JP2001222000A - Liquid crystal panel and liquid crystal projector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal panel that video brightness is high and deterioration of display quality due to defects such as display unevenness or uneven brightness, is suppressed. SOLUTION: The liquid crystal panel is provided with a pixel part having plural thin film transistors and pixel electrodes formed on the first substrate, the second substrate, a liquid crystal and gap holding members arranged between the first and the second substrates and a micro lens array having plural micro lenses arranged on the second substrate on the side opposite to the first substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD [0001] The invention disclosed in the present specification is:
Related to liquid crystal panels. The invention also relates to a liquid crystal projector using a liquid crystal panel.

[0002]

2. Description of the Related Art Recently, a semiconductor device in which a semiconductor thin film is formed on an inexpensive glass substrate, for example, a thin film transistor (TF)
The technology for making T) is developing rapidly. The reason is that the demand for active matrix type liquid crystal panels has increased.

An active matrix type liquid crystal panel (liquid crystal panel) includes thin film transistors (pixel TFTs) in tens to millions of pixel portions arranged in a matrix.
Are arranged, and the charge flowing into and out of each pixel electrode is
This is controlled by the switching function.

[0004] Among them, a projection type display device using a liquid crystal panel, a so-called projector, is rapidly expanding its market. The reason is that the liquid crystal projector is compared with the projector using the CRT,
It has good color reproducibility, small size, light weight, low power consumption, and the like.

[0005] Liquid crystal projectors are classified into three-panel type and single-panel type according to the number of liquid crystal panels used.

A single-panel type liquid crystal projector has one optical component compared to the above-mentioned three-panel type liquid crystal projector.
Since only / 3 is required, it is excellent in price and size. However, when the same liquid crystal panel is used in the three-panel type and the conventional single-panel type, the three-panel type uses one pixel as a single-color pixel, whereas the three-panel type uses three colors on one pixel. Since the single-panel type cannot be used, the image quality is inferior to the three-panel type. Moreover, the single-panel LCD projector described above
An image of a desired color is obtained by absorbing unnecessary components of the white light from the light source into the color filter. Therefore, white light incident on the liquid crystal panel transmits only 1/3, and the light use efficiency is poor.

[0007] In order to improve the brightness of the single-panel type liquid crystal projector, a method of increasing the brightness of a light source has been adopted. However, there have been problems with heat generation and light resistance due to light absorption of a color filter.

In order to overcome the drawbacks of the conventional single-panel liquid crystal projector, a three-panel liquid crystal projector using three dichroic mirrors has been devised.

Please refer to FIG. FIG. 14 is a configuration diagram of an optical system of the three-panel liquid crystal projector. 14
01 is a light source composed of a lamp and a reflector. Light source 1401 emits white light having red, green, and blue spectra. The light source 1401 is set so that the parallelism of the emitted white light is high. In addition, a reflector is used to effectively use white light emitted from the lamp.

[0010] White light emitted from a light source 1401 enters dichroic mirrors 1402 and 1403. These two dichroic mirrors 1402, 1403
Converts white light from the light source 1401 into light of three primary colors (red, green,
Blue).

The dichroic mirror 1402 reflects only light in the blue (B) wavelength region and transmits other light. The dichroic mirror 1403 reflects only light in the red (R) wavelength region of the light transmitted through the dichroic mirror 1402 and transmits other light. The total reflection mirror 1404 reflects light in the green wavelength region transmitted through the dichroic mirrors 1402 and 1403. With such a configuration, the light source 1401
Can be separated into three primary colors.

The blue and green lights separated by the dichroic mirror 1402 and the total reflection mirror 1404 are reflected by total reflection mirrors 1406 and 1405 and enter the liquid crystal panels 1407 and 1409, respectively. The red light separated by the dichroic mirror 1403 enters the liquid crystal panel 1408. LCD panel 14
The blue, red, and green transmitted lights transmitted through 07, 1408, and 1409 are collected by a dichroic prism 1410 and projected on a screen by a projection lens 1411.

[0013]

In recent years, liquid crystal projectors have been required to be thinner and lighter, and also to have higher definition, higher image quality and higher brightness.

In order to reduce the thickness and weight of the liquid crystal projector, it is necessary to reduce the substrate size of the liquid crystal panel. In order to reduce the substrate size and not to degrade the image quality, the pixel pitch must be reduced to reduce the area of the pixel portion.

FIG. 15 is a schematic view of a pixel of a liquid crystal panel. A pixel TFT 15 having a wiring 12, an active layer 13, and a gate electrode 14 which is a part of the wiring 12, and a pixel electrode 16 are provided as shown in FIG. A black matrix 17 is provided on the wiring 12 and the pixel TFT 15 so as to cover a region that does not need to transmit visible light. A black matrix (BM) refers to a light-blocking film provided above a wiring which does not need to transmit visible light, a pixel TFT, and the like.

The pixel pitch L indicates a shorter distance between the wirings 12 facing each other across the pixel 11. If the distance between the wirings 12 facing each other is the same between the wiring in the row direction and the wiring in the column direction, it indicates the distance between both wirings.

It is difficult to reduce the thin film transistor (pixel TFT) and the wiring for driving the liquid crystal on the same scale as reducing the pixel pitch.

If the size of the thin film transistor is too small, the amount of current flowing is limited. Therefore, if the pixel TFT is too small, it becomes difficult to supply a current necessary for driving the liquid crystal. On the other hand, if the wiring is too thin, the resistance of the wiring increases. Therefore, there is a limit in reducing the pixel TFT and the wiring.

Therefore, when the pixel pitch is reduced, the ratio of the portion covered by the BM, such as the pixel TFT and the wiring, to the pixel increases, and the aperture ratio decreases.

When the aperture ratio decreases, the brightness of the image decreases unless the brightness of the light source is increased. However, increasing the brightness of the light source is not preferable because power consumption increases.

Therefore, in order to increase the brightness of an image without increasing the brightness of a light source, it is conceivable to form a microlens array on the light incident side of a liquid crystal panel.

The microlens array shown here has a plurality of microlenses corresponding to each pixel on a one-to-one basis. The light originally blocked by the black matrix by the microlens array is collected at a portion of the pixel portion where visible light is transmitted. Therefore, the light use efficiency can be increased, and without increasing the brightness of the light source,
The brightness of the image can be increased.

FIG. 16 is a sectional view of a liquid crystal panel having a microlens array. TFT substrate 21, pixel TFT
23, a pixel electrode 22, an alignment film 31, a liquid crystal 24, a counter electrode 25, a BM 26, and a counter substrate 28 are provided as shown in the figure.

The microlens array 27 having a plurality of microlenses 30 is provided on the opposite side of the TFT substrate 21 with respect to the counter substrate 28. In FIG. 16, the microlens array 27 is provided so as to be in contact with the counter substrate 28, but may be provided at a distance from the counter substrate 28.

One micro lens 30 for one pixel
Are provided so as to correspond to each other, and the size of the microlens 30 is determined by the pixel pitch.

Light incident from the counter substrate 28 is collected by the microlens 30 and enters the opening 29 of the pixel.

FIG. 17 is a sectional view of the microlens 30. As shown in FIG. Light incident from the spherical surface of the microlens 30 is refracted and passes through the focal point O. The distance between the principal point O ′ of the microlens and the focal point O is the focal length f. In the microlens shown in the figure, the principal point is the vertex of the spherical surface of the microlens, but the position of the principal point differs depending on the shape of the microlens.

When the microlens 30 is regarded as a part of a sphere, the center of the sphere is defined as a center C, and the radius is defined as a radius of curvature r.

Since the diameter D of the microlens is determined by the pixel pitch of the corresponding pixel, it is necessary to reduce the diameter D of the microlens when the area of the pixel portion of the liquid crystal panel is reduced.

In order to reduce the diameter D of the microlens, there are a method of reducing the radius of curvature r while keeping the similar shape without changing the radius of curvature, and a method of reducing the radius of curvature r.

The former is not easy in design and manufacture, and it is difficult to increase the number of microlenses per unit area of the microlens array (integration degree).

The F value of the lens is a value obtained by dividing the focal length by the diameter. Lenses having the same radius of curvature have the same focal length. Therefore, if the diameter D is reduced while maintaining the similar shape without changing the curvature radius r, the F value increases, and the amount of light per unit area reaching the image plane decreases, which is not preferable.

The latter method of reducing the diameter D by reducing the radius of curvature r is relatively easier to design and manufacture than the former method. However, when the radius of curvature r is reduced, the depth of focus becomes shallow, and it becomes difficult to efficiently collect light at the opening of the pixel. The reason will be described below in detail.

The depth of focus is a moving distance of the image plane that can satisfy the required resolution when the image plane moves in the optical axis direction. The depth of focus T is calculated from the required resolution S and F value by the following equation (1).
Is required.

[0035]

[Equation 1] T = 2 × S × F

In this case, the required resolution S is proportional to the size of the opening of the pixel. The larger the opening, that is, the larger the pixel pitch, the larger the required resolution S, and conversely, the smaller the opening, that is, the pixel. If the pitch is small, the required resolution S becomes small.

The F value is obtained from the focal length f and the diameter D of the microlens by the following equation (2).

[0038]

[Formula 2] F = f / D

The diameter D of the microlens is proportional to the pixel pitch. Like the required resolution S, the larger the pixel pitch, the larger the diameter D, and the smaller the pixel pitch, the smaller the diameter D.

The focal length f is the radius of curvature r of the micro lens.
And the constant n determined by the refractive index of the microlens and the refractive index of the medium, are obtained by the following equation (3).

[0041]

[Formula 3] f = nr

When the depth of focus T is obtained from the equations (1) to (3), the following equation (4) can be derived.

[0043]

[Formula 4] T = (2n × r) · S / D

Here, the required resolution S and the diameter D are values determined by the pixel pitch and the size of the aperture, and have the same primary parameters. Therefore, it can be seen from Equation 4 that the depth of focus T is determined by the radius of curvature r. Increasing the radius of curvature r of the microlens array also increases the depth of focus T, and conversely, decreasing the radius of curvature r decreases the depth of focus T.

The upper surfaces of the TFT substrate and the counter substrate are not completely flat. Therefore, when the cell gap becomes non-uniform over the entire substrate, the diameter D of the microlens
Is large, there is a problem that even if there is no problem, by reducing the diameter D, the image becomes uneven in luminance. Therefore, it is required to make the cell gap more uniform.

Also, since the microlenses are formed only on one surface of the microlens array substrate, the microlens array substrate is not flat but warps. Also, when bonding the microlens array to the opposing substrate with an adhesive such as an ultraviolet-curable resin, unevenness in the curing time of the adhesive, shrinkage of the ultraviolet-curable resin during curing, and pressure during bonding remain. When the ultraviolet curable resin is cured in the state, the counter substrate after bonding is warped. Furthermore, when the microlens array substrate and the opposing substrate have different thermal expansion coefficients, the substrate is warped due to a temperature change. When a thin substrate is used from the viewpoint of weight reduction and cost reduction, the substrate lacks rigidity.
These substrates are warped, resulting in a non-uniform cell gap and color unevenness. Therefore, it is required to make the cell gap more uniform.

When a spherical spacer is provided between the TFT substrate and the counter substrate, the difference (error) in the cell gap depending on the location of the substrate can be eliminated to some extent. However, in the future, the pixel pitch will be 40 μm or less, preferably 30 μm.
Since it is necessary to manufacture a liquid crystal panel having a size of μm or less, when the pixel pitch is reduced, even a spherical spacer having a size of several μm exists in the opening of the pixel, resulting in deterioration of display quality.

FIG. 18 is a schematic view of a pixel using a spherical spacer. A wiring 42, a pixel TFT 45 having an active layer 43 and a gate electrode 44 which is a part of the wiring 42, and a pixel electrode 46 are provided as shown in the drawing. The BM 47 is provided on the wiring 42 and the pixel TFT 45 so as to cover a region that does not need to transmit visible light.

If the spherical spacer 49 is located on the pixel electrode 46 in the opening 48, the liquid crystal material is disturbed in the vicinity of the spherical spacer 49, so that disturbance of image display (disclination) is observed. May be done.

Similarly, a spherical spacer 4 is formed on the wiring 42.
Even when 9 is provided, the disclination 50 may be observed when the spherical spacer 49 is close to the opening.

The TFT substrate and the counter substrate themselves are also
Its top surface is not perfectly flat. Therefore, even if spherical spacers are scattered on the upper surface of the TFT substrate, the cell gap varies depending on the location of the substrate, and a uniform cell gap cannot be realized over the entire substrate. As a result, the counter substrate is distorted. Defects such as display unevenness and interference fringes appearing on the upper surface of the opposing substrate appear in the liquid crystal panel in which the cell gap differs depending on the position of the substrate and the opposing substrate has a distortion.

Further, in the conventional spherical spacer, when the liquid crystal material is injected, the spherical spacer itself flows due to the flow of the liquid crystal material, and as a result, a uniform spacer distribution density cannot be obtained. In some cases, a gap difference was caused.

Generally, a liquid crystal panel manufactured or prototyped has a cell gap of about 4 to 6 μm irrespective of the pixel pitch. In addition, a liquid crystal panel using a ferroelectric liquid crystal, which has recently attracted attention, is required to have a small cell gap due to its characteristics.

However, it is generally difficult to manufacture a cell having a small and uniform cell gap using a conventional spherical spacer.

As described above, when the cell gap is controlled using the conventional spherical spacer, there is a problem that it is difficult to obtain a good display due to various factors.

In view of the above problems, it is an object of the present invention to reduce the thickness and weight of a liquid crystal projector, and at the same time to increase the definition, image quality and luminance of a liquid crystal projector. In particular, it is an object to increase the luminance of an image without increasing the luminance of a light source, and to suppress deterioration of display quality due to defects such as display unevenness and uneven brightness of a liquid crystal projector.

[0057]

According to the present invention, there are provided three liquid crystal panels provided with a liquid crystal and a gap holding member between a TFT substrate having a pixel portion and a counter substrate having a counter electrode. The present invention relates to a three-panel type liquid crystal projector in which a microlens array is provided on the side where light is incident, that is, on the counter substrate side. In particular, the present invention relates to a small liquid crystal panel having a substrate size of 1 inch or less diagonally.

Gap holding member (gap holding member)
Is formed by etching an insulating film formed on a TFT substrate or a counter substrate. Therefore, unlike a spherical spacer, it is possible to arrange the spacer at a desired position. It is possible to control the cell gap more uniformly than when a spherical spacer is used.

The shape of the gap holding member is different from the conventional spherical shape, and may be a column having a circular, elliptical or polygonal bottom surface, or a tapered side surface.
Some spheres are cut out.

The gap holding member is formed on a contact portion between the pixel electrode of the pixel and a wiring (drain wiring) connected to the drain region of the pixel TFT. The contact portion between the pixel electrode and the drain wiring is not located in the opening of the pixel, in other words, in the region where visible light used for actual display is transmitted. Since the liquid crystal material is separated from the region (opening) through which visible light is transmitted to such an extent that the orientation of the liquid crystal material is not disturbed, disturbance (disclination) of image display hardly occurs.

The plurality of micro lenses included in the micro lens array correspond to the plurality of pixels included in the pixel portion on a one-to-one basis.

Since the two substrates of the liquid crystal panel can be uniformly controlled with a desired value of the cell gap by the gap holding member, even if the depth of focus becomes shallow due to the miniaturization of the microlens array, the disk can be kept in the disc. Deterioration of display quality due to display unevenness and luminance unevenness of the liquid crystal projector such as ligation and interference fringes can be suppressed.

According to the present invention, it is possible to increase the brightness of an image without increasing the brightness of a light source and to realize a thinner and lighter liquid crystal projector as well as a higher definition, a higher image quality and a higher brightness. I made it.

The present invention is particularly effective for a liquid crystal panel having a substrate size as small as 1 inch or less on a diagonal.

According to the present invention, a first substrate, a second substrate, a liquid crystal and a plurality of gap holding members provided between the first substrate and the second substrate, and a plurality of microlenses are provided. And a microlens array having the microlens array, wherein the microlens array is provided on a side of the first substrate opposite to the second substrate. Provided.

According to the present invention, a first substrate having a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, a microlens array having a plurality of microlenses, Wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. The microlens array is provided on the first substrate,
A liquid crystal panel provided on the side opposite to the substrate.

According to the present invention, a first substrate having a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, a microlens array having a plurality of microlenses, Wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. The microlens array is provided on the first substrate of the second substrate.
A liquid crystal panel provided on the side opposite to the substrate.

According to the present invention, a first substrate having a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, a microlens array having a plurality of microlenses, Wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. A liquid crystal panel is provided, wherein a microlens array is provided on a surface of the second substrate opposite to a surface facing the first substrate.

According to the present invention, a first substrate having a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, a microlens array having a plurality of microlenses, Wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. A liquid crystal panel is provided, wherein a microlens array is provided on a surface of the first substrate opposite to a surface facing the second substrate.

According to the present invention, a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a micro substrate having a plurality of micro lenses are provided. A liquid crystal panel having a lens array, wherein the first substrate and the second substrate include: the plurality of thin film transistors;
The plurality of pixel electrodes, the counter electrode, the liquid crystal, and facing each other with the plurality of gap holding members interposed therebetween,
The liquid crystal panel is provided, wherein the microlens array is provided on a side of the first substrate opposite to the side of the second substrate.

According to the present invention, a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a micro substrate having a plurality of micro lenses are provided. A liquid crystal panel having a lens array, wherein the first substrate and the second substrate include: the plurality of thin film transistors;
The plurality of pixel electrodes, the counter electrode, the liquid crystal, and facing each other with the plurality of gap holding members interposed therebetween,
The liquid crystal panel is provided, wherein the microlens array is provided on a side of the second substrate opposite to the first substrate.

According to the present invention, a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a plurality of microlenses having a plurality of microlenses. A liquid crystal panel having a lens array, wherein the plurality of thin film transistors control a potential applied to the plurality of pixel electrodes, and wherein the first substrate and the second substrate are And the plurality of pixel electrodes;
The counter electrode, the liquid crystal, and the plurality of gap holding members are interposed therebetween, and a micro surface is formed on a surface of the second substrate opposite to a surface facing the first substrate. A liquid crystal panel is provided, wherein a lens array is provided, and the plurality of microlenses are provided in one-to-one correspondence with the plurality of pixels.

According to the present invention, a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a plurality of micro lenses having a plurality of micro lenses are provided. A liquid crystal panel having a lens array, wherein the plurality of thin film transistors control a potential applied to the plurality of pixel electrodes, and wherein the first substrate and the second substrate are And the plurality of pixel electrodes;
The microelectrode facing the counter electrode, the liquid crystal, and the plurality of gap holding members, and facing the surface of the first substrate opposite to the surface facing the second substrate. A liquid crystal panel is provided, wherein a lens array is provided, and the plurality of microlenses are provided in one-to-one correspondence with the plurality of pixels.

According to the present invention, a white light source, separating means for separating white light emitted from the white light source into a plurality of lights having different colors, a plurality of liquid crystal panels respectively corresponding to the plurality of lights, A liquid crystal projector comprising: a first optical unit that irradiates the plurality of liquid crystal panels with a plurality of light beams, and a second optical unit that collects a plurality of transmitted light beams transmitted through the plurality of liquid crystal panels. Wherein at least one of the plurality of liquid crystal panels has a first substrate and a second substrate, and the plurality of lights are applied to the liquid crystal panel from the second substrate side; A plurality of gap holding members are provided between the first substrate and the second substrate, and a microlens array is provided on a side of the second substrate to which the plurality of lights are irradiated. Characterized by Crystal projector is provided.

According to the present invention, a white light source, separating means for separating white light emitted from the white light source into a plurality of lights having different colors, a plurality of liquid crystal panels respectively corresponding to the plurality of lights, A liquid crystal projector comprising: a first optical unit that irradiates the plurality of liquid crystal panels with a plurality of light beams, and a second optical unit that collects a plurality of transmitted light beams transmitted through the plurality of liquid crystal panels. Wherein at least one of the plurality of liquid crystal panels has a first substrate and a second substrate, and the plurality of lights are applied to the liquid crystal panel from the second substrate side; A plurality of pixels are provided over a first substrate, the plurality of pixels each including a pixel electrode and a thin film transistor connected to the pixel electrode, and wherein the first substrate and the second Between the substrates Is provided with a plurality of gap holding member, said the second side of the plurality of light of the substrate is irradiated are microlens array is provided, a plurality of microlenses in which the microlens array has the
A liquid crystal projector is provided, wherein the liquid crystal projector is provided so as to correspond to each of the plurality of pixels on a one-to-one basis.

According to the present invention, a white light source, separating means for separating white light emitted from the white light source into a plurality of lights having different colors, a plurality of liquid crystal panels respectively corresponding to the plurality of lights, A liquid crystal projector comprising: a first optical unit that irradiates the plurality of liquid crystal panels with a plurality of light beams, and a second optical unit that collects a plurality of transmitted light beams transmitted through the plurality of liquid crystal panels. Wherein at least one of the plurality of liquid crystal panels has a first substrate and a second substrate, and the plurality of lights are applied to the liquid crystal panel from the second substrate side; A pixel portion having a plurality of pixels is provided over the first substrate, the plurality of pixels each including a pixel electrode and a thin film transistor connected to the pixel electrode,
A plurality of gap holding members are provided between the pixel portion and the second substrate, and a microlens array is provided on a side of the second substrate to which the plurality of lights are irradiated, A liquid crystal projector is provided, wherein a plurality of micro lenses included in the micro lens array are provided in one-to-one correspondence with the plurality of pixels.

According to the present invention, the plurality of thin film transistors each include a semiconductor film including a source region, a drain region, and a channel formation region, and the source region or the drain region of each of the plurality of thin film transistors is a contact region. The plurality of gap holding members may be connected to the plurality of pixel electrodes in a portion, and the plurality of gap holding members may be provided on the contact portion.

The present invention may be characterized in that the plurality of gap holding members are cylindrical.

The present invention may be characterized in that the plurality of gap holding members have an elliptical column shape.

In the present invention, the plurality of gap holding members may have a polygonal column shape.

The present invention may be characterized in that the side surfaces of the plurality of gap holding members are tapered.

The present invention may be characterized in that the plurality of gap holding members include polyimide, acrylic, polyamide, polyimide amide or epoxy resin.

The present invention may be characterized in that the plurality of gap holding members include an ultraviolet curable resin or a thermosetting resin.

The present invention may be characterized in that the liquid crystal panel has a diagonal of 1 inch or less.

According to the present invention, the plurality of gap holding members are provided outside the effective light beam converging region of the microlens, that is, in a region where the illuminance is 1/10 or less of the converging peak illuminance of the microlens. May be featured.

According to the present invention, the plurality of gap holding members are provided outside the effective light beam converging region of the microlens, that is, in a region where the illuminance is 1/20 or less of the converging peak illuminance of the microlens. May be featured.

[0087]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a schematic view of a TFT substrate of a liquid crystal panel included in the liquid crystal projector of the present invention. FIG.
FIG. 1 is an enlarged view of a part of the TFT substrate shown in FIG.
(B).

On a TFT substrate 101, a source signal line driving circuit 103, a gate signal line driving circuit 104, and a pixel portion 102
Are provided as shown in the figure. A sealing material 105 is provided around the TFT substrate 101, and liquid crystal is injected from a liquid crystal injection port 106. A gap holding member 107 is provided on the pixel portion 102.

In the present embodiment, the gap holding member is provided only in the pixel portion. However, the position where the gap holding member is arranged in the present invention is not limited to only the pixel portion.

FIG. 2 is an enlarged view of a pixel provided with a gap holding member. The pixel 113 is provided with a pixel electrode 108. A black matrix 111 is provided on the wiring and the pixel TFT (both not shown).
The contact portion 1 where the pixel electrode 108 and the drain wiring 109 provided below the pixel electrode 108 are connected.
A gap holding member 107 is provided on 10.

The contact portion 110 between the pixel electrode 108 and the drain wiring 109 is not located in the opening 112 of the pixel 113. In other words, it is not located in a region through which visible light used for actual display is transmitted.

The opening 112 is a region through which visible light is transmitted, and refers to a portion of the region surrounded by the black matrix 111 other than the region where the one that blocks visible light such as the drain wiring 109 is provided.

The gap holding member 107 is separated from the region (opening 112) through which visible light is transmitted to such an extent that the orientation of the liquid crystal material is not disturbed, so that image display disturbance (disclination) does not occur. Rai.

In the case of FIG. 2, the mechanical strength of the liquid crystal panel is increased structurally, and even a thin gap holding member is unlikely to cause rubbing damage.

The arrangement of the gap holding member in the pixel portion will be described with reference to FIGS.

In FIG. 3, the gap holding members 307 are indicated by black circles, and the contact portions 310 of the pixels where no gap holding members are formed are indicated by white circles. The direction in which the source signal lines are provided is defined as the X direction, and the direction in which the gate signal lines are provided is defined as the Y direction. In order to form a triangle as close as possible to an equilateral triangle with the closest gap holding members, one every five pixels provided in the Y direction,
A gap holding member 307 is provided. A gap holding member 307 is provided for every other pixel provided in the X direction.

With such an arrangement, the gap holding members can be dispersed in the pixel portion at a constant period. Therefore, the cell gap can be made more uniform.

Referring to FIG. 4, the arrangement of the gap holding member different from that of FIG. 3 will be described.

In FIG. 4, similarly to FIG. 3, the gap holding members 407 are indicated by black circles, and the contact portions 410 of the pixels where the gap holding members 407 are not formed are indicated by white circles.
The direction in which the source signal lines are provided is defined as the X direction, and the direction in which the gate signal lines are provided is defined as the Y direction. One for every two pixels provided in the Y direction, a gap holding member 4
07 is provided. A gap holding member 407 is provided for every two pixels provided in the X direction.

With such an arrangement, the gap holding members are scattered in the pixel portion at a constant period. Therefore, the cell gap can be made uniform.

In the present embodiment, the above two arrangements of the gap holding member have been described, but the present invention is not limited to this embodiment. In the present invention, the formation position and the number of the gap holding members can hold the cell gap,
What is necessary is just to determine so that display may not be obstructed.

The microlens array used in the present invention will be described with reference to FIGS.

A microlens array 504 having a plurality of microlenses 503 on a liquid crystal panel 502 is shown in FIG.
Are provided as shown in FIG. The pixels 501 are arranged in a stripe shape, and one microlens 503 is provided corresponding to one pixel 501.

Each of the micro lenses 503 has substantially the same shape, and has a shape obtained by cutting a part of a sphere.

The microlens array 504 is provided on the counter substrate side of the liquid crystal panel, and may be in close contact with the counter substrate or at a distance.

With reference to FIG. 6, another microlens array different from FIG. 5 will be described.

FIG. 6A is a top view of the liquid crystal panel 602, and FIG. 6B is a perspective view of the microlens array 604 of FIG. 6A. Micro lens array 604
Is a hexagonal micro lens 603 viewed from the light incident side.
Are provided. The microlenses 603 are provided corresponding to each of the delta-arranged pixels 601 of the liquid crystal panel 602.

When the microlenses 603 are hexagonal, since there is no gap between the microlenses 603, light can be more efficiently collected to the pixels as compared with a round microlens.

The shape of the microlens can be controlled by its manufacturing process. The above micro lens 603
Is, for example, an ion exchange method (for example, Appl. Opt.
ics, 21 (6) p. 1052 (1984), Ele
ctron Lett. , 17p. 452 (198
1)), a method using a photopolymerizable polymer (for example, Suzuki et al .; “A new method for producing a plastic microlens”),
The 24th Micro-Optics Research Society), a method of heating a photoresist to form a lens by surface tension (for example, Zor
an D. See Popovic et al. , Appl.
Optics, 27p. 1281 (1988)), a vapor deposition method (for example, JP-A-61-64158), a machining method, or a method disclosed in JP-A-3-248125.

The present invention is not limited to the microlens array shown in FIGS. In the present invention, a microlens array in which one microlens is provided for one pixel in the pixel portion may be used.

Although the structure in which the microlens array is provided on the counter substrate side is shown in FIGS. 5 and 6, the present invention is not limited to this structure. The micro lens array may be provided on the TFT substrate side.

FIG. 7 is a perspective view showing a schematic configuration of the liquid crystal panel of the present embodiment.

TFT substrate 701, pixel 702, alignment film 7
03, gap holding member 704, alignment film 70 for counter substrate
5, a counter electrode 706, a counter substrate 707, and a microlens array 708 having a plurality of microlenses 709 are provided as shown in the figure. The polarizing plate is omitted.
Although the alignment film is provided on both the TFT substrate and the counter substrate,
It is good also as a structure provided only in any one board | substrate. The liquid crystal panel shown in FIG. 7 has a liquid crystal (not shown) in addition to the gap holding member 704 between the alignment film 703 and the alignment film 705 for the counter substrate.

Although FIG. 7 shows the configuration in which the microlens array 708 is provided on the counter substrate 707 side, the present invention is not limited to this configuration. The micro lens array 708 may be provided on the TFT substrate 701 side.

FIG. 8 shows a three-panel type liquid crystal projector having the liquid crystal panel shown in FIG.

FIG. 8A shows a front type projector, which comprises a light source optical system, a liquid crystal panel 2601 and a screen 2602.

FIG. 8B shows a rear type projector, which includes a main body 2701, a light source optical system, and a liquid crystal panel 270.
2, a mirror 2703 and a screen 2704.

FIG. 8 (C) shows the state shown in FIG. 8 (A) and FIG.
(B) a light source optical system and a liquid crystal panel 2601 in FIG.
FIG. 3 shows an example of the structure of 2702. The light source optical system and the liquid crystal panels 2601 and 2702 are
1, mirrors 2802, 2804 to 2806, dichroic mirror 2803, optical system 2807, liquid crystal panel 28
08, a phase difference plate 2809, a projection optical system 2810, and a microlens array 2817. Projection optical system 28
Reference numeral 10 includes a plurality of optical lenses including a projection lens.

The microlens array 2817 is provided on each of the three liquid crystal panels 2808 on the light incident side.

In the optical path indicated by the arrow in FIG. 8C, the practitioner may appropriately provide an optical lens, a film having a polarizing function, a film for adjusting a phase difference, an IR film, or the like.

FIG. 8D is a diagram showing an example of the structure of the light source optical system 2801 in FIG. 8C.
In the present embodiment, the light source optical system 2801 includes a reflector 2811, a light source 2812, and lens arrays 2813 and 2813.
14, a polarization conversion element 2815 and a condenser lens 2816. Note that the light source optical system shown in FIG. 8D is an example and is not particularly limited. For example, a practitioner may appropriately provide an optical lens, a film having a polarizing function, a film for adjusting a phase difference, an IR film, or the like to the light source optical system.

According to the present invention, a liquid crystal and a gap holding member are provided between a TFT substrate having a pixel portion and a counter substrate having a counter electrode, and a micro lens array is provided on the side of the liquid crystal panel on which light is incident, that is, on the counter substrate side. Is provided.

According to the above-described structure, the present invention can arrange a spacer at a desired position. It is possible to control the cell gap more uniformly than when a spherical spacer is used.

The gap holding member is preferably formed on a contact portion between the pixel electrode of the pixel and a wiring (drain wiring) connected to the drain region of the pixel TFT. The contact portion between the pixel electrode and the drain wiring is not located in the opening of the pixel (a region through which visible light is transmitted). Since the liquid crystal material is separated from the region through which the visible light is transmitted to such an extent that the orientation of the liquid crystal material is not disturbed, disturbance (disclination) of image display hardly occurs. The gap holding member is preferably provided on the contact portion, but the present invention is not limited to this, and it is important that the gap holding member is provided at a position where the displayed image is not disturbed.

Since the two substrates of the liquid crystal panel can be controlled uniformly and with a desired value of the cell gap by the gap holding member, the depth of focus is reduced by miniaturization of the microlens array. However, it has become possible to suppress deterioration of display quality due to display unevenness and luminance unevenness of the liquid crystal projector.

According to the present invention, it is possible to increase the brightness of an image without increasing the brightness of a light source and to reduce the thickness and weight of a liquid crystal projector, as well as to achieve higher definition, higher image quality and higher brightness. I made it.

The present invention is particularly effective for a liquid crystal panel having a substrate size as small as 1 inch or less on a diagonal.

The liquid crystal panel of the present invention can be used for a goggle type display device (head mounted display). In this case, the pixels of the pixel portion are R, G,
It is necessary to form color filters so as to correspond to B respectively.

[0130]

Embodiment An embodiment of the present invention will be described with reference to FIGS. 9 to 13 and FIGS. 19 to 27.

(Embodiment 1) In this embodiment, a manufacturing process of a gap holding member on a TFT substrate will be described with reference to FIGS.

A pixel portion (not shown) is provided on a TFT substrate 901.
Is formed, and an alignment film 902 is formed on the pixel portion.
FIG. 9A shows a state after the rubbing process is performed on No. 02.

An insulating film material serving as a gap holding member is applied on the alignment film 902 to form an insulating film 903. As the insulating coating material, a resin material having a specific gravity close to that of liquid crystal and a thermal expansion coefficient is preferable. For example, a resin material selected from polyimide, acrylic, polyamide, polyimide amide, or epoxy resin can be used. Also,
An ultraviolet curable resin or a thermosetting resin material which can be formed with little thermal influence on the substrate can be used.

The coating is performed by a spin coating method at 900 rpm,
The test was performed for 10 seconds. After forming the insulating film 903, 1
Heat treatment was performed at 80 ° C. for 60 minutes. (FIG. 9 (B))

Next, the insulating coating 903 is patterned.
The gap holding member 904 was formed. Insulating coating 903
An example of the patterning method is an etching method. As another patterning method, a method in which an insulating film is formed from a photosensitive material and patterned by exposure to light and development can be used. Note that the formation position and the number of the gap holding members 904 may be determined so that the cell gap can be held and display is not hindered. (FIG. 9 (C))

In this embodiment, the shape of the gap holding member is cylindrical, and the diameter of the column is 4 μm and the height is 3.2 μm.
And In this embodiment, the gap holding members 904 are randomly arranged. The arrangement density of the gap holding members 904 may be 30 to 160 pieces / mm ² . In this embodiment, the gap holding members 904 are arranged at 50 pieces / mm ² .

In this embodiment, the shape of the gap holding member is cylindrical, but the shape of the gap holding member may be elliptical, streamlined, or polygonal such as triangular or square. Any shape is allowed as long as the cell gap between the substrate 901 (first substrate) and the counter substrate 906 (second substrate) can be controlled. Further, in the present embodiment, all the gap holding members have the same shape, but gap holding members having a plurality of types of shapes may be formed. Further, in this embodiment, the plurality of cell gap holding members are formed so that the arrangement density is uniform in the pixel portion. However, the gap holding members may be formed on the entire surface of the TFT substrate.

[0138] A sealing material 907 is applied on the alignment film 902 so as to surround the periphery of the TFT substrate 901. Then, the TFT substrate 901 is bonded to the counter substrate 906 having the alignment film 905 for the counter substrate and the counter electrode (not shown).

Next, liquid crystal as a display medium is injected from a liquid crystal injection port. Therefore, the TFT substrate 901 and the counter substrate 9
During the period 06, the liquid crystal 908 is held. In the present embodiment, since the shape of the gap holding member 904 is cylindrical, the flow resistance between the liquid crystal material and the surface of the gap holding member that occurs when the liquid crystal material is injected is small. Therefore, the liquid crystal material could be uniformly injected over the entire surface of the substrate. In addition,
The shape and arrangement of the gap holding member 908 preferably reduce this flow resistance.

Thereafter, a sealant (not shown) was applied to the liquid crystal material injection port, and the sealant was cured by irradiating ultraviolet rays, whereby the liquid crystal material was completely sealed in the cell.

(Embodiment 2) In this embodiment, a three-panel liquid crystal projector different from the liquid crystal projector described in the embodiment mode will be described.

Referring to FIG. FIG. 10 is a configuration diagram of an optical system of the above-mentioned three-panel type liquid crystal projector. 24
01 is a white light source composed of a lamp and a reflector. White light having red, green, and blue spectra is emitted from the light source 2401. The light source 2401 is set so that the emitted white light has a high degree of parallelism. In addition, a reflector is used to effectively use white light emitted from the lamp.

The white light emitted from the light source 2401 enters the dichroic mirrors 2402 and 2403. These two dichroic mirrors 2402, 2403
Converts white light from the light source 2401 into light of three primary colors (red, green,
Blue).

Dichroic mirrors 2402 and 2403
Blue, red, and green light separated by the liquid crystal panel 2408, 2409, and 2 are directly reflected by the total reflection mirror 2406, and the other two are directly reflected by the corresponding liquid crystal panels 2408, 2409, and 2 respectively.
Irradiated at 410. Liquid crystal panels 2408, 2409,
2410 has microlens arrays 2412, 2413, and 2414 on the light incident side, respectively.

Liquid crystal panels 2408, 2409, 2410
Blue, red, and green light transmitted through the dichroic mirror 2
By 404 and 2405, they are collected together and projected on a screen by a projection lens 2411.

In the above configuration, since the dichroic prism does not have to be used, the price of the liquid crystal projector can be reduced.

(Embodiment 3) In this embodiment, an arrangement of a gap holding member different from that of FIG. 1 will be described.

FIG. 11A is a schematic view of a TFT substrate of a liquid crystal panel included in the liquid crystal projector of the present invention.
A source signal line driving circuit 110 is provided on a TFT substrate 1101.
3. A gate signal line driver circuit 1104 and a pixel portion 1102 are provided as shown in FIG. A sealant 1105 is provided around the TFT substrate 1101, and liquid crystal is injected from a liquid crystal injection port 1107. TFT
A gap holding member 1106 is provided on the entire surface of the substrate 1101.

Since the gap holding member is an insulator, if the gap holding member is provided on a drive circuit including the source signal line drive circuit and the gate signal line drive circuit, a capacitance is formed, and the operation of the drive circuit is slowed down. .

In this case, however, the mechanical strength of the entire liquid crystal panel is increased and the cell gap can be maintained more uniform than when a gap holding member is formed only in the pixel portion 1102.

FIG. 11B is a schematic view of a TFT substrate of a liquid crystal panel included in the liquid crystal projector of the present invention.
A gap holding member 1116 is provided on a portion of the TFT substrate 1111 other than the portion where the pixel portion 1112, the source signal line driver circuit 1113, and the gate signal line driver circuit 1114 are provided.

In this case, since the gap holding member is not provided on the pixel portion 1112, the precision of the position of the gap holding member is not required as in the case where the gap holding member is provided on the pixel portion, and the design and production are easy. Become.

Since the gap holding member 1116 is not formed on the drive circuit including the source signal line drive circuit 1113 and the gate signal line drive circuit 1114, high-speed operation of the drive circuit is achieved by forming a capacitor on the drive circuit. There is no hindrance.

FIG. 12 is a schematic view of a TFT substrate of a liquid crystal panel included in the liquid crystal projector of the present invention. TFT
The gap holding member 1 is provided in the pixel portion 1202 on the substrate 1201.
206 is provided. Then, the protective film 1205 includes the source signal line driving circuit 1203 and the gate signal line driving circuit 1
204 so as to cover the pixel portion 1202.

Since the gap holding member is an insulator, if the gap holding member is provided on a drive circuit including the source signal line drive circuit and the gate signal line drive circuit, a capacitance is formed, and the operation of the drive circuit is slowed down. .

However, the protective film 1205 also serves as a sealing material, and has an effect of increasing the mechanical strength of the liquid crystal panel by covering the source signal line driving circuit 1203 and the gate signal line driving circuit 1204. Can be.

The protection film 1205 is formed by the gap holding member 120.
6 can be formed simultaneously. In this case, it is not necessary to newly form a sealing material, so that the number of steps can be reduced.

The present invention is not limited to the embodiment. The position and number of the gap holding members 1206 may be determined so that the cell gap can be held and display is not hindered.

(Embodiment 4) In this embodiment, a method of driving a liquid crystal panel used in the present invention will be described.

FIG. 13 is a top view of the active matrix type liquid crystal panel according to the present invention. In FIG. 13, 13
Reference numeral 01 denotes a TFT substrate, and the source signal line driving circuit 130
3 and a gate signal line driving circuit 1304 have a circuit TFT (not shown),
2 is a pixel TFT arranged in a matrix (not shown)
have. Note that a glass substrate or the like is used as the TFT substrate 1301.

In the pixel portion 1302, a source signal line (not shown) connected to the source signal line driver circuit 1303 and a gate signal line (not shown) connected to the gate signal line driver circuit 1304 are provided. Intersect. A region surrounded by the source signal line and the gate signal line is a pixel (not shown).

The image signal sampled by the timing signal in the source signal line driving circuit 1303 is supplied to the source signal line. The image signal input to the source signal line is selected by a pixel TFT and written to a predetermined pixel electrode. The pixel TFT operates according to a selection signal input from the gate signal line driver circuit 1304 through the gate signal line.

(Embodiment 5) Here, the pixel TFT in the pixel portion
In addition, a method for manufacturing circuit TFTs of driving circuits (a source signal line driving circuit, a gate signal line driving circuit, and the like) provided around the pixel portion over the same substrate will be described in detail according to the process. However, a CMOS circuit and an n-channel TFT will be illustrated for the sake of simplicity.

In FIG. 19A, reference numeral 6001 denotes a substrate having heat resistance, which may be a quartz substrate, a silicon substrate, a ceramic substrate, or a metal substrate (typically, a stainless steel substrate). Whichever substrate is used, a base film (preferably, an insulating film containing silicon as a main component) may be provided as necessary.

Next, 20 to 150 nm (preferably 30 nm)
Semiconductor film having an amorphous structure with a thickness of
It is formed by a known method such as a plasma CVD method or a sputtering method. In this embodiment, an amorphous silicon film is formed to a thickness of 53 nm by a plasma CVD method. As the semiconductor film having an amorphous structure, there are an amorphous semiconductor film and a microcrystalline semiconductor film, and a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film may be used. In the case of forming a base film, the base film and the amorphous silicon film can be formed by the same film formation method, and thus both may be formed continuously. After the formation of the base film, it is possible to prevent the surface from being contaminated by not once exposing it to the atmosphere, thereby reducing the variation in the characteristics of the TFT to be manufactured and the fluctuation of the threshold voltage.

Then, a crystalline silicon film 6002 is formed from the amorphous silicon film by using a known crystallization technique. For example, a laser crystallization method or a thermal crystallization method (solid phase growth method) may be applied.
According to the technique disclosed in Japanese Patent Application Laid-Open No. 652/652, a crystalline silicon film 6002 was formed by a crystallization method using a catalytic element.

A solution containing nickel (Ni) as a catalyst element for promoting crystallization of the amorphous silicon film was applied by spin coating to form a Ni-containing layer. Also,
As a catalyst element, in addition to nickel, cobalt (C
o), iron (Fe), palladium (Pd), platinum (P
t), copper (Cu), gold (Au) or the like can be used.

In the step of adding the catalyst element, an ion implantation method using a resist mask or a plasma doping method can be used. In this case, the reduction of the occupied area of the addition region and the control of the growth distance of the lateral growth region are facilitated, so that this is an effective technique when configuring a miniaturized circuit.

Prior to the crystallization step, depending on the amount of hydrogen contained in the amorphous silicon film, a temperature of 400-500 ° C.
It is desirable to perform heat treatment for about an hour to reduce the content of hydrogen to 5 atom% or less before crystallization. After the step of adding the catalyst element is completed, hydrogen is removed at 450 ° C. for about 1 hour, and then 500 to 700 ° C. (typically 550 to 650) in an inert atmosphere, a hydrogen atmosphere, or an oxygen atmosphere.
C.) for 4 to 24 hours to crystallize the amorphous silicon film. In the present embodiment, 6
A heat treatment was performed at 00 ° C. for 12 hours to crystallize the amorphous silicon film.

When the amorphous silicon film is crystallized, rearrangement of atoms occurs and the film becomes denser. Therefore, the thickness of the crystalline silicon film to be formed is equal to the thickness of the original amorphous silicon film (in this embodiment, 53 nm). (FIG. 19A).

A 130 nm-thick protective oxide film 6003 made of a silicon oxide film is formed on the crystalline silicon film 6002.
Was formed. Then, an opening 6004 was formed in the protective oxide film 6003 in order to form a gettering region in the crystalline silicon film 6002. (FIG. 19B)

A resist mask 6005 was formed to cover the opening 6004 and the portion of the crystalline silicon film 6002 where the p-channel TFT was to be formed. Then, in order to control the threshold voltage, a portion of the crystalline silicon film 6002 where the n-channel TFT is formed is doped with boron (B) as an impurity imparting p-type. The doping was performed at an acceleration voltage of about 30 keV, and the concentration of boron (B) was adjusted to be about 5 × 10 ^{17 to} 5 × 10 ¹⁸ atoms / cm ³ . In this embodiment, the concentration of boron (B) is set to 1 × 10 ¹⁸ atoms / cm ³ .
Boron (B) may be added by an ion doping method, or may be added simultaneously with the formation of the amorphous silicon film. Then, depending on the characteristics of the crystalline silicon film 6002, phosphorus (P) may be added instead of boron (B) in order to control the threshold voltage. Although the addition of boron (B) here is not necessarily required, a portion (channel doping portion) 6006 of the crystalline silicon film 6002 to which boron (B) is added can set the threshold voltage of the n-channel TFT within a predetermined range. It was preferable to form to fit. (FIG. 19C)

After removing the resist mask 6005, phosphorus is doped to remove nickel in the crystalline silicon film 6002. Then, the opening 60
From 04, the crystalline silicon film 6002 is doped with phosphorus to form a gettering region 6007. At this time, the acceleration voltage for doping and the thickness of the protective oxide film 6003 made of an oxide film are optimized so that phosphorus does not substantially penetrate the protective oxide film 6003.

In the doping, the concentration of phosphorus (P) is 1 × 10
^It was adjusted to be about ²⁰ to 1 × 10 ²¹ atoms / cm ³ . In this embodiment, the concentration of phosphorus (P) is 5 × 10 ²⁰
The ion doping apparatus was used to adjust the concentration to atoms / cm ³ .

The acceleration voltage during ion doping is 10
kev. At an acceleration voltage of 10 keV, phosphorus can hardly pass through when the thickness of the protective oxide film 6003 is 100 nm or more.

After that, in a nitrogen atmosphere at 600.degree.
Thermal annealing was performed for 2 hours (12 hours in this embodiment) to perform gettering of the nickel element. The heating causes nickel to be attracted to the phosphorus. At a temperature of 600 ° C., phosphorus atoms hardly move in the film, while nickel atoms can move a distance of several hundred μm or more. From this, it can be understood that phosphorus is one of the most suitable elements for gettering nickel. (FIG. 19D)

Next, the gettering region 6007 is removed by etching using the protective oxide film 6003 as a mask.
(FIG. 20A)

After removing the protective oxide film 6003 (FIG. 20B), the oxide film 600 made of a silicon oxide film is formed on the substrate 6001 so as to cover the amorphous silicon film 6002.
8a was formed. In this embodiment, it is formed with a thickness of 20 nm. (FIG. 20 (C))

Next, by ashing the crystalline silicon film 6003 in an atmosphere of an oxidizing gas, the density of silicon of the crystalline silicon film 6003 was increased and the film was made dense. In this embodiment, thermal oxidation was performed at 950 ° C. in an oxygen atmosphere to reduce the thickness of the crystalline silicon film 6003 by about 15 nm. (FIG. 20 (D))

After heat treatment, the thickness of which has been increased by thermal oxidation, oxide film 6008b is removed (FIG. 21A), and semiconductor films 6010 and 6060 are patterned by patterning.
11, 6012 were formed. (FIG. 21 (B))

Then, the semiconductor films 6010, 6011, 6
A first gate insulating film 6013 is formed to cover 012. Typically, a first gate insulating film 6013 made of a silicon oxide film or a silicon nitride film is formed to a thickness of 5 to 200 nm.
(Preferably 100 to 150 nm). In this embodiment, the first gate insulating film 6013 made of a silicon oxide film or a film containing silicon oxide as a main component has a thickness of 40 nm. (FIG. 21 (C))

Next, a part of the first gate insulating film 6013 was etched using the resist mask 6014 to expose a part of the semiconductor film 6012. Then, an impurity region (Cs region) 6015 to be a part of Cs was formed by doping with phosphorus. The doping was performed at an acceleration voltage of about 10 keV, and the concentration of phosphorus (P) was adjusted to be about 1 × 10 ¹⁹ to 1 × 10 ²⁰ atoms / cm ³ . In this embodiment, the concentration of phosphorus (P) is 5
As a × 10 ¹⁹ atoms / cm ^3, it was performed using an ion doping apparatus. (FIG. 21D)

After removing the resist mask 6014, a second gate insulating film 6016 was formed. Typically, the second
The thickness of the gate insulating film 6016 may be 5 to 200 nm (preferably 100 to 150 nm). In this embodiment, the second gate insulating film 6016 made of a silicon nitride film is formed so as to have a thickness of 20 nm. (FIG. 22
(A))

Then, a first conductive film 6017 and a second conductive film 6018 were sequentially formed. Although the gate electrode has a multilayer structure in this embodiment, the gate electrode may be formed as a single layer.

The first conductive film 6017 is a crystalline silicon film having an n-type impurity, and is 150 nm thick by using the CVD method.
m. The second conductive film 6018 is tungsten silicide and is formed with a thickness of 150 nm by sputtering. (FIG. 22 (B))
In this case, although the resistance is slightly higher than using a metal film,
The stacked structure of the metal silicide film and the silicon film is effective because it has high heat resistance and is resistant to oxidation. Note that the first conductive film 6017 may be formed using tantalum nitride (TaN), tungsten nitride (WN), titanium nitride (TiN), molybdenum nitride (MoN), tungsten silicide, titanium silicide, or molybdenum silicide.
The conductive film 6022 is formed using tantalum (Ta), titanium (Ti),
An element selected from molybdenum (Mo) and tungsten (W), an alloy containing the above element as a main component, or an alloy film combining the above elements (typically, a Mo—W alloy film, M
(o-Ta alloy film).

Next, the first conductive film 6017 and the second conductive film 6
018 is patterned to form a gate electrode 6020 of a p-channel TFT and a gate electrode 60 of an n-channel TFT.
21, 6022 and a Cs electrode 6023 were formed. (Figure 2
2 (C))

Then, the gate electrodes 6020, 6021, 6
022, a part of the semiconductor films 6010, 6011 and the semiconductor film 6012 is doped with an impurity imparting n-type by using the Cs electrode
24 to 6029 were formed. Phosphorus (P) or arsenic (As) may be used as the impurity for imparting n-type. In this case, phosphine (PH ₃ ) is added to add phosphorus (P).
The ion doping method using is applied. The doping is performed at an acceleration voltage of about 40 keV and the concentration of phosphorus (P) is 5 × 1.
It was adjusted to be about 0 ^{17 to} 5 × 10 ¹⁸ atoms / cm ³ . In this embodiment, the impurity regions 6024 to 602
The phosphorus (P) concentration of 9 is 1 × 10 ¹⁸ atoms / cm ³
Was performed using an ion doping apparatus.
In this specification, the impurity region 6024 formed here is used.
The concentration of the impurity imparting n-type contained in ６０6029 is represented by (n ⁻ ). (FIG. 22 (D))

Next, a semiconductor film 6 to be a p-channel type TFT
010 and a semiconductor film 601 to be an n-channel TFT
1, 6012 so as to cover a part of the resist mask 603.
0, 6031 and 6032 were formed. Then, a part of the semiconductor films 6011 and 6012 was doped with an impurity imparting n-type using the resist masks 6030, 6031 and 6032 to form impurity regions 6033 to 6036.

The formation of the impurity regions 6033 to 6036
Phosphine (PH_Three) Using ion doping method
Doping is performed at an acceleration voltage of about 40 keV,
The concentration of (P) is 5 × 10¹⁹~ 5 × 10²⁰atoms / c
m^ThreeIt was adjusted to the extent. In this embodiment, the impurities
The concentration of phosphorus (P) in the regions 6033 to 6036 is 1 × 10
²⁰atoms / cm^ThreeIt was made to become. In this specification
Are formed in the impurity regions 6033 to 6036 formed here.
The concentration of the impurity imparting n-type contained therein is (n⁺) And table
You. (FIG. 23 (A))

The resist masks 6030 to 6032 were removed, and the portion to be an n-channel TFT and the portion to be Cs were covered with a resist mask 6039. And the semiconductor film 6
010 was doped with an impurity imparting p-type. In this embodiment, the impurity regions 6037 and 6038 are formed by an ion doping method using diborane (B ₂ H ₆ ). The doping was performed at an acceleration voltage of about 40 keV, and the concentration of boron (B) was adjusted so as to be about 5 × 10 ^{19 to} 5 × 10 ²⁰ atoms / cm ³ . In this embodiment, the impurity region 603 is used.
The concentration of boron (B) of 7,6038 is 1 × 10 ²⁰ atom
ms / cm ³ . In this specification, the concentration of the impurity element imparting p-type contained in the impurity regions 6037 and 6038 formed here is expressed as (p ⁺ ). Although the impurity regions 6037 and 6038 contain phosphorus (P) or boron (B) already added in the previous step,
Since boron (B) is added at a sufficiently high concentration, p-type conductivity is ensured, and the characteristics of the TFT are not affected at all. (FIG. 23 (B))

After removing the resist mask 6039, an insulating film 6040 was formed. The insulating film 6040 is made of a silicon nitride film and has a thickness of 70 nm by a CVD method. (FIG. 23 (C))

Next, by heating in a nitrogen atmosphere at 850 ° C. for 30 minutes, the impurities contained in the impurity regions diffuse in the semiconductor films 6010 to 6012 and spread to the lower portions of the gate electrodes 6020 to 6022. Gate electrode 6
Impurity region 6041 located below 0200 to 6022
６０6046 is referred to as a Lov region. Also, the gate electrode 60
Impurity regions (source regions or drain regions) 6033 to 6036
The impurity regions 6047 to 6050 in contact with are referred to as Lof regions. Impurity regions 6033 to 6038, 6041
~ 6050 are activated by the heat treatment. (Figure 2
4 (A))

Next, a first interlayer insulating film 6052 made of silicon oxide or silicon oxynitride is formed to a thickness of 500 to 1500 n.
m. In this embodiment, silicon oxynitride is used to have a thickness of 1000 nm. After that, contact holes reaching the source or drain regions 6033 to 6038 are formed, and the source wirings 6053, 6055,
6057 and drain wirings 6054, 6056, 605
8 is formed. Although not shown, in the present embodiment, the source wiring and the drain wiring are formed of a Ti film 60 nm, a nitrogen-containing Ti film 40 nm, and an Si-containing aluminum film 3.
A four-layer laminated film was formed by successively forming a 00 nm film and a 100 nm Ti film by a sputtering method. (FIG. 24 (B))

Next, source wirings 6053, 6055, and 60
A passivation film 6060 made of a silicon nitride film is formed with a thickness of 220 nm on the first interlayer insulating film 6052 so as to cover the drain wirings 6054, 6056, and 6058. (FIG. 24C) Then, a second interlayer insulating film 6061 is formed so as to cover the passivation film 6060. This second interlayer insulating film 6061 is made of an acrylic film and has a thickness of 800 nm.

Second interlayer insulating film 606 made of an acrylic film
After the substrate 1 is heated at 150 ° C. for 0.3 hours, a Ti film or a light-shielding film 6062 mainly composed of Ti and having a thickness of 100 nm is formed on the second interlayer insulating film 6061. (FIG. 25A)

The second light-shielding film 6062 is
A third interlayer insulating film 6063 was formed over the interlayer insulating film 6061. The third interlayer insulating film 6063 is made of an acrylic film,
Its thickness is formed between 500 nm and 1000 nm. In this embodiment, the thickness of the third interlayer insulating film 6063 is set to 800 nm.
And (FIG. 25 (B))

A contact hole is formed in the third interlayer insulating film 6063, and then a pixel electrode 6064 is formed. In this embodiment, the thickness of the pixel electrode 6064 is 2.8 μm
And The pixel electrode 6064 is electrically connected to a drain wiring 6058 through a contact hole. The pixel electrode 6064 may be formed using a transparent conductive film. (FIG. 25
(C))

As described above, the semiconductor device of the present invention has various features in the driver circuit and the pixel matrix circuit. A bright and high-definition image can be obtained by a synergistic effect of these, and the operation performance and the reliability are improved. Obtain a high electro-optical device. Then, a high-performance electronic device in which such an electro-optical device is mounted as a component is obtained.

(Embodiment 6) In this embodiment, the cell gap accuracy of a liquid crystal panel will be described.

The following four types of liquid crystal panels were produced. 1) The gap is kept on the TFT substrate by the method described in the first embodiment.
Forming a microlens array on the opposing substrate.
A liquid crystal panel having an a. 2) A gap is maintained on the TFT substrate by the method described in the first embodiment.
Holding member and having no microlens array
Liquid crystal panel. 3) Instead of forming a gap holding member on a TFT substrate
And a microphone on the opposite substrate.
A liquid crystal panel having a lens array. 4) Instead of forming a gap holding member on a TFT substrate
And a microphone on the opposite substrate.
A liquid crystal panel without a lens array. Note that this embodiment
In this case, the height of the gap holding member is 3.2 μm, and the arrangement density is 50
Pieces / mm ^TwoThe spherical spacers are 3.2 μm in diameter and arranged
Density 50 pieces / mm^TwoAnd

Table 1 summarizes the cell gap accuracy of these four types of liquid crystal panels, the cell gap control method for color unevenness, and the influence of the presence or absence of a microlens array.

[0202]

[Table 1]

It can be seen that when the cell gap control method is the same, the cell gap accuracy is reduced when the microlens array is provided. This is because the provision of the microlens array substrate causes the counter substrate to be warped, and this warp affects the cell gap. In the conventional method, when there is no microlens array substrate, the cell gap unevenness is ± 0.2 μm, and no color unevenness occurs. On the other hand, when a microlens array substrate is provided, ±
It was 0.35 μm, and color unevenness occurred. Therefore, when a microlens array is provided, a more accurate cell gap control technique is required.

It can be seen that, in the present invention, even if a microlens array is provided, the cell gap accuracy is high, the influence of substrate warpage can be further suppressed, and good display quality can be obtained.

(Embodiment 7) In this embodiment, another example of the arrangement of the gap holding members, which is different from that shown in FIG.

In this embodiment, the gap holding member is located near the center of the pixel opening, and the optical axis of the microlens (the center of light collection).
It was provided at the position furthest away from. FIG. 26 shows an enlarged view of the pixel portion. In this embodiment, the pixel size is 18 μm
× 18 μm, the width of the light shielding portion in the X direction is about 3 μm at the narrowest point, and the width of the light shielding part in the Y direction is about 9 μm at the narrowest point.

FIG. 27 is a diagram showing the light focusing characteristics of the microlens. The horizontal axis indicates the distance (μm) from the optical axis of the microlens (the center of light collection), and the vertical axis indicates the light intensity (relative value) when the light intensity at the center of light collection is 100%.

In FIG. 27, a region where the light intensity exceeds 10% is called an effective light beam converging region. In FIG. 27, the light intensity fluctuates with a gentler gradient outside the effective light beam converging region than in the effective light beam converging region closer to the light converging region. Understand.
That is, if the light intensity is 10
%, The light use efficiency sharply decreases as it approaches the light-collecting center after passing through the region of%.

For example, when a spacer having a diameter of 3 μm is placed in a region where the light intensity is 10% or less (for example, between 6 and 9 μm and between −9 and −6 μm in FIG. In the area to be enlarged (between 3 to 6 μm in FIG.
Compared to the case where the antenna is arranged at a distance of -3 μm), in the latter case, the use efficiency is reduced by 6 times or more of the former.

Therefore, when the gap holding member is arranged in the light condensing area of the microlens, the light intensity becomes 10
% Or less. But,
If the light-shielding region is narrow and the gap holding member protrudes from the light-shielding region, or if the gap-holding member cannot be accommodated on the light-shielding region due to design and manufacturing reasons, the portion that protrudes from the light-shielding region is Light intensity is 10%
What is necessary is just within the area | region below.

In consideration of the alignment disorder of the liquid crystal by the gap holding member, the bonding accuracy, and the spacer forming accuracy, it is more desirable to dispose the gap holding member in a region where the light intensity is 5% or less.

As described above, the light intensity is preferably 10%
Hereinafter, by providing the gap holding member in a region that is more preferably 5% or less, the contrast is not substantially reduced due to the disorder of the orientation of the liquid crystal around the gap holding member, and the displayed image is hardly disturbed. 18 μm × 18 μm which is the pixel size of the present embodiment
No difference in contrast between the presence and absence of the gap holding member is observed in the liquid crystal panel having the size of.

In the case of the present embodiment, the contrast was further improved as compared with the case shown in FIG. Therefore, in the case where the region through which light does not pass is small in terms of improving the contrast, the light intensity of the gap holding member is set to 1/10 to 1/20 with respect to the condensing peak of the microlens.
It is more desirable to provide them in the following regions.

The configuration of this embodiment can be used together with the configuration shown in FIG. Further, even when the microlens array is provided on the TFT substrate, it is desirable to arrange the gap holding members according to the same rule.

(Embodiment 8) In the present invention, the substrate or the insulating film directly formed on the substrate may be planarized by using CMP (Chemical Mechanical Polishing). CMP polishing can be performed using a known method.

In this embodiment, polishing is performed using a mixture of a silica sol and an electrolytic solution. In the electrolytic solution, 1
Polishing is performed by applying a pressure of 00 kg / cm ² from the polishing pad. The pressure during this polishing is 50 kg / cm ^{2 to} 150
It can be selected from a range of about kg / cm ² . Polishing is performed with a gap between the polishing surface and the polishing pad being 0.1 μm.

In this embodiment, since the substrate or the insulating film directly formed on the substrate is flattened by the above structure, the two substrates of the liquid crystal panel can be more uniformly controlled with a desired value of the cell gap. Can be. Therefore, even if the depth of focus becomes shallow due to the miniaturization of the microlens array, it is possible to suppress the deterioration of display quality due to defects such as display unevenness and brightness unevenness of the liquid crystal projector.

[0218]

According to the above-described structure, the present invention makes it possible to arrange the gap holding member at a desired position. And it became possible to control the cell gap more uniformly than when a spherical spacer was used.

The gap holding member is formed on a contact portion between the pixel electrode of the pixel and a wiring (drain wiring) connected to the drain region of the pixel TFT. The contact portion between the pixel electrode and the drain wiring is not located in the opening of the pixel (the region through which visible light used for actual display is transmitted). Since the liquid crystal material is separated from the region through which the visible light is transmitted to such an extent that the orientation of the liquid crystal material is not disturbed, disturbance (disclination) of image display hardly occurs.

The gap holding member enables the two substrates of the liquid crystal panel to be controlled uniformly with a desired value of the cell gap. Therefore, even if the depth of focus becomes shallow due to miniaturization of the microlens array. In addition, it is possible to suppress deterioration of display quality due to defects such as display unevenness and luminance unevenness of the liquid crystal projector.

According to the present invention, it is possible to increase the brightness of an image without increasing the brightness of a light source, and to realize a thinner and lighter liquid crystal projector, as well as a higher definition, a higher image quality, and a higher brightness. I made it.

[Brief description of the drawings]

FIG. 1 is a schematic view of a TFT substrate of the present invention.

FIG. 2 is a schematic diagram of a pixel of the present invention.

FIG. 3 is an enlarged view of a pixel portion of the present invention.

FIG. 4 is an enlarged view of a pixel portion of the present invention.

FIG. 5 is a diagram of a microlens array used in the present invention.

FIG. 6 is a diagram of a microlens array used in the present invention.

FIG. 7 is a perspective view of a cross section of the liquid crystal panel of the present invention.

FIG. 8 is a diagram of a three-panel liquid crystal projector having the liquid crystal panel of the present invention.

FIG. 9 is a view showing a manufacturing process of a gap holding member.

FIG. 10 is a diagram of a three-panel liquid crystal projector having the liquid crystal panel of the present invention.

FIG. 11 is a top view of a TFT substrate of the present invention.

FIG. 12 is a top view of a TFT substrate of the present invention.

FIG. 13 is a block diagram of a TFT substrate.

FIG. 14 is a diagram of a three-panel liquid crystal projector using a conventional liquid crystal panel.

FIG. 15 is an enlarged view of a pixel of a liquid crystal panel.

FIG. 16 is a cross-sectional view of a liquid crystal panel having a microlens array.

FIG. 17 is a cross-sectional view of a microlens.

FIG. 18 illustrates disclination in a pixel.

FIG. 19 is a diagram showing a manufacturing process of a TFT.

FIG. 20 illustrates a manufacturing process of a TFT.

FIG. 21 is a diagram showing a manufacturing process of a TFT.

FIG. 22 illustrates a manufacturing process of a TFT.

FIG. 23 illustrates a manufacturing process of a TFT.

FIG. 24 illustrates a manufacturing process of a TFT.

FIG. 25 illustrates a manufacturing process of a TFT.

FIG. 26 is an enlarged view of a pixel portion.

FIG. 27 is a diagram showing light-collecting characteristics of a microlens.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 101 TFT substrate 102 Pixel part 103 Source signal line drive circuit 104 Gate signal line drive circuit 105 Sealing material 106 Liquid crystal injection port 107 Gap holding member 108 Pixel electrode 109 Drain wiring 110 Contact part 111 Black matrix (BM) 112 Opening 113 Pixel

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H04N 5/66 102 H04N 5/74 K 5/74 9/31 C 9/31 G02F 1/136 500 (72 ) Inventor Kazuhiko Tamai 22-22 Nagaike-cho, Abeno-ku, Osaka City, Osaka, Japan (72) Inventor Yutaka Takato 22-22 Nagaike-cho, Nagano-machi, Abeno-ku, Osaka City, Osaka

Claims (30)

[Claims] A micro-lens having a first substrate, a second substrate, a liquid crystal and a plurality of gap holding members provided between the first and the second substrates, and a plurality of micro-lenses; A liquid crystal panel comprising: a lens array; and the microlens array is provided on a side of the first substrate opposite to the second substrate. 2. A semiconductor device comprising: a first substrate having a plurality of pixel electrodes; a second substrate having a counter electrode; a liquid crystal; a plurality of gap holding members; and a microlens array having a plurality of microlenses. A liquid crystal panel, wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. The liquid crystal panel, wherein the microlens array is provided on a side of the first substrate opposite to the side of the second substrate. 3. A semiconductor device comprising: a first substrate having a plurality of pixel electrodes; a second substrate having a counter electrode; a liquid crystal; a plurality of gap holding members; and a microlens array having a plurality of microlenses. A liquid crystal panel, wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. The liquid crystal panel, wherein the microlens array is provided on a side of the second substrate opposite to the first substrate. 4. A semiconductor device comprising: a first substrate having a plurality of pixel electrodes; a second substrate having a counter electrode; a liquid crystal; a plurality of gap holding members; and a microlens array having a plurality of microlenses. A liquid crystal panel, wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. A liquid crystal panel, wherein a microlens array is provided on a surface of the second substrate opposite to a surface facing the first substrate. 5. A semiconductor device comprising: a first substrate having a plurality of pixel electrodes; a second substrate having a counter electrode; a liquid crystal; a plurality of gap holding members; and a microlens array having a plurality of microlenses. A liquid crystal panel, wherein the first substrate and the second substrate face each other with the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members interposed therebetween. A liquid crystal panel, wherein a microlens array is provided on a surface of the first substrate opposite to a surface facing the second substrate. 6. A microlens array having a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a plurality of microlenses. A liquid crystal panel comprising: the first substrate and the second substrate, wherein the plurality of thin film transistors, the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members are provided. A liquid crystal panel, wherein the microlens array is provided on a side of the first substrate opposite to the second substrate. 7. A microlens array having a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a plurality of microlenses. A liquid crystal panel comprising: the first substrate and the second substrate, wherein the plurality of thin film transistors, the plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members are provided. A liquid crystal panel, wherein the microlens array is provided on a side of the second substrate opposite to the first substrate. 8. A microlens array having a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a plurality of microlenses. And wherein the plurality of thin film transistors control a potential applied to the plurality of pixel electrodes, and wherein the first substrate and the second substrate include the plurality of thin film transistors; The plurality of pixel electrodes, the counter electrode, the liquid crystal, and the plurality of gap holding members are interposed therebetween, and are opposed to a surface of the second substrate facing the first substrate. A microlens array provided on the side surface, wherein the plurality of microlenses are provided in one-to-one correspondence with the plurality of pixels, respectively. panel. 9. A microlens array having a first substrate having a plurality of thin film transistors and a plurality of pixel electrodes, a second substrate having a counter electrode, a liquid crystal, a plurality of gap holding members, and a plurality of microlenses. And wherein the plurality of thin film transistors control a potential applied to the plurality of pixel electrodes, and wherein the first substrate and the second substrate include the plurality of thin film transistors; The plurality of pixel electrodes, the opposite electrode, the liquid crystal, and the plurality of gap holding members are interposed therebetween, and are opposed to each other, and the first substrate is opposite to a surface facing the second substrate. A microlens array provided on the side surface, wherein the plurality of microlenses are provided in one-to-one correspondence with the plurality of pixels, respectively. panel. 10. The thin film transistor according to claim 6, wherein each of the plurality of thin film transistors has a semiconductor film including a source region, a drain region, and a channel formation region. The liquid crystal panel, wherein each of the source region or the drain region has a contact portion connected to the plurality of pixel electrodes, and the plurality of gap holding members are provided on the contact portion. 11. A liquid crystal panel according to claim 1, wherein said plurality of gap holding members are cylindrical. 12. A liquid crystal panel according to claim 1, wherein said plurality of gap holding members have an elliptical column shape. 13. A liquid crystal panel according to claim 1, wherein said plurality of gap holding members have a polygonal column shape. 14. The liquid crystal panel according to claim 1, wherein the side surfaces of the plurality of gap holding members are tapered. 15. The gap holding member according to claim 1, wherein the plurality of gap holding members are polyimide,
A liquid crystal panel comprising acrylic, polyamide, polyimide amide or epoxy resin. 16. A liquid crystal panel according to claim 1, wherein said plurality of gap holding members include an ultraviolet curable resin or a thermosetting resin. 17. The liquid crystal panel according to claim 1, wherein the liquid crystal panel has a diagonal of 1 inch or less. 18. The illuminance according to claim 1, wherein the plurality of gap holding members have an illuminance outside the effective luminous flux converging area of the microlens, that is, with respect to the converging peak illuminance of the microlens. A liquid crystal panel, wherein the liquid crystal panel is provided in an area of / 10 or less. 19. The illuminance according to claim 1, wherein the plurality of gap holding members have an illuminance outside the effective luminous flux converging area of the microlens, that is, the illuminance is 1 with respect to the converging peak illuminance of the microlens. A liquid crystal panel, wherein the liquid crystal panel is provided in a region where / 20 or less. 20. A white light source; separating means for separating white light emitted from the white light source into a plurality of lights having different colors; a plurality of liquid crystal panels respectively corresponding to the plurality of lights; A first optical means for irradiating the plurality of liquid crystal panels respectively, and a second optical means for condensing a plurality of transmitted lights transmitted through the plurality of liquid crystal panels, At least one of the plurality of liquid crystal panels has a first substrate and a second substrate, and the plurality of lights are applied to the liquid crystal panel from the second substrate side; A plurality of gap holding members are provided between the first substrate and the second substrate, and a microlens array is provided on a side of the second substrate to which the plurality of lights are irradiated. LCD Pro Ekuta. 21. A white light source; separating means for separating white light emitted from the white light source into a plurality of lights having different colors; a plurality of liquid crystal panels respectively corresponding to the plurality of lights; A first optical means for irradiating the plurality of liquid crystal panels respectively, and a second optical means for condensing a plurality of transmitted lights transmitted through the plurality of liquid crystal panels, At least one of the plurality of liquid crystal panels has a first substrate and a second substrate, and the plurality of lights are applied to the liquid crystal panel from the second substrate side; A plurality of pixels are provided on the substrate, the plurality of pixels each have a pixel electrode and a thin film transistor connected to the pixel electrode, and the first substrate and the second substrate Multiple in between A cap holding member is provided; a microlens array is provided on a side of the second substrate to which the plurality of lights are irradiated; A liquid crystal projector, wherein the liquid crystal projector is provided in one-to-one correspondence with the pixels. 22. A white light source; separating means for separating white light emitted from the white light source into a plurality of lights having different colors; a plurality of liquid crystal panels respectively corresponding to the plurality of lights; A first optical means for irradiating the plurality of liquid crystal panels respectively, and a second optical means for condensing a plurality of transmitted lights transmitted through the plurality of liquid crystal panels, At least one of the plurality of liquid crystal panels has a first substrate and a second substrate, and the plurality of lights are applied to the liquid crystal panel from the second substrate side; A pixel portion having a plurality of pixels is provided over the substrate, wherein the plurality of pixels each include a pixel electrode and a thin film transistor connected to the pixel electrode; Between boards Is provided with a plurality of gap holding members, a microlens array is provided on the side of the second substrate to which the plurality of light is irradiated, a plurality of microlenses of the microlens array, A liquid crystal projector, wherein each of the plurality of pixels is provided in one-to-one correspondence. 23. The thin film transistor according to claim 21, wherein the thin film transistor included in the plurality of pixels includes a semiconductor film including a source region, a drain region, and a channel formation region, respectively. The liquid crystal projector, wherein the region is connected to the plurality of pixel electrodes at a contact portion, and the plurality of gap holding members are provided on the contact portion. 24. Any one of claims 20 to 23
2. The liquid crystal projector according to claim 1, wherein the plurality of gap holding members are cylindrical. 25. One of claims 20 to 23.
3. The liquid crystal projector according to claim 1, wherein the plurality of gap holding members have an elliptical column shape. 26. One of claims 20 to 23.
3. The liquid crystal projector according to claim 1, wherein the plurality of gap holding members have a polygonal prism shape. 27. Any one of claims 20 to 26.
3. The liquid crystal projector according to claim 1, wherein the side surfaces of the plurality of gap holding members are tapered. 28. One of claims 20 to 27.
3. The liquid crystal projector according to claim 1, wherein the plurality of gap holding members include polyimide, acrylic, polyamide, polyimide amide, or epoxy resin. 29. Any one of claims 20 to 28
3. The liquid crystal projector according to claim 1, wherein the plurality of gap holding members include an ultraviolet curable resin or a thermosetting resin. 30. Any one of claims 20 to 29
3. The liquid crystal projector according to claim 1, wherein the liquid crystal panel has a diagonal of 1 inch or less.