JP2001044336A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JP2001044336A JP2001044336A JP21082599A JP21082599A JP2001044336A JP 2001044336 A JP2001044336 A JP 2001044336A JP 21082599 A JP21082599 A JP 21082599A JP 21082599 A JP21082599 A JP 21082599A JP 2001044336 A JP2001044336 A JP 2001044336A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor chip
- viscosity
- viscosity resin
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体チップのフ
リップチップ実装構造に関し、さらに具体的には、磁気
ディスク装置内部に搭載されるリードライト用のプリン
ト基板またはヘッドスライダ支持用のサスペンションに
取り付ける半導体チップのフリップチップ実装構造に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip-chip mounting structure of a semiconductor chip, and more specifically, to a semiconductor mounted on a read / write printed board or a head slider supporting suspension mounted inside a magnetic disk drive. The present invention relates to a flip-chip mounting structure of a chip.
【0002】磁気ディスク装置内部に使用される電子部
品は、ヘッドクラッシュなどの原因となる塵埃の発生を
伴わないことが要求される。一方、磁気ディスク装置
は、大記憶容量化および高速処理化のために書き込み周
波数を上げることが求められており、信号伝送経路のイ
ンダクタンスおよび静電容量を小さくする必要がある。
このためには、半導体装置を磁気ヘッドスライダの近く
に搭載することが大切な要件であるため、小さなエリア
に実装できるフリップチップ実装の採用が検討されてい
る。2. Description of the Related Art It is required that electronic components used inside a magnetic disk drive do not generate dust which causes a head crash or the like. On the other hand, a magnetic disk device is required to increase a writing frequency for a large storage capacity and a high speed processing, and it is necessary to reduce an inductance and a capacitance of a signal transmission path.
For this purpose, since it is an important requirement to mount the semiconductor device near the magnetic head slider, adoption of flip chip mounting, which can be mounted in a small area, is being studied.
【0003】しかし、フリップチップ構造で半導体チッ
プのシリコン部分が露出していると、その端面から発塵
する恐れがあるため、発塵対策を講じることが不可欠の
条件となっている。However, if the silicon portion of the semiconductor chip is exposed in the flip chip structure, dust may be generated from the end face of the silicon chip. Therefore, it is indispensable to take measures against dust generation.
【0004】[0004]
【従来の技術】情報化社会の進展とともに、コンピュー
タの外部記憶装置としての磁気ディスク装置(以降HD
Dと記す)の重要度はますます高まり、その記録密度は
年々著しい向上が図られている。2. Description of the Related Art With the development of the information society, a magnetic disk device (hereinafter referred to as an HD) as an external storage device of a computer has been developed.
D) has become increasingly important, and its recording density has been significantly improved year by year.
【0005】さらにHDDは、軽薄短小化の流れから小
型化と合わせて大容量化が求められており、この目的は
磁気ディスク媒体の小径化と面記録密度の向上によって
達成されるものである。[0005] Furthermore, HDDs are required to have a large capacity in addition to miniaturization from the trend of miniaturization, and this purpose is achieved by reducing the diameter of the magnetic disk medium and improving the areal recording density.
【0006】ここで、面記録密度は磁気ディスク媒体の
円周方向の線記録密度と半径方向のトラック密度とから
なっているので、両方または一方を向上させることによ
って高い面記録密度を得ることができる。Here, since the areal recording density is composed of the circumferential linear recording density and the radial track density of the magnetic disk medium, it is possible to obtain a high areal recording density by improving both or one of them. it can.
【0007】しかし、その実現のためには磁気ヘッドの
低浮上量化が不可欠であり、これを実現・維持するため
にはHDD内部での塵埃の発生があってはならない。However, it is essential to reduce the flying height of the magnetic head in order to achieve this, and to achieve and maintain this, there must be no generation of dust inside the HDD.
【0008】すなわちHDDの稼働中に塵埃が発生する
と、その塵埃が磁気ヘッドの浮上量を一定に保っている
空気軸受部に入り込み、このことによって磁気ヘッドの
浮上姿勢を不安定なものとし、最悪の場合には記録され
ている情報を破壊してしまういわゆるヘッドクラッシュ
に至るという問題がある。That is, when dust is generated during the operation of the HDD, the dust enters the air bearing portion which keeps the flying height of the magnetic head constant, thereby making the flying posture of the magnetic head unstable and the worst case. In such a case, there is a problem that a so-called head crash which destroys recorded information is caused.
【0009】したがって、その対策の一つとして、半導
体装置からの発塵を防止するために、磁気ヘッドスライ
ダの近くに搭載する半導体チップを樹脂でコーティング
して封止する技術が採用されている。Therefore, as one of the measures, a technique of coating a semiconductor chip mounted near a magnetic head slider with a resin and sealing it in order to prevent dust from being generated from the semiconductor device has been adopted.
【0010】半導体チップを樹脂でコーティングして封
止する技術としては、ワイヤボンディング方式と呼ばれ
るものがある。As a technique for coating and sealing a semiconductor chip with a resin, there is a technique called a wire bonding method.
【0011】すなわち、基板面上に半導体チップを電極
搭載面を上向きに載せ、電極と基板面上の配線パターン
とを結合する方法である。ここでは封止樹脂をディスペ
ンス方式または印刷方式を用いてオーバコートし、これ
を固化するのが一般的であった。In other words, there is a method in which a semiconductor chip is mounted on a substrate surface with the electrode mounting surface facing upward, and the electrodes and the wiring patterns on the substrate surface are connected. Here, it has been common practice to overcoat the sealing resin using a dispense method or a printing method and to solidify the overcoat.
【0012】しかしながら、半導体チップを磁気ヘッド
スライダの近くに搭載する必要があるため、小さな領域
に実装できる方式として、ワイヤボンディング実装方式
にかわってフリップチップ実装方式の採用が検討され、
実用化されつつある。However, since the semiconductor chip needs to be mounted near the magnetic head slider, adoption of a flip chip mounting method instead of the wire bonding mounting method has been studied as a method capable of mounting in a small area.
It is being put to practical use.
【0013】例えば、プリント配線板に半導体チップを
フリップチップ実装する場合に、封止樹脂の剥離、亀裂
等の発生を防止することを目的とした封止技術が開示さ
れている(例えば、特開平10−199936)。For example, when a semiconductor chip is mounted on a printed wiring board by flip-chip bonding, a sealing technique has been disclosed for the purpose of preventing the peeling, cracking, etc. of the sealing resin from occurring (for example, Japanese Patent Application Laid-Open No. HEI 9-110572). 10-199936).
【0014】図3は従来のフレキシブルプリント配線板
への半導体チップのフリップチップ実装を示す断面図で
ある。ここでは、フレキシブルプリント配線板に半導体
チップを実装した場合の封止用樹脂の剥離、亀裂等の発
生を防止するために、フレキシブルプリント配線板と半
導体チップとの間を半導体チップ固定樹脂で封止し、さ
らに半導体チップの上面から側面にわたって絶縁性樹脂
で覆って保護することにより強度が大きくなり、あわせ
てフレキシブルプリント配線板が曲がりにくくなるの
で、封止用樹脂が剥離したり亀裂が発生したりすること
がなくなる。FIG. 3 is a sectional view showing a conventional flip-chip mounting of a semiconductor chip on a flexible printed wiring board. Here, in order to prevent the sealing resin from peeling and cracking when the semiconductor chip is mounted on the flexible printed wiring board, the space between the flexible printed wiring board and the semiconductor chip is sealed with a semiconductor chip fixing resin. In addition, the strength is increased by covering and protecting the semiconductor chip from the upper surface to the side surface with an insulating resin, and at the same time, the flexible printed wiring board is less likely to bend, so that the sealing resin may peel or crack. Will not be done.
【0015】このとき、絶縁性樹脂は半導体チップ固定
樹脂よりも高粘度樹脂とすることで、形状保持性が良
く、供給したときの状態に近い形状が得られるので、剥
離や亀裂等の破壊の危惧が解決される。At this time, since the insulating resin is made of a resin having a higher viscosity than that of the semiconductor chip fixing resin, the shape retaining property is good and a shape close to the state when supplied is obtained. Worries are resolved.
【0016】また、半導体チップの実装構造として、半
導体チップの側面に絶縁性樹脂を塗布する技術が開示さ
れている(例えば特開平11−40709)。As a mounting structure of a semiconductor chip, a technique of applying an insulating resin to the side surface of the semiconductor chip has been disclosed (for example, Japanese Patent Application Laid-Open No. H11-40709).
【0017】図4は従来の半導体チップのフリップチッ
プ実装構造を示す断面図である。すなわち、基板上にフ
リップチップ実装された半導体チップの側面に絶縁性樹
脂が塗布されており、基板上の半導体チップに対向しな
い部分に制御用電極が設けられている。そして半導体チ
ップの周囲および制御用電極の上面を覆うように導電性
樹脂が塗布されることにより、半導体装置の誤動作が起
こり難い構造とするものである。FIG. 4 is a sectional view showing a conventional flip chip mounting structure of a semiconductor chip. That is, an insulating resin is applied to a side surface of a semiconductor chip mounted on a substrate by flip-chip mounting, and a control electrode is provided on a portion of the substrate that does not face the semiconductor chip. Then, a conductive resin is applied so as to cover the periphery of the semiconductor chip and the upper surface of the control electrode, so that the semiconductor device is less likely to malfunction.
【0018】この構造とすることにより、雑音と外部放
射の遮断性に優れ、半導体装置の裏面での雑音の放射と
混入が起こりにくく、静電気に弱い構造の半導体装置で
も静電破壊が起こり難い実装構造が実現できるようにな
った。By adopting this structure, the semiconductor device is excellent in blocking noise and external radiation, hardly emits and mixes noise on the back surface of the semiconductor device, and is hardly damaged by static electricity even in a semiconductor device having a structure weak to static electricity. The structure can be realized.
【0019】[0019]
【発明が解決しようとする課題】しかし、フレキシブル
プリント配線板と半導体チップとの間を半導体チップ固
定樹脂で封止し、さらに半導体チップの上面から側面に
わたって絶縁性樹脂で覆うのは、形状保持性を良くし、
剥離や亀裂等の破壊を防止することが目的であり、この
被覆を行うためには絶縁性樹脂の厚さを厚くせざるを得
ず、したがって大きな実装エリアが必要になるという問
題がある。However, sealing between the flexible printed wiring board and the semiconductor chip with a semiconductor chip fixing resin and further covering the semiconductor chip from the top surface to the side surfaces with an insulating resin is a problem of shape retention. Better
The purpose is to prevent destruction such as peeling or cracking, and in order to perform this coating, the thickness of the insulating resin must be increased, and thus there is a problem that a large mounting area is required.
【0020】また、フリップチップ実装方式はワイヤボ
ンディング実装方式よりも実装スペースを小さくするこ
とが目的であり、半導体装置からの塵埃の発生を防止す
ることを主旨とするものではなかった。The flip-chip mounting method aims at making the mounting space smaller than that of the wire bonding mounting method, and does not aim at preventing generation of dust from the semiconductor device.
【0021】したがって、半導体装置からの塵埃の発生
を防止するためのオーバコートをするに際し、半導体チ
ップのコーナ部分が露出しないように封止用樹脂を塗布
する方式では、半導体装置より大きな実装エリアが必要
となる。Therefore, in a method of applying a sealing resin so that corner portions of a semiconductor chip are not exposed when overcoating for preventing generation of dust from a semiconductor device, a mounting area larger than that of the semiconductor device is required. Required.
【0022】また、実装エリアを小さくするために封止
用樹脂の塗布量を少なくすると、半導体チップのコーナ
部が完全には被覆されずに、露出したままの状態となる
部分が残存し、発塵の原因となってしまう懸念がある。If the amount of the sealing resin applied is reduced in order to reduce the mounting area, the corners of the semiconductor chip are not completely covered, and a portion that remains exposed remains. There is a concern that it may cause dust.
【0023】すなわち、塗布方式で用いる封止用樹脂の
粘度が半導体装置の被覆性の良し悪しに大きく影響し、
樹脂の粘度が低いと薄く被覆することができるが、半導
体チップのコーナを完全には被覆することができずに一
部が露出してしまい、また、封止用樹脂の粘度が高いと
半導体チップのコーナは完全に被覆することができる
が、封止用樹脂の厚みが厚くなってしまうことが判明し
た。That is, the viscosity of the sealing resin used in the coating method greatly affects the quality of the covering property of the semiconductor device,
If the viscosity of the resin is low, it can be thinly coated, but the corners of the semiconductor chip cannot be completely covered and a part of it will be exposed. Can be completely covered, but it has been found that the thickness of the sealing resin is increased.
【0024】したがって、実装エリアを小さく維持する
と共に、半導体チップが封止用樹脂で完全に被覆される
半導体装置を得ることを目的とする。Accordingly, it is an object of the present invention to obtain a semiconductor device in which a mounting area is kept small and a semiconductor chip is completely covered with a sealing resin.
【0025】[0025]
【課題を解決するための手段】本発明者が課題を解決す
るために鋭意検討を行った結果、上記の課題は、基板に
搭載された半導体チップの上面が高粘度樹脂で封止され
ており、該高粘度樹脂の上と、該半導体チップの側面と
が該高粘度樹脂より粘度の低い低粘度樹脂で封止されて
いる半導体装置とすることによって解決される。As a result of the inventor's intensive studies to solve the problem, the above problem has been solved because the upper surface of a semiconductor chip mounted on a substrate is sealed with a high-viscosity resin. The problem is solved by providing a semiconductor device in which the high-viscosity resin and the side surface of the semiconductor chip are sealed with a low-viscosity resin having a lower viscosity than the high-viscosity resin.
【0026】すなわち、本発明の半導体装置において
は、まず基板に搭載された半導体チップの上面を高粘度
樹脂を用いて封止するようにしている。こうすることに
よって半導体チップの上面およびコーナ部を高粘度樹脂
で被覆できるので形状が維持できる。That is, in the semiconductor device of the present invention, first, the upper surface of the semiconductor chip mounted on the substrate is sealed using a high-viscosity resin. By doing so, the upper surface and the corner portion of the semiconductor chip can be covered with the high-viscosity resin, so that the shape can be maintained.
【0027】続いて高粘度樹脂の上と半導体チップの側
面とを高低粘度樹脂より粘度の低い点粘度樹脂を用いて
封止するようにしている。Subsequently, the upper portion of the high-viscosity resin and the side surface of the semiconductor chip are sealed with a point-viscosity resin having a lower viscosity than the high-low viscosity resin.
【0028】こうすることによって半導体チップの側面
部を薄い膜で被覆できるので、実装エリアを最小に保っ
た状態で半導体チップの上面および側面を完全に封止で
きる。By doing so, the side surface of the semiconductor chip can be covered with a thin film, so that the top and side surfaces of the semiconductor chip can be completely sealed while the mounting area is kept to a minimum.
【0029】また、上記の課題は、基板に搭載された半
導体チップの上面を、高粘度樹脂と高粘度樹脂より粘度
の低い低粘度樹脂とをスクリーン印刷法によって被覆す
る工程と、該高粘度樹脂と該低粘度樹脂とを加熱する工
程とを含む半導体装置の製造方法とすることで解決され
る。Further, the above-mentioned problem is caused by a step of coating the upper surface of a semiconductor chip mounted on a substrate with a high-viscosity resin and a low-viscosity resin having a lower viscosity than the high-viscosity resin by a screen printing method. And a step of heating the low-viscosity resin.
【0030】すなわち、上記本発明の半導体装置の製造
方法においては、基板に搭載された半導体チップの上面
を高粘度樹脂で封止し、高粘度樹脂で封止した半導体チ
ップの上面と半導体チップの側面とを高粘度樹脂より粘
度の低い低粘度樹脂で封止するようにしている。こうす
ることで半導体チップの上面およびコーナ部を高粘度樹
脂で被覆できるので形状が維持できる半導体装置とする
ことができ、さらに高粘度樹脂で封止した半導体チップ
の上面と半導体チップの側面とを低粘度樹脂の薄い膜で
被覆できるので実装エリアを最小に保った状態で半導体
チップの上面および側面を完全に封止する半導体装置と
することができる。That is, in the method of manufacturing a semiconductor device according to the present invention, the upper surface of the semiconductor chip mounted on the substrate is sealed with a high-viscosity resin, and the upper surface of the semiconductor chip sealed with the high-viscosity resin and the semiconductor chip. The side surfaces are sealed with a low-viscosity resin having a lower viscosity than the high-viscosity resin. By doing so, the upper surface and the corner of the semiconductor chip can be covered with the high-viscosity resin, so that the semiconductor device can be maintained in shape, and the upper surface of the semiconductor chip sealed with the high-viscosity resin and the side surface of the semiconductor chip can be separated. Since the semiconductor device can be covered with a thin film of a low-viscosity resin, a semiconductor device in which the upper surface and side surfaces of the semiconductor chip are completely sealed while the mounting area is kept to a minimum can be obtained.
【0031】さらに、上記課題は、テープ上に積層され
た高粘度樹脂と高粘度樹脂より粘度の低い低粘度樹脂と
を半導体チップの上面に乗せる工程と、該高粘度樹脂と
該低粘度樹脂とを加熱する工程とを含む半導体装置の製
造方法とすることで解決される。Further, the above object is to provide a step of placing a high-viscosity resin laminated on a tape and a low-viscosity resin having a lower viscosity than the high-viscosity resin on the upper surface of a semiconductor chip; And a step of heating the semiconductor device.
【0032】すなわち、上記本発明の半導体装置の製造
方法においては、基板に搭載された半導体チップの上面
を高粘度樹脂で封止し、高粘度樹脂で封止した半導体チ
ップの上面と半導体チップの側面とを高粘度樹脂より粘
度の低い樹脂で封止するようにしている。こうすること
で半導体チップの上面およびコーナ部を高粘度樹脂で被
覆できるので形状が維持できる半導体装置とすることが
でき、さらに高粘度樹脂で封止した半導体チップの上面
と半導体チップの側面とを低粘度樹脂の薄い膜で被覆で
きるので実装エリアを最小に保った状態で半導体チップ
の上面および側面を完全に封止する半導体装置とするこ
とができる。That is, in the method of manufacturing a semiconductor device according to the present invention, the upper surface of the semiconductor chip mounted on the substrate is sealed with a high-viscosity resin, and the upper surface of the semiconductor chip sealed with the high-viscosity resin and the semiconductor chip. The sides are sealed with a resin having a lower viscosity than the high-viscosity resin. By doing so, the upper surface and the corner of the semiconductor chip can be covered with the high-viscosity resin, so that the semiconductor device can be maintained in shape, and the upper surface of the semiconductor chip sealed with the high-viscosity resin and the side surface of the semiconductor chip can be separated. Since the semiconductor device can be covered with a thin film of a low-viscosity resin, a semiconductor device in which the upper surface and side surfaces of the semiconductor chip are completely sealed while the mounting area is kept to a minimum can be obtained.
【0033】[0033]
【発明の実施の形態】以下、実施例により本発明をさら
に詳細に説明するが、本発明はこれらに限定されるもの
ではない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited thereto.
【0034】図1は本発明による一実施例のスクリーン
印刷法による半導体装置の製造方法を示す断面図であ
り、また、図2は本発明による一実施例の片面に封止用
樹脂を配したテープによる半導体装置の製造方法を示す
断面図である。図中、1は基板を、3はパンプを、6は
半導体チップを、9は半導体チップ固定樹脂を、11は
印刷版を、12は高粘度樹脂を、13は低粘度樹脂を、
14は片面に封止用樹脂を配したテープを、15は封止
用樹脂を、16はボンディングヘッドを、17はヒータ
を、20は半導体装置をそれぞれ示している。FIG. 1 is a cross-sectional view showing a method of manufacturing a semiconductor device by a screen printing method according to one embodiment of the present invention. FIG. 2 is a sectional view showing a sealing resin disposed on one surface of one embodiment according to the present invention. It is sectional drawing which shows the manufacturing method of the semiconductor device by a tape. In the figure, 1 is a substrate, 3 is a pump, 6 is a semiconductor chip, 9 is a semiconductor chip fixing resin, 11 is a printing plate, 12 is a high viscosity resin, 13 is a low viscosity resin,
Reference numeral 14 denotes a tape having a sealing resin disposed on one surface, 15 denotes a sealing resin, 16 denotes a bonding head, 17 denotes a heater, and 20 denotes a semiconductor device.
【0035】なお、図中に示す構成要素は、従来例を示
す図3および4と対応するものには同一符号が付してあ
る。The components shown in the drawings correspond to those shown in FIGS. 3 and 4 showing the conventional example, and are denoted by the same reference numerals.
【0036】〔実施例1〕基板1に半導体チップ6を、
図示していないバンプを介して基板1の回路パターンと
導通をとるようにして半導体チップ固定樹脂9で固定す
る。Example 1 A semiconductor chip 6 was mounted on a substrate 1
The semiconductor chip is fixed with the semiconductor chip fixing resin 9 so as to be electrically connected to the circuit pattern of the substrate 1 via bumps (not shown).
【0037】続いて図1に示したように、ステンレス鋼
で作製した厚さ50μmの印刷版11を、印刷版11の
下面の高さが半導体チップ6の上面と同じ高さになるよ
うに図示していない治具を用いて位置合わせする。そし
て通常のスクリーン印刷法により、例えばデクスター社
製の型格LP−F8032の高粘度樹脂12を用いて印
刷する。ここで用いたLP−F8032の粘度は常温で
10,000〜100,000cpsである。Subsequently, as shown in FIG. 1, a printing plate 11 made of stainless steel and having a thickness of 50 μm was placed such that the height of the lower surface of the printing plate 11 was the same as the upper surface of the semiconductor chip 6. Align using a jig not shown. Then, printing is performed by a normal screen printing method using, for example, the high-viscosity resin 12 of model LP-F8032 manufactured by Dexter. The viscosity of LP-F8032 used here is 10,000 to 100,000 cps at room temperature.
【0038】続いて、同じ印刷版11を同じように位置
合わせ後、通常のスクリーン印刷法により例えばスリー
ボンド社製の型格TB3062Cの、高粘度樹脂12よ
り粘度の低い低粘度樹脂13を用いて印刷する。ここで
用いたTB3062Cの粘度は常温で100〜5,00
0cpsである。Subsequently, after the same printing plate 11 is similarly positioned, printing is performed by a normal screen printing method using a low-viscosity resin 13 having a lower viscosity than the high-viscosity resin 12 of, for example, Model TB3062C manufactured by ThreeBond. I do. The viscosity of TB3062C used here was 100 to 5,000 at room temperature.
0 cps.
【0039】こうして印刷法で形成した高粘度樹脂12
および低粘度樹脂13を、例えば恒温槽を用いて例えば
150℃で2時間保持することによって硬化させる。The high-viscosity resin 12 thus formed by the printing method
The low-viscosity resin 13 is cured by holding it at, for example, 150 ° C. for 2 hours using a thermostat.
【0040】これらの工程を経る半導体装置の製造方法
とすることによって、半導体チップ6の上面およびコー
ナ部を高粘度樹脂12で被覆できるので形状が維持で
き、高粘度樹脂12では被覆ができない半導体チップ6
の側面を、上面と共に高粘度樹脂12より粘度の低い低
粘度樹脂13の薄い膜で被覆できるので、実装エリアを
最小に保った状態で半導体チップ6の上面および側面を
完全に封止した半導体装置とすることができる。According to the method of manufacturing a semiconductor device through these steps, the upper surface and the corner portion of the semiconductor chip 6 can be covered with the high-viscosity resin 12 so that the shape can be maintained, and the semiconductor chip cannot be covered with the high-viscosity resin 12. 6
Can be covered with a thin film of the low-viscosity resin 13 having a lower viscosity than the high-viscosity resin 12 together with the upper surface, so that the top and side surfaces of the semiconductor chip 6 are completely sealed while keeping the mounting area to a minimum. It can be.
【0041】本実施例では半導体チップ6の上面および
コーナ部を高粘度樹脂12で被覆し、高粘度樹脂12の
上面と高粘度樹脂12では被覆できない半導体チップ6
の側面とを高粘度樹脂より粘度の低い低粘度樹脂13で
被覆したが、半導体チップ6の上面および側面を高粘度
樹脂より粘度の低い低粘度樹脂13で被覆し、低粘度樹
脂13で被覆した半導体チップ6の上面を高粘度樹脂1
2で封止しても半導体チップ6の上面および側面を封止
することができる。しかし、この方法では半導体チップ
のコーナ部の封止が不十分になる懸念がある。 〔実施例2〕まず、実施例1と同じように、基板1に半
導体チップ6を、図示していないバンプを介して基板1
の回路パターンと導通をとるようにして半導体チップ固
定樹脂9で固定する。In this embodiment, the upper surface and the corner portion of the semiconductor chip 6 are covered with the high-viscosity resin 12, and the upper surface of the high-viscosity resin 12 and the semiconductor chip 6 that cannot be covered with the high-viscosity resin 12.
Was coated with a low-viscosity resin 13 having a lower viscosity than the high-viscosity resin, but the upper surface and side surfaces of the semiconductor chip 6 were covered with a low-viscosity resin 13 having a lower viscosity than the high-viscosity resin, and were covered with the low-viscosity resin 13. High-viscosity resin 1 is applied to the upper surface of semiconductor chip 6.
2, the top and side surfaces of the semiconductor chip 6 can be sealed. However, in this method, there is a concern that the sealing of the corner portion of the semiconductor chip becomes insufficient. [Embodiment 2] First, as in Embodiment 1, a semiconductor chip 6 is mounted on a substrate 1 via bumps (not shown).
And is fixed with the semiconductor chip fixing resin 9 so as to conduct with the circuit pattern.
【0042】続いて図2に示したように、片面に封止用
樹脂15を配したテープ14を、テープ14を封止用樹
脂15を下向きにして半導体チップ6の上面に搭載し、
その上に図示していない治具で位置合わせをしたヒータ
17を取り付けたボンディングヘッド16を配置する。Subsequently, as shown in FIG. 2, a tape 14 having a sealing resin 15 disposed on one side is mounted on the upper surface of the semiconductor chip 6 with the sealing resin 15 facing down,
A bonding head 16 to which a heater 17 positioned by a jig (not shown) is attached is disposed thereon.
【0043】ここで用いる封止用樹脂15は例えばエポ
キシ樹脂をBステージ化したものとし、これをテープの
片面に配置して使用するのが好ましい。そしてヒータ1
7で例えば150℃で2時間の加熱・加圧をすることに
よって片面に配したテープ14上の封止用樹脂15の粘
度が低下して半導体チップ6の上面、コーナ部および側
面に流れ、やがて硬化する。It is preferable that the sealing resin 15 used here is, for example, an epoxy resin which is B-staged, and that this is disposed on one side of the tape and used. And heater 1
For example, by heating and pressurizing at 150 ° C. for 2 hours in 7, the viscosity of the sealing resin 15 on the tape 14 arranged on one side is reduced, and flows to the upper surface, the corner portion and the side surface of the semiconductor chip 6, and eventually. To cure.
【0044】これらの工程を経る半導体装置の製造方法
とすることによって、半導体チップ6の上面、コーナ部
および側面を封止用樹脂15で封止できる。By adopting a method of manufacturing a semiconductor device through these steps, the upper surface, corner portions and side surfaces of the semiconductor chip 6 can be sealed with the sealing resin 15.
【0045】実装エリアを最小に保った状態で半導体チ
ップ6の上面、コーナ部および側面を完全に封止するた
めには、実施例1と同じように、テープの片面に配した
封止用樹脂15は高粘度樹脂12と高粘度樹脂12より
粘度の低い樹脂13の二層からなるものであることが好
ましい。In order to completely seal the upper surface, corner portions and side surfaces of the semiconductor chip 6 while keeping the mounting area to a minimum, as in the first embodiment, the sealing resin disposed on one side of the tape is used. 15 is preferably composed of two layers of a high-viscosity resin 12 and a resin 13 having a lower viscosity than the high-viscosity resin 12.
【0046】[0046]
【発明の効果】以上説明したように、本発明によれば、
実装エリアを最小に保った半導体チップの上面、コーナ
部および側面が樹脂で完全に封止された半導体装置とす
ることができるので、半導体装置からの塵埃の発生を防
止する効果がある。さらに、本発明の半導体装置の製造
方法とすることによって組立の自動化ラインの構成が容
易となり、ひいてはコストを削減することができる。As described above, according to the present invention,
Since the semiconductor device can be a semiconductor device in which the top surface, corner portions, and side surfaces of the semiconductor chip are completely sealed with resin while the mounting area is kept to a minimum, there is an effect of preventing generation of dust from the semiconductor device. Further, the method of manufacturing a semiconductor device according to the present invention facilitates the configuration of an automated assembly line, and thus can reduce the cost.
【図1】 本発明による一実施例のスクリーン印刷法に
よる半導体装置の製造方法を示す断面図FIG. 1 is a sectional view showing a method for manufacturing a semiconductor device by a screen printing method according to an embodiment of the present invention.
【図2】 本発明による一実施例の片面に封止用樹脂を
配したテープによる半導体装置の製造方法を示す断面図FIG. 2 is a cross-sectional view showing a method for manufacturing a semiconductor device using a tape having a sealing resin disposed on one side according to one embodiment of the present invention;
【図3】 従来のフレキシブルプリント配線板への半導
体チップのフリップチップ実装を示す断面図FIG. 3 is a cross-sectional view showing a conventional flip-chip mounting of a semiconductor chip on a flexible printed wiring board.
【図4】 従来の半導体チップのフリップチップ実装構
造を示す断面図FIG. 4 is a cross-sectional view showing a conventional flip-chip mounting structure of a semiconductor chip.
1 基板 2 半導体装置電極 3 バンプ 4 回路パターン 6 半導体チップ 7 導電性樹脂 8 絶縁性樹脂 9 半導体チップ固定樹脂 11 印刷版 12 高粘度樹脂 13 低粘度樹脂 14 片面に封止用樹脂を配したテープ 15 封止用樹脂 16 ボンディングヘッド 17 ヒータ 20 半導体装置 DESCRIPTION OF SYMBOLS 1 Substrate 2 Semiconductor device electrode 3 Bump 4 Circuit pattern 6 Semiconductor chip 7 Conductive resin 8 Insulating resin 9 Semiconductor chip fixing resin 11 Printing plate 12 High-viscosity resin 13 Low-viscosity resin 14 Tape with sealing resin arranged on one side 15 Resin for sealing 16 Bonding head 17 Heater 20 Semiconductor device
Claims (3)
高粘度樹脂で封止されており、該高粘度樹脂の上と、該
半導体チップの側面とが該高粘度樹脂より粘度の低い低
粘度樹脂で封止されている半導体装置。An upper surface of a semiconductor chip mounted on a substrate is sealed with a high-viscosity resin, and the upper surface of the high-viscosity resin and the side surface of the semiconductor chip have a lower viscosity than the high-viscosity resin. A semiconductor device sealed with resin.
止する半導体装置の製造方法において、 該半導体チップの上面を、前記高粘度樹脂と該高粘度樹
脂より粘度の低い低粘度樹脂とのそれぞれをスクリーン
印刷法によって被覆する工程と、 該高粘度樹脂と該低粘度樹脂とを加熱する工程とを含む
半導体装置の製造方法。2. A method of manufacturing a semiconductor device in which a semiconductor chip mounted on a substrate is sealed with a resin, wherein an upper surface of the semiconductor chip is formed of the high-viscosity resin and a low-viscosity resin having a lower viscosity than the high-viscosity resin. And a step of heating the low-viscosity resin and the high-viscosity resin.
止する半導体装置の製造方法において、 テープ上に積層された前記高粘度樹脂と該高粘度樹脂よ
り粘度の低い低粘度樹脂とを該半導体チップの上面に乗
せる工程と、 該高粘度樹脂と該低粘度樹脂とを加熱する工程とを含む
半導体装置の製造方法。3. A method of manufacturing a semiconductor device for sealing a semiconductor chip mounted on a substrate with a resin, wherein the high-viscosity resin laminated on a tape and a low-viscosity resin having a lower viscosity than the high-viscosity resin are combined with each other. A method of manufacturing a semiconductor device, comprising: a step of placing the chip on an upper surface of a chip; and a step of heating the high-viscosity resin and the low-viscosity resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21082599A JP2001044336A (en) | 1999-07-26 | 1999-07-26 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21082599A JP2001044336A (en) | 1999-07-26 | 1999-07-26 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001044336A true JP2001044336A (en) | 2001-02-16 |
Family
ID=16595752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21082599A Withdrawn JP2001044336A (en) | 1999-07-26 | 1999-07-26 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001044336A (en) |
-
1999
- 1999-07-26 JP JP21082599A patent/JP2001044336A/en not_active Withdrawn
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