JP2001043957A - Heating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating device superior in the soaking characteristic, and capable of preventing the electric short caused by the attachment of a reaction product, and easily cleaning an attached matter by comprising a plurality of electrodes for supplying the electric power to a disc-shaped heater element, and approximately equally distributing the electrodes within a specific area of the heater element. SOLUTION: Electrodes 2 are approximately equally distributed on an area defined by a concentric circle satisfying that a distance R2 from a center of a disc-shaped heater element 1 is 0.5 R1 when a radius of the disc-shaped heater element 1 is R1, and a concentric circle satisfying that a distance R3 from the center of the heater element 1 is 0.95 R1. For example, four electrodes 2 are mounted, they are arranged at intervals of 90 deg., and two electrodes not adjacent to each other, are connected by a lead wire to be paired to form two pairs of electrodes. The soaking characteristic is ensured by supplying the electric power with the approximately uniform density of current. A groove 3 is formed on an upper surface of the disc-shaped element 1 to increase a value of resistance of the area, whereby a heating value is controlled to improve the soaking characteristic.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating apparatus having excellent heat uniformity and suitable for use in a wafer heating apparatus in a semiconductor manufacturing process.

[0002]

2. Description of the Related Art Conventionally, a spiral pattern heater element using graphite, a graphite-carbon fiber composite material, silicon carbide, or the like has been used for a wafer heating device or the like in a semiconductor manufacturing process.

[Problems] However, this pattern heater element has a complicated shape and is not easy to manufacture, and
Various deposits between adjacent heater elements, for example, CV
In the heating device incorporated in the D device, there is a possibility that a reaction product generated by a reaction with the reactive gas may adhere to the device and cause an electrical short circuit, and it is difficult to clean the attached material. There was an inconvenience.

On the other hand, recently, a plate-like heater element formed of a conductive silicon carbide sintered body has attracted attention. However, it is difficult to secure uniform heat in this plate-like heater element. Small heater elements, for example 30
It is only used in heating equipment that does not require heat uniformity, and is only used for heating equipment that does not require heat uniformity, and cannot be used in semiconductor manufacturing equipment that requires a high degree of heat uniformity. For this purpose, it is necessary to flow a large current, which requires the use of an expensive power supply circuit.

[0005]

DISCLOSURE OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and a technical problem set specifically for solving the problem is that it has excellent heat uniformity. There is no danger of various types of deposits adhering to cause an electrical short circuit, it is easy to clean the deposits, and there is no need to apply a large current to obtain a predetermined heat generation, thereby reducing costs. An object of the present invention is to provide a large-sized heating device which can use a power supply circuit and can be suitably used as a heating device for a semiconductor manufacturing apparatus, for example.

[0006]

Means for Solving the Problems The inventors of the present invention have made intensive studies, and have formed a large plate-like heater element formed in a disc shape or a polygon shape in which a wafer is placed and heated, and these plate-like heater elements are formed. The inventors have found that the above-mentioned problems can be effectively solved by disposing a plurality of power supply electrodes at predetermined positions of the heater element, and have completed the present invention.

That is, a heating device according to a first aspect of the present invention includes at least a disk-shaped heater element having a radius R1 and a plurality of electrodes for supplying electric power to the heater element, wherein the electrode includes the heater element. concentric distance R ₂ from the center of a R ₂ ≒ 0.5 R _1, also the distance R ₃ from the center in the area formed by the concentric circles is R ₃ ≒ 0.95 R _1, substantially uniform is the distribution of It is characterized by having been arranged so that it might become.

A heating device according to a second aspect of the present invention is a polygonal disk-shaped heater element having a length of each side R _4i (i = 1, 2,..., N) and the polygonal disk-shaped heater. At least a plurality of electrodes for supplying power to the element, each of which is concentric and similar to the polygonal heater element and has a length R _5i (i = 1, 2,... n) is R _5i (i = 1,2,
…, N) ≒ 0.5R _4i (i = 1,2,…, n) and the length of one side R _6i (i = 1,2,…, n) is also R _6i (i = 1 , 2,…, n)
分布 0.95 R _4i (i = 1, 2,..., N), wherein the distribution is substantially uniform within a region formed by the polygon.

The heating device according to a third aspect of the present invention is characterized in that a groove for controlling a calorific value is formed on an upper surface and / or a lower surface of the heater element.

The heating device according to claim 4 is
The heater element has a thermal conductivity of 150 W at room temperature.
/ M · K or more and electrical resistivity at room temperature 1-100Ωc
m of silicon carbide sintered body.

The heating device according to claim 5 is characterized in that the polygonal disk-shaped heater element is a square disk-shaped heater element.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following embodiments of the present invention, a case having a plate-like heater element will be described. However, this embodiment is specifically described for better understanding of the gist of the present invention, and does not limit the contents of the invention unless otherwise specified.

[First Embodiment] A heating device provided with a disc-shaped heater element A disc-shaped heater element used in the heating device of the first embodiment is, as shown in FIG.
, For example, four electrodes 2,.
As described in detail below, a groove 3 is provided on the upper surface of the disc-shaped heater element 1 for controlling the amount of heat generation and ensuring uniform heat distribution. ing. The disk-shaped heater element 1 is formed of a silicon carbide sintered body having a thermal conductivity of 150 W / m · K or more at room temperature and an electric resistivity at room temperature of 1 to 100 Ωcm. Hereinafter, the heating device of the first embodiment will be specifically described in detail.

[Heater Element] The disk-shaped heater element 1 is not necessarily limited to a disk shape, but may be, for example, an octagonal disk shape, a hexagonal disk shape, or another regular polygonal disk shape. Includes a polygonal disk-like shape having a substantially circular shape, in which the pattern-shaped notch is substantially not formed in the disk-like heater element, and is thus caused by various kinds of deposits. There is no electrical short circuit, and it is easy to clean the deposit.

Power is supplied to the disc-shaped heater element 1.
Electrode 2 has a radius of the disc-shaped heater element 1 of R₁When
The distance from the center of the disk-shaped heater element 1
R_TwoIs R_Two= 0.5R₁And also from the center
Distance R_ThreeIs R_Three= 0.95 R ₁Is formed by concentric circles
In such a region that the distribution is substantially uniform.
However, the equal sign is not only strictly meaningful, but also approximately
The range may be equal (≒).

A plurality of, for example, four electrodes 2,..., 2 are arranged so that their distributions are substantially equal, and the current density of the flowing current is substantially the same or the difference is small. By supplying power as described above, there is no difference in the amount of heat generated in the entire area of the disc-shaped heater element 1.
Alternatively, the configuration is such that the difference in calorific value is reduced so as to ensure uniform temperature.

As a specific example of an arrangement position of the electrode 2 and a method of supplying electric power, for example, as shown in FIG.
In the case of a disk-shaped heater element having a diameter of m, four electrodes 2,..., 2 are provided at four locations at 90-degree intervals on the circumference of φ180 mm so that the distribution of the electrodes 2 is uniform. The four electrodes 2,..., 2 are connected to each other by a lead wire and are not adjacent to each other to form a pair of electrodes 2, 2, respectively. Connected to a single-phase AC power supply or DC power supply.

The number of electrodes 2 need not be limited to four, but may be a plurality of, for example, two, three, six, or the like. That is, when the number of the electrodes 2 is three, as shown in FIG. 2, three electrodes 2, 2, and 2 are provided at three places at intervals of 120 degrees so that the distribution of the electrodes 2 is uniform, What is necessary is just to connect to a three-phase alternating current power supply via these three electrodes 2,2,2.

When the number of the electrodes 2 is six, as shown in FIG. 3, the six electrodes 2,..., 2 are provided at six places at intervals of 60 degrees so that the distribution of the electrodes 2 becomes uniform. , And two electrodes 2,..., 2 at a maximum separation distance are connected to each other by a lead wire.
2 and electrically connected to a three-phase AC power supply via a total of three pairs of electrodes 2 or 2, or as shown in FIG. Six electrodes 2,..., 2 are provided in six places at intervals of degrees,
The six electrodes 2,..., 2 are not adjacent to each other, and three electrodes that are not at the maximum separation distance are connected to each other by lead wires to form a set of electrodes 2, 2, 2, respectively. It may be electrically connected to a single-phase AC power supply or a DC power supply via a total of two sets of electrodes.

On the upper surface of the disc-shaped heater element 1, a groove 3 is formed to further control the calorific value to further improve the uniformity of heat. The arrangement position and shape of the groove 3 are determined by the process environment in which the heating device is used. That is, in a heating device used in an environment in which heat escapes to the outside of the disc-shaped heater element 1 is large, the groove 3 is provided on the outer periphery, and for example, in the case of the disc-shaped heater element 1 having a diameter of 210 mm. On a circumference of φ160 mm or a circumference of φ190 mm, for example, a width of 2 mm and a depth of 0.2 mm
The annular groove 3 is engraved.

On the other hand, in a heating device used in an environment in which the upper portion of the disc-shaped heater element 1 is, for example, an open system and the temperature of the center portion of the disc-shaped heater element 1 is apt to decrease, the groove 3 is not provided. Around the circumference, for example, φ210 mm
In the case of the disk-shaped heater element 1, an annular groove 3 having a width of 2 mm and a depth of 0.2 mm, for example, is engraved on the circumference of φ 50 mm.

That is, by utilizing the fact that the resistance value of the portion where the groove 3 is engraved becomes higher, the amount of heat generation is controlled so as to further secure the uniform temperature. Whether the groove 3 is to be formed at the position is determined by performing a thermal analysis in consideration of the size of the disc-shaped heater element 1, the atmosphere in which the heating device is used, and the like. The position at which the groove 3 is cut is not limited to the upper surface of the disk-shaped heater element 1 but may be the lower surface or both surfaces.

[Silicon Carbide] In order to further improve the heat uniformity and to use an inexpensive power supply circuit, the disc-shaped heater element 1 must have a thermal conductivity at room temperature. Is preferably formed of a silicon carbide sintered body having a resistivity of 150 W / m · K or more and an electrical resistivity at room temperature of 1 to 100 Ωcm.

The silicon carbide sintered body having the above characteristics can be manufactured, for example, by the following method. That is,
This silicon carbide sintered body has α-type silicon carbide powder having an average particle size of 0.1 to 1 μm and β-type and / or
Or a mixed powder containing amorphous silicon carbide fine powder,
It is obtained by sintering without adding a sintering aid or a conductive component (hereinafter, these are collectively referred to as "auxiliaries").

Here, the α-type silicon carbide powder having an average particle size of 0.1 to 1 μm is not particularly limited, and any commonly used α-type silicon carbide powder can be used. Manufactured products can be used. (A) A method in which graphite and silicon are reacted at 1150 ° C. or higher. (B) A method of reacting graphite and silicon dioxide at 1475 ° C or higher. (C) Silica sand, coke, sawdust, etc. in an electric furnace
A method of reacting at 0 to 2500 ° C.

The α-type silicon carbide powder thus produced and used has an average particle diameter of 0.1 to 1 μm.
It is said. This is because if the particle size is large, the surface stress is reduced, the sintering driving force is reduced, and it becomes difficult to obtain a high-density sintered body.

The average particle diameter of β is less than 0.1 μm.
The type and / or amorphous silicon carbide fine powder is not particularly limited. For example, a raw material gas of a silane compound or a silicon halide and a hydrocarbon, such as monosilane and ethylene, is introduced into plasma in a non-oxidizing atmosphere. It is preferable to use a product obtained by introducing a gas and performing a gas phase reaction while controlling the pressure of the reaction system in the range of 1 atm to 0.1 Torr.

The β-type and / or amorphous silicon carbide fine powder thus obtained has a very good sintering property. A high-density sintered body can be obtained without adding an agent.

Next, the above-mentioned α-type silicon carbide and β-type and / or amorphous silicon carbide are mixed to form a mixture. Here, when mixing the α-type silicon carbide powder and the β-type and / or amorphous silicon carbide fine powder, the mixing amount of the β-type and / or amorphous silicon carbide fine powder is 1 to 30% by weight. % Is preferred.

That is, if the amount of the β-type and / or amorphous silicon carbide fine powder is less than 1% by weight, the effect of mixing the β-type silicon carbide fine powder is not sufficiently exhibited.
0% by weight or more, the electrical resistivity at room temperature is 1 to 10%.
It becomes difficult to control to 0 Ωcm, and the cost is high because β-type and / or amorphous silicon carbide fine powder is synthesized in a gas phase by a plasma CVD method.
This is because the obtained product becomes expensive, and the effect of increasing the sintering density is almost flat at higher than this.

Thereafter, the mixture is heated and further sintered to obtain a target sintered silicon carbide. Here, the heating temperature is preferably from 1800 ° C. to 2400 ° C. As a sintering method, a conventional method such as normal pressure sintering, atmospheric pressure sintering, hot press sintering, or hot isostatic sintering (HIP) can be used. In order to obtain silicon carbide sintering excellent in conductivity, heat conductivity, etc., it is desirable to use a pressure sintering method such as hot press,
In particular, the sintering atmosphere is preferably a vacuum atmosphere, an inert atmosphere, or a reducing gas atmosphere.

The silicon carbide sintered body thus obtained has an electrical resistivity at room temperature of 1 to 100 Ωcm, a thermal conductivity at room temperature of 150 W / m · K or more, and a grain size of 2 to 3 It has a uniform microstructure as small as μm and has no local heat generation.

Further, since the silicon carbide sintered body is sintered without adding an auxiliary agent, it has a very high purity and a heavy metal content of several tens ppm or less, which is a source of semiconductor contamination. Because of its excellent properties, it can be used as a heater element even without any special surface treatment, and its characteristics such as electrical resistivity, thermal conductivity and density are small. Also excellent in nature.

[Second Embodiment] A heating device having a polygonal heater element The polygonal heater element used in the heating device of the second embodiment is not necessarily limited to a strict regular polygonal disk shape. In other words, it is intended to include all polygonal discs in which the heat generating region including the polygonal one in which the shape is distorted is substantially polygonal, and a polygonal disc whose corners are dropped or rounded. Shapes are also included. A plurality of, for example, n electrodes for supplying power to the polygonal disk-shaped heater element are arranged so that their distributions are substantially uniform, and on the upper surface of the polygonal disk-shaped heater element,
A groove for controlling the amount of generated heat and ensuring heat uniformity is formed, and adjustment is performed so that the generated amount of heat in each part becomes uniform. Further, the polygonal disk-shaped heater element has a thermal conductivity of 150 W / m · K or more at room temperature and an electrical resistivity of 1 at room temperature.
It is formed of a silicon carbide sintered body of about 100 Ωcm. Less than,
The heating device according to the second embodiment will be specifically described by taking a square disk-shaped heater element as shown in FIG. 5 as an example.

"Heater Element" The square-plate-shaped heater element 4 is not necessarily limited to a regular square-plate-like shape, but also includes a shape in which the heat-generating region has a substantially quadrangular shape. The pattern-shaped notch portion has a shape that is not substantially formed in the square disk-shaped heater element 4, so that there is no electrical short circuit caused by various kinds of deposits, and it is easy to clean the deposits. Become.

A plurality of, for example, four electrodes 5,..., 5 for supplying electric power to the square-plate-shaped heater element 4 are arranged so that their distributions are substantially uniform, as will be described in detail below. On the upper surface of the heater element 4, a groove 6 is formed to control the amount of heat generated and to secure uniform heat. The square disk heater element 4 is formed of a silicon carbide sintered body having a thermal conductivity at room temperature of 150 W / m · K or more and an electrical resistivity at room temperature of 1 to 100 Ωcm.

The electrode 5 for supplying power to the square-plate-shaped heater element 4 has a length R ₄ of one side of the square-plate-shaped heater element 4, is concentric and similar to the square-plate-shaped heater element 4, and has one side. and square length R ₅ is R ₅ = 0.5 R _4, the length R ₆ of the same one side R ₆ = 0.95 R ₄
Are arranged such that the distribution is substantially uniform in a region formed by a regular square.

A plurality of electrodes, for example, four electrodes are arranged so that their distributions are substantially uniform, and power is supplied so that the current density of the flowing currents is substantially the same or the difference is small. By doing so, there is no difference in the calorific value in the entire area of the square disk-shaped heater element 4, or the calorific value is reduced so that the heat uniformity is ensured.

As a specific example of the arrangement position of the electrodes and the method of supplying power, for example, as shown in FIG. 5, in the case of a square disk-shaped heater element 4 having a side length of 120 mm,
The electrode distribution should be even on the circumference of φ136 mm.
The electrodes 5,..., 5 are provided at four locations at an interval of 0 degrees, and the four electrodes 5,. , 5 are electrically connected to a single-phase AC power supply or a DC power supply via a total of two pairs of electrodes 5, 5.

The number of the electrodes 5 need not be limited to four, but may be plural, for example, two, six or eight. That is, for example, when the number of the electrodes 5 is eight,
As shown in FIG. 6, the distribution of the electrodes is substantially uniform.
Eight electrodes 5,..., 5 are provided at eight locations with an interval of degrees, and these eight electrodes 5,. Electrode 5,
5 may be configured and electrically connected to a single-phase AC power supply or a DC power supply via a total of two sets of electrodes 5 and 5.

On the upper surface of the square disk-shaped heater element 4,
Grooves 6 are provided to further control the amount of heat generated to further improve the uniformity of heat. The arrangement position and shape of the groove 6 are determined by the process environment in which the heating device is used. That is, in a heating device used in an environment where the escape of heat to the outside of the quadrangular disk-shaped heater element 4 is large, the groove 6 is formed on the outer peripheral portion, for example, the length of one side is 120 mm.
In the case of the square disk-shaped heater element 4, an annular groove having a width of 2 mm and a depth of 0.2 mm, for example, is formed on the circumference of φ102 mm.

On the other hand, in the heating device used in an environment in which the upper portion of the square disk-shaped heater element 4 is open and the temperature of the central portion of the square disk-shaped heater element 4 tends to decrease, the groove 6 is formed inside. In the periphery, for example, the length of one side is 120
mm 40 mm in the case of a square-plate-shaped heater element 4
An annular groove 6 having a width of 2 mm and a depth of 0.2 mm, for example, is engraved on the circumference of. The position where the groove 6 is cut is not limited to the upper surface of the plate-shaped heater element, but may be the lower surface, or may be both surfaces.

[Silicon Carbide] In order to further improve the heat uniformity and to use an inexpensive power supply circuit, the square-plate-shaped heater element 4 has a thermal conductivity at room temperature. Is preferably formed of a silicon carbide sintered body having a resistivity of 150 W / m · K or more and an electrical resistivity at room temperature of 1 to 100 Ωcm. The silicon carbide sintered body may be in accordance with the first embodiment.

As described above, these contents relating to the quadrangular disk-shaped heater element 4 can be applied to a general polygonal-shaped heater element if the lengths of the respective sides are set to be concentric and similar. The same operational effects as in the case of the square-plate-shaped heater element 4 can be obtained. .

[0045]

EXAMPLES Examples and comparative examples will be described below in more detail. Example 1 Amorphous silicon carbide powder having an average particle size of 0.02 μm, which was synthesized by a gas phase CVD method using α-type silicon carbide powder (manufactured by Taiheiyo Random Co., Ltd.) having an average particle size of 0.5 μm and monosilane and ethylene as raw materials. 8: 2 by weight ratio with silicon carbide fine powder
, And dispersed in methanol,
The mixture was further mixed by a planetary mill for 12 hours and granulated to obtain granulated powder.

After preliminarily forming the granulated powder into a disk shape by using a mold, the granulated powder is subjected to hot pressing under an argon atmosphere under an argon atmosphere.
It was sintered at a temperature of 0 ° C. for 120 minutes to obtain a sintered body. Grind both sides and sides of this sintered body, φ210mm, thickness 3m
A disc-shaped silicon carbide sintered body of m was produced.

The electrical resistivity of this sintered body at room temperature was measured by a four probe method to be 10 Ωcm, and the thermal conductivity at room temperature was measured by a laser flash method to be 230 W / m · It was K.

Next, as shown in FIG. 7, the disk-shaped silicon carbide sintered body 7 is provided on the circumference of φ180 mm by an electric discharge machining method at intervals of 90 degrees so that the electrode distribution is uniform. Four through holes 8,..., 8 for setting the electrodes 2 at a total of four positions were formed by an electric discharge machining method, and the disc-shaped heater element 1 was manufactured.

After connecting a columnar electrode (not shown) made of a silicon carbide sintered body to the through-holes 8,..., A susceptor made of an aluminum nitride sintered body is provided above the disk-shaped heater element 1. (Not shown), an alumina reflector (not shown) is disposed below the disc-shaped heater element 1, and the four electrodes connect two non-adjacent electrodes to a bus bar (not shown). ) Were connected by lead wires (not shown), and electrically connected to a power supply by using two pairs of electrodes in total.

The thermal uniformity of the heating apparatus according to Example 1 was tested by placing an 8-inch Si wafer with a thermocouple on the susceptor, heating the wafer to 800 ° C., and measuring the temperature distribution on the Si wafer. did. The results are shown in Table 1. The temperature measurement positions are a total of nine points (temperature measurement points 1 to 9) on the Si wafer 9 shown in FIG. 8, and the heating environment and the energization conditions are as follows.

Heating environment: Atmospheric gas (N ₂ , 50 Torr) is flowed at a rate of 3 liter / min into a chamber in which a heating device is installed, and a top plate is provided above the disc-shaped heater element, and a center of the Si wafer is provided. In this environment, heat is trapped in the outer part and the outer periphery of the disk-shaped heater element has a large heat escape due to the convection of the atmospheric gas. Energizing conditions: load voltage 44.7 V, load current 62.7 A, single-phase AC 50 Hz

[Example 2] An annular groove having a width of 2 mm and a depth of 0.2 mm was formed on the outer circumference of φ160 mm as a groove for controlling the amount of heat generation to secure uniform heat. Produced a heating device according to Example 1. The soaking properties of this heating device were tested by measuring according to Example 1.
The results are shown in Table 1. The heating environment is the same as that of the first embodiment, and the energizing conditions are as follows. Energizing conditions: load voltage 47.3 V, load current 59.2 A, single-phase AC 50 Hz

[Example 3] A groove for controlling the amount of heat generation and ensuring the uniform temperature was formed on the circumference of φ50 mm at the center and 2 mm in width.
A heating device was manufactured in the same manner as in Example 1 except that an annular groove having a depth of 0.2 mm was formed. The soaking properties of this heating device were tested by measuring according to Example 1. The results are shown in Table 1. The heating environment and energization conditions are as follows. Heating environment: in a vacuum (2 × 10 ⁻⁴ Torr). An environment in which a heating device is installed, but there is a quartz window at the top of the chamber, and the heat in the center of the Si wafer escapes upward. Energizing conditions: load voltage 50.0 V, load current 64.1 A, single-phase AC 50 Hz

Fourth Embodiment As shown in FIG. 9, a square disk-shaped heater element 4 having a side length of 120 mm,
A heating device was manufactured in the same manner as in Example 1 except that the electrodes 5,..., 5 were provided at a total of four positions on a circumference of φ136 mm and at 90 ° intervals. The soaking properties of this heating device were tested by measuring according to Example 1. The results are shown in Table 1. However, the temperature measurement positions were a total of nine places (temperature measurement points 1 to 9) on the Si wafer 10 shown in FIG. 10, the heating environment was the same as in Example 1, and the energization conditions were as follows. Energizing conditions: load voltage 26.5 V, load current 52.9 A, single-phase AC 50 Hz

Comparative Example 1 On a circumference of φ80 mm and 9
A heating device was manufactured in the same manner as in Example 1 except that electrodes were provided at a total of four positions at intervals of 0 degrees. The soaking properties of this heating device were tested by measuring according to Example 1. The results are shown in Table 1. The heating environment is the same as that of the first embodiment, and the energizing conditions are as follows. Energizing conditions: load voltage 45.4 V, load current 63.9 A, single-phase AC 50 Hz

[Comparative Example 2] On the circumference of φ 50 mm and 9
A heating device was manufactured in the same manner as in Example 4, except that electrodes were provided at a total of four positions at intervals of 0 degrees. The soaking properties of this heating device were tested by measuring according to Example 1. The results are shown in Table 1. However, the temperature measurement positions were nine in total as shown in FIG. 9, the heating environment was the same as in Example 1, and the energization conditions were as follows. Energizing conditions: load voltage 27.3 V, load current 54.6 A, single-phase AC 50 Hz

[0057]

[Table 1]

From the results in Table 1, the following points became clear. (1) The heating device of Example 1 has better heat uniformity than the heating device of Comparative Example 1, and the heating device of Example 4 has better heat uniformity than the heating device of Comparative Example 2. (2) Further, in the heating device (embodiment 2) used in an environment where the heat escape of the outer peripheral portion is large, an annular groove is engraved on the outer peripheral portion of the disk-shaped heater element 1 and the outer peripheral portion is formed. By increasing the calorific value, the heat uniformity is further improved. (3) Further, in the heating device (embodiment 3) used in an environment where the heat escape at the center is large, an annular groove is engraved on the inner periphery of the disc-shaped heater element 1 and the inner periphery is formed. By increasing the calorific value of the part, the heat uniformity is further improved.

[0059]

As described in detail above, claim 1 of the present invention
In the heating device according to the above, the radius R₁Disk-shaped heater element
And a plurality of power supplies for supplying power to the heater element.
A heating device comprising at least a pole, wherein the electrode comprises:
Distance R from the center of the heater element_TwoIs R_Two≒
0.5R₁And the distance R from the center_ThreeBut
R _Three≒ 0.95 R₁In the area formed by concentric circles
In addition, since the distribution is arranged to be substantially even,
It can be formed much larger than before, and
A disc-shaped sample is heated at a predetermined temperature with good uniformity over the entire area.
Each time it is heated, and reacts with the reactive gas.
Reaction products generated by the process adhere and short-circuit electrically
Easy to clean this deposit without fear
This has the effect of becoming For semiconductor manufacturing equipment
It can be suitably used as a heating device or the like.

Further, in the heating device according to the second aspect, a polygonal disk-shaped heater element whose side length is R _4i (i = 1, 2,..., N) and an electric power are supplied to the polygonal disk-shaped heater element. , And each electrode is concentric and similar to the polygonal heater element, and each side has a length R _5i (i = 1, 2,..., N). R _5i (i = 1,2,…, n) ≒
A polygon having 0.5R _4i (i = 1,2, ..., n) and a side length R _6i (i = 1,2, ..., n) are also R _6i (i = 1,2, ..., n) ≒ 0.95
In a region formed by a polygon having R _4i (i = 1, 2,..., N), the distribution is arranged so as to be substantially uniform, so that it can be formed larger than before. In addition, the quadrangular sample can be heated to a predetermined temperature with good heat uniformity over the entire area, and there is no possibility that the reaction product generated by the reaction with the reactive gas adheres and short-circuits electrically. This has the effect of making it easier to clean the deposits. Therefore, it can be suitably used as a heating device or the like for a semiconductor manufacturing device.

Further, in the heating device according to the third aspect, since the heating element control grooves are formed on the upper surface and / or the lower surface of the square disk-shaped heater element, the uniformity of the heating device is further improved. I do.

Furthermore, in the heating device according to the fourth aspect, the heater element has a thermal conductivity of 150 W / m at room temperature.
・ K or more and electrical resistivity at room temperature is 1-100Ωcm
Since it is formed of a silicon carbide sintered body of, the heat uniformity is further improved, for example, it can be suitably applied to the field of semiconductor manufacturing where high heat uniformity is required, and
It is possible to realize a heating device that does not require a large current to flow to obtain a predetermined heat generation amount, and that can use an inexpensive power supply circuit.

Further, in the heating apparatus according to the fifth aspect, since the polygonal disk-shaped heater element is a square disk-shaped heater element, the heater element can be formed larger than in the prior art, and a rectangular sample can be used. The entire area can be heated to a predetermined temperature with good thermal uniformity, and there is no danger of the reaction products generated by the reaction with the reactive gas adhering to cause an electrical short circuit. Easy.

[Brief description of the drawings]

FIG. 1 is an explanatory plan view showing a heating device including a disk-shaped heater element having two pairs of electrodes according to an embodiment of the present invention.

FIG. 2 is an explanatory plan view showing a heating device including a disk-shaped heater element having three electrodes according to the embodiment.

FIG. 3 is an explanatory plan view showing a heating device having a disk-shaped heater element having three pairs of electrodes according to the embodiment.

FIG. 4 is an explanatory plan view showing a heating device provided with a disk-shaped heater element having two sets of electrodes, with one set of three electrodes in the same embodiment.

FIG. 5 shows 4 having two pairs of electrodes according to the embodiment.
FIG. 3 is an explanatory plan view illustrating a heating device including a square disk-shaped heater element.

FIG. 6 is an explanatory plan view showing a heating device provided with a quadrangular disk-shaped heater element having two sets of electrodes in which four are set as one set in the embodiment.

FIG. 7 is an explanatory plan view showing a disk-shaped heater element made of a disk-shaped silicon carbide sintered body according to the first embodiment.

FIG. 8 is an explanatory plan view showing measurement points for measuring the temperature uniformity by the disk-shaped heater element in Example 1 according to the temperature distribution of the Si wafer.

FIG. 9 is an explanatory plan view showing a square-plate-shaped heater element made of a square-plate-shaped silicon carbide sintered body according to the fourth embodiment.

FIG. 10 is an explanatory plan view showing measurement points for measuring the temperature uniformity by the square-plate-shaped heater element in Example 4 according to the temperature distribution of the square-plate-shaped Si wafer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Disc-shaped heater element 2, 5 electrode 3, 6 groove 4 Square-plate-shaped heater element 7 Disc-shaped silicon carbide sintered body 8 Through-hole 9 Si wafer 10 Square-plated Si wafer

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Takeshi Watanabe 22-1 Futama Shinmachi, Ichikawa-shi, Chiba F-term in the New Materials Division of Sumitomo Osaka Cement Co., Ltd. (Reference) 3K092 PP20 QA05 QB09 QB30 QB74 QC13 QC18 QC31 RF03 RF22 VV06 VV22 VV40 4G001 BA22 BB22 BC12 BC13 BC73 BD03 BD22 BE31

Claims (5)

[Claims] 1. A heater element comprising a disk-shaped heater element having a radius R ₁ and a plurality of electrodes for supplying power to the heater element, wherein each electrode has a distance R ₂ from the center of the heater element R _2. concentric is ≒ 0.5 R _1, also the distance R ₃ from the center in the area formed by the concentric circles is R ₃ ≒ 0.95 R _1, that the distribution is arranged so as to be substantially equal Characteristic heating device. 2. A polygonal heater element having a side length R _4i (i = 1, 2,..., N) and a plurality of electrodes for supplying power to the polygonal heater element. At least prepare,
Each of the electrodes is concentric and similar to the polygonal heater element, and each side has a length R _5i (i = 1, 2,..., N) of R _5i.
(i = 1,2,…, n) ≒ 0.5R _4i (i = 1,2,…, n) and the same side length R _6i (i = 1,2,…, n) Is R _6i (i = 1,
2,..., N) ₄ 0.95 R _4i (i = 1, 2,..., N). Heating equipment. 3. The heating device according to claim 1, wherein a groove for controlling a calorific value is formed on an upper surface and / or a lower surface of the heater element. 4. The heater element is formed of a silicon carbide sintered body having a thermal conductivity at room temperature of 150 W / m · K or more and an electrical resistivity at room temperature of 1 to 100 Ωcm. The heating device according to claim 1 or 2, wherein: 5. The heater element according to claim 2, wherein said polygonal heater element is a square disk heater element.
A heating device according to any one of claims 1 to 4.