JP2001025028A - Multi-plate type solid-state image pickup device and manufacture therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized and light-weight multi-plate type solid-state image pickup device capable of high quality image pickup. SOLUTION: In this 3-plate type solid-state image pickup device 1 constituted of three imaging devices 5, 6 and 7 composed of photoelectric conversion films 10, 12 and 14 and signal processing circuits 11, 13 and 15 and three prisms 2, 3 and 4, by directly forming the imaging devices 5, 6 and 7 on the end faces of the prisms 2, 3 and 4 by a thin film formation method or a vapor phase deposition method, they are formed without generating any deviation of an optical axis and a gap with the end faces of the prisms 2, 3 and 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-plate solid-state imaging device used for a video camera or the like.

[0002]

2. Description of the Related Art A solid-state imaging device used in a video camera, a digital still camera, or the like is configured using an imaging device such as a CCD or a photodiode. In recent years, in these solid-state imaging devices, a multi-plate solid-state imaging device is used in order to further increase the definition of an image.

A single-plate solid-state imaging device reads an incident light image with a single imaging device, so that it is red (R), green (G), and blue (B).
Are arranged on each pixel, and three pixels are required to represent one color. Therefore, when an image sensor having 9 × 3 pixels as shown in FIG. 5A is used, it is possible to display only information of 3 × 3 pixels as shown in FIG. 5B.

Therefore, in the case of, for example, a three-plate type solid-state image pickup device, an incident light image is divided into three color components (R, G, B), and the structure of each color is read by each image pickup device. Therefore, as shown in FIG. 6, even when an image sensor having 9 × 3 pixels is used, information display of 9 × 3 pixels can be performed as it is.

[0005] This makes it possible to increase the definition of an image. However, in order to split the actually incident light into color components, a solid-state imaging device as shown in FIG. 7 is configured using a prism. The three-plate solid-state imaging device 70 includes three prisms 71,
72 and 73 and three image pickup devices 74, 75 and 76.

The image pickup devices 74, 75, and 76 use CCDs or the like, but are usually mounted on a ceramic package, and the light-receiving surface is sealed with a light-transmitting material such as glass. Such a package is installed facing the end faces of the prisms 71, 72, 73.

The incident light (incident light image) incident on the prism 71 is reflected only by the blue light reflecting film 77 formed on the end face of the prism 71 on the prism 72 side. Is emitted from the end face. On the other hand, the light beam transmitted through the blue light reflecting film 77 is
Red light reflection film 7 formed on the end face on the prism 73 side
8, only the red light is reflected, and the image sensor 7 of the prism 72
The light is emitted from the end face on the 5th side.

The green light transmitted through the red light reflection film 78 is emitted from the end face of the prism 73 on the image sensor 76 side as it is. The incident light is split into blue, red, and green components by the prisms 71, 72, 73, the blue light reflecting film 77, and the red light reflecting film 78, and read by the image sensors 74, 75, 76, respectively.

[0009]

However, the size of the light receiving surfaces of the imaging elements 74, 75, and 76 is limited by the package, and the package has an ineffective area, so that the solid-state imaging device cannot be miniaturized.

[0010] Further, since the ceramic package is formed by sintering at a high temperature, warpage and distortion occur. Therefore, in order to make the light receiving surface of the image sensor parallel to the prism end surface, that is, to make the light receiving surface perpendicular to the optical axis, a gap (79, 8 in FIG. 7) is provided between the image sensor and the prism end surface.
0, 81) are required.

As described above, the process of assembling the solid-state image pickup device is complicated because the light receiving surface of the image pickup device is perpendicular to the optical axis and an angle correction tool is used. Even if it can be installed vertically with high accuracy, it is vulnerable to mechanical shock, and if the position of the image sensor shifts due to mechanical shock, it has instability factors such as causing color shift of the captured image I will. Further, there has been a problem that a flare in which light is incident on an adjacent pixel or a ghost in which light is incident on a pixel having no relation with other pixels due to the multiple reflections due to the gap, thereby deteriorating the image quality.

In addition to the problem of image reliability described above,
If the distance of the gap between the light receiving surface of the image sensor and the end surface (exit surface) of the prism is large, the prism unit must be enlarged in consideration of the opening area of the light receiving surface, and not only the solid-state imaging device becomes large, but also the lens becomes large. This leads to an increase in the size of the entire imaging system.

In order to arrange the light receiving surface of the image pickup device perpendicular to the optical axis, a solid-state image pickup device in which an image pickup device is adhered to the end face of a prism without using a ceramic package is disclosed in Japanese Patent Application Laid-Open No. Sho.
No. 165078, JP-A-55-30222, JP-A-56-30381 and JP-A-57-124982. According to these, miniaturization is possible because there is no package.However, since an adhesive or a transparent substrate exists between the end face of the prism and the light receiving surface, reflection and absorption of incident light occur at that portion, so that high quality is achieved. Cannot be imaged.

Japanese Patent Application Laid-Open No. 55-159678 discloses a solid-state imaging device in which glass is adhered to the surface of an image pickup device mounted on a ceramic package, and the back surface of the glass is adhered to the end surface of a prism. In this solid-state imaging device, the light receiving surface of the imaging element and the prism end surface are parallel, but there is a problem that the package cannot reduce the size of the solid-state imaging device.

An object of the present invention is to provide a small, lightweight, multi-plate solid-state imaging device capable of high-quality imaging.

[0016]

According to a first aspect of the present invention, there is provided a multi-plate solid-state imaging device according to the present invention.
A prism that splits an incident light beam into a plurality of optical paths and emits the light beam;
A multiple-plate solid-state imaging device including a plurality of imaging elements that receive light emitted from the prism, wherein the imaging element is formed directly on the prism.

According to this configuration, since the image pickup device is formed directly on the prism, it is resistant to mechanical shock, and the light receiving surface of the image pickup device can be easily installed perpendicular to the optical axis. In addition, since there is no gap between the exit surface of the prism and the image sensor, occurrence of flare and ghost can be suppressed, and a high-quality image can be obtained. Further, since there is no gap, it is not necessary to consider multiple reflection or refraction at this portion, and the design of the prism is facilitated, and the prism itself can be miniaturized, so that a small and lightweight solid-state imaging device can be obtained. Can be

Further, in the multi-plate type solid-state imaging device according to the invention described in claim 2, the imaging element has a photoelectric conversion film of an amorphous semiconductor. According to this configuration, even when the imaging element is formed directly on the end face of the prism, since an amorphous semiconductor is used, formation of a photoelectric conversion film or the like is easy.

According to a third aspect of the present invention, the photoelectric conversion film of the image sensor has a multiplication function. According to this configuration, multiplication can be performed even with a small amount of signal charge, so that high sensitivity and high density of the imaging element can be achieved.

Further, in the multi-plate type solid-state imaging device according to the invention described in claim 4, the thickness of the photoelectric conversion film of the imaging device has a different thickness depending on each color component. According to this configuration, by changing the film thickness for each color component, light use efficiency and sensitivity are improved in the image pickup device of each color. Therefore, the S of the imaging system using the solid-state imaging device
/ N ratio can be improved.

Further, in the multi-plate type solid-state imaging device according to the present invention, the imaging element is formed by a thin film forming method. According to this configuration, since the adhesive is not used, incident light by the adhesive is not reflected or absorbed, and high-quality imaging can be performed.

According to a sixth aspect of the present invention, in the multi-plate type solid-state imaging device, the imaging element is formed by a vapor deposition method. According to this configuration, since the adhesive is not used, incident light by the adhesive is not reflected or absorbed, and high-quality imaging can be performed. In addition, film formation can be performed favorably, and imaging quality can be improved.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a multi-plate solid-state imaging device, comprising: a prism for dividing an incident light beam into a plurality of optical paths and emitting the light; and a plurality of prisms for receiving the light emitted from the prism. In a method for manufacturing a multi-plate solid-state imaging device including an imaging element, the imaging element is formed directly on the prism.

According to this method, since the image pickup device is formed directly on the prism, it is resistant to mechanical shock, and the light receiving surface of the image pickup device can be easily installed perpendicular to the optical axis. Again, since there is no gap between the prism exit surface and the image sensor, the occurrence of flare and ghost can be suppressed, and a high-quality image can be obtained. Furthermore, since there is no gap, there is no need to consider multiple reflection or refraction at this portion, and the design of the prism becomes easy, and the prism itself can be miniaturized, so that a small and lightweight solid-state imaging device can be obtained. . Further, the forming process itself is well-known, and no special device is required.

In the method of manufacturing a multi-plate solid-state imaging device according to the present invention, the imaging element is formed by a vapor deposition method. According to this configuration, since the adhesive is not used, incident light by the adhesive is not reflected or absorbed, and high-quality imaging can be performed. Further, the step of attaching the image sensor to the prism can be omitted, and the manufacturing process can be simplified.

According to a ninth aspect of the present invention, in the method for manufacturing a multi-plate solid-state imaging device, the imaging element is formed by a vapor deposition method. According to this configuration, since the adhesive is not used, incident light by the adhesive is not reflected or absorbed, and high-quality imaging can be performed. Further, the step of attaching the image sensor to the prism can be omitted, and the manufacturing process can be simplified.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram illustrating a multi-plate solid-state imaging device according to a first embodiment of the present invention. The three-plate solid-state imaging device 1 includes:
Three prisms 2, 3, 4 and three image sensors 5, 6, 7
It is composed of The imaging device 5 includes a photoelectric conversion film 10 and a signal processing circuit 11. Similarly, the imaging device 6 includes a photoelectric conversion film 12 and a signal processing circuit 13, and the imaging device 7 includes a photoelectric conversion film 14 and a signal processing circuit 15.

The light incident on the prism 2 is reflected by a blue light reflecting film 8 formed on the end face of the prism 2 on the prism 3 side.
, Only blue light is reflected, and is emitted from the end face of the prism 2 on the image sensor 5 side. On the other hand, the light transmitted through the blue light reflection film 8 is reflected only by the red light reflection film 9 formed on the end face of the prism 3 on the prism 4 side, and the prism 3
Are emitted from the end face on the image sensor 6 side.

The green light transmitted through the red light reflecting film 9 is emitted from the end face of the prism 4 on the image sensor 7 side as it is.
The incident light is split into blue, red, and green components, photoelectrically converted by the photoelectric conversion films 10, 12, and 14 of the imaging devices 5, 6, and 7, respectively, and converted into signal charges by the signal processing circuits 11, 13, and 1.
5 and becomes an image signal.

FIGS. 2A to 2G are views showing a manufacturing process for forming the image pickup device of FIG. 1 on a prism. The manufacturing process proceeds from FIG. 2A to FIG. 2G. FIG.
2A to 2C, the photoelectric conversion films (10, 1 in FIG. 1)
2 and 14) and the signal processing circuits (11, 13, and 15 in FIG. 1) are performed in FIGS. 2D to 2G.

In FIG. 2A, a transparent electrode 21 serving as a lower electrode of an image pickup device is formed on a desired surface of a prism 20 by ITO or the like by a sputtering method or the like, and a photoelectric conversion film 22 is formed thereon. . Here, the prism 20 is drawn with the same thickness for convenience, but may have any optical shape as long as the surface on which the image sensor is formed is a smooth surface without fine irregularities.

The photoelectric conversion film 22 is formed by laminating hydrogenated amorphous silicon or the like in a PN structure or a PIN structure. Since amorphous silicon is used, C
By the VD method or the like, a film can be easily formed without considering a base. Further, since it is amorphous, the control of the impurity concentration and the composition can be freely changed, so that, for example, a multiplication type image pickup device incorporating a tilted structure can be formed.

In FIG. 2B, a conductive film such as aluminum is formed on the photoelectric conversion film 22 by a sputtering method, a vacuum evaporation method or the like, and is patterned by photolithography to form an upper electrode 23. Since the upper electrode 23 also functions as an optical shielding film of a signal processing circuit laminated on the photoelectric conversion film 22, an opaque electrode is used.

In FIG. 2C, the upper electrode 23 is covered with Si.
N _X, after forming the SiO _2, insulating film 24 of polyimide or the like, by photolithography to form a contact hole. Note that a sputtering method or a spin coating method can be used when an insulating film is formed using SiN _X or SiO _2, and a spin coating method or the like can be used when an insulating film is formed using polyimide or the like.

In FIG. 2D, as in FIG. 2B, the source electrode 25 and the drain electrode 26 of the signal processing circuit are formed of aluminum or the like. In FIG. 2E, the semiconductor layer 27 is formed of amorphous silicon or the like. Also,
In FIG. 2F, the gate insulating film 28 is formed by a sputtering method using Si ₃ N ₄ or SiO ₂ or the like.

In FIG. 2G, after a conductive film is formed on the gate insulating film 28, the gate electrode 29 and the additional capacitance electrode 31 are patterned by photolithography. In the present embodiment, a structure having an additional capacitance is provided between the source electrode 25 and the additional capacitance electrode 31, whereby the linearity of the signal due to the stray capacitance between the source electrode 25 and the gate electrode 29 of the TFT is reduced. It has reduced the deterioration.

As described above, when the step of directly forming the image pickup element on the prism is performed by a thin film forming method without using an adhesive, since the adhesive is not used, the incident light due to the adhesive is not reflected or absorbed, so that a high efficiency is obtained. High-quality imaging becomes possible. In addition, when the step of directly forming the image pickup device on the prism is performed by a vapor deposition method such as a vacuum deposition method, a chemical vapor deposition method, or a physical vapor deposition method, a film can be formed well and a higher film formation can be achieved. High-quality imaging becomes possible.

The three prisms forming the imaging device manufactured in FIGS. 2A to 2G are assembled so as to act optically, and the three-plate solid-state imaging device as shown in FIG. The device 1 is obtained.

In this embodiment, the image pickup device is formed directly on the prism, but the image pickup device may include a trimming filter layer in order to increase the spectral sensitivity. In this case, the trimming filter layer is preferably provided on the prism side of the photoelectric conversion film, and is more preferably provided on the surface of the image sensor closest to the prism.

FIG. 3 is a diagram showing a multi-plate solid-state imaging device according to a second embodiment of the present invention. Two-plate solid-state imaging device 40
Represents two prisms 41 and 42 and two image sensors 43,
44. The imaging element 44 includes a photoelectric conversion film 48 and a signal processing circuit 49.

The image sensor 43 comprises an RB color filter 45 in which red (R) filters and blue (B) filters are alternately arranged, a photoelectric conversion film 46, and a signal processing circuit 47.
The RB color filter 45 may have a form in which stripe-shaped R filters and B filters are alternately arranged, or a form in which dot-shaped R filters and B filters are alternately arranged in a matrix.

The incident light incident on the prism 41 is reflected by the blue-red light reflecting film 50 formed on the end face of the prism 41 on the prism 42 side to reflect the blue light and the red light.
The light is emitted from the end face on the image sensor 43 side. On the other hand, the green light transmitted through the blue-red light reflecting film 50 is emitted as it is from the end face of the prism 42 on the image sensor 44 side.

Accordingly, the incident light is split into a green component and a component other than green, and the green component is separated from the photoelectric conversion film 48 of the image sensor 44.
Is photoelectrically converted. In addition, components other than green are
Is photoelectrically converted by the photoelectric conversion film 46 through the RB color filter 45. Then, the signal charges are processed by the signal processing circuits 49 and 47, respectively, to become image signals.

In the manufacturing process of the two-plate type solid-state imaging device 40 of the present embodiment, the photoelectric conversion film and the signal are formed on the end face of the prism that emits green light in accordance with the manufacturing process shown in FIGS. A processing circuit may be formed. In addition, first, RB is applied to the end face of the prism that emits red and blue light other than green light.
After the formation of the color filter 45, a photoelectric conversion film and a signal processing circuit are formed thereon in accordance with the manufacturing steps shown in FIGS. The RB color filter 45 is desirably formed using a mask made of a heat-resistant material such as a dielectric multilayer film.

Thereafter, the two prisms 41 and 42 are assembled so as to operate optically. In this case, since the shape can be simplified by using two prisms, the size can be reduced and the cost can be reduced.

Next, in the multi-plate type solid-state imaging device according to the third embodiment, a film having a multiplication function is used for the photoelectric conversion film formed on the end face of the prism. The manufacturing process of the multi-plate solid-state imaging device according to the present embodiment is almost the same as that shown in FIGS. 2A to 2G, but the photoelectric conversion film 2 formed in FIG.
2 is formed as a photoelectric conversion film 31 having a multiplication function by an avalanche phenomenon by laminating hydrogenated amorphous silicon in the order of a p-type layer 31p, an intrinsic type layer 31i, and an n-type layer 31n as shown in FIG. are doing. This step is
For example, it can be realized by forming a hydrogenated amorphous silicon into a PIN structure by a plasma CVD method.

As described above, when the photoelectric conversion film 31 having the multiplication function is used, it is desirable to provide the additional capacitance as shown in FIG. 2 (g) and FIG. This is because the multiplication film generates a large amount of signal charges, and unless the additional capacitance is provided, the electric field applied to the multiplication film is relaxed by the large amount of signal charges, and the multiplication factor is reduced. It is. If the multiplication factor is not constant, the linearity of the image signal deteriorates and the image signal does not accurately represent the amount of received light. Therefore, the present embodiment also has an additional capacitor.

Then, using two or three prisms on which an image sensor as shown in FIG. 4 is formed, an optically acting multi-plate solid-state image sensor is assembled. When a two-plate solid-state imaging device is manufactured using two prisms, a color filter must be provided on one side as described in the second embodiment.

Next, as a fourth embodiment, a multi-plate solid-state imaging device in which the thickness of the photoelectric conversion film of each imaging device is different will be described. A semiconductor photoelectric conversion film used for an image sensor has an absorption coefficient that differs depending on the wavelength of incident light. That is,
Short-wavelength high-energy light is absorbed near the incident surface of the photoelectric conversion film, while long-wavelength low-energy light is absorbed behind the photoelectric conversion film. Therefore, in a three-plate solid-state imaging device including three imaging elements using the same thickness of thin film as the photoelectric conversion film, the ratio of light that can be absorbed by the imaging elements of each color, that is, the light use efficiency, is different, and the imaging elements are different. There is a difference in sensitivity between the two.

For example, when white balance processing for adjusting white is performed using output signals of red, blue, and green, a signal of a color with low sensitivity is amplified or a signal of a color with high sensitivity is amplified. It is necessary to attenuate, which leads to a reduction in the S / N ratio as a system. On the other hand, if the thickness of the photoelectric conversion film is increased as a whole in order to improve the light absorption, recombination of carriers generated in the photoelectric conversion film increases, and the sensitivity substantially decreases.

Therefore, in the three-plate solid-state imaging device of the present embodiment, the photoelectric conversion film thickness of each color imaging device is individually set in consideration of the absorption coefficient with respect to the wavelength of the incident light. Generally, the absorbance A (%) is represented by the following equation.

A = (1−exp (−α (λ) · x)) × 100 where α (λ) is an absorption coefficient and x is a photoelectric conversion film thickness.

For example, for each color of red, blue and green, 50
%, It is necessary to manufacture a solid-state imaging device that absorbs hydrogen by using a photoelectric conversion film using hydrogenated amorphous silicon.
The absorption coefficient is 3.89 × 10 ³ c for red (wavelength 650 nm)
m ⁻¹ , green (wavelength 550 nm), 5.41 × 10 ⁴ cm ⁻¹ ,
Since blue (wavelength 450 nm) is 2.54 × 10 ⁵ cm ⁻¹ , the film thickness is 27 nm for red, 128 nm for green, and 1 for blue.
It can be set to 783 nm.

The method of controlling the thickness of the photoelectric conversion film in the step is as follows.
For example, plasma C using hydrogenated amorphous silicon
In the case of forming by the VD method, it can be easily realized by changing the film forming time. In the process of FIG. 2A described above, by controlling the film formation time of the photoelectric conversion film 22, a multi-plate solid-state imaging device in which the absorptance of each color, that is, the sensitivity is arbitrarily set is obtained.

The multi-plate solid-state imaging device according to the present embodiment
The present invention is also applicable to an image pickup device having a multiplication function. Furthermore,
In the case of a two-plate solid-state imaging device as in the second embodiment, it can be applied by changing the film thickness of each prism after forming the RB color filter of FIG. Note that the absorbance of incident light does not need to be matched for each color component, but can be set arbitrarily for each color component according to specifications and applications.

[0056]

According to the first aspect of the present invention, since the imaging device is formed directly on the prism, it is resistant to mechanical shock, and the light receiving surface of the imaging device can be easily installed perpendicular to the optical axis. Can be. In addition, since there is no gap between the prism exit surface and the image sensor due to the direct formation, it is not necessary to consider multiple reflection or refraction at this portion, so that the design of the prism is easy and the occurrence of flare and ghost is suppressed. And a high-quality image can be obtained. Further, since the size of the prism itself can be reduced, a small and lightweight solid-state imaging device can be obtained, and the size and weight of the imaging system itself can be reduced.

According to the second aspect of the present invention, in addition to the effect of the first aspect, when an imaging element is formed directly on the end face of a prism, since an amorphous semiconductor is used, it is easy to form a photoelectric conversion film or the like. . Amorphous semiconductor is CV
The film can be easily formed without considering the underlayer by the D method, etc., and since it is amorphous, the impurity concentration can be controlled and the composition can be freely changed, so that the photoelectric conversion film can be formed according to the application. is there.

According to the third aspect of the invention, in addition to the effect of the first aspect, an accurate image signal can be obtained by the multiplication function even if the signal charge generated in the photoelectric conversion film is weak because the incident light is weak. Thus, a solid-state imaging device capable of obtaining a high-definition image can be realized. Further, since the density of the imaging element can be increased, the size of the solid-state imaging device can be further reduced.

According to the fourth aspect of the present invention, in addition to the effect of the first aspect, by changing the thickness of the photoelectric conversion film of the image sensor for each color component, the image sensor that receives light of each color can Light utilization efficiency and sensitivity are improved. Therefore, the S / N ratio of the image signal obtained by the solid-state imaging device can be improved, which can contribute to the improvement of the reliability of the solid-state imaging device.

According to the fifth and sixth aspects of the present invention, in addition to the effect of the first aspect, since no adhesive is used, incident light due to the adhesive is not reflected or absorbed, and high-quality imaging can be performed. . In addition, according to the vapor deposition method, film formation can be performed favorably, and imaging quality can be improved.

According to the seventh aspect of the present invention, since the imaging element is formed directly on the prism, the light receiving surface of the imaging element can be easily installed perpendicular to the optical axis, and a solid-state imaging device resistant to mechanical shock can be provided. realizable. Further, since there is no gap between the prism exit surface and the image pickup device, it is not necessary to consider multiple reflection or refraction at this portion, so that the design of the prism becomes easy, and the occurrence of flare and ghost can be suppressed. Further, a high quality image can be obtained. Since the size of the prism itself can be reduced, a compact and lightweight solid-state imaging device can be obtained, and the imaging system itself can be reduced in size and weight. In addition, the forming process is well-known, and no special device is required.

According to the eighth and ninth aspects of the invention, in addition to the effect of the seventh aspect, since no adhesive is used, there is no reflection or absorption of incident light by the adhesive, and high-quality imaging can be performed. . In addition, according to the vapor deposition method, film formation can be performed favorably, and imaging quality can be improved.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a multi-plate solid-state imaging device according to a first embodiment.

FIG. 2 is a diagram illustrating a manufacturing process of an imaging element of the multi-plate solid-state imaging device according to the first embodiment.

FIG. 3 is a configuration diagram of a multi-plate solid-state imaging device according to a second embodiment.

FIG. 4 is a cross-sectional view of a multiple-plate solid-state imaging device according to a third embodiment.

FIG. 5 is a diagram illustrating a display principle of a single-plate solid-state imaging device.

FIG. 6 is a diagram illustrating a display principle of a multi-plate solid-state imaging device.

FIG. 7 is a configuration diagram of a conventional three-plate solid-state imaging device.

[Explanation of symbols]

1, 70 three-plate solid-state imaging device 2, 3, 4, 41, 42, 71, 72, 73 prism 5, 6, 7, 43, 44, 74, 75, 76 imaging device 8, 77 blue light reflecting film 9, 78 red light reflection film 10, 12, 14, 46, 48 photoelectric conversion film 11, 13, 15, 47, 49 signal processing circuit 40 two-plate solid-state imaging device 45 RB stripe / color filter 50 blue red light reflection film 20 prism 21 Transparent electrodes 22, 31 Photoelectric conversion film 23 Upper electrode 24 Insulating film 25 Source electrode 26 Drain electrode 27 Semiconductor layer 28 Gate insulating film 29 Gate electrode 30 Photoelectric conversion film 30p P-type layer 30i Intrinsic type layer 30n n-type layer 31 Additional capacitance electrode 79, 80, 81 gap

Continued on front page F-term (reference) 4M118 AA08 AA10 AB01 BA05 CA03 CA05 CB06 CB14 EA01 FB13 FB14 FB20 GB11 GB15 GC08 GD13 5C065 AA01 AA03 BB42 BB48 CC01 DD02 DD19 EE01 EE06

Claims (9)

[Claims] 1. A multi-plate solid-state imaging device comprising: a prism that splits an incident light beam into a plurality of optical paths and emits the light; and a plurality of image sensors that receive light emitted from the prism. Is formed directly on the prism. 2. The multi-plate solid-state imaging device according to claim 1, wherein said imaging element has a photoelectric conversion film of an amorphous semiconductor. 3. The multi-chip solid-state imaging device according to claim 1, wherein the photoelectric conversion film of the imaging element has a multiplication function. 4. The multi-plate solid-state imaging device according to claim 1, wherein the thickness of the photoelectric conversion film of the imaging device has a different thickness for each color component. 5. The multi-chip solid-state imaging device according to claim 1, wherein said imaging element is formed by a thin film forming method. 6. The multi-plate solid-state imaging device according to claim 1, wherein said imaging element is formed by a vapor deposition method. 7. A method for manufacturing a multi-plate solid-state imaging device, comprising: a prism that splits an incident light beam into a plurality of optical paths and emits the light; and a plurality of image sensors that receive light emitted from the prism. Is formed directly on the prism. 8. The method according to claim 7, wherein the image pickup device is formed by a thin film forming method. 9. The method according to claim 7, wherein the imaging device is formed by a vapor deposition method.