JP2001210222A - Electron emission device - Google Patents
Electron emission deviceInfo
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- JP2001210222A JP2001210222A JP2000020872A JP2000020872A JP2001210222A JP 2001210222 A JP2001210222 A JP 2001210222A JP 2000020872 A JP2000020872 A JP 2000020872A JP 2000020872 A JP2000020872 A JP 2000020872A JP 2001210222 A JP2001210222 A JP 2001210222A
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- Prior art keywords
- particulate material
- boron
- metal body
- electron
- thin film
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体からの電子
放出を利用する電子放出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron emission device utilizing electron emission from a semiconductor.
【０００２】[0002]
【従来の技術】従来、金属やシリコンを用いて尖塔形状
を作製したスピント型と呼ばれている電子放出素子が研
究開発されている。また、近年、負性電子親和力を有す
るダイヤモンドや窒化ホウ素薄膜を用いたフィールドエ
ミッタの研究も進められている。2. Description of the Related Art Heretofore, research and development have been made on an electron-emitting device called a Spindt type in which a spire shape is formed using metal or silicon. In recent years, field emitters using diamond or boron nitride thin films having a negative electron affinity have been studied.
【０００３】[0003]
【発明が解決しようとする課題】フィールドエミッタに
は、低電圧動作、高電流密度動作、そして長寿命動作が
要求される。低電圧化や高電流密度化を達成するために
は、フィールドエミッタ用材料として、小さい仕事関数
を有する金属や、小さい電子親和力または負性電子親和
力を有する半導体が注目されている。また、長寿命化の
ためには、硬質で安定な材料が必要である。The field emitter is required to operate at a low voltage, operate at a high current density, and operate for a long time. In order to achieve a lower voltage and a higher current density, a metal having a small work function and a semiconductor having a small electron affinity or a negative electron affinity have attracted attention as a material for a field emitter. In addition, a hard and stable material is required to extend the life.
【０００４】これまで、金属やシリコンを尖塔型の形状
に加工し、その近傍に引き出し電極を作製することによ
って、低電圧動作が図られている。そして、これらに優
る電子放出特性が負性電子親和力を持つダイヤモンドや
窒化物半導体によって得られることが見出されている。
近年、負性電子親和力を持つ窒化ホウ素薄膜においてダ
イヤモンドに匹敵する電子放出特性が示されているが、
窒化ホウ素薄膜においては、表面が平坦で電界集中因子
も小さく、さらに低電圧高電流密度動作を実現するのは
困難であった。Heretofore, low voltage operation has been achieved by processing metal or silicon into a spire shape and forming an extraction electrode in the vicinity thereof. It has been found that superior electron emission characteristics can be obtained by diamond or nitride semiconductors having a negative electron affinity.
In recent years, boron nitride thin films with negative electron affinity have shown electron emission characteristics comparable to diamond,
In the boron nitride thin film, the surface is flat, the electric field concentration factor is small, and it is difficult to realize a low voltage and high current density operation.
【０００５】本発明は、上記課題を解決し、ホウ素、窒
素およびホウ素、炭素、窒素を含有する材料による電子
放出装置を提供することを目的とする。An object of the present invention is to solve the above-mentioned problems and to provide an electron-emitting device using boron, nitrogen, and a material containing boron, carbon, and nitrogen.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、請求項１に記載された発明は、導体または半導体基
板表面上に窒素とホウ素とを主要元素とした粒子状材料
が存在し、前記基板および前記粒子状材料に電気的に絶
縁して第１の金属体が設けられ、前記粒子状材料に対向
して前記第１の金属体と空間をもって第２の金属体を設
けたことを特徴とする電子放出装置である。In order to solve the above-mentioned problems, the invention described in claim 1 is characterized in that a particulate material containing nitrogen and boron as main elements is present on the surface of a conductor or a semiconductor substrate, A first metal body is provided electrically insulated from the substrate and the particulate material, and a second metal body is provided facing the particulate material with a space between the first metal body and the first metal body. This is a feature of the electron emission device.
【０００７】請求項２に記載された発明は、導体または
半導体基板に窒素とホウ素とを主要元素とした粒子状材
料が埋め込まれ、前記粒子状材料の一部が露出し、前記
基板および前記粒子状材料に電気的に絶縁して第１の金
属体が設けられ、前記粒子状材料に対向して前記第１の
金属体と空間をもって第２の金属体を設けたことを特徴
とする電子放出装置である。According to a second aspect of the present invention, a conductive or semiconductor substrate is filled with a particulate material containing nitrogen and boron as main elements, a part of the particulate material is exposed, and the substrate and the particulate material are exposed. A first metal body is provided electrically insulated from the particulate material, and a second metal body is provided facing the particulate material with the first metal body and a space. Device.
【０００８】請求項３に記載された発明は、導体または
半導体基板上に導体層または半導体層があり、前記層内
に窒素とホウ素とを主要元素とした粒子状材料があり、
その粒子状材料の一部が露出し、前記導体層または前記
半導体層および前記粒子状材料に電気的に絶縁して第１
の金属体が設けられ、前記粒子状材料に対向して前記第
１の金属体と空間をもって第２の金属体を設けたことを
特徴とする電子放出装置である。According to a third aspect of the present invention, there is provided a conductor or semiconductor layer on a conductor or semiconductor substrate, and a particulate material containing nitrogen and boron as main elements in the layer.
A part of the particulate material is exposed and electrically insulated from the conductor layer or the semiconductor layer and the particulate material.
Wherein the second metal member is provided with a space between the first metal member and the first metal member so as to face the particulate material.
【０００９】請求項４に記載された発明は、導体または
半導体基板上に窒素とホウ素とを主要元素とした粒子状
材料が存在し、その上に窒素とホウ素とを主要元素とし
た薄膜があり、前記薄膜に電気的に絶縁して第１の金属
体が設けられ、前記粒子状材料に対向して前記第１の金
属体と空間をもって第２の金属体を設けたことを特徴と
する電子放出装置である。According to a fourth aspect of the present invention, there is provided a conductive or semiconductor substrate comprising a particulate material containing nitrogen and boron as main elements, and a thin film containing nitrogen and boron as main elements on the conductor or semiconductor substrate. Wherein a first metal body is provided electrically insulated on the thin film, and a second metal body is provided facing the particulate material with the first metal body and a space. It is a discharge device.
【００１０】請求項５に記載された本発明では、請求項
１〜４のいずれか１項に記載の電子放出装置において、
前記粒子状材料の上に形成する前記薄膜を窒素とホウ素
と炭素とを主要元素としたことを特徴とする。According to a fifth aspect of the present invention, in the electron emission device according to any one of the first to fourth aspects,
The thin film formed on the particulate material includes nitrogen, boron and carbon as main elements.
【００１１】請求項６に記載された本発明では、請求項
１〜５のいずれか１項に記載の電子放出装置において、
前記窒素と前記ホウ素と前記炭素とを主要元素とした薄
膜内でホウ素組成比または炭素組成比が変化したことを
特徴とする。According to a sixth aspect of the present invention, in the electron emission device according to any one of the first to fifth aspects,
It is characterized in that the boron composition ratio or the carbon composition ratio changes in a thin film containing nitrogen, boron and carbon as main elements.
【００１２】請求項７に記載された本発明では、前記窒
素と前記ホウ素とを主要元素とした粒子状材料にシリコ
ン、硫黄、炭素、リチウムのいずれかの不純物原子を添
加した請求項１〜６のいずれか１項に記載の電子放出装
置において、ことを特徴とする。According to the present invention, any one of silicon, sulfur, carbon, and lithium is added to the particulate material containing nitrogen and boron as main elements. The electron-emitting device according to any one of the above, characterized in that:
【００１３】請求項８に記載された本発明では、請求項
１〜７のいずれか１項に記載の電子放出装置において、
前記窒素と前記ホウ素とを主要元素とした薄膜または窒
素とホウ素と炭素とを主要元素とした薄膜にシリコン、
硫黄、炭素、リチウムの原子を添加したことを特徴とす
る。According to the present invention described in claim 8, in the electron-emitting device according to any one of claims 1 to 7,
Silicon into a thin film containing nitrogen and boron as main elements or a thin film containing nitrogen, boron and carbon as main elements,
It is characterized by adding atoms of sulfur, carbon and lithium.
【００１４】請求項９に記載された本発明では、請求項
１〜８のいずれか１項に記載の電子放出装置において、
前記粒子状材料の表面または前記粒子状材料の上に形成
された薄膜表面を水素原子で終端したことを特徴とす
る。According to a ninth aspect of the present invention, in the electron emission device according to any one of the first to eighth aspects,
The surface of the particulate material or the surface of the thin film formed on the particulate material is terminated with hydrogen atoms.
【００１５】請求項１０に記載された本発明では、請求
項１〜９のいずれか１項に記載の電子放出装置が２つ以
上のアレーからなることを特徴とする。According to a tenth aspect of the present invention, the electron emission device according to any one of the first to ninth aspects comprises two or more arrays.
【００１６】本発明の電子放出装置は、窒素とホウ素と
を主成分とする不定形の粒子状材料を基板表面に用いる
ことにより、表面での電界集中因子の向上を図り、電界
が集中する尖塔部の密度を増加させることにより、放出
電流密度の向上を図る。前記粒子状材料および基板と電
気的に絶縁して引き出し電極を設けることを特徴とし、
さらに、前記材料に対向して空間をもって電気的に絶縁
した金属体を設けることを特徴とする。According to the electron emission device of the present invention, an irregular particle material containing nitrogen and boron as its main components is used on the surface of the substrate to improve the electric field concentration factor on the surface, and the spire where the electric field is concentrated. The emission current density is improved by increasing the density of the portion. It is characterized by providing an extraction electrode electrically insulated from the particulate material and the substrate,
Further, a metal body which is electrically insulated with a space facing the material is provided.
【００１７】前記粒子状材料を基盤とし、その上への窒
化ホウ素薄膜や窒化ホウ素炭素薄膜の堆積、ドナー不純
物の添加、および前記粒子状材料表面や堆積薄膜表面の
水素原子による終端によって、低電圧動作可能な高性能
電子放出装置が実現できる。Based on the above-mentioned particulate material, a low voltage is formed by depositing a boron nitride thin film or boron nitride carbon thin film thereon, adding donor impurities, and terminating the particulate material surface or the deposited thin film surface with hydrogen atoms. An operable high-performance electron emission device can be realized.
【００１８】[0018]
【発明の実施の形態】次に、本発明の実施の形態につい
て説明する。本発明に関する窒素とホウ素とを主要元素
とした粒子状材料を高密度に基板上に固定させた電子放
出装置は、導電性基板および絶縁性基板上に作製でき
る。そして、本発明は、平面型の電子放出装置の実現に
つながり、フィールドエミッションディスプレー、電子
ビーム露光機、マイクロ波進行波管、撮像素子等、様々
な用途にキーデバイスとして応用できる。Next, an embodiment of the present invention will be described. The electron-emitting device according to the present invention in which a particulate material containing nitrogen and boron as main elements is fixed at high density on a substrate can be manufactured on a conductive substrate and an insulating substrate. The present invention leads to the realization of a flat-type electron emission device, and can be applied as a key device to various uses such as a field emission display, an electron beam exposure machine, a microwave traveling wave tube, and an imaging device.
【００１９】以下に本発明の電子放出装置の実施例につ
いて具体的に説明する。An embodiment of the electron-emitting device according to the present invention will be specifically described below.
【００２０】[0020]
【実施例１】図１は、本発明に係る電子放出装置の実施
例１を示す断面図である。実施例１の電子放出装置は、
シリコン基板１、フォトレジスト２、窒化ホウ素粒子
３、ＳｉＯX薄膜４、引き出し電極５、カソード電極６
およびアノード電極７で構成される。Embodiment 1 FIG. 1 is a sectional view showing Embodiment 1 of an electron-emitting device according to the present invention. The electron emission device of the first embodiment is
Silicon substrate 1, the photoresist 2, boron nitride particles 3, SiO X film 4, the extraction electrode 5, the cathode electrode 6
And an anode electrode 7.
【００２１】シリコン基板１は、ｎ型のシリコン半導体
の基板である。フォトレジスト２は、シリコン基板１の
一方の面（以下、表面という）に設けられている。フォ
トレジスト２として、ポジ型フォトレジストやネガ型フ
ォトレジストを用いることができる。フォトレジスト２
には、窒化ホウ素粒子３が混在している。窒化ホウ素粒
子３は、窒素とホウ素とを主要元素とした結晶粒子であ
る。引き出し電極５は、ＳｉＯX薄膜４によって絶縁さ
れた第１の金属体である。カソード電極６は、シリコン
基板１の他方の面（以下、裏面という）に設けられてい
る。アノード電極７は、引き出し電極５と空間をもって
設けられた第２の金属体である。The silicon substrate 1 is an n-type silicon semiconductor substrate. The photoresist 2 is provided on one surface (hereinafter, referred to as a surface) of the silicon substrate 1. As the photoresist 2, a positive photoresist or a negative photoresist can be used. Photoresist 2
Contains boron nitride particles 3. The boron nitride particles 3 are crystal particles containing nitrogen and boron as main elements. The extraction electrode 5 is a first metal body insulated by the SiO x thin film 4. The cathode electrode 6 is provided on the other surface (hereinafter, referred to as a back surface) of the silicon substrate 1. The anode electrode 7 is a second metal body provided with the extraction electrode 5 and a space.
【００２２】この構成の電子放出装置を次に示す手順で
作製した。つまり、図２（Ａ）に示すｎ型のシリコン基
板１の表面上に、フォトレジスト２を塗布した（図２
（Ｂ））。フォトレジスト２には、粒子の大きさが１〜
３［μｍ］の窒化ホウ素粒子３を混入させた。フォトレ
ジスト２の塗布されたシリコン基板１を、６５０［℃］
で熱処理をした。この熱処理の際、フォトレジスト２２
が炭化された。この後、その上にＳｉＯX薄膜４を５０
０［ｎｍ］形成した（図２（Ｃ））。ＳｉＯX薄膜４の
上に引き出し電極５用の金属として、Ｔｉ（２０［ｎ
ｍ］）／Ａｕ（５００［ｎｍ］）を電子ビーム蒸着法で
形成した（図２（Ｃ））。An electron-emitting device having this structure was manufactured in the following procedure. That is, a photoresist 2 was applied on the surface of the n-type silicon substrate 1 shown in FIG.
(B)). The photoresist 2 has a particle size of 1 to 1.
3 μm of boron nitride particles 3 were mixed. The silicon substrate 1 coated with the photoresist 2 is heated to 650 [° C.]
Heat treatment. During this heat treatment, the photoresist 22
Was carbonized. After this, a SiO X thin film 4 is placed on the
0 [nm] was formed (FIG. 2C). On the SiO x thin film 4, Ti (20 [n
m]) / Au (500 [nm]) was formed by an electron beam evaporation method (FIG. 2C).
【００２３】一方、シリコン基板１の裏面にアルミニウ
ムを蒸着して、オーミック接合を形成し、カソード電極
６とした（図２（Ｃ））。フォトリソグラフィー工程を
用いて、引き出し電極５用金属およびＳｉＯX薄膜４を
ウェットエッチングにより除去し、直径５［μｍ］の窓
５Ａを形成した（図２（Ｄ））。窓５Ａの中に露出した
窒化ホウ素粒子３を含む部分の表面を、水素プラズマで
処理した。この後、真空チェンバー内でアノード電極７
となる金属板を窒化ホウ素粒子３を含むフォトレジスト
２に対向させ、その間隔を１２５［μｍ］とした（図２
（Ｄ））。On the other hand, aluminum was deposited on the back surface of the silicon substrate 1 to form an ohmic junction, thereby forming a cathode electrode 6 (FIG. 2C). Using a photolithography process, the metal for the extraction electrode 5 and the SiO x thin film 4 were removed by wet etching to form a window 5A having a diameter of 5 μm (FIG. 2D). The surface of the portion including the boron nitride particles 3 exposed in the window 5A was treated with hydrogen plasma. Thereafter, the anode electrode 7 is placed in a vacuum chamber.
2 was opposed to the photoresist 2 containing the boron nitride particles 3, and the interval was set to 125 [μm] (FIG. 2).
(D)).
【００２４】前記構成の電子放出装置は、次のようにし
て用いられる。つまり、引き出し電極５を接地し（図
１）、カソード電極６に電源１１を接続し、アノード電
極７に電源１２を接続する。これによって、カソード電
極６とアノード電極７とに各々バイアスが加えられる。
さらに、８×１０-7［Ｔｏｒｒ］以下の真空度で放出電
流を測定した。このとき、アノード電圧を５００［Ｖ］
と一定にし、カソード電圧を変化させた。この結果、図
３に示すように、カソード電圧４０［Ｖ］で０．２［ｍ
Ａ］の高い放出電流が得られた。The electron emission device having the above configuration is used as follows. That is, the extraction electrode 5 is grounded (FIG. 1), the power supply 11 is connected to the cathode electrode 6, and the power supply 12 is connected to the anode electrode 7. As a result, a bias is applied to each of the cathode electrode 6 and the anode electrode 7.
Further, the emission current was measured at a degree of vacuum of 8 × 10 −7 [Torr] or less. At this time, the anode voltage is set to 500 [V].
And the cathode voltage was changed. As a result, as shown in FIG. 3, 0.2 [m
A], a high emission current was obtained.
【００２５】[0025]
【実施例２】次に、本発明にかかる電子放出装置の実施
例２について説明する。図４は、本発明に係る電子放出
装置の実施例２を示す断面図である。実施例２の電子放
出装置は、シリコン基板２１、フォトレジスト２２、窒
化ホウ素粒子２３、ＳｉＯX薄膜２４、引き出し電極２
５、カソード電極２６、アノード電極２７およびイオウ
添加窒化ホウ素炭素薄膜２８で構成される。Embodiment 2 Next, Embodiment 2 of the electron-emitting device according to the present invention will be described. FIG. 4 is a sectional view showing Example 2 of the electron-emitting device according to the present invention. The electron emission device according to the second embodiment includes a silicon substrate 21, a photoresist 22, boron nitride particles 23, a SiO x thin film 24, and an extraction electrode 2.
5, a cathode electrode 26, an anode electrode 27, and a sulfur-doped boron nitride carbon thin film 28.
【００２６】シリコン基板２１は、ｎ型のシリコン半導
体の基板である。フォトレジスト２２は、シリコン基板
２１の表面に設けられている。フォトレジスト２２に
は、窒化ホウ素粒子２３が混在している。窒化ホウ素粒
子２３は、窒素とホウ素とを主要元素とした結晶粒子で
ある。引き出し電極２５は、ＳｉＯX薄膜２４によって
絶縁された第１の金属体である。カソード電極２６は、
シリコン基板２１の裏面に設けられている。アノード電
極２７は、引き出し電極２５と空間をもって設けられた
第２の金属体である。イオウ添加窒化ホウ素炭素薄膜２
８は、フォトレジスト２２の表面に設けられた、窒素と
ホウ素とを主要元素した薄膜である。The silicon substrate 21 is an n-type silicon semiconductor substrate. Photoresist 22 is provided on the surface of silicon substrate 21. Boron nitride particles 23 are mixed in the photoresist 22. The boron nitride particles 23 are crystal particles containing nitrogen and boron as main elements. The extraction electrode 25 is a first metal body insulated by the SiO x thin film 24. The cathode electrode 26 is
It is provided on the back surface of the silicon substrate 21. The anode electrode 27 is a second metal member provided with a space with the extraction electrode 25. Sulfur-doped boron nitride carbon thin film 2
Reference numeral 8 denotes a thin film provided on the surface of the photoresist 22 and containing nitrogen and boron as main elements.
【００２７】この構成の電子放出装置を次に示す手順で
作製した。つまり、図５（Ａ）に示すｎ型のシリコン基
板２１上に、フォトレジスト２２を塗布した（図５
（Ｂ））。フォトレジスト２２には、粒子の大きさが１
〜３［μｍ］の窒化ホウ素粒子２３を混入させた。フォ
トレジスト２２の塗布されたシリコン基板２１を、６５
０［℃］で熱処理をした。この熱処理の際、フォトレジ
スト２２が炭化された。この後、プラズマアシスト化学
気相成長法により窒素、三塩化ホウ素およびメタンを材
料ガスとして、イオウ添加窒化ホウ素炭素薄膜２８を２
００［ｎｍ］堆積させた（図５（Ｂ））。An electron-emitting device having this structure was manufactured in the following procedure. That is, a photoresist 22 was applied on the n-type silicon substrate 21 shown in FIG.
(B)). The photoresist 22 has a particle size of 1
~ 3 [μm] boron nitride particles 23 were mixed. The silicon substrate 21 coated with the photoresist 22 is
Heat treatment was performed at 0 [° C.]. During this heat treatment, the photoresist 22 was carbonized. Thereafter, the sulfur-added boron nitride carbon thin film 28 is formed by plasma assisted chemical vapor deposition using nitrogen, boron trichloride and methane as material gases.
00 [nm] was deposited (FIG. 5B).
【００２８】この際、炭素組成比は０．１、窒素および
ホウ素の組成比は各々０．５、０．４とした。また、イ
オウ原子を不純物として１×１０18［ｃｍ-3］の濃度に
添加した。その上にＳｉＯX薄膜２４を５００［ｎ
ｍ］、および引き出し電極２５用の金属としてＴｉ（２
０［ｎｍ］）／Ａｕ（５００［ｎｍ］）を電子ビーム蒸
着法で形成した（図５（Ｃ））。At this time, the composition ratio of carbon was 0.1, and the composition ratios of nitrogen and boron were 0.5 and 0.4, respectively. Sulfur atoms were added as impurities to a concentration of 1 × 10 18 [cm −3 ]. On top of this, a SiO x thin film 24 of 500 [n]
m], and Ti (2
0 [nm]) / Au (500 [nm]) was formed by an electron beam evaporation method (FIG. 5C).
【００２９】一方、シリコン基板２１の裏面にアルミニ
ウムを蒸着して、オーミック接合を形成し、カソード電
極２６とした（図５（Ｃ））。フォトリソグラフィー工
程を用いて、引き出し電極２５用の金属およびＳｉＯX
薄膜２４をウェットエッチングにより除去し、直径５
［μｍ］の窓２５Ａを形成した（図５（Ｄ））。窓２５
Ａの中に露出した窒化ホウ素粒子を含む部分の表面を水
素プラズマで処理した後、真空チェンバー内でアノード
電極２７となる金属板を窒化ホウ素粒子を含むフォトレ
ジスト膜２２に対向させ、その間隔を１２５［μｍ］と
した（図５（Ｄ））。On the other hand, aluminum was deposited on the back surface of the silicon substrate 21 to form an ohmic junction, thereby forming a cathode electrode 26 (FIG. 5C). Using a photolithography process, a metal for the extraction electrode 25 and SiO x
The thin film 24 is removed by wet etching, and the diameter 5
[Μm] windows 25A were formed (FIG. 5D). Window 25
After the surface of the portion containing the boron nitride particles exposed in A is treated with hydrogen plasma, the metal plate serving as the anode electrode 27 is made to face the photoresist film 22 containing the boron nitride particles in the vacuum chamber, and the gap is set. 125 [μm] (FIG. 5D).
【００３０】前記構成の電子放出装置は、次のようにし
て用いられる。つまり、引き出し電極２５を接地し（図
１）、カソード電極２６に電源１１を接続し、アノード
電極２７に電源１２を接続する。これによって、カソー
ド電極２６とアノード電極２７とに各々バイアスが加え
られる。さらに、８×１０-7［Ｔｏｒｒ］以下の真空度
で放出電流を測定した。このとき、アノード電圧を５０
０［Ｖ］と一定にし、カソード電圧を変化させた。The electron emission device having the above configuration is used as follows. That is, the extraction electrode 25 is grounded (FIG. 1), the power supply 11 is connected to the cathode electrode 26, and the power supply 12 is connected to the anode electrode 27. As a result, a bias is applied to each of the cathode electrode 26 and the anode electrode 27. Further, the emission current was measured at a degree of vacuum of 8 × 10 −7 [Torr] or less. At this time, the anode voltage is set to 50
The voltage was kept constant at 0 [V], and the cathode voltage was changed.
【００３１】この結果、カソード電圧３５［Ｖ］で０．
２［ｍＡ］の高い放出電流が得られ、実施例１の電子放
出特性に比べて改善が見られた。つまり、実施例２のイ
オウ添加窒化ホウ素炭素薄膜２８の堆積により、電子放
出部の電気抵抗が低減でき、電界集中を向上することが
でき、電子放出特性の改善を図ることができる。As a result, when the cathode voltage is 35 [V] and the voltage is 0.1.
A high emission current of 2 [mA] was obtained, and an improvement was observed as compared with the electron emission characteristics of Example 1. That is, by depositing the sulfur-doped boron nitride carbon thin film 28 of Example 2, the electric resistance of the electron-emitting portion can be reduced, the electric field concentration can be improved, and the electron-emitting characteristics can be improved.
【００３２】以上、実施例１，２について説明した。実
施例１，２では、シリコン基板１，２１を用いたが、こ
れらの代わりにガラス基板をはじめ様々な絶縁体基板も
用いることができる。この場合には、絶縁体基板上に金
属膜を設け、その上で実施例１，２のように作製する。The first and second embodiments have been described above. In the first and second embodiments, the silicon substrates 1 and 21 are used, but instead of these, various insulator substrates such as a glass substrate can be used. In this case, a metal film is provided on the insulator substrate, and then the device is manufactured as in the first and second embodiments.
【００３３】また、カソード電極６，２６用の金属、引
き出し電極５，２５用の材料、アノード電極７，２７用
の材料としては、実施例１，２で用いた材料に限定され
ず、それ以外の様々な材料を用いることができる。The metal for the cathode electrodes 6 and 26, the material for the extraction electrodes 5 and 25, and the material for the anode electrodes 7 and 27 are not limited to the materials used in the first and second embodiments. Can be used.
【００３４】また、実施例１，２では、窒化ホウ素粒子
３，２３として無添加窒化ホウ素結晶粒子を用いたが、
フォトレジストに混入する前に、この粒子にドナー不純
物を熱拡散させて用いることにより、特性改善が期待で
きる。また、無添加窒化ホウ素結晶粒子を基板表面に塗
布した後、イオン注入法により不純物を添加することも
できる。さらに、実施例１，２では、フォトレジストを
用いて窒化ホウ素粒子３，２３を基板上に塗布したが、
窒化ホウ素粒子３，２３をアルコ―ルなどの溶剤に加え
て塗布することもできる。In Examples 1 and 2, the boron nitride particles 3 and 23 used were boron-free boron nitride crystal particles.
Before mixing into the photoresist, the particles can be used by thermally diffusing the donor impurities into the particles, whereby an improvement in characteristics can be expected. After applying the boron-doped boron nitride crystal particles to the substrate surface, impurities can be added by ion implantation. Further, in Examples 1 and 2, the boron nitride particles 3 and 23 were coated on the substrate using a photoresist.
The boron nitride particles 3 and 23 can be applied by adding them to a solvent such as alcohol.
【００３５】また、実施例２では、イオウ添加窒化ホウ
素炭素薄膜２８の作製にプラズマアシスト化学気相成長
法を用いたが、他のスパッタ法、イオンプレーティング
法、レーザアブレーション法などの堆積方法も用いるこ
とができる。In the second embodiment, the plasma-assisted chemical vapor deposition method was used to produce the sulfur-doped boron nitride carbon thin film 28. However, other deposition methods such as sputtering, ion plating, and laser ablation may be used. Can be used.
【００３６】さらに、実施例１，２の電子放出素子を同
一基板上に２つ以上作製し、電子放出アレー装置を実現
することができる。Furthermore, two or more electron-emitting devices according to the first and second embodiments can be manufactured on the same substrate to realize an electron-emitting array device.
【００３７】[0037]
【発明の効果】以上説明したように、本発明によれば、
窒素とホウ素とを主要元素とした粒子状材料を用いたこ
とによって、窒化ホウ素炭素薄膜を成長させて作製した
引き出し電極を有する電子放出装置が提供でき、低電圧
で高輝度動作を実現できるため、表示装置のキーデバイ
スとして効果的である。As described above, according to the present invention,
By using a particulate material containing nitrogen and boron as main elements, it is possible to provide an electron-emitting device having an extraction electrode formed by growing a boron nitride carbon thin film, and to realize high-luminance operation at low voltage. It is effective as a key device of a display device.
【００３８】また、本発明によれば、低電圧で高い引き
出し電流が実現できるため、本発明による電子放出装置
を、フラットパネルディスプレー、電子ビーム露光装
置、撮像装置、材料評価装置等のキーデバイスとして提
供することが可能である。Further, according to the present invention, since a high extraction current can be realized at a low voltage, the electron emission device according to the present invention can be used as a key device for a flat panel display, an electron beam exposure device, an imaging device, a material evaluation device, and the like. It is possible to provide.
【図１】本発明に係る電子放出装置の実施例１を示す断
面図である。FIG. 1 is a sectional view showing Example 1 of an electron-emitting device according to the present invention.
【図２】実施例１の電子放出装置の作製手順を説明する
ための説明図である。FIG. 2 is an explanatory diagram for explaining a manufacturing procedure of the electron-emitting device according to the first embodiment.
【図３】実施例１の電子放出装置の電子放出特性を示す
特性図である。FIG. 3 is a characteristic diagram illustrating an electron emission characteristic of the electron emission device according to the first embodiment.
【図４】本発明に係る電子放出装置の実施例２を示す断
面図である。FIG. 4 is a sectional view showing Embodiment 2 of the electron-emitting device according to the present invention.
【図５】実施例２の電子放出装置の作製手順を説明する
ための説明図である。FIG. 5 is an explanatory diagram for explaining a manufacturing procedure of the electron-emitting device according to the second embodiment.
１，２１ シリコン基板 ２，２２ フォトレジスト ３，２３ 窒化ホウ素粒子 ４，２４ ＳｉＯX薄膜 ５，２５ 引き出し電極 ５Ａ，２５Ａ 窓 ６，２６ カソード電極 ７，２７ アノード電極 １１，１２ 電源 ２８ イオウ添加窒化ホウ素炭素薄膜1,21 silicon substrate 2, 22 photoresist 3 and 23 boron nitride particles 4, 24 SiO X film 5,25 lead electrode 5A, 25A windows 6, 26 cathode electrode 7, 27 the anode electrodes 11 and 12 supply 28 sulfur added boron nitride Carbon thin film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 梅田 優 東京都中央区日本橋室町４丁目２番16号 株式会社渡邊商行内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yu Umeda 4-2-16-1 Nihombashi Muromachi, Chuo-ku, Tokyo Inside Watanabe Shoko Co., Ltd.
Claims (10)
ウ素とを主要元素とした粒子状材料が存在し、前記基板
および前記粒子状材料に電気的に絶縁して第１の金属体
が設けられ、前記粒子状材料に対向して前記第１の金属
体と空間をもって第２の金属体を設けたことを特徴とす
る電子放出装置。A first metal body provided on a surface of a conductor or a semiconductor substrate, the first metal body being electrically insulated from the substrate and the particulate material; An electron emission device, wherein a second metal body is provided with a space between the first metal body and the particulate material.
を主要元素とした粒子状材料が埋め込まれ、前記粒子状
材料の一部が露出し、前記基板および前記粒子状材料に
電気的に絶縁して第１の金属体が設けられ、前記粒子状
材料に対向して前記第１の金属体と空間をもって第２の
金属体を設けたことを特徴とする電子放出装置。2. A conductor or semiconductor substrate is filled with a particulate material containing nitrogen and boron as main elements, a part of the particulate material is exposed, and the conductive or semiconductor substrate is electrically insulated from the substrate and the particulate material. An electron-emitting device, wherein a first metal body is provided, and a second metal body is provided facing the particulate material with a space between the first metal body and the first metal body.
半導体層があり、前記層内に窒素とホウ素とを主要元素
とした粒子状材料があり、その粒子状材料の一部が露出
し、前記導体層または前記半導体層および前記粒子状材
料に電気的に絶縁して第１の金属体が設けられ、前記粒
子状材料に対向して前記第１の金属体と空間をもって第
２の金属体を設けたことを特徴とする電子放出装置。3. A conductor or semiconductor layer on a conductor or semiconductor substrate, a particulate material containing nitrogen and boron as main elements in the layer, and a part of the particulate material is exposed, A first metal body is provided electrically insulated from the conductor layer or the semiconductor layer and the particulate material, and a second metal body is provided with a space with the first metal body facing the particulate material. An electron emission device, comprising:
とを主要元素とした粒子状材料が存在し、その上に窒素
とホウ素とを主要元素とした薄膜があり、前記薄膜に電
気的に絶縁して第１の金属体が設けられ、前記粒子状材
料に対向して前記第１の金属体と空間をもって第２の金
属体を設けたことを特徴とする電子放出装置。4. A conductor or semiconductor substrate includes a particulate material containing nitrogen and boron as main elements, and a thin film containing nitrogen and boron as main elements on the conductor or semiconductor substrate. An electron-emitting device, wherein a first metal body is provided, and a second metal body is provided facing the particulate material with a space between the first metal body and the first metal body.
を窒素とホウ素と炭素とを主要元素としたことを特徴と
する請求項１〜４のいずれか１項に記載の電子放出装
置。5. The electron-emitting device according to claim 1, wherein the thin film formed on the particulate material has nitrogen, boron and carbon as main elements.
要元素とした薄膜内でホウ素組成比または炭素組成比が
変化したことを特徴とする請求項１〜５のいずれか１項
に記載の電子放出装置。6. The method according to claim 1, wherein a boron composition ratio or a carbon composition ratio changes in a thin film containing nitrogen, boron, and carbon as main elements. Electron emission device.
た粒子状材料にシリコン、硫黄、炭素、リチウムのいず
れかの不純物原子を添加したことを特徴とする請求項１
〜６のいずれか１項に記載の電子放出装置。7. A particulate material containing nitrogen and boron as main elements to which any one of silicon, sulfur, carbon and lithium is added.
The electron-emitting device according to any one of claims 1 to 6.
た薄膜または窒素とホウ素と炭素とを主要元素とした薄
膜にシリコン、硫黄、炭素、リチウムの原子を添加した
ことを特徴とする請求項１〜７のいずれか１項に記載の
電子放出装置。8. A thin film containing nitrogen and boron as main elements or a thin film containing nitrogen, boron and carbon as main elements, wherein atoms of silicon, sulfur, carbon and lithium are added. The electron-emitting device according to any one of claims 1 to 7.
材料の上に形成された薄膜表面を水素原子で終端したこ
とを特徴とする請求項１〜８のいずれか１項に記載の電
子放出装置。9. The electron emission device according to claim 1, wherein the surface of the particulate material or the surface of the thin film formed on the particulate material is terminated with hydrogen atoms. apparatus.
電子放出装置が２つ以上のアレーからなることを特徴と
する電子放出装置。10. An electron-emitting device according to claim 1, wherein the electron-emitting device comprises two or more arrays.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003060942A1 (en) * | 2000-06-30 | 2003-07-24 | Kabushiki Kaisha Watanabe Shoko | Electron emission device |
| KR101331493B1 (en) | 2012-05-30 | 2013-11-20 | 한국원자력연구원 | Preparing method for double-layer target with a narrow vacuum gap for the laser induced particle acceleration and double-layer target prepared by the same method |
-
2000
- 2000-01-28 JP JP2000020872A patent/JP4312331B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003060942A1 (en) * | 2000-06-30 | 2003-07-24 | Kabushiki Kaisha Watanabe Shoko | Electron emission device |
| KR101331493B1 (en) | 2012-05-30 | 2013-11-20 | 한국원자력연구원 | Preparing method for double-layer target with a narrow vacuum gap for the laser induced particle acceleration and double-layer target prepared by the same method |
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