JP2001144084A - Film forming method and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a novel method of forming a silicon oxide film, which is different from a CVD method using SiH4 (mono-silane) or TEOS (tetraethoxysilane) and a semiconductor device having a silicon oxide film formed by using the same. SOLUTION: In this film forming method, a treatment gas containing TMOS (tetramethoxysilane) is made plasma and reacted to form a silicon oxide film 204 on a deposition target substrate 103.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a film forming method and a semiconductor device, and more particularly to a film forming method for forming a silicon-containing insulating film by a plasma CVD method (chemical vapor deposition), and the silicon-containing insulating film. The present invention relates to a semiconductor device having an insulating film.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a silicon oxide film, a reactive gas containing SiH ₄ (monosilane), TE
There is a CVD method using a reaction gas containing OS (Tetra-Ethoxy-Sinane). These silicon oxide films are used as an interlayer insulating film of a semiconductor device.

[0003]

However, when the silicon oxide film formed as described above is used for a semiconductor device, the semiconductor device may not have desired characteristics. The present invention has been made in view of the problems of the related art, and is a novel method of forming a silicon oxide film different from the CVD method using a reaction gas containing SiH ₄ (monosilane) or TEOS. It is an object of the present invention to provide a semiconductor device provided with a formed silicon oxide film.

[0004]

An object of the present invention is to provide a first invention, a TMOS (Tetra-Methoxy-TMOS).
The problem is solved by a film formation method in which a reaction gas containing silane) and an oxidizing gas is turned into plasma and reacted to form a silicon-containing insulating film on a substrate to be deposited. Alternatively, in the second invention, the reaction gas is the TMOS (Tetr
The problem is solved by the film forming method according to the first aspect, wherein the film contains the oxidizing gas in an amount equal to or more than a chemical equivalent for oxidizing a-methyoxy-silane.

According to a third aspect of the present invention, the oxidizing gas contains at least one of O ₂ , NO ₂ , NO, N ₂ O, CO, CO ₂ , and H ₂ O. The problem is solved by the film forming method described in the first invention or the second invention. Alternatively, in the fourth invention, the plasma conversion is performed as follows:
The method according to any one of the first to third inventions, wherein the high frequency power having a frequency of 13.56 MHz or the high frequency power having a frequency of 380 kHz is applied to the reaction gas. The problem is solved by a film forming method.

[0006] Alternatively, the problem is solved by a semiconductor device having the silicon-containing insulating film formed by using the film forming method according to any one of the first to fourth aspects of the present invention. .

[0007]

According to the film forming method of the present invention, the TMOS (Tet
A silicon oxide film is formed on a substrate to be deposited by a plasma CVD method (plasma chemical vapor deposition) using a reaction gas containing ra-methyoxy-silane and an oxidizing gas. The oxidizing gas used at this time is O ₂ ,
There are NO ₂ , NO, N ₂ O, CO, CO ₂ and H ₂ O, and any one of them is included in the reaction gas. The chemical formula of the above-mentioned TMOS is shown in Chemical formula 1.

The silicon oxide film formed in this manner has the following characteristics, which have been found by the research conducted by the present inventors. First, a silicon oxide film formed by a plasma CVD method containing TMOS and O ₂ in a reaction gas is included in the film as compared with a silicon oxide film formed using TEOS or SiH ₄ (monosilane). Low moisture and hydrogen content. Among them, the reason why the amount of water contained in the film is smaller than that when the film is formed using SiH ₄ (monosilane) is considered to be as follows.

That is, SiH ₄ (monosilane) is replaced by Si
H (hydrogen) in the form of Si—H bond in the silicon oxide film formed by using the
Are likely to remain. On the other hand, since the TMOS used in the film forming method according to the present invention does not have a Si—H bond,
It is considered that hydrogen hardly remains in the film as compared with the case where H ₄ (monosilane) is used.

Second, a plasma CV containing a TMOS and N ₂ O having a chemical equivalent or more to oxidize the TMOS in a reaction gas.
The silicon oxide film formed by the method D has a smaller amount of carbon contained in the film than the silicon oxide film formed by using TEOS. Third, it has better coverage characteristics than a silicon oxide film formed using SiH ₄ (monosilane). That is, as illustrated in FIG. 6, when the silicon oxide film 301 is formed using SiH ₄ (monosilane), voids 302 are easily formed between the wirings 203. On the other hand, it has been confirmed by the present inventor that such voids are not formed in the present invention containing TMOS in the reaction gas.

By the way, when moisture or hydrogen is contained in an insulating film of a semiconductor device, the characteristics of the semiconductor device deteriorate. In addition, poor coverage characteristics of the insulating film hinder high integration of the semiconductor device. Therefore, the first feature that the amount of moisture and hydrogen in the film is smaller than that of other film forming methods and the third feature that the coverage characteristic is good are formed by using the film forming method according to the present invention. Applying the formed silicon oxide film to a semiconductor device is expected to improve the characteristics of the semiconductor device.

[0012]

Next, embodiments of the present invention will be described with reference to the drawings. (1) Description of reaction gas used in the film forming method according to the present embodiment (i) TMOS (Tetra-M) contained in the reaction gas
Description of Ethoxy-Silane) In this embodiment, in order to form a silicon oxide film, T
A reaction gas containing MOS is used. This TMOS has the following structural formula.

[0013]

Embedded image

The chemical properties are shown in Table 1.

[0015]

[Table 1]

This is a colorless and transparent liquid, SiH
₄ Not explosive or self-combustible like (monosilane). Therefore, its handling is easier than that of SiH ₄ (monosilane). (Ii) Specific example of the reaction gas in which the oxidizing reaction gas is combined with the TMOS In this embodiment, the oxidizing gas is included in the reaction gas in addition to the TMOS.

As the reaction gas obtained by combining the TMOS and the oxidizing gas, there are the following seven types of reaction gases. Reaction gas obtained by adding O ₂ to TMOS Reaction gas obtained by adding N ₂ O to TMOS Reaction gas obtained by adding NO to TMOS Reaction gas obtained by adding NO ₂ to TMOS Reaction gas obtained by adding CO to TMOS Addition of CO ₂ to TMOS Reactive gas A reactive gas obtained by adding H ₂ O to TMOS In the above reactive gas, only one type of oxidizing gas is included in the reactive gas, but a plurality of types of oxidizing gas are included in the reactive gas. May be.

Among these, the film forming conditions when a reaction gas obtained by adding O ₂ to TMOS and a reaction gas obtained by adding N ₂ O to TMOS, and the characteristics of the silicon oxide film obtained by the reaction are described below. It will be described later. (2) Description of Application Example to Semiconductor Device (i) Description of Plasma CVD Device FIG. 1 is a configuration diagram showing a parallel plate type plasma CVD device used in the film forming method according to the present embodiment.

In FIG. 1, reference numeral 101 denotes a chamber for forming a film, and reference numerals 102 and 104 denote a pair of electrodes provided to face each other. The first high-frequency power source 10 is
7 is connected to the electrode 102 and the second high-frequency power supply 109 is connected to the electrode 102.
Is connected. Then, the first high-frequency power is supplied to the electrode 104 by the first high-frequency power supply 107. Similarly,
The second high-frequency power is supplied to the electrode 102 by the second high-frequency power supply 109.

When the film is formed, only one of the first and second high-frequency powers is applied. And
The electrode 102 also serves as a mounting table on which the substrate 103 is mounted. On the other hand, the electrode 104 to which the first high-frequency power source 107 is connected also serves as a shower head for discharging the reaction gas into the chamber 101. The reaction gas passes through the gas inlet 108 and passes through the shower head 104.
From the chamber 101.

The electrode 102 is connected to the substrate 10 to be deposited.
A heater (not shown) for heating 3 to a desired temperature is built in. Reference numeral 105 denotes wiring for supplying power to the heater. Reference numeral 106 denotes an exhaust port for exhausting the used reaction gas to the outside of the chamber 101 and maintaining the atmosphere in the chamber 101 at a desired pressure.

(Ii) Description of the Film Forming Method According to the Present Embodiment Hereinafter, the film forming method according to the present embodiment will be described by taking as an example a method of forming an interlayer insulating film of a semiconductor device. In particular, O
The respective film forming methods when using ₂ as an oxidizing gas and when using N ₂ O as an oxidizing gas will be described. A film forming method in the case of using O ₂ as the oxidizing gas view 2 (a) ~ (b) is a sectional view showing a film forming method according to the present embodiment.

The inventor of the present application conducted experiments with various film forming parameters (temperature, pressure, high frequency power, reaction gas flow rate, etc.) to invent the film forming method according to this embodiment. Therefore,
In the present embodiment, the film forming parameters are specified with a range. FIG. 2A is a cross-sectional view showing a state before forming a film on a deposition target substrate. In FIG. 2A, it is a 201 silicon substrate. Reference numeral 202 denotes a base insulating film such as a silicon oxide film or a BPSG film. This base insulating film 20
2, an aluminum wiring layer 203 is formed. These constitute the substrate 103 to be deposited.

In such a state, first, the substrate 10 to be deposited is
3 is placed on the electrode 102, and the pressure in the chamber 101 is reduced. After the mounting, the substrate 103 is heated by a heater (not shown) built in the electrode 102. This allows
The temperature of the substrate 103 to be deposited is maintained at 250 ° C. to 400 ° C. Subsequently, a liquid TMOS (Tetra-Meth)
(oxy-silane) is introduced into the chamber 101. This is because liquid TMOS is converted to liquid MFC (Mass-
Flow-Controller) to adjust the flow rate,
This is performed by discharging from the shower head 104.

At this time, the flow rate of the TMOS is 100 sc
cm to 300 sccm. In addition, TMOS
When introduced into the member 101, the TMOS is oxidized gas.
O _TwoIs added. O_TwoFlow rate of 100 for the experiment
The range was changed from 0 sccm to 9000 sccm. Destination
As described above, these TMOS and OMOS_TwoAnd reactive gas
Is configured.

At the same time, the speed of the reaction gas exhausted from the exhaust port 106 is adjusted to maintain the pressure in the chamber 101 in the range of 0.5 Torr to 2.2 Torr.
Next, one of the first and second high-frequency powers is applied to the electrode. That is, the first high-frequency power is applied to the electrode 104 or the second high-frequency power is applied to the electrode 102. Note that the inventor of the present application has a frequency of 13.56 MHz.
The high frequency power of z was used as the first high frequency power, and the high frequency power of 380 kHz was used as the second high frequency power.

The power of the high-frequency power applied at this time is 250 to 1500 W both when the first high-frequency power is applied and when the second high-frequency power is applied. Thereby, the reaction gas between the electrodes 102 and 104 is turned into plasma. And by this plasma,
As shown in FIG. 2B, a silicon oxide film 204 is formed on the substrate 103 to be deposited.

Next, the film quality of the silicon-containing insulating film thus formed will be described. Table 2 summarizes the film forming conditions when forming the silicon oxide film 204 using TMOS and O ₂ as the reaction gas as described above.

[0029]

[Table 2]

(Refractive index) 1.45 to 1.47. (Film forming rate) was 800 ° / min to 4500 ° / min.
In addition, according to the measurement results performed by the inventor of the present application, it was found that the film formation rate was increased by increasing the power of the first or second high-frequency power. Similarly, it was found that the film formation rate was increased even when the flow rate of the reaction gas was increased.

(Stress) Only the first high frequency power is applied,
When the frequency is 13.56 MHz, the stress of the formed silicon oxide film 204 is 0.5 × 10 ⁹ dyne
/ Cm ² to 4 × 10 ⁹ dyne / cm ² . When only the second high frequency power is applied and the frequency is set to 380 kHz, the stress is 0.5 × 10
The compressive stress was ⁹ dyne / cm ^{2 to} 3 × 10 ⁹ dyne / cm ² .

As described above, it has been found that the stress of the silicon oxide film 204 changes depending on the frequency of the high frequency power applied to convert the reaction gas into plasma. Even when using the deposition method N ₂ O in the case of using the N ₂ O as the oxidizing gas as the oxidizing gas, in forming the silicon oxide film 204 as in the case of using the O ₂ as explained as the oxidizing gas be able to.

Table 3 shows the conditions for forming the silicon oxide film in this case.

[0034]

[Table 3]

(3) Comparative Example Next, the film quality of the silicon oxide film formed by the film forming method according to this embodiment will be described in comparison with a silicon oxide film formed by using another reaction gas. In particular,
SiH ₄ (monosilane) or TEOS in the reaction gas
C containing (Tetra-Ethoxy-Sinane)
Description will be made in comparison with a silicon oxide film formed by the VD method.

(I) First Comparative Example In this comparative example, attention is paid to the water content of a silicon oxide film formed using TMOS and O ₂ as a reaction gas, and the water content is determined using another reaction gas. This is compared with the moisture content of the formed silicon oxide film. FIG. 3 shows TDS (Therma
l-Dissolution-Spectroscop
FIG. 9 is a characteristic diagram illustrating a result of investigating a moisture content in a silicon oxide film 204 by a method e). In the TDS method, a solid sample on which impurities are adsorbed is heated, impurities separated from the solid sample are detected by a mass spectrometer, and the amount of impurities is obtained as a function of temperature.

In FIG. 3, the vertical axis shows the water content in weight percent (wt%), and the horizontal axis shows the temperature when the analysis sample of the silicon oxide film 204 is heated. In this investigation, the analytical sample was heated and its temperature was raised from room temperature to 800 ° C. And, as the analysis sample, the TMOS flow rate 15
0 sccm, O ₂ flow rate 850 sccm, pressure 2.0 To
rr, substrate temperature 350 ° C., frequency of first high frequency power 1
A silicon oxide film formed under the conditions of 3.56 MHz and the first high frequency power of 300 W was used.

FIG. 3 shows SiH ₄ (monosilane).
Is formed by a CVD method containing in a reaction gas, and TE
Investigation results of a silicon oxide film formed by a CVD method containing an OS (Tetra-Ethoxy-Sinane) in a reaction gas are also shown for comparison. As can be seen from FIG. 3, when TMOS and O ₂ are used as the reaction gas, no remarkable waveform indicating the presence of moisture in the analysis sample is observed in a temperature range of 400 ° C. or less. When the temperature exceeds 400 ° C., a waveform indicating that structural water is present in the analysis sample is confirmed. Here, the structural water means water present in the film in a state of Si—H bond.

As described above, the analysis sample is heated,
When the total amount of moisture contained in the film was determined, it was 0.1 wt%
It was found that about 0.4 wt% of water was contained in the film. On the other hand, as shown in FIG.
₄ It was found that 1.33 wt% of water was contained in the silicon oxide film when formed by the CVD method containing (monosilane) in the reaction gas. Further, it was found that 0.49 wt% of water was contained in the silicon oxide film when formed by the CVD method containing TEOS in the reaction gas.

As can be seen from the results of this investigation, in this embodiment in which a silicon oxide film is formed using TMOS and O ₂ as reaction gases, SiH ₄ (monosilane), TEOS
The moisture content of the film is smaller than when a silicon oxide film is formed using a reaction gas. (Ii) Second Comparative Example In this comparative example, attention is paid to the hydrogen content of a silicon oxide film formed using TMOS and O ₂ as a reaction gas, and the hydrogen content is formed using another reaction gas. Compare with the hydrogen content of the silicon oxide film.

FIG. 4 is a characteristic diagram for explaining a result obtained by examining the hydrogen content in the silicon oxide film 204 by using the TDS method described in the first comparative example. In FIG. 4, the vertical axis indicates the relative ion intensity of hydrogen ions released from the analysis sample of the silicon oxide film 204 by heating. The horizontal axis indicates the temperature when the analysis sample of the silicon oxide film 204 is heated.

In this comparative example, the analysis sample was heated as in the first comparative example, and the temperature was increased from room temperature to 800 ° C. As an analysis sample, a TMOS flow rate of 300 sccm, an O ₂ flow rate of 1700 sccm, and a pressure of 0.
5 Torr, substrate temperature 350 ° C., frequency of first high frequency power 13.56 MHz, power 30 of first high frequency power
A silicon oxide film formed under the condition of 0 W was used.

FIG. 4 shows SiH ₄ (monosilane).
Is formed by a CVD method containing in a reaction gas, and TE
Investigation results of a silicon oxide film formed by a CVD method containing an OS in a reaction gas are also shown for comparison. As can be seen from FIG. 4, in the present embodiment in which a silicon oxide film is formed using TMOS and O ₂ as the reaction gas,
The hydrogen content in the film is extremely small as compared with the case where H ₄ (monosilane) is used as the reaction gas.

This is because SiH ₄ (monosilane) is Si—
It is considered that this is because hydrogen has a tendency to remain in the silicon oxide film formed using SiH ₄ (monosilane) because it has an H bond. On the other hand, the TMOS used in the present embodiment has Si
Has no -H bond. Accordingly, it is considered that when using TMOS, the hydrogen content of the silicon oxide film formed by using TMOS is smaller than when using SiH ₄ (monosilane).

(Iii) Third Comparative Example In this comparative example, attention was paid to the carbon content of a silicon oxide film formed using TMOS and N ₂ O as a reaction gas, and the carbon content was determined using another reaction gas. Compare with the carbon content of the formed silicon oxide film. As can be seen from the structural formula, TMOS contains C (carbon). Therefore, T
A silicon-containing insulating film formed by a CVD method containing MOS in a reaction gas may contain carbon.

Further, like TMOS, TEOS also contains carbon. Therefore, carbon may be contained in a silicon oxide film formed by a CVD method including TEOS in a reaction gas. Therefore, the present inventor investigated how much the amount of carbon contained in the silicon oxide film formed by using TMOS and using TEOS is different.

FIG. 5 shows AES (Auger-Elect).
FIG. 4 is a characteristic diagram illustrating a result of examining a carbon content in a silicon oxide film 204 by using a ron-spectroscopy method. The AES method is a measurement method in which the energy spectrum of Auger electrons emitted from the surface of an analysis sample due to the Auger effect is measured, and the amount of elements contained in the surface of the analysis sample is measured.

In FIG. 5, the vertical axis represents the silicon oxide film 20.
4 (at /%). And the horizontal axis is N
The flow rate of ₂ O, which is normalized by the amount of oxygen (an amount equivalent to a chemical equivalent) required to convert TMOS to SiO ₂ . In this case, the analysis sample was a TMOS flow rate of 300 sccm, a pressure of 0.5 Torr, and a substrate temperature of 35.
Under the condition of 0 ° C. and the frequency of the first high frequency power of 13.56, the power of the first high frequency power is 500 W, 1000 W,
And 1500 W, and the N ₂ O flow rate was changed under each power.

FIG. 5 also shows, for comparison, the results of investigation on a silicon oxide film formed by CVD using TEOS and N ₂ O as a reaction gas. As can be seen from FIG. 5, when N ₂ O of less than the chemical equivalent is added, that is, when the normalized N ₂ O flow rate is 1 or less, the TMOS
The carbon content of the silicon oxide film 204 is increased both in the case of using TEOS and in the case of using TEOS.

However, when TMOS and N ₂ O having a chemical equivalent or more are used as the reaction gas, the carbon content of the silicon oxide film 204 is reduced to an amount below the detection limit of AES. On the other hand, in a silicon oxide film formed using TEOS and N ₂ O having a chemical equivalent or more as a reaction gas, more carbon is contained in the film than in the case where TMOS is used.

From this investigation result, the silicon oxide film 2 is more likely to be used when using TMOS than when using TEOS.
It can be seen that the carbon content of No. 04 is small. (Iv) Fourth Comparative Example In this comparative example, the coverage characteristics of a silicon oxide film formed by using TMOS and O ₂ as a reaction gas and using TMOS and N ₂ O as a reaction gas are described. Pay attention to. Then, this coverage characteristic is compared with that of a silicon oxide film formed using SiH ₄ (monosilane).

FIG. 6 is a sectional view of a silicon oxide film formed using SiH ₄ (monosilane). 6, the same components as those described with reference to FIG. 2 are denoted by the same reference numerals as those in FIG. As shown in FIG. 6, a silicon oxide film 3 is formed by using SiH ₄ (monosilane).
When 01 is formed, voids 302 are easily formed between adjacent aluminum wirings 203.

On the other hand, the present inventor has confirmed that the void 302 is not formed in the present embodiment in which TMOS is included in the reaction gas. in this way,
Compared to the case where SiH ₄ (monosilane) is used, the coverage characteristic is better when the TMOS is used as in the present embodiment. Table 4 summarizes the above Comparative Examples 1 to 4. Table 4 also includes comparison items other than those described above.

[0054]

[Table 4]

As described in Comparative Examples 1 and 2, the silicon oxide film formed by using the reaction gas containing TMOS as in the present embodiment has a moisture content and a hydrogen content of SiH in the film. _It has the feature that it is less than when using ₄ or TEOS. Further, as described in Comparative Example 4, the silicon oxide film formed using the reaction gas containing TMOS as in the present embodiment has a higher coverage characteristic than the silicon oxide film formed using SiH _4. Is good.

According to these characteristics, the present inventors have found that a semiconductor device having excellent characteristics can be provided by using such a silicon oxide film for a semiconductor device for the following reasons. That is, recently, DRAM
Ta ₂ O ₅ and BST (Ba _x Sr _1-x Ti
The introduction of a high dielectric film such as O ₃ ) is being studied. Similarly, as a capacitor material used for a nonvolatile memory device, PZT (Lead-Zirconate-T
It has been studied to introduce a ferroelectric film such as itanate or Y-1.

High dielectric films such as Ta ₂ O ₅ and BST are considered to be weak against substances having a reducing property. Therefore, it is preferable that the silicon oxide film that protects these high dielectric films does not contain a reducing substance. In particular, hydrogen or water acts as the above-described reducing factor, and may release oxygen from the high dielectric film and increase the dielectric constant of the high dielectric film. Therefore, hydrogen or water may be contained in the silicon oxide film. Is considered to be undesirable.

Similarly, ferroelectric films such as PZT and Y-1 are considered to be weak against substances having a reducing property. From the above, it is preferable that the silicon oxide film used for the semiconductor device does not contain hydrogen or water. In addition, this silicon oxide film must be formed to withstand miniaturization of semiconductor devices. Specifically, it must be formed to have good coverage characteristics. Further, it is preferable that the Si (silicon) source for forming the silicon oxide film can be safely handled.

When a silicon oxide film formed by using a reaction gas containing TMOS as in this embodiment is used for a semiconductor device, the silicon oxide film is made of SiH ₄ or TEH.
Compared to the case where the film is formed using an OS, the amount of moisture and the amount of hydrogen in the film are small and the coverage characteristics are good. Therefore, when a silicon-containing insulating film formed using the method for forming a silicon-containing insulating film according to the present embodiment is applied to a semiconductor device, the semiconductor device becomes a silicon oxide film formed using SiH ₄ or TEOS. It is expected to have excellent characteristics as compared with the case where it is applied. Further, TMOS is SiH
₄ Because there is no self-combustibility like that seen in (monosilane),
Its handling is easier than SiH ₄ (monosilane).

In addition to the silicon oxide film for protecting the high dielectric film as described above, a silicon oxide film formed by using the film forming method according to the present embodiment may be applied to an interlayer insulating film and the like. it can.

[0061]

As described above, according to the film forming method of the present invention, the TMOS (Tetra-Methoxy) is used.
The following effects can be obtained by forming a silicon oxide film by using a plasma CVD method including a reaction gas containing -Silane) and an oxidizing gas.

(1) SiH ₄ (monosilane) or TEOS
Can be formed as compared with a silicon oxide film formed by a CVD method containing, as a reaction gas, in which moisture and hydrogen contained in the film are reduced. (2) A silicon oxide film in which carbon contained in the film is reduced can be formed as compared with a silicon oxide film formed by a CVD method containing TEOS as a reaction gas.

(3) A silicon oxide film having better coverage characteristics can be formed as compared with a silicon oxide film formed by a CVD method containing SiH ₄ as a reaction gas. In addition, by applying a silicon oxide film formed by a plasma CVD method including TMOS and an oxidizing gas to a reaction gas as an insulating film of a semiconductor device, characteristics of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a plasma CVD apparatus used in a film forming method according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a film forming method according to an embodiment of the present invention.

FIG. 3 is TDS (Thermal-Discorpti).
FIG. 4 is a characteristic diagram illustrating a result of an investigation of a water content in a silicon oxide film by an on-spectroscopic method.

FIG. 4 is a characteristic diagram illustrating a result of an investigation of a hydrogen content in a silicon oxide film by a TDS method.

FIG. 5: AES (Auger-Electron-Sp)
FIG. 4 is a characteristic diagram illustrating a result of an investigation of a carbon content in a silicon oxide film by an EB (electroscopy) method.

FIG. 6 is a cross-sectional view of a silicon oxide film formed using SiH ₄ (monosilane).

[Explanation of symbols]

 101 chamber, 102, 104 electrode, 103 substrate to be deposited, 105 power supply wiring to heater, 106 exhaust port, 107 first high frequency power supply, 108 gas inlet, 109 second high frequency power supply, 201 silicon substrate, 202 base Insulating film, 203 wiring aluminum, 204, 301 silicon oxide film, 302 void.

Continued on the front page (72) Inventor Tokumasu Toku 2-13-29 Konan, Minato-ku, Tokyo Inside Semiconductor Process Research Laboratories (72) Inventor Makoto Kurobi 3-11-28 Mita, Minato-ku, Tokyo Canon Sales Co., Ltd. F term (reference) 5F045 AA09 AB32 AC08 AC11 AD06 AD07 AE19 AE21 BB04 BB19 DC61 DC64 DP02 DP03 DQ10 EK05

Claims (5)

[Claims] 1. A TMOS (Tetra-Methoxy)
A method of forming a silicon-containing insulating film on a deposition target substrate by converting a reaction gas containing a silane) and an oxidizing gas into plasma and reacting them. 2. The method according to claim 1, wherein the reaction gas is the TMOS (Tet).
2. The film forming method according to claim 1, wherein the oxidizing gas contains at least a stoichiometric amount of oxidizing gas for oxidizing (ra-Methoxy-Silane). 3. 3. The oxidizing gas comprises O ₂ , NO ₂ , N
The film forming method according to claim 1, wherein at least one of O, N ₂ O, CO, CO ₂ , and H ₂ O is included. 4. The method according to claim 1, wherein the frequency of the plasma is 13.56.
4. The method according to claim 1, wherein the method is performed by applying high-frequency power of MHz or high-frequency power of 380 kHz to the reaction gas. 5. 5. A semiconductor device comprising the silicon-containing insulating film formed by using the film forming method according to claim 1.