JP2001185526A - Method and apparatus for etching - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and apparatus for etching by which a desired part of a processed member can be etched without forming a mask. SOLUTION: In the etching apparatus 10, a discharge head section 12 is mounted on an XY table 14 and can be moved along the surface of the processed member. Like a printer head of an ink jet printer, the discharge head section 12 is formed, linearly or zigzag, with a plurality of liquid discharge holes 16 for discharging an etchant such as an HF aqueous solution. The discharge head section 12 and the XY table 14 are so controlled by a controller 40 that the etchant may be discharged and applied to the desired part of the processed member to etch that part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching method for removing a part or the entire surface of a member to be processed, and more particularly to a method for removing a part of a member to be processed using an etchant (etchant). The present invention relates to a novel etching method and apparatus.

[0002]

2. Description of the Related Art Etching is widely used in various fields, particularly in the field of manufacturing semiconductors, and is an essential technique for forming elements and forming wiring patterns. Conventionally,
When forming elements and wiring patterns on a semiconductor substrate such as a silicon wafer, a photoresist is applied to the surface of the semiconductor substrate and patterned by photolithography, and using this as a mask, wet etching using an etchant or plasma Dry etching. In addition, for example, even when a scale or a symbol is provided on a glass container or a glass instrument, a mask having a predetermined pattern is formed on the surface of the glass, and the mask protects a non-etched portion and performs etching. .

[0003]

As described above, in the conventional etching method, a mask is formed on the surface of the member to be processed to protect the non-etched portion. For this reason, many steps and time are required to form the mask, and a material for forming the mask is also required, resulting in an increase in cost.

An object of the present invention is to solve the above-mentioned drawbacks of the prior art, and it is an object of the present invention to enable a desired position of a member to be processed to be easily etched without forming a mask.

[0005]

In order to achieve the above object, an etching method according to the present invention is directed to an etching method which reacts with a member to be processed and removes the member to be processed by the liquid discharging means. It is characterized in that the material is discharged to a desired position of the member, and the member to be processed at that position is removed.

According to the present invention having the above-described structure, an etching solution is discharged to a desired portion of a member to be processed by a liquid discharging means and applied, so that a mask which requires much time and labor can be formed. It is unnecessary and the etching process can be performed quickly and inexpensively. If a constant-discharge mechanism that discharges a fixed amount of liquid, such as a printer head of an ink-jet printer, is used as the liquid discharge unit, an etching liquid corresponding to the width and depth of the etching target area can be applied. Variation can be reduced. In addition, the discharge of the etching liquid by the liquid discharge unit is performed based on a trajectory given in advance.
If the liquid ejection unit and the member to be processed are performed while being relatively moved, etching of an arbitrary shape (pattern) can be easily performed without forming a mask.

Further, when the member to be processed mainly contains silicon such as a silicon wafer or glass, a fluorine-based liquid, for example, an aqueous solution of HF may be used as an etching solution. When HF reacts with silicon (Si), silicon tetrafluoride (SiF ₄ ) or disilicon hexafluoride (Si ₂ F ₆ )
Etc., because it is released from the member to be processed as gas,
Etching can be easily performed. Further, when a member to be processed containing silicon as a main component is placed in an atmosphere containing a fluorine-based gas such as F ₂ or HF, and an etching liquid composed of a fluorine-based liquid is discharged toward the member to be processed,
Such as F ₂ and HF gas is a fluorine-based gas present in the atmosphere, to react at the surface of the member to be processed with fluorine present in the etching solution, it is possible to more rapid etching. Further, when the member to be processed is heated,
The reaction between the etching solution and the member to be processed can be enhanced, and the etching solution and water generated by the reaction quickly evaporate, thereby performing a substantially dry etching, and the etching anisotropy is also improved. improves.

Further, in the etching method according to the present invention, the member to be treated containing silicon as a main component is placed in an atmosphere in which a fluorine-based gas is present and heated, and water is discharged from a liquid discharging means to the member to be treated. It is characterized in that the target material is discharged to a desired position, the fluorine-based gas, the water, and the target member react with each other to remove the target member at the desired position.

That is, when a member to be treated containing silicon as a main component is placed in an atmosphere containing a fluorine-based gas such as fluorine gas or HF gas, and water is discharged onto the surface of the member to be treated, silicon becomes a main component. Gaseous disilicide hexafluoride (Si ₂ F ₆ ) by reacting the to-be-processed member with the fluorine-based gas and water
Therefore, the member to be processed can be etched without using a mask or plasma, and the etching process can be simplified. If the processing member is heated, the reaction speed increases, and the etching can be performed quickly. In particular, when the vapor pressure of a reaction product (for example, SiF ₄ or Si ₂ F ₆ ) between the member to be processed and the etchant (etchant) is high, the temperature of the member to be processed is increased to a certain high temperature (for example, 100 ° C.) , Substantial dry etching can be performed.

An etching apparatus for performing the above-described etching method includes a main body having a liquid discharge port which can be disposed at a desired position of the member to be processed, and a liquid discharge port of the main body, which communicates with the main body. It is characterized by having a liquid storage part storing an etching liquid, and a discharge mechanism provided in the main part to discharge the etching liquid from the liquid discharge port. According to the present invention configured as described above, it is not necessary to form a mask for etching, and etching can be performed easily and quickly. Since no plasma is used, energy required for etching can be reduced.

Further, the etching apparatus according to the present invention comprises a gas supply section for supplying a fluorine-based gas to a surface portion of a member to be processed, which is mainly composed of silicon; a heating means for heating the member to be processed; A main body having a liquid discharge port that can be disposed opposite to a desired position of the processing member, a liquid storage section that communicates with the liquid discharge port of the main body, and stores water; And a discharge mechanism for discharging from the liquid discharge port. According to the present invention, a fluorine-based gas such as a fluorine gas or an HF gas and water,
The member to be processed containing silicon as a main component reacts with
Since F ₄ , Si ₂ F _{6 and the} like are generated, the member to be processed can be etched without forming a mask, and the process can be simplified.

The main body is attached to a scanning section for moving the main body along the surface of the member to be processed, and is etched while moving the main body along a predetermined trajectory, thereby forming a predetermined pattern by etching. It can be easily formed. In addition, while providing a plurality of liquid discharge ports in the main body, a discharge mechanism is provided corresponding to each liquid discharge port,
By connecting these ejection mechanisms to a control unit that drives an arbitrary ejection mechanism based on a given command, processing information (etching information) is given to the control unit, and etching along a predetermined trajectory is automatically performed. Can be performed.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the etching method and apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a bottom perspective view of an etching apparatus according to an embodiment of the present invention. In FIG. 1, an etching apparatus 10 has a so-called XY table 14 in which a discharge head 12 as a main body constitutes a scanning unit.
It is mounted on. The ejection head unit 12 is a liquid ejection means, and has a large number of liquid ejection ports 16 provided on the front surface serving as a lower surface. It can be applied by discharging to a desired position of a member to be processed, such as a semiconductor substrate or a liquid crystal glass substrate (not shown).

The XY table 14 comprises an X table 18 and a Y table 20 on which the X table 18 is mounted. The X table 18 has the ejection head section 12 fixed and a liquid storage section storing an etching liquid. On the other hand, the Y table 20 is screwed with a ball screw 22 having one end rotatably supported on a frame (not shown). The other end of the ball screw 22 is connected to a Y servo motor 24 attached to the frame, and the Y screw motor 24 is driven so that the ball screw 22 can be rotated. The Y table 20 has a ball screw 22 fixed to a frame.
The guide bar 26 is slidably penetrated. Therefore, by rotating the ball screw 22 via the Y servo motor 24, the Y table 20
The rotation of the ball screw 2 is prevented by the guide bar 26.
2 in the Y direction.

The Y table 20 is provided with a ball screw 28 arranged in the X direction perpendicular to the ball screw 22. The ball screw 28 is screwed to the X table 18, one end is rotatably supported via a bearing 30 attached to the Y table 20, and the other end is connected to an X servo motor 32 attached to the Y table 20. I have.
A guide bar 38 is provided on the Y table 20 via brackets 34 and 36 in parallel with the ball screw 28. The guide bar 38 slidably penetrates one end of the X table 18 and guides the X table 18 in the X direction by preventing the X table 18 from rotating. Therefore,
When the X servo motor 32 is driven to rotate the ball screw 28, the X table 18 moves in the X direction along the ball screw 28. The Y servo motor 24, the X servo motor 32, and the ejection head unit 12 are connected to a control device 40, which is a control unit, and are driven and controlled by the control device 40.

The liquid discharge port 16 provided in the discharge head section 12
Are arranged in a straight line or in a staggered pattern (for example, 24). The size of these liquid discharge ports 16 can be changed depending on the size of the portion to be etched of the member to be processed, and in the case of the embodiment, it is possible to cope with a fine etching target portion and to easily supply the etching liquid. It has a diameter of about 15 to 30 μm so that it can be evaporated. The ejection head section 12 is formed in a structure substantially similar to that of a printer head of an ink jet printer, and functions as a constant-rate ejection device of an etching solution, so that an etching solution such as an HF aqueous solution can be ejected at a constant rate. ing.

That is, as shown in a part of the cross section in FIG. 2, the discharge head section 12 is provided with a liquid reservoir chamber 42 corresponding to each liquid discharge port 16. The liquid storage chamber 42 communicates with the liquid discharge port 16 via a flow path 44,
Through a supply path 46, it communicates with a liquid supply tank 48 serving as a liquid storage part storing the etching liquid. In addition, a second liquid storage chamber 50 is provided in the flow path 44 to prevent outside air from entering the liquid storage chamber 42 after the etching liquid is discharged.

A diaphragm 52 is provided on the back (or side) of the liquid storage chamber 42. In addition, the diaphragm 52
The piezoelectric element 54 for driving the diaphragm 52
Is provided. The piezoelectric element 54 includes a diaphragm 52
Together, they form an etchant discharge mechanism. The piezoelectric element 54 is connected to a drive circuit (not shown) controlled by the control device 40. When a voltage is applied through the drive circuit, the diaphragm 52 vibrates in the left-right direction in FIG. , The etching solution in the liquid reservoir 42,
The droplets are discharged from the discharge port 16 as droplets 56 having a predetermined size (for example, 2 to 6 μL).

In the embodiment configured as described above,
For example, when an insulating layer formed on a semiconductor substrate is etched to form a wiring groove, it can be performed, for example, as follows. In this embodiment, a case where an upper wiring layer is formed on a semiconductor substrate having a lower wiring layer will be described. However, it is needless to say that the present invention can be similarly applied to formation of a lower wiring layer and the like.

First, as shown in FIG. 3A, an interlayer insulating film 64 made of silicon dioxide (SiO ₂ ) covers lower wirings 62a, 62b,.
Is formed, and the surface of the interlayer insulating film 64 is formed by CMP (Chem).
Ical Mechanical Polish
The surface is flattened by polishing according to g). In the embodiment, a mask is not used for etching the interlayer insulating film 64 as described later. Therefore, in the case of the embodiment, since there is no need to worry about defocusing when the wiring pattern is transferred to the mask, the interlayer insulating film 64 does not need to be flattened. However, in order to perform reliable and accurate etching, It is desirable that the interlayer insulating film 64 be flattened.

Next, the semiconductor substrate 60, which is a member to be processed with the interlayer insulating film 64 planarized, is
6 and a predetermined temperature (for example, 100 to 100) by a heater 68 which is a heating means built in the processing stage 66.
(120 ° C.). Then, the ejection head unit 12 of the etching apparatus 10 disposed above the processing stage 66 is moved to a predetermined position above the semiconductor substrate 60.

That is, when a predetermined processing program is given and a command to start etching is given, the controller 40 controls the X servo motor 32 and the Y servo motor 24 based on the given position information and information on the drive locus. To move the ejection head unit 12 to a predetermined position (etching start position) above the semiconductor substrate 60 via the XY table 14. Further, the control device 40 controls the ejection head unit 1
The second piezoelectric element 54 is driven, and the etching liquid (in the case of the embodiment, an aqueous solution of HF which is a fluorine-based liquid) 70 is discharged as fine particles from the liquid discharge port 16 toward the interlayer insulating film 64 where no mask is provided. XY table 14 is moved based on given trajectory information.
(See FIG. 3 (2)).

HF solution applied to interlayer insulating film 64
(Etching liquid) 70 is HF dissolved in water,

HF ₂ ⁻ ions are formed as in the following formula: 12HF + H ₂ O → HF ₂ ⁻ + H ₃ O ⁺ . When the ions reach the surface of the interlayer insulating film 64, the ions form silicon dioxide forming the interlayer insulating film 64,

The reaction proceeds as follows: 12HF ₂ ⁻ + 8SiO ₂ → 4Si ₂ F ₆ + 6H ₂ O + 5O ₂ to produce disilicon hexafluoride (Si ₂ F ₆ ). Since this disilicon hexafluoride is a gas at normal temperature,
It is separated from the semiconductor substrate 60. Therefore, the interlayer insulating film 6
4 is etched by the HF aqueous solution 70, and a wiring groove 72 having a predetermined depth is formed at a predetermined position. Also, HF
Is dissolved together with the water generated by the reaction of Chemical Formula 2 and evaporates quickly because the silicon substrate 60 is heated.

Further, after forming the wiring groove of a predetermined pattern, the control device 40 moves the discharge head section 12 to the position where the contact hole is formed, and as shown in FIG. The HF aqueous solution 70 is discharged to a predetermined position to etch the interlayer insulating film 64, and the contact hole 7 is etched.
4 is formed. Then, the wiring groove 72 and the contact hole 74 are filled with metal such as copper by sputtering, plating, or the like to form an upper wiring layer.

As described above, in the embodiment, the ejection head unit 12 serving as the liquid ejection means is mounted on the XY table 14, and the control device 40 executes the X-axis control based on the information given.
Since the ejection head section 12 is moved along a desired trajectory via the Y table 14, the interlayer insulating film 64 can be etched to form the wiring groove 72 without providing a mask. The simplification can be greatly simplified, and the time required for etching can be shortened. Moreover, the water in which the HF is dissolved or the water generated by the reaction evaporates quickly because the semiconductor substrate 60 is heated, so that substantially dry etching can be performed. In the embodiment, since the member to be processed is heated, it can be easily heated to 100 ° C. or higher, and the etching rate can be improved, and the etching solution evaporates quickly. Despite the etching used, high anisotropy can be realized, and a highly accurate pattern can be formed. In addition, since the discharge head unit 12 discharges the etching liquid 70 as the droplets 56 in a fixed amount by the diaphragm 52, the discharge of the etching liquid 70 according to the thickness of the interlayer insulating film 64 can be easily performed. Accordingly, the wiring groove 72 having a constant depth can be easily formed, and the contact hole 74 can be surely formed with high accuracy.

In the above embodiment, when the interlayer insulating film 64 made of silicon dioxide is etched,
Has been described, the semiconductor substrate 60 made of silicon single crystal, a polycrystalline silicon film formed on the semiconductor substrate 60,
Further, the present invention can be applied to etching of a member to be processed containing silicon such as quartz or glass as a main component. Then, as in the case where the member to be processed mainly containing silicon is etched with a fluorine-based etching solution such as an aqueous HF solution (hydrofluoric acid), a reaction product (for example, SiF ₄ ) between the member to be processed and the etching solution is used. , Si ₂ F _6, etc.), the dry etching can be performed by setting the temperature of the member to be processed to a relatively high temperature (100 ° C. or higher). Further, in the above embodiment, a part of the interlayer insulating film 64 is etched to form the wiring groove 72.
Has been described, but the present invention can also be applied to the case where the entire surface of the member to be processed, that is, the entire surface of the interlayer insulating film 64 is etched.

In the above-described embodiment, the case where the discharge mechanism of the processing liquid is of a so-called on-demand type has been described. However, the discharge mechanism may be of a so-called continuous injection type such as a charge modulation type. In addition, the ejection mechanism
Other structures capable of discharging the processing liquid by a predetermined amount, such as a piston pump, may be used. In the above-described embodiment, the case where the XY table 14 is driven by the ball screw has been described. However, the XY table may be driven by a timing belt or a wire.

FIG. 4 shows an etching apparatus according to another embodiment. In the etching apparatus 90 according to this embodiment, an ejection head unit 12 is mounted on an XY table (not shown), and a gas nozzle unit 92 is provided near the ejection head 12.
2 and the gas nozzle portion 92 move integrally. The liquid discharge head 12 and the gas nozzle 92
Is disposed above a processing stage 66 having a built-in heater 68. Then, the silicon substrate 94 disposed on the processing stage 66 has the silicon oxide film 96 formed thereon, and is heated to a predetermined temperature (for example, 1
20 ° C.).

The discharge head section 12 stores an HF aqueous solution in a liquid supply tank section (not shown) so that the HF aqueous solution 70 can be discharged and applied to a predetermined position of the silicon oxide film 96 as fine particles. It is. Further, the gas nozzle unit 92 is connected to the HF gas generation unit 102 via a flexible tube 100. This HF gas generator 1
Numeral 02 forms a gas supply unit together with the gas nozzle unit 92, and generates HF gas using carbon tetrafluoride (CF ₄ ) as a raw material.

That is, the HF gas generator 102 according to the embodiment includes the carbon tetrafluoride supply source 104 and the discharge unit 1
06 and a water bubbling unit 108. Then, the carbon tetrafluoride supply source 104 is connected to the flow control valve 110.
Is connected to the discharge unit 106 through a raw material pipe 112 provided with a carbon tetrafluoride gas at atmospheric pressure. Further, a water bubbling unit 108 is provided in the raw material pipe 112 in parallel with the flow control valve 110 via pipes 114 and 116. The pipe 114 is provided with a flow control valve 118 so that the amount of carbon tetrafluoride supplied to the water bubbling unit 108 can be arbitrarily adjusted.

Water (steam) is added to the carbon tetrafluoride supplied to the water bubbling unit 108 by the water bubbling unit 108, and the piping 116 and the raw material piping 112
Flows into the discharge unit 106 through. Then, the discharge unit 106 generates HF gas, which is a fluorine-based gas, by reacting the two by gas discharge through a mixed gas of the carbon tetrafluoride and the steam that has flowed in. This HF gas is supplied to the gas nozzle unit 92 via the flexible tube 100 connected to the outflow side of the discharge unit 106. The gas nozzle portion 92 has a portion where the discharge head portion 12 discharges and applies the HF aqueous solution 70 to the silicon oxide film 96.
Then, HF gas is blown to make the surroundings rich in HF gas.

The periphery of the discharge head section 12 is covered by a suction head (not shown) so that reaction products and HF gas which has not contributed to the reaction are led to the abatement apparatus. The HF gas may be generated by another method, for example, by reacting fluorite (CaF ₂ ) with sulfuric acid (H ₂ SO ₂ ).

In the embodiment configured as described above,
The silicon substrate 94 disposed on the processing stage 66 is heated by the heater 68 to 100 ° C. or higher. Then, a locus for etching and patterning is given to a control device 40 (not shown). The control device drives the XY table based on the given trajectory information,
2 is moved, and the HF aqueous solution 70 is discharged as fine particles from the liquid discharge port 16 of the discharge head unit 12.

The discharge unit 106 generates a discharge through a mixed gas of carbon tetrafluoride and water vapor at atmospheric pressure, and

HF gas is produced by reacting as in the following formula: CF ₄ + 2H ₂ O → 4HF + CO ₂ This HF gas is blown from the gas nozzle 92 to the silicon oxide film 96 via the flexible tube 100. Then, the HF gas blown to the silicon oxide film 96 is
The discharge head unit 12 reacts as water and following that are included in the aqueous HF solution 70 discharged, HF ₂ ^- produce.

Chemical formula 4 2HF + H ₂ O → HF ₂ ⁻ + H ₃ O ⁺ This HF ₂ ⁻ ion is represented by the following chemical formula 2,
It reacts with the silicon oxide film 96 made of silicon dioxide to generate gaseous disilicon hexafluoride at room temperature. As a result,
The silicon oxide film 96 is etched without using a mask, and a pattern 120 is formed by etching. In addition, water generated by the reaction and HF aqueous solution 7
When the silicon substrate 94 is heated to 100 ° C. or higher, water, which is the solvent of No. 0, evaporates quickly and separates from the silicon substrate 94, so that substantial dry etching becomes possible.

In the above embodiment, HF is applied to the portion of the silicon oxide film 96 where the HF aqueous solution 70 is applied.
Although the case where the gas is blown has been described, the silicon substrate 94 is arranged in a processable chamber, and HF is
The processing chamber may be supplied with a gas to make the atmosphere of the HF gas. Further, in the above-described embodiment, the case where the HF aqueous solution 70 is applied to the silicon oxide film 96 in the HF gas atmosphere has been described. However, the member to be processed mainly containing silicon such as silicon is arranged in the HF gas atmosphere. Water is discharged from the liquid discharge head unit 12 and applied to the member to be processed,
Silicon and HF in the workpiece on the surface of the workpiece
By reacting the gas and the water, the member to be processed containing silicon as a main component can be etched.

[0041]

As described above in detail, according to the present invention, the etching liquid is discharged to the desired portion of the member to be processed by the liquid discharging means and applied, so that the etching liquid is discharged by the liquid discharging means. It is only necessary to discharge and apply to a predetermined portion of the member to be processed, and it is not necessary to form a mask or a vacuum device that requires a lot of time and labor,
The etching process can be simplified, and the etching process can be performed quickly and inexpensively.

The etching method according to the present invention comprises:
The member to be treated containing silicon as a main component is placed in an atmosphere in which a fluorine-based gas is present and heated, and water is discharged from the liquid discharge means to a desired position on the member to be treated, so that the fluorine-based gas, water and Since the etching is performed by reacting with the member, the member to be processed containing silicon as a main component can be etched without using a mask.

[Brief description of the drawings]

FIG. 1 is a perspective view of an etching apparatus according to the present invention as viewed from below.

FIG. 2 is a partial cross-sectional view of a discharge head unit according to the embodiment.

FIG. 3 is an explanatory diagram of a method for forming a wiring groove in a semiconductor substrate using the etching apparatus according to the embodiment.

FIG. 4 is an explanatory diagram of an etching apparatus according to another embodiment.

[Explanation of symbols]

10, 90 Etching device 12 Main body (ejection head) 14 Scanner (XY table) 16 Liquid ejection port 18 X table 20 Y table 24 Y servo motor 32 X servo motor 48 Liquid storage (liquid supply tank) 52, 54 Discharge mechanism (diaphragm, piezoelectric element) 56 Droplet 60, 94 Member to be processed (semiconductor substrate, silicon substrate) 64 Interlayer insulating film 66 Processing stage 68 Heating means (heater) 70 Etching solution (HF aqueous solution) 92, 102 Gas supply Unit (gas nozzle unit, HF gas generation unit) 96 Silicon oxide film 104 Carbon tetrafluoride supply source 106 Discharge unit 108 Water bubbling unit

Claims (10)

[Claims] An etching solution capable of reacting with a member to be processed and removing the member to be processed is discharged to a desired position of the member to be processed by a liquid discharge means, and the member to be processed at that position is removed. Etching method. 2. The method according to claim 1, wherein the discharging of the etching liquid by the liquid discharging unit is performed while relatively moving the liquid discharging unit and the member to be processed based on a predetermined locus. 3. The etching method according to 1. 3. The member to be processed contains silicon as a main component,
The etching method according to claim 1, wherein the etching liquid is a fluorine-based liquid. 4. The etching method according to claim 3, wherein the member to be processed is disposed in an atmosphere containing a fluorine-based gas. 5. The etching method according to claim 1, wherein the processing member is heated. 6. A member to be processed containing silicon as a main component is placed in an atmosphere in which a fluorine-based gas is present and heated, and water is discharged from a liquid discharging means to a desired position on the member to be processed. An etching method comprising reacting a system gas, the water, and the member to be processed to remove the member to be processed at the desired position. 7. A main body having a liquid discharge port which can be disposed opposite to a desired position of a member to be processed, a liquid storage communicating with the liquid discharge port of the main body and storing an etching liquid, and the main body. And an ejection mechanism for ejecting the etching liquid from the liquid ejection port. 8. A gas supply section for supplying a fluorine-based gas to a surface portion of a member to be processed made of silicon as a main component, heating means for heating the member to be processed, and a facing member disposed at a desired position on the member to be processed. A main body having a possible liquid discharge port, a liquid storage section communicating with the liquid discharge port of the main body and storing water, and a discharge provided in the main body to discharge the water from the liquid discharge port. An etching apparatus having a mechanism. 9. The etching apparatus according to claim 7, wherein the main unit is attached to a scanning unit that moves the main unit along a surface of the member to be processed. 10. The main body section has a plurality of the liquid discharge ports, and the discharge mechanisms are provided corresponding to the respective liquid discharge ports, and these discharge mechanisms are controlled based on a given instruction. The etching apparatus according to claim 9, wherein the etching apparatus is connected to a control unit that drives any one of the discharge mechanisms.