JP2001230208A - Surface-treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface-treating apparatus which can quickly treat a surface in a highly quality even when the surface has a large area. SOLUTION: The casing (2) of this surface-treating apparatus (1) is divided into two chambers of a plasma generating chamber (3) provided with plasma generating electrodes (5) and (6) and a substrate treating chamber (4) provided with a substrate supporting table (9). The anode electrode (6) constituting the partition wall between the chambers (3) and (4) has a plasma blowing-out port (7). The upper surface of the port (7) has substantially continuous long slits which are formed in, for example, a spiral, etc., that can be drawn with a single stroke of a brush.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus suitable for various surface treatments on a substrate, and more particularly, to a surface treatment apparatus suitable for film formation on a substrate. The present invention relates to a surface treatment apparatus capable of performing the following.

[0002]

2. Description of the Related Art Conventional parallel plate plasma CVD (Chem)
As in the surface treatment apparatus 21 shown in FIG. 9, a pair of plate-like plasma generating electrodes 23 and 24 are provided in a casing 22 so as to face each other in parallel. The upper electrode 23 of the plasma generating electrodes 23 and 24 is formed of a hollow body, and a raw material gas is introduced into the hollow body from a raw gas introduction pipe 25. Upper electrode 2
3, a number of source gas supply holes 23a are formed in the lower wall portion,
The source gas can be supplied to the processing region of the substrate in a shower shape. The lower electrode 24 has an upper surface serving as a mounting surface of the substrate S, and further below the lower electrode 24,
A heater 26 is provided to adjust the temperature of the substrate S to a temperature suitable for vapor phase growth. When power is applied between the plasma generating electrodes 23 and 24 by a high-frequency power supply P (13.56 MHz power supply) while the substrate S is mounted on the lower electrode 24, a voltage is applied between these electrodes 23 and 24. Plasma is generated and a source gas, for example, a monosilane gas is activated, and a silicon film is formed on the surface of the substrate S.

[0003] Such a conventional parallel plate type plasma CVD.
The apparatus has an advantage that a large-area substrate can be formed by a single film-forming process by increasing the area of the plate-shaped plasma generating electrode 24 on which the substrate is placed. I have. However, in the conventional parallel plate type plasma CVD apparatus, both plasma generating electrodes 23,
The source gas converted into plasma by 24 is uniformly diffused into the film forming gas processing chamber, and only a part thereof contributes to the film formation of the substrate mounted on the electrode. For this reason, the utilization efficiency of the source gas is low. For example, when an amorphous silicon thin film or a crystalline silicon thin film is to be formed on a substrate,
The film formation rate is low, about 1-2 ° / sec., Despite the large input power. Therefore, it takes a longer time to manufacture a semiconductor device having a relatively large thickness such as a solar cell, which has been a main factor of low throughput and high cost.

In order to increase the film forming speed, it is conceivable to increase the power supplied by the high frequency power supply P.
However, by increasing the input power, the energy of the charged particles in the plasma increases. The damage caused by the collision of the charged particles having high energy with the substrate deteriorates the quality of the film formed on the surface of the substrate S. Further, with the increase of the high-frequency power by the high-frequency power source P, a large amount of fine powder is generated in the gas phase, and the deterioration of the film quality due to the fine powder also increases dramatically.

Therefore, a conventional parallel plate type plasma CV
In the case of the D apparatus, the input power must be suppressed in order to avoid damage due to collision of such high energy charged particles and deterioration of film quality due to fine powder. That is, the upper limit of the input power substantially exists, and the film forming rate cannot be increased to a certain level or more.

Therefore, a thin film forming apparatus disclosed in Japanese Patent Application Laid-Open No. 61-32417, for example, comprises a definition chamber having a pair of opposed plasma generating electrodes in a vacuum chamber for forming a thin film on a substrate. An activation gas generator is provided. A single pore is formed in one wall of the activation gas generator for ejecting the activation gas into the vacuum chamber. A substrate is supported in the vacuum chamber at a position facing the pores.

In the thin film forming apparatus, a high frequency voltage is applied to the pair of plasma generating electrodes to generate a glow discharge between the two electrodes to generate plasma. The source gas introduced into the activated gas generator is decomposed by the plasma. At this time, by adjusting the vacuum pump disposed in the vacuum chamber and the conductance of the pore, the degree of vacuum in the vacuum chamber is set to be 2-3 times higher than in the activated gas generator.
The activated source gas is ejected from the pores toward the substrate so as to have an order of magnitude lower.

[0008] A plasma generating electrode is disposed inside an activated gas generator defined in a vacuum chamber for forming a thin film as described above, and the raw material gas activated in the activated gas generator is directed toward a substrate. In the thin film forming apparatus that actively sprays, the film forming speed can be increased without increasing the input power. Furthermore, even when the input power is increased to generate stronger plasma, the plasma generating electrode is installed in the defined activated gas generator, and the substrate is generated by glow discharge between the electrodes. There is no danger of damaging the surface. Therefore, it is possible to further increase the film forming speed by increasing the input power. In addition, crystallization of the thin film is promoted in spite of an increase in the film forming rate, and a high-quality thin film can be formed at a film forming rate higher than that in the related art.

[0009]

As described above, although the deposition rate is increased by defining the plasma generation chamber and the deposition processing chamber, it is desired to further improve the deposition rate. In particular, high-speed deposition of a microcrystalline thin film is strongly desired for use in solar cells and the like. Further, it is also desired to increase the area that can be processed at a time. Therefore, an object of the present invention is to provide a surface treatment apparatus capable of treating a large area at a high speed and with high quality at a time in order to achieve such a demand.

[0010]

As described above, in a surface treatment apparatus in which the inside of a casing is divided into two chambers, a plasma generation chamber and a substrate processing chamber, as shown in FIG.
It has been found that the speed and quality of the surface treatment are improved as compared with the parallel plate type surface treatment apparatus 21 shown in FIG.

The present inventors have studied to further improve the surface treatment apparatus defined in the two chambers. As a result, the partition plate 6 'defining the two chambers as shown in FIG. It has been found that when the size of the plasma outlet 7 'is within a predetermined range, the surface treatment speed and its quality are further improved. The reason is that when the size of the plasma outlet 7 'is within the predetermined range, a hollow cathode glow discharge or a hollow anode glow discharge is generated at the outlet, thereby promoting the plasma of the raw material gas. It is speculated that this is because the number of active species further increases.

In order to form a film on a large area at a time,
As shown in FIG. 11, a plasma outlet 7 "is provided on a partition plate 6".
Was formed, and depending on the plasma processing conditions such as the magnitude of the input power, the thickness and quality could become uneven.

Therefore, the present inventors conducted further studies, and
The present invention provides a surface treatment apparatus capable of forming a film with a substantially uniform thickness and quality under any plasma treatment conditions.

According to the first aspect of the present invention, the source gas is turned into plasma by the plasma generating means in a casing provided with a plasma generating means, a raw material gas inlet, and a substrate support. A surface treatment apparatus for performing plasma treatment on a surface of a mounted substrate, wherein the casing has a partition plate in two chambers, a plasma generation chamber including the plasma generation unit and a substrate processing chamber including the substrate support. The partition plate is formed with one or more plasma outlets, and the plasma outlet has a long, substantially continuous slit shape which can be drawn with one stroke.

[0015] The substantially continuous slit shape means that plasma by hollow discharge is generated at the plasma outlet as described later, but this plasma can be continued without being divided at one plasma outlet. The shape refers to the slit shape. For example, when a rib is formed in the slit width direction of the plasma outlet, the size and width of the rib in the thickness direction of the partition plate are sufficiently small,
If the plasma can continue without breaking at the slit-shaped plasma outlet over the rib, it is assumed that the plasma outlet is substantially continuous.

The plasma generating means includes a discharge by a pair of plasma generating electrodes including a cathode and an anode, a discharge having three or more electrodes, a microwave discharge,
Capacitively coupled discharge, inductively coupled discharge, helicon wave discharge, P
Means such as IG discharge and electron beam excited discharge can be adopted.

To perform the surface treatment by the above-mentioned surface treatment apparatus, a raw material gas and a carrier gas are injected into a casing through a gas supply pipe, and plasma is generated in a plasma generation chamber by a plasma generation means. At this time, since the chamber pressure of the substrate processing chamber is adjusted to be lower than that of the plasma generation chamber, the plasma in the plasma generation chamber blows out from the plasma outlet into the substrate processing chamber. After the plasma is blown out from the plasma outlet, a source gas and a carrier gas may be further injected. The activated source gas in the plasma reaches the substrate surface in the processing chamber by the flow of the plasma, and the substrate is subjected to a surface treatment such as etching or film formation.

In the present invention, the plasma outlet is formed into a long, substantially continuous slit shape which can be drawn with one stroke, so that plasma is generated at the plasma outlet by hollow discharge. This hollow discharge becomes a hollow cathode glow discharge or a hollow anode glow discharge depending on the potential of the plasma outlet.

Since the plasma is newly generated at the plasma outlet by the hollow discharge, the density of the plasma guided to the substrate processing chamber is increased. Furthermore,
When the plasma generated in the plasma generation chamber passes through the plasma outlet where the hollow discharge is generated, the energy of charged particles (electrons or ions) in the plasma is reduced due to interaction due to collision or the like. Due to the decrease in the energy of the electrons, the electrons are sufficient to generate neutral active species that contribute to the surface treatment from the raw material gas, and the ions that cause damage by colliding with the substrate surface are less likely to be generated. Since the energy is strong, the number of neutral active species can be increased without increasing the number of ions. Also, by reducing the number of high energy ions in the plasma, the effect of these ions on substrate damage can be reduced.

As described above, the hollow discharge increases the plasma density and increases the number of neutral active species contributing to the surface treatment, thereby increasing the speed of the surface treatment. In addition, by lowering the energy of ions present in the plasma that collide with and damage the substrate, deterioration of the substrate surface can be suppressed, and high-quality surface treatment can be performed at high speed.

Further, the plasma outlet is in the form of a long slit, that is, the plasma outlet is opened over a wider area than when a single outlet is provided at the center of the partition plate as in the prior art. Therefore, it is possible to perform a surface treatment over a wide range of the substrate in one process.

As the substrate, glass, an organic film,
Alternatively, a metal such as SUS can be used. Furthermore, the surface treatment apparatus of the present invention can be used for various surface treatments such as film formation, ashing, and etching.However, when forming a silicon thin film or an oxide film such as amorphous silicon or even crystalline silicon on the substrate surface, Particularly preferably used.

The source gas inlet may be opened in the plasma generation chamber, or only a carrier gas is introduced into the plasma generation chamber, and the source gas inlet is opened on a side surface of the plasma outlet. It can also be done. Further, using, for example, an introduction means such as a pipe for introducing a source gas, the source gas introduction port is opened in the substrate processing chamber, and the source gas is introduced between the plasma outlet and the substrate in the substrate processing chamber. You may. When the source gas inlet is opened at the outlet or in the substrate processing chamber, the source gas is turned into plasma by a carrier gas that is turned into plasma and passes through the outlet. In this case, the inner wall surface of the plasma generation chamber is not contaminated by the source gas.

When a pair of plasma generating electrodes are used as the plasma generating means, it is possible to connect a DC power supply or a high frequency power supply to these electrodes to apply DC to high frequency power. Preferably, high frequency power is applied. Further, a bias may be applied to each electrode by a DC or AC power supply.

Examples of the plasma outlet include a spiral shape, a meandering shape, and a shape obtained by connecting straight lines, as in the invention according to claims 2 to 4 of the present application. Further, according to the invention of claim 5, the plasma outlet is formed symmetrically with respect to the center of the partition plate. By forming in this manner, it becomes possible to perform a surface treatment more evenly on the substrate.

According to the sixth aspect of the present invention, in order to effectively generate a hollow discharge by the plasma outlet and efficiently discharge the plasma from the outlet, the slit width of the plasma outlet can be reduced. W is W ≦ 5L
(e) or a range satisfying either W ≦ 20X. However, L (e) is the atom having the smallest diameter or the molecular species (active species) among the raw gas species and the electrically neutral atoms and molecular species (active species) decomposed and generated therefrom under the desired plasma generation conditions. X) is the thickness of the sheath layer generated under the desired plasma generation conditions.

The mean free path of electrons in the scattering of electrons and gas molecules (including atoms) depends on the gas pressure, the scattering cross section of atoms and molecules, and the temperature. Gas pressure, atom / molecule scattering cross section,
And temperature.

In the invention according to claim 7, the slit width of the plasma outlet is changed from the center of the partition plate to the outer periphery. Further, in the invention according to claim 8, the thickness of the partition plate is changed from the center to the outer periphery.

In the above-mentioned surface treatment apparatus, when a pair of plasma generating electrodes is employed as the plasma generating means, the density of the hollow discharge plasma generated at the plasma outlet is controlled by the frequency of the high frequency power applied to the electrodes. It may differ depending on the distance from the center of the plate. In such a case, as described above, the slit width is reduced, for example, in a portion where hollow discharge is likely to occur,
Alternatively, by increasing the thickness of the partition plate, and conversely, increasing the slit width in a portion where hollow discharge is unlikely to occur, or reducing the thickness of the slit width or the thickness of the partition plate so as to reduce the thickness of the partition plate, the partition plate Can be controlled from the center to the outer periphery so that plasma is generated at a uniform density over the entire length of the plasma outlet. Thereby, the surface treatment is uniformly performed over the entire surface of the substrate.

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the drawings and preferred embodiments. In the following description, the electrode to which the main power for discharging is applied is a cathode electrode, and the electrode facing the cathode electrode is an anode electrode.

FIG. 1 is a schematic view of a surface treatment apparatus 1 according to a preferred embodiment of the present invention. The apparatus 1 is isolated from the outside air, and a grounded casing 2 is defined in two chambers, a plasma generation chamber 3 and a substrate processing chamber 4.

In the plasma generating chamber 3, a pair of plasma generating electrodes 5, 6 are vertically arranged in parallel. The upper electrode (cathode electrode) 5 of the pair of electrodes 5 and 6 connected to the high frequency power supply P is an upper wall 2a of the casing 2.
The lower electrode (anode electrode) 6, which is grounded, defines the plasma generation chamber 3 and the substrate processing chamber 4. The anode electrode 6 is connected to the grounded casing 2.
Although it is directly attached to the upper wall 2a, it is not limited to this, and it can be attached to any position of the casing 2.

The cathode electrode 5 has a hollow cylindrical shape.
A gas supply pipe 8 penetrates the upper wall portion 5a, and a raw material gas such as monosilane is supplied from the gas supply pipe 8 to the hollow inside of the cathode electrode 5 for example in the case of a film forming process. In addition, a mixed gas with a carrier gas for promoting the generation of plasma and stabilizing the plasma and transporting the source gas to the substrate S is introduced. A plurality of gas supply holes 5c are provided in the lower wall portion 5b of the cathode electrode 5, which is a portion facing the anode electrode 6, in order to supply the raw material gas introduced into the hollow interior into the plasma generation chamber 3. Is formed. As described above, once the mixed gas is stored in the hollow interior of the cathode electrode 5, the mixed gas is introduced into the plasma generation chamber 3 in a shower form from the gas supply holes 5c, so that the mixed gas has a uniform concentration and uniformity. The pressure can be introduced into the plasma generation chamber 3.

It is to be noted that only a carrier gas is introduced into the hollow interior of the cathode electrode 5, and a different introduction port is separately provided for the source gas to enter the inside of the plasma generation chamber 3 or the film formation processing chamber 4. It can also be introduced inside.

At the center of the anode electrode 6, a slit-shaped plasma outlet 7 having a spiral upper surface as shown in FIG. 2 is formed. The substrate processing chamber 4 is communicated with. In addition, a partition plate for defining the plasma generation chamber 3 and the substrate processing chamber 4 may be provided separately from the anode electrode 6, and a plasma outlet may be formed in the partition plate.

In the present embodiment, it is important that the plasma outlet 7 has a spiral shape, that is, a long, substantially continuous slit shape that can be drawn with one stroke. Further, the slit width W of the plasma outlet 7 is uniform in the longitudinal direction, and the interval L between the spirals is equal to the slit width W.
Is the same as The slit width W is W ≦ 5.
It is preferable to set a range satisfying either L (e) or W ≦ 20X, and it is preferable to set the opening width W in a range of X / 5 ≦ W. Here, L (e) is the atom or molecular species having the smallest diameter among the raw gas species and the electrically neutral atoms and molecular species (active species) decomposed and generated therefrom under the desired plasma generation conditions. (Active species)
And X is the thickness of the sheath layer generated under the desired plasma generation conditions.

A substrate support 9 is disposed in the substrate treatment chamber 4 at a position facing the plasma outlet 7. In this embodiment, since the substrate support 9 is grounded, the substrate S placed on the support 9 is also grounded. Note that it is possible to apply a DC or AC bias without grounding the substrate support table 9 or to apply a bias in a pulsed manner. The substrate support 9 has a built-in heater.
Is adjusted to a temperature suitable for vapor phase growth. Note that the substrate processing chamber 4 is adjusted to a lower chamber pressure than the plasma generation chamber 3 by a valve, a pressure adjusting valve, and a vacuum pump (not shown).

When a film forming process is performed by the surface treatment apparatus 1, a raw material gas and a carrier gas are injected into a casing through a gas supply pipe, and high frequency power is supplied to the cathode electrode 5 by a high frequency power supply P. 5,6
During the period, that is, in the plasma generation chamber 3, plasma is generated. The plasma contains active species and ions generated from the source gas and the carrier gas. Since the chamber pressure of the substrate processing chamber 4 is adjusted to be lower than that of the plasma generating chamber 3, plasma in the plasma generating chamber 3 is blown out from the plasma outlet 7 into the substrate processing chamber 4. The activated species and ions reach the surface of the substrate S in the processing chamber 4 by the blown plasma, and a thin film is formed on the surface of the substrate S.

Further, in this embodiment, a hollow anode glow discharge is induced in the spiral plasma outlet 7. Regarding the induction of plasma inside the long, substantially continuous spiral plasma outlet 7 which can be drawn with a single stroke, a hollow anode glow discharge is induced at an arbitrary position inside the plasma outlet 7, and a chain is generated. It is considered that the hollow anode glow discharge is propagated throughout the inside of the outlet 7.

Since a hollow anode glow discharge is induced in the plasma outlet 7, the density of plasma guided to the substrate processing chamber 4 is increased. Further, in the present embodiment, by spiraling the plasma outlet 7, the plasma outlet 7 is formed substantially over a wide area of the anode electrode 6, and the plasma outlet 7 is formed. Since plasma is blown out from the entire length of the substrate 7, substantially uniform surface treatment can be performed over a wide range of the substrate S.

In this embodiment, the slit width W of the plasma outlet 7 is set to X / 5 ≦ W ≦ 5L (e) or X /
Since it is set in a range satisfying any one of 5 ≦ W ≦ 20X, generation of hollow anode glow discharge at the plasma outlet 7 can be further promoted.

Further, when the plasma generated in the plasma generation chamber 3 passes through the plasma outlet 7, which is a region where hollow anode discharge occurs, the energy of the electrons in the plasma is sufficient to generate active species. Since the intensity is appropriately reduced to an intensity that is insufficient to generate ions, the plasma guided to the substrate processing chamber 4 further increases active species contributing to film formation, becomes high-density plasma, and Speed is significantly improved. Furthermore, when passing through the plasma outlet 7 in which the hollow anode glow discharge is induced, the ion energy in the plasma is also reduced, so that the plasma guided to the substrate processing chamber 4 collides with the substrate. There are few ions which cause damage and high quality film formation is possible.

The effects of the present invention will be described with reference to specific examples. Example 1 In the surface treatment apparatus 1 according to the above-described embodiment, the anode electrode 6 has a thickness of 7.0 mm and the spiral plasma outlet 7 formed on the anode electrode 6 has a slit width W of 8 mm. 0.0 mm, spiral spacing L
Was set to 8.0 mm, and the silicon thin film was formed. As a result, the obtained silicon film was crystalline even if the film forming speed was increased as compared with the conventional case. The slit width used in the above-described film forming process satisfies the condition for inducing a hollow discharge. "Comparative Example" Anode electrode 6 in the above surface treatment apparatus 1
Instead, a circular plasma outlet 7 'having a diameter of 50 mm is formed at the center as shown in FIG.
When a silicon thin film was formed in the same manner as in Example 1 using a surface treatment apparatus using a 0 mm anode electrode 6 ′, when the film forming rate was increased, the silicon thin film became amorphous. A crystalline silicon thin film could not be obtained. The orifice diameter used in the film forming process at this time does not satisfy the condition for inducing a hollow discharge.

[0044]

[Table 1]

In the above-described embodiment, the anode electrode 6 is grounded. However, a bias may be applied to the electrodes 5 and 6 by a DC or AC power supply or a pulse power supply, respectively. Further, in the above-described embodiment, the plasma generation chamber 3 and the substrate processing chamber 4 are defined by the anode electrode 6, but the partition plate having a plasma outlet is provided separately from the anode electrode 6 to generate the plasma. The chamber 3 and the substrate processing chamber 4 can be defined. In addition, when other surface treatments such as ashing and etching are performed by using the above-described surface treatment apparatus, the surface treatment can be performed at a lower temperature and at a higher speed than in the related art.

Hereinafter, preferred modifications of the plasma outlet, which is a feature of the present invention, will be described. The plasma outlet 11 shown in FIG. 3 also has a spiral upper surface in the same manner as the above-described plasma outlet 7, and has ribs 11a connecting slit widths at a plurality of locations.
By forming the ribs 11a at a plurality of positions in this way, even when the partition plate (anode electrode 6) on which the plasma outlet 11 is formed is a thin plate, for example, the form of the plasma outlet 11 is stabilized. Can hold. In forming such ribs 11a, it is important that the plasma outlets 11 are substantially continuous.
That is, it is important that the size of the rib 11a in the plate thickness direction is smaller than the plate thickness, or that the width of the rib 11a is reduced so that the plasma generated in the plasma outlet 11 is not divided. It is.

The plasma outlet 12 shown in FIG. 4 has a zigzag meandering top surface. This plasma outlet 1
2 is point-symmetric with respect to the center of the partition plate (anode electrode 6).

The plasma outlets 13 shown in FIG. 5 also have a zigzag meandering upper surface, and the plasma outlet 12 shown in FIG. 4 is divided at the center of the partition plate (anode electrode 6). is there. The two plasma outlets 13 are formed to be point-symmetric with respect to the center of the partition plate (anode electrode 6).

The plasma outlet 14 shown in FIG. 6 has a substantially U-shaped upper surface formed by connecting straight lines. Further, the open ends may be connected to form a rectangular shape, and the above-mentioned ribs may be connected so that the center portion does not drop.

The plasma outlet 15 shown in FIG. 7 has a spiral top surface, and its slit width W gradually increases from the slit width W1 near the center of the partition plate (anode electrode 6) to the outer slit width W2. It is formed so as to decrease. Here, when plasma is generated by applying power from a high-frequency power supply having a frequency of 13.56 MHz, for example, as in the surface treatment apparatus 1 shown in FIG. 1 and FIG. Slit width W
Is constant, the plasma arriving at the substrate S tends to be weaker at the central portion and stronger toward the outer peripheral portion. When the density of the plasma becomes non-uniform, the slit width W is gradually reduced from the vicinity of the center of the partition plate toward the outer periphery as shown in FIG. The density can be made uniform, a film can be formed at a high speed, and the film thickness and the film quality are constant. "Example 2" is a plasma outlet 15 shown in FIG.
The slit width W1 near the center of the partition plate is 8.0 mm,
The slit width W2 in the vicinity of the outer periphery is set to 6.0 mm, and the interval D between the spirals is set to 8.0 mm.
In the same manner as in Example 1, a silicon thin film was formed. As a result, a crystalline silicon thin film was obtained, and its film thickness distribution was more uniform than in Example 1.

[0051]

[Table 2]

The plasma outlet 16 shown in FIG.
The upper surface has a spiral shape and the slit width W is constant, but the slit depth D of the plasma outlet 16, that is, the thickness dimension of the partition plate (anode electrode 6) is gradually increased from the center toward the outer periphery. I have. By increasing the slit depth D from the vicinity of the center of the partition plate to the outer periphery as in the plasma outlet 16 shown in FIG. 8, the density of the plasma finally reaching the surface of the substrate S is made uniform. This makes it possible to form a film which is high-speed and has a uniform film thickness distribution and film quality.

In the plasma outlet 15 shown in FIG. 7, the slit width W is reduced from the center to the outer periphery of the anode electrode 6 where the outlet 15 is formed.
The plasma outlet shown in FIG. 8 increases the slit depth D from the center of the anode electrode 6 toward the outer periphery. This is because, as described above, when power is applied by a high frequency power supply having a frequency of 13.56 MHz to generate plasma, the density of plasma reaching the substrate S tends to be low at the central portion and increase toward the outer peripheral portion. It is to deal with.

However, when the frequency is, for example, about eight times, for example, about 100 MHz, the plasma density tends to decrease from the center to the outer periphery, contrary to the above tendency. In such a case, it is preferable to increase the slit width W of the plasma outlet from the center toward the outer periphery or decrease the slit depth D from the center toward the outer periphery. In any case, the slit width and the slit depth of the plasma outlet vary depending on various plasma generation conditions such as the frequency of applied power, chamber pressure, and temperature.
It is set appropriately in consideration of the density of the plasma reaching.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing a surface treatment apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a plan view of an anode electrode in the device.

FIG. 3 is a plan view of an anode electrode according to another embodiment of the present invention.

FIG. 4 is a plan view of an anode electrode according to still another embodiment of the present invention.

FIG. 5 is a plan view of an anode electrode according to still another embodiment of the present invention.

FIG. 6 is a plan view of an anode electrode according to another embodiment of the present invention;

FIG. 7 is a plan view of an anode electrode according to another embodiment of the present invention;

FIG. 8 is a plan view and a cross-sectional view of an anode electrode according to still another embodiment of the present invention.

FIG. 9 is a cross-sectional view schematically showing a conventional parallel plate type surface treatment apparatus.

FIG. 10 is a plan view of a conventional anode electrode.

FIG. 11 is a plan view of another conventional anode electrode.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Surface treatment apparatus 2 Casing 2a Upper wall 2b Insulator 3 Plasma generation chamber 4 Substrate processing chamber 5 Cathode electrode 5a Upper wall 5b Lower wall 5c Gas supply hole 6, 6 ', 6 "Anode electrode 7, 7', 7 "Plasma outlet 8 Gas supply pipe 9 Substrate support 11, 12, 13, 14, 15, 16 Plasma outlet 21 Surface treatment device 22 Casing 23, 24 Plasma generation electrode 25 Source gas introduction pipe 26 Heater S Substrate P High frequency power supply

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroyuki Mizukami 1200 Manda, Hiratsuka-shi, Kanagawa Prefecture Inside of Komatsu Seisakusho Research Headquarters (72) Inventor Toshihiro Tabuchi 1200 Manda, Hiratsuka-shi, Kanagawa Komatsu Seisakusho Research Headquarters F term (reference) 4K030 AA06 BA29 BB03 FA03 KA12 KA17 KA30 KA45 5F004 BA06 BA14 BA20 BD04 5F045 AA08 AA09 AA14 AB03 BB09 DP03 EH04 EH11 EH12 EH13

Claims (8)

[Claims] A plasma is generated by said plasma generating means into a source gas in a casing provided with a plasma generating means, a raw material gas inlet, and a substrate support, and is placed on said substrate support. A surface processing apparatus for performing plasma processing on the substrate surface, wherein the casing is defined by a partition plate in two chambers, a plasma generation chamber including the plasma generation unit and a substrate processing chamber including the substrate support. A surface treatment apparatus, wherein one or more plasma outlets are formed in the partition plate, and the plasma outlet has a substantially continuous long slit shape which can be drawn with one stroke. 2. The surface treatment apparatus according to claim 1, wherein the plasma outlet has a spiral shape. 3. The surface treatment apparatus according to claim 1, wherein the plasma outlet has a meandering shape. 4. The surface treatment apparatus according to claim 1, wherein the plasma outlet has a shape in which straight lines are connected. 5. The surface treatment apparatus according to claim 1, wherein the plasma outlet is formed symmetrically with respect to a center of the partition plate. 6. The slit width W of the plasma outlet is W
The surface treatment apparatus according to any one of claims 1 to 3, wherein the surface treatment apparatus is set in a range that satisfies either ≤ 5L (e) or W ≤ 20X. Here, L (e): under the desired plasma generation conditions, the source gas species and the electrically neutral atoms and molecular species (active species) decomposed and generated therefrom, the smallest diameter atom or molecular species (active species) Mean free path of electrons with respect to seed) X: thickness of sheath layer generated under desired plasma generation conditions 7. The surface treatment apparatus according to claim 1, wherein said plasma outlet has a slit width changed from a center to an outer periphery of said partition plate. 8. The surface treatment apparatus according to claim 1, wherein the thickness of the partition plate is changed from the center to the outer periphery.