JP2001093829A - Substrate heat treatment system and method of temperature control - Google Patents

Abstract

PROBLEM TO BE SOLVED: To quickly provide a substrate heat treatment system and a temperature control method in the substrate heat treatment system for changing the temperature of a heating plate, and quickly changing the temperature of the heating plate, while in-plane uniformity in temperature of the heating plate is kept adequate. SOLUTION: A heater 52 for heating a heating plate 51 is embedded in the heating plate 51 for carrying out a baking treatment of a wafer (W). At the same time, cooling medium paths 56 and 57 for cooling the heating plate 51 by using a cooling medium flowing through the inside are formed in the heating plate 51. When the setting temperature of the heating plate 51 is to be reduced, the cooling medium is fed to the cooling medium paths 56 and 57. After the heating plate 51 is once lowered to a temperature lower than the temperature set, the heating plate 51 is heated by the heater 52 to the temperature set.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a substrate heating apparatus and a temperature control method for performing a heating process such as a baking process on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a photolithography process of a semiconductor device, a resist is applied to a semiconductor wafer, a resist film formed by the resist is exposed according to a predetermined circuit pattern, and the exposed pattern is developed to develop a resist. A circuit pattern is formed on the film.

Conventionally, a resist coating and developing system has been used to carry out such a series of steps. The resist coating and developing system includes a cassette station in which a cassette containing semiconductor wafers is carried in and a semiconductor wafer (hereinafter simply referred to as a wafer) is unloaded one by one from the cassette, and various processing for coating and developing the wafers. And an interface unit for transferring a wafer between an exposure apparatus that performs exposure processing on the wafer and a processing station in which various processing units for performing the processing are arranged.

In such a resist coating and developing system, in a cassette station, wafers are taken out one by one from a cassette and transported to a processing station, and then subjected to a hydrophobic treatment in an adhesion processing unit. A resist solution is applied to form a resist film. Next, the wafer is subjected to a pre-bake process in a heat treatment unit.

[0005] Thereafter, the wafer is transferred from the processing station to the exposure apparatus via the interface unit, where a predetermined pattern is exposed by the exposure apparatus. After the exposure, the wafer is returned to the processing station via the interface unit. Conveyed. After the exposed wafer is subjected to post-exposure bake processing, a developing solution is applied in a developing unit to develop a predetermined pattern, and thereafter, post-bake processing is performed. After this series of processing is completed, the wafer is transferred to a cassette station and stored in a wafer cassette.

In such a series of resist coating and developing processes, the above-described pre-bake, post-exposure bake, and post-bake processes involve placing a wafer close to or placed on a heating plate in a heating unit. It is made by.

[0007] The baking temperature of such a heating plate varies depending on the type of resist solution, the type of processing, and the like. Conventionally, the temperature of the heating plate is set to various temperatures so as to be able to cope with these. The heat treatment unit is prepared to perform the treatment.

[0008]

However, since it is extremely complicated to prepare heating plates set at various temperatures as described above, there is a demand to reduce the number of heating plates as much as possible. Therefore, it is conceivable that one heating plate is used by changing the temperature so that various set temperatures can be handled. However, the conventional heating plate has a problem that it has to be cooled when the temperature is lowered from a high temperature to a low temperature, and it takes a long time to reach a desired temperature. Also, the heating plate is required to have extremely high in-plane uniformity of the temperature so that the entire surface of the wafer can be baked at a uniform temperature, while maintaining the in-plane uniformity of the heating plate.
It is very difficult to lower the temperature to a predetermined temperature.

The present invention has been made in view of such circumstances, and has as its object to provide a substrate heating apparatus capable of rapidly changing the temperature of a heating plate.
It is also an object of the present invention to provide a substrate heating apparatus capable of rapidly changing the temperature of a heating plate while maintaining good in-plane uniformity of the temperature of the heating plate, and a temperature control method in such a substrate heating apparatus. Aim.

[0010]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a substrate heat treatment apparatus for performing a heat treatment on a substrate. A heating plate for applying heat, a heater embedded in the heating plate to raise the temperature of the heating plate, a cooling unit for lowering the temperature of the heating plate, and controlling the heater and the cooling unit to control the temperature of the heating plate. And a controller for controlling the temperature of the substrate to a set temperature.

According to such a configuration, since the heating plate is cooled by the cooling means, especially when the set temperature of the heating temperature is lowered, the temperature of the heating plate is extremely rapidly increased by the cooling means. Can be reached.

[0012] The present invention is also a substrate heat treatment apparatus for performing heat treatment on a substrate, the heating plate being provided with a substrate close to or placed thereon to perform heat treatment on the substrate, and embedded in the heating plate. A heater for raising the temperature of the heating plate, a cooling medium passage formed in the heating plate, through which a cooling medium for flowing the cooling plate for lowering the temperature of the heating plate flows, and cooling for supplying a cooling medium to the cooling medium passage. A substrate heating apparatus includes: a medium supply unit; and a control unit that controls the heater and the cooling medium supply unit to control the temperature of the heating plate to a set temperature.

According to such a configuration, since the cooling medium path is formed in the heating plate and the cooling medium is supplied to the cooling medium path by the cooling medium supply means, especially when the set temperature of the heating temperature is lowered. In addition, the cooling medium allows the temperature of the heating plate to reach the set temperature very quickly.

[0014] The cooling medium path may have at least one cooling medium path pattern formed in a plane parallel to the surface of the heating plate. In this case, the cooling medium path pattern of the cooling medium path can be arranged on the substrate side of the heater and on the side opposite to the substrate of the heater. Thus, since both sides of the heater can be cooled, the temperature controllability at the time of temperature decrease can be improved.

The cooling medium passage pattern has a cooling medium inlet and an outlet, the inlet and the outlet are provided in close proximity to each other, and at least a part of the inlet side portion of the cooling medium passage and the outlet side portion are provided. It is preferable that at least a part of the cooling medium path is close to the cooling medium path, and the cooling medium path is bent. As a result, the outlet side portion where the temperature of the cooling medium is high and the inlet side portion where the temperature of the cooling medium is low are canceled in terms of temperature, and the in-plane uniformity of the heating plate temperature is improved. Since the temperature can be increased, a rapid temperature drop can be realized. Further, by forming the cooling medium path pattern point-symmetrically, the in-plane uniformity of the heating temperature can be further improved.

Further, the cooling medium path pattern may include a plurality of divided paths, and each divided path may have a cooling medium inlet and an outlet. Thereby, the flow time of the cooling medium can be shortened, and a rise in the temperature of the cooling medium can be suppressed, so that the temperature of the heating plate can be more quickly lowered.

The cooling medium supply means includes a cooling medium supply pipe for supplying a liquid cooling medium to the cooling medium path, a purge gas pipe for supplying a purge gas to the cooling medium path,
A switching valve for switching any one of these to the cooling medium path, wherein the control means switches the switching valve after the liquid cooling medium flows through the cooling medium path to pass the purge gas. It can be made to flow. As described above, after the temperature is decreased by the liquid cooling medium, the purge gas is caused to flow through the cooling medium path, so that the liquid cooling medium can be discharged from the cooling medium path and wiped off. The in-plane uniformity of the temperature can be favorably maintained.

The present invention further relates to a substrate heat treatment apparatus for performing a heat treatment on a substrate, the heating plate having a substrate placed close to or placed on the substrate to heat the substrate, and a heating plate embedded in the heating plate. A heater for raising the temperature of the heating plate, a cooling medium passage formed in the heating plate, through which a cooling medium for flowing the cooling plate for lowering the temperature of the heating plate flows, and cooling for supplying a cooling medium to the cooling medium passage. Medium supply means, and control means for controlling the heater and the cooling medium supply means to control the temperature of the heating plate to a predetermined set temperature, wherein the control means sets the set temperature to a first set temperature. When changing from the set temperature to the second set temperature, the set temperature is changed to the second set temperature immediately after the substrate heating process at the first set temperature is completed. Providing a substrate heating apparatus that.

With this configuration, the temperature of the heating plate is changed to the second temperature immediately after the processing of the substrate heated at the first temperature is completed. The temperature can be quickly changed to the second set temperature, and the substrate can be efficiently heated.

The present invention further provides a heating plate for heating the substrate by placing the substrate close to or on the substrate, a heater embedded in the heating plate to raise the temperature of the heating plate, A plurality of substrate heating units having a cooling medium passage formed therein and through which a cooling medium for lowering the temperature of the heating plate flows, and cooling the cooling medium passages of each of the plurality of substrate heating units. A cooling medium supply unit that supplies a medium, and a heater and the cooling medium supply unit of each of the plurality of substrate heating processing units are controlled to control a temperature of each heating plate of the plurality of substrate heating processing units. Control means for controlling the temperature of each of the heating plates from a first set temperature to a second set temperature. When cooled, the controls the coolant supply unit, to provide a substrate heating apparatus and providing a time difference in time to start the supply of the respective cooling medium passage to the cooling medium.

With this configuration, when each of the heating plates of the plurality of substrate heating units provided in the substrate heating apparatus is cooled from the first set temperature to the second set temperature, the cooling medium supply means is provided. Insufficient supply of cooling medium can be prevented.

According to the present invention, there is further provided a heating plate for performing a heat treatment on a substrate by bringing the substrate close to or on the substrate, a heater embedded in the heating plate for raising the temperature of the heating plate, The substrate heating processing apparatus further includes a cooling medium path formed therein, through which a cooling medium for lowering the temperature of the heating plate flows, and cooling medium supply means for supplying a cooling medium to the cooling medium path. A temperature control method for controlling the temperature of, when lowering the temperature of the heating plate to a predetermined set temperature, controlling the cooling medium supply means, supplying a cooling medium to the cooling medium path, It is characterized in that the temperature of the heating plate is lowered to a set temperature or lower, and then the heater is operated to raise the temperature of the heating plate to a predetermined set temperature. To provide a temperature control method of a.

With this configuration, after the temperature of the heating plate is lowered by the cooling medium, the heater is operated to finely adjust the temperature, so that the temperature of the heating plate can be quickly changed to a new set temperature. Good in-plane uniformity of temperature can be maintained.

The present invention further provides a heating plate for performing a heating process on a substrate by placing the substrate close to or on the substrate, a heater embedded in the heating plate for raising the temperature of the heating plate, The substrate heating processing apparatus further includes a cooling medium path formed therein, through which a cooling medium for lowering the temperature of the heating plate flows, and cooling medium supply means for supplying a cooling medium to the cooling medium path. A temperature control method for controlling the temperature of the heating plate, when cooling the temperature of the heating plate to a predetermined set temperature, based on the temperature of the heating plate and the set temperature, stop the cooling medium higher than the set temperature Setting a temperature, controlling the cooling medium supply means to supply a cooling medium to the cooling medium path, and lowering the temperature of the heating plate to a cooling medium stop temperature; When the, to provide a temperature control method characterized by stopping the supply of the cooling medium.

According to such a configuration, when the temperature of the heating plate is lowered by the cooling medium, it is possible to prevent the temperature from being excessively lower than the set temperature, and the temperature of the heating plate is quickly changed to a new set temperature. be able to.

When the heating plate is heated to a set temperature, it is preferable to operate the heater with the cooling medium supply means stopped. Thereby, the temperature of the heating plate can be quickly raised.

When the temperature of the heating plate rises above a set temperature, the cooling medium supply means is controlled to
A cooling medium may be supplied to the cooling medium path. Thereby, it is possible to prevent the temperature of the heating plate from overshooting at the time of raising the temperature, and it is possible to more quickly set the heating plate temperature to the predetermined value.

As described above, after the temperature is lowered by the cooling medium of the liquid, the purge gas is flown into the cooling medium path, whereby the liquid cooling medium can be discharged from the cooling medium path and wiped off. In addition, the in-plane uniformity of the temperature of the heating plate can be favorably maintained.

In this case, specifically, when the supply of the purge gas is stopped, the temperature of the heating plate is higher than a set temperature, and the value obtained by differentiating the temperature of the heating plate with time is positive. Until the temperature of the heating plate drops from a set temperature to a temperature lower than a predetermined temperature lower than the temperature, a purge gas is supplied to the cooling medium path,
By starting the control of the heater, the temperature of the heating plate can be controlled to a predetermined set temperature.

Further, after the supply of the purge gas is stopped, if the temperature of the heating plate is not higher than a set temperature or a value obtained by differentiating the temperature of the heating plate with respect to time is not positive, the heating plate When the temperature does not rise during a predetermined time, or when the state in which the differential value is not positive continues for a predetermined time or more, the control of the heater is started, and the temperature of the heating plate is set to a predetermined set temperature. Can be controlled.

[0031]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing a resist coating / developing processing system used for carrying out the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.

This resist coating / developing system 1
Is a cassette station 10 which is a transfer station.
And a processing station 11 having a plurality of processing units
And an interface unit 12 for transferring a wafer W between an exposure apparatus (not shown) provided adjacent to the processing station 11.

The cassette station 10 carries a plurality of wafers W as objects to be processed, for example, in units of 25 wafers, into a wafer cassette CR, and loads the wafers W from another system into or out of this system. Or the wafer cassette CR and the processing station 1
This is for transferring the wafer W to and from the wafer W.

In the cassette station 10, as shown in FIG.
A plurality of (four in the figure) positioning projections 20a along the direction
The wafer cassette CR can be placed at a position of the projection 20a in a line with the respective wafer entrances facing the processing station 11 side. In the wafer cassette CR, the wafers W are arranged in a vertical direction (Z direction). Also, the cassette station 10
A wafer transfer mechanism 21 is provided between the cassette mounting table 20 and the processing station 11. The wafer transfer mechanism 21 has a wafer transfer arm 21a movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers W therein. Any wafer cassette CR
Can be selectively accessed. Further, the wafer transfer arm 21a is configured to be rotatable in the θ direction, and has access to an alignment unit (ALIM) and an extension unit (EXT) belonging to a _third processing unit G3 on the processing station 11 side described later. I can do it.

The processing station 11 is provided with a plurality of processing units for performing a series of steps for performing a coating / phenomenon on the wafer W, and these are arranged at predetermined positions in multiple stages. The wafers W are processed one by one. As shown in FIG. 1, the processing station 11 has a transfer path 22a at the center thereof, a main wafer transfer mechanism 22 provided therein, and all the processing units arranged around the wafer transfer path 22a. I have. The plurality of processing units are divided into a plurality of processing units, and each processing unit includes a plurality of processing units arranged in multiple stages along a vertical direction.

As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a cylindrical support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is rotatable by the rotational driving force of a motor (not shown), and accordingly, the wafer transfer device 4
6 is also rotatable integrally.

The wafer transfer device 46 includes a plurality of holding members 48 which are movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48. .

Further, as shown in FIG.
, Four processing units G₁, G ₂, G₃, G₄But
It is actually arranged around the EHA transport path 22a,
Part G ₅Can be arranged as needed.

Of these, the first and second processing units G
₁ and G ₂ are arranged in parallel on the front side of the system (front side in FIG. 1), the third processing unit G ₃ is arranged adjacent to the cassette station 10, and the fourth processing unit G ₄ is connected to the interface unit 12. They are located adjacent to each other. In addition, the fifth
The processing unit G ₅ of which is capable disposed on the rear portion.

[0040] In this case, as shown in FIG. 2, the first processing unit G _1, 2 single spinner by placing the wafer W on the spin chuck (not shown) performs a predetermined process in a cup CP In the present embodiment, a resist coating unit (COT) for applying a resist to the wafer W and a developing unit (DEV) for developing a resist pattern are arranged in two stages from the bottom in this embodiment. Is overlaid. Similarly, the second processing section G _2, a resist coating unit as two spinner-type processing units (CO
T) and the developing unit (DEV) are stacked in two stages from the bottom.

As described above, the resist coating unit (CO
The reason for disposing T) and the like on the lower side is that the waste liquid of the resist solution is inherently more complicated than the waste liquid of the developer both mechanically and in terms of maintenance, and thus the coating unit (COT)
This is because the complexity is alleviated by arranging the elements in the lower stage. However, if necessary, a resist coating unit (COT) and the like can be arranged in the upper stage.

[0042] In the third processing unit G ₃ are, as shown in FIG. 3, the oven-type processing units for performing predetermined processing put on the mounting table of the wafer W SP (FIG. 1) are multi-tiered . That is, a cooling unit (COL) for performing a cooling process, an adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of a resist, an alignment unit (ALIM) for performing positioning, and carrying in and out of the wafer W. Extension unit (EX
T), four heating processing units (HP) for performing heating processing on the wafer W before and after the exposure processing and after the development processing are stacked in eight stages in order from the bottom. In addition,
A cooling unit (COL) is provided instead of the alignment unit (ALIM), and the cooling unit (C
OL) may have an alignment function.

[0043] The fourth processing unit G ₄ also, the oven-type processing units are multi-tiered. That is, a cooling unit (COL), an extension cooling unit (EXTCOL) which is a wafer loading / unloading section provided with a cooling plate, and an extension unit (EX
T), a cooling unit (COL), and four heat treatment units (HP) are stacked in eight stages from the bottom.

By arranging the cooling unit (COL) and the extension cooling unit (EXTCOL) having a low processing temperature in the lower stage and the heating processing unit (HP) having a high processing temperature in the upper stage as described above, Thermal interference can be reduced. Of course, a random multi-stage arrangement may be used.

[0045] As described above, can be provided a fifth processing unit G ₅ on the rear side of the main wafer transfer mechanism 22, in the case of providing a processing unit G ₅ of the fifth, along the guide rails 25 It can be moved laterally when viewed from the main wafer transfer mechanism 22. Therefore, even in the case where the processing section G ₅ of the fifth, which the space portion is secured by sliding along the guide rail 25, maintenance work from behind the main wafer transfer mechanism 22 easily It can be carried out. In this case, the space is not limited to such a linear movement, and a space can be similarly secured by rotating the rotation. Incidentally, those As the fifth processing unit G _5, which has basically the same as the third and fourth processing section G _3, G _4, oven-type processing units are stacked in multiple stages structure Can be used.

The interface section 12 has the same length as the processing station 11 in the depth direction (X direction). As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is provided at the center. The wafer transfer mechanism 24 has a wafer transfer arm 24a, and the wafer transfer arm 24a
By moving in the Z direction, both cassettes CR and BR and the peripheral exposure device 23 can be accessed. Further, the wafer transfer arm 24a is rotatable in θ direction, the fourth processing unit G extension unit (EXT) and belonging to the _4, further wafer delivery of the adjacent exposure device side stand of the process station 11 ( (Not shown) can also be accessed.

In such a resist coating / developing processing system, first, in the cassette station 10, the wafer transfer arm 21 a of the wafer transfer mechanism 21 is used to store the unprocessed wafer W on the cassette mounting table 20. Accessing the cassette CR, the cassette C
Taking out one wafer W from R, it is transported to the third processing section _{G 3} of the extension unit (EXT).

The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22.
Then, the alignment unit (A) of the _third processing unit G3
After alignment by LIM), the wafer is transported to an adhesion processing unit (AD), where a hydrophobizing process (HMDS process) for improving the fixability of the resist is performed. Since this process involves heating, the wafer W is then
The cooling unit (CO)
L) and cooled.

When the adhesion processing is completed, the cooling
The wafer W cooled by the unit (COL) is continuously
A resist coating unit (CO
T), where a coating film is formed. Coating treatment
After the completion, the wafer W is transferred to the processing unit G. ₃, G₄Any of the heating
Pre-baked in the processing unit (HP), then
Cooled by one of the cooling units (COL)
You.

The cooled wafer W is supplied to the third processing unit G ₃
Is conveyed to the alignment unit (ALIM), where it is aligned, it is conveyed to the interface section 12 via the fourth processing unit group G ₄ of the extension units (EXT).

In the interface section 12, after peripheral exposure is performed by the peripheral exposure device 23 to remove excess resist, the wafer W is exposed in accordance with a predetermined pattern by an exposure device (not shown) provided adjacent to the interface section 12. Is subjected to an exposure process.

[0052] wafer W after exposure is returned again to the interface section 12 by the wafer transport mechanism 24, an extension unit included in the fourth processing unit _{G 4} (EX
T). Then, the wafer W is transferred to any one of the heat treatment units (HP) by the wafer transfer device 46, subjected to post-exposure bake processing, and then cooled by the cooling unit (COL).

Thereafter, the wafer W is transferred to the developing unit (DE
V), where the exposure pattern is developed. After the development is completed, the wafer W is transferred to any one of the heat processing units (HP) and subjected to post-baking processing, and then cooled by the cooling unit (COL). After such a series of processing is completed, and returned to the cassette station 10 through the third processing unit group G ₃ of the extension unit (EXT), is inserted into one of the wafer cassettes CR.

Next, the heat processing unit (HP) according to the present embodiment will be described. FIG. 4 is a schematic diagram of a heat treatment unit (HP) and a control system according to the embodiment of the present invention. FIG. 5 is a schematic diagram of the heat treatment unit (H) shown in FIG.
FIG. 6 is a plan view of a cooling medium path mounted in the face plate of FIG. 4), and FIG. 6 is a plan view of a cooling medium path mounted in the cooling plate of the heat treatment unit shown in FIG.

A heating plate 51 having a heater 52 is disposed in a processing chamber (not shown) of the heat processing unit (HP). On this heating plate 51, three lift pins 53 are arranged so as to be able to move up and down freely, whereby the wafer W carried into a processing chamber (not shown) is lifted by the lift pins 53.
, And is baked in the vicinity of the heating plate 51, and then placed and carried out by the lift pins 53. Heater 5
As 2, a mica heater, a pipe heater (seed heater), a screen printing heater, or the like can be used.

The heating plate 51 is disposed on the wafer W side and has a face plate 54 in which a heater 52 is embedded.
And a cooling plate 55 arranged on the opposite side of the wafer W. Inside the face plate 54, an upper cooling medium passage 56 for lowering the temperature of the heating plate 51 by a cooling medium circulating therein is embedded,
In the cooling plate 55, a lower cooling medium path 57 for lowering the temperature of the heating plate 51 by a cooling medium circulating therein is embedded. That is, the pair of upper cooling medium passages 56 and lower cooling medium passages 57 are arranged so as to sandwich the heater 52 therebetween. Each of the upper cooling medium path 56 and the lower cooling medium path 57 has a planar pattern.

The upper cooling medium path 56 is composed of two divided paths 56a and 56b, as shown in FIG. The cooling medium inlet 58a and the outlet 5
9a, and the cooling medium inlet 58b and outlet 59b of the dividing path 56b are arranged close to each other. Further, a part of the outward path (portion side portion) of the cooling medium and a part of the return path (portion side portion) of each of the divided paths 56a and 56b are arranged close to each other. As described above, the relatively low-temperature cooling medium at the inlet 58 and the outward path (inlet side portion) and the relatively high-temperature cooling medium at the outlet 59 and the return path (exit side portion) are close to each other. Since the temperature difference is canceled, the temperature difference of the cooling medium can be reduced as much as possible, and the in-plane uniformity of the temperature of the heating plate 51 can be favorably maintained. Further, the upper cooling medium path 56 is bent, and the cooling medium path pattern is arranged point-symmetrically. Since the upper cooling medium passage 56 is bent in this manner, the cooling medium flow area can be increased, so that a rapid temperature decrease can be realized. By forming the cooling medium passage pattern in a point symmetric manner, The in-plane uniformity of the heating temperature can be further improved.

The lower cooling medium passage 57 also comprises two divided passages 57a and 57b, as shown in FIG.
The cooling medium inlet 58c and the outlet 59c of the dividing path 57a, and the cooling medium inlet 58d of the dividing path 57b
And the outlet 59d are arranged close to each other.
Further, a part of the outward path (portion side portion) of the cooling medium and a part of the return path (portion side portion) of each of the divided paths 57a and 57b are arranged close to each other. Further, the lower cooling medium path 57 is also bent, and the cooling medium path pattern is disposed point-symmetrically with the upper cooling medium path 56 being shifted by 45 degrees.
Since the lower cooling medium passage 57 also has various features similar to those of the upper cooling medium passage 56, the temperature of the heating plate 51 can be rapidly lowered while maintaining the in-plane uniformity of the temperature of the heating plate 51.

As shown in FIG. 4, the cooling medium passages 56 and 57
A supply pipe 60 for supplying a liquid cooling medium (for example, pure water or city water) and a purge gas (for example, air,
Supply pipe 61 for supplying nitrogen gas),
The two supply pipes 60 and 61 are provided with switching valves 62 and 63, respectively, which are air operation valves. The cooling medium circulated through the cooling medium paths 56 and 57 is discharged to the drain 64 via a tank (not shown) or the like.

After the purge gas has been cooled by the liquid cooling medium, the liquid cooling medium is discharged from the cooling medium path to be purged,
Thus, after the temperature of the heating plate 51 is set, the heating plate 51 has a function of maintaining the in-plane uniformity of the temperature, but also functions as a cooling medium.

The face plate 54 of the heating plate 51
Are provided with a plurality of temperature sensors 65 such as thermocouples. The reason why the number of the temperature sensors 65 is plural is to monitor the variation in the temperature of the face plate 54 and improve the in-plane uniformity.

Further, in response to a command from the system controller 80 of the resist coating / developing processing system, a unit controller 66 for controlling the heating processing unit (HP) and an output of the heater 52 to control the temperature of the heating plate 51 Is provided. The temperature controller 67 receives a command from the unit controller 66 and a detection signal from the temperature sensor 65, outputs a control signal to a power source 69 of the heater 52, and performs temperature control by PID control. Further, a control signal is sent from the unit controller 66 to the solenoid valve 68 to control the switching of the switching valves 62 and 63 and the amount of the cooling medium supplied to the cooling medium passages 56 and 57 to control the temperature when the temperature is lowered. It is supposed to do.

Next, with reference to FIGS. 7 and 8, a description will be given of the control in the case where the set temperature of the heating plate is lowered and the temperature is lowered to a new set temperature. FIG. 7 is a graph showing an example of the relationship between the heating plate and the elapsed time, and FIG. 8 is a flowchart of temperature control when the set temperature of the heating plate is lowered.

In the example shown in FIG. 7, when the set temperature of the heating plate 51 is decreased, cooling water, which is a liquid cooling medium, is supplied to the cooling medium passages 56 and 57, and After the temperature is lowered, air as a purge gas is supplied to the cooling medium passages 56 and 57 to temporarily lower the temperature of the heating plate 51 to a set temperature or lower, and thereafter, the heater 52 raises the temperature to the set temperature.
Thus, the temperature of the heating plate is rapidly lowered to a new set temperature while maintaining the in-plane uniformity of the temperature of the heating plate.

Specifically, as shown in the flowchart of FIG. 8, when the unit controller 66 receives a command to lower the set temperature from the system controller 80 of the coating / developing system, the temperature lowering operation is started (STEP 1).
00), the control of the heater 52 is stopped (STEP 1).
01).

Then, the set temperature for cooling is defined (S
(TEP102), and the current temperature of the heating plate 51 is detected and read by the temperature sensor 65 (S102).
TEP103).

Further, the temperature change width is calculated from the current heating plate 51 and the set temperature to be cooled, and the cooling water OFF temperature (as shown in FIG. The temperature change width is compared with the cooling water OFF temperature (STEP 104).

If the temperature difference at which the temperature falls is relatively large and the temperature change width is greater than the cooling water OFF temperature, the cooling medium path 5
The supply of cooling water to the cooling water 6 and 57 is started (STEP 10).
5). The temperature of the heating plate 51 is detected and read by the temperature sensor 65 (STEP 106), and it is determined whether or not the temperature of the heating plate 51 has dropped below the cooling water OFF temperature (STEP 107).
When the temperature is lowered to the F temperature or lower, the supply of the cooling water is stopped (STEP 108).

In the above-described STEP 104, if the temperature difference at which the temperature falls is relatively small and the temperature change width is not greater than the cooling water OFF temperature (that is, the temperature change width ≦ the cooling water OFF temperature), the flow time of the cooling water is calculated. (STEP10
9) The cooling water is supplied to the cooling medium passages 56 and 5 only during this water flow time.
After the water supply time is over, the supply of the cooling water is stopped (STEP 110).

After finishing the cooling by the cooling water,
Air is supplied to the cooling medium paths 56 and 57 for a designated time (purge time) as shown in FIG.
TEP111).

After the completion of the air purging, the temperature of the heating plate 51 is detected and read by the temperature sensor 65 (STEP 112), and the temperature of the heating plate is higher than the set temperature, and the temperature of the heating plate is kept at a predetermined time. It is determined whether or not the condition that the value differentiated by is positive is satisfied (STEP 113).

If it is determined in STEP 113 that the above condition is satisfied, that is, if the heating plate 5
1 is higher than the set temperature and the heating plate 51
If the value obtained by differentiating the temperature with respect to time is positive,
Air is supplied to the cooling medium paths 56 and 57, and the temperature of the heating plate 51 is lowered (STEP 116). Further, the temperature of the heating plate 51 is detected and read by the temperature sensor 65 (STEP 117), and it is determined whether or not the temperature of the heating plate 51 has dropped below (set temperature−0.3 ° C.) (STEP 118). , (Set temperature−0.
When the temperature is lowered to 3 ° C. or lower, the supply of air is stopped (STEP 119).

After the supply of air is stopped in STEP 119, control of the heater 52 is started (S119).
TEP120). Then, the temperature of the heating plate 51 is detected by the temperature sensor 65 and read (STEP).
121), the temperature of the heating plate 51 is (set temperature−
It is determined whether the temperature has risen to 0.3 ° C. or more (STEP
122), when the temperature is raised to (set temperature−0.3 ° C.) or more, a control constant (PID value in a stable state) of the heating plate 51 during normal processing is set (STEP 12).
3), settling end determination processing is performed (STEP 12).
4).

On the other hand, if it is determined in STEP 113 that the above condition is not satisfied, that is, whether the temperature of the heating plate 51 is lower than the set temperature or the temperature of the heating plate 51 is differentiated with time. If the value is not positive, it is determined whether or not the heating plate 51 has not been lifted even after the lapse of 20 seconds (STEP 11).
4) If there is no lifting, the control of the heater 52 is started and the temperature of the heating plate 51 is controlled to the set temperature in STEP 120 and below as in the case described above. The reason why it is determined in STEP 114 whether or not the temperature of the heating plate 51 has risen for 20 seconds is to determine whether or not the heat storage for raising the temperature remains in the heating plate 51. .

If the temperature of the heating plate 51 rises even after 20 seconds, it is determined whether or not a state in which the value obtained by differentiating the temperature of the heating plate 51 with time is not positive has continued for 5 seconds or more (STEP 115). If it has continued for more than 5 seconds, it is determined that the temperature rise due to the heat storage of the heating plate 51 has been eliminated, and STEP
At 120 or less, the control of the heater 52 is started,
The temperature of the heating plate 51 is controlled to a set temperature.

As described above, by supplying the cooling water to the cooling medium passages 56 and 57 and air purging, even if the temperature of the heating plate 51 becomes equal to or lower than the set temperature, or if the temperature of the heating plate 51 is higher than the set temperature, the differential value thereof becomes positive. However, since it is confirmed that there is no temperature rise due to heat storage, the control of the heater 52 is started and the temperature of the heating plate 51 is controlled to the set temperature, so that the in-plane uniformity of the temperature of the heating plate 51 is maintained. In addition, the temperature of the heating plate 51 can be quickly lowered to a new set temperature. In particular, after cooling with cooling water,
The cooling water is purged by using air to cool the cooling medium passages 56 and 5.
7, the temperature of the heating plate 51 can be maintained in a good condition after the temperature of the heating plate 51 is set.

Next, with reference to FIG. 9 and FIG. 10, a description will be given of a control in a case where the set temperature of the heating plate 51 is increased to a new set temperature. FIG. 9 is a graph showing the relationship between the heating plate 51 and the elapsed time.
FIG. 10 is a flowchart when the set temperature of the heating plate 51 is raised.

As shown in FIG. 9, when the set temperature of the heating plate 51 is raised, a control constant (PID value at the time of temperature rise) at the time of temperature rise is set, and the heater is set based on this. 52 is controlled, the temperature of the heating plate 51 is raised, and after approaching the set temperature, the control constant is switched to the control constant at the time of stability (PID value at the time of stability),
Based on this, the temperature is raised to the set temperature. This allows
The set temperature of the heating plate 51 can be quickly raised while maintaining the in-plane uniformity of the temperature of the heating plate 51.

More specifically, as shown in the flowchart of FIG. 10, the temperature controller 67 receives a command to raise the set temperature from the system controller 80 of the resist coating / developing processing system via the unit controller 66. When,
The temperature raising operation is started (STEP 200).

Next, the offset amount at the set temperature is calculated (STEP 201), and the switching temperature between the control constant during heating (PID value during heating) and the control constant during stable operation (PID value during stable). (PID value switching temperature) is calculated (STEP 202), the temperature to be raised is set (STEP 203), a control constant at the time of temperature rise (PID value at the time of temperature rise) is set (STEP 204),
Further, an offset value is set (STEP 205).

Next, confirmation of cooling water OFF (STEP 2)
06) and confirmation of air OFF (STEP 207). Thereafter, control based on a control constant (PID value at the time of temperature increase) when the temperature of the heater 52 is increased (STEP 208). Further, the temperature of the heating plate 51 is detected and read by the temperature sensor 65 (ST).
(EP209), it is determined whether or not the temperature of the heating plate 51 has risen to or above the PID value switching temperature (STEP).
210).

When the temperature of the heating plate 51 is increased to the PID value switching temperature or higher, the control constant is switched to the control constant at the time of stability (the PID value at the time of stability), and the heater 52 is controlled based on this. Under control, the heating plate 51 is heated to the set temperature (STEP 21).
1), settling end determination processing is performed (STEP 21)
2). In the above STEP 210, the heating plate 51
If the temperature is lower than the ID value switching temperature, STEP 209 is performed again.
Of the heating plate 51 is read.

When the temperature of the heating plate 51 is increased by the PID control as described above, when the temperature of the heating plate 51 reaches the set temperature as shown by the broken line in FIG. Without this, a so-called overshoot phenomenon in which the temperature further rises may occur. In this case, as shown in FIG. 11, when the temperature of the heating plate 51 reaches the set temperature, the cooling medium path 56,
Supply cooling water to 57. Thus, the temperature of the heating plate 51 can quickly reach the new set temperature while suppressing overshoot.

The specific control at that time will be described with reference to the flowchart of FIG. First, in STEP 210 of the above-described flowchart at the time of temperature increase (FIG. 10), it is determined whether or not the temperature of the heating plate 51 has risen to the PID value switching temperature or higher. (That is, whether there is a possibility of overshoot) is determined (STEP 301).

If there is a possibility of overshoot, supply of cooling water to the cooling medium passages 56 and 57 is started (STEP 302). Then, the temperature of the heating plate 51 is detected and read by the temperature sensor 65 (S
(Step 303) It is determined whether or not the temperature of the heating plate 51 has dropped below a predetermined temperature (STEP 30).
4) When the temperature is lowered below the predetermined temperature, the supply of the cooling water is stopped (STEP 305). If the temperature is not lowered below the predetermined temperature, the temperature of the heating plate 51 is read again in STEP 303.

After finishing the cooling with the cooling water,
Air as a purge gas is supplied to the cooling medium passages 56 and 57 for a designated time (purge time) to be purged (S
TEP 306).

After that, STEP209 to STEP301
When it is determined that the overshoot has been resolved through the process (2), the control constant is switched to the control constant in the stable state (PID value in the stable state) in STEP 211 as in the case of the temperature rise described above, and the heater 52 Is controlled based on this, and the heating plate 51 is heated to the set temperature.

By controlling the supply of the cooling water as the cooling medium when the set temperature is reached, the temperature of the heating plate 51 can quickly reach the new set temperature while suppressing overshoot. . Further, since the air is purged after passing the cooling water, the in-plane uniformity of the temperature of the heating plate 51 can be favorably maintained.

With the above control, for example, one wafer cassette CR is set with the heating plate 51 at a predetermined temperature.
After the heating process for one-half lot of wafers W (for example, 25 wafers) is completed, and the heating plate 51 is heated to another temperature lower than the predetermined temperature to perform the heating process for the next lot, FIG. As shown, immediately after the heating processing of the previous lot is completed, the system controller 80 changes the set temperature of the unit controller 66 of the heating processing unit (HP) from the first set temperature corresponding to the previous lot to the next lot. Preferably, control is performed so as to change to the corresponding second set temperature. Thereby, the heat treatment unit (H
P) can be shifted to a state where the heat treatment of the next lot can be performed more quickly. Also, when the temperature is set to be higher than the initial temperature, it is also preferable to perform the same immediately after the completion of the heat treatment for one lot.

Next, another embodiment of the present invention will be described. Third of the above-mentioned resist coating and developing processing system
When the set temperature of a plurality of heat treatment units (HP) arranged so as to be stacked in multiple stages like the processing unit group G ₃ and the fourth processing unit group G ₄ is lowered, FIG.
As shown in (a), each heat treatment unit (HP1 to H
Attempting to simultaneously supply cooling water to P4) may result in running out of cooling water. On the other hand, in the present embodiment, as shown in FIG. 14B, the order (for example, to
By controlling the cooling water to be supplied in this order, it is possible to prevent a shortage of the cooling water. At this time, by controlling the cooling water to be supplied in order from the lower heat processing unit (HP) as shown in the figure, thermal mutual interference between the heat processing units (HP1 to HP4) is further reduced. Temperature can be controlled more precisely. Also in this case, it is preferable to change the set temperature of the heating plate 51 immediately after the processing of the wafer W before the temperature rise ends.

Next, still another embodiment of the present invention will be described. In this embodiment, as shown in FIG. 15, the cooling water discharged from the heat treatment unit (HP) (for example, a temperature of about 80 ° C. to 100 ° C.)
Is mixed with, for example, cooling water from a factory, and is provided with a water storage unit 150 for draining after cooling. Water storage unit 150
Is provided with a mixing vessel 152 having an opening 153 below in a water storage tank 151, and below the opening 153, wastewater from a heat treatment unit (HP) and discharge of mixed water of cooling water on the factory side are disposed. An outlet 154 is provided. In addition, a drain port 155 is provided below the storage tank 151. Thereby, the water storage unit 150 can drain lower-temperature water out of the mixed water from the outlet 154, and the higher-temperature cooling water discharged from the heat treatment unit (HP) is directly discharged. Can be prevented.

Next, still another embodiment of the present invention will be described. For the installation of the cooling medium passage in the heating plate 51, a pipe 161 made of, for example, a stainless alloy is used as the upper cooling medium passage 56 and the lower cooling medium passage 57 in the groove provided in the face plate 54 and the groove provided in the cooling plate 55. In this embodiment, as shown in FIG. 16, a groove 163 provided in the face plate 54 or the cooling plate 55 is made of a material softer and higher in heat conductivity than a stainless steel alloy such as aluminum. The cushioning member 162 is spread thinly, and the pipe 161 is placed on the cushioning member 162 to perform a press or the like, thereby setting a cooling medium path. Since the upper cooling medium passage 56 and the lower cooling medium passage 57 have many bent portions as shown in FIGS. 5 and 6, the pipe 161 and the face plate 54 or the cooling plate Substantially improved adhesion with 55,
The thermal conductivity is also improved, and the cooling efficiency of the heating plate 51 can be improved.

The present invention is not limited to the above embodiment, but can be variously modified. In the above embodiment, water is used as the cooling medium. However, the present invention is not limited to this, and other liquids, gases such as air and nitrogen, and Peltier elements can also be used. Further, the purge gas is not limited to air, and various gases can be used. However, when the cooling medium is not liquid, the purge gas is not required. The cooling medium path is not limited to the above embodiment. When a Peltier element or the like is used, a cooling medium path is unnecessary. Further, the heater is not limited to the above embodiment, and other various heaters can be used. Furthermore, in the above-described embodiment, the case where the present invention is applied to the heat treatment unit used in the resist coating and developing treatment system has been described. However, the present invention is not limited to this. Can be applied in case. Further, the substrate is not limited to a semiconductor wafer, and can be applied to a heat treatment of another substrate such as an LCD substrate.

[0094]

As described above, according to the present invention,
Since the heating plate is cooled by the cooling means, especially when the set temperature of the heating temperature is lowered, the temperature of the heating plate can be very quickly brought to the set temperature by the cooling means. In addition, since a cooling medium path is formed in the heating plate, and the cooling medium is supplied to the cooling medium path by the cooling medium supply means, particularly when the set temperature of the heating temperature is lowered, the cooling medium is used for the heating plate. The temperature can reach the set temperature very quickly.

Also, in this case, by making the cooling medium path have the above-mentioned specific structure, the in-plane uniformity of the heating plate temperature can be improved and the temperature can be rapidly lowered.

Further, when the temperature of the heating plate is lowered to a predetermined set temperature, the cooling medium supply means is controlled to supply the cooling medium to the cooling medium path, and the temperature of the heating plate is lowered to the set temperature or lower. After that, the heater is operated to raise the temperature of the heating plate to a predetermined set temperature, so that after the temperature of the heating plate is lowered by the cooling medium, the heater can be operated to perform fine adjustment of the temperature. Can be promptly changed to a new set temperature, and the in-plane uniformity of the temperature can be maintained satisfactorily.

Furthermore, when the temperature of the heating plate is lowered to a predetermined set temperature, a cooling medium stop temperature higher than the set temperature is set based on the temperature of the heating plate and the set temperature, and the cooling medium supply means is set. Controls the supply of the cooling medium to the cooling medium path, and stops the supply of the cooling medium when the temperature of the heating plate drops to the cooling medium stop temperature. It is possible to prevent the temperature from being too low than the temperature, and to quickly change the temperature of the heating plate to a new set temperature.

Further, when the temperature of the heating plate is raised to a predetermined temperature, the heater is operated with the cooling medium supply means stopped to raise the temperature of the heating plate to the predetermined temperature. At this time, when the temperature of the heating plate overshoots, the liquid cooling medium is supplied to the cooling medium path, so that the temperature of the heating plate can quickly reach the new set temperature while suppressing overshoot. .

[Brief description of the drawings]

FIG. 1 is a plan view showing an overall configuration of a semiconductor wafer resist coating and developing system incorporating a heat processing unit according to an embodiment of the present invention.

FIG. 2 is a front view showing the overall configuration of a semiconductor wafer resist coating and developing system incorporating a heat processing unit according to an embodiment of the present invention.

FIG. 3 is a rear view showing the overall configuration of a semiconductor wafer resist coating and developing system incorporating a heat processing unit according to an embodiment of the present invention.

FIG. 4 is a schematic diagram showing a heat treatment unit (HP) and a control system thereof according to an embodiment of the present invention.

FIG. 5 is a plan view of a cooling medium passage mounted in a face plate of the heat treatment unit shown in FIG. 4;

6 is a plan view of a cooling medium passage mounted in a cooling plate of the heat treatment unit shown in FIG.

FIG. 7 is a graph showing the transition of the temperature of the heating plate in the control when the temperature of the heating plate is lowered.

FIG. 8 is a flowchart showing control when the set temperature of the heating plate is reduced and the temperature is lowered to the new set temperature.

FIG. 9 is a graph showing a transition of the temperature of the heating plate in the control when the temperature of the heating plate is raised.

FIG. 10 is a flowchart illustrating control when the set temperature of the heating plate is increased and the temperature is increased to the new set temperature.

FIG. 11 is a graph showing a change in the temperature of the heating plate when an overshoot occurs when the temperature of the heating plate is raised.

FIG. 12 is a flowchart illustrating control in a case where overshoot occurs when the temperature of the heating plate is raised.

FIG. 13 is a graph showing an example of a change over time of a set temperature of a heating plate.

FIG. 14 is an explanatory diagram illustrating a mode of supplying cooling water to a heat treatment unit according to another embodiment of the present invention.

FIG. 15 is a schematic sectional view showing an example of a mixing section according to still another embodiment of the present invention.

FIG. 16 is a partial cross-sectional view showing a state where a buffer member is inserted between a groove of a heating plate and a pipe according to still another embodiment of the present invention.

[Explanation of symbols]

 51 Heating plate 52 Heater 56, 57 Cooling medium passage 56a, 56b, 57a, 57b Dividing passage 58a, 58b, 58c, 58d Coolant inlet 59a, 59b, 59c, 59d Coolant outlet 60, 61 Coolant supply path (supply means) 62, 63 Switching valve 65 Temperature sensor 66 Unit controller 67 Temperature controller HP Heat treatment unit W Semiconductor Wafer (substrate)

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Atsushi Okura, 2655 Tsukurei, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Inside the Kumamoto Office of Electron Kyushu Co., Ltd. Electron Kyushu Kumamoto Office

Claims (25)

[Claims] 1. A substrate heating apparatus for performing a heating process on a substrate, comprising: a heating plate for performing a heating process on the substrate by placing the substrate close to or on the substrate; and a heating plate embedded in the heating plate. And a cooling unit for lowering the temperature of the heating plate, and a control unit for controlling the heater and the cooling unit to control the temperature of the heating plate to a set temperature. Substrate heat treatment equipment. 2. A substrate heating apparatus for performing a heating process on a substrate, comprising: a heating plate for performing a heating process on the substrate by placing the substrate close to or on the substrate; and a heating plate embedded in the heating plate. A cooling medium passage formed in the heating plate, through which a cooling medium for flowing the cooling medium through which the temperature of the heating plate is lowered; and a cooling medium supply means for supplying the cooling medium to the cooling medium passage. Controlling the heater and the cooling medium supply means,
A heating means for controlling the temperature of the heating plate to a set temperature. 3. The substrate according to claim 2, wherein the cooling medium path has at least one cooling medium path pattern formed in a plane and parallel to a surface of the heating plate. Heat treatment equipment. 4. The cooling medium path pattern of the cooling medium path is arranged on the substrate side of the heater and on the side opposite to the substrate of the heater, respectively. The substrate heating apparatus according to any one of claims 1 to 3. 5. The cooling medium path pattern has a cooling medium inlet and an outlet, the inlet and the outlet are provided in close proximity to each other, and at least a part of the inlet side portion of the cooling medium path and the outlet are provided. 5. The substrate heating apparatus according to claim 3, wherein at least a part of the side portion is close to each other, and the cooling medium path is bent. 6. The substrate heating apparatus according to claim 3, wherein the cooling medium path pattern is formed point-symmetrically. 7. The cooling medium path pattern according to claim 3, wherein each of the cooling medium path patterns includes a plurality of divided paths, and each of the divided paths has an inlet and an outlet for a cooling medium. The substrate heating apparatus according to any one of claims 1 to 3. 8. The cooling means controls the cooling medium supply means to supply a cooling medium to the cooling medium path when lowering the temperature of the heating plate to a predetermined set temperature.
The temperature of the heating plate is decreased to a set temperature or less, and then the heater is operated to increase the temperature of the heating plate to a predetermined set temperature. The substrate heating apparatus according to claim 1. 9. When the temperature of the heating plate is lowered to a predetermined set temperature, the control unit sets a cooling medium stop temperature higher than the set temperature based on the temperature of the heating plate and the set temperature. Controlling the cooling medium supply means, supplying a cooling medium to the cooling medium path, when the temperature of the heating plate has dropped to a cooling medium stop temperature,
The substrate heating apparatus according to any one of claims 2 to 8, wherein the supply of the cooling medium is stopped. 10. The apparatus according to claim 2, wherein the control unit activates the heater while the cooling medium supply unit is stopped when raising the temperature of the heating plate to a set temperature. The substrate heating treatment apparatus according to any one of the above. 11. The control means controls the cooling medium supply means when the temperature of the heating plate rises to a set temperature or more when the temperature of the heating plate rises to a set temperature. The substrate heating apparatus according to claim 10, wherein a cooling medium is supplied to the cooling medium path. 12. A cooling medium supply pipe for supplying a liquid cooling medium to the cooling medium passage,
A purge gas pipe for supplying a purge gas to the cooling medium path; and a switching valve for switching any one of them to guide the cooling medium path to the cooling medium path, wherein the control means causes a liquid cooling medium to flow through the cooling medium path. 12. The substrate heating apparatus according to claim 2, wherein the switching valve is switched to allow the purge gas to flow after the switching. 13. The control means, after stopping the supply of the purge gas, when the temperature of the heating plate is higher than a set temperature and a value obtained by differentiating the temperature of the heating plate with respect to time is positive. A purge gas is supplied to the cooling medium passage until the temperature of the heating plate falls from a set temperature to a temperature lower than or equal to a predetermined lower temperature, and thereafter, the control of the heater is started, and the temperature of the heating plate is reduced to a predetermined value. 2. The method according to claim 1, wherein the temperature is controlled to a set temperature.
3. The substrate heating apparatus according to 2. 14. The control unit, after stopping the supply of the purge gas, if the temperature of the heating plate is not higher than a set temperature or a value obtained by differentiating the temperature of the heating plate with time is not positive, Further, when the temperature of the heating plate does not rise during a predetermined time, or when the state in which the differential value is not positive continues for a predetermined time or more, the control of the heater is started to reduce the temperature of the heating plate. 13. The temperature is controlled to a predetermined set temperature.
A substrate heating treatment apparatus according to claim 1. 15. A substrate heating apparatus for performing a heating process on a substrate, comprising: a heating plate for performing a heating process on the substrate by placing the substrate close to or on the substrate; and a heating plate embedded in the heating plate. A cooling medium passage formed in the heating plate and through which a cooling medium for cooling the heating plate flows, and a cooling medium supply means for supplying a cooling medium to the cooling medium passage Controlling the heater and the cooling medium supply means,
Control means for controlling the temperature of the heating plate to a predetermined set temperature, the control means, when changing the set temperature from the first set temperature to the second set temperature, the first A substrate heat treatment apparatus, wherein the set temperature is changed to the second set temperature immediately after the completion of the substrate heat treatment at the set temperature. 16. A heating plate for performing a heating process on a substrate by placing or approaching the substrate, a heater embedded in the heating plate for raising the temperature of the heating plate, A plurality of substrate heating processing units each including a cooling medium path through which a cooling medium for lowering the temperature of the heating plate flows; and supplying a cooling medium to each of the cooling medium paths of the plurality of substrate heating processing units. Cooling medium supply means; and control means for controlling the heaters and the cooling medium supply means of each of the plurality of substrate heating processing units to control the temperature of each heating plate of the plurality of substrate heating processing units. The control means, when lowering the temperature of the respective heating plate from a first set temperature to a second set temperature
A substrate heating processing apparatus, characterized in that the cooling medium supply means is controlled to provide a time difference in the time when the supply of the cooling medium is started to each of the cooling medium paths. 17. The plurality of substrate heating units are vertically stacked, and the control unit starts the supply of the cooling medium from the cooling medium passage of the substrate heating unit below. 17. The substrate heating apparatus according to claim 16, wherein control is performed to perform the heating. 18. The substrate heating apparatus according to claim 16, wherein the temperature of the heating plate is started immediately after the substrate has been heated at the first set temperature. . 19. A heating plate for performing a heating process on a substrate by approaching or placing the substrate, a heater buried in the heating plate for raising the temperature of the heating plate, and a heater formed in the heating plate, Controlling the temperature of the heating plate in a substrate heating apparatus including a cooling medium path through which a cooling medium for lowering the temperature of the heating plate flows, and cooling medium supply means for supplying a cooling medium to the cooling medium path. A temperature control method for controlling the temperature of the heating plate to a predetermined set temperature, controlling the cooling medium supply means, supplying a cooling medium to the cooling medium path, the heating plate Temperature control wherein the temperature is decreased to a set temperature or lower, and thereafter, the heater is operated to raise the temperature of the heating plate to a predetermined set temperature. Law. 20. A heating plate for performing a heat treatment on the substrate by placing the substrate close to or on the substrate, a heater embedded in the heating plate for raising the temperature of the heating plate, and a heater formed in the heating plate, Controlling the temperature of the heating plate in a substrate heating apparatus including a cooling medium path through which a cooling medium for lowering the temperature of the heating plate flows, and cooling medium supply means for supplying a cooling medium to the cooling medium path. A temperature control method for performing, when lowering the temperature of the heating plate to a predetermined set temperature, based on the temperature of the heating plate and the set temperature, set a cooling medium stop temperature higher than the set temperature. Controlling the cooling medium supply means to supply a cooling medium to the cooling medium path, and when the temperature of the heating plate falls to a cooling medium stop temperature, the cooling medium Temperature control method characterized by stopping the supply of the. 21. The temperature control according to claim 19, wherein when heating the heating plate to a set temperature, the heater is operated with the cooling medium supply means stopped. Method. 22. The control means, wherein when the temperature of the heating plate rises above a set temperature, the control means controls the cooling medium supply means to supply a cooling medium to the cooling medium path. The temperature control method according to claim 21, wherein: 23. The cooling medium according to claim 19, wherein the cooling medium is a liquid, and after the cooling medium is caused to flow through the cooling medium path, a purge gas is caused to flow. The described temperature control method. 24. After the supply of the purge gas is stopped,
When the temperature of the heating plate is higher than the set temperature and the value obtained by differentiating the temperature of the heating plate with respect to time is positive, the temperature of the heating plate decreases from the set temperature to a temperature lower than a predetermined lower temperature. 24. The temperature control according to claim 23, wherein a purge gas is supplied to the cooling medium passage until the temperature of the heating plate is increased, and then the control of the heater is started to control the temperature of the heating plate to a predetermined set temperature. Method. 25. After stopping the supply of the purge gas,
If the temperature of the heating plate is not higher than the set temperature, or if the value obtained by differentiating the temperature of the heating plate with time is not positive, further, when the temperature of the heating plate does not rise during a predetermined time, or 24. The temperature according to claim 23, wherein when the state in which the differential value is not positive continues for a predetermined time or more, control of the heater is started to control the temperature of the heating plate to a predetermined set temperature. Control method.