JP2001067620A - Production of magneto-resistive element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily align the magnetization of a fixed layer by forming a magnetic layer (fixed layer) which is not easily magnetized and rotated by an external magnetic field and a magneto-resistive(MR) element composed of a magnetization rotation suppression layer, holding both at a specific temperature range and impressing the magnetic field of a specific range thereto. SOLUTION: The directions of easy magnetization of the fixed layer 3 and a free layer 5 are intersected orthogonally with each other and are so arranged that the direction of the signal magnetic field to be detected is made parallel or counter parallel to the magnetization direction of the fixed layer. The control of the easy axes is first executed by the magnetic field impression to a substrate during desosition. The magnitude of the magnetic field is specified to at least >=10 Oe and to <=200 Oe as an upper limit. Also, the heat treatment temperature is specified to >=200 to <=300 deg.C. The magnetic field impression direction of this time is made parallel to the direction of the magnetization of the fixed layer 3 like an arrow H. The control of the magnetization direction of the fixed layer by the heat treatment using such weak magnetic field is particularly effective when the magnetization rotation suppression layer of a relatively low bias effect is used.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a magnetoresistive effect element which causes a large magnetoresistance change in a low magnetic field.

[0002]

2. Description of the Related Art In recent years, the density of a hard disk drive has been remarkably increased, and the progress of a reproducing magnetic head for reading magnetization recorded on a medium has been remarkable. Among them, a magneto-resistance effect element (MR element) called a spin valve utilizing the giant magneto-resistance effect is a currently used magneto-resistance effect type head (M
It has been actively researched to significantly increase the sensitivity of the (R head).

In a spin valve, two ferromagnetic layers are arranged via a nonmagnetic layer, and the magnetization direction of one magnetic layer (fixed layer) is fixed by an exchange bias magnetic field by a magnetization rotation suppressing layer (pinning layer). (At this time, the ferromagnetic layer and the magnetization rotation suppressing layer are collectively referred to as an exchange coupling film), and the magnetization direction of the other magnetic layer (free layer) is relatively freely moved according to the external magnetic field, thereby being fixed. By changing the relative angle between the magnetization directions of the layer and the free layer, a change in electric resistance is caused.

[0004] As a material used for the spin valve film, an Ni—Fe film is used as a magnetic film, Cu is used as a nonmagnetic film, and Fe—Mn is used as a magnetization rotation suppressing layer. About 2% was proposed (Journal of Magnetics and Magnetic Materials 93, Item 101 (1991
Year) (Journal of Magnetism)
and Magnetic Materials 9
3, p101, 1991)). Thus, the one using the FeMn film as the magnetization rotation suppressing layer has a small MR ratio,
In addition, the blocking temperature (the temperature at which the effect of fixing the magnetization of the fixed layer by the magnetization rotation suppressing layer is lost) is not sufficiently high.
Since eMn itself has a problem in corrosion resistance, spin valve films using various types of magnetization rotation suppressing layers have been proposed. Above all, PtMn-based alloys have good corrosion resistance and thermal stability, and are currently in practical use for reproducing magnetic heads for hard disks. N
A spin valve film using an oxide such as iO or α-Fe ₂ O ₃ as the magnetization rotation suppressing layer has a remarkably large MR ratio of 15% or more.

[0005] As the size of the magnetic head is reduced, the size of the magnetoresistive element is also reduced, so that the magnetization of the fixed layer becomes unstable due to the demagnetizing field. Further, the magnetic field leaking from the fixed layer affects the switching field of the free layer, making it difficult to adjust the bias point. In order to solve such a problem of the fixed layer, a laminated ferri-type fixed layer has been proposed (US Pat. No. 5,465,551).
85). In this method, the fixed layer is formed by a pair of ferromagnetic layers further via a nonmagnetic layer. Ru as a nonmagnetic layer,
As the magnetic layer, a Co, Co—Fe alloy or the like is often used. Since the magnetic layer is strongly anti-parallel coupled through the non-magnetic layer, the magnetization direction of the fixed layer is more stabilized. Further, since the magnetizations of the pair of ferromagnetic layers are arranged in antiparallel, the leakage magnetic fluxes cancel each other and become small.

[0006]

However, especially in the case of a spin valve film using a laminated ferri-type pinned layer, a large magnetic field is required for heat treatment for re-applying anisotropy of the pinned layer due to a large saturation magnetic field. Met. Therefore, there was a problem that the device became large. In the case of a magnetization rotation suppressing layer having a relatively small pinning magnetic field such as α-Fe 2 O 3, it is difficult to re-apply anisotropy even when a large magnetic field is used.

[0007]

According to a method of manufacturing a magnetoresistive element of the present invention, a magnetic layer (free layer) which is easily rotated by an external magnetic field on a non-magnetic substrate is provided in order to solve the above problems. A magnetic layer (fixed layer) that is not easily rotated by an external magnetic field provided separately from the free layer via a nonmagnetic layer, and a magnetization layer provided for the purpose of suppressing the magnetization rotation of the fixed layer. A method for manufacturing a magnetoresistive element, comprising: a first step of forming a magnetoresistive element composed of a rotation suppressing layer; and a second step of controlling the magnetization direction of the magnetic layer (fixed layer and free layer). , 200 ° C or higher, 300
The method is characterized in that a magnetic field of not less than 10 Oe and not more than 200 Oe is applied while maintaining the temperature at not more than ℃ to control the easy magnetization direction of the fixed layer.

The present invention is particularly effective when the fixed layer is a laminated ferrimagnetic layer.

Further, the present invention is characterized in that the magnitude of the applied magnetic field is 2 Oe or more and 100 Oe or less.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a magnetoresistive element according to the present invention will be described below with reference to the drawings.

FIG. 2 is an example of a sectional view showing the structure of the magnetoresistive element of the present invention. In FIG. 2A, the magnetization rotation suppressing layer 2, the fixed layer 3,
A non-magnetic layer 4 and a free layer 5 are sequentially laminated. Fixed layer 3
The magnetization of the magnetic film is pinned by the exchange bias magnetic field by the magnetization rotation suppressing layer. The free layer 5, which is one of the magnetic materials, is magnetically separated from the fixed layer 3 by the non-magnetic layer 4, so that the free layer 5 can relatively freely move by an external magnetic field. Generally, when the magnetization directions of the two magnetic layers are antiparallel, electrons are scattered at the [magnetic layer / nonmagnetic layer] interface, and the resistance of the element increases. On the other hand, when the magnetization directions are the same, the scattering of electrons at the interface is small and the resistance of the element is low. Accordingly, the angle of magnetization between the fixed layer 3 and the free layer 5 changes relatively, and thereby the electrical resistance of the element changes. As a magnetoresistive sensor, an electrode is attached to the free layer 5 in FIG. 2 to allow a current to flow, and a resistance change caused by an external magnetic field can be read as an electric signal. Alternatively, the structure on the underlayer 6 in FIG.

In FIG. 2, the magnetic film of the fixed layer 3 is made of Co or Co—Fe, Ni—Fe, Ni—Fe—.
Materials such as Co alloys are excellent. In particular, Co or Co-
Since the Fe alloy is good for obtaining a large MR ratio, the non-magnetic layer 4
It is desirable to use Co-rich at the interface with.

The thickness of the fixed layer 3 is preferably 1 nm or more and 10 nm or less.

More preferably, as shown in FIG. 2 (b), the fixed layer 3 is not a single layer, but a pair of ferromagnetic films 3-3 antiferromagnetically coupled via the nonmagnetic layer 3-2. 1 and 3-3 are preferably used. As a result, the pinning effect of the magnetization of the fixed layer is increased, and the magnetization of the fixed layer is partially canceled, so that the magnetic flux leaking from the fixed layer to the free layer can be reduced or adjusted. In this case, the thickness of each ferromagnetic layer is appropriately between 1 and 3 nm. The material is the same as when used alone. As a nonmagnetic layer inserted between a pair of ferromagnetic layers, Ru, Ir or the like is appropriate. The film thickness is 0.3n
It is preferably from m to 1.2 nm.

The Ni—Co—Fe alloy is suitable for the free layer 5 of the magnetoresistive element shown in FIG. Ni-Co-
As the atomic composition ratio of the Fe film, Ni-rich soft magnetic film of Ni _x Co _y Fe _z 0.6 ≦ x ≦ 0.90 ≦ y ≦ 0.40 ≦ z ≦ 0.3 or Ni _{x '} Co _y'
It is desirable to use a Co-rich film satisfying _{Fez ′} 0 ≦ x ′ ≦ 0.4 0.2 ≦ y ′ ≦ 0.95 0 ≦ z ′ ≦ 0.5. Films with these compositions have low magnetostriction characteristics (1 × 10 ⁻⁵ ) required for sensors and MR heads.

The thickness of the free layer 5 is 1 nm or more and 10 n or more.
m or less is good. When the film thickness is large, the MR ratio is reduced due to the shunt effect, but when too small, the soft magnetic characteristics are deteriorated. More preferably, the thickness is 1.5 nm or more and 7 nm or less.

In order to further increase the MR ratio, it is effective to insert an interface magnetic layer at the interface between the ferromagnetic layer (the fixed layer 3 or the free layer 5) and the nonmagnetic layer 4. Since the free layer needs soft magnetic characteristics, Ni-rich is good. However, Co-rich is used for the interfacial magnetic layer of the free layer in contact with the non-magnetic layer 4, and the soft magnetic characteristics are obtained by using Ni-rich for the other layers. It is possible to achieve a high MR ratio without loss. If the thickness of the interfacial magnetic layer of the free layer is large, the soft magnetic characteristics deteriorate and M
Since the magnetic field sensitivity of the R ratio decreases, the thickness of the interface magnetic layer is 2
nm or less, preferably 1 nm or less. In order for this interfacial magnetic layer to work effectively, a film thickness of at least 0.2 nm is required.
A film thickness of at least nm is preferred. As the material of the interface magnetic layer, C
An o- or Co-rich Co-Fe alloy is superior.

The nonmagnetic layer 4 between the free layer 5 and the fixed layer 3 includes Cu, Ag, Au, Ru, etc.
Is better. The thickness of the nonmagnetic layer 4 needs to be at least 0.8 nm or more in order to weaken the interaction between the magnetic layers. When the thickness of the non-magnetic layer 4 is increased, the MR ratio is reduced.
Should be: The thickness of the nonmagnetic layer is 3 nm.
In the following case, in the configuration of FIG. 2, the flatness of each layer from the substrate to the nonmagnetic layer is important, and if the flatness is poor, the two magnetic layers that should be magnetically separated by the nonmagnetic layer 4 3
And 5, magnetic coupling occurs to cause deterioration of the MR ratio and decrease in sensitivity. Therefore, it is desirable that the unevenness at the interface between the magnetic layer and the non-magnetic layer be 0.5 nm or less.

As the magnetization rotation suppressing layer 2, an antiferromagnetic material is appropriate. In the case of an oxide, an α-Fe ₂ O ₃ film, NiO
Film, etc., and in the case of metal, Fe-Mn, Ni-M
n, Pd-Mn, Pt-Mn, Ir-Mn, Cr-A
1, Cr-Mn-Pt, Fe-Mn-Rh, Pd-Pt
-Mn, Ru-Rh-Mn, Mn-Ru, Cr-Al and the like. The thickness of the magnetization rotation suppressing layer is at least 5 n
m or more is required, and 50 nm or less, preferably 20 n
m, more preferably 10 nm or less.

As the substrate 1, glass, MgO, Si,
A relatively smooth surface such as an Al ₂ O ₃ —TiC substrate is used. When manufacturing an MR head, Al ₂ O ₃ —TiC
Substrates are suitable.

As a method of forming each layer described above,
A sputtering method is suitable. As the sputtering method, there are a DC sputtering method, an RF sputtering method, an ion beam sputtering method and the like, and any of the methods can produce the magnetoresistive element of the present invention.

In the magnetoresistive element of the present invention, the directions of easy magnetization of the fixed layer 3 and the free layer 5 are orthogonal to each other as shown in FIG. It is preferable that the direction of the signal magnetic field to be detected is arranged so as to be parallel or anti-parallel to the magnetization direction of the fixed layer. The easy axis is controlled by applying a magnetic field to the substrate during film formation. However, in the patterning of the magnetoresistive element and the like, there is a heat load to a high temperature due to the hardening of the resist. For this reason, it is necessary to impart anisotropy to the fixed layer by reheating in a magnetic field to impart anisotropy to the fixed layer. In the case of a laminated ferri-type fixed layer, a particularly large magnetic field is required because the saturation magnetic field becomes large (for example, Journal of Applied).
Physics, vol. 85, pp4928-493
0). However, as a result of investigations by the present inventors, it has been found that heat treatment in a very small magnetic field is effective for re-adding anisotropy. The magnitude of this field is at least 10
It should be Oe or more, preferably 2 Oe or more, and the upper limit should be 200 Oe or less, preferably 100 Oe, more preferably 50 Oe or less. The heat treatment temperature must be 200 ° C. or higher, more preferably 220 ° C. or higher, and should be 300 ° C. or lower, preferably 280 ° C. or lower. The magnetic field application direction at this time is preferably applied in parallel to the magnetization direction of the fixed layer 3 as indicated by the arrow H in FIG. In the case of the laminated ferri type shown in FIG. 2B, the ferromagnetic layers 3-1 and 3-3 in the fixed layer 3 shown in FIG.
Preferably, a magnetic field is applied in the thicker direction of easy magnetization. When the thicknesses of 3-1 and 3-2 are the same, the magnetization rotation suppressing layer 2
It is preferable to apply a magnetic field in parallel to the 3-1 ferromagnetic layer in contact with. Control of the magnetization direction of the fixed layer by such heat treatment using a weak magnetic field is performed by using α-Fe as a magnetization rotation suppressing layer.
_This is particularly effective when a magnetization rotation suppressing layer having a relatively low bias effect such as ₂ O ₃ is used.

A magnetoresistive head can be constructed using the magnetoresistive element of the present invention as described above. FIG. 4 shows an example of the configuration of the MR head. FIG. 3 is a view of FIG. 4 as viewed in the direction of arrow A, and FIG. 5 shows a cross section taken along a plane indicated by a dotted line B. Hereinafter, description will be made mainly with reference to FIG.

In FIG. 3, the MR element section 9 is configured to be sandwiched between the upper and lower shield caps 14, 11. Al ₂ O ₃ , Al
An insulating film such as N or SiO ₂ is used. Further outside the shield caps 11 and 14 are upper and lower shields 1.
There are 0 and 15. Shields 10 and 15 are Ni-
Fe (-Co), Co-Nb-Zr, Fe-Ta-N
A soft magnetic film such as an alloy is used. Ni-Fe (-Co)
The system can be produced by a plating method, and the Co-Nb-Zr system has excellent corrosion resistance and good control of anisotropy.

In order to fix the magnetization of the free layer of the MR element in the direction shown in FIG. 1 and to reduce Barkhausen noise, C
Hard bias portion 1 made of a hard film such as an o-Pt alloy
A bias magnetic field of 2 is used. The MR element 9 is insulated from the shields 10, 15 and the like by the shield gaps 11, 14, and reads a change in resistance of the MR element 9 by passing a current through the lead 13.

Since the MR head is a read-only head, it is usually used in combination with an inductive head for writing. 5 and 6, not only the reproducing head section 32 but also the write head section 31 are illustrated. FIG.
FIG. 6 shows a case where a write head is further formed in FIG.
It is. As the write head, the upper shield 15
Upper core 1 formed thereon via a recording gap film 40
There are six.

FIG. 6 shows a conventional abutted junction (a
Although the MR head structure by butted junction has been described, the use of the overlay structure shown in FIG. 7, which can more precisely regulate the track width 41 with the reduction in track density due to high density, is also effective. .

Next, the recording / reproducing mechanism of the MR head will be described with reference to FIG. As shown in FIG. 5, at the time of recording, the magnetic flux generated by the current flowing through the coil 17 leaks from between the upper core 16 and the upper shield 15 and can be recorded on the magnetic disk 21. Head 30
Travels in the direction of arrow c relative to the disk 21. By reversing the current flowing through the coil 17,
The direction 23 of the recording magnetization can be reversed. Also,
Since the recording length 22 becomes shorter as the recording density increases, the recording cap length 19 must be reduced accordingly.

When reproducing, the magnetic flux 24 leaking from the recording magnetized portion of the magnetic disk 21 acts on the MR element portion 9 sandwiched between the shields 10 and 15 to change the resistance of the MR element. Since a current flows through the MR element section 9 through the lead section 13, a change in resistance can be read as a change in voltage (output).

In consideration of the future increase in the density of hard disk drives, it is necessary to shorten the recording wavelength, and for that purpose, it is necessary to shorten the distance d between the shields shown in FIG. For this purpose, as is apparent from FIG.
It is necessary to make the element portion thin, and it is desirable that the thickness be at least 20 nm or less. Since the oxide magnetization rotation suppressing layer is an insulating film, it can be regarded as a part of the lower shield gap 11 rather than the MR element part 9, and it can be said that the structure is suitable for this purpose.

Although the conventional horizontal GMR head has been described above, the present invention is also effective for a vertical GMR head. The current direction is perpendicular to the magnetic field detected by the horizontal GMR head, whereas the vertical GMR head is characterized by flowing current parallel to the magnetic field.

FIG. 9 shows a yoke type head different from the shield type shown in FIG. 5 as an example of another magnetic head. In FIG. 5, reference numeral 16 denotes a yoke composed of a soft magnetic film for guiding a signal magnetic field to be detected by the MR element section 9. Usually, this yoke section uses a conductive metal magnetic film. The insulating film 17 is provided so as not to be short-circuited. Although this head uses yoke, its sensitivity is lower than that of the type shown in FIG. 5, but as shown in FIG.
Since there is no need to place an element, it is advantageous to make the gap extremely small.

Next, a method of manufacturing the MR head shown in FIG. 5 can be schematically described as shown in FIG.

That is, as shown in FIG. 3, first, an appropriate process is performed on the substrate, and then the lower shield film 10 is formed (S801). Further, the lower gap shield 11
Is formed (S802), the MR element section 9 is formed (S803). Next, after patterning the MR cable portion 9 as shown in FIG. 3 (S804), the hard bias portion 1 is formed.
2. The lead film 13 is formed (S805, S806).
Next, the upper shield cap 14 and the upper shield film 15 are formed (S807, S808). Thereafter, a recording head portion as shown in FIG. 6 is formed to complete the MR head (S809).

The second step of the method for producing a magnetoresistive element of the present invention must be performed after the step of forming a recording head section (S809) when applied to the production of an MR head. At this time, since the direction of easy magnetization of the free layer 5 is also affected in the second step, it is necessary to reorient the direction of easy magnetization of the free layer to the direction of FIG. 1 after the second step.

In the MR element section, the axis of easy magnetization of the second ferromagnetic film (free layer) 6 shown in FIGS. 1 and 2 is detected in order to suppress the generation of Barkhausen noise at the time of magnetization reversal of the soft magnetic film. It is preferable that it is configured to be substantially perpendicular to the direction of the signal magnetic field to be performed.

[0037]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a magnetoresistive element according to the present invention will be described below with reference to specific examples.

(Example 1) First, after the inside of the sputtering film forming apparatus was evacuated to 1 × 10 ⁻⁸ Torr or less, an Ar gas was flowed so as to be 1 × 10 ⁻³ Torr, and the gas was drawn on a Si substrate. A magnetoresistive element having the configuration of FIG. 2B was formed.
At this time, a fixed magnetic field of about 100 Oe was applied to the substrate, and the direction of the magnetic field was rotated by 90 degrees before the nonmagnetic film 4 was formed.
The film formation temperature is room temperature. In this case, the underlayer 6 is not particularly used, and the α-Fe ₂ O ₃ film, 3-1,
As a ferromagnetic film 3-3, a Co _0.9 Fe _0.1 film (composition is shown by an atomic ratio; the same applies hereinafter), and as a nonmagnetic film 3-2, R
u, Cu as the nonmagnetic film 4 and Co _0.9 Fe as the free layer
_{A 0.1} / Ni _0.8 Fe _0.2 film was used. The composition of the film is shown below. Si / α-Fe ₂ O ₃ (20) / Co _0.9 Fe _0.1 (2) /
_{Ru (0.7) / Co 0. 9} Fe 0.1 (2) / Cu (2) /
Co _0.9 Fe _0.1 (1) / Ni _0.8 Fe _0.2 (5) / Ta
(3) Here, the configuration is written in the order of formation in the order of Si or lower of the substrate. The thickness in parentheses is in nm. The thus prepared MR element was heat-treated using a heat treatment apparatus in a vacuum magnetic field. First, the inside of the device container containing the MR element
After evacuation to 0 ^-5 Torr or less, the ferromagnetic film 3
A magnetic field of 5 Oe to 10,000 Oe was applied in an easy magnetization direction of -1, and the temperature was kept at 270 ° C for 2 hours and cooled to 80 ° C. The MR element was evaluated by a four-terminal method by applying a magnetic field of about 500 Oe in the direction of H in FIG. 1 at room temperature. Table 1 shows the results.

[0039]

[Table 1]

From the results shown in Table 1, it can be considered that in the case of A where no magnetic field is applied, the magnetization direction of the fixed layer is almost random and the MR ratio is greatly reduced. On the other hand, it is considered that the magnetization direction of the fixed layer is disturbed even when an incomplete magnetic field such as E, F, or G is applied. This is due to Co _0.9 via Ru in a magnetic field of about 5 kOe.
This is probably because the antiferromagnetic coupling of the _Fe0.1 layer is strong and it is difficult to saturate the _Fe0.1 layer. 10 like H
When a large magnetic field of about 000 Oe is applied, two layers of Co _0.9
It seems that the Fe _0.1 layer is almost saturated and the MR ratio is E, F,
Although larger than G, large equipment is required to apply a large magnetic field, which leads to an increase in cost.
On the other hand, in Examples B, C, and D of the present invention, since the heat treatment is performed using the small magnetic field without forcibly saturating the fixed layer and in the anti-parallel state, the magnetization of the fixed layer can be aligned and large. An MR ratio is obtained.

Next, an MR head as shown in FIG. 3 was prepared by the method as shown in FIG. 8 using the magnetoresistive element having the above-mentioned structure, and its characteristics were evaluated.

That is, as shown in FIG. 8, Al ₂ O ₃ −
After performing an appropriate process on the TiC substrate, a Ni _0.8 Fe _0.2 film is formed as the lower shield film 10 (S801).
Further, after forming an Al ₂ O ₃ film as the lower gap shield 11 (S802), a magnetoresistive element having the above configuration is formed as the MR element section 9 (S803). Next, M
After patterning the R element portion 9 as shown in FIG.
804), a Co-Pt film as the hard bias part 12,
A Cr / Au film is formed as the lead film 13 (S80)
5, S806). Next, an Al ₂ O ₃ film is used as the upper shield cap 14, and Ni _0.8 Fe _{0.2 is used} as the upper shield film 15.
A film is formed (S807, S808). Thereafter, a recording head portion as shown in FIG. 6 is formed to complete the MR head (S809).

Anisotropy was imparted to the fixed layer of the magnetoresistive head thus prepared in the same manner as in the magnetoresistive element shown in Table 1. Further, in order to impart anisotropy to the free layer, a magnetic field of 100 Oe was applied at about 200 ° C. in a direction perpendicular to the fixed layer, and heat treatment was performed. Further, in order to impart anisotropy to the hard bias portion, a magnetic field of about 5 kOe was applied at room temperature in the direction of easy magnetization of the free layer. MR created in this way
The output of the head was evaluated by applying an AC magnetic field of about 50 Oe in parallel with the magnetization direction of the fixed layer. The results are shown in Table 1 as relative values to Comparative Example A. Example B of the present invention,
It can be seen that C and D have higher outputs than the comparative example.

[0044]

As described above, according to the present invention, the magnetization of the fixed layer can be aligned by a simple method,
It is possible to easily produce a magnetoresistive element having a high ratio and high output.

[Brief description of the drawings]

FIG. 1 is a view showing an easy magnetization direction of a magnetic layer of a magnetoresistive element of the present invention.

FIG. 2 is a schematic view of a cross section of another magnetoresistive element according to the present invention.

FIG. 3 is a diagram showing an example of a cross-sectional view of a magnetoresistive head according to the present invention.

FIG. 4 is a three-dimensional view of the MR head of the present invention.

FIG. 5 is a cross-sectional view of an MR head and a magnetic disk of the present invention.

FIG. 6 is a cross-sectional view of a recording head-integrated MR head of the present invention.

FIG. 7 is a sectional view of another MR head of the present invention.

FIG. 8 is an example of a flowchart showing a manufacturing process of the MR head of the present invention.

FIG. 9 is a configuration example of another MR head of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Magnetization rotation suppression layer 3 Fixed layer 4 Nonmagnetic layer 5 Free layer 6 Underlayer 9 MR element part 10 Lower shield 11 Lower shield gap 12 Hard bias part 13 Lead part 14 Upper shield gap 15 Upper shield 16 Upper recording core

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsuo Satomi 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. Term (reference) 5D034 BA04 DA07

Claims (3)

[Claims] 1. A magnetic layer (free layer) that is easily magnetized and rotated by an external magnetic field on a non-magnetic substrate, and is easily magnetized by an external magnetic field provided separately from the free layer via the non-magnetic layer. A first step of forming a magnetoresistive element composed of a non-rotating magnetic layer (fixed layer) and a magnetization rotation suppressing layer provided for the purpose of suppressing magnetization rotation of the fixed layer; Second direction controlling the magnetization direction of the
In the method for manufacturing a magnetoresistive effect element comprising the steps of:
A method for manufacturing a magnetoresistive element, comprising: controlling a magnetization easy direction of a fixed layer by applying a magnetic field of 10 Oe to 200 Oe while maintaining a temperature of 200 ° C. to 300 ° C. 2. The method according to claim 1, wherein said fixed layer is a laminated ferrimagnetic layer. 3. The method according to claim 1, wherein the magnitude of the applied magnetic field is not less than 20 Oe and not more than 100 Oe.