage is provided between the electrode plate 117 and the vacuum vessel 103 and the electron source substrate 101 in the vacuum vessel 103, as shown in FIG. . The other device configuration is the same as that described in the above embodiment.

The electron source substrate 101 was fixed on a support 102, and a stainless steel vacuum vessel 103 was placed on the electron source substrate 101 with a silicone rubber sealing member. The temperature of the electron source substrate 101 was set to room temperature.

Next, the inside of the vacuum vessel 103 is evacuated by the vacuum evacuation apparatus 119 so that the pressure inside the vacuum vessel 103 becomes 1P.
a, the wiring 11
5, a desired voltage was applied to the lower wiring 401 and the upper wiring 402. Further, the valve 118 is closed, and H2 / N2 (2% H2 / 98) is supplied from a forming gas introduction system (not shown).
% N 2) gas was introduced so that the inside of the vacuum vessel 103 became 100 Pa, and a forming process was performed to form an electron emission portion 508 on the conductive thin film 507.

After the forming step is completed, the valve 118 is opened to evacuate the inside of the vacuum vessel 103, and after reaching 1 Pa, He gas is introduced and the pressure inside the vacuum vessel 103 is reduced to 10 Pa.
Electrode plate, vacuum vessel 103 and electron source substrate 101
Between them, a high frequency voltage of 300 V and 1 kHz was applied for 5 minutes to evacuate.

After evacuating for 5 minutes, the stop valve 1
11 was opened, and an organic substance gas was introduced into the vacuum vessel 103. Trinitrile was used as the organic substance gas, and the flow rate was controlled by the mass flow controller 109 so that the partial pressure of trinitrile was 1e-4 Pa. Here, it took 12 minutes in total from the end of the forming step to the introduction of the organic substance gas for activation. The water pressure in the vacuum vessel 103 measured by a mass spectrometer (not shown) and a pressure gauge installed in the vacuum vessel 103 is measured before the introduction of trinitrile.
9.5e-5Pa.

Next, a voltage was applied to the electron emission section 508 using the external drive circuit 116 to perform an activation step. The voltage is obtained by connecting 210 lower wires 401 to GND via an ammeter (not shown), dividing 120 upper wires 402 into 10 blocks, and connecting 12 upper wires 402 in each block in parallel. An activation process was sequentially performed for each block. At this time, for each block of the upper wiring 402,
A rectangular wave having a voltage of 16 V, a pulse width of 1 msec, and a frequency of 100 Hz was scanned and applied. This activation step was for 60 minutes.

As a result of measuring the device current of each surface conduction electron-emitting device 400 at the end of the activation step using an ammeter (not shown), the average value of the device current was 1.14 mA and the standard deviation was 0.10 mA. Was. The time from the forming step to the start of the activation step was 15 minutes.

The results were inferior to those of the first embodiment, and it was found that the activation process could be performed in a short evacuation time without affecting the device characteristics.

(Third Embodiment) In the third embodiment, ion irradiation using He is performed in the same manner as in the second embodiment. However, as shown in FIG. Four electrode plates 117 are arranged in the container 103, the electrode plates are alternately connected by the low-voltage power supply 110, and an electric field is applied between the electrode plates 117.

After completion of the forming step, He is removed.
100Pa was introduced. Thereafter, a voltage of 500 V is applied between the electrodes 117 for 5 minutes to evacuate, and trinitrile is eluted with 1e-4.
Activation treatment was performed by introducing Pa. Here, the vacuum vessel 103
The internal water pressure was 7.6e-5Pa before the introduction of trinitrile.

As a result of measuring the device current of each surface conduction electron-emitting device 400 at the end of the activation step using an ammeter (not shown), the average value of the device current was 1.22 mA and the standard deviation was 0.11 mA. Was. The time from the forming step to the start of the activation step was 15 minutes.

[0079]

As described above, according to the present invention, the residual water pressure can be reduced at a high speed, the influence of residual water is eliminated, and the production cost is reduced to produce an inexpensive electron source. be able to.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of an apparatus for manufacturing an electron source.

FIG. 2 is a diagram illustrating an example of installation of a light source.

FIG. 3 is a diagram showing an example of installation of an ion irradiation source.

FIG. 4 is a diagram showing a structure of an electron source.

FIG. 5 is a view showing a structure of a surface conduction electron-emitting device.
(a) is a plan view and (b) is a sectional view.

FIG. 6 is a correlation diagram showing a change in an activation reaching element current value with respect to a change in water pressure.

FIG. 7 is a correlation diagram showing a change in water pressure with respect to an evacuation time.

[Explanation of symbols]

 101 Electron Source Substrate 102 Support 103 Vacuum Vessel 104 Inlet 107 Organic Gas Source 108 Exhaust 109 Mass Flow Controller 110 Controller 111 Stop Valve 115 Wiring 116 External Drive Circuit 117 Light Irradiation Source or Ion Irradiation Source 118 Conductance Valve 119 Vacuum Evacuation Device 400 Surface conduction electron-emitting device 401 Lower wiring 402 Upper wiring 403 Interlayer insulating film 404 Wiring pad 506 Device electrode 507 Conductive thin film 508 Electron emitting portion

Claims (15)

[Claims] 1. A supporting means for fixing a substrate of an electron source having an electron emitting element, a container for covering the electron emitting element of the electron source, a gas introducing means for introducing a gas into the container, An apparatus for manufacturing an electron source, comprising: an exhaust unit for exhausting gas; and a voltage application unit for applying a voltage to the electron source, and an irradiation unit for irradiating the container with light or ions. 2. The apparatus according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device having an electron-emitting portion. 3. The apparatus according to claim 1, wherein the gas introduced into the container by the gas introducing means is an organic substance gas. 4. The apparatus for manufacturing an electron source according to claim 1, wherein said irradiation means irradiates ultraviolet rays. 5. The apparatus according to claim 1, wherein the irradiating unit irradiates infrared rays. 6. The method according to claim 1, wherein the irradiating means comprises an electrode disposed in the container and an ionized gas inlet provided in the container. Equipment for manufacturing electron sources. 7. The apparatus according to claim 6, wherein a plurality of the electrodes are provided, and different voltages are applied to the plurality of electrodes. 8. The apparatus according to claim 1, wherein ions used by said irradiation means are He. 9. The apparatus for manufacturing an electron source according to claim 1, further comprising a water pressure measuring means for measuring a water pressure in the container. 10. An exhausting step of exhausting the inside of the container while covering the electron-emitting device of the electron source with the container, and an irradiation step of irradiating the container with light or ions. Manufacturing method of electron source. 11. The method according to claim 1, further comprising a step of performing an activation step after the evacuation step and the irradiation step.
0. The method for manufacturing an electron source according to item 0. 12. The electron source according to claim 11, wherein the activation step is a step of introducing a gas into the container and applying a voltage to the electron-emitting device of the electron source. Production method. 13. The method for manufacturing an electron source according to claim 11, wherein the activation step is performed after the water pressure in the container has become equal to or lower than a predetermined value by the irradiation procedure. 14. The method according to claim 10, further comprising a step of performing a forming step before the evacuation step and the irradiation step. 15. The method for manufacturing an electron source according to claim 14, wherein the forming step is an energization process for forming an electron emitting portion in the electron emitting element.