JP2001168417A - Ferromagnetic tunnel junction element - Google Patents
Ferromagnetic tunnel junction elementInfo
- Publication number
- JP2001168417A JP2001168417A JP35104999A JP35104999A JP2001168417A JP 2001168417 A JP2001168417 A JP 2001168417A JP 35104999 A JP35104999 A JP 35104999A JP 35104999 A JP35104999 A JP 35104999A JP 2001168417 A JP2001168417 A JP 2001168417A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferromagnetic
- tunnel junction
- layer
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高密度磁気ディス
ク装置における再生用磁気ヘッドや高密度磁気メモリ
（ＭＲＡＭ）に適した強磁性トンネル接合素子に関する
ものである。The present invention relates to a ferromagnetic tunnel junction device suitable for a reproducing magnetic head and a high density magnetic memory (MRAM) in a high density magnetic disk drive.
【０００２】[0002]
【従来の技術】強磁性トンネル接合素子は、二つの強磁
性層の間に非常に薄い絶縁体からなるバリア層を挟んだ
構造を持ち、高い磁気抵抗変化率を示すことから、磁気
ヘッドや磁気メモリへの応用の可能性が高まっている。2. Description of the Related Art A ferromagnetic tunnel junction device has a structure in which a barrier layer made of an extremely thin insulator is sandwiched between two ferromagnetic layers, and exhibits a high magnetoresistance ratio. The possibility of application to memory is increasing.
【０００３】このような強磁性トンネル接合素子を報告
している代表例として、「Ｊｏｕｒｎａｌ ｏｆ Ａｐ
ｐｌｉｅｄ Ｐｈｙｓｉｃｓ、Ｖｏｌ．７９、Ｐ．４７
２４」があり、バリア層となる絶縁体としてＡｌ2Ｏ3膜
が使用されている。As a representative example of such a ferromagnetic tunnel junction device, "Journal of Ap."
Plied Physics, Vol. 79, p. 47
24 ", and an Al 2 O 3 film is used as an insulator to be a barrier layer.
【０００４】今までにバリア層として多くの酸化物や窒
化物が報告されているが、高い磁気抵抗変化率を示すの
はＡｌ2Ｏ3膜のみである。また、バリア層としてＡｌ2
Ｏ3膜を使用した場合にも、その成膜方法及び成膜条件
により磁気抵抗変化率が大きく影響されることが報告さ
れており、現在では主としてＡｌ膜を酸素プラズマ中で
酸化する方法が多く用いられるとともに、更に強磁性ト
ンネル接合素子の作成後に熱処理を行うことにより、磁
気抵抗変化率が改善されている。Although many oxides and nitrides have been reported as barrier layers, only the Al 2 O 3 film shows a high magnetoresistance ratio. Further, Al 2 is used as a barrier layer.
It has been reported that even when an O 3 film is used, the magnetoresistance change rate is greatly affected by the film formation method and conditions, and at present, there are many methods of oxidizing an Al film mainly in oxygen plasma. In addition to the use of the ferromagnetic tunnel junction device, a heat treatment is performed after the ferromagnetic tunnel junction device is manufactured, thereby improving the magnetoresistance ratio.
【０００５】[0005]
【発明が解決しようとする課題】強磁性トンネル接合素
子を磁気ヘッドや磁気メモリ等のデバイスに適用するに
は、熱雑音の影響を低減するために素子の抵抗値をある
程度低くする必要があるが、そのためにはバリア層とな
るＡｌ2Ｏ3膜を１ｎｍ以下の非常に薄い膜厚で形成する
必要がある。In order to apply a ferromagnetic tunnel junction device to a device such as a magnetic head or a magnetic memory, it is necessary to lower the resistance of the device to some extent in order to reduce the influence of thermal noise. For this purpose, it is necessary to form an Al 2 O 3 film serving as a barrier layer with a very small thickness of 1 nm or less.
【０００６】しかしながら、バリア層となるＡｌ2Ｏ3膜
をこのように薄くすると、抵抗値は下がるものの磁気抵
抗変化率も同時に劣化するという問題があった。これは
主にバリア層となるＡｌ2Ｏ3膜の形成方法に起因すると
考えられる。すなわち、１ｎｍ以下の非常に薄いＡｌ膜
を酸素プラズマ中で酸化する方法では、イオンやラジカ
ル状態の活性酸素をＡｌ膜の酸化に用いるので、薄いＡ
ｌ膜のみを選択的に酸化することは困難である。例え
ば、Ａｌ膜を十分に酸化しようとすると、バリア層に接
する強磁性層表面も部分的に酸化される可能性が高く、
一方、強磁性層の酸化を回避しようとすると、Ａｌ膜の
酸化が不十分となる。However, when the thickness of the Al 2 O 3 film serving as the barrier layer is reduced as described above, there is a problem that although the resistance value is reduced, the magnetoresistance ratio is also deteriorated. This is considered to be mainly due to the method of forming the Al 2 O 3 film serving as the barrier layer. That is, in the method of oxidizing a very thin Al film of 1 nm or less in oxygen plasma, active oxygen in the form of ions or radicals is used for oxidizing the Al film.
It is difficult to selectively oxidize only the 1 film. For example, if an attempt is made to sufficiently oxidize the Al film, it is highly possible that the surface of the ferromagnetic layer in contact with the barrier layer is also partially oxidized,
On the other hand, if an attempt is made to avoid oxidation of the ferromagnetic layer, oxidation of the Al film becomes insufficient.
【０００７】本発明の目的は、このような従来技術の課
題を解決し、実用に必要な抵抗値及び磁気抵抗変化率を
有する強磁性トンネル接合素子を提供することにある。An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a ferromagnetic tunnel junction device having a resistance value and a magnetoresistance change rate necessary for practical use.
【０００８】[0008]
【課題を解決するための手段】本発明は、上記目的を達
成するためになされたものであって、第１発明は、少な
くとも第１の強磁性層と第２の強磁性層の間にバリア層
を有する強磁性トンネル接合素子において、前記バリア
層が単一元素からなる絶縁体であることを特徴とするも
のである。SUMMARY OF THE INVENTION The present invention has been made to achieve the above-mentioned object, and a first invention is to provide at least a barrier between a first ferromagnetic layer and a second ferromagnetic layer. In a ferromagnetic tunnel junction device having a layer, the barrier layer is an insulator made of a single element.
【０００９】さらに、第２発明は、前記絶縁体は、不純
物を含有することを特徴とするものである。Further, the second invention is characterized in that the insulator contains impurities.
【００１０】また、第３発明は、前記絶縁体は、シリコ
ン、ダイアモンド、ダイアモンドライクカーボンのいず
れかであることを特徴とするものである。In a third aspect of the present invention, the insulator is any one of silicon, diamond, and diamond-like carbon.
【００１１】[0011]
【発明の実施の形態】以下、実施例１および実施例２を
例にあげ、本発明について詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to Embodiments 1 and 2 as examples.
【００１２】＜実施例１＞本発明の強磁性トンネル接合
素子に関する実施例１について、図面を参照して説明す
る。<First Embodiment> A first embodiment of the ferromagnetic tunnel junction device of the present invention will be described with reference to the drawings.
【００１３】図１に本発明の実施例１の強磁性トンネル
接合素子１の構造を示す。図１に示すように、基板１１
上に第１の配線層１２を介して第１の強磁性層１３、バ
リア層１４、第２の強磁性層１５が形成され、その上に
絶縁層１６を介して第２の配線層１７が形成されてい
る。FIG. 1 shows the structure of a ferromagnetic tunnel junction device 1 according to a first embodiment of the present invention. As shown in FIG.
A first ferromagnetic layer 13, a barrier layer 14, and a second ferromagnetic layer 15 are formed thereon via a first wiring layer 12, and a second wiring layer 17 is provided thereon via an insulating layer 16. Is formed.
【００１４】このような強磁性トンネル接合素子１の作
成方法を以下に示す。A method for manufacturing such a ferromagnetic tunnel junction device 1 will be described below.
【００１５】高周波マグネトロンスパッタ装置内で表面
を熱酸化したＳｉ基板１１上に５０ｎｍ厚のＡｌ膜から
なる第１の配線層１２、１０ｎｍ厚のＦｅ膜からなる第
１の強磁性層１３、１ｎｍ厚のＳｉ膜からなるバリア層
１４、２０ｎｍ厚のＣｏＦｅ膜からなる第２の強磁性層
１５を連続して成膜した。スパッタ条件は、Ａｒ圧力＝
５ｍＴｏｒｒ、高周波電力＝２００Ｗ（ターゲット径＝
４インチ）である。A first wiring layer 12 made of a 50 nm thick Al film, a first ferromagnetic layer 13 made of a 10 nm thick Fe film, and a 1 nm thick The barrier layer 14 made of a Si film and the second ferromagnetic layer 15 made of a CoFe film having a thickness of 20 nm were continuously formed. The sputtering conditions were as follows: Ar pressure =
5 mTorr, high frequency power = 200 W (target diameter =
4 inches).
【００１６】比較のため、バリア層１４となる上記Ｓｉ
膜の代わりに、１ｎｍ厚のＡｌ膜を形成した後、同一真
空中で酸素プラズマによりＡｌ膜を酸化してＡｌ2Ｏ3膜
とした多層膜も作成した。For the sake of comparison, the Si
Instead of the film, a 1 nm thick Al film was formed, and then the Al film was oxidized by oxygen plasma in the same vacuum to form an Al 2 O 3 film.
【００１７】次に、通常のフォトリソグラフィ技術とイ
オンミリング技術を用いて、上記の多層膜を下部配線形
状に加工した。さらに、第２の強磁性層１５上に接合寸
法を規定するためのレジストパターンを形成し、第１の
強磁性層１３までイオンミリングした。このレジストを
残したまま３００ｎｍ厚のＳｉＯ2膜からなる絶縁層１
６を高周波マグネトロンスパッタ装置で成膜した後、レ
ジストのリフトオフを行った。Next, the above-mentioned multilayer film was processed into a lower wiring shape by using ordinary photolithography technology and ion milling technology. Further, a resist pattern for defining a junction size was formed on the second ferromagnetic layer 15, and ion milling was performed up to the first ferromagnetic layer 13. An insulating layer 1 made of a 300 nm thick SiO 2 film while leaving this resist
After the film No. 6 was formed by a high-frequency magnetron sputtering apparatus, the resist was lifted off.
【００１８】次に、２００ｎｍ厚のＡｌ膜からなる第２
の配線層１７を高周波マグネトロンスパッタ装置で成膜
した後、通常のフォトリソグラフィ技術とＲＩＥ技術を
用いて上部配線を形成し、強磁性トンネル接合素子１を
完成した。Next, a second Al film having a thickness of 200 nm is formed.
After forming the wiring layer 17 with a high-frequency magnetron sputtering apparatus, an upper wiring was formed by using a normal photolithography technique and an RIE technique, thereby completing the ferromagnetic tunnel junction device 1.
【００１９】このようにして形成した強磁性トンネル接
合素子１の磁気抵抗変化率を測定したところ、バリア層
としてＳｉ（シリコン）膜を使用した場合には、バリア
層としてＡｌ2Ｏ3膜を使用した場合よりも大きな磁気抵
抗変化率と低い接合抵抗が得られた。このことはＳｉ
（シリコン）膜の方がＡｌ2Ｏ3膜よりも、強磁性層が酸
化されること無く、バリア層との界面が均一となること
を示している。When the magnetoresistance ratio of the ferromagnetic tunnel junction device 1 thus formed was measured, when the Si (silicon) film was used as the barrier layer, the Al 2 O 3 film was used as the barrier layer. As a result, a larger magnetoresistance change rate and a lower junction resistance were obtained. This means that Si
This indicates that the (silicon) film has a more uniform interface with the barrier layer without oxidation of the ferromagnetic layer than the Al 2 O 3 film.
【００２０】上記の実施例においては、バリア層１４と
してＳｉ（シリコン）膜を使用したが、炭素元素から成
るダイヤモンド膜或いはダイヤモンドライクカーボン
（ＤＬＣ）膜であっても構わない。In the above embodiment, the Si (silicon) film is used as the barrier layer 14. However, a diamond film or a diamond-like carbon (DLC) film made of a carbon element may be used.
【００２１】＜実施例２＞本発明の強磁性トンネル接合
素子に関する実施例２について説明する。本実施例にお
いては実施例１のＳｉ（シリコン）膜を形成後にＰをイ
オン打込み装置で微量添加する。それ以外については実
施例１と同様である。<Embodiment 2> Embodiment 2 of the ferromagnetic tunnel junction device of the present invention will be described. In this embodiment, after forming the Si (silicon) film of the first embodiment, a small amount of P is added by an ion implantation apparatus. Otherwise, it is the same as the first embodiment.
【００２２】本実施例で形成した強磁性トンネル接合素
子は実施例１と比較して、磁気抵抗変化率が向上し、接
合抵抗は低くなった。この結果は、バリア層となるＳｉ
（シリコン）膜中にＰを微量添加することにより、Ｓｉ
（シリコン）膜中に不純物準位が形成され、その結果、
共鳴現象が生じたためである。The ferromagnetic tunnel junction device formed in this embodiment has a higher magnetoresistance change rate and lower junction resistance than the first embodiment. This result indicates that Si
(Si) By adding a small amount of P into the film,
An impurity level is formed in the (silicon) film, and as a result,
This is because a resonance phenomenon has occurred.
【００２３】本実施例においては、Ｐを微量添加した
が、それ以外にもＡｓ等を微量添加しても構わない。In this embodiment, a small amount of P is added, but a small amount of As or the like may be added.
【００２４】また、実施例１と同様に、バリア層として
Ｓｉ（シリコン）膜以外にダイヤモンド膜やＤＬＣ膜で
あっても構わない。As in the first embodiment, the barrier layer may be a diamond film or a DLC film other than the Si (silicon) film.
【００２５】また、上記の実施例１および２において、
強磁性トンネル接合素子は二つの強磁性層とバリア層と
で構成されているが、磁気ヘッドや磁気メモリへの応用
に際しては、片側の強磁性層の磁化方向を反強磁性層と
の交換結合で固定する等の方策が必要なことは明らかで
ある。In Examples 1 and 2 described above,
A ferromagnetic tunnel junction device is composed of two ferromagnetic layers and a barrier layer. When applied to a magnetic head or magnetic memory, the magnetization direction of one ferromagnetic layer is exchange-coupled with the antiferromagnetic layer. It is clear that a measure such as fixing with is necessary.
【００２６】[0026]
【発明の効果】本発明によれば、バリア層が非常に薄い
場合でも、バリア層と強磁性層の界面を均一に形成する
ことが可能となり、磁気抵抗変化率を低下させることな
く、接合抵抗を低くすることができる。更にまた、不純
物準位の導入が可能となり、強磁性トンネル接合素子の
特性を向上することができる。According to the present invention, even when the barrier layer is very thin, the interface between the barrier layer and the ferromagnetic layer can be formed uniformly, and the junction resistance can be reduced without reducing the magnetoresistance ratio. Can be lowered. Furthermore, the introduction of impurity levels becomes possible, and the characteristics of the ferromagnetic tunnel junction device can be improved.
【図１】本発明の実施例１の強磁性トンネル接合素子の
構造図である。FIG. 1 is a structural diagram of a ferromagnetic tunnel junction device according to a first embodiment of the present invention.
１ 強磁性トンネル接合素子 １１ 基板 １２ 第１の配線層 １３ 第１の強磁性層 １４ バリア層 １５ 第２の強磁性層 １６ 絶縁層 １７ 第２の配線層 DESCRIPTION OF SYMBOLS 1 Ferromagnetic tunnel junction element 11 Substrate 12 1st wiring layer 13 1st ferromagnetic layer 14 Barrier layer 15 2nd ferromagnetic layer 16 Insulating layer 17 2nd wiring layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 林 秀和 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 Ｆターム(参考） 5D034 BA03 BA15 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hidekazu Hayashi 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka F-term (reference) 5D034 BA03 BA15
Claims (3)
性層の間にバリア層を有する強磁性トンネル接合素子に
おいて、 前記バリア層が単一元素からなる絶縁体であることを特
徴とする強磁性トンネル接合素子。1. A ferromagnetic tunnel junction device having a barrier layer between at least a first ferromagnetic layer and a second ferromagnetic layer, wherein the barrier layer is an insulator made of a single element. Ferromagnetic tunnel junction device.
特徴とする請求項１記載の強磁性トンネル接合素子。2. The ferromagnetic tunnel junction device according to claim 1, wherein the insulator contains an impurity.
ド、ダイアモンドライクカーボンのいずれかであること
を特徴とする請求項１または２記載の強磁性トンネル接
合素子。3. The ferromagnetic tunnel junction device according to claim 1, wherein the insulator is any one of silicon, diamond, and diamond-like carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35104999A JP2001168417A (en) | 1999-12-10 | 1999-12-10 | Ferromagnetic tunnel junction element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35104999A JP2001168417A (en) | 1999-12-10 | 1999-12-10 | Ferromagnetic tunnel junction element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001168417A true JP2001168417A (en) | 2001-06-22 |
Family
ID=18414705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35104999A Pending JP2001168417A (en) | 1999-12-10 | 1999-12-10 | Ferromagnetic tunnel junction element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001168417A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227771B2 (en) | 2003-03-14 | 2007-06-05 | Tdk Corporation | Magnetoresistive effect element and magnetic memory device |
| US7295460B2 (en) | 2003-03-28 | 2007-11-13 | Tdk Corporation | Magnetic memory cell, magnetic memory device, and method of manufacturing magnetic memory device |
| JP2009049351A (en) * | 2007-08-21 | 2009-03-05 | Northern Lights Semiconductor Corp | Apparatus for storing electrical energy |
-
1999
- 1999-12-10 JP JP35104999A patent/JP2001168417A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227771B2 (en) | 2003-03-14 | 2007-06-05 | Tdk Corporation | Magnetoresistive effect element and magnetic memory device |
| US7295460B2 (en) | 2003-03-28 | 2007-11-13 | Tdk Corporation | Magnetic memory cell, magnetic memory device, and method of manufacturing magnetic memory device |
| JP2009049351A (en) * | 2007-08-21 | 2009-03-05 | Northern Lights Semiconductor Corp | Apparatus for storing electrical energy |
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