JP2001230498A5 - - Google Patents

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Publication number
JP2001230498A5
JP2001230498A5 JP2000038279A JP2000038279A JP2001230498A5 JP 2001230498 A5 JP2001230498 A5 JP 2001230498A5 JP 2000038279 A JP2000038279 A JP 2000038279A JP 2000038279 A JP2000038279 A JP 2000038279A JP 2001230498 A5 JP2001230498 A5 JP 2001230498A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000038279A
Other languages
Japanese (ja)
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JP2001230498A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2000038279A priority Critical patent/JP2001230498A/en
Priority claimed from JP2000038279A external-priority patent/JP2001230498A/en
Publication of JP2001230498A publication Critical patent/JP2001230498A/en
Publication of JP2001230498A5 publication Critical patent/JP2001230498A5/ja
Withdrawn legal-status Critical Current

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JP2000038279A 2000-02-16 2000-02-16 Group iii nitride-base compound semiconductor laser Withdrawn JP2001230498A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000038279A JP2001230498A (en) 2000-02-16 2000-02-16 Group iii nitride-base compound semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000038279A JP2001230498A (en) 2000-02-16 2000-02-16 Group iii nitride-base compound semiconductor laser

Publications (2)

Publication Number Publication Date
JP2001230498A JP2001230498A (en) 2001-08-24
JP2001230498A5 true JP2001230498A5 (en) 2006-11-30

Family

ID=18562041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000038279A Withdrawn JP2001230498A (en) 2000-02-16 2000-02-16 Group iii nitride-base compound semiconductor laser

Country Status (1)

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JP (1) JP2001230498A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100395897C (en) * 2003-08-08 2008-06-18 厦门三安电子有限公司 Nitride device upside down mounting method
WO2005091454A1 (en) * 2004-03-18 2005-09-29 Sanyo Electric Co., Ltd. Semiconductor laser element and manufacturing method thereof
CN100481535C (en) 2004-03-24 2009-04-22 日立电线精密株式会社 Manufacturing method of luminescent device and luminescent device
JP5060017B2 (en) * 2004-08-12 2012-10-31 セイコーエプソン株式会社 projector
KR100755279B1 (en) 2005-10-11 2007-09-04 (주)더리즈 Mount structure of LED and a method thereof
EP1906496B1 (en) * 2006-09-29 2010-01-06 OSRAM Opto Semiconductors GmbH Semiconductor laser and method for manufacturing the same
JP2011165799A (en) * 2010-02-08 2011-08-25 Showa Denko Kk Flip-chip light emitting diode and method for manufacturing the same, and light emitting diode lamp
KR101326179B1 (en) * 2012-02-21 2013-11-07 주식회사 세미콘라이트 Semiconductor light emitting device
JP7035377B2 (en) * 2017-03-27 2022-03-15 ウシオ電機株式会社 Semiconductor laser device
CN107731979A (en) * 2017-10-24 2018-02-23 江门市奥伦德光电有限公司 A kind of LED chip of positive assembling structure and preparation method thereof
CN113471062A (en) * 2021-06-30 2021-10-01 中国科学技术大学 Preparation method of III-group oxide film and epitaxial wafer thereof

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