JP2001226768A - Sputtering system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a sputtering system by which uniform sputtering can be applied to the surface of a wafer to be subjected to film deposition by uniformizing the distribution of gas for electric discharge supplied between a target and the wafer and capable of carrying out film deposition of uniform film thickness. SOLUTION: In a sputtering system 1A, the whole surface of a target Ta is provided with a plurality of gas-feeding holes 54 penetrating in the thickness direction of the target. A gas-distributing channel 53 is formed in the bottom of a target-cooling disc 6111 constituting a cathode part 6110, and the above target Ta is attached to the bottom of this channel. Gas for electric discharge is supplied in a state of uniform gas concentration distribution from the gas- distributing channel 53 and the gas-feeding holes 54 of the target Ta to the region between the target Ta and a wafer W to be subjected to film deposition and is formed into plasma, by which a thin film of uniform film thickness can be deposited on the surface of the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to a sputtering apparatus capable of forming a thin film having a substantially uniform thickness on a surface of a substrate on which a film is to be formed by sputtering.

[0002]

2. Description of the Related Art First, a conventional sputtering apparatus will be described with reference to FIGS. FIG. 4 is a cross-sectional view of the structure of a conventional sputtering apparatus provided with a general discharge gas supply apparatus, FIG. 5 is a cross-sectional view of the structure of a plasma generator incorporated in the sputtering apparatus shown in FIG. 4, and FIG. FIG. 7 is a cross-sectional view of a configuration of a sputtering apparatus provided with another discharge gas supply device.

The sputtering apparatus shown in FIGS. 4 and 5 is a so-called magnetron sputtering apparatus.
Hereinafter, a sputtering apparatus provided with a conventional general discharge gas supply apparatus using this magnetron sputtering apparatus will be described. The sputtering apparatus 1B shown here is provided with a vacuum chamber 2, a gas supply apparatus 3 for supplying a discharge gas for generating plasma in the vacuum chamber 2, and a gas supply apparatus 3 provided in the vacuum chamber 2. A support base 4120 on which the film formation substrate W can be mounted, and a support base 412 made of a film forming material;
A flat plate-shaped target T having a diameter larger than the outer diameter of the film-forming substrate W, disposed in parallel with a predetermined interval with respect to the film-forming substrate W mounted on the substrate 0; The plasma generating apparatus 4 is configured to generate plasma between the target T and the support 4120 in the vacuum chamber 2.

The vacuum chamber 2 is formed in a cylindrical shape.
An opening 21 is formed on the upper side, an exhaust port 22 is formed in a part of the periphery of the bottom surface, and a gas inlet 23 is formed on the side wall surface. A member constituting the cathode is mounted.
The exhaust port 22 is connected to a vacuum pump (not shown), and the gas inlet 23 is connected to the gas supply device 3.

The gas supply device 3 is not shown, for example,
A gas supply pipe 31 connected to a discharge gas source having a high ionization rate such as Ar, Ar, and Xe; and a gas flow control valve 32 mounted at an intermediate portion of the gas supply pipe 31. The gas supply pipe 31 is piped from the gas inlet 23 of the vacuum chamber 2 to surround an outer peripheral surface of a later-described anti-adhesion plate 4114 in the vacuum chamber 2,
A gas supply port 3110 at the tip thereof is disposed facing an intermediate portion between the target T mounted on the lower surface of the target cooling board 4111 and the upper surface of the support base 4120 and the fixed substrate W to be formed. And a discharge gas is supplied between them. In addition, by adjusting the degree of opening of the gas flow control valve 32, the flow rate of the discharge gas to the vacuum chamber 2 can be adjusted.

[0006] The plasma generating device 4 is composed of an electric field generating device 41 and a magnetic field generating device 42. The electric field generating device 41 is further configured to close the opening 21 of the vacuum chamber 2. It comprises a cathode section 4110, the support 4120 at a ground potential, and a DC power supply 4130. Further, the cathode portion 4110 includes a target cooling plate 4111 in the form of a hollow disk having an outer diameter slightly larger than the diameter of the opening 21 and a cooling water supply pipe / electrode 4112 connected to the center of the upper surface. The target cooling plate 4111 has a structure in which the target T can be mounted and fixed on the lower surface thereof. Then, a cooling water from a cooling water source (not shown) is flowed at a constant flow rate from the cooling water supply pipe / electrode 4112 into the target cooling board 4111, and the target T, which receives the kinetic energy of ions during sputtering and rises in temperature, At all times
It is configured to be able to cool.

The support table 4120 is fixed to the bottom inside the vacuum chamber 2, and a substrate W such as a digital video disk or a semiconductor wafer is placed and fixed on the support 4120. The support 4120 is made of a good electric conductor, and is electrically connected to the vacuum chamber 2.

A negative electrode of a DC power supply 4130 is connected to the cooling water supply pipe / electrode 4112, and a high voltage, for example, 400
A voltage of about V to 500 V is applied to the target cooling board 4111, while the support 4120 is connected to the ground potential via the vacuum chamber 2.

Therefore, as shown in FIG. 5, by applying the voltage between the target cooling platen 4111 and the support 4120, the target cooling platen 4111 serving as a cathode is applied.
Generates electrons, and an electric field is generated.

The magnetic field generator 42 is provided on the upper surface of the target cooling board 4111 with an S-pole magnet 4210 and an N-pole magnet 4220 formed in a double ring around the cooling water supply pipe / electrode 4112. As shown in FIG. 5, a magnetic field is generated in a state intersecting the electric field generated by the electric field generator 41, and is generated from the target cooling board 4111 toward the support table 4120. The electron is restrained and trochoidal motion is performed. The movement of the electrons promotes ionization of the discharge gas, and the ionization rate is significantly increased.

In the sputtering apparatus 1B, reference numeral 4113 denotes a shield plate,
Is mounted around the lower surface of the target cooling plate 4111 in the opening 21 so as to sufficiently surround the periphery of the opening 21 to prevent discharge between the cathode portion 4110 and a zero potential portion in the vacuum chamber 2. Things. In addition, a deposition-preventing plate 4114 having a diameter slightly smaller than the diameter of the shield plate and covering a portion other than the surface of the film-forming substrate W is mounted in the vacuum chamber 2. It is a member that has a function of preventing adhesion.

Next, the film forming operation of the sputtering apparatus 1B configured as described above will be described. First, a substrate W on which a film is to be formed is mounted and fixed on the upper surface of the support 4120, and a target T is mounted and fixed on the lower surface of the target cooling board 4111 to close the opening 21 of the vacuum chamber 2. Then, the inside of the vacuum chamber 2 is evacuated by a vacuum pump. Then, a negative direct current high voltage is applied between the target cooling platen 4111 and the support base 4120 to generate a constant flow rate from the gas supply device 3 in a state where an electric field and a magnetic field are generated therebetween as described above. The discharge gas is supplied, plasma is generated, high-density plasma is generated on the target T, the sputtering rate of the ions of the discharge gas is increased, and the discharge gas is attracted toward the target T and collides with the surface of the target T. .
As a result, the molecules and atoms jump out from the surface of the target T, and are efficiently deposited on the surface of the film formation target substrate W, and a thin film having a predetermined thickness is formed on the surface.

When forming a thin film, it is important to form the film to have a uniform thickness. In the case of forming a film by a magnetron sputtering apparatus, if the discharge gas to be ionized is not uniformly distributed, this is one of the causes of the non-uniform sputtering over the entire target surface.

In the above-described sputtering apparatus 1B, the gas inlet 23 is provided at an intermediate portion of the outer periphery between the target T and the substrate W, while the exhaust port 22 is provided at the outer peripheral portion of the substrate W. Since it is provided below the vicinity, the concentration of the discharge gas is highest in the area connecting the tip of the gas supply pipe 31 and the exhaust port 22 with a straight line, and decreases as the distance from the part increases. Also, if the flow rate of the discharge gas is increased in order to keep the gas concentration constant, the number of times that the sputtered target molecules collide with the gas increases, and eventually the film formation efficiency decreases. There is.

In this state, even if the discharge gas is ionized and the positive ions are attracted to and collide with the target T, they do not collide with the surface of the target T with a uniform distribution. Is not uniform over the entire surface of the film formation substrate W,
When a film is formed, a film thickness difference occurs.

For this reason, as shown in FIG. 6, a through hole Tc is opened at the center of the target Tb, and the gas supply pipe 31 constituting the gas supply device 3 is connected to the connecting part 33 from the outer peripheral surface of the target cooling platen 4111. Is introduced into the upper surface of the target Tb below the target cooling board 4111 via the substrate and a discharge gas is supplied between the target Tb and the substrate W from above the through hole Tc. In addition, a sputtering apparatus 1C for keeping the gas concentration constant has been proposed.

[0017]

However, the discharge gas supplied from the through-hole Tc flows in the direction of the arrow, and the gas concentration depends on the non-uniformity of the concentration of the discharge gas observed in the sputtering apparatus 1B. Is slightly improved,
The sputtering apparatus 1B in relation to the position of the exhaust port 22
The same phenomenon as described above occurs, and it is difficult to make the gas concentration uniform over the entire surface of the target Tb.

In order to obtain a uniform gas concentration, targets T, T having a diameter larger than the diameter of the film-forming substrate W are used.
Attempts have been made to cover the non-uniformity of the film thickness due to fluctuations in sputtering conditions using a, but no satisfactory uniformity has been obtained.

An object of the present invention is to solve the above-mentioned problems, and the distribution of a discharge gas supplied between a target and a substrate on which a film is to be formed is made uniform so as to make the surface of the substrate on which a film is to be formed. It is an object of the present invention to obtain a sputtering apparatus capable of uniformly performing sputtering and forming a film having a uniform thickness.

[0020]

According to the first aspect of the present invention, there is provided a vacuum chamber, a gas supply device for supplying a discharge gas for generating plasma in the vacuum chamber, and the vacuum chamber. And a support table, on which a substrate on which a film is to be formed, can be mounted, and a film-forming material, which is disposed in parallel with the film-forming substrate mounted on the support at a predetermined interval. In a sputtering apparatus comprising a flat target provided, and a plasma generating apparatus for generating plasma between the target and the support in the vacuum chamber,
A plurality of holes for penetrating the target in a thickness direction thereof and in a direction perpendicular to a film formation substrate placed on the support base, and supplying the discharge gas to the film formation substrate side; In order to solve the above problem, the gas supply holes are uniformly opened and formed on the target surface, and the discharge gas supplied from the gas supply device is supplied only from the respective gas supply holes. ing.

In the invention according to claim 2, the plasma generating apparatus in the sputtering apparatus according to claim 1 is constituted by a support base having one polarity and a target electrode having the other polarity. An electric field generator for generating electrons from the target electrode by applying an electric field between the target electrode and electrons generated between the target and the support from the target electrode, crossing the electric field generated by the electric field generator; And a magnetic field generator for generating a magnetic field for causing trochoidal motion.

Furthermore, in the invention described in claim 3, the diameter of the target in the sputtering apparatus according to claim 1 is slightly larger than the diameter of the substrate on which the film is formed, and the target is formed by the sputtering. It is characterized by being arranged in parallel at a predetermined interval so as to cover the entire area of the substrate. Further, in the invention according to the fourth aspect, the diameter of the gas supply hole of the target in the sputtering apparatus according to the first aspect is formed to be about 1.5 mm or less. I do.

Therefore, according to the sputtering apparatus of the first aspect, a thin film having a uniform thickness can be formed over the entire surface of the substrate on which the film is to be formed.

According to the sputtering apparatus of the second aspect, in addition to the operation of the sputtering apparatus of the first aspect, a film is formed efficiently at a relatively low voltage because a magnetron sputtering structure is employed. be able to.

Further, according to the sputtering apparatus of the third aspect, in addition to the function of the sputtering apparatus of the first aspect, the discharge gas is supplied from a plurality of uniformly formed through holes to the film-forming substrate. Can be ejected toward the entire surface of the substrate.

According to the sputtering apparatus of the fourth aspect, in addition to the operation of the sputtering apparatus of the first aspect, the discharge gas is supplied from the through holes of the plurality of uniformly formed fine holes. It can be ejected toward the entire surface of the deposition target substrate.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A sputtering apparatus according to the present invention will be described below with reference to FIGS.

FIG. 1 is a sectional view showing the structure of a sputtering apparatus according to one embodiment of the present invention, FIG. 2 is a plan view of a target suitable for use in the sputtering apparatus shown in FIG. 1, and FIG.
FIG. 2 is a plan view seen from the back surface of a target cooling board suitable for use in the sputtering apparatus shown in FIG. 1.

In the sputtering apparatus of the present invention, the same components as those of the prior art sputtering apparatuses 1B and 1C are denoted by the same reference numerals, and description thereof will be omitted.

In FIG. 1, reference numeral 1A indicates a sputtering apparatus according to an embodiment of the present invention. The sputtering apparatus 1A of this embodiment is also configured in a magnetron sputtering type, and includes a vacuum chamber 2 and a gas supply apparatus 5 for supplying a discharge gas for generating plasma in the vacuum chamber 2. A support table 4120 disposed in the vacuum chamber 2 and capable of mounting the film-forming substrate W thereon, and a film-forming material, and the film-forming substrate W mounted on the support table 4120. It comprises a flat plate-shaped target Ta arranged in parallel at a predetermined interval, a plasma generation device 6 for generating plasma between the target Ta in the vacuum chamber 2 and the support table 4120, and the like. ing.

The target Ta used in the present invention
Is one of the two major features of the components constituting the sputtering apparatus 1A of the present invention. As shown in FIGS. 1 and 2, a flat plate having a diameter larger than the outer diameter of the film formation target substrate W is used. And in its thickness direction and the support 412
A plurality of gas supply holes 54 penetrating in a direction perpendicular to the film formation substrate W mounted on the substrate 0 and supplying the discharge gas to the film formation substrate W side are substantially uniform on the target surface. The discharge gas supplied from the discharge gas supply source is formed in each of the gas supply holes 54 so as to be described later.
It is formed with a structure that can be supplied from the company.

The number and position of the gas supply holes 54 of the target Ta and the sizes of the openings are determined through experiments.

In the illustrated example, the plurality of gas supply holes 54 are arranged at equal angular intervals from the center of the target Ta so as to be radially arranged as shown by a plurality of broken lines L and arranged so as to have the same radius. It is formed in an annular shape. The diameters of the gas supply holes 54 are smaller as they go from the gas supply hole 54 near the center to the gas supply hole 54 near the outer periphery. The reason for this is that, as described later, the supply of the discharge gas from the gas supply pipe 31 to the gas distribution groove 53 is performed from the outer peripheral portion of the target Ta. If a configuration in which the supply is performed is adopted, the diameters of the gas supply holes 54 are formed to have opposite sizes. Note that a broken line L is a line indicating a position corresponding to a gas distribution groove 53 described later with reference to FIG.

The vacuum chamber 2 is formed in a cylindrical shape as in the prior art sputtering apparatuses 1B and 1C, has an opening 21 above, and has an exhaust port 22 in a part of the periphery of the bottom surface. Is formed. However, the gas inlet 23 found in the conventional sputtering apparatus 1B is not formed on the side wall surface. The opening 2
1 includes a plasma generation device 6 such as a target Ta described later.
The member constituting the cathode is mounted. Further, a vacuum pump (not shown) is connected to the exhaust port 22.

The support 4120 is fixed to the bottom inside the vacuum chamber 2 and a substrate W to be deposited such as a digital video disk or a semiconductor wafer is mounted on the upper surface.
Fixed. The support 4120 is made of a good electric conductor, and is electrically connected to the vacuum chamber 2.

The gas supply device 5 includes a gas supply pipe 51 connected to a discharge gas source (not shown) and a gas supply pipe 51 connected to the gas supply pipe 51, similarly to the gas supply device 3 in the conventional sputtering apparatuses 1B and 1C. A gas flow control valve 52 mounted in the middle part, a gas distribution groove 53 (FIGS. 1 and 3) formed below a target cooling platen 4111 which constitutes a part of the plasma generation device 6 described later,
The target Ta includes a plurality of gas supply holes 54 formed of through holes formed in the target Ta, and a pair of connecting parts 55 and the like.

The gas flow control valve 52 is a means for controlling the flow rate of the discharge gas to the vacuum chamber 2, and can control the flow rate by adjusting the degree of opening.

The pair of connecting parts 55 are formed of an electric insulator made of a resin such as Teflon.
And other external piping from high voltage. These connecting parts 55 are arranged at positions facing each other on the outer peripheral portion of the target cooling board 6111.

The plasma generator 6 comprises an electric field generator 61 and a magnetic field generator 42. The electric field generator 61 has a structure for closing the opening 21 of the vacuum chamber 2. It comprises a cathode section 6110, the support 4120 at a ground potential, and a DC power supply 4130. Further, the cathode portion 6110 is composed of a hollow disk-shaped target cooling plate 6111 having an outer diameter slightly larger than the diameter of the opening 21 and a cooling water supply pipe / electrode 4112 connected to the center of the upper surface. ing. On the lower surface of the target cooling board 6111, means for mounting and fixing the target Ta are provided. Then, similarly to the target cooling plate 4111 of the related art, cooling water from a cooling water source (not shown) is flowed from the cooling water supply pipe / electrode 4112 into the target cooling plate 6111 at a constant flow rate, and ions are generated during sputtering. Target T whose temperature rises due to kinetic energy
Is configured to always be cooled.

The target cooling plate 611
As shown in FIG. 3, a gas distribution groove 53 is formed on the lower surface of 1. The gas distribution groove 53 has a substantially annular groove (hereinafter abbreviated as “annular groove”) 531 formed in the outer peripheral portion, and a plurality of gas communication grooves communicating from the center of the target cooling board 6111 to the annular groove 531. Book radial groove 53
2, a pair of connecting parts 55 provided on an outer peripheral portion on a diameter line of the target cooling board 6111, and a pair of connections linearly communicating with the connecting parts 55 and the annular groove 531 respectively. It is composed of a concave groove 533 and a branch pipe 534 that branches off from the gas supply pipe 51.

The width of the annular groove 531 is equal to the width of the connecting groove 533.
An annular groove 531 on a diameter line perpendicular to a diameter line connecting the pair of connection grooves 533 is formed so that a portion where the portions communicate is the narrowest and their width gradually increases.
It is formed to be the widest in the part. Further, the width of the plurality of radial grooves 532 is the same as that of the target cooling plate 61.
11 is formed to be the widest on the center side and the narrowest on the outer peripheral side connected to the annular groove 531. This is because the pressure of the supplied discharge gas is lower than the target cooling plate 611.
At the position where the gas enters the target Ta from the first gas distribution groove 53,
This is to ensure that the pressure is the same at any of the gas supply holes 54. Each of the radial grooves 532 is formed as shown in FIG.
As shown by a broken line L in FIG. 3, the gas supply holes 54 are formed so as to cover all the radially arranged gas supply holes 54 (circles indicated by dotted lines P in FIG. 3). The gas supply pipe 51 is connected to each connection component 55 via two branch pipes 534.

In the gas distribution groove 53 configured as described above, the discharge gas is supplied from the pair of connecting parts 55 to the annular groove 53.
1 and a part of the discharge gas also flows into the radial groove 532 facing each connecting part 55, and the discharge gas flowing into the annular groove 531 is discharged from each of the radial grooves 532. The gas flows from the tapered portion into the radial grooves 532, flows into the respective gas supply holes 54 opened in the radial grooves 532, passes through the target Ta, and moves between the target Ta and the substrate W to be deposited. The discharge gas can be discharged at a uniform concentration over the entire region.

Furthermore, a negative electrode of a DC power supply 4130 is connected to the cooling water supply pipe / electrode 4112, and the DC power supply 4130 supplies a high voltage,
For example, a voltage of about 400 V to 500 V is applied to the target cooling platen 6111, while the support base 41
Reference numeral 20 is connected to the ground potential via the vacuum chamber 2. Therefore, as shown in FIG. 1, by applying the voltage between the target cooling platen 6111 and the support 4120, electrons are generated from the target cooling platen 6111 serving as a cathode, and an electric field is generated.

The magnetic field generator 62 includes an S-pole magnet 4210 and an N-pole magnet 4220 formed in a double annular shape around the cooling water supply pipe and electrode 4112 on the upper surface of the target cooling board 6111. As shown in FIG. 1, a magnetic field is generated in a state of intersecting the electric field generated by the electric field generator 61, and is generated from the target cooling board 6111 toward the support base 4120. The electron is restrained and trochoidal motion is performed.

In the sputtering apparatus 1A, reference numeral 4113 denotes a shield plate,
Is attached to the outer periphery of the lower surface of the target cooling plate 6111 in the opening 21 so as to sufficiently surround the periphery of the target cooling plate 6111. Further, a deposition prevention plate 4114 having a diameter slightly smaller than the diameter of the shield plate and covering a portion other than the surface of the film formation target substrate W is mounted in the vacuum chamber 2.

Next, the film forming operation of the sputtering apparatus 1A configured as described above will be described. First, the substrate W on which a film is to be formed is placed and fixed on the upper surface of the support 4120, and the target Ta is mounted and fixed on the lower surface of the target cooling board 6111, and the opening 21 of the vacuum chamber 2 is closed. Then, the inside of the vacuum chamber 2 is evacuated by a vacuum pump. During sputtering, a vacuum pressure of 10-3 to 10-4 Torr is always maintained.

Then, a high negative DC voltage is applied between the target cooling board 6111 and the support 4120,
In the state where an electric field and a magnetic field are generated between the two as described above, the annular groove 531 of the gas distribution groove 53, the radial groove 532, etc., and the target Ta A constant flow rate of the discharge gas is uniformly supplied through the gas supply holes 54 to generate plasma, generate high-density plasma on the target surface, and increase the sputtering rate of the discharge gas ions.
To collide with the surface of the target Ta.

Since the supply of the discharge gas of the present invention is performed from within the target surface as described above, it is performed with a nearly uniform concentration distribution on the surface of the target Ta. As described in the section “Prior Art”, the movement of electrons in the vicinity of the surface of the target Ta promotes ionization of the discharge gas and significantly increases the ionization rate. Since the gas concentration is distributed almost uniformly, the ion distribution is also distributed in accordance therewith, and the ion collides with the surface of the target Ta in a nearly uniform number. A thin film having a uniform thickness is precisely formed on the surface of the film formation target substrate W.

[0049]

As described above, according to the present invention,
A thin film having a uniform thickness can be obtained over the entire surface of the substrate on which the film is to be formed. When the reflectance is to be kept within the specified range depending on the film thickness of an optical disc or the like, the process margin can be improved. Numerous excellent effects can be obtained, such as that the target can be achieved by making the size of the target slightly larger than the size of the substrate on which the film is to be formed.

[Brief description of the drawings]

FIG. 1 is a configuration sectional view of a sputtering apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view of a target suitable for use in the sputtering apparatus shown in FIG.

3 is a plan view seen from the back surface of a target cooling board suitable for use in the sputtering apparatus shown in FIG. 1;

FIG. 4 is a configuration sectional view of a conventional sputtering apparatus including a general discharge gas supply apparatus.

FIG. 5 is a cross-sectional view of a configuration of a plasma generating apparatus incorporated in the sputtering apparatus shown in FIG.

FIG. 6 is a configuration sectional view of a sputtering apparatus provided with another discharge gas supply device.

[Explanation of symbols]

1A ... sputtering apparatus of one embodiment of the present invention, 2 ...
Vacuum chamber, 21: opening of vacuum chamber 2, 22: exhaust port of vacuum chamber 2, 4120: support base, 4130: DC power supply, 42: magnetic field generator, 5: gas supply device, 51: gas supply pipe, 52 ... Gas flow control valve, 53 ... gas distribution groove, 531
... annular grooves, 532 ... radial grooves, 533 ... connecting grooves,
534: branch pipe, 54: gas supply hole formed in target Ta, 55: connecting part, 61: electric field generator,
6110: Cathode part, 6111: Target cooling board, Ta
... Targets suitable for use in the sputtering apparatus of the present invention

Claims (4)

[Claims] A vacuum chamber; a gas supply device for supplying a discharge gas for generating plasma in the vacuum chamber; and a support base disposed in the vacuum chamber and capable of mounting a substrate on which a film is to be formed. A flat plate-shaped target made of a film-forming material and disposed in parallel with a predetermined interval with respect to the film-forming substrate mounted on the support table; and the target in the vacuum chamber. And a plasma generating apparatus configured to generate plasma between the support and the support, wherein the target has a thickness direction, and a film-forming substrate mounted on the support. A plurality of gas supply holes for penetrating in a direction perpendicular to the substrate and supplying the discharge gas to the deposition target substrate side are uniformly opened and formed on the target surface, and are supplied from the gas supply device. The discharge gas is Sputtering apparatus, characterized in that it is supplied only from the supply hole. 2. The plasma generating apparatus according to claim 1, wherein the plasma generating apparatus includes a support having one polarity and a target electrode having the other polarity, and generates an electric field from the target electrode by applying an electric field between the two. A magnetic field generating device that generates a magnetic field that intersects the electric field generated by the electric field generating device and causes the electrons generated between the target and the support to perform trochoidal motion from the target electrode. The sputtering apparatus according to claim 1, wherein 3. The target is arranged in parallel at a predetermined interval so that the diameter of the target is slightly larger than the diameter of the opposed substrate on which the film is to be formed, and the target covers the entire area of the substrate on which the film is to be formed. The sputtering apparatus according to claim 1, wherein 4. The sputtering apparatus according to claim 1, wherein the diameter of the gas supply hole of the target is about 1.5 mm or less.