JP2001123045A - Photosemiconductor sealing epoxy resin composition - Google Patents
Photosemiconductor sealing epoxy resin compositionInfo
- Publication number
- JP2001123045A JP2001123045A JP30465899A JP30465899A JP2001123045A JP 2001123045 A JP2001123045 A JP 2001123045A JP 30465899 A JP30465899 A JP 30465899A JP 30465899 A JP30465899 A JP 30465899A JP 2001123045 A JP2001123045 A JP 2001123045A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- para
- resin
- sealing epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、透明性及び耐半田
性に優れた光半導体封止用エポキシ樹脂組成物に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for encapsulating an optical semiconductor having excellent transparency and solder resistance.
【０００２】[0002]
【従来の技術】オプトエレクトロニクスの分野におい
て、酸無水物硬化型のエポキシ樹脂組成物は、透明性に
優れており、特に、無色透明のエポキシ樹脂を用いる
と、可視光領域でも高い透過率が得られるため、フォト
センサー、ＬＥＤ、発光素子、受光素子等の封止材料に
用いられている。2. Description of the Related Art In the field of optoelectronics, an acid anhydride-curable epoxy resin composition is excellent in transparency. In particular, when a colorless and transparent epoxy resin is used, a high transmittance can be obtained even in the visible light region. Therefore, it is used as a sealing material for photo sensors, LEDs, light emitting elements, light receiving elements, and the like.
【０００３】しかし、酸無水物硬化型のエポキシ樹脂組
成物は、酸無水物基が、親水性が高いため、樹脂組成物
の吸水率が高くなり、表面実装型パッケージを、ＩＲリ
フロー等で実装した場合、熱衝撃によるパッケージのク
ラックや、素子・リードフレームとエポキシ樹脂組成物
の硬化物との剥離が生じる不良が、多発するという問題
がある。[0003] However, the acid anhydride-curable epoxy resin composition has a high hydrophilicity in the acid anhydride group, so that the water absorption of the resin composition is high, and the surface mount type package is mounted by IR reflow or the like. In such a case, there is a problem that cracks in the package due to thermal shock and defects that peel off the element / lead frame from the cured product of the epoxy resin composition frequently occur.
【０００４】一方、フェノールノボラック樹脂を硬化剤
に用いるエポキシ樹脂組成物においては、吸水性は低減
できるものの、分子構造中のメチレン基が、活性ラジカ
ル種により、酸化されやすく、熱により著しく着色する
という欠点がある。On the other hand, in an epoxy resin composition using a phenol novolak resin as a curing agent, although the water absorption can be reduced, the methylene group in the molecular structure is easily oxidized by an active radical species and is significantly colored by heat. There are drawbacks.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上述の問題
点を解決すべく鋭意検討の結果なされたものであり、透
明性および耐半田性に優れた光半導体封止用エポキシ樹
脂組成物を提供するものである。DISCLOSURE OF THE INVENTION The present invention has been made as a result of intensive studies in order to solve the above-mentioned problems, and an epoxy resin composition for encapsulating an optical semiconductor having excellent transparency and solder resistance has been developed. To provide.
【０００６】[0006]
【課題を解決するための手段】本発明は、エポキシ樹脂
（Ａ）、パラ置換フェノール樹脂（Ｂ）、硬化促進剤
（Ｃ）を必須成分とすることを特徴とする光半導体封止
用エポキシ樹脂組成物である。According to the present invention, there is provided an epoxy resin for encapsulating an optical semiconductor, comprising an epoxy resin (A), a para-substituted phenol resin (B) and a curing accelerator (C) as essential components. A composition.
【０００７】[0007]
【発明の実施の形態】本発明で用いるエポキシ樹脂は、
特に制限されるものではないが、透明性の観点から、着
色性の少ないものが、より好ましい。例えば、ビスフェ
ノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ
樹脂、ビスフェノールＳ型エポキシ樹脂、フェノールノ
ボラック型エポキシ樹脂、オルソクレゾールノボラック
型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリグリ
シジルイソシアヌルレート等の複素環エポキシ樹脂等が
挙げられ、単独で、もしくは併用して用いることができ
る。耐熱性の観点から、フェノールノボラック型エポキ
シ樹脂、オルソクレゾールノボラック型エポキシ樹脂等
の分子内に、エポキシ基が３個以上有する多官能型のエ
ポキシ樹脂を用いれば、ガラス転移温度が高くなり、よ
り好ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is:
Although not particularly limited, those having low coloring properties are more preferable from the viewpoint of transparency. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, orthocresol novolak type epoxy resin, biphenyl type epoxy resin, heterocyclic epoxy resin such as triglycidyl isocyanurate and the like. And can be used alone or in combination. From the viewpoint of heat resistance, the use of a polyfunctional epoxy resin having three or more epoxy groups in a molecule such as a phenol novolak epoxy resin or an orthocresol novolak epoxy resin increases the glass transition temperature, which is more preferable. .
【０００８】本発明で用いるパラ置換フェノール樹脂
は、芳香環のパラ位に置換基を有するフェノール類であ
るが、例えば、パラクレゾールなどとホルムアルデヒド
とを、触媒存在下、重縮合させ反応させた後、脱水する
ことにより得ることができる。この場合、フェノール性
水酸基に対して、オルト位及びパラ位が、全て置換基で
置換されているため、活性ラジカル種との反応性は低
く、着色の原因となるキノン構造になりにくい性質があ
る。The para-substituted phenolic resin used in the present invention is a phenol having a substituent at the para-position of the aromatic ring. For example, after a polycondensation of paracresol or the like with formaldehyde in the presence of a catalyst, the polycondensate is reacted. Can be obtained by dehydration. In this case, since the ortho position and the para position are all substituted with substituents with respect to the phenolic hydroxyl group, the reactivity with the active radical species is low, and the quinone structure that causes coloring is hardly formed. .
【０００９】光半導体封止用エポキシ樹脂組成物の硬化
剤として、パラ置換フェノール樹脂を用いた場合、着色
は少なく、透明性に優れ、さらに、酸無水物基といった
親水性の官能基を有さないため、吸水性が低く、耐半田
性の試験によれば、パッケージのクラックの発生がなく
なり、耐半田性が向上する。パラ置換フェノール樹脂と
しては、パラクレゾールノボラック樹脂、ビスフェノー
ルＡ型ノボラック樹脂、２−（４−ヒドロキシフェニ
ル）−２−［４−［１，１−ビス（４−ヒドロキシフェ
ニル）エチル］フェニル］プロパン、１，３−ビス［４
−［１−（４−ヒドロキシフェニル）−１−［４−［１
−（４−ヒドロキシフェニル）フェニル］−１−メチル
エチル］フェニル］エチル］フェノキシ］―２−プロパ
ノール、パラビニルフェノールのラジカル重合により得
られたポリビニルフェノール樹脂等が例示できる。ま
た、エポキシ樹脂が、分子内に３個以上のエポキシ基を
有するものを用いた場合、パラ置換フェノール樹脂はビ
スフェノールＡ、ビスフェノールＳやビスフェノールフ
ルオレン等の２官能のフェノール樹脂を用いることがで
きる。パラ置換フェノール樹脂は、単独でも２種以上を
混合して用いても良い。また、透明性等の特性に影響し
ない程度に、他の硬化剤を併用して用いることは何ら差
し支えがない。When a para-substituted phenol resin is used as a curing agent for an epoxy resin composition for encapsulating an optical semiconductor, it is less colored, has excellent transparency, and has a hydrophilic functional group such as an acid anhydride group. Therefore, the water absorption is low, and according to the solder resistance test, the occurrence of cracks in the package is eliminated, and the solder resistance is improved. Examples of the para-substituted phenol resin include para-cresol novolak resin, bisphenol A type novolak resin, 2- (4-hydroxyphenyl) -2- [4- [1,1-bis (4-hydroxyphenyl) ethyl] phenyl] propane, 1,3-bis [4
-[1- (4-hydroxyphenyl) -1- [4- [1
Examples thereof include-(4-hydroxyphenyl) phenyl] -1-methylethyl] phenyl] ethyl] phenoxy] -2-propanol and polyvinylphenol resin obtained by radical polymerization of paravinylphenol. When an epoxy resin having three or more epoxy groups in a molecule is used, a bifunctional phenol resin such as bisphenol A, bisphenol S or bisphenol fluorene can be used as the para-substituted phenol resin. The para-substituted phenol resin may be used alone or in combination of two or more. In addition, there is no problem in using other curing agents in combination to the extent that properties such as transparency are not affected.
【００１０】本発明において、パラ置換フェノール樹脂
の配合割合は、エポキシ樹脂のエポキシ基に対して、用
いる全フェノール樹脂のフェノール性水酸基の当量比
が、好ましくは０．５〜２．０、特に好ましくは０．７
〜１．５である。０．５〜２．０の範囲を外れると、硬
化性等が低下するので好ましくない。In the present invention, the mixing ratio of the para-substituted phenol resin is preferably such that the equivalent ratio of the phenolic hydroxyl groups of all the phenol resins used to the epoxy groups of the epoxy resin is 0.5 to 2.0, particularly preferably 0.5 to 2.0. Is 0.7
1.5. If the ratio is outside the range of 0.5 to 2.0, the curability and the like deteriorate, which is not preferable.
【００１１】本発明に用いる硬化促進剤は、エポキシ樹
脂（Ａ）と、パラ置換フェノール樹脂（Ｂ）との硬化反
応を促進するものなら、何ら制限されるものではない
が、ジアザビシクロウンデセンなどの双環式アミジン類
やイミダゾール類等の３級アミン類、トリフェニルホス
フィン、トリシクロヘキシルホスフィン等の有機ホスフ
ィン類、テトラフェニルホスホニウムボレートなどのホ
スホニウム塩類等が挙げられ、単独でも混合して用いて
も良い。The curing accelerator used in the present invention is not particularly limited as long as it accelerates the curing reaction between the epoxy resin (A) and the para-substituted phenol resin (B). Tertiary amines such as bicyclic amidines and imidazoles; organic phosphines such as triphenylphosphine and tricyclohexylphosphine; and phosphonium salts such as tetraphenylphosphonium borate. Is also good.
【００１２】本発明の光半導体封止用エポキシ樹脂組成
物に、透明性の観点で酸化防止剤として、有機リン化合
物、ヒンダーフェノール化合物、チオエーテル化合物等
を添加すると、より好ましい。また、成形時に、金型に
外部離型剤を用いずに成形するために、天然ワックス、
合成ワックス、高級脂肪酸及びその金属塩類もしくはパ
ラフィン等の内部離型剤を、添加しても良い。It is more preferable to add an organic phosphorus compound, a hindered phenol compound, a thioether compound or the like as an antioxidant from the viewpoint of transparency to the epoxy resin composition for encapsulating an optical semiconductor of the present invention. Also, at the time of molding, in order to mold without using an external mold release agent in the mold, natural wax,
An internal release agent such as synthetic wax, higher fatty acid and its metal salts or paraffin may be added.
【００１３】本発明の光半導体封止用エポキシ樹脂組成
物には、上記成分以外に、必要に応じて、臭素化エポキ
シ樹脂、酸化アンチモン、リン化合物等の難燃剤、酸化
ビスマス水和物等の無機イオン交換体、γ―グリシドキ
シプロピルトリメトキシシラン等のカップリング剤、公
知の着色剤、シリコーンオイル、シリコーンゴム等の低
応力化成分、変性剤、溶融破砕シリカ粉末、溶融球状シ
リカ粉末、結晶シリカ粉末、２次凝集シリカ粉末、アル
ミナ、タルク、クレー、ガラス等の無機充填剤等の添加
物を、添加することは、何ら差し支えがない。The epoxy resin composition for encapsulating an optical semiconductor of the present invention may further comprise, if necessary, a flame retardant such as a brominated epoxy resin, an antimony oxide, a phosphorus compound, a bismuth oxide hydrate, etc. Inorganic ion exchangers, coupling agents such as γ-glycidoxypropyltrimethoxysilane, known colorants, silicone oil, low-stress components such as silicone rubber, modifiers, fused crushed silica powder, fused spherical silica powder, Addition of an additive such as a crystalline silica powder, a secondary aggregated silica powder, an inorganic filler such as alumina, talc, clay, and glass can be used without any problem.
【００１４】本発明の樹脂組成物は、（Ａ）〜（Ｃ）成
分、及びその他の添加剤を、ミキサー等を用いて混合
後、加熱ニーダや加熱ロール、押し出し機等を用いて加
熱混練し、続いて冷却、粉砕することで得られる。The resin composition of the present invention is obtained by mixing the components (A) to (C) and other additives using a mixer or the like, and then kneading the mixture using a heating kneader, a heating roll, an extruder or the like. , Followed by cooling and pulverization.
【００１５】本発明の樹脂組成物を用いて、半導体装置
等の電子部品を封止し、半導体装置を製造するのには、
トランスファーモールド、コンプレッションモールド、
インジェクションモールド等の従来の成形方法で、硬化
成形すれば良い。To seal an electronic component such as a semiconductor device using the resin composition of the present invention to manufacture a semiconductor device,
Transfer mold, compression mold,
What is necessary is just to carry out hardening molding by the conventional molding methods, such as an injection mold.
【００１６】[0016]
【実施例】以下に、実施例を用いて、本発明を具体的に
示すが、本発明は、これによってなんら限定されるもの
ではない。EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited thereto.
【００１７】<実施例１〜６、比較例１，２>本発明の樹
脂組成物は、（Ａ）〜（Ｃ）成分、及び各種添加剤等
を、表１、２に示した配合割合で、混合し、２本ロール
を用いて、５０〜９０℃で５分間混練し、得られた混練
物シートを、冷却後粉砕して、樹脂組成物を得た。この
樹脂組成物を、低圧トランスファー成形機を用いて、金
型温度１７５℃、注入圧力６．８６ｘ１０6Ｐａ、硬化
時間２分の条件で、各試験で用いるテストピースを作製
した。評価方法は、以下の通り。結果は、表１、２にま
とめて示す。<Examples 1 to 6, Comparative Examples 1 and 2> The resin compositions of the present invention contain components (A) to (C), various additives, and the like in the proportions shown in Tables 1 and 2. The mixture was kneaded for 5 minutes at 50 to 90 ° C. using two rolls, and the obtained kneaded material sheet was cooled and pulverized to obtain a resin composition. Using a low-pressure transfer molding machine, test pieces used in each test were prepared from the resin composition under the conditions of a mold temperature of 175 ° C., an injection pressure of 6.86 × 10 6 Pa, and a curing time of 2 minutes. The evaluation method is as follows. The results are summarized in Tables 1 and 2.
【００１８】（光透過率の測定）１０×３０×１ｍｍの
テストピースを作製し、分光光度計 島津自記分光光度
計ＵＶ−３１００を用いて、１ｍｍ厚さで４００ｎｍの
光透過率を測定した。結果は表１にまとめて示す。 （吸湿率の測定）直径５０ｍｍ、厚さ３ｍｍの円板状テ
ストピースを作製し、８５℃、湿度８５％に設定した高
温高湿槽に放置し、１６８時間後の重量増加率を吸湿率
として測定した。結果は表１にまとめて示す。 （ガラス転移温度の測定）１０×５×５ｍｍのテストピ
ースを作製し、ＴＭＡを用い、５℃／ｍｉｎの昇温速度
で昇温して測定し、テストピースの伸び率が急激に変化
する温度とした。結果は表１にまとめて示す。 （バコール硬度の測定）８０×１０×４ｍｍのテストピ
ースを作製した。金型が開いて１０秒後のテストピース
の表面硬度をバコール硬度計＃９３５で測定した。 （耐半田性の評価）表面実装用パッケージ（１２ピン、
４×５ｍｍ、厚み１．２ｍｍ、チップサイズは１．５ｍ
ｍ×２．０ｍｍ、リードフレームは４２アロイ製）を、
金型温度１７５℃、射出圧力６．８６ｘ１０6Ｐａ、硬
化時間２分でトランスファー成形し、１７５℃、８時間
で後硬化させた。得られた光半導体パッケージを、８５
℃、相対湿度８５％の環境下で、１６８時間放置し、そ
の後、２４０℃の半田槽に、１０秒間浸漬した。顕微鏡
でパッケージの外部クラックを観察し、クラック数
（（クラック発生パッケージ数）／（全パッケージ数）
×１００）を、％で表示した。また、チップと樹脂組成
物との剥離面積の割合を、超音波探傷装置により測定
し、剥離率（（剥離面積）／（チップ面積）×１００）
として、５個のパッケージの平均値を求め、％で表示し
た。(Measurement of Light Transmittance) A test piece of 10 × 30 × 1 mm was prepared, and a light transmittance of 400 nm was measured at a thickness of 1 mm using a spectrophotometer, Shimadzu UV-3100. The results are summarized in Table 1. (Measurement of Moisture Absorption Rate) A disk-shaped test piece having a diameter of 50 mm and a thickness of 3 mm was prepared and left in a high-temperature and high-humidity bath set at 85 ° C. and a humidity of 85%. It was measured. The results are summarized in Table 1. (Measurement of glass transition temperature) A test piece of 10 × 5 × 5 mm was prepared and measured by using TMA at a heating rate of 5 ° C./min, and measured. The temperature at which the elongation of the test piece rapidly changed was measured. And The results are summarized in Table 1. (Measurement of Bacol Hardness) Test pieces of 80 × 10 × 4 mm were prepared. Ten seconds after the mold was opened, the surface hardness of the test piece was measured with a Bacoal hardness tester # 935. (Evaluation of solder resistance) Surface mount package (12 pins,
4 × 5mm, thickness 1.2mm, chip size 1.5m
mx 2.0mm, lead frame made of 42 alloy),
Transfer molding was performed at a mold temperature of 175 ° C., an injection pressure of 6.86 × 10 6 Pa, and a curing time of 2 minutes, and post-curing was performed at 175 ° C. for 8 hours. 85 obtained optical semiconductor package
It was left for 168 hours in an environment of 85 ° C. and a relative humidity of 85%, and then immersed in a 240 ° C. solder bath for 10 seconds. Observe the external cracks of the package with a microscope, and determine the number of cracks ((number of packages with cracks) / (number of all packages)
× 100) was expressed in%. Further, the ratio of the peeled area between the chip and the resin composition was measured by an ultrasonic flaw detector, and the peeling rate ((peeled area) / (chip area) × 100)
The average value of the five packages was determined and expressed in%.
【００１９】[0019]
【表１】 [Table 1]
【００２０】[0020]
【表２】 [Table 2]
【００２１】(1)エポキシ当量２１０、軟化点７５℃のo
-クレゾールノボラックエポキシ樹脂 (2)エポキシ当量４７０、軟化点７０℃のビスフェノー
ルＡ型エポキシ樹脂 (3)水酸基当量１２０、軟化点５０℃のp-クレゾールノ
ボラック樹脂 (4)水酸基当量１１４のビスフェノールＡ (5) ２−（４−ヒドロキシフェニル）−２−［４−
［１，１−ビス（４−ヒドロキシフェニル）エチル］フ
ェニル］プロパン (6)水酸基当量１０３、軟化点９５℃のフェノールノボ
ラック樹脂 (7)水酸基当量１６７、軟化点７３℃のフェノールアラ
ルキル樹脂 (8)水酸基当量１５４のテトラヒドロフタル酸無水物(1) o having an epoxy equivalent of 210 and a softening point of 75 ° C.
-Cresol novolak epoxy resin (2) Bisphenol A type epoxy resin having an epoxy equivalent of 470 and a softening point of 70 ° C (3) p-cresol novolak resin having a hydroxyl equivalent of 120 and a softening point of 50 ° C (4) Bisphenol A having a hydroxyl equivalent of 114 (5 ) 2- (4-Hydroxyphenyl) -2- [4-
[1,1-bis (4-hydroxyphenyl) ethyl] phenyl] propane (6) Phenol novolak resin having a hydroxyl equivalent of 103 and a softening point of 95 ° C. (7) Phenol aralkyl resin having a hydroxyl equivalent of 167 and a softening point of 73 ° C. (8) Tetrahydrophthalic anhydride having a hydroxyl equivalent of 154
【００２２】[0022]
【発明の効果】本発明の光半導体封止用エポキシ樹脂組
成物は、透明性、耐半田性に優れており、これを用いる
ことにより、高い光特性と信頼性を有したオプトデバイ
スを得ることができる。The epoxy resin composition for encapsulating an optical semiconductor according to the present invention is excellent in transparency and soldering resistance. By using this, an optical device having high optical characteristics and reliability can be obtained. Can be.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） // Ｈ０１Ｌ 31/02 Ｈ０１Ｌ 31/02 Ｂ 33/00 Ｆターム(参考） 4J002 BC12X CC05X CD05W CD06W CD06X CD11W CD14W EU116 EU136 EW016 EW176 FD010 FD130 FD14X FD156 FD200 GQ05 4J036 AA01 AD07 AD08 AD21 AF06 AF07 AF08 AJ02 AJ18 DB05 DB06 DC40 DC41 DC46 DD07 FB07 FB08 GA04 JA07 4M109 AA01 BA01 CA21 EA02 EB03 EB04 EB07 EB09 EB12 EB18 EB19 EC05 EC11 EE12 GA01 5F041 AA44 DA44 5F088 BA11 JA06 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (reference) // H01L 31/02 H01L 31/02 B 33/00 F term (reference) 4J002 BC12X CC05X CD05W CD06W CD06X CD11W CD14W EU116 EU136 EW016 EW176 FD010 FD130 FD14X FD156 FD200 GQ05 4J036 AA01 AD07 AD08 AD21 AF06 AF07 AF08 AJ02 AJ18 DB05 DB06 DC40 DC41 DC46 DD07 FB07 FB08 GA04 JA07 4M109 AA01 BA01 CA21 EA02 EB03 EB03 EB03 EB03 EB03 EB03 EB04 BA11 JA06
Claims (2)
ル樹脂（Ｂ）、硬化促進剤（Ｃ）を必須成分とすること
を特徴とする光半導体封止用エポキシ樹脂組成物。1. An epoxy resin composition for encapsulating an optical semiconductor, comprising an epoxy resin (A), a para-substituted phenol resin (B) and a curing accelerator (C) as essential components.
クレゾールノボラック樹脂であることを特徴とする請求
項１記載の光半導体封止用エポキシ樹脂組成物。2. The epoxy resin composition for optical semiconductor encapsulation according to claim 1, wherein the para-substituted phenol resin (B) is a para-cresol novolak resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30465899A JP2001123045A (en) | 1999-10-26 | 1999-10-26 | Photosemiconductor sealing epoxy resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30465899A JP2001123045A (en) | 1999-10-26 | 1999-10-26 | Photosemiconductor sealing epoxy resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001123045A true JP2001123045A (en) | 2001-05-08 |
Family
ID=17935683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30465899A Pending JP2001123045A (en) | 1999-10-26 | 1999-10-26 | Photosemiconductor sealing epoxy resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001123045A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005053043A1 (en) * | 2003-11-25 | 2005-06-09 | Mediana Electronics Co., Ltd. | Manufacturing method for white light emitting diode device including two step cure process |
| JP2014116420A (en) * | 2012-12-07 | 2014-06-26 | Kaneka Corp | Semiconductor light-emitting device |
| WO2020080115A1 (en) * | 2018-10-15 | 2020-04-23 | パナソニックＩｐマネジメント株式会社 | Sealing resin composition and semiconductor package |
-
1999
- 1999-10-26 JP JP30465899A patent/JP2001123045A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005053043A1 (en) * | 2003-11-25 | 2005-06-09 | Mediana Electronics Co., Ltd. | Manufacturing method for white light emitting diode device including two step cure process |
| JP2014116420A (en) * | 2012-12-07 | 2014-06-26 | Kaneka Corp | Semiconductor light-emitting device |
| WO2020080115A1 (en) * | 2018-10-15 | 2020-04-23 | パナソニックＩｐマネジメント株式会社 | Sealing resin composition and semiconductor package |
| JP2020063338A (en) * | 2018-10-15 | 2020-04-23 | パナソニックＩｐマネジメント株式会社 | Resin composition for encapsulation and semiconductor package |
| JP7241311B2 (en) | 2018-10-15 | 2023-03-17 | パナソニックＩｐマネジメント株式会社 | Encapsulating resin composition and semiconductor package |
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