JP2001158998A - Continuous plating method for ni-w alloy - Google Patents

Continuous plating method for ni-w alloy

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Publication number
JP2001158998A
JP2001158998A JP34178599A JP34178599A JP2001158998A JP 2001158998 A JP2001158998 A JP 2001158998A JP 34178599 A JP34178599 A JP 34178599A JP 34178599 A JP34178599 A JP 34178599A JP 2001158998 A JP2001158998 A JP 2001158998A
Authority
JP
Japan
Prior art keywords
plating
anode
nickel
alloy
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34178599A
Other languages
Japanese (ja)
Other versions
JP3104704B1 (en
Inventor
Tsutomu Morikawa
務 森河
Masayuki Yokoi
昌幸 横井
Takao Nakade
卓男 中出
Yukihiro Sato
幸弘 佐藤
Kohei Ishida
幸平 石田
Susumu Yuya
進 湯屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UINGU KK
Nomura Plating Co Ltd
Osaka Prefecture
Original Assignee
UINGU KK
Nomura Plating Co Ltd
Osaka Prefecture
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UINGU KK, Nomura Plating Co Ltd, Osaka Prefecture filed Critical UINGU KK
Priority to JP11341785A priority Critical patent/JP3104704B1/en
Application granted granted Critical
Publication of JP3104704B1 publication Critical patent/JP3104704B1/en
Publication of JP2001158998A publication Critical patent/JP2001158998A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To allow continuous plating without aging a plating liquid in electroplating of an Ni-W alloy. SOLUTION: A plating device of a two-tank structure separated to an anode chamber and a plating chamber by using a cation exchange membrane is used in the electroplating of the Ni-W alloy, by which the oxidation decomposition of an organic complexing agent contained in the plating liquid on anodes is suppressed. The nickel component and tungsten component in the plating liquid are replenished according to a deposition quantity by using the two soluble anodes of metal nickel and metal tungsten, by which the continuous plating is executed without aging the plating liquid.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、硬さが高く、耐摩
耗性ならびに耐食性に優れたNi−W合金の電気めっき
の形成に関するものであり、成形金型、鋳造鋳型、ロー
ルなどの厚めっきとしての工業用めっき、電子部品、装
飾性の小物などへのめっき皮膜を提供するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of an electroplated Ni-W alloy having high hardness, excellent wear resistance and excellent corrosion resistance, and relates to thick plating of a forming die, a casting mold and a roll. The present invention provides plating films for industrial plating, electronic components, decorative small items, and the like.

【0002】[0002]

【従来の技術】Ni−W合金の電気めっき液において
は、タングステン成分として、タングステン酸のナトリ
ウムやアンモニウムなどの塩が用いられている。このタ
ングステン酸イオンは、めっき液のpHが4以下の酸性
になるとタングステン酸の溶解度が著しく低いため、供
せられるめっき液のpHは5から12程度に維持され
る。一方、めっき液の合金めっき成分であるニッケルイ
オン等は、このpH範囲では水酸化物を形成し沈殿して
しまう。このため、めっき液には、タングステン酸イオ
ンならびにニッケルイオンを錯化させ、めっき液中で安
定に存在させるために有機錯化剤が添加されている。こ
の有機錯化剤としては、クエン酸、マロン酸、酒石酸な
どのナトリウム、カリウム、アンモニウム塩等が用いら
れている。
2. Description of the Related Art In an electroplating solution of a Ni--W alloy, salts of sodium or ammonium tungstate are used as a tungsten component. Since the solubility of tungstic acid is extremely low when the pH of the plating solution becomes acidic at 4 or less, the pH of the provided plating solution is maintained at about 5 to 12. On the other hand, nickel ions and the like, which are alloy plating components of the plating solution, form hydroxides and precipitate in this pH range. For this reason, an organic complexing agent is added to the plating solution in order to complex tungstate ions and nickel ions and to make them stably exist in the plating solution. As the organic complexing agent, sodium, potassium, ammonium salts such as citric acid, malonic acid and tartaric acid are used.

【0003】タングステン合金の電気めっきでは、陽極
には電気ニッケル、白金、ステンレス等が用いられる。
これらの陽極は、めっき過程においては、ほとんど溶解
しない。このため、めっき時においては、陽極上でクエ
ン酸などの有機錯化剤の酸化分解反応と酸素発生が生じ
る。有機錯化剤の酸化分解においては、カルボキシル基
成分の酸化による二酸化炭素発生と残存部分の酸化やア
ミノ化を受け、複雑な構造を有する有機ポリマーが生成
する。有機錯化剤が陽極で分解すると、めっき液中の錯
化剤濃度の低下によるタングステン酸塩の沈殿生成とそ
れに伴うめっき皮膜の合金成分の変動、分解生成物の蓄
積によるめっき応力の増加ならびにめっき皮膜の割れ、
ピットなどの欠陥が発生するため、一定時間電解した後
のめっき液は老化廃液として処分される。
In the electroplating of a tungsten alloy, nickel, platinum, stainless steel or the like is used for the anode.
These anodes hardly dissolve during the plating process. Therefore, during plating, an oxidative decomposition reaction of an organic complexing agent such as citric acid and oxygen generation occur on the anode. In the oxidative decomposition of the organic complexing agent, carbon dioxide is generated by oxidation of the carboxyl group component, and the remaining portion is oxidized and aminated to produce an organic polymer having a complicated structure. When the organic complexing agent decomposes at the anode, the precipitation of tungstate due to a decrease in the concentration of the complexing agent in the plating solution and the resulting change in the alloy composition of the plating film, an increase in plating stress due to the accumulation of decomposition products, and plating Cracking of the film,
Since a defect such as a pit occurs, the plating solution after being electrolyzed for a certain period of time is disposed as an aging waste solution.

【0004】このため、めっき過程における有機錯化剤
の分解反応を抑制する陽極として金属酸化物陽極が開発
されている。このような電極としては、特開昭63−2
03800号のイリジウムとタンタル複合酸化物やルテ
ニウムとチタンの酸化物からなる貴金属酸化物などが用
いられている。これらの電極をタングステン合金めっき
に利用する場合には、めっき液中の錯化剤の分解速度は
ステンレス電極の1/5に低下できると言われている。
しかし、これらの電極は、その作製方法が複雑で高額で
あり、電極表面全体において均一な電極触媒性を維持し
たものの作製が困難であるほか、連続めっき使用におい
て電極表面の酸化物層の性能低下や電極寿命の問題など
がある。また、このような金属酸化物電極をたとえ用い
たとしても、陽極での有機錯化剤の酸化分解反応を完全
に抑制することはできず、その液寿命の延命にとどまる
ものであった。
[0004] Therefore, a metal oxide anode has been developed as an anode for suppressing the decomposition reaction of the organic complexing agent in the plating process. Such an electrode is disclosed in
No. 03800, a noble metal oxide composed of an oxide of iridium and tantalum or an oxide of ruthenium and titanium is used. When these electrodes are used for tungsten alloy plating, it is said that the decomposition rate of the complexing agent in the plating solution can be reduced to 1/5 that of stainless steel electrodes.
However, these electrodes are complicated and expensive to fabricate, making it difficult to produce electrodes that maintain uniform electrode catalysis over the entire electrode surface.In addition, the performance of the oxide layer on the electrode surface deteriorates when continuous plating is used. And the problem of electrode life. Further, even if such a metal oxide electrode is used, the oxidative decomposition reaction of the organic complexing agent at the anode cannot be completely suppressed, and the life of the solution is only extended.

【0005】タングステン合金の電気めっきを連続的に
行う場合には、不溶性の陽極を用いるため、めっき皮膜
として析出することによって消耗しためっき金属イオン
とタングステン酸イオンの補給法が必要である。陽極に
ニッケル電極を用いることによってニッケル陽極を20
から40%の効率で溶解させることは可能であるが、前
述のようにニッケル陽極ではクエン酸の分解反応が生じ
るため、連続めっきにおいて望ましいものではない。ク
エン酸の分解が起こりにくいとされるステンレスや貴金
属酸化物電極などの不溶性陽極を用いる場合には、陽極
からのニッケルの補給はない。このため、めっき時間に
応じて硫酸ニッケルなどのニッケル塩を補給しなければ
ならない。この場合、めっき時間に応じてめっき液中に
硫酸イオンが蓄積する。
When a tungsten alloy is electroplated continuously, an insoluble anode is used. Therefore, a method of replenishing plating metal ions and tungstate ions consumed by deposition as a plating film is required. By using a nickel electrode for the anode, a nickel
Although it is possible to dissolve it with an efficiency of 40% to 40%, it is not desirable in continuous plating because the decomposition reaction of citric acid occurs at the nickel anode as described above. When using an insoluble anode, such as a stainless steel or a noble metal oxide electrode, in which it is difficult for citric acid to decompose, nickel is not supplied from the anode. For this reason, a nickel salt such as nickel sulfate must be supplied in accordance with the plating time. In this case, sulfate ions accumulate in the plating solution according to the plating time.

【0006】一方、めっき皮膜として析出したタングス
テン酸イオンの補給法としては、タングステン酸のナト
リウムやアンモニウム塩などが用いられる。特開昭63
−203800号では、特にタングステン酸イオンの補
給方法としてパラタングステン酸アンモニウムとクエン
酸の混合液による補給法が提案されている。この場合に
もタングステン酸イオンの補給のために添加された塩の
成分であるナトリウムイオンならびにアンモニウムイオ
ン、クエン酸イオン等は補給につれてめっき液中に蓄積
する。特開平4−214892号ではタングステン酸塩
の連続補給装置が考案されているが、アンモニウム塩と
クエン酸分解生成物の蓄積は避けられない。めっき反応
に関係しない硫酸イオンやアンモニウムイオン、ナトリ
ウムイオン等がめっき液に一定量以上に蓄積する場合に
は、めっき液の粘性の増加、薬品の沈殿生成、めっき皮
膜の組成や物性の変化、高電流密度領域での焼け、めっ
き皮膜のピット、クラック等のめっき欠陥が生じる。こ
のため金属塩の補給は一定量に限られており、一定時間
めっきした液は、老化廃液として破棄される。
On the other hand, as a method for replenishing tungstate ions deposited as a plating film, sodium or ammonium salts of tungstate are used. JP 63
JP-203800 proposes a replenishment method using a mixed solution of ammonium paratungstate and citric acid, particularly as a replenishment method for tungstate ions. Also in this case, sodium ion, ammonium ion, citrate ion, and the like, which are components of the salt added for replenishment of tungstate ions, accumulate in the plating solution as replenishment. In Japanese Patent Application Laid-Open No. 4-214892, a continuous replenishment device for tungstate is devised, but accumulation of ammonium salts and citrate decomposition products is inevitable. If sulfate ions, ammonium ions, sodium ions, etc. unrelated to the plating reaction accumulate in the plating solution in a certain amount or more, the viscosity of the plating solution increases, the precipitation of chemicals occurs, the composition and physical properties of the plating film change, and Plating defects such as burning, pits and cracks in the plating film occur in the current density region. For this reason, the replenishment of the metal salt is limited to a certain amount, and the solution plated for a certain time is discarded as an aging waste solution.

【0007】陽極において有機錯化剤より卑な電位で分
解されるギ酸などの犠牲陽極分解剤をめっき液に添加す
ることによって有機錯化剤の分解速度を低下させ、浴寿
命を延命させる方法としては特開平11−229176
号がある。この方法では、犠牲陽極分解剤の効果により
有機錯化剤の分解を抑えることが可能であるが、陽極電
流密度を2A/dm2 以下の低い領域に保たなければ、
クエン酸の分解が起こる。この電流密度は、限られため
っき槽内で達成することが難しいことが多いため、有機
錯化剤の分解を完全に抑制するものではない。また、ニ
ッケルの補給法としては、犠牲陽極分解剤の成分を含む
ギ酸ニッケルなどの薬品が使われるが、浴中のニッケル
成分を保つには補給を頻繁に繰り返す必要があり、その
間におけるめっき液組成の変動ならびに作業の煩雑さを
伴う。
[0007] A method of adding a sacrificial anodizing agent such as formic acid, which is decomposed at a lower potential than the organic complexing agent at the anode, to the plating solution to reduce the decomposition rate of the organic complexing agent and prolong the bath life. Is Japanese Patent Application Laid-Open No. H11-229176.
There is a number. In this method, the decomposition of the organic complexing agent can be suppressed by the effect of the sacrificial anodic decomposition agent, but unless the anodic current density is kept in a low region of 2 A / dm 2 or less.
Decomposition of citric acid occurs. Since this current density is often difficult to achieve in a limited plating tank, it does not completely suppress the decomposition of the organic complexing agent. As a method of replenishing nickel, a chemical such as nickel formate containing a component of a sacrificial anodic decomposition agent is used. To maintain the nickel component in the bath, replenishment must be repeated frequently, and the plating solution composition during that time is required. And the work is complicated.

【0008】[0008]

【発明が解決しようとする課題】上述したように、タン
グステン合金の電気めっきでは、めっき液成分である有
機錯化剤を陽極で分解させないこと、並びに、薬品補給
により硫酸イオン、ナトリウムイオン、アンモニウムイ
オン等が蓄積しない連続めっき法を確立することがその
工業的利用において必要である。
As described above, in the electroplating of tungsten alloy, the organic complexing agent, which is a component of the plating solution, is not decomposed at the anode, and sulfate ions, sodium ions, and ammonium ions are supplied by chemical replenishment. It is necessary for the industrial use to establish a continuous plating method that does not accumulate.

【0009】本発明は、タングステン合金の電気めっき
における上述の欠点を克服することを目的とするもので
あり、めっき液の有効成分である有機錯化剤の酸化分解
を防止できるめっき装置を提供することを課題とする。
また、連続めっきする場合の金属イオンを可溶性陽極を
用いて補給し、補給液の成分である硫酸イオン、ナトリ
ウムイオン、アンモニウムイオン等を蓄積させないよう
にして廃浴がでない連続めっき方法を提供することを課
題とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a plating apparatus capable of preventing the oxidative decomposition of an organic complexing agent, which is an effective component of a plating solution, in order to overcome the above-mentioned drawbacks in the electroplating of a tungsten alloy. That is the task.
Also, to provide a continuous plating method that does not use a waste bath by replenishing metal ions in the case of continuous plating using a soluble anode so as not to accumulate sulfate ions, sodium ions, ammonium ions, and the like that are components of the replenishing solution. As an issue.

【0010】[0010]

【課題を解決するための手段】本発明では、ステンレ
ス、白金などの不溶性陽極とめっき液が接触しないよう
にするために、陽極とめっき室の間にカチオン選択性の
隔膜を固着し、さえぎった2槽からなるめっき装置を用
いる。めっき液と陽極液をさえぎるための隔膜として
は、粒子や分子の大きさの選択性があるセロファン、布
あるいはイオン選択性のあるアニオン交換膜、カチオン
交換膜などの膜を用いることが可能である。本発明にお
いては、Ni−W合金めっき液中でのクエン酸等の有機
錯化剤の存在状態がアニオンであるためアニオンを透過
しない選択性膜として、請求項に記述したカチオン交換
膜に限定し、これを陽極室とめっき室間の隔膜として用
いる。
According to the present invention, a cation-selective diaphragm is fixed between the anode and the plating chamber to prevent the insoluble anode such as stainless steel and platinum from coming into contact with the plating solution. A plating apparatus consisting of two tanks is used. As a diaphragm for blocking the plating solution and the anolyte, it is possible to use a membrane such as cellophane having selectivity of particle or molecule size, cloth or anion exchange membrane having ion selectivity, and cation exchange membrane. . In the present invention, the presence of the organic complexing agent such as citric acid in the Ni-W alloy plating solution is an anion, so that the anion does not pass through the cation exchange membrane as a selective membrane. This is used as a diaphragm between the anode chamber and the plating chamber.

【0011】カチオン交換膜によって不溶性陽極がある
陽極室とめっき室とを分離すると、クエン酸などの有機
錯化剤のアニオンはカチオン交換膜を透過できない。一
方、水素イオンなどのカチオンは、カチオン交換膜を容
易に透過することができ、隔膜による大きな電気抵抗は
生じない。カチオン交換膜を用いることにより、不溶性
陽極とめっき液の直接的接触が妨げられるとともに、め
っき液のアニオンの陽極室への移動は起こらない。この
ため、連続めっきしてもめっき液の有効成分である有機
錯化剤の陽極上での酸化分解は完全に阻止することがで
きる。
When the anode compartment where the insoluble anode is located and the plating compartment are separated by a cation exchange membrane, anions of an organic complexing agent such as citric acid cannot pass through the cation exchange membrane. On the other hand, cations such as hydrogen ions can easily permeate the cation exchange membrane, and no large electrical resistance is generated by the diaphragm. By using the cation exchange membrane, direct contact between the insoluble anode and the plating solution is prevented, and the migration of anions of the plating solution to the anode chamber does not occur. Therefore, even when continuous plating is performed, the oxidative decomposition of the organic complexing agent, which is an effective component of the plating solution, on the anode can be completely prevented.

【0012】陽極室における溶液成分としては、塩酸、
硝酸ならびにその塩を除くニッケル塩あるいは硫酸など
が用いることができる。塩酸ならびに硝酸とその塩は、
不溶性陽極上で、有害な塩素ガス、酸化窒素ガスを発生
するため用いられない。ニッケルを含む硫酸塩を用いる
場合には、不溶性陽極上での酸素発生により、陽極液は
次第に希硫酸に変化する。なお、不溶性陽極で発生した
水素イオンは、通電流量に応じてカチオン交換膜を透過
することができ、めっき室に運ばれるので、陽極室濃度
は一定に保たれている。陽極室の容積は、めっき室のp
Hに影響しないように、小さいものが望まれる。また、
不溶性陽極の構造と配置は、発生した酸素ガスがすみや
かに電極から離脱し液移動が容易なメッシュ構造が望ま
しい。
The solution components in the anode compartment include hydrochloric acid,
Nickel salts other than nitric acid and its salts or sulfuric acid can be used. Hydrochloric acid, nitric acid and its salts
It is not used because it generates harmful chlorine gas and nitric oxide gas on the insoluble anode. When a sulfate containing nickel is used, the anolyte gradually changes to dilute sulfuric acid due to the generation of oxygen on the insoluble anode. The hydrogen ions generated at the insoluble anode can pass through the cation exchange membrane according to the flow rate of the current and are carried to the plating chamber, so that the concentration of the anode chamber is kept constant. The volume of the anode chamber is p
A small one is desired so as not to affect H. Also,
The structure and arrangement of the insoluble anode are desirably a mesh structure in which the generated oxygen gas is quickly separated from the electrode and liquid movement is easy.

【0013】カチオン交換膜を用いためっき槽を用いて
連続めっきする場合には、めっき室では電析反応によ
り、めっき液中のニッケルイオンは減少する。これを補
給するために、金属ニッケル陽極が用いられる。この金
属ニッケル陽極としては、電解ニッケル、S−ニッケル
など公知のニッケルめっきに利用できる板、チップなど
が挙げられる。チップを利用する場合には、チタン製の
バスケットに入れて使用する。ニッケル陽極の溶解状態
はカチオンであるため、この金属ニッケル極の配置は、
めっき室あるいは陽極室のいずれの槽内に配置しても良
い。なお、陽極として電解ニッケル陽極を使う場合に
は、ニッケルが100%の陽極効率となるようにめっき
液に塩化物イオンを微量添加しなければならない。S−
ニッケルでは、塩化物イオンの有無にかかわらず通電し
た電気量に応じてニッケルを溶解させることができるた
め、あえて塩化物を添加する必要はない。
In the case of continuous plating using a plating tank using a cation exchange membrane, nickel ions in a plating solution are reduced by an electrodeposition reaction in a plating chamber. To replenish this, a metallic nickel anode is used. Examples of the metal nickel anode include plates and chips that can be used for known nickel plating such as electrolytic nickel and S-nickel. When chips are used, they are used in a titanium basket. Since the dissolution state of the nickel anode is cationic, the arrangement of the metal nickel electrode is as follows:
It may be arranged in either the plating chamber or the anode chamber. When an electrolytic nickel anode is used as the anode, a very small amount of chloride ions must be added to the plating solution so that nickel has an anode efficiency of 100%. S-
Nickel can be dissolved according to the amount of electricity supplied regardless of the presence or absence of chloride ions, so there is no need to add chloride.

【0014】同様に、タングステン成分もめっき皮膜へ
の取り込みによりめっき液中の濃度は減少する。めっき
液へのタングステン酸の補給法としては、タングステン
酸のナトリウム塩やアンモニウム塩などを補給する方法
がある。しかし、前述したように、これらの塩をめっき
液に連続して補給するとナトリウム、アンモニウムイオ
ンがめっき液に蓄積する。これを防止するには、金属タ
ングステンを陽極に用い、タングステン成分をめっき液
に補給する。タングステン陽極としては、板状あるいは
チップ状のものが用いられる。チップを利用する場合に
は、チタン製のバスケットに入れて使用する。
Similarly, the concentration of the tungsten component in the plating solution is reduced by the incorporation into the plating film. As a method of replenishing the plating solution with tungstic acid, there is a method of replenishing a sodium salt or an ammonium salt of tungstic acid. However, as described above, when these salts are continuously supplied to the plating solution, sodium and ammonium ions accumulate in the plating solution. To prevent this, metal tungsten is used for the anode, and a tungsten component is supplied to the plating solution. A plate-shaped or chip-shaped tungsten anode is used. When chips are used, they are used in a titanium basket.

【0015】前記のめっき槽を用いて、金属ニッケル、
金属タングステンを陽極に用いて連続めっきするには、
金属ニッケル、金属タングステン、不溶性陽極の各電極
に流す電流を、めっき皮膜の析出反応に応じて制御する
ことが肝要である。例えば、タングステンを35wt%
含むめっき皮膜でその析出電流効率が60%であるなら
ば、めっき皮膜のタングステン析出量に応じた電流をタ
ングステン陽極に、ニッケル析出量に応じた電流をニッ
ケル陽極に、その残りの水素発生量に応じた電流を不溶
性陽極に通じる必要がある。この電流値は、Ni−W合
金めっきで得られる任意の組成のめっき皮膜に応じて変
化させることによって、連続めっきにおけるめっき液の
イオン組成、pHを一定に保つことができる。表1に、
めっき皮膜の電流効率とタングステン含有量での各陽極
への電流分担比の例を示す。
[0015] Using the above plating bath, metallic nickel,
To perform continuous plating using metal tungsten as the anode,
It is important to control the current flowing to each of the metal nickel, metal tungsten, and insoluble anode in accordance with the deposition reaction of the plating film. For example, 35 wt% of tungsten
If the deposition current efficiency of the plating film containing is 60%, the current according to the tungsten deposition amount of the plating film is applied to the tungsten anode, the current corresponding to the nickel deposition amount is applied to the nickel anode, and the remaining hydrogen generation amount is increased. A corresponding current must be passed through the insoluble anode. By changing this current value according to the plating film having an arbitrary composition obtained by Ni-W alloy plating, the ionic composition and pH of the plating solution in continuous plating can be kept constant. In Table 1,
The example of the current sharing ratio to each anode by the current efficiency of a plating film and tungsten content is shown.

【表1】 [Table 1]

【0016】なお、めっき槽からポンプ等で別槽にめっ
き液を汲み出し、そこで金属ニッケル陽極ならびに金属
タングステン陽極を電解して金属イオン成分を補給して
元のめっき槽に戻すような場合にも請求項1のめっき装
置を用いることができる。
[0016] In the case where the plating solution is pumped out of the plating tank to a separate tank by a pump or the like, the metal nickel anode and the metal tungsten anode are electrolyzed to supply metal ion components and return to the original plating tank. Item 1 can be used.

【0017】[0017]

【発明の実施の形態】(実施例1)図1に基づいて、実
施例1のめっき装置の構造を説明する。1はめっき室、
2は陽極室であり、陽極室2とめっき室1との間に設け
た孔3にはカチオン交換膜4を配してある。5は不溶性
陽極であり、白金チタン電極、鉛、白金、貴金属酸化電
極などが利用できる。6は金属ニッケル陽極であり、金
属板あるいはチップが用いられる。なお、ニッケルがチ
ップである場合は、一般のチタンバスケットに収納し陽
極とする。金属ニッケル陽極6の位置は、めっき室1あ
るいは陽極室2のいずれにも設置できる。7は金属タン
グステン陽極で、金属板、金属チップなどが利用でき
る。金属チップの場合には、一般のチタンバスケットに
収納し陽極とする。8はめっき品である。9,10,1
1は電流計であり、各陽極5,6,7に流れる直流電流
を計測し、計算量の電流になるように12,13,14
の直流電源を制御する。各陽極5,6,7に流れる直流
電流の制御は分配器ならびに抵抗を用いると、電源の数
を減じることができる。
(Embodiment 1) The structure of a plating apparatus of Embodiment 1 will be described with reference to FIG. 1 is a plating room,
Reference numeral 2 denotes an anode chamber, and a cation exchange membrane 4 is provided in a hole 3 provided between the anode chamber 2 and the plating chamber 1. Reference numeral 5 denotes an insoluble anode, and a platinum titanium electrode, lead, platinum, a noble metal oxide electrode, or the like can be used. Reference numeral 6 denotes a metal nickel anode, which is a metal plate or a chip. When nickel is used as a chip, it is housed in a general titanium basket and used as an anode. The position of the metal nickel anode 6 can be set in either the plating chamber 1 or the anode chamber 2. Reference numeral 7 denotes a metal tungsten anode, which may be a metal plate, a metal chip, or the like. In the case of a metal chip, it is housed in a general titanium basket and used as an anode. 8 is a plated product. 9,10,1
Reference numeral 1 denotes an ammeter, which measures a direct current flowing through each of the anodes 5, 6, and 7, and measures 12, 13, and 14 so that the current becomes a calculated amount.
To control the DC power supply. The control of the direct current flowing through each of the anodes 5, 6, and 7 can reduce the number of power supplies by using a distributor and a resistor.

【0018】Ni−W合金めっき液として、硫酸ニッケ
ル0.2M、タングステン酸ナトリウム0.2M、クエ
ン酸アンモニウム0.4M、ギ酸ナトリウム0.2Mの
めっき液5Lを用いて、図1に示す構造のめっき装置を
用いて連続めっきを行った。不溶性陽極には、DSA電
極(酸化ルテニウム付きチタン板)とし、陽極室の液量
は約0.3Lとした。ニッケル陽極にはS−ニッケルチ
ップ(約100g)を入れたチタンバスケット、タング
ステン陽極には、金属タングステンチップ(約100
g)を入れたチタンバスケットを用いた。めっき品であ
る陰極に銅板(面積0.5dm2 )を用いて、液温65
℃、pH6.0、通電量5A(めっき電流密度10A/
dm2 )のめっき条件で連続めっきを行った。なお、め
っき時はめっきの析出効率に応じ、DSA電極に2.2
A、ニッケル電極に1.8A、タングステン電極に1.
0Aの電流を通じ、その析出量に応じて微調整した。連
続めっき時においては、ニッケルチップならびにタング
ステンチップを各陽極バスケットに適宜補給し、陽極室
に純水を補給した。電解時間100時間後においても異
臭ならびに沈殿生成はまったく認められず、めっき液の
pHの変動も0.3以下であった。得られためっき皮膜
は、図2に示すようにW含有量約35〜40%、めっき
電流効率約60%と安定していた。ニッケルならびにタ
ングステンの各陽極の溶解効率は、約102%であっ
た。また、めっき液中のクエン酸は、100時間後も減
少しなかった。
As a Ni-W alloy plating solution, 5 L of a plating solution of nickel sulfate 0.2 M, sodium tungstate 0.2 M, ammonium citrate 0.4 M and sodium formate 0.2 M was used. Continuous plating was performed using a plating apparatus. A DSA electrode (titanium plate with ruthenium oxide) was used for the insoluble anode, and the amount of liquid in the anode chamber was about 0.3 L. A titanium basket containing an S-nickel chip (about 100 g) was placed on the nickel anode, and a metal tungsten tip (about 100 g) was placed on the tungsten anode.
A titanium basket containing g) was used. Using a copper plate (area 0.5 dm 2 ) for the cathode, which is a plated product, with a liquid temperature of 65
° C, pH 6.0, electricity amount 5A (plating current density 10A /
Continuous plating was performed under the plating conditions of dm 2 ). When plating, the DSA electrode was charged according to the deposition efficiency of 2.2.
A, 1.8A for nickel electrode, 1.A for tungsten electrode.
Fine adjustment was made by passing a current of 0 A in accordance with the amount of deposition. During continuous plating, nickel chips and tungsten chips were appropriately supplied to each anode basket, and pure water was supplied to the anode chamber. Even after 100 hours of electrolysis, no off-flavor or precipitation was observed at all, and the fluctuation of the pH of the plating solution was 0.3 or less. The obtained plating film was stable with a W content of about 35 to 40% and a plating current efficiency of about 60% as shown in FIG. The dissolution efficiency of each of the nickel and tungsten anodes was about 102%. Also, the amount of citric acid in the plating solution did not decrease even after 100 hours.

【0019】(比較例1)Ni−W合金めっき液とし
て、硫酸ニッケル0.2M、タングステン酸ナトリウム
0.2M、クエン酸アンモニウム0.4Mのめっき液
0.5Lを用いて、陽極にニッケル板、陰極に銅板と
し、液温65℃、pH6.0、通電量0.5A(めっき
電流密度10A/dm2 、陽極電流密度0.1A/dm
2 )のめっき条件で連続めっきを行った。めっき液に
は、1時間毎に、めっき皮膜析出量に応じた硫酸ニッケ
ル、タングステン酸ナトリウムを添加した。浴のpH調
整には、希硫酸ならびにアンモニア水を用いた。2時間
の電解において、めっき液は黄緑色へ変色し、さらに臭
気が発生した。電解時間15時間後では、めっき液中に
沈殿が形成され、不溶性生成物がめっき液に浮遊し、め
っき皮膜組成を維持できなくなった。得られためっき皮
膜は、図3に示すようにW含有量約32〜35%、初期
電流効率は58%であるが、15時間後には65%まで
増加した。15時間後のめっき液中のクエン酸濃度は、
約20%減少した。
(Comparative Example 1) As a Ni-W alloy plating solution, a plating solution of nickel sulfate 0.2M, sodium tungstate 0.2M and ammonium citrate 0.4M 0.5L was used. A copper plate was used as the cathode, the liquid temperature was 65 ° C., the pH was 6.0, the amount of electricity was 0.5 A (the plating current density was 10 A / dm 2 , and the anode current density was 0.1 A / dm.
Continuous plating was performed under the plating conditions of 2 ). Nickel sulfate and sodium tungstate were added to the plating solution every hour according to the amount of plating film deposited. For adjusting the pH of the bath, dilute sulfuric acid and aqueous ammonia were used. In the electrolysis for 2 hours, the plating solution turned yellow-green and further generated odor. After the electrolysis time of 15 hours, a precipitate was formed in the plating solution, the insoluble product floated in the plating solution, and the plating film composition could not be maintained. The obtained plating film had a W content of about 32 to 35% and an initial current efficiency of 58% as shown in FIG. 3, but increased to 65% after 15 hours. The citric acid concentration in the plating solution after 15 hours is
It decreased by about 20%.

【0020】(比較例2)Ni−W合金めっき液とし
て、硫酸ニッケル0.2M、タングステン酸ナトリウム
0.2M、クエン酸アンモニウム0.4M、ギ酸ナトリ
ウム0.2Mのめっき液0.5Lを用いて、陽極にニッ
ケル板、陰極に銅板とし、液温65℃、pH6.0、通
電量0.5A(めっき電流密度10A/dm2 、陽極電
流密度0.1A/dm2 )のめっき条件で連続めっきを
行った。なお、めっき液には、1時間毎に、めっき皮膜
析出量に応じたギ酸ニッケル、タングステン酸ナトリウ
ムならびに陽極で分解するギ酸計算量に応じたギ酸を添
加した。浴のpH調整には、希硫酸ならびにアンモニア
水を用いた。電解時間7時間で臭気発生がみられた。得
られためっき皮膜は、図4に示すようにW含有量約35
〜40%、めっき電流効率約60%で安定したが、40
時間後には、めっき液中のクエン酸量は約15%減少し
ていた。
(Comparative Example 2) As a Ni-W alloy plating solution, a plating solution 0.5L of nickel sulfate 0.2M, sodium tungstate 0.2M, ammonium citrate 0.4M and sodium formate 0.2M was used. A nickel plate for the anode, a copper plate for the cathode, continuous plating under the plating conditions of a liquid temperature of 65 ° C., a pH of 6.0, a current of 0.5 A (plating current density of 10 A / dm 2 , anode current density of 0.1 A / dm 2 ). Was done. To the plating solution, nickel formate and sodium tungstate corresponding to the amount of plating film deposited and formic acid corresponding to the calculated amount of formic acid decomposed at the anode were added every hour. For adjusting the pH of the bath, dilute sulfuric acid and aqueous ammonia were used. Odor generation was observed after 7 hours of electrolysis. The obtained plating film had a W content of about 35 as shown in FIG.
~ 40%, plating current efficiency about 60%, but stable
After time, the amount of citric acid in the plating solution had decreased by about 15%.

【0021】[0021]

【発明の効果】以上説明したように本発明によれば、カ
チオン交換膜によって陽極室とめっき室間を仕切るめっ
き装置を用いることにより、クエン酸などの有機錯化剤
を分解させることなく、Ni−W合金めっきが可能とな
る。また、連続めっきにおいては、本装置を用いて不溶
性陽極、ニッケル、タングステンの各陽極に流れる電流
を制御することによって、めっき組成ならびに電流効率
を安定させることができ、廃浴を発生させることなく連
続めっきできる。
As described above, according to the present invention, the use of a plating apparatus that separates the anode chamber and the plating chamber by a cation exchange membrane allows the organic complexing agent such as citric acid to be decomposed without decomposing the Ni complex. -W alloy plating becomes possible. In continuous plating, the plating composition and current efficiency can be stabilized by controlling the current flowing through the insoluble anode, nickel, and tungsten anodes using this apparatus, and the continuous plating can be performed without generating a waste bath. Can be plated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明によるカチオン交換膜を用いためっき装
置の概略構成図である。
FIG. 1 is a schematic configuration diagram of a plating apparatus using a cation exchange membrane according to the present invention.

【図2】本発明によるカチオン交換膜を用いためっき装
置で連続めっきした場合におけるめっきの電流効率、タ
ングステン含有量ならびにめっき液中のクエン酸濃度の
経時変化を示す図である。
FIG. 2 is a graph showing a change over time in plating current efficiency, tungsten content, and citric acid concentration in a plating solution when continuous plating is performed by a plating apparatus using a cation exchange membrane according to the present invention.

【図3】本発明に対する比較例1として、通常のめっき
装置を用いた連続めっきの電流効率、タングステン含有
量ならびにめっき液中のクエン酸濃度の経時変化を示す
図である。
FIG. 3 is a diagram showing, as Comparative Example 1 for the present invention, changes over time in current efficiency, tungsten content, and citric acid concentration in a plating solution in continuous plating using a normal plating apparatus.

【図4】本発明に対する比較例2として、犠牲陽極分解
剤を用いた連続めっきの電流効率、タングステン含有量
ならびにめっき液中のクエン酸濃度の経時変化を示す図
である。
FIG. 4 is a diagram showing, as Comparative Example 2 for the present invention, changes over time in the current efficiency, the tungsten content, and the concentration of citric acid in the plating solution in continuous plating using a sacrificial anodic decomposition agent.

【符号の説明】[Explanation of symbols]

1 めっき室 2 陽極室 3 孔 4 カチオン交換膜 5 不溶性陽極 6 ニッケル陽極 7 タングステン陽極 8 めっき品 9〜11 電流計 12〜14 直流電源 DESCRIPTION OF SYMBOLS 1 Plating chamber 2 Anode chamber 3 Hole 4 Cation exchange membrane 5 Insoluble anode 6 Nickel anode 7 Tungsten anode 8 Plating product 9-11 Ammeter 12-14 DC power supply

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成12年7月7日(2000.7.7)[Submission date] July 7, 2000 (200.7.7)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】発明の名称[Correction target item name] Name of invention

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【発明の名称】 Ni−W合金の連続めっき方法 Patent application title: Continuous plating method of Ni-W alloy

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Correction target item name] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【特許請求の範囲】[Claims]

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0009[Correction target item name] 0009

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0009】本発明は、タングステン合金の電気めっき
における上述の欠点を克服することを目的とするもので
あり、めっき液の有効成分である有機錯化剤の酸化分解
を防止できまた、連続めっきする場合の金属イオンを
可溶性陽極を用いて補給し、補給液の成分である硫酸イ
オン、ナトリウムイオン、アンモニウムイオン等を蓄積
させないようにして廃浴がでない連続めっき方法を提供
することを課題とする。
[0009] The present invention has an object to overcome the aforementioned drawbacks in the electroplating of a tungsten alloy, it can prevent oxidation degradation of the organic complexing agent which is an active ingredient of plating solution, also continuous plating It is an object of the present invention to provide a continuous plating method that does not use a waste bath by replenishing metal ions in the case of using a soluble anode, so as not to accumulate sulfate ion, sodium ion, ammonium ion and the like which are components of the replenishing solution. .

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0016[Correction target item name] 0016

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0016】なお、めっき槽からポンプ等で別槽にめっ
き液を汲み出し、そこで金属ニッケル陽極ならびに金属
タングステン陽極を電解して金属イオン成分を補給して
元のめっき槽に戻すような場合にも前記のめっき装置を
用いることができる。
[0016] Incidentally, pumping out a plating solution in a separate vessel by a pump or the like from the plating bath, where the even if the metallic nickel anode and metal tungsten anode electrolyte to replenish the metal ion component, such as back to the original plating tank Can be used.

【手続補正5】[Procedure amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0021[Correction target item name] 0021

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0021】[0021]

【発明の効果】以上説明したように本発明によれば、カ
チオン交換膜によって陽極室とめっき室間を仕切ること
により、クエン酸などの有機錯化剤を分解させることな
く、Ni−W合金めっきが可能となり、また、不溶性陽
極、ニッケル、タングステンの各陽極に流れる電流を制
御することによって、めっき組成ならびに電流効率を安
定させることができ、廃浴を発生させることなく連続め
っきできる。
According to the present invention described above, according to the present invention, by <br/> be partitioned between the anode chamber and plating chamber by a cation exchange membrane, without decomposing organic complexing agent such as citric acid, Ni can -W alloy plating and Do Ri, also, an insoluble anode, nickel, by controlling the current flowing in the anodes of tungsten, a plating composition and current efficiency can be stabilized, continuously without generating waste bath Can be plated.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 森河 務 大阪府和泉市あゆみ野2丁目7番1号 大 阪府立産業技術総合研究所内 (72)発明者 横井 昌幸 大阪府和泉市あゆみ野2丁目7番1号 大 阪府立産業技術総合研究所内 (72)発明者 中出 卓男 大阪府和泉市あゆみ野2丁目7番1号 大 阪府立産業技術総合研究所内 (72)発明者 佐藤 幸弘 大阪府和泉市あゆみ野2丁目7番1号 大 阪府立産業技術総合研究所内 (72)発明者 石田 幸平 大阪府大阪市西淀川区姫島5丁目12番20号 株式会社野村鍍金内 (72)発明者 湯屋 進 大阪府豊中市長興寺北1丁目5番37号 有 限会社ウイング内 Fターム(参考) 4K023 AB20 BA06 BA16 CB03 DA03 DA07 DA08  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Tsutomu Morikawa 2-7-1, Ayumino, Izumi City, Osaka Prefecture Inside the Osaka Prefectural Institute of Industrial Science (72) Masayuki Yokoi 2-7-1, Ayumino, Izumi City, Osaka Prefecture No. Within the Osaka Prefectural Institute of Industrial Science and Technology (72) Inventor Takuo Nakade 2-7-1, Ayumino, Izumi City, Osaka Prefecture Inside the Osaka Prefectural Institute of Industrial Science and Technology (72) Yukihiro Sato 2-chome Ayumino, Izumi City, Osaka Prefecture No.7-1 Inside Osaka Prefectural Industrial Technology Research Institute (72) Inventor Kohei Ishida 5-12-20 Himejima, Nishiyodogawa-ku, Osaka-shi, Osaka Nomura-gilding Co., Ltd. (72) Inventor Susumu Yuya Chokoji, Toyonaka-shi, Osaka Kita 1-chome 5-37 Limited company wing F term (reference) 4K023 AB20 BA06 BA16 CB03 DA03 DA07 DA08

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 Ni−W合金の電気めっきにおいて、
不溶性陽極を収納した陽極室とめっき室間をカチオン交
換膜を用いて分離したことを特徴とするカチオン交換膜
を用いたNi−W合金の電気めっき装置。
In an electroplating of a Ni—W alloy,
An electroplating apparatus for a Ni-W alloy using a cation exchange membrane, wherein an anode chamber containing an insoluble anode and a plating chamber are separated using a cation exchange membrane.
【請求項2】 有機錯化剤をアニオン状態で含むNi
−W合金の電気めっき液にタングステン成分とニッケル
成分をそれぞれ補給するタングステン及びニッケルの各
可溶性陽極と、前記めっき液とカチオン交換膜を用いて
分離された電解液中の不溶性陽極とに並列的に通電する
ことを特徴とするNi−W合金の連続めっき方法。
2. Ni containing an organic complexing agent in an anionic state.
A tungsten and nickel soluble anode for replenishing a tungsten component and a nickel component respectively to an electroplating solution of a W alloy, and an insoluble anode in an electrolytic solution separated by using the plating solution and a cation exchange membrane in parallel. A method for continuous plating of a Ni-W alloy, characterized by energizing.
【請求項3】 請求項2において、めっき皮膜のタン
グステン析出量に応じた電流をタングステン陽極に、ニ
ッケル析出量に応じた電流をニッケル陽極に、水素発生
量に応じた電流を不溶性陽極に流すことを特徴とするN
i−W合金の連続めっき方法。
3. The method according to claim 2, wherein a current corresponding to the amount of tungsten deposited on the plating film is supplied to the tungsten anode, a current corresponding to the amount of nickel deposited is supplied to the nickel anode, and a current corresponding to the amount of generated hydrogen is supplied to the insoluble anode. N characterized by
A continuous plating method for an i-W alloy.
JP11341785A 1999-12-01 1999-12-01 Continuous plating method of Ni-W alloy Expired - Lifetime JP3104704B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006213956A (en) * 2005-02-02 2006-08-17 Nomura Plating Co Ltd Fe-W ALLOY ELECTROPLATING DEVICE USING CATION EXCHANGE MEMBRANE, CONTINUOUS PLATING METHOD USING THE DEVICE AND COATING FILM
JP2009173992A (en) * 2008-01-23 2009-08-06 Asahi Plating Co Ltd Method of manufacturing plated material and electroplating method
JP2011184785A (en) * 2010-03-11 2011-09-22 Okuno Chemical Industries Co Ltd Tungsten replenishing liquid for nickel-tungsten electroplating bath

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003252677A1 (en) * 2002-07-25 2004-02-16 Shinryo Electronics Co., Ltd. Tin-silver-copper plating solution, plating film containing the same, and method for forming the plating film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006213956A (en) * 2005-02-02 2006-08-17 Nomura Plating Co Ltd Fe-W ALLOY ELECTROPLATING DEVICE USING CATION EXCHANGE MEMBRANE, CONTINUOUS PLATING METHOD USING THE DEVICE AND COATING FILM
JP2009173992A (en) * 2008-01-23 2009-08-06 Asahi Plating Co Ltd Method of manufacturing plated material and electroplating method
JP2011184785A (en) * 2010-03-11 2011-09-22 Okuno Chemical Industries Co Ltd Tungsten replenishing liquid for nickel-tungsten electroplating bath

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