JP2001244200A - Method of determining maintenance time for semiconductor manufacturing apparatus - Google Patents
Method of determining maintenance time for semiconductor manufacturing apparatusInfo
- Publication number
- JP2001244200A JP2001244200A JP2000052555A JP2000052555A JP2001244200A JP 2001244200 A JP2001244200 A JP 2001244200A JP 2000052555 A JP2000052555 A JP 2000052555A JP 2000052555 A JP2000052555 A JP 2000052555A JP 2001244200 A JP2001244200 A JP 2001244200A
- Authority
- JP
- Japan
- Prior art keywords
- maintenance time
- semiconductor manufacturing
- reaction chamber
- manufacturing apparatus
- maintenance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば反応室内に
配置したシリコン基板上に腐食性ガスを用いてエピタキ
シャル成長等を行う半導体製造装置のメンテナンス時期
判断方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for determining a maintenance time of a semiconductor manufacturing apparatus for performing epitaxial growth or the like using a corrosive gas on a silicon substrate placed in a reaction chamber, for example.
【０００２】[0002]
【従来の技術】近年、ＭＯＳデバイス用のシリコン・ウ
ェーハとして、極めて低い抵抗率のシリコン基板上に、
所定の不純物濃度で単結晶シリコン薄膜（エピタキシャ
ル層）を気相成長させたエピタキシャル・ウェーハが、
エピタキシャル結晶成長装置で製造されている。この装
置は、チャンバ内にシリコン基板を配置して腐食性のソ
ースガスを流し、基板上にエピタキシャル成長を行うも
のである。なお、この装置では、チャンバ内部に付着し
たポリシリコンを腐食性ガスである塩化水素によってエ
ッチングすることも行われる。また、ＬＳＩ等の半導体
製造工程では、腐食性ガスを用いて基板上に薄膜を形成
する種々のＣＶＤ装置あるいはパターニングのためのエ
ッチング装置が用いられている。2. Description of the Related Art In recent years, as a silicon wafer for MOS devices, a silicon substrate having an extremely low resistivity has been used.
An epitaxial wafer in which a single crystal silicon thin film (epitaxial layer) is vapor-phase grown at a predetermined impurity concentration,
Manufactured with an epitaxial crystal growth apparatus. In this apparatus, a silicon substrate is placed in a chamber, a corrosive source gas is flowed, and epitaxial growth is performed on the substrate. In this apparatus, the polysilicon adhered to the inside of the chamber is also etched by hydrogen chloride which is a corrosive gas. In the process of manufacturing a semiconductor such as an LSI, various CVD apparatuses for forming a thin film on a substrate using a corrosive gas or an etching apparatus for patterning are used.
【０００３】これらの半導体製造装置は、超高純度の塩
化水素ガスやアンモニアガスのような腐食性ガスを用い
るが、その中に僅かでも水分が含まれていると、装置
（プロセスチャンバ内部、ガス供給系、ガス排気系等）
に使用されている金属部品の腐食を起こしやすくなり、
金属部分から生じるメタル（重金属）によって汚染の原
因となり有害である。また、チャンバ内に取り込まれた
水分は、チャンバ内壁や排気ラインに付着している副生
成物と反応してパーティクルの原因となる場合もある。
このため、プロセスチャンバ内の水分を低減する種々の
対策が採られているが、水分を皆無にすることは困難で
あり、装置のメンテナンス、すなわちプロセスチャンバ
の解放、内部の部材（石英治具等）の洗浄等を定期的に
行う必要がある。従来、例えば、枚葉式ＣＶＤ装置の場
合、メンテナンスの時期は、ウェーハの積算処理枚数を
基準に判断していた。[0003] These semiconductor manufacturing apparatuses use corrosive gases such as ultra-high purity hydrogen chloride gas and ammonia gas. Supply system, gas exhaust system, etc.)
Corrosion of metal parts used in
The metal (heavy metal) generated from the metal part causes contamination and is harmful. Further, the moisture taken into the chamber may react with by-products adhering to the inner wall of the chamber or the exhaust line to cause particles.
For this reason, various measures have been taken to reduce the moisture in the process chamber. However, it is difficult to eliminate the moisture completely, and maintenance of the apparatus, that is, opening of the process chamber, internal members (quartz jig, etc.) ) Needs to be periodically performed. Conventionally, for example, in the case of a single-wafer CVD apparatus, the maintenance time is determined based on the integrated number of processed wafers.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来のメンテナンス時期の判断方法には、以下のような課
題が残されている。すなわち、メンテナンス時の作業内
容やチャンバ解放時間によって、メンテナンスを行う度
に実際にチャンバ内に取り込まれる水分量が異なり、従
来のように、メンテナンス時期を、ウェーハの積算処理
枚数を基準に判断する場合、実際にチャンバ内に取り込
まれた水分とは関係なく一定の処理回数毎にメンテナン
スが行われ、必ずしも適切な時期にメンテナンスが行わ
れるとは限らなかった。例えば、前回メンテナンス時
に、想定されている量よりも多くの水分が取り込まれて
いた場合、所定の積算処理枚数に至るまで処理を行うと
良質な膜質等が得られなくなるおそれがあった。また、
前回メンテナンス時に取り込まれた水分が比較的少ない
場合、実際に必要とされるメンテナンス時期より早くメ
ンテナンスが行われることになってメンテナンス回数が
多くなり、スループットの低下を招いていた。However, the above-mentioned conventional method for determining the maintenance time has the following problems. In other words, the amount of water actually taken into the chamber every time maintenance is performed differs depending on the work content during maintenance and the chamber release time, and when the maintenance time is determined based on the integrated number of wafers processed as in the past, However, maintenance is performed at a certain number of times of processing regardless of the water actually taken into the chamber, and the maintenance is not always performed at an appropriate time. For example, if more water was taken in than the expected amount at the time of the previous maintenance, there is a possibility that high quality film quality or the like may not be obtained if the processing is performed up to the predetermined number of integrated processing sheets. Also,
If the amount of water taken in at the time of the previous maintenance is relatively small, the maintenance is performed earlier than the actually required maintenance time, and the number of maintenances increases, resulting in a decrease in throughput.
【０００５】本発明は、前述の課題に鑑みてなされたも
ので、適切なメンテナンス時期を判断することができる
半導体製造装置のメンテナンス時期判断方法を提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problem, and has as its object to provide a method for determining a maintenance time of a semiconductor manufacturing apparatus, which can determine an appropriate maintenance time.
【０００６】[0006]
【課題を解決するための手段】本発明は、前記課題を解
決するために以下の構成を採用した。すなわち、本発明
の半導体製造装置のメンテナンス時期判断方法は、反応
室内で腐食性ガス処理を行う半導体製造装置のメンテナ
ンス時期を判断する方法であって、前記腐食性ガス処理
を行っている際に前記反応室に接続された水分計で反応
室内の水分濃度を計測し、腐食性ガス処理を繰り返し行
ったときの前記水分濃度の変化に応じて前記メンテナン
ス時期を決定することを特徴とする。The present invention has the following features to attain the object mentioned above. That is, the maintenance time determination method for a semiconductor manufacturing apparatus of the present invention is a method for determining the maintenance time of a semiconductor manufacturing apparatus that performs corrosive gas treatment in a reaction chamber. The water concentration in the reaction chamber is measured by a moisture meter connected to the reaction chamber, and the maintenance time is determined according to a change in the water concentration when the corrosive gas treatment is repeatedly performed.
【０００７】この半導体製造装置のメンテナンス時期判
断方法では、腐食性ガス処理を行っている際に反応室に
接続された水分計で反応室内の水分濃度を計測し、腐食
性ガス処理を繰り返し行ったときの水分濃度の変化に応
じてメンテナンス時期を決定するので、上記水分濃度が
実際に反応室内に取り込まれた水分量に対応して変化す
ることから、適切なメンテナンス時期を正確に判断する
ことができる。In this method of determining the maintenance time of a semiconductor manufacturing apparatus, the moisture concentration in the reaction chamber is measured by a moisture meter connected to the reaction chamber during the corrosive gas treatment, and the corrosive gas treatment is repeated. Since the maintenance time is determined according to the change in the water concentration at the time, the water concentration changes according to the amount of water actually taken into the reaction chamber, so that it is possible to accurately determine an appropriate maintenance time. it can.
【０００８】また、本発明の半導体製造装置のメンテナ
ンス時期判断方法は、前記水分濃度の変化に基づいて前
記反応室内に取り込まれた前回メンテナンスからの水分
の積算量を算出し、該積算量に応じて前記メンテナンス
時期を決定することが好ましい。この半導体製造装置の
メンテナンス時期判断方法では、水分濃度の変化から算
出した水分の積算量に応じてメンテナンス時期を決定す
るので、実際に反応室内に取り込まれた水分量を正確に
見積もることができ、容易に適切なメンテナンス時期を
判断することができる。Further, the maintenance time judging method for a semiconductor manufacturing apparatus according to the present invention calculates an integrated amount of water taken into the reaction chamber from the previous maintenance based on the change of the water concentration, and It is preferable to determine the maintenance time by the above. In this method of determining the maintenance time of a semiconductor manufacturing apparatus, the maintenance time is determined according to the integrated amount of water calculated from the change in the water concentration, so that the amount of water actually taken into the reaction chamber can be accurately estimated. An appropriate maintenance time can be easily determined.
【０００９】さらに、本発明の半導体製造装置のメンテ
ナンス時期判断方法は、前記腐食性ガス処理を行ってい
る際に前記反応室に接続された圧力計で反応室内の圧力
を計測し、腐食性ガス処理を繰り返し行ったときの前記
圧力の変化と前記水分の積算量とに応じて前記メンテナ
ンス時期を決定することが好ましい。この半導体製造装
置のメンテナンス時期判断方法では、反応室内の圧力の
変化と水分の積算量とに応じてメンテナンス時期を決定
するので、反応室内の圧力変化から排気系の配管の流通
状態、例えば閉塞した際に生じる圧力変動等が検出さ
れ、これを水分濃度に加えて考慮することでさらに適切
なメンテナンス時期を決定することができる。Further, in the method for determining maintenance time of a semiconductor manufacturing apparatus according to the present invention, the pressure in the reaction chamber is measured by a pressure gauge connected to the reaction chamber during the corrosive gas treatment, and the corrosive gas is measured. It is preferable that the maintenance time is determined according to the change in the pressure and the integrated amount of the water when the processing is repeatedly performed. In this method for determining the maintenance time of the semiconductor manufacturing apparatus, the maintenance time is determined according to the change in the pressure in the reaction chamber and the integrated amount of moisture. A pressure fluctuation or the like occurring at that time is detected, and by taking this into account in addition to the moisture concentration, a more appropriate maintenance time can be determined.
【００１０】また、本発明の半導体製造装置のメンテナ
ンス時期判断方法は、前記水分計が、前記反応室に接続
された管状セル本体内にレーザ光を入射させ透過したレ
ーザ光の吸収スペクトルを測定するレーザ水分計である
ことが好ましい。近年、腐食ガス中の水分濃度を測定す
る手段として、例えば特開平５−９９８４５号公報や特
開平１１−１８３３６６号公報等に、プロセスチャンバ
に接続された管状セル本体内にレーザ光を入射させ透過
したレーザ光の吸収スペクトルを測定するレーザ水分計
が提案されている。このレーザ水分計は、ガスに非接触
で測定可能なため腐食性ガスでも高精度に測定できるも
のである。すなわち、上記半導体製造装置のメンテナン
ス時期判断方法では、水分計として上記レーザ水分計を
用いるので、プロセス中においても、反応室内の水分濃
度を正確に測定することが可能になり、さらに高精度に
メンテナンス時期を決定することができる。Further, in the method for judging maintenance of a semiconductor manufacturing apparatus according to the present invention, the moisture meter measures an absorption spectrum of a laser beam transmitted through a laser beam incident on a tubular cell body connected to the reaction chamber. It is preferably a laser moisture meter. In recent years, as a means for measuring the moisture concentration in a corrosive gas, for example, Japanese Unexamined Patent Publication No. Hei 5-99845 and Japanese Unexamined Patent Publication No. Hei 11-183366 have disclosed a method in which a laser beam is incident on a tubular cell body connected to a process chamber and transmitted therethrough. There has been proposed a laser moisture meter for measuring the absorption spectrum of a laser beam. This laser moisture meter can measure a corrosive gas with high accuracy because it can measure without contacting the gas. That is, in the method for determining the maintenance time of the semiconductor manufacturing apparatus, since the laser moisture meter is used as the moisture meter, it is possible to accurately measure the moisture concentration in the reaction chamber even during the process, and to perform the maintenance with higher accuracy. You can decide when.
【００１１】[0011]
【発明の実施の形態】以下、本発明に係る半導体製造装
置のメンテナンス時期判断方法の一実施形態を、図１か
ら図３を参照しながら説明する。これらの図にあって、
符号１はプロセスチャンバ、２は搬送用チャンバ、３は
搬入ロードロック室、４は搬出ロードロック室、５はプ
ロセス用水分計を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for determining a maintenance time of a semiconductor manufacturing apparatus according to the present invention will be described below with reference to FIGS. In these figures,
Reference numeral 1 denotes a process chamber, 2 denotes a transfer chamber, 3 denotes a load lock chamber, 4 denotes a load lock chamber, and 5 denotes a process moisture meter.
【００１２】図１は、本発明の半導体製造装置を例えば
枚葉式のエピタキシャル結晶成長装置に適用した場合を
示すものである。該エピタキシャル結晶成長装置は、図
１に示すように、内部にシリコン基板（基板）Ｗが配置
される中空の気密容器である３つの石英製のプロセスチ
ャンバ（反応室）１と、これらプロセスチャンバ１内に
シリコン基板Ｗを搬入する際に内部の密閉空間で雰囲気
の置換を行う搬送用チャンバ２と、該搬送用チャンバ２
にプロセス前のシリコン基板Ｗを搬入する搬入ロードロ
ック室３および搬送用チャンバ２からプロセス後のシリ
コン基板Ｗを取り出すための搬出ロードロック室４とを
備えている。FIG. 1 shows a case where the semiconductor manufacturing apparatus of the present invention is applied to, for example, a single wafer type epitaxial crystal growth apparatus. As shown in FIG. 1, the epitaxial crystal growth apparatus includes three process chambers (reaction chambers) 1 made of quartz, each of which is a hollow airtight container in which a silicon substrate (substrate) W is disposed, and A transfer chamber 2 for replacing the atmosphere in a sealed space inside when the silicon substrate W is loaded into the transfer chamber;
A load lock chamber 3 for loading the silicon substrate W before the process and a load lock chamber 4 for unloading the silicon substrate W after the process from the transfer chamber 2.
【００１３】前記各プロセスチャンバ１には、該プロセ
スチャンバ１に導入されたガスをサンプリングしてガス
中に含まれる水分を計測するプロセス用水分計５とプロ
セスチャンバ１内の圧力を計測する圧力計７とが設けら
れている。また、搬送用チャンバ２内にも、内部の雰囲
気中の水分を計測する搬送系水分計６が設置されてい
る。該搬送系水分計６は、例えば、精度及び応答速度が
高い後述する水分計本体１０と同様のものを有するレー
ザ水分計が望ましいが、アルミナ・コンデンサ等に水分
を吸着させてその電気容量の変化を計測する静電容量方
式の水分計や質量分析法を用いた水分計等でも構わな
い。In each of the process chambers 1, a process moisture meter 5 for sampling the gas introduced into the process chamber 1 and measuring the moisture contained in the gas, and a pressure gauge for measuring the pressure in the process chamber 1 are provided. 7 are provided. A transfer moisture meter 6 for measuring the moisture in the internal atmosphere is also provided in the transfer chamber 2. The transport system moisture meter 6 is desirably a laser moisture meter having, for example, the same as the moisture meter body 10 described later, which has high accuracy and high response speed, but changes the electric capacity by adsorbing moisture to an alumina capacitor or the like. Or a capacitance-type moisture meter for measuring the water content or a moisture meter using mass spectrometry.
【００１４】前記プロセスチャンバ１は、腐食性ガス等
のガス供給源（図示略）に接続されて該ガス供給源から
のガス（ＳｉＣｌ2Ｈ2、ＳｉＣｌ3Ｈ、ＨＣｌ、Ｈ2、Ｎ
2、Ｂ2Ｈ6、ＰＨ3等）を導入可能になっているととも
に、ガス排気系を介して排ガス処理設備（図示略）に接
続されプロセスチャンバ１内で反応に供された後の腐食
性ガス等を排ガス処理設備へと排気可能になっている。The process chamber 1 is connected to a gas supply source (not shown) such as a corrosive gas, and gas (SiCl 2 H 2 , SiCl 3 H, HCl, H 2 , N 2 ) from the gas supply source.
2, B 2 H 6, together are enabled introducing PH 3 or the like), corrosion resistance after being subjected to the reaction in the exhaust gas treatment system (connected to not shown) within the process chamber 1 via the gas exhaust system Gas and the like can be exhausted to an exhaust gas treatment facility.
【００１５】前記プロセス用水分計５は、図２に示すよ
うに、プロセスチャンバ１のガス排気系及びバルブ（図
示略）を介して一端が接続されたサンプルラインである
サンプリング配管９と、該サンプリング配管９の他端に
接続されプロセスチャンバ１からの腐食性ガスに含まれ
る水分を計測する水分計本体１０と、該水分計本体１０
の後端に接続管１１を介して接続されたロータリーポン
プ１２とを備えている。As shown in FIG. 2, the process moisture meter 5 includes a sampling pipe 9 which is a sample line connected at one end through a gas exhaust system of a process chamber 1 and a valve (not shown). A moisture meter body 10 connected to the other end of the pipe 9 for measuring moisture contained in the corrosive gas from the process chamber 1;
And a rotary pump 12 connected to the rear end through a connection pipe 11.
【００１６】前記水分計本体１０は、筐体１０ａ内に管
状セル本体１９が設けられ、該管状セル本体１９には、
一端側にサンプリング配管９が接続されているとともに
他端側に接続管１１が接続されている。管状セル本体１
９は、両端に透光性窓材１９ａが装着され、一方の透光
性窓材１９ａの外側には赤外レーザ光Ｌ（波長１．３〜
１．５５μｍ）を発生する波長可変半導体レーザＬＤが
対向して設けられ、他方の透光性窓材１９ａの外側には
管状セル本体１９内を透過した赤外レーザ光Ｌを受光し
てその受光強度を電気信号に変換する光検出器ＰＤが対
向して設けられている。In the main body 10 of the moisture meter, a tubular cell body 19 is provided in a housing 10a.
A sampling pipe 9 is connected to one end and a connection pipe 11 is connected to the other end. Tubular cell body 1
9 is provided with a translucent window material 19a at both ends, and an infrared laser beam L (wavelength 1.3 to 1.0) is provided outside one translucent window material 19a.
A wavelength tunable semiconductor laser LD for generating 1.55 μm) is provided to face the outside, and the infrared laser beam L transmitted through the inside of the tubular cell body 19 is received outside the other translucent window member 19 a and received. A photodetector PD for converting the intensity into an electric signal is provided facing the photodetector PD.
【００１７】なお、前記サンプリング配管９および前記
接続管１１には、電流供給源（図示略）に接続されたリ
ボンヒータ２０が巻回され、さらにその上にシリコンゴ
ムの断熱材２１が巻かれている。なお、リボンヒータ２
０は、流す電流が調整されてサンプリング配管９および
接続管１１を１００℃以上に加熱し、これら配管内の副
生成反応物の付着を抑制するものである。また、水分計
本体１０の管状セル本体１９および透光性窓材１９ａに
も、これらを加熱する電熱線を主としたセル用ヒータ２
２が取り付けられ、１００℃以上に加熱される。さら
に、水分計本体１０は、リボンヒータ２０及びセル用ヒ
ータ２２によって１００℃以上に加熱されたガスの温度
に応じて、その測定感度の調整・校正が予め行われてい
る。A ribbon heater 20 connected to a current supply source (not shown) is wound around the sampling pipe 9 and the connection pipe 11, and a heat insulating material 21 made of silicon rubber is further wound thereon. I have. The ribbon heater 2
A value of 0 controls the flowing current to heat the sampling pipe 9 and the connecting pipe 11 to 100 ° C. or higher, thereby suppressing adhesion of by-products in these pipes. In addition, the tubular cell body 19 and the translucent window member 19a of the moisture meter body 10 are also provided with a cell heater 2 mainly including a heating wire for heating them.
2 is attached and heated to 100 ° C. or higher. Further, the measurement sensitivity of the moisture meter main body 10 is adjusted and calibrated in advance according to the temperature of the gas heated to 100 ° C. or higher by the ribbon heater 20 and the cell heater 22.
【００１８】次に、本実施形態におけるエピタキシャル
結晶成長装置のメンテナンス時期判断方法について、図
３を用いて説明する。Next, a method for determining the maintenance time of the epitaxial crystal growth apparatus according to this embodiment will be described with reference to FIG.
【００１９】まず、上記成長装置を用いてシリコン基板
Ｗにエピタキシャル成長を行う工程について説明する
と、シリコン基板Ｗを搬入ロードロック室３から搬送用
チャンバ２内に搬入し、搬送用チャンバ２内の雰囲気を
Ｎ2等の不活性ガスに置換するとともに、搬送系水分計
６で雰囲気中の水分を計測し、十分に水分が低減された
状態を確認した後に、プロセスチャンバ１内にシリコン
基板Ｗを搬送する。First, the step of epitaxially growing a silicon substrate W using the above-described growth apparatus will be described. The silicon substrate W is loaded into the transfer chamber 2 from the load lock chamber 3 and the atmosphere in the transfer chamber 2 is changed. After the atmosphere is replaced with an inert gas such as N 2 and the moisture in the atmosphere is measured by the transport moisture meter 6 to confirm that the moisture has been sufficiently reduced, the silicon substrate W is transported into the process chamber 1. .
【００２０】プロセスチャンバ１内は、プロセス前で
は、Ｎ2等の不活性ガスでパージ状態とされているが、
搬送用チャンバ２から搬入したシリコン基板Ｗを配置し
て所定温度まで加熱した後、所定の腐食性ガス等を導入
してシリコン基板Ｗの表面上にエピタキシャル成長を行
う。このとき、ロータリーポンプ１２を駆動するととも
にサンプリング配管９のバルブ等を開け、流入量を調整
しながら、プロセスチャンバ１で反応に供され加熱され
た腐食性ガス等の一部をサンプリング配管９を介して水
分計本体１０に常時導入する。Before the process, the inside of the process chamber 1 is purged with an inert gas such as N 2 .
After the silicon substrate W carried in from the transfer chamber 2 is arranged and heated to a predetermined temperature, a predetermined corrosive gas or the like is introduced to perform epitaxial growth on the surface of the silicon substrate W. At this time, a part of the corrosive gas or the like which is subjected to the reaction in the process chamber 1 and is heated through the sampling pipe 9 while driving the rotary pump 12 and opening the valve of the sampling pipe 9 to adjust the inflow amount. And always introduced into the moisture meter main body 10.
【００２１】サンプリングされたガスは、水分計本体１
０内の管状セル本体１９内に流入し、半導体レーザＬＤ
からの赤外レーザ光Ｌが照射される。管状セル本体１９
内のガスを透過した赤外レーザ光Ｌは、光検出器ＰＤで
受光され、その受光量から得られた吸収スペクトル強度
によりガス中の水分濃度が計測され、ガスに含まれる水
分の定量分析が行われる。なお、管状セル本体１９に流
入したガスは、接続管１１、ロータリーポンプ１２を介
して排気系に排出される。また、プロセスチャンバ１内
の圧力は、圧力計７により常時計測されている。エピタ
キシャル成長終了後に、プロセスチャンバ１内を不活性
ガスで置換し、さらに搬送用チャンバ２を介して搬出ロ
ードロック室４から処理済みシリコン基板Ｗを搬出す
る。The sampled gas is supplied to the moisture meter body 1
The semiconductor laser LD flows into the tubular cell body 19 in the
Is irradiated with infrared laser light L. Tubular cell body 19
The infrared laser light L transmitted through the gas inside is received by the photodetector PD, the moisture concentration in the gas is measured by the absorption spectrum intensity obtained from the received light amount, and the quantitative analysis of the moisture contained in the gas is performed. Done. The gas flowing into the tubular cell body 19 is discharged to the exhaust system via the connection pipe 11 and the rotary pump 12. The pressure in the process chamber 1 is constantly measured by the pressure gauge 7. After the completion of the epitaxial growth, the inside of the process chamber 1 is replaced with an inert gas, and the processed silicon substrate W is unloaded from the unloading load lock chamber 4 via the transfer chamber 2.
【００２２】上記処理を繰り返して複数枚のシリコン基
板Ｗに順次エピタキシャル成長を行うが、その際にプロ
セスチャンバ１の水分濃度を、図３に示すように、プロ
セス用水分計５により常時計測し、その履歴を記録して
おく。なお、図３において１枚の成膜処理中に水分濃度
の大小のピークが検出されているが、小さいピークは実
際の成膜中の水分濃度であり、大きいピークはＨＣｌ
（塩化水素）によってチャンバ内に付着したポリシリコ
ンをエッチングした際の水分濃度である。The above process is repeated to successively perform epitaxial growth on a plurality of silicon substrates W. At this time, as shown in FIG. 3, the moisture concentration in the process chamber 1 is constantly measured by a process moisture meter 5 as shown in FIG. Keep a history. In FIG. 3, peaks of the water concentration are detected during one film formation process. The small peak is the actual water concentration during the film formation, and the large peak is HCl.
This is the moisture concentration when the polysilicon deposited in the chamber is etched by (hydrogen chloride).
【００２３】図３からもわかるように、処理枚数が増え
る毎に水分濃度は徐々に小さくなっていく。この水分の
減少量は、プロセスチャンバ１内に実際に取り込まれ腐
食やパーティクル等への反応に供した水分量に相当する
と考えられるため、この水分濃度の変化（水分濃度の減
少）に基づいてプロセスチャンバ１内に取り込まれた前
回メンテナンスからの水分の積算量を算出し、該積算量
に応じて次のメンテナンス時期を決定する。すなわち、
計測された水分濃度の変化から水分積算量の推移を推測
し、所定の積算量になる時期を次のメンテナンス時期と
して設定しておくとともに、水分濃度の変化から算出し
た水分の積算量が実際に所定の積算量になった時点で、
メンテナンスを行う。なお、他の要因（配管内の副生成
物付着等）に基づいて最大処理枚数が予め設定されてお
り、この最大処理枚数より早い時期に上記所定の積算量
に達した場合は、上記メンテナンスを行うが、水分濃度
が低く所定の積算量になる時期がこの最大処理枚数にな
る時期より遅い場合は、最大処理枚数になった時点で一
旦メンテナンスを行う。As can be seen from FIG. 3, the water concentration gradually decreases as the number of processed sheets increases. Since the amount of water reduction is considered to correspond to the amount of water actually taken into the process chamber 1 and subjected to corrosion, reaction to particles, etc., the process is performed based on this change in water concentration (reduction in water concentration). The integrated amount of water taken from the previous maintenance taken into the chamber 1 is calculated, and the next maintenance time is determined according to the integrated amount. That is,
The change of the integrated amount of water is estimated from the change of the measured water concentration, and the time when the predetermined integrated amount is reached is set as the next maintenance time, and the integrated amount of the water calculated from the change of the water concentration is actually calculated. At the time when the specified integration amount is reached,
Perform maintenance. The maximum number of sheets to be processed is set in advance based on other factors (such as adhesion of by-products in the pipe). If the predetermined integrated amount is reached earlier than the maximum number of sheets to be processed, the maintenance is performed. If the time when the moisture concentration is low and the predetermined integrated amount is later than the time when the maximum number of processed sheets is reached, maintenance is performed once when the maximum number of processed sheets is reached.
【００２４】本実施形態では、水分濃度の変化から算出
した水分の積算量に応じてメンテナンス時期を決定する
ので、実際にプロセスチャンバ１内に取り込まれた水分
量を正確に見積もることができ、適切な時期にメンテナ
ンスを行うことができる。したがって、メンテナンス毎
に異なる実際の水分取り込み量に応じて次のメンテナン
ス時期を決定でき、良質な成膜処理を常に維持できると
共に、メンテナンス回数の低減及びメンテナンス時期の
延長が可能になり、スループットを向上させることがで
きる。In the present embodiment, the maintenance time is determined in accordance with the integrated amount of water calculated from the change in the water concentration. Therefore, the amount of water actually taken into the process chamber 1 can be accurately estimated. Maintenance can be performed at appropriate times. Therefore, the next maintenance time can be determined according to the actual water intake amount that differs for each maintenance, and high-quality film formation processing can be constantly maintained, and the number of maintenance times can be reduced and the maintenance time can be extended, thereby improving throughput. Can be done.
【００２５】また、プロセスチャンバ１内の圧力も、水
分濃度と同様に、圧力計７により常時計測しているの
で、ガス排気系の配管の流通状態（例えば、副生成反応
物の付着による配管の閉塞で生じるプロセスチャンバ１
内の圧力変動等）を検出することができ、上記水分の積
算量と上記圧力変化と合わせて考慮し、メンテナンス時
期を見積もることにより、より適切なメンテナンス時期
を決定することができる。なお、上記水分の積算量と上
記圧力変化とに、さらに製造時の不良品発生率のデータ
等とを合わせて次のメンテナンス時期を見積もること
で、さらに適切なメンテナンス時期を決定することがで
きる。なお、常時、プロセスチャンバ１内の水分濃度及
び圧力を計測しているので、その変化が通常時に対して
異常な傾向を示した場合には、これに応じて直ちにその
原因究明及びメンテナンス作業を行うことが可能にな
る。Also, the pressure in the process chamber 1 is constantly measured by the pressure gauge 7 in the same manner as the water concentration, so that the flow state of the pipe of the gas exhaust system (for example, Process chamber 1 caused by blockage
Pressure fluctuation in the inside) can be detected, and a more appropriate maintenance time can be determined by estimating the maintenance time in consideration of the integrated amount of water and the pressure change. A more appropriate maintenance time can be determined by estimating the next maintenance time by combining the integrated amount of moisture and the pressure change with data on the rate of occurrence of defective products during manufacturing. Since the water concentration and the pressure in the process chamber 1 are constantly measured, if the change shows an abnormal tendency with respect to the normal time, the cause is investigated immediately and the maintenance work is immediately performed. It becomes possible.
【００２６】また、水分濃度の検出手段としてプロセス
用水分計５に上記レーザ水分計を採用しているので、プ
ロセス中においても、プロセスチャンバ１内の水分濃度
を正確に測定することが可能になり、高精度にメンテナ
ンス時期を決定することができる。Further, since the laser moisture meter is employed as the process moisture meter 5 as the moisture concentration detecting means, the moisture concentration in the process chamber 1 can be accurately measured even during the process. The maintenance time can be determined with high accuracy.
【００２７】なお、本発明は、次のような実施形態をも
含むものである。上記実施形態では、半導体製造装置と
してエピタキシャル成長を行う気相成長装置に適用した
が、反応室内で腐食性ガスを反応させる装置であれば、
他の半導体製造装置に用いても構わない。例えば、他の
薄膜を基板上に形成するＣＶＤ装置や腐食性ガスを用い
て基板表面をエッチングするドライエッチング装置等に
採用しても構わない。また、上記実施形態では、枚葉式
のエピタキシャル成長装置に適用したが、これに限定さ
れるものではなく、他の方式（種々のバッチ式等）に適
用しても構わない。The present invention also includes the following embodiments. In the above embodiment, the present invention is applied to a vapor phase growth apparatus for performing epitaxial growth as a semiconductor manufacturing apparatus, but any apparatus that causes a corrosive gas to react in a reaction chamber may be used.
It may be used for another semiconductor manufacturing apparatus. For example, the present invention may be applied to a CVD apparatus for forming another thin film on a substrate, a dry etching apparatus for etching a substrate surface using a corrosive gas, or the like. Further, in the above embodiment, the present invention is applied to a single wafer type epitaxial growth apparatus. However, the present invention is not limited to this, and may be applied to other methods (such as various batch methods).
【００２８】[0028]
【発明の効果】本発明の半導体製造装置のメンテナンス
時期判断方法によれば、腐食性ガス処理を行っている際
に反応室に接続された水分計で反応室内の水分濃度を計
測し、腐食性ガス処理を繰り返し行ったときの水分濃度
の変化に応じて半導体製造装置のメンテナンス時期を決
定するので、実際に反応室内に取り込まれた水分量を正
確に見積もることができ、適切なメンテナンス時期を正
確に判断することができる。したがって、装置の良好な
状態を常に維持できると共に、メンテナンス回数の低減
及びメンテナンス時期の延長が可能になり、スループッ
トの向上を図ることができる。According to the method for determining the maintenance time of a semiconductor manufacturing apparatus of the present invention, the moisture concentration in the reaction chamber is measured by a moisture meter connected to the reaction chamber during the corrosive gas treatment, and the corrosiveness is measured. Since the maintenance time of the semiconductor manufacturing equipment is determined according to the change in the water concentration when the gas processing is repeatedly performed, the amount of water actually taken into the reaction chamber can be accurately estimated, and the appropriate maintenance time can be accurately determined. Can be determined. Therefore, it is possible to always maintain a good state of the apparatus, to reduce the number of times of maintenance and to extend the maintenance time, and to improve the throughput.
【図１】 本発明に係る半導体製造装置のメンテナンス
時期判断方法の一実施形態におけるエピタキシャル結晶
成長装置を示す概略的な全体平面図である。FIG. 1 is a schematic overall plan view showing an epitaxial crystal growth apparatus in one embodiment of a method for determining a maintenance time of a semiconductor manufacturing apparatus according to the present invention.
【図２】 本発明に係る半導体製造装置のメンテナンス
時期判断方法の一実施形態におけるプロセス用水分計の
構成を示す断面図である。FIG. 2 is a cross-sectional view showing a configuration of a process moisture meter in one embodiment of a method for determining a maintenance time of a semiconductor manufacturing apparatus according to the present invention.
【図３】 本発明に係る半導体製造装置のメンテナンス
時期判断方法の一実施形態における成膜処理を繰り返し
た際に計測された水分濃度の変化を示すグラフである。FIG. 3 is a graph showing a change in water concentration measured when a film forming process is repeated in one embodiment of a method for determining a maintenance time of a semiconductor manufacturing apparatus according to the present invention.
１ プロセスチャンバ（反応室） ５ プロセス用水分計（レーザ水分計） ７ 圧力計 １０ 水分計本体 １９ 管状セル本体 Ｗ シリコン基板 Reference Signs List 1 process chamber (reaction chamber) 5 process moisture meter (laser moisture meter) 7 pressure gauge 10 moisture meter main body 19 tubular cell main body W silicon substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山岡 智則 東京都千代田区大手町一丁目５番１号 三 菱マテリアルシリコン株式会社内 (72)発明者 石原 良夫 東京都港区西新橋１−16−７ 日本酸素株 式会社内 (72)発明者 増崎 宏 東京都港区西新橋１−16−７ 日本酸素株 式会社内 Ｆターム(参考） 5F045 AC01 AC05 AC13 AF03 BB08 BB10 DQ17 EB08 EC07 GB04 GB06 HA25 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tomonori Yamaoka 1-5-1, Otemachi, Chiyoda-ku, Tokyo Within Mitsubishi Materials Silicon Co., Ltd. (72) Inventor Yoshio Ishihara 1-16- Nishi-Shimbashi, Minato-ku, Tokyo 7 Nippon Oxygen Co., Ltd. (72) Inventor Hiroshi Masusaki 1-16-7 Nishi-Shimbashi, Minato-ku, Tokyo F-term (for reference) 5F045 AC01 AC05 AC13 AF03 BB08 BB10 DQ17 EB08 EC07 GB04 GB06 HA25
Claims (4)
製造装置のメンテナンス時期を判断する方法であって、 前記腐食性ガス処理を行っている際に前記反応室に接続
された水分計で反応室内の水分濃度を計測し、腐食性ガ
ス処理を繰り返し行ったときの前記水分濃度の変化に応
じて前記メンテナンス時期を決定することを特徴とする
半導体製造装置のメンテナンス時期判断方法。1. A method for determining a maintenance time of a semiconductor manufacturing apparatus for performing a corrosive gas treatment in a reaction chamber, wherein a reaction is performed by a moisture meter connected to the reaction chamber during the corrosive gas treatment. A method for determining a maintenance time of a semiconductor manufacturing apparatus, comprising: measuring a water concentration in a room; and determining the maintenance time according to a change in the water concentration when the corrosive gas treatment is repeatedly performed.
室内に取り込まれた前回メンテナンスからの水分の積算
量を算出し、該積算量に応じて前記メンテナンス時期を
決定することを特徴とする請求項１記載の半導体製造装
置のメンテナンス時期判断方法。2. The method according to claim 1, further comprising calculating an integrated amount of water taken into the reaction chamber from a previous maintenance based on the change in the water concentration, and determining the maintenance time according to the integrated amount. Item 2. The method for judging maintenance time of a semiconductor manufacturing apparatus according to Item 1.
記反応室に接続された圧力計で反応室内の圧力を計測
し、腐食性ガス処理を繰り返し行ったときの前記圧力の
変化と前記水分の積算量とに応じて前記メンテナンス時
期を決定することを特徴とする請求項２記載の半導体製
造装置のメンテナンス時期判断方法。3. The pressure in the reaction chamber is measured by a pressure gauge connected to the reaction chamber when the corrosive gas treatment is performed, and the change in the pressure when the corrosive gas treatment is repeatedly performed and the pressure change are measured. 3. The method according to claim 2, wherein the maintenance time is determined in accordance with an integrated amount of moisture.
管状セル本体内にレーザ光を入射させ透過したレーザ光
の吸収スペクトルを測定するレーザ水分計であることを
特徴とする請求項１から３のいずれかに記載の半導体製
造装置のメンテナンス時期判断方法。4. The moisture meter according to claim 1, wherein the moisture meter is a laser moisture meter that measures the absorption spectrum of the transmitted laser light by irradiating the laser light into a tubular cell body connected to the reaction chamber. 4. The maintenance timing determination method for a semiconductor manufacturing apparatus according to any one of the above items.
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000052555A JP3495966B2 (en) | 2000-02-28 | 2000-02-28 | Method for determining maintenance time of semiconductor manufacturing equipment |
| TW089117350A TW460942B (en) | 1999-08-31 | 2000-08-28 | CVD device, purging method, method for determining maintenance time for a semiconductor making device, moisture content monitoring device, and semiconductor making device with such moisture content monitoring device |
| KR10-2000-0050604A KR100431040B1 (en) | 1999-08-31 | 2000-08-30 | Cvd apparatus and purging method thereof |
| US09/651,255 US6491758B1 (en) | 1999-08-31 | 2000-08-30 | CVD apparatus equipped with moisture monitoring |
| CN00131310A CN1131891C (en) | 1999-08-31 | 2000-08-31 | Chemical vapor phase deposition apparatus, its purification and apparatus for manufacturing semiconductors |
| CNB2003101028237A CN1282764C (en) | 1999-08-31 | 2000-08-31 | Purifying metod and chemical vapour-phase deposition deivce |
| DE10042881A DE10042881B4 (en) | 1999-08-31 | 2000-08-31 | A CVD device for forming a semiconductor film on a wafer and a method for judging maintenance times of a CVD device |
| US10/021,259 US6887721B2 (en) | 1999-08-31 | 2001-12-19 | Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses |
| KR10-2002-0050762A KR100415368B1 (en) | 1999-08-31 | 2002-08-27 | Method for determining maintenance time for semiconductor manufacturing apparatus |
| KR10-2002-0050756A KR100391872B1 (en) | 1999-08-31 | 2002-08-27 | Moisture monitoring apparatus and semiconductor manufacturing apparatus having same |
| KR10-2002-0050758A KR100445945B1 (en) | 1999-08-31 | 2002-08-27 | Purging method of cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000052555A JP3495966B2 (en) | 2000-02-28 | 2000-02-28 | Method for determining maintenance time of semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001244200A true JP2001244200A (en) | 2001-09-07 |
| JP3495966B2 JP3495966B2 (en) | 2004-02-09 |
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ID=18574054
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000052555A Expired - Lifetime JP3495966B2 (en) | 1999-08-31 | 2000-02-28 | Method for determining maintenance time of semiconductor manufacturing equipment |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024043166A1 (en) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | Device for treatment with plasma and substrate-treating system |
-
2000
- 2000-02-28 JP JP2000052555A patent/JP3495966B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024043166A1 (en) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | Device for treatment with plasma and substrate-treating system |
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