JP2001158021A - Mold or mold master for microlens array and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mold or a mold master for a micro-structural body with small in-surface distribution of a size thereof and its manufacturing method. SOLUTION: A method for manufacturing a mold or a mold master for a micro-structural body includes (1) a process of preparing a substrate 1 having a conductive portion 2, (2) a process of forming a first masking layer 3 on the conductive portion 2, (3) a process of making the conductive portion 2 exposed by forming a plurality of openings 4 in the first masking layer 3, (4) a process of forming a first plated layer 6 on the openings 4 and the first masking layer 3 by means of an electroplating method using the conductive portion 2 as a cathode, (5) a process of forming a second masking layer 7 on the openings 4 and a selected area of the first plated layer 6 and (6) a process of removing the area of the first plated layer 6 having no second masking layer 7 by means of an electrolytic etching method in which voltage is impressed by use of the conductive portion 2 as an anode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a mold or a mold master for a microlens array for manufacturing a microlens array used in the field of optoelectronics and the like.

[0002]

2. Description of the Related Art A microlens array has a plurality of microscopic substantially hemispherical lenses each having a diameter of several μm to several hundred μm, and is used for various purposes such as a liquid crystal display device, a light receiving device, and a connection between fibers in an optical communication system. It is being used for applications.

On the other hand, the development of surface emitting lasers and the like, in which the interval between light emitting elements can be narrowed and which can be easily arrayed, has been advanced, and the demand for microlenses having a large numerical aperture (NA) that can narrow the interval between lens arrays has increased.

[0004] Similarly, with the development of semiconductor process technology, the distance between the elements has been narrowed, and the size of the light receiving elements has been increasingly reduced as seen in CCDs and the like. As a result, here too, a microlens array with a small lens spacing and a large numerical aperture is required. In such a microlens, a microlens with a high light-collecting rate and high utilization efficiency of light incident on the lens surface is desired.

[0005] Further, there is a similar demand in optical parallel processing / calculation, optical interconnection and the like, which are expected fields of optical information processing in the future.

Further, electroluminescence (EL)
Research and development of self-luminous display devices such as the above have also been actively conducted, and high-definition and high-luminance displays have been proposed. In such a display, there is a demand for a low-cost, large-area microlens array in addition to a small and large numerical aperture microlens array.

[0007] Under the circumstances described above, the ion exchange method (M. Oikawa, et al., Jpn.
J. Appl. Phys. 20 (4) L51
-54, 1981), a method of manufacturing a microlens array in which a plurality of portions on a substrate made of multi-component glass are made to have a high refractive index to form a plurality of lenses. However, in this method, the lens diameter cannot be made larger than the distance between the lenses, and it is difficult to design a lens having a large numerical aperture. Further, in order to produce a large-area microlens array, a large-scale production device such as an ion diffusion device is required, and there is a problem that production is not easy. In addition, compared with molding using a mold, it is necessary to perform an ion exchange step for each glass, and if the manufacturing condition management of the manufacturing apparatus is not sufficiently performed, the quality of the lens, for example, variation in the focal length is large between lots. There was a problem of becoming. Also, this method is more expensive than the method using a mold.

Furthermore, in the ion exchange method, alkali ions for ion exchange are required in a glass substrate, and the substrate material is limited to alkali glass and is compatible with a semiconductor-based device on the premise that alkali ions are free. Is bad. Furthermore, since the thermal expansion coefficient of the glass substrate itself is significantly different from the thermal expansion coefficients of the light receiving device and the light emitting device substrate,
As the integration density of the devices increases, misalignment occurs due to mismatch of thermal expansion coefficients. Also, it has been known that the ion exchange method of glass surface originally leaves a compressive strain on the surface, which causes the glass to warp, and as the size of the microlens array becomes larger, bonding and bonding with a light receiving device or a light emitting device. Has become difficult.

As another method, a registry flow method (D. Daly, et al., Proc. Mi.)
crolens Array Tedgingto
n. , P23-34, 1991). In this method, a resin formed on a substrate is patterned into a cylindrical shape by using a photolithography process, and is heated and reflowed to produce a microlens array. By this method, lenses of various shapes can be manufactured at low cost. In addition, there is no problem such as a coefficient of thermal expansion or warpage as compared with the ion exchange method. However, in this method, the shape of the microlens strongly depends on the thickness of the resin, the wettability between the substrate and the resin, and the heating temperature. Likely to happen. Further, when adjacent lenses come into contact with each other by reflow, the desired lens shape cannot be maintained due to surface tension. That is, it is difficult to bring adjacent lenses into contact with each other to reduce the unused area between the lenses and increase the light collection rate.

In order to obtain a lens diameter of about several tens to several hundreds of micrometers, a resin having a thickness sufficient to make it spherical by reflow must be applied. However, desired optical characteristics (refractive index, high light transmittance) are required. ) Is difficult to apply uniformly and thickly. That is, it is difficult to manufacture a microlens having a large curvature and a large lens diameter.

As another method, there is a method in which an original plate of a microlens array is produced, a lens material is applied to the original plate, and the applied lens material is peeled off. In preparing a mold serving as an original, a method of drawing using an electron beam (JP-A-1-231601) and a method of etching a negative portion of a metal plate (JP-A-5-303909)
Publication). According to these methods, the microlens can be duplicated by molding, the variation hardly occurs for each lot, and the microlens can be manufactured at low cost. Further, as compared with the ion exchange method, problems such as occurrence of an alignment error and warpage due to a difference in thermal expansion coefficient can be avoided. However, in the method using an electron beam, an electron beam lithography apparatus is expensive and requires a large amount of capital investment. Since the lithography area is limited, it is difficult to produce a large-sized master having a size of 10 cm square or more. Problem.

Further, in the etching method, since isotropic etching mainly using a chemical reaction is used, there is a problem that even if the composition or the crystal structure of the metal plate is slightly changed, the metal plate cannot be etched into a desired shape. In addition, in the etching method, the etching is continued unless the water is immediately washed when a desired shape is obtained. When a minute microlens is formed, the shape may deviate from the desired shape due to etching that progresses from the time when the desired shape is obtained to the time of washing with water.

As a method of solving the above problems, a method of fabricating a hemispherical structure array by electroplating, fabricating a mold for a microlens using this as an original plate, and fabricating a microlens array from the mold. (JP-B-64-10169). According to this method, it is easy to increase the size, the manufacturing process is easy, the controllability is high, and the microlens mold can be manufactured at low cost.

[0014]

However, in this method, distribution of current density occurs due to the shape of the opening 106 during plating, and as shown in FIG. As a result, the electric field is concentrated, the plating growth is promoted, and the size of the hemispherical structure 108 has an in-plane distribution.

The present invention has been made in view of the above-mentioned problems of the prior art. The objectives are (1) easy to enlarge, (2) easy manufacturing process, high controllability, (3) relatively inexpensive, (4) small in-plane distribution,
(5) An object of the present invention is to provide a mold or a mold master for a microlens array that can have a plurality of or a plurality of types of lens patterns on the same substrate surface, and a method of manufacturing the same.

[0016]

Means for Solving the Problems and Action The method for producing a hemispherical microstructure array, a mold for a microlens array, or a mold master according to the present invention for achieving the above-mentioned object is as follows. A step of preparing a substrate having a conductive portion (a conductive substrate, a substrate having an electrode layer, etc.)
(2) a step of forming an insulating first mask layer on the conductive portion of the substrate; and (3) forming a plurality of appropriately shaped openings in the first mask layer to expose the conductive portion. Process,
(4) a step of forming a first plating layer on the opening and the first mask layer through the opening by electroplating using the conductive portion as a cathode; (5) the opening and the first plating Forming an insulating second mask layer on a selected region of the layer; (6) applying a voltage using the conductive portion as an anode to form a second mask layer in the region where the second mask layer is not formed; The method is characterized by including at least the steps (1) to (6) of the step of removing one plating layer by electrolytic etching.

Based on the above basic configuration, the following more specific embodiments are possible. After the step (6),
(7) a step of removing the second mask layer, (8) a step of completely removing the first mask layer, (9) a second plating layer or electrodeposition from the first plating layer to the conductive portion. The method may further include a step of forming a layer. This corresponds to a first embodiment described later. Since the second layer only needs to be able to fix the first electroplating layer and be formed smoothly, it can be formed by electrodeposition, electroless plating, etc. in addition to electroplating (DC plating, pulse plating, etc.). Also, dispersion plating by adding dispersed particles of Al ₂ O ₃ , TiO ₂ , PTFE or the like to the electroplating bath can be used. The dispersed particles make it possible to improve the mechanical strength and corrosion resistance of the convex structure. In the electrodeposition, an electrodepositable organic compound (eg, an anionic electrodeposited acrylic carboxylic acid resin or a cationic electrodeposited epoxy resin) can be electrodeposited on the first plating layer by using an electric current. This is the same in the later embodiments.

After the step (6), (7) a step of removing the first mask layer which is not covered with the second mask layer while leaving the second mask layer, (8) a second mask An embodiment further including a step of removing the layer is also possible. This corresponds to the embodiment of FIG. 9 described later. In this case, after the step (8), the method may further include a step (9) of forming a second plating layer or an electrodeposition layer from the first plating layer to the conductive portion. In this embodiment, if the first mask layer is formed of a material (PSG or the like) having sufficient adhesion to the conductive portion of the substrate, the mold or the mold is formed even when the second plating layer or the electrodeposition layer is not formed. Can be used as a master.

Although it has already been described that the second plating layer can be formed by electroplating or electroless plating for increasing the gloss, in this case, the second plating layer may be formed of a nickel plating layer or the second plating layer. The nickel plating layer contains phosphorus in order to enhance corrosion resistance.

The openings may be arranged in a periodic repetitive arrangement pattern (such as a two-dimensional matrix arrangement pattern) in the plane of the substrate. This periodic repetitive array pattern does not mean that there is a unit array pattern in it, and it is repeated.It is a uniform array as a whole, and no unit array pattern is found anywhere. (Conversely, if you try to take it, the unit pattern that can be taken can be anywhere.) This is because if there is a unit array pattern, a current density distribution occurs in the unit array pattern, and an electric field concentrates around the unit array pattern, causing a problem.

In the step (4), the first plating layers may be separately formed. This ensures that the first mask layer can be completely removed when it is entirely removed.

In the step (5), the second mask layer can be formed in a plurality of regions. In this case, the step (5)
In the above, the plurality of regions of the second mask layer include a plurality of regions covering the first plating layers having the same arrangement,
The plurality of regions of the second mask layer may include a plurality of regions covering the first plating layers having different arrangements.

In the step (5), the width of the region of the first plating layer that is not covered by the second mask layer is preferably at least 2 mm around the region of the first plating layer that is covered by the mask layer. . This facilitates the step (5) such that the in-plane distribution of the diameter of the first plating layer in the area covered with the second mask layer is within 5%. This realizes sufficient performance as a microlens array.

[0024] A mode may be adopted in which a part of the region of the first plating layer covered with the second mask layer is for forming the first plating layer serving as an alignment marker. This is used as an alignment mark in a later step.

The electrolytic etching can be performed in a plating bath as used in step (4).

The material of the conductive portion serving as the electrode and the material of the first plating layer formed in step (4) are as follows:
It may be a material that does not form an alloy layer. By doing so, when the unnecessary portion of the first plating layer is removed, the first plating layer is completely removed, so that the protrusion does not remain, and unnecessary portions are not formed when the second plating layer or the electrodeposition layer is formed. No projections (which can be mistaken for alignment markers) are formed. The material of the conductive portion serving as the electrode and the material of the first plating layer formed in step (4) are such that the conductive portion material does not diffuse toward the first plating layer to form an alloy layer. The same effect can be obtained even with a suitable material. For example, if the first plating layer is Ni and the conductive portion is Au, Au diffuses toward the first plating layer to form an alloy layer, and the alloy is formed when the first plating layer is removed. Layer protrusions will remain.

However, the material of the conductive portion serving as the electrode and the material of the first plating layer formed in the step (4) are diffused by the first plating layer material to the conductive portion side to form an alloy. It is good if the material is such as to form a layer. Because, in this case, since the first plating layer diffuses to the conductive portion side to form an alloy layer, even if the alloy layer remains when the first plating layer is removed, it does not become a projection. It is. For example, if the first plating layer is Au and the conductive portion is Ni, Au diffuses to the conductive portion side to form an alloy layer, but this is not a problem.

Further, the hemispherical microstructure array, microlens array mold or mold master of the present invention for attaining the above object is formed on a substrate having a conductive portion at least in part. A first electroplating layer formed by plating and growing the conductive portion as an electrode layer from the opening of the mask layer having a plurality of openings of an appropriate shape, and further covering the first electroplating layer. A first electroplating layer and a second electroplating layer formed on the conductive portion.
Characterized by a plating layer or an electrodeposition layer.

In this configuration, for the reasons described above,
The mask layer is entirely removed, and the second plating layer or the electrodeposition layer is formed so as to cover only the first electroplating layer, or the mask layer at the first electroplating layer is formed. Is left, and the second plating layer or electrodeposition layer is
The material of the conductive portion serving as the electrode and the material of the first electroplating layer are formed so as to cover the electroplating layer and the mask layer, and the material of the first electroplating layer does not form an alloy layer or serves as the electrode. The material of the conductive portion is platinum (P
t), the first electroplating layer and the second plating layer are made of a nickel plating layer, the second plating layer is formed by electroless plating, and the second plating layer is formed by electroless plating. It is made of a nickel plating layer, or phosphorus is contained in the second nickel plating layer. Further, an alignment marker made of the first electroplated layer may be formed at an arbitrary position around the first electroplated layer covered with the second plated layer or the electrodeposited layer.

The above is the basic and more specific components of the present invention, and the details and operation of the components will be described below along typical examples. First, the principle of forming a first plating layer structure such as a hemisphere will be described.

When electroplating is performed on a minute opening of an insulating mask layer formed on a conductive substrate or a substrate having an electrode layer, a plating layer is first deposited in the opening, and further electroplating is performed. A first plating layer begins to grow on the openings and the mask layer. When the size of the opening is sufficiently smaller than that of the anode for electroplating, the first plating layer grows isotropically with respect to the center or center line of the opening, and the first plating layer having a hemispherical shape or the like opens. And on the mask layer. By making the shape of the opening circular, the first plating layer can grow isotropically hemispherically on the mask layer.

As compared with the method of forming an original plate by etching, when the current flowing between the anode and the cathode is stopped when the desired shape is obtained, the deposition of plating can be stopped. Unexpected shape errors such as etching can be avoided, and the controllability of fabrication is good.

Next, a method for manufacturing a mold for a microlens array or a mold master will be described. First, a first mask layer is formed over a conductive substrate or a substrate having an electrode layer. As a material for the plating substrate, any material of a metal, a semiconductor, and an insulator may be used, and a metal plate, a glass substrate, a silicon wafer, or the like having good flatness can be used. If a metal material is used as the plating substrate, there is no need to form an electrode layer. In the case of using a semiconductor, it is not always necessary to form an electrode layer as long as the electrode has conductivity enough to allow electroplating. The electrode layer is selected from materials that are not corroded by the plating solution to be used because they are exposed to the plating solution. However, a material that does not form the first plating layer and the alloy layer is preferable because the first plating layer formed on the electrode layer is removed by electrolytic etching in a later step.

The electrode layer is preferably made of a material which is not electrolytically etched in the plating solution. The first mask layer may be any material having an insulating property, and either an inorganic insulator or an organic insulator can be used. As a method for forming the electrode layer and the first mask layer, a thin film forming method such as a vacuum evaporation method, a spin coating method, a dipping method, and a chemical deposition method (CVD) is used.

Next, an opening array is formed in the first mask layer. The shape of the opening is preferably circular. In forming the opening, the opening is formed by a semiconductor photolithography process capable of forming a minute opening and etching. When a photoresist is used as the first mask layer, an etching step can be omitted.

Next, the substrate for plating is immersed in a plating solution containing metal ions as a work, and an external power supply is connected between the substrate and the anode plate to supply a current to form a first plating layer in the opening. Plating is formed in the opening, and by continuing plating, the first plating layer also spreads on the first mask layer to form a structure such as a hemisphere. The diameter of the microlens formed by the mold or mold master for the microlens array to be manufactured is in the range of several μm to several hundred μm,
For this reason, the size of the opening needs to be smaller than the diameter of the microlens formed by the desired microlens array mold or mold master. In order for plating growth to be isotropic, the shape of the hemispherical structure approaches a true sphere as the size of the opening is smaller than the diameter of the hemispherical structure. The hemispherical structure is formed by depositing metal ions in a plating bath by an electrochemical reaction.

In the electroplating, the thickness of the first plating layer can be easily controlled by controlling the plating time and the plating temperature. The main plating metals are Ni, Au, Pt, Cr, Cu, Ag, Zn and the like for single metals, and Cu-Zn, Sn-Co, Ni-Fe, Zn- for alloys.
Ni or the like can be used. Any other material that can be electroplated can be used, but a material that does not form the electrode layer and the alloy layer is preferable.

The first plating layer formed here grows larger at the periphery of the array than at the center. This is because the current distribution is not uniform and the current concentrates at the ends of the electrodes. However, in the method of the present invention, an array of the first plating layer having a substantially uniform size is obtained by selectively removing the first plating layer that has grown larger than the center portion of the array peripheral portion by electrolytic etching. Can be.

That is, according to the method, a second mask layer is formed on a region where a first plating layer having a substantially uniform size is formed. The second mask layer may be any material having an insulating property, and any of an inorganic insulator and an organic insulator can be used. As a method for forming the insulating layer of the second mask layer, a thin film formation method such as a vacuum evaporation method, a spin coating method, and a dipping method is used. In forming an insulating layer only in a selective region, the insulating layer is formed by a semiconductor photolithography process and etching. When a photoresist is used as the second mask layer, an etching step can be omitted.

Next, using this substrate as a work,
Then, the electrode is immersed in a plating solution having a plating layer formed thereon, and a current is supplied from an external power supply by connecting a cathode and an anode in a manner opposite to the case where the first plating layer is formed. As a result, the first plating layer grown larger than the central portion is selectively removed by electrolytic etching. Here, if the electrode layer is a material that is not electrolyzed by the plating solution and does not form an alloy layer with the first plating layer,
After the electrolytic etching, a flat surface of the electrode layer is obtained.

The first plating layer covered with the remaining second mask layer has a substantially uniform size and is a hemispherical structure array having a small in-plane distribution of diameters. The metal of the first plating layer removed here can be recovered in the plating solution or on a metal plate of the counter electrode, and even an expensive metal material can be used without waste.

Further, if a second mask layer is formed on the first plating layer existing at an arbitrary position, an alignment marker composed of the first plating layer is formed without being electrolytically etched in a later step. It becomes possible. On this occasion,
If a part of the plating layer to be removed is exposed in the plating solution, it can be removed by electrolytic etching.

Further, in this method, by providing a plurality of second mask layers in the substrate, the in-plane distribution of the size of the diameter of a plurality or a plurality of types of first plating layers from one substrate is small. It is also possible to obtain a mold or a mold master for a microlens array. This is because, after the formation of the first plating layer, the second plating is selectively performed in a region where the in-plane distribution of the diameter of the first plating layer is small except for the peripheral portion of the array pattern.
This is because the mask layer can be formed.

Next, the first and second mask layers are removed,
A second plating layer is formed from the first plating layer to the electrode layer. Thereby, the first plating layer is firmly fixed on the electrode layer, and it is possible to prevent the first plating layer from dropping off in a subsequent step, and to improve the durability of the microlens array mold or mold master. Become.

The microlens array mold is obtained by forming a mold material on the microlens array mold master (original plate) and then peeling the mold. Since the microlens array mold can be formed directly from the original plate formed by electroplating, it can be manufactured at low cost without requiring expensive equipment. As a method of peeling, the original plate and the substrate may be mechanically peeled. However, when the sheet is enlarged, the sheet may be deformed at the time of peeling.
Alternatively, a method of sequentially etching and removing the second plating layer from the back surface may be adopted.

When a mold is formed after providing a sacrificial layer on the substrate and the second plating layer, the mold and the substrate can be separated by removing the sacrificial layer. In this case, a material for the sacrificial layer is selected so that the mold is not corroded by an etchant for etching the sacrificial layer. When the first and second plating layers and the substrate are not corroded by the etchant that etches the sacrificial layer, the substrate on which the first and second plating layers are formed can be used a plurality of times as an original, and the mold can be used. Can be easily manufactured by the same method in the case where it cannot be used due to scratches, dirt, etc. due to multiple uses.

As the material for the microlens mold, any material such as resin, metal, and insulator can be used as long as it can be formed on the substrate on which the first and second plating layers are formed and can be peeled off. be able to.

As a simple method of forming a mold, a solution in which a resin, a metal, or a glass is melted or dissolved is applied to a substrate on which the first and second plating layers are formed and cured, and then the above-described peeling is performed. It is formed by peeling by a method. in this case,
As the mold material, a material that does not alloy with the substrate or the second plating layer is selected.

Another method is to use the substrate as a cathode and
A metal mold is formed by electroplating on the plating layer and the electrode layer of the substrate. If a sacrifice layer is used, a mold electrode layer is formed on the sacrifice layer, and electroplating is performed using the mold electrode layer as a cathode.

Further, a microlens array can be formed by forming a microlens material on the microlens array mold and peeling it off. This makes it possible to easily manufacture microlenses having the same shape at low cost. As a material of the microlens, a material that is easily peelable from a microlens mold is used. When a resin is used as the microlens material, a light-transmissive thermosetting resin, an ultraviolet-curing resin, an electron beam-curing resin, or the like is applied on a microlens array mold, and then cured by ultraviolet light irradiation, electron beam irradiation, or the like. Let it. During curing, no bubbles are formed. When applying a resin, degassing may be performed.
After curing, the resin is released from the mold to form a microlens array. As the resin that forms the microlens array, a material that transmits light in a wavelength region of light used by a light receiving device using a microlens or a light emitting device is used.

When a microlens is manufactured by the above method, alkali glass is not essential, and the limitations on the materials of the microlens and the supporting substrate can be reduced as compared with the ion exchange method. If molten glass is used instead of resin, a glass microlens array can be produced.

Of course, the mold of the present invention is not limited to a microlens array as long as it can be applied, and can be used for producing any structure.

[0053]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) The first embodiment is a first embodiment of a method for manufacturing a mold or a mold master for a microlens array and a microlens array according to the present invention. FIG.
The manufacturing method will be described with reference to FIG.

The process will be described with reference to FIGS. A 2-inch φ silicon wafer having a 1 μm thick silicon dioxide film formed on both surfaces by thermal oxidation using an oxidizing gas is used as the substrate 1 shown in FIG. This wafer 1
Ti and P are deposited by vacuum sputtering, one of the thin film forming methods.
t is continuously deposited at 50 ° and 500 °, respectively, to form the electrode layer 2. A positive photoresist (Az150)
0: manufactured by Hoechst) and the first mask layer 3
To form

Next, a photoresist is formed on the first mask layer 3, the photoresist is exposed and developed by photolithography, and the photoresist is used as a mask to be etched to partially expose the electrode layer 2, An opening 4 is formed.
The opening 4 is circular and has a diameter of 5 μm,
The distance between adjacent openings 4 is 25 μm. In this embodiment, 860 × 860 openings 4 are provided in total (see FIG. 1A).

Using the substrate 1 as a work, the electrode layer 2 as a cathode, and a Ni plating bath comprising nickel sulfate, nickel chloride, boric acid and a brightener, a bath temperature of 60
Ni plating is performed at a temperature of 40 ° C. and a cathode current density of 40 A / dm ² . A first plating layer 6 made of Ni is first deposited and grown from the opening 4, the first plating layer 6 also spreads on the first mask layer 3, and a hemispherical structure having a radius of about 10 μm at the center of the array. The first plating layer 6 was grown until the body 8 was formed (see FIG. 1B).

FIG. 2 shows a hemispherical structure 8 shown in FIG.
FIG. 2A is a cross-sectional view of FIG.
(B) is a top view. When the radius of the hemispherical structure 8 was about 10 μm at the center of the array, a hemispherical structure 8 having a maximum radius of about 15 μm was formed at the periphery 5 of the array.

Next, a positive photoresist (AzP46)
20: manufactured by Hoechst Co., Ltd.), exposed, and developed, and a second mask layer 7 is selectively provided in 700 × 700 regions excluding the 2 mm width of the array peripheral portion 5. As a result, the first plating layer 6 in the array peripheral portion 5 was exposed (FIG. 1C). FIG. 3A is a sectional view, and FIG. 3B is a top view. Here, the in-plane distribution of the diameter of the first plating layer 6 in the area covered by the second mask layer 7 was within 5%.

Using this substrate 1 as a work and using it as an anode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid and a brightener was used at a bath temperature of 60 ° C. and an anode current density of 8 A / dm ² . Exposed first plating layer 6
(FIG. 1D). Here, since Pt is used for the electrode layer 2, the electrode layer 2 is not corroded. Then, the electrolytic etching is performed using the first Ni made of Ni existing in a region not covered with the second mask layer 7.
It stopped when the plating layer 6 was consumed.

Next, by removing the first and second mask layers 3 and 7 with acetone and dimethylformamide,
A hemispherical structure array having 700 × 700 hemispherical structures 8 can be formed (see FIG. 1E).
4A and 4B are diagrams showing the in-plane distribution of the hemispherical structure 8 in FIG. 1E, wherein FIG. 4A is a cross-sectional view and FIG. 4B is a top view. The in-plane distribution of the radius of the hemispherical structure 8 was within 5%.

Next, using the electrode layer 2 as a cathode, a bath temperature of 60 ° C. and a cathode current density of 8 A / dm ² using a Ni plating bath comprising nickel sulfate, nickel chloride, boric acid and a brightener.
Then, Ni plating is performed to form a second plating layer 9 (FIG. 1F). As a result, a mold or a mold master for the microlens array in which the first plating layer 6 is firmly fixed on the electrode layer 2 is obtained.

As described above, according to the present embodiment, a manufacturing method capable of easily reducing the in-plane distribution of the size of a hemispherical structure in a mold or a mold master for a microlens array can be provided. .

Next, a process of manufacturing a mold using the structure formed by the above-described manufacturing method as a master will be described. Normal pressure CV
D (Chemical Vapor Depositi
on) method, PSG (Phosphosiica)
A 1 μm film is formed at 350 ° C. to form a sacrificial layer 10 (FIG. 5A). Subsequently, Ti and Au were deposited at 10 nm and 200 nm, respectively, by electron beam evaporation.
The film is continuously formed to form the mold electrode layer 11 (FIG. 5).
(B)).

Using this mold as a workpiece, the mold electrode layer 11 as a cathode, a nickel plating bath composed of nickel sulfamate, nickel bromide, boric acid and a brightener, a bath temperature of 50 ° C. and a cathode current With a density of 5 A / dm ² , Ni
Electroplating is performed to form a mold 20 (FIG. 5).
(C)).

Next, the substrate is immersed in a mixed aqueous solution of hydrofluoric acid and ammonium fluoride to remove the PSG as the sacrificial layer 10 by etching, and the substrate and the mold 20 are separated. At this time,
Ti of the mold electrode layer 11 is also removed at the same time. Thereafter, Au of the mold electrode layer 11 is removed by etching with a mixed aqueous solution of iodine and potassium iodide to form a convex microlens array mold 20 (FIG. 5D).

Using this mold 20, a microlens array is manufactured. After applying the ultraviolet curable resin 12 to the convex microlens array mold 20, a glass substrate serving as the support substrate 13 is mounted thereon (FIG. 5E). After the resin 12 was cured by ultraviolet irradiation, it was peeled off, whereby a convex microlens array 15 was produced.
(F)). In this convex microlens array, the in-plane distribution of the lens diameter was within 5%.

(Second Embodiment) A second embodiment will be described with reference to FIGS. 1 and 5 to 9. The process up to the formation of the opening 4 shown in FIG. 1A is performed in the same manner as in the first embodiment. In the second embodiment, the interval between adjacent openings 4 is 1
8 μm. Also, in this embodiment, 2000 × 2
000 openings 4 were provided (see FIG. 1A). The step of growing the first plating layer 6 until a hemispherical structure 8 having a radius of about 10 μm at the center of the array is performed in the same manner as in the first embodiment (see FIG. 1B).

FIG. 2 shows the hemispherical structure 8 shown in FIG.
FIG. 2A is a cross-sectional view of FIG.
(B) is a top view. When the radius of the hemispherical structure 8 was about 10 μm at the center of the array, a hemispherical structure 8 having a maximum radius of about 15 μm was formed at the periphery 5 of the array.

Next, a positive photoresist (AzP46)
20: manufactured by Hoechst Co.). The photoresist applied on the second mask layer 7 is exposed and developed to remove 1
The second mask layer 7 is selectively provided in 064 × 806 regions (FIG. 1C). Here, in this embodiment,
In order to form the marker 14 used for positioning such as bonding, the second mask layer 7 is formed at any two positions other than the 1064 × 806 regions (FIG. 6).

Next, using the substrate 1 as a workpiece, and using it as an anode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid and a brightener was used at a bath temperature of 60 ° C. and an anode current density of 8 A / dm ² . , Exposed first plating layer 6
(Including partially exposed) electrolytic etching is performed. Here, the electrode layer 2 is not corroded by using Pt as the electrode layer 2. Then, the electrolytic etching is stopped when the first plating layer 6 made of Ni existing in a region not completely covered by the second mask layer 7 is consumed.

Next, by removing the first and second mask layers 3 and 7 with acetone and dimethylformamide,
A hemispherical structure array having 1064 × 806 hemispherical structures 8 and markers 14 including the first plating layer 6 can be formed. FIG. 7 is a top view, and the in-plane distribution of the radius of the hemispherical structure 8 was within 5%.

Here, a nickel plating bath comprising nickel sulfate, nickel chloride, boric acid and a brightener was used as a cathode of the electrode layer 2 at a bath temperature of 60 ° C. and a cathode current density of 8 A / dm ^2.
To form a second plating layer 9. Thereby, the first plating layer 8 (including the marker 14)
Is firmly fixed on the electrode layer 2 to obtain a microlens array mold or mold master. The radius of curvature of the plating layer 8 in the used area at this time was about 25 μm, and the distribution of the radius of curvature was within 5%.

As described above, according to the present embodiment, there is provided a manufacturing method capable of easily reducing the in-plane distribution of the size of the hemispherical structure 8 in the used area in the hemispherical microstructure array with the marker 14. Was completed.

The convex microlens array mold can be formed in the same manner as in the first embodiment. In this case, a concave marker having a shape obtained by inverting the convex marker 14 is also formed in this mold. After applying the ultraviolet curable resin 12 to the mold for the convex microlens array, the glass substrate 13 serving as the support substrate 13 is placed thereon. By peeling the resin 12 after curing by ultraviolet irradiation, a convex microlens array 15 having a convex marker 14 for alignment can be produced (FIG. 8). Also in this convex microlens array 15, the in-plane distribution of the lens curvature radius is 5
%.

Subsequently, by aligning the marker 14 of the convex microlens array 15 with the marker formed on the TFT liquid crystal substrate and attaching them, the microlenses could be arranged at positions corresponding to the respective pixels. . When these were connected to a drive circuit and driven as a liquid crystal projector, the incident light was condensed by the microlenses and a bright display image could be obtained.

(Third Embodiment) A third embodiment will be described with reference to the manufacturing process diagram of FIG. The process up to the formation of the opening 4 is the same as in the first embodiment. The openings 4 are provided in an array in a region of 950 mmφ on the surface of the silicon wafer. Using the substrate 1 as a work, the radius at the center of the array is about 10 μm.
The growth of the first plating layer 6 until the hemispherical structure 8 becomes the same as in the first embodiment (see FIG. 1B).

Next, a bodi type photoresist (AzP46)
20: made by Hoechst Co.) (FIG. 1C). Expose and develop the photoresist,
A second mask layer 7 is selectively provided on a region excluding the peripheral portion 5 of the wafer. Here, the second mask layer 7 has a size of 700 ×
Four locations are provided in the same plane in 700 areas.

Subsequently, using the substrate 1 as a work and using it as an anode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid and a brightener was used.
Electrolytic etching of the exposed first plating layer 6 is performed at an anode current density of 8 A / dm2.

Next, by removing the first and second mask layers 3 and 7 with acetone and dimethylformamide,
A hemispherical structure array having four 700 × 700 hemispherical structures 8 in the same plane could be formed. At this time, the in-plane distribution of the radius of the hemispherical structure 8 in each region and between the regions was within 5%.

As described above, according to the present embodiment, in the microlens array mold or mold master having a plurality of regions having the same structure, the in-plane distribution of the size of the hemispherical structure 8 can be easily reduced. A method could be provided.

Here, a convex microlens array mold can be formed in the same manner as in the first embodiment (FIG. 5).
(See (a) to (d)). Then, after applying the ultraviolet curable resin 12 to the convex microlens array mold 20, a glass substrate serving as the support substrate 13 is placed thereon, cured by ultraviolet irradiation, peeled off, and further cut out of each region. Then, four convex microlens arrays 15 could be manufactured from one mold 20 (FIG. 5E).
(F)). In each convex micro lens array 15, the in-plane distribution of the lens diameter was within 5%.

(Fourth Embodiment) A fourth embodiment will be described with reference to the manufacturing process diagram of FIG. The process up to the formation of the opening 4 is the same as in the first embodiment. The openings are provided in an array in an area of 950 mmφ on the surface of the silicon wafer. Using the substrate 1 as a work, the radius at the center of the array is about 10 μm.
The growth of the first plating layer 6 until the hemispherical structure 8 becomes the same as in the first embodiment (see FIG. 1B).

Next, a bodied photoresist (AzP46)
20: made by Hoechst Co.) (FIG. 1C). Expose and develop the photoresist,
A second mask layer 7 is selectively provided on a region excluding the peripheral portion 5 of the wafer. Here, the second mask layer 7 has 700 × 700 first plating layers 6 and 1024 × 768.
, 700 × 350 and three types of regions are provided in the same plane.

Subsequently, using the substrate 1 as a work and using it as an anode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid and a brightener was used.
The exposed first plating layer 6 is subjected to electrolytic etching at an anode current density of 8 A / dm ² .

Next, by removing the first and second mask layers 3 and 7 with acetone and dimethylformamide,
700 × 700, 1024 × 768, 700 × 35
A hemispherical structure array having zero and three types of hemispherical structures 8 in the same plane could be formed.

At this time, the in-plane distribution of the radius of the hemispherical structure 8 in each region and between the regions was within 5%.

As described above, according to the present embodiment, in the microlens array mold or mold master having a plurality of regions having different structures, the in-plane distribution of the size of the hemispherical structure 8 can be easily reduced. A method could be provided.

Here, the mold for the convex microlens array can be formed in the same manner as in the first embodiment (FIG. 5).
(See (a) to (d)). Then, after applying the ultraviolet curable resin 12 to the convex microlens array mold 20, a glass substrate serving as the support substrate 13 is placed thereon, cured by ultraviolet irradiation, peeled off, and further cut out of each region. Thus, three types of convex microlens arrays 15 could be manufactured from one mold 20 (FIG. 5E).
(F)). Also in each of the convex microlens arrays, the in-plane distribution of the lens diameter was within 5%.

(Fifth Embodiment) A fifth embodiment will be described with reference to the manufacturing process diagram of FIG. Thermal oxidation using oxidizing gas,
A 4-inch φ silicon wafer having a 1 μm thick silicon dioxide film formed on both surfaces is used as the substrate 1 shown in FIG. The electrode layer 2 is formed on the wafer by continuously forming Ti and Ni at 50 ° and 500 °, respectively, by a vacuum sputtering method which is one of the thin film forming methods. A 1 μm-thick PSG film is formed thereon at 350 ° C. by a normal pressure CVD method to form a first mask layer 3. Here, the adhesion between Ni of the electrode layer 2 and PSG of the first mask layer 3 is strong.

Next, on the first mask layer 3 is formed a photoresist (Az 1500:
Hoechst Co., Ltd.) is applied, exposed and developed to provide an opening, and the mask layer 3 in the opening of the photoresist is removed by reactive ion etching using carbon tetrafluoride. Thus, the opening 4 is formed by partially exposing the electrode layer 2. The opening 4 has a circular shape, a diameter of 5 μm, and a distance between adjacent openings 4 of 25 μm.
m. In the present embodiment, 860 × 860 in total
The openings 4 were provided (see FIG. 9A).

Using the substrate 1 as a work, the electrode layer 2 as a cathode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid, and a brightener, a bath temperature of 60 ° C.
Ni plating is performed at a cathode current density of 40 A / dm ² .
The first plating layer 6 made of Ni is first deposited and grown from the opening 4, spreads over the first mask layer 3, and becomes a hemispherical structure 8 having a radius of about 10 μm at the center of the array.
The first plating layer 6 is grown (see FIG. 9B). The radius of the hemispherical structure 8 at the center of the array is about 10 μm
, The radius of the array peripheral portion 5 is about 15 μ at the maximum.
m hemispherical structures 8 were formed.

Next, a bodi type photoresist (AzP46)
20: manufactured by Hoechst Co.)
The second mask layer 7 is selectively provided in 700 × 700 regions excluding the 2 mm width of the array peripheral portion 5. Thereby, the first plating layer 6 in the array peripheral portion 5 is exposed (FIG. 9C). Here, the in-plane distribution of the diameter of the first plating layer 6 in the area covered by the second mask layer 7 was within 5%.

Subsequently, using the substrate 1 as a work and using it as an anode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid, and a brightener, a bath temperature of 60 ° C.
The exposed first plating layer 6 is subjected to electrolytic etching at an anode current density of 8 A / dm ² . Here, since Ni is used for the electrode layer 2, a part of the electrode layer 2 is also electrolytically etched (FIG. 9D).

Next, the first mask layer 3 in a region not covered with the second mask layer 7 is removed with a mixed aqueous solution of hydrofluoric acid and ammonium fluoride (FIG. 9E). Further, the second mask layer 7 is removed with acetone and dimethylformamide.

In the material used in this embodiment, since the mask layer 6 is relatively firmly fixed to the electrode layer 2 at this stage, it can be used as a mold or a mold master.

However, in this embodiment, the process proceeds to the next stage. The substrate (the PSG mask layer 3 in the used area is not removed because it does not hinder the subsequent steps, but rather strengthens the fixing of the hemispherical structure 8) N consisting of boric acid and brightener
Using an i-plating bath, bath temperature 60 ° C., cathode current density 40 A
At / dm ² , Ni plating is performed to grow until the adjacent first plating layers 6 are completely connected. By doing so, a hemispherical structure array having 700 × 700 hemispherical structures 8 could be formed (FIG. 9).
(F)). The in-plane distribution of the radius of curvature of the hemispherical structure 8 is 5%.
Was within.

Thereafter, a mold for a microlens array or a mold master was manufactured in the process shown in FIG. 5 as in the first embodiment, and a convex microlens array 15 was manufactured. Also in this convex microlens array 15, the in-plane distribution of the lens diameter was within 5%.

(Sixth Embodiment) A sixth embodiment will be described with reference to the manufacturing process diagram of FIG. The process up to the formation of the opening 4 is the same as in the first embodiment. The openings 4 are circular, have a diameter of 5 μm, and have a spacing of 1 between adjacent openings 4.
8 μm. In this embodiment, the total is 3900 × 3900
The openings 4 were provided (see FIG. 1A).

Using the substrate 1 as a work, the first step is performed until a hemispherical structure 8 having a radius of about 10 μm at the center of the array is formed.
The growth of the plating layer 6 is the same as in the first embodiment (see FIG. 1B).

Next, a bodi type photoresist (AzP46)
20: made by Hoechst Co.) (FIG. 1C). Expose and develop the photoresist,
The second mask layer 7 is selectively provided on 1064 × 808 regions excluding the peripheral portion 5 of the wafer.

Subsequently, using the substrate 1 as a work and using it as an anode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid, and a brightener, a bath temperature of 60 ° C.
The exposed first plating layer 6 is subjected to electrolytic etching at an anode current density of 8 A / dm ² .

Next, by removing the first and second mask layers 3 and 7 with acetone and dimethylformamide,
A hemispherical structure array having 1064 × 808 hemispherical structures 8 could be formed (see FIG. 1E). At this time, the in-plane distribution of the radius of the hemispherical structure 8 is 5
%.

Next, Ni electroless plating was performed at a bath temperature of 90 ° C. using an electroless Ni plating solution containing a hypophosphite reducing agent (S-780, manufactured by Nippon Kanigen Co., Ltd.).
Is formed (see FIG. 1F). As a result, the first plating layer 6 is firmly fixed on the electrode layer 2, and the electroless plating is used to form the second plating layer 9. was gotten. The radius of curvature of each plating layer in the diagonal direction and the horizontal direction is almost the same, and the average radius of curvature is 2
It was 0 μm, the distribution of the radius of curvature was within ± 1 μm or less, and a mold master having a hemispherical structure 8 having a uniform shape could be formed.

As described above, according to the present embodiment, in the mold or mold master for a microlens array using electroless plating, the in-plane distribution of the size of the hemispherical structure 8 can be easily reduced. Could be provided.

Next, a mold release agent (Nikkanon Tack:
(Nippon Chemical Industry). Using this substrate as a cathode, a nickel plating bath composed of nickel sulfamate, nickel bromide, boric acid, and a brightener, a bath temperature of 50 ° C.
Ni electroplating was performed at a cathode current density of 5 A / dm ² ,
Form a mold. Thereafter, the mold is released from the substrate to form a mold for the microlens array.

After applying the ultraviolet curable resin 12 to the microlens array mold, a glass substrate serving as a support substrate 13 is placed thereon, cured by ultraviolet irradiation, and then peeled off to form the convex microlens array 15. (See FIGS. 5E and 5F). Also in this convex microlens array, the in-plane distribution of the lens diameter was within 5%.

(Seventh Embodiment) A seventh embodiment will be described with reference to FIGS. A 5-inch φ silicon wafer having a 1 μm-thick silicon dioxide film formed on both sides by thermal oxidation using an oxidizing gas is used as the substrate shown in FIG. An electrode layer 2 is formed on the wafer by continuously forming Ti and Pt at 50% and 500 °, respectively, by a vacuum sputtering method which is one of the thin film forming methods. A positive photoresist (Az1500: manufactured by Hoechst) is applied thereon to form a first mask layer 3.

Next, the photoresist 3 is exposed and developed by photolithography to partially expose the electrode layer 2 to form an opening 4. The opening 4 has a circular shape,
Its diameter is 5 μm and the distance between adjacent openings 4 is 18 μm.
μm, and provided in an array in an area of 145 mmφ on the surface of the silicon wafer.

Using the substrate 1 as a work, the electrode layer 2 as a cathode, a Ni plating bath composed of nickel sulfate, nickel chloride, boric acid and a brightener, a bath temperature of 69 ° C.
Ni plating is performed at a cathode current density of 40 A / dm ² . N
The first plating layer 6 made of i is first deposited from the opening 4,
The first plating layer 6 grows, spreads on the first mask layer 3, and grows into a hemispherical structure 8 having a radius of about 10 μm at the center of the formation surface of the first plating layer 6.

Next, a positive photoresist (AzP46)
20: a mask layer 7 made of Hoechst (FIG. 1C). The photoresist is exposed and developed, and a second mask layer 7 is selectively provided on a region excluding the peripheral portion 5 of the wafer. Here, as shown in FIG.
The mask layer 7 of 1064 × 808 is provided at eight locations in the same plane at intervals of 1.8 mm 25, and is used for forming a marker 14 used for positioning such as bonding, other than the 1064 × 808 area. The second in any position of
Is formed. In FIG. 10, marker 1
The second mask layer 7 for forming 4 is formed near four corners of each region.
It is provided in places. Therefore, at the interval 25, FIG.
At 0, it is difficult to see, but four second mask layers 7 for forming the markers 14 are formed.

The substrate 1 was used as a work, and was exposed at a bath temperature of 60 ° C. and an anode current density of 8 A / dm ² using an Ni plating bath composed of nickel sulfate, nickel chloride, boric acid and a brightener as an anode. The first plating layer 6 is subjected to electrolytic etching (FIG. 1D).

Next, by removing the first and second mask layers 3 and 7 with acetone and dimethylformamide,
A hemispherical structure array having 1064 × 808 hemispherical structures 8 and eight markers 14 comprising the first plating layer 6 in the same plane could be formed. At this time, the in-plane distribution of the radius of the hemispherical structure 8 in each region and between the regions was within 5%.

Next, Ni electroless plating was performed at a bath temperature of 90 ° C. using an electroless Ni plating solution containing a hypophosphite reducing agent (S-780: manufactured by Nippon Kanigen Co., Ltd.).
Is formed (FIG. 1F). Thereby, the first plating layer 8 is firmly fixed on the electrode layer 2,
By using electroless plating to form the second plating layer 9, a microlens array mold or mold master having high gloss was obtained. The radius of curvature of each plating layer in the diagonal direction and the horizontal direction is almost equal, and the average radius of curvature is 2
It was 0 μm, the radius of curvature distribution was within ± 1 μm or less, and a mold master having a hemispherical structure 8 having a uniform shape could be formed (see FIG. 10).

As described above, according to the present embodiment, the in-plane distribution of the size of the hemispherical structure can be easily reduced in the microlens array mold or mold master using the electroless plating by forming a plurality of regions together with the marker. The manufacturing method which can be performed can be provided.

Next, a release agent for electroforming (Nikkanon Tack:
(Nippon Chemical Industry). Using this substrate as a cathode, a nickel plating bath composed of nickel sulfamate, nickel bromide, boric acid, and a brightener, a bath temperature of 50 ° C.
At a cathode current density of 5 A / dm ² , Ni electroplating is performed to form a mold. Thereafter, the mold was released from the substrate to form a microlens array mold. As a result, a microlens array mold capable of forming eight convex microlens arrays having the markers 14 from one mold was formed.

After applying the ultraviolet curable resin 12 to the microlens array mold, a glass substrate serving as the support substrate 13 is placed thereon, cured by irradiation with ultraviolet light, peeled off, and each region is cut out. 8 from one mold
The number of convex microlens arrays 15 can be manufactured (see FIGS. 5E and 5F). In this convex microlens array, the in-plane distribution of the lens diameter was within 5%.

[0118]

As described above, according to the present invention, it is easy to increase the size of the microlens array, the manufacturing process is easy, the controllability is high, the cost is low, and the in-plane distribution in the array is small. A mold or a mold master and a method for producing the same can be provided.

Further, the first plating layer removed by the electrolytic etching can be recovered in the plating solution or the counter electrode metal material, and even if it is an expensive metal material, it can be used without waste.
Cost reduction was realized. Further, it is possible to form one, a plurality, or a plurality of types of molds or mold masters for a microlens array in which the variation in the size of each lens forming hemispherical structure is suppressed within one substrate surface. did it.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a manufacturing process of a mold or a mold master for a microlens array according to a first embodiment of the present invention and the like.

FIG. 2 is a diagram showing a state of a cross section and a state of a top surface in a step (b) of FIG.

FIG. 3 is a view showing a state of a cross section and a state of a top surface in a step (c) of FIG. 1;

FIG. 4 is a diagram showing a state of a cross section and a state of a top surface in step (e) of FIG. 1;

FIG. 5 is a sectional view showing a manufacturing process of a microlens array mold, a mold master, a microlens array, and the like according to the first embodiment of the present invention.

FIG. 6 is a top view illustrating a part of a manufacturing process of a mold or a mold master for a microlens array according to a second embodiment of the present invention.

FIG. 7 is a top view showing a part of a manufacturing process of a mold or a mold master for a microlens array according to a second embodiment of the present invention.

FIG. 8 is a partially broken top view showing a convex microlens array with a marker according to a second embodiment of the present invention.

FIG. 9 is a cross-sectional view illustrating a manufacturing process of a mold or a mold master for a microlens array according to a fifth embodiment of the present invention.

FIG. 10 is a top view showing a part of the manufacturing process of a microlens array mold or a mold master according to a seventh embodiment of the present invention.

FIG. 11 is a view for explaining a conventional mold for a microlens array.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Electrode layer 3 First mask layer 4 Opening 5 Array peripheral part 6 First plating layer 7 Second mask layer 8 Hemispherical structure 9 Second plating layer 10 Sacrificial layer 11 Mold forming electrode Layer 12 UV curable resin 13 Support substrate 14 Marker 15 Convex microlens array 20 Mold 25 Interval

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takashi Ushijima 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Takayuki Yagi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon F term in the company (reference) 4F202 AA44 AD04 AH75 AJ02 AJ09 CA01 CA19 CB01 CB11 CD03 CD12 CD24 CK11 4F213 AA44 AD04 AH75 AJ02 AJ09 WA02 WA12 WA52 WA55 WA62 WA73 WA97 WB01 WB11 WC01

Claims (31)

[Claims] 1. A method for manufacturing a mold or a mold master for a microlens array, comprising: (1) a step of preparing a substrate having a conductive portion at least in part; Forming a first mask layer; (3) forming a plurality of openings of an appropriate shape in the first mask layer to expose a conductive portion; and (4) electroplating using the conductive portion as a cathode. Forming a first plating layer on the opening and the first mask layer through the opening, (5) forming an insulating layer on a selected area of the opening and the first plating layer; Forming a second mask layer, (6) removing the first plating layer in a region where the second mask layer is not formed by applying a voltage using the conductive portion as an anode by electrolytic etching, Characterized by having A method for producing a mold for a microlens array or a mold master. 2. After the step (6), (7) a step of removing the second mask layer, (8) a step of completely removing the first mask layer, and (9) a first plating layer. And forming a second plating layer or an electrodeposition layer over the conductive portion from the step (b). 3. After the step (6), (7) removing the first mask layer not covered by the second mask layer while leaving the second mask layer; (8) the second step The method for producing a mold or a mold master for a microlens array according to claim 1, further comprising a step of removing the mask layer. 4. The method according to claim 3, further comprising, after the step (8), (9) a step of forming a second plating layer or an electrodeposition layer from the first plating layer to the conductive portion. A method for producing a lens array mold or a mold master. 5. The method according to claim 3, wherein the first mask layer is formed of a material having good adhesion to the conductive portion. 6. The method according to claim 5, wherein the first mask layer is PSG. 7. The method of manufacturing a mold or a mold master for a microlens array according to claim 2, wherein the second plating layer is formed by electrolytic plating or electroless plating. 8. The method according to claim 7, wherein the second plating layer comprises a nickel plating layer. 9. The method for manufacturing a mold or a mold master for a microlens array according to claim 8, wherein the second nickel plating layer comprises an electroless plating layer. 10. The method for producing a mold or a mold master for a microlens array according to claim 8, wherein the second nickel plating layer contains phosphorus. 11. The method for manufacturing a mold or a mold master for a microlens array according to claim 1, wherein the openings are arranged in a periodic repetitive arrangement pattern in the plane of the substrate. 12. The method of manufacturing a mold or a mold master for a microlens array according to claim 1, wherein the first plating layer is formed separately in the step (4). 13. The method according to claim 1, wherein the second mask layer is formed in a plurality of regions in the step (5). 14. The microlens array mold according to claim 13, wherein in the step (5), the plurality of regions of the second mask layer include a plurality of regions respectively covering the first plating layers having the same arrangement. Alternatively, a method for producing a mold master. 15. The microlens array mold or mold according to claim 13, wherein in the step (5), the plurality of regions of the second mask layer include a plurality of regions covering the first plating layers having different arrangements. How to make a mold master. 16. The method according to claim 5, wherein a width of a region of the first plating layer not covered by the second mask layer in the step (5) is at least 2 mm around a region of the first plating layer covered by the mask layer. Item 16. A method for manufacturing a mold or a mold master for a microlens array according to any one of Items 1 to 15. 17. The in-plane distribution of the diameter of the first plating layer in the area covered by the second mask layer in the step (5) is 5
The method for producing a mold or a mold master for a microlens array according to any one of claims 1 to 16, which is within 0.1%. 18. A method according to claim 1, wherein a part of a region of the first plating layer covered with the second mask layer is for forming a first plating layer serving as an alignment marker. The method for producing a mold or a mold master for a microlens array according to any one of the above. 19. The method according to claim 1, wherein said electrolytic etching is performed in a plating bath as used in step (4).
9. The method for producing a mold or a mold master for a microlens array according to any one of 8. 20. The material according to claim 1, wherein the material of the conductive portion serving as the electrode and the material of the first plating layer formed in step (4) are materials that do not form an alloy layer. The method for producing a mold or a mold master for a microlens array described above. 21. The material of the conductive portion serving as the electrode and the material of the first plating layer formed in the step (4) are alloyed by diffusing the conductive portion material into the first plating layer side. 21. The method for producing a mold or a mold master for a microlens array according to claim 1, which is a material that does not form a layer. 22. The material of the conductive portion serving as the electrode and the material of the first plating layer formed in the step (4) are alloyed by diffusing the first plating layer material to the conductive portion side. 20. The method of manufacturing a mold or a mold master for a microlens array according to claim 1, which is a material for forming a layer. 23. A mask layer having a plurality of openings of a suitable shape formed on a substrate having a conductive portion at least in part by plating and growing the conductive portion as an electrode layer from the opening. A first electroplating layer, a first electroplating layer covering the first electroplating layer, and a second plating layer or an electrodeposition layer formed on the conductive portion. Or a mold master for a micro lens array. 24. The microlens according to claim 23, wherein the mask layer is entirely removed and the second plating layer or the electrodeposition layer is formed so as to cover only the first electroplating layer. Array mold or mold master. 25. A second plating layer or an electrodeposition layer is formed so as to cover the first electroplating layer and the mask layer, leaving a mask layer at the first electroplating layer. The mold or mold master for a microlens array according to claim 23. 26. The mold for a microlens array according to claim 23, 24, or 25, wherein the material of the conductive portion serving as the electrode and the material of the first electroplating layer are materials that do not form an alloy layer. Mold master. 27. The microlens array mold according to claim 26, wherein the material of the conductive portion serving as the electrode is platinum, and the first electroplated layer and the second plated layer are nickel plated layers. Or mold master. 28. The microlens array mold or mold master according to claim 23, wherein the second plating layer is formed by electroless plating. 29. The microlens array mold or mold master according to claim 28, wherein the second plating layer comprises an electroless nickel plating layer. 30. The mold or mold master for a microlens array according to claim 27, wherein the second nickel plating layer contains phosphorus. 31. An alignment marker comprising the first electroplated layer is formed at an arbitrary position around the first electroplated layer covered with the second plated layer or the electrodeposited layer. The mold or mold master for a microlens array according to any one of claims 23 to 30.