JP2001228081A - APPARATUS AND METHOD FOR DISCRIMINATING CRYSTAL STRUCTURE OF Ta THIN FILM - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a means for measuring whether a Ta thin film having low resistance, is formed at a plurality of arbitrary places in the surface of a substrate for an extremely short time in a non-contact state, without damaging the Ta thin film formed on the substrate. SOLUTION: A light source 11 generating light, an optical fiber 12 for guiding light to a plurality of places on the Ta thin film formed on a substrate 1 to irradiate the Ta thin film and guiding the reflected lights from the Ta thin film, a shading shutter 14 permitting the reflected lights from a plurality of irradiation positions to pass while cutting off other reflected light, a spectral means 15 for diffracting the reflected lights into their intensities for each wavelength and a discrimination means 16, for discriminating whether α-Ta is formed in the Ta thin film on the basis of the intensities of the reflected lights at each wavelength are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ta (tantalum) film used for a wiring electrode of a liquid crystal display, and more particularly to a Ta (Ta) film.
It relates to the determination of the crystal structure of a thin film.

[0002]

2. Description of the Related Art A liquid crystal display device having characteristics of being thin and having low power consumption has attracted attention. MIM (Metal-Insulator-Metal, MIM) used for such a liquid crystal display device
Thin-film diode) element and TFT (Thin Film Tran)
As an electrode material of a driving wiring of a sistor (thin film transistor) element, a Ta thin film which can be anodized and has excellent chemical resistance and corrosion resistance is widely used. A Ta thin film formed using a normal sputtering technique is formed as a film called β-Ta having a square lattice structure, and its specific resistance is as high as 170 to 200 μΩ · cm. In recent years, demands for large screens, high definition, and high aperture ratio are increasing, and low resistance is an important factor.
a is undesirably required to be a Ta thin film having a low resistance. In response to this request, JP-A-3-293329, JP-A-5-48097 and JP-A-5-2
In the manufacturing process of laminating a Ta thin film on a Ta nitride thin film, Japanese Patent Application Laid-Open No. 89091 discloses a process of laminating an upper Ta thin film into α-phase to form α-Ta having a body-centered cubic structure and a specific resistance of 20 to 30 μΩ ·.
A technique for obtaining a Ta thin film having a low resistance by setting the thickness in cm is disclosed. Α-Ta, which is a Ta thin film having a low resistance formed by using this technique, is actually used as a wiring material.

[0003] In order to form α-Ta, delicate control of conditions is required, and α-Ta, which is a Ta thin film having a low resistance, is not formed due to slight fluctuations in sputtering conditions and failure of some apparatus. There are cases. Therefore, it is necessary to confirm that a Ta thin film having a low resistance has been formed. Α- which is a Ta thin film having low resistance
As a method of determining whether or not Ta has been formed, there is a method of directly observing the crystal structure by X-ray diffraction or indirectly determining the specific resistance of the film. At the production site, for simplicity, the sheet resistance of the film is measured, the specific resistance is calculated from the sheet resistance value and the film thickness, and it is determined whether α-Ta has been formed. Sheet resistance is measured using a four-probe method. In the four probe method, it is necessary to directly contact a metal measuring needle with the film surface.

[0004]

In the four-probe method, since the measuring needle directly contacts the film surface, there is a problem that the film is damaged. Damage to the film causes product defects such as disconnection. At actual production sites, it is not possible to measure 100% of all products that are Ta film formed on a substrate. There is a problem that can only be measured with Even if the total sheet resistance is measured, the measurement location is limited to a very limited location where the damage of the film on the product quality is not a problem, so that the resistance distribution in the substrate plane cannot be confirmed.

[0005] An object of the present invention is to provide a Ta-based semiconductor device formed on a substrate.
An object of the present invention is to provide a means for measuring whether or not a Ta thin film having a low resistance has been formed at an arbitrary plurality of locations on a substrate surface in a non-contact and extremely short time without damaging the thin film.

[0006]

According to the present invention, there is provided a light source for generating light, and a light from the light source is irradiated to a Ta thin film of a film-formed product having a Ta thin film formed on a substrate, and reflected light of the Ta thin film. For analyzing the crystal structure of the Ta thin film by utilizing the characteristic that the crystal structure of the Ta thin film corresponds to the intensity of the reflected light upon receiving the reflected light guided by the optical transmission means. And a analyzing means for the Ta thin film crystal structure.

According to the present invention, the crystal structure of a Ta thin film is determined by using the reflection intensity that can be measured without contacting the film surface, so that the Ta film can be extracted at a production site without damaging the film. It is possible to perform in-line 100% inspection of film-formed products without any problems, and contribute to improvement of product yield and stable management of product quality.

In the present invention, the light transmitting means may include a plurality of light irradiating devices arranged at different irradiation positions, one end of which is desired by the light source, and the other end of which is spaced from the Ta thin film of the film-formed product. An optical fiber and a plurality of optical fibers provided corresponding to the light irradiation optical fiber, one end of which is desired by the analysis means, and the other end of which is desired by the Ta thin film in proximity to the other end of the light irradiation optical fiber. An optical fiber comprising a reflected light optical fiber, and passing the reflected light from one irradiation position selected from among the reflected lights from the plurality of irradiation positions received by the optical fiber,
And a light-blocking shutter that blocks other portions.

According to the present invention, the measurement can be performed in a shorter time by using an optical fiber that receives reflected light from a plurality of locations.
As a result, it can greatly contribute to reduction of product cost.

In the present invention, the analyzing means preferably includes a spectroscopic means for decomposing the reflected light received from the Ta thin film into reflected light intensities for each wavelength, and a spectroscopic means for decomposing the reflected light for each wavelength decomposed by the spectroscopic means. Determining means for determining the type of crystal structure of the Ta thin film based on the strength.

According to the present invention, by analyzing the crystal structure of the Ta thin film based on the intensity of the reflected light for each wavelength, the crystal structure of the Ta thin film can be determined more reliably, thereby improving the product yield. It can greatly contribute to stable management of product quality.

Also, in the present invention, the discriminating means preferably has a wavelength of 40.
Α-Ta at a predetermined wavelength in the range of 0 to 700 nm
By utilizing the difference in the intensity of the reflected light between the Ta thin film on which Ta is formed and the Ta thin film on which Ta having another crystal structure is formed, T
It is characterized in that it is determined whether or not the type of the crystal structure of the thin film a is a body-centered cubic α-Ta structure.

According to the present invention, it is possible to more reliably determine whether or not an α-Ta thin film has been formed, and it is possible to more easily and accurately determine the occurrence of a film formation defect.

In the present invention, the analyzing means may be configured to determine the thickness of the Ta thin film based on the type of the crystal structure of the Ta thin film determined at a plurality of positions on the surface of the Ta thin film formed on the substrate by the determining means. It is characterized by including distribution acquisition means for analyzing the crystal structure distribution on the surface.

According to the present invention, by determining the crystal structure distribution in the substrate plane, it is possible to easily determine, for example, a place where α-Ta having low resistance is difficult to be formed in the substrate plane,
Since it can contribute to the improvement of the film forming process, it can greatly contribute to the improvement of the non-defective product rate and the production efficiency, and further to the reduction of the product cost.

Further, according to the present invention, in the film forming apparatus for producing a film-formed product in which a Ta thin film is formed on a substrate, the optical transmission means is provided at an outlet portion from which the substrate after film formation is taken out. It is characterized by that.

According to the present invention, the crystal structure of the Ta thin film on the formed substrate can be determined immediately after the film formation, so that the occurrence of a film formation defect can be found immediately after the film formation. It is possible to minimize the damage caused by the occurrence of defects.

The present invention comprises a step of irradiating light from a light source toward a Ta thin film formed on a substrate to receive reflected light, and a method of forming a crystal of the Ta thin film based on the intensity of the received reflected light. Analyzing the structure of the Ta thin film.

According to the present invention, the crystal structure of the Ta thin film is analyzed based on the intensity of the reflected light from the Ta thin film, whereby the crystal of the Ta thin film is formed on all the substrates formed without damaging the formed substrate. The determination of the structure can be performed, which can greatly contribute to improvement in product yield and stable management of product quality.

Further, in the present invention, the analyzing step includes:
Decomposing the reflected light received from the Ta thin film into reflected light intensities for each wavelength; and determining the type of crystal structure of the Ta thin film based on the decomposed reflected light intensity for each wavelength. It is characterized by.

According to the present invention, by analyzing the crystal structure of the Ta thin film based on the intensity of the reflected light for each wavelength, the crystal structure of the Ta thin film can be determined more reliably, thereby improving the product yield. It can greatly contribute to stable management of product quality.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a Ta thin film crystal structure discriminating apparatus according to an embodiment of the present invention will be described below in detail with reference to the drawings. The Ta thin film crystal structure discriminating apparatus of the present invention provides a specific resistance and a reflection according to the crystal structure of each Ta thin film of α-Ta, β-Ta, and α + β phase Ta, which is a Ta thin film in which α phase and β phase are mixed. Utilizes the characteristic that the rates are different. By utilizing this characteristic, TaN
The crystal structure of each Ta thin film can be determined by examining the reflection intensity of the Ta thin film on the surface of a film formed by sequentially laminating the thin film and the Ta thin film. Details of the characteristics used in the Ta thin film crystal structure discriminating apparatus of the present invention will be described later.

FIG. 1 shows an embodiment of the present invention, Ta.
1 is a configuration diagram illustrating a schematic configuration of a thin-film crystal structure determination device.
The Ta thin film crystal structure determining apparatus includes a light source 11, an optical fiber 12, a light-shielding shutter, a spectroscope 15, a computer 16, an optical fiber 17, and an optical fiber 18.

The light source 11 has a wavelength of 400 nm to 7 in the visible light range.
A halogen lamp or the like that can emit light having a wavelength of 00 nm is used. The light source 11 is not limited to a light source that can emit visible light, as long as it can emit light having a certain wavelength range including a wavelength used for discrimination by the computer 16 described later. For optical components such as the spectroscope 15, components capable of covering the wavelength range are used.

The optical fiber 12 guides light from the light source 11 onto the film-formed product 5 and receives reflected light from the film-formed product 5. The light-shielding shutter 14 is provided between the film forming product 5 and the optical fiber 12.
The reflected light other than one selected from the plurality of reflected lights guided by the above is blocked. The spectroscope 15 decomposes the reflected light passed through without being blocked by the light shielding shutter 14 into light intensities for each wavelength. The computer 16 analyzes the light intensity for each wavelength decomposed by the spectroscope 15 to determine the crystal structure.

FIG. 2 is a configuration diagram for explaining in detail the configuration of the optical fiber 12 shown in FIG. Optical fiber 12
Is an optical fiber end 21 that guides light from the light source 11 onto the film-formed product 5, and guides light from the light source 11 to a measurement point A on the film-formed product 5 and reflects reflected light from the measurement point A into the spectroscope 15. And the light from the light source 11 at the measurement point B on the film-formed product 5
And an optical fiber end 24 for guiding the reflected light from the measurement point B to the spectroscope 15 and an optical fiber end 24 for guiding the reflected light from the measurement points A and B to the spectroscope 15.

Optical fiber end 21 includes two optical fiber ends 21a and 21b. The optical fiber ends 21a and 21b guide the light from the light source 11 to the measurement points A and B, respectively. The optical fiber ends 22 are two optical fiber ends 2
2a and 22b. The optical fiber end 22a is the light source 1
This is an optical fiber end that guides light from No. 1 to the measurement point A on the film-formed product 5, and forms one optical fiber together with the above-mentioned optical fiber end 21a. The optical fiber end 22 b guides the reflected light from the measurement point A on the film-formed product 5 to the spectroscope 15.

Optical fiber end 23 includes two optical fiber ends 23a and 23b. The optical fiber end 23a is an optical fiber end that guides light from the light source 11 to the measurement point A on the film-formed product 5, and constitutes one optical fiber together with the optical fiber end 21b. The optical fiber end 23 b guides the reflected light from the measurement point B on the film-formed product 5 to the spectroscope 15.

Optical fiber end 24 includes two optical fiber ends 24a and 24b. The optical fiber end 24a is an optical fiber end that guides the reflected light from the measurement point A on the film-formed product 5 to the spectroscope 15, and forms one optical fiber together with the optical fiber end 22b. Further, the optical fiber end 24b transmits the reflected light from the measurement point B on the film-formed product 5 to the spectroscope 1.
5 and constitutes one optical fiber together with the above-mentioned optical fiber end 23b.

FIG. 3 is a configuration diagram for explaining a schematic configuration of the light shielding shutter 14 shown in FIG. Light shielding shutter 1
Reference numeral 4 denotes a light-shielding shutter 14a and a light-shielding shutter 14b (not shown), which are provided between the end of the optical fiber end 24a or 24b shown in FIG. Since the light-blocking shutter 14a and the light-blocking shutter 14b have exactly the same configuration, FIG.
Only 4a is shown.

The light-shielding shutter 14a provided at the tip of the optical fiber end 24a opens or closes with its inner diameter changed coaxially, thereby passing or blocking the reflected light from the measurement point A on the film-formed product 5. To limit light reception. Another light-blocking shutter provided at the tip of the optical fiber end 24b is:
By the opening and closing, the reflected light from the measurement point B on the film-formed product 5 is passed or cut off, and the light reception is restricted. By closing one of the light-shielding shutters 14a and 14b and opening the other light-shielding shutter, only one of the reflected lights from the measurement points A and B on the film-formed product 5 is selected and transmitted to the spectroscope 15. It is possible to guide.

As described above, in the Ta thin film crystal structure discriminating apparatus according to one embodiment of the present invention, the optical fiber 12
Is shown as a configuration having two measurement points, but the number of measurement points is not limited to two, and may be one or three or more.
If the optical fiber 2 has an appropriate plurality of measurement points, the number of times the optical fiber 12 is moved on the film-formed product 5 is reduced,
It can be measured efficiently. The number of the light-shielding shutters 14 is attached corresponding to the measurement points of the optical fiber 12.

FIG. 4 is a flow chart for explaining the processing procedure of the crystal structure discrimination executed by the spectroscope 15 and the computer 16 shown in FIG. First, the spectroscope 15 selects one of the two reflected lights guided from the film-formed product 5 by the optical fiber 12 and passes the reflected light that is passed through without being blocked by the light-shielding shutter 14 (light intensity for each wavelength). (S1). The computer 16 acquires spectral data for each wavelength from the spectroscope 15 (S
2) From the spectrum data, calculate the reflectance with the Al thin film as a control. The discriminating condition is input to the computer 16 in advance, and Ta is calculated from the calculated reflectance in accordance with the discriminating condition.
The crystal structure of the thin film is determined (S3). The determined crystal structure is displayed on the screen of the computer 16 (S4).

FIG. 5 is a side view showing an example of installation of the Ta thin film crystal structure discriminating apparatus shown in FIG. 6A and 6B are a plan view and an enlarged plan view corresponding to the side view of FIG. 5, wherein FIG. 6A is a plan view and FIG. 6B is an enlarged plan view of a part shown in FIG. As shown in FIGS. 5 and 6, the unloading of the sputtering apparatus 36 is performed so that the sensor 30 in which the optical fiber 12 shown in FIG. It is provided above a gate valve 33 which is a lid that can open and close the chamber 34. Substrate transfer robot 31
Takes out one substrate after film formation from the unload chamber 34, places it on the robot hand 32, and moves it so that an arbitrary portion to be inspected on the film formation product 5 is located directly below the sensor 30. The angle of the robot hand 32 can be freely changed in the horizontal direction by the support 35. Thereby, the sensor 3
0 indicates that the intensity of the reflected light can be measured for any desired plural measurement points on the film-formed product 5. Based on the measured light intensity, the spectroscope 15 and the computer 16 of FIG. 1 were processed as shown in FIG. 4 to form a Ta thin film having a low-resistance α-Ta crystal structure. Is determined.

As described above, since the crystal structure of the Ta thin film on the formed substrate can be determined immediately after the film formation, it is possible to discover the occurrence of a film formation failure immediately after the film formation. It is possible to minimize the damage caused by the occurrence of defects.

In the computer 16, as described above,
The crystal structure distribution of the Ta thin film in the plane of the film-formed product 5 is analyzed based on the crystal structure of the Ta thin film determined at a plurality of measurement points on the film-formed product 5. The analyzed crystal structure distribution is calculated by computer 1
6 is displayed on the screen. According to the crystal structure distribution,
It is possible to determine a portion where α-Ta having a low resistance is difficult to be formed in the surface of a film-formed product, and it is also possible to find and improve defects at the time of film-forming.

The details of the characteristics used in the Ta thin film crystal structure discriminating apparatus of the present invention configured as described above will be described below.

First, α-Ta, β-Ta and α + β phase T
a) forming a Ta thin film having a low resistance by measuring the crystal structure, specific resistance and reflectance of each Ta thin film, and measuring the reflection intensity of the film surface from the correlation;
Α-Ta as a thin film, β as a Ta thin film having high resistance
It will be described that it is possible to determine any one of -Ta and α + β phase Ta.

FIG. 7 is a sectional view showing an example of a sectional structure of a film-formed product in which a TaN thin film and a Ta thin film are sequentially laminated on a substrate. The TaN thin film 2 as a first layer is formed on the transparent glass substrate 1 by using a sputtering film forming technique. As a sputtering film forming technique, a film is formed by reactive sputtering in a mixed atmosphere of Ar / N ₂ gas using a Ta target. The Ta thin film 3 as the second layer is formed by sputtering in an Ar gas atmosphere using a Ta target. By the above film forming method, the first layer TaN
A film product 5 having a thin film 4 in which a second layer Ta thin film 3 is formed on the thin film 2 is produced.

When the TaN thin film 2 as the first layer is formed in the formed film product 5, the Ar / N ₂ flow ratio, the pressure during sputtering, the heating temperature, the thickness of the TaN thin film 2, and the like are appropriately adjusted. If the conditions are not set, the Ta thin film 3 as the second layer to be subsequently formed on the TaN thin film 2 does not sufficiently turn into the α phase, and the β phase is mixed in the film, so that the resistance cannot be reduced. Second
When forming the layer, it is not necessary to set the film forming conditions as strictly as when forming the first layer, but it is necessary to optimize the sputtering pressure, the heating temperature, and the like in order to sufficiently form the Ta thin film 3 into the α phase.

Β-Ta, α-Ta or α + β phase T
In order to obtain a Ta thin film 3 composed of a, various film-forming products 5 were produced by changing the flow ratio of Ar / N ₂ during the first layer formation in the above-described film forming method. Specifically, the first
The N ₂ / Ar flow ratio at the time of layer formation was set to a plurality of different flow ratios in the range of 0% to 15%. Other film forming conditions are the same for the various film-formed products 5, and the film forming conditions for the first layer are as follows.
The film thickness is 500 °, the pressure during sputtering is about 0.4 Pa, the power applied to the target is 4 W / cm ^2, and the heating temperature is 1
It was set to 00 ° C. The conditions for forming the second layer are as follows:
(4) The pressure during sputtering was set to about 0.4 Pa, the power input to the target was set to 4 W / cm ^{2, the} heating temperature was set to 100 ° C., and only Ar gas was introduced. Under the above film forming conditions, the N ₂ / Ar flow rate ratio at the time of forming the first layer is 0%,
The film forming conditions of 3% and 12% are referred to as condition 1, condition 2 and condition 3.

FIG. 8 is a correlation diagram showing the relationship between the flow rate ratio of N ₂ / Ar when forming the first layer and the specific resistance of the Ta thin film of the second layer.

FIG. 9 shows N ₂ / Ar when different first layers are formed.
X of the Ta thin film of the second layer in the thin film formed at the flow ratio
X showing the result of X-ray diffraction (hereinafter abbreviated as “XRD”)
It is an RD spectrum figure. (A) to (c) show N ₂ / Ar
It is an XRD result of the thin film formed at gas flow ratios of 0%, 3% and 12%, respectively.

From the results of FIGS. 8 and 9, the specific resistance of the Ta thin film was 170 μΩc in the thin film formed under the condition 1.
m, the resistance did not decrease, and the XRD results indicate the presence of only β-Ta. In the thin film formed under the condition 2,
The specific resistance of the Ta thin film is 100 μΩcm, and the XRD result is α
This indicates that -Ta and β-Ta are present as a mixture. In the thin film formed under the condition 3, the Ta thin film has a specific resistance as low as about 25 μΩcm, and the XRD result indicates that only α-Ta exists.

FIG. 10 is a correlation diagram showing the relationship between the wavelength of light irradiated on the surface of the Ta thin film and the reflectivity of each thin film formed under the conditions 1 to 3. The reflectivity was measured using a microspectroscopic light OSP-SP100 manufactured by Olympus Corporation as a reflectometer, using an Al (aluminum) thin film as a control.
The reflectivity is 100% of the intensity of the reflected light on the Al thin film.
Is the ratio of the intensity of the reflected light on the surface of the Ta thin film.

From the results shown in FIG. 10, α-Ta (L1) and β
It can be seen that there is a significant difference between -Ta (L3) and α + β phase Ta (L2) in the correlation between the wavelength and the reflectance.

FIG. 11 shows the relationship between the wavelength shown in FIG.
FIG. 7 is a correlation diagram showing a relationship between the reflectance difference between the phase difference and β-Ta or α + β phase Ta. From the results of FIG.
In the visible light region in the range of 00 nm, the reflectance difference (L5) between α-Ta and β-Ta and the reflectance difference (L4) between α-Ta and α + β phase Ta are both maximum, and these reflectance differences are large. Is also the largest. Therefore, it can be seen that it is possible to most clearly determine which crystal structure of α-Ta, β-Ta, and α + β phase Ta in the reflectance at the wavelengths in the above range. More specifically, if the reflectance is 40% or more and 45% or less, T which is sufficiently α-phased
a It was judged that a thin film was obtained, and the reflectance R was 45% <R <5.
If it is 5%, α in which α-Ta and β-Ta are mixed
It is determined that it is possible to judge that the phase is + -phase Ta, and that if the reflectance is 55% or more, it is β-Ta.

Based on the above principle, the computer 1 shown in FIG.
At 6, conditions for determining the crystal structure of the Ta thin film in the film-formed product are set. That is, the reflectivity of light incident on the Ta thin film differs in the visible light region depending on the crystal structure of the Ta thin film, and exhibits characteristics as shown in FIG.

That is, in the reflectance at a wavelength in the range of 550 to 600 nm, it is possible to most clearly determine which crystal structure of α-Ta, β-Ta and α + β phase Ta. Specifically, when the reflectance R is 45% or less, it is determined that a Ta thin film having a sufficient α phase has been obtained.
If the reflectance R is 45% <R <55%, it is determined to be α + β phase Ta in which α-Ta and β-Ta are mixed, and if the reflectance is 55% or more, it is determined to be β-Ta. It is possible. Therefore, the following determination conditions were set using the reflectance R at a wavelength of 550 nm. In addition, the reflectance was set to the Al thin film as a control. (Determination conditions) Reflectivity R Determination crystal structure R ≦ 45% α-Ta 45% <R <55% α-Ta, β-Ta mixed 55% ≦ R β-Ta

[0050]

According to the present invention, by analyzing the crystal structure of the Ta thin film based on the intensity of the reflected light from the Ta thin film, the Ta thin film can be formed on all the substrates formed without damaging the formed substrate. Can be determined, and it is possible to contribute to improvement of product yield and stable management of product quality.

According to the present invention, the measurement can be performed in a shorter time by using the optical fiber that receives the reflected light from a plurality of places, so that the product non-defective rate and the production efficiency can be improved.
As a result, it can greatly contribute to reduction of product cost.

According to the present invention, by analyzing the crystal structure of the Ta thin film based on the intensity of the reflected light for each wavelength, the crystal structure of the Ta thin film can be determined more reliably, thereby improving the product yield. It can greatly contribute to stable management of product quality.

According to the present invention, it is possible to more reliably determine whether or not an α-Ta thin film has been formed, and it is possible to more easily and accurately determine the occurrence of a film formation defect.

According to the present invention, by determining the crystal structure distribution in the substrate plane, it is possible to easily determine, for example, places where α-Ta having low resistance is difficult to be formed in the substrate plane.
Since it can contribute to the improvement of the film forming process, it can greatly contribute to the improvement of the non-defective product rate and the production efficiency, and further to the reduction of the product cost.

According to the present invention, the crystal structure of the Ta thin film on the substrate on which the film is formed can be determined immediately after the film formation. It is possible to minimize the damage caused by the occurrence of defects.

According to the present invention, by analyzing the crystal structure of the Ta thin film based on the intensity of the reflected light from the Ta thin film, the crystal structure of the Ta thin film can be obtained for all substrates formed without damaging the formed substrate. The determination of the structure can be performed, which can greatly contribute to improvement in product yield and stable management of product quality.

According to the present invention, by analyzing the crystal structure of the Ta thin film based on the intensity of the reflected light for each wavelength, it is possible to more reliably determine the crystal structure of the Ta thin film, thereby improving the product yield. It can greatly contribute to stable management of product quality.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a schematic configuration of a Ta thin film crystal structure discrimination device according to an embodiment of the present invention.

FIG. 2 is a configuration diagram for describing a configuration of an optical fiber 12 shown in FIG. 1 in detail.

FIG. 3 is a configuration diagram for explaining a schematic configuration of a light shielding shutter 14 shown in FIG. 1;

FIG. 4 is a flowchart for explaining a processing procedure of crystal structure discrimination executed by the spectroscope 15 and the computer 16 shown in FIG.

FIG. 5 is a side view showing an installation example of the Ta thin film crystal structure discriminating apparatus shown in FIG.

6A and 6B are a plan view and an enlarged plan view corresponding to the side view of FIG. 5, wherein FIG. 6A is a plan view and FIG. 6B is a partially enlarged plan view shown in FIG.

FIG. 7 is a cross-sectional view showing an example of a cross-sectional structure of a film-formed product in which a TaN thin film and a Ta thin film are sequentially laminated on a substrate.

FIG. 8 shows the N ₂ / Ar flow rate ratio when forming the first layer and the T of the second layer.
FIG. 4 is a correlation diagram showing a relationship with the specific resistance of a thin film.

FIG. 9 is an XRD spectrum diagram showing an X-ray diffraction result of a Ta thin film of a second layer in a thin film formed at a different N ₂ / Ar flow rate when forming a first layer.

FIG. 10 shows Ta in each thin film formed under conditions 1 to 3.
It is a correlation diagram which shows the relationship between the wavelength of the irradiation light to a thin film surface, and its reflectance.

11 is a correlation diagram showing the relationship between the wavelength shown in FIG. 10 and the reflectance difference between α-Ta and β-Ta or α + β phase Ta.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 5 Film-forming article 11 Light source 12, 17, 18 Optical fiber 14 Light-shielding shutter 15 Spectroscope 16 Computer

Claims (8)

[Claims] A light source for generating light; a light transmitting means for irradiating light from the light source to a Ta thin film of a film-formed product having a Ta thin film formed on a substrate, and guiding reflected light; And analyzing means for analyzing the crystal structure of the Ta thin film by utilizing the characteristic that the crystal structure of the Ta thin film corresponds to the intensity of the reflected light upon receiving the reflected light guided by the optical transmission means. Characteristic device for determining the crystal structure of a Ta thin film. 2. The optical transmission means includes a plurality of optical fibers for light irradiation arranged at different irradiation positions, one end of which is desired by the light source, and the other end of which is spaced from a Ta thin film of a film-formed product. A plurality of reflected light which are provided corresponding to the light irradiating optical fiber, one end of which is desired by the analysis means, and the other end of which is a Ta thin film in close proximity to the other end of the light irradiating optical fiber. An optical fiber comprising an optical fiber, and a light-blocking shutter that transmits reflected light from one of the irradiation positions selected from the plurality of irradiation positions received by the optical fiber and blocks the other light. 2. The Ta thin-film crystal structure discriminating apparatus according to claim 1, further comprising: 3. The spectroscopic means for decomposing reflected light received from the Ta thin film into the intensity of reflected light for each wavelength, and the analyzing means based on the intensity of reflected light for each wavelength decomposed by the spectroscopic means. 2. The Ta thin film crystal structure discriminating apparatus according to claim 1, further comprising discriminating means for discriminating the type of the crystal structure of the Ta thin film. 4. The method according to claim 1, wherein the determining means includes a wavelength of 400 to 700 n.
At a predetermined wavelength in the range of m, a Ta thin film on which α-Ta is formed and a Ta film on which Ta of other crystal structure is formed
4. The method according to claim 3, wherein the difference in the intensity of the reflected light from the thin film is used to determine whether the type of crystal structure of the Ta thin film is a body-centered cubic α-Ta. Ta thin film crystal structure discriminating apparatus. 5. The method according to claim 1, wherein said analyzing means determines a crystal structure of the Ta thin film on the surface of the film on the basis of the type of the crystal structure of the Ta thin film determined at a plurality of locations on the surface of the film on which the Ta thin film is formed on the substrate. 4. The Ta thin film crystal structure discriminating apparatus according to claim 3, further comprising a distribution acquisition unit for analyzing a crystal structure distribution. 6. The film forming apparatus according to claim 1, wherein the light transmitting means is provided at an outlet from which the substrate on which the film has been formed is taken out. The apparatus for determining a crystal structure of a Ta thin film according to claim 1, wherein: 7. Light from a light source is transferred to a Ta formed on a substrate.
A method for determining a crystal structure of a Ta thin film, comprising: irradiating a thin film and receiving reflected light; and analyzing a crystal structure of the Ta thin film based on the intensity of the received reflected light. . 8. The analyzing step includes: decomposing the reflected light received from the Ta thin film into reflected light intensities for each wavelength; and crystallizing the Ta thin film based on the decomposed reflected light intensities for each wavelength. 10. The method for judging the crystal structure of a Ta thin film according to claim 9, comprising a step of judging a type of the structure.