JP2001105305A - Head structure of substrate carrier in polishing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate carrier head structure of a polishing device, in which the substrate is easily held and which can provide a substrate which is excellent in surface-flatness. SOLUTION: The head structure is provided with a bowl-shaped core part 104 journalled to a hollow spindle shaft 105, a diaphragm 5 made of flexible material, which is horizontally fixed to the lower end part of the bowl-shaped core part, a rigid supporting plate 8 in which a gas passage 8a is provided vertically at the center part fixed to the diaphragm and which has a recessed part formed to be connected to the gas passage part of the undersurface, a means capable of supplying and discharging gas of the gas passage, a means for supplying gas to a pressurizing chamber 17 formed by the inside of the bowl-shaped core part and the upper face side of the diaphragm, a substrate carrier part 4 which is equipped with a flexible film 19 at the undersurface of the rigid supporting plate by the rigid supporting plate and the flexible film so that a highly air tight space with a clearance of 0.1 to 0.3 mm is formed by the rigid supporting plate and the flexible film, a circular holding ring which is projected from the undersurface of the flexible film to be installed to the lower outside peripheral edge of the rigid supporting plate, and a substrate accommodating pocket part formed by the side wall of the circular holding ring 22 and the undersurface of the flexible film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a head structure for carrying a substrate in an apparatus for polishing (including CMP polishing) the surface of a bare silicon wafer, a device wafer, a liquid crystal glass substrate, a magnetic head substrate and the like.

[0002]

2. Description of the Related Art A substrate held by a carrier head is pressed against the surface of a polishing cloth adhered to a platen supported on a rotating drive shaft from above the polishing cloth, and the substrate and the polishing cloth are rubbed to each other. Devices for polishing a surface are known and are in practical use.

[0003] As a method of holding a substrate on a carrier,
A method of fixing to the board mounting plate with an adhesive such as wax,
A method of vacuum-chucking a substrate by depressurizing a porous ceramics mounting plate. As shown in FIG. 4, a urethane foam 100 is adhered to a support plate 101, and this is retained.
It is surrounded by a nulling 102, and an airbag 103 is provided after the support plate.
Are independently provided, the substrate is attached to the film surface, the substrate is pressed against the polishing cloth 3a of the platen 3 supported by the rotating shaft 2, and the substrate and the polishing cloth are rubbed while controlling the pressure by the airbag. Backing film method of polishing the surface of the substrate by using a polishing method ("Journal of the Japan Society of Abrasive Processing" Vol.
43 No. 1 January 1999, pp. 24-27).

The method (1) requires an apparatus (Patent No. 2855177) for peeling the substrate from the carrier after the polishing is completed, and also requires an operation of removing the adhesive from the polished substrate and the mounting plate. It is no longer being used. The back side of the vacuum chuck substrate is used as a reference, and the chuck surface is rigid, so the surface of the porous ceramic must be extremely flattened, and there is a disadvantage that dust adheres between the chuck and the substrate. is there.

The backing film method is most often used for CMP polishing of a semiconductor device at present because it absorbs large undulations and uneven thickness of a substrate. At present, the depth of focus of optical lithography is required to be 0.15 to 0.18 μm due to the high integration of semiconductor devices, and the surface flatness of a polished substrate must also satisfy such a value.

Since the above-mentioned backing film method is not a static pressure method, it is difficult to obtain a completely uniform pressure, and the flatness cannot be imparted to a substrate. The above-mentioned "Journal of the Japan Society for Abrasive Processing" and JP-A-9-7075
No. 0 proposes that a direct airbag system in which an air chamber is provided between a porous ceramic mounting plate and a substrate is a means that can satisfy such flatness. However, this does not solve the problem that dust adheres between the chuck and the substrate.

As means for satisfying the above flatness, various substrate carrier head structures have been proposed (Japanese Patent Laid-Open No. Hei 6-1994).
No. 79618, No. 9-19863, No. 9-70750
No. 10-180626 and No. 11-48136). For example, JP-A-10-180626 discloses that
As a modification of the backing film method, a polishing apparatus shown in FIG. 5 is proposed. That is, the cylindrical housing 104 is supported by the hollow rotary shaft 105, and the support plate 101 is suspended from the ceiling of the inner surface of the housing 104 by the bellows-like assembly 106 to form the airbag chamber 103. Redispersible viscoelastic material 10 in bag 100a
0 is supplied and filled from a redispersible viscoelastic material supply pipe 107 provided in the hollow shaft 105, and a holding ring 102 provided to be vertically expandable and contractible and a flexible film provided on the lower surface of the support plate. The polishing apparatus is provided with a gas supply / discharge pipe 108 for forming a substrate storage pocket portion and supplying compressed air to the airbag chamber 103 or depressurizing the airbag chamber 103. In the figure, 109 is a redispersible viscoelastic material supply tank,
110 is a rotary joint.

In this polishing apparatus, a substrate polished by CMP by using a redispersible viscoelastic material has a considerably excellent flatness (3.0 to 3.2% at σ = 1). However, the use of the redispersible viscoelastic material complicates the structure of the apparatus. In addition, when polishing the substrate, the redispersible viscoelastic material supply port into the bag 100a must be closed.
The closing method is not described. In addition, since the pressure is also transmitted by redispersing the gel of the redispersible viscoelastic material, the method of instantaneously transmitting with a uniform pressure of the direct airbag method is not utilized.

Japanese Patent Application Laid-Open No. 9-198163 discloses an airbag chamber in which a bowl-shaped housing is supported on a hollow rotary shaft and a support plate is suspended from a ceiling on the inner surface of the housing by a bellows-like assembly as shown in FIG. And a substrate backing material having a recess formed on the lower surface and forming a recess (gap) with the substrate and having a sealing member made of an elastomer on the lower surface thereof is fixed to the lower surface of the support plate, and the center of the substrate backing material is formed. Means for supplying and discharging gas through a fluid passage provided in a vertical direction and communicating with the recess, a substrate storage pocket portion formed by a holding ring and a substrate backing material provided to be vertically expandable and contractible, Also, a substrate carrier head structure of a polishing apparatus provided with means for supplying compressed air to the air bag chamber is proposed.

In this polishing apparatus, the substrate is depressurized in the recessed portion so that the substrate backing material is made of an elastomeric sheet.
When the substrate is pressed against the polishing platen and is polished, the pressurized gas is supplied to the recess to directly follow the surface shape of the polishing platen. This carrier head structure has a disadvantage that the substrate is easily damaged because the backing member does not adhere to the substrate portion located at the recessed portion when the substrate is sucked and pressed.

[0011] Japanese Patent Application Laid-Open No. 6-79618 (EP54)
8846) discloses a bowl-shaped main body 10 supported on a hollow spindle shaft 105 by a coupler 111 as shown in FIG.
4. A diaphragm 112 made of a flexible material fixed horizontally to the lower end of the bowl-shaped main body, and an insert 113 fixed to the diaphragm and having a surface made of a microporous elastic sheet. Rigid support plate 100, retainer 102 fixed to the diaphragm, pressurizing chamber 10 formed by the inside of the bowl-shaped main body and the upper surface of the diaphragm
Means 108 for supplying gas to the substrate 3, a substrate storage pocket 114 formed by the side wall of the retainer 102 and the lower surface of the rigid support plate 100 covered with an insert, and fixedly provided on the central upper surface of the diaphragm. Flange ring 115 having an outwardly directed flange portion 115a, and the flange portion 115 provided above the bowl-shaped main portion.
A head structure of a substrate carrier in a polishing apparatus provided with a height position adjusting mechanism 116 capable of vertically moving a fixing disk 116a engaged with a fixing disc 116a is disclosed.

The head structure of the substrate carrier has the function of directly deforming and following the surface shape of the polishing platen because the substrate is backed by the rigid support plate 100 covered with an insert. It is inferior to that of the structure and slightly inferior in flatness of the substrate wafer polished by CMP (4.5 to 5.0% at σ = 1).

[0013]

SUMMARY OF THE INVENTION The present invention incorporates the advantages of each of the aforementioned substrate carrier head structures, combines them, further simplifies the structure, and provides a CMP polished substrate wafer with a flatness of σ = 1. It is an object of the present invention to provide a substrate carrier head structure capable of providing 2.8 to 3.2%.

[0014]

According to a first aspect of the present invention, a substrate held by a carrier is pressed from above a polishing cloth onto a surface of a polishing cloth adhered to a platen supported on a rotating drive shaft. A substrate carrier head structure of a polishing apparatus for polishing the surface of the substrate by rubbing the substrate and the polishing cloth, wherein the carrier head structure comprises a bowl-shaped main part supported by a hollow spindle shaft, and a bowl-shaped main part. A diaphragm made of a flexible material fixed horizontally at a lower end portion, a gas passage is provided vertically in a central portion fixed to the diaphragm, and has a concave portion formed to communicate with the gas passage portion on the lower surface. Rigid support plate, means for supplying and discharging gas from the gas passage, means for supplying gas to the pressurized chamber formed by the inside of the bowl-shaped main body and the upper surface side of the diaphragm, lower surface of the rigid support plate Flexible membrane Substrate carrier portion with flexible film attached so that a highly confidential space with a gap of 0.1 to 0.3 mm is formed between the rigid support plate and the flexible film, and the lower surface of the flexible film An annular holding ring protruding from the lower end of the rigid support plate and a substrate storage pocket formed by a side wall of the annular holding ring and a lower surface of the flexible film. It is another object of the present invention to provide a substrate carrier head structure in a polishing apparatus.

By reducing the pressure in the highly confidential space formed by the bottom of the rigid support plate and the flexible film, a negative pressure is created between the substrate and the flexible film, and the base is held by the flexible film. . Further, when the substrate is chucked and polished, the back surface of the substrate is always backed with a flexible film, so that the substrate is not damaged. Further, at the time of polishing, the flexible film expands like a balloon by the pressurized gas supplied to the gap (recess) formed by the rigid support plate and the flexible film, and adheres to the back surface of the substrate, and the flexible film becomes flexible. A gas chamber is formed between the back surface of the substrate and the lower surface of the rigid support plate, so that a uniform pressure corresponding to the undulation of the surface of the polishing pad on the surface plate is instantaneously transmitted to the substrate, The follow-up of the board to the board surface shape becomes easy, and a processed board having excellent flatness can be provided.

According to a second aspect of the present invention, in the substrate carrier head structure, the lower surface of the rigid support plate has an outer peripheral edge of the rigid support plate so that a flexible film and a highly airtight space are formed. Is higher than the center. A space for a gas passage is formed by the flexible membrane and the rigid support plate.

According to a third aspect of the present invention, the flexible film has a hardness of 10 to 100 and a tensile strength of 30 to 200 kgf /.
cm ² , tensile elongation 50-1000%, thickness 0.2-
It has physical properties of 3 mm and uses a rubber substance as a material. The rubber substance has the property of returning to its original state even when stretched, and has excellent spreadability by pressurized gas. In addition, the adhesion of the flexible film to the substrate is good.

According to a fourth aspect of the present invention, the rubber material of the flexible film is butyl rubber, chloroprene rubber, urethane rubber, silicon rubber, styrene / butadiene / styrene block copolymer rubber, chlorinated styrene / butadiene.・ Styrene block copolymer rubber, hydrogenated styrene / butadiene / styrene block copolymer rubber, hydrogenated chlorinated styrene / butadiene / styrene block copolymer rubber, styrene / isoprene / styrene block copolymer rubber , Chlorinated styrene / isoprene / styrene block copolymer rubber, hydrogenated styrene / isoprene / styrene block copolymer rubber, hydrogenated chlorinated styrene / isoprene / styrene block copolymer rubber, ethylene / propylene copolymer Polymer rubber and ethylene -Propylene-ethylidenenorbornene copolymer one selected from rubber or a mixture of two or more is used.

Since these are excellent in acid resistance, alkali resistance and spreadability, they are suitable as a material for a flexible film used for polishing a metal layer of CMP and polishing of a silicon bare wafer.

According to a fifth aspect of the present invention, a rubber material containing 1 to 15% by weight of a conductive filler is used as a material of the flexible film, and the flexible film has a surface resistivity of 1 × 10 ^13. Ω
/ □ or less. By setting the surface specific resistance of the flexible film to 1 × 10 ¹³ Ω / □ or less, adhesion of impurities to the flexible film is prevented. In particular, when ketchen black is used as the conductive filler, the elongation of the flexible film is improved, and the fit to the substrate is also improved,
Excellent conductivity.

According to a sixth aspect of the present invention, in the substrate carrier head structure, a flange ring having an outwardly directed flange portion is fixed to a central upper surface portion of the diaphragm, and the flange portion is provided above a bowl-shaped main portion. And a height position adjusting mechanism capable of vertically moving the fixing disk engaging with the fixing disk. The height position of the rigid support plate with respect to the annular holding ring can be adjusted by raising and lowering and engaging the fixing disk of the height position adjusting mechanism with the outward flange portion.

According to a seventh aspect of the present invention, in the carrier head structure, the annular retaining ring is made of a resin selected from poly (tetrafluoroethylene), poly (difluorodichloroethylene), polyacetal, and glass fiber reinforced epoxy resin. It is characterized by being a material. The annular retaining ring made of such a resin is excellent in slipperiness, and abrasion of the polishing pad of the surface plate is low, so that the life of the polishing pad of the surface plate is prolonged.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings.

FIG. 1 is a partially cutaway front view showing a main part of a substrate carrier head structure of a polishing apparatus, FIG. 2 is a bottom view of the substrate carrier head structure, and FIG. 3 is a bowl of the substrate carrier head structure. FIG. 4 is a partially cutaway sectional view used to explain the height relationship among a main body, an annular retaining ring, a rigid support plate, and a flexible film.

In the figure, 4 is the head structure of the substrate carrier in the polishing apparatus, 105 is a hollow spindle shaft, 104 is a bowl-shaped main part, and 105a is a coupler which supports the bowl-shaped main part below the spindle shaft. Reference numeral 5 denotes a diaphragm made of a flexible material. The diaphragm 5 is horizontally held at the lower end of the annular side wall 3a of the bowl-shaped main portion by an annular flange 6, and is tightened by bolts 7. Reference numeral 8 denotes a rigid support plate having a gas passage 8a provided in the center in a vertical direction, and a concave portion 8b formed to communicate with the gas passage on the lower surface. Reference numeral 9 denotes a flange ring having an outward flange portion 9a, which is fixed to a central upper surface of the diaphragm with a bolt 10. The rigid support plate 8 is also fixed to the lower surface of the diaphragm 8 by the bolt 10. The rigid support plate 8 is shown in FIG.
, But may be integrated.

Reference numeral 11 denotes a height position adjusting mechanism capable of moving the fixing disk 11a up and down in the vertical direction. The fixing disk 11a is provided at the lower end of a rod-shaped member 11b whose upper part is threaded. 1
Reference numeral 2 denotes an insert, which is provided above the bowl-shaped main part, and into which the rod-shaped member 11b is screwed. By raising the rod-shaped member 11b, the fixing disk 11a is engaged with the flange portion 9a. Reference numeral 16 denotes a gas supply / exhaust tube provided in the hollow spindle shaft 105. One end of this tube is connected to a tube having a vacuum / pressure gas switching valve (not shown), and the other end is a rigid support. It communicates with a gas passage 8a at the center of the plate via a joint 16a.

Reference numeral 17 denotes a pressurizing chamber formed between the inside of the bowl-shaped main body 104 and the upper surface of the diaphragm 5, and reference numeral 18 denotes a gas passage for supplying gas to the pressurizing chamber 17, as indicated by an arrow. A pressurized gas is supplied via the inside of 105. The supplied pressurized gas presses the upper surface of the diaphragm 5.

Reference numeral 19 denotes a flexible film having a thickness of 0.2 to 3 mm, which is fixed to the convex portion 8c on the outer peripheral edge of the lower surface of the rigid support plate 8 with a plurality of bolts 20. The height l of the gap between the lower surface recess 8d of the rigid support plate and the lower surface 8d is 0.1 to 0.3 m.
m, a highly confidential space 21 is formed. Reference numeral 22 denotes an annular holding ring, which protrudes from the lower surface of the flexible film 19 attached to the rigid support plate 8 and is attached to the lower outer peripheral edge of the rigid support plate. In FIG. 1, it is attached to the rigid support plate 8 with bolts 23 via an annular insert member 8e. Reference numeral 24 denotes a rubber seal ring.

Reference numeral 25 denotes a substrate storage pocket formed by the side wall of the annular holding ring 22 and the lower surface of the flexible film 19.

Examples of the material of the flexible film 19 include a rubber substance and a mixture of a rubber substance and a thermoplastic resin. Rubber materials include butyl rubber, chloroprene rubber, urethane rubber, silicone rubber, styrene / butadiene / styrene block copolymer rubber, chlorinated styrene / butadiene
Styrene block copolymer rubber, hydrogenated product of styrene / butadiene / styrene block copolymer rubber, hydrogenated product of chlorinated styrene / butadiene / styrene block copolymer rubber, styrene / isoprene / styrene block copolymer rubber, Chlorinated styrene / isoprene / styrene block copolymer rubber, styrene / isoprene /
Examples include hydrogenated styrene block copolymer rubber, hydrogenated chlorinated styrene / isoprene / styrene block copolymer rubber, ethylene / propylene copolymer rubber, and ethylene / propylene / ethylidene norbornene copolymer rubber. These may be crosslinked.

Examples of the thermoplastic resin include ethylene-vinyl acetate copolymer, low density polyethylene, linear linear polyethylene, soft polyvinyl chloride, chlorinated polyethylene, chlorosulfonated polyethylene, ethylene-acrylic acid copolymer, ethylene -Methyl acrylate copolymer, ethylene-ethyl acrylate copolymer, polypropylene, ethylene-propylene copolymer, ethylene-propylene-butene-1 copolymer, polybutene and the like.

In the case of a mixture, the rubber material is 10 to 10
97% by weight, preferably 30 to 85% by weight, and the thermoplastic resin is used in a proportion of 90 to 3% by weight, preferably 70 to 15% by weight. The rubber substance is used for the purpose of the extensibility of the flexible film and the return to the elongation, and the thermoplastic resin is used for the purpose of improving the strength, hardness and heat resistance of the flexible film.

The physical properties of the flexible film 19 include hardness (JI
SK-6301) is 10 to 100, preferably 35 to 100.
85, tensile strength (JIS K-6301) is 30 to 20
0 kgf / cm ² , preferably 50 to 150 kgf / c
m ² , tensile elongation (JIS K-6301) 50 to 10
00%, 200-800%, thickness 0.03-3mm,
Preferably, it is 0.05 to 1.5 mm.

The flexible membrane contains 1 to 15% by weight, preferably 3 to 10% by weight, of a conductive filler, and has a surface resistivity of the flexible membrane (Beckman Industrial:
Beckman Industrial)
Multimeter surface resistivity measurement device 4410) is 1 × 10 ¹³ Ω / □ or less, preferably 5 × 10 ¹² to
By setting it to 1 × 10 ⁹ Ω / □, adhesion of impurities to the flexible film is prevented. In particular, when conductive carbon black is used as the conductive filler instead of metal powder or metal oxide, the elongation of the flexible film is improved, and the fit to the substrate is also improved.

As the conductive carbon black, far carbon
Conductive fillers such as Nesgrac and Channel Black can also be used, but have a volatile content of 2% by weight or less, a surface area of 800-2000 m ² , a dibutyl phthalate absorption of 200-600 ml / 100 g, and an average particle size of 10-5.
Fine particles called ketchen black having a thickness of 0 nm are preferable because they have excellent conductivity, are excellent in dispersibility in rubber substances and resins, and improve the flexibility of the film as compared with other conductive fillers. Such carbon black is available from Deguss of Germany.
a) Available under the trade name PRINTEX XE from the company and under the trade name Ketchenblack from Mitsubishi Chemical Corporation.

Aluminum or stainless steel can be used as the material of the rigid support plate. The annular retaining ring 22 is made of a resin having a good slipperiness, such as poly (tetrafluoroethylene), poly (difluorodichloroethylene), polyacetal, and glass fiber reinforced epoxy resin. The thickness of the annular retaining ring shown in FIG. 1 is 0.3-2 mm. The coefficient of kinetic friction between the polishing cloth 3a of the surface plate and the annular retaining ring is 0.30.
The above is preferred.

The polishing of the substrate is performed as follows. The substrate carrier head 4 is moved onto the substrate w which has been conveyed to the temporary mounting table in advance, and the substrate carrier head 4 is lowered to abut on the substrate. The head 4 is pressed, the tube 16 is depressurized, and the flexible film 19 of the substrate carrier head 4 is brought into close contact with the rigid support plate 8. Fixing (holding) substrate to head 4
I do. Next, after moving the head 4 on which the substrate is fixed onto the surface plate 3, the head is lowered and the substrate is brought into contact with the polishing pad 3 a of the surface plate 3 which is supported by the spindle 2. The depressurization of the tube 16 of the substrate carrier head 4 is stopped, the pressure is switched to a pressurized gas, the flexible film 19 is expanded, the pressurized gas supplied to the pressurizing chamber 18 and the pressure applied to the expanded flexible film 19 are reduced. As a result, the substrate carrier head 4 presses the substrate onto the surface plate 3. The substrate and the polishing pad are rubbed by rotating the spindle shaft 105 of the head 4 holding the substrate w and the spindle shaft 2 of the surface plate 3 while supplying a pressurized gas to the pressurizing chamber 18 and the pipe 16. To polish the surface of the substrate. On this occasion,
The polishing is performed while the abrasive slurry is supplied to the surface of the polishing pad 3a. The rotation speed of the platen 3 is 10 to 150 rpm
m, the rotation speed of the substrate carrier head 4 is 10 to 150 rpm
m, the pressure at which the substrate held by the flexible film 19 of the carrier is applied to the polishing cloth is 0.05 to 0.3 kg / cm ² , preferably the gas pressure supplied to the pressurizing chamber 18 is 100 to 3
00g / cm ^2, the gas pressure applied to the flexible film 19 from the tube 16 is 100 to 200 g / cm ^2.

As the abrasive slurry, a slurry in which abrasive grains such as colloidal silica, cerium oxide, alumina, boehmite, and manganese dioxide are dispersed in pure water is used. If necessary, the slurry contains a surfactant, a chelating agent,
A pH adjuster, an oxidizing agent, and a preservative are blended. The abrasive slurry is supplied to the polishing cloth at a rate of 50 to 1500 cc / min.

When the substrate is polished, the substrate receives a pressure change due to irregular undulations on the surface of the polishing pad, but the pressurized gas existing in the space 21 between the flexible film 19 and the rigid support plate 8 on the back surface of the substrate. As a result, the pressure applied to each portion on the back surface of the substrate becomes uniform according to the principle of Pascal, so that the substrate can easily follow the undulation of the surface shape of the polishing pad.

After the polishing is completed, the supply of the pressurized gas to the pressurizing chamber 18 is stopped, and the spindle shaft 105 of the carrier head 4 is slightly raised from the polishing pad 3a. Since the flexible film 19 is expanded by air, the polished substrate w can be easily peeled off from the flexible film 19 of the carrier.

[0040]

According to the present invention, the substrate W can be easily mounted on the carrier head 4 and a processed substrate having excellent surface flatness can be obtained. Further, the use of the conductive flexible film 5 prevents polishing dust and impurities from adhering to the carrier.

[Brief description of the drawings]

FIG. 1 is a front view in which a part of a substrate carrier head is cut away.

FIG. 2 is a bottom view of the substrate carrier head.

FIG. 3 is an enlarged sectional view of a portion of a carrier head.

FIG. 4 is a sectional view showing a conventional substrate carrier method.

FIG. 5 is a partially cutaway sectional view showing a carrier head structure of a known polishing apparatus.

FIG. 6 is a partially cutaway sectional view showing a carrier head structure of a known polishing apparatus.

Claims (7)

[Claims] 1. A substrate held by a carrier is pressed from above a polishing cloth onto a surface of a polishing cloth attached to a surface plate supported on a rotating drive shaft, and the substrate and the polishing cloth are rubbed to each other. A substrate carrier head structure of a polishing apparatus for polishing a surface, wherein the carrier head structure is a bowl-shaped main body supported on a hollow spindle shaft, and a flexible horizontally fixed to a lower end of the bowl-shaped main body. Diaphragm made of wood,
A gas passage is provided in a vertical direction in a central portion fixed to the diaphragm, a rigid support plate having a concave portion formed to communicate with the gas passage portion on the lower surface, means for supplying and discharging gas from the gas passage, a bowl Means for supplying gas to a pressurizing chamber formed between the inside of the main body and the upper surface of the diaphragm, and a flexible film provided on the lower surface of the rigid support plate by the rigid support plate and the flexible film. A substrate carrier portion on which a flexible film is attached so as to form a highly confidential space with a gap of 0.1 to 0.3 mm, a lower portion of the rigid support plate protruding from a lower surface of the flexible film; A substrate carrier in a polishing apparatus, comprising: an annular holding ring attached to an outer peripheral edge; and a substrate storage pocket portion formed by a side wall of the annular holding ring and a lower surface of the flexible film. Head structure. 2. The lower surface of the rigid support plate is characterized in that the height of the outer peripheral edge of the rigid support plate is higher than the central portion so that a space with high airtightness and a flexible film are formed. , Claim 1
A head structure of a substrate carrier in the polishing apparatus according to 1. 3. The flexible film has a hardness of 10 to 100, a tensile strength of 30 to 200 kgf / cm ² , and a tensile elongation of 50 to ²⁰⁰ .
The head structure of a substrate carrier in a polishing apparatus according to claim 1, wherein the substrate carrier has physical properties of 1000% and a thickness of 0.2 to 3 mm and is made of a rubber material. 4. The rubber material of the material of the flexible membrane is butyl rubber, chloroprene rubber, urethane rubber, silicon rubber,
Styrene / butadiene / styrene block copolymer rubber, chlorinated styrene / butadiene / styrene block copolymer rubber, hydrogenated styrene / butadiene / styrene block copolymer rubber, chlorinated styrene / butadiene / styrene block copolymer Hydrogenated rubber,
Styrene / isoprene / styrene block copolymer rubber, chlorinated styrene / isoprene / styrene block copolymer rubber, hydrogenated styrene / isoprene / styrene block copolymer rubber, chlorinated styrene / isoprene / styrene block copolymer Hydrogenated rubber,
4. The substrate carrier head structure in the polishing apparatus according to claim 3, wherein the substrate carrier head is one or a mixture of two or more selected from ethylene / propylene copolymer rubber and ethylene / propylene / ethylidene norbornene copolymer rubber. 5. The rubber material of the flexible film contains 1 to 15% by weight of a conductive filler, and the flexible film has a surface specific resistance of 1 × 10 ¹³ Ω / □ or less. A substrate carrier head structure in the polishing apparatus according to claim 3. 6. A flange ring having an outward flange portion is fixed to a central upper surface portion of the diaphragm, and a fixing disk engaging with the flange portion is vertically moved above and below the bowl-shaped main portion in a vertical direction. The substrate carrier head structure in the polishing apparatus according to claim 1, wherein a possible height position adjusting mechanism is provided. 7. The annular retaining ring according to claim 1, wherein the ring is made of a resin selected from the group consisting of poly (tetrafluoroethylene), poly (difluorodichloroethylene), polyacetal and glass fiber reinforced epoxy resin. A substrate carrier head structure in the polishing apparatus described in the above.