JP2001015400A - Exposure method, manufacture of device by use thereof exposure system, and manufacturing equipment of device by use thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively reduce impurities and ozone generated in the manufac ture of a device by a method wherein gas fed to a space is regulated in a flow rate corresponding to incident conditions under which exposure light energy is made to impinge on the space. SOLUTION: An inert gas regulator (gas feed mechanism) 29 which feeds inert gas such as nitrogen gas or the like to the space S of a lighting optical system LO regulating it in a flow rate is connected to the space S through the intermediary of a connection pipe line 29a. An exposure light control device 26 obtains the proper flow rate of inert gas depending on the estimated incident light volume of exposure light IL and sends a command to the inert gas regulator 29 to change a flow rate of inert gas. At this point, when an exposure light energy volume of exposure light IL per unit time is large, inert gas is increased in flow rate, and when an exposure light energy volume of exposure light IL per unit time is small, inert gas is lessened in flow rate. The incident conditions of exposure light IL are varied corresponding to the incident history of the exposure light IL to the lighting optical system LO.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method in the manufacture of, for example, a semiconductor element, a liquid crystal display element, and the like, a device manufacturing method using the same, an exposure apparatus, and a device manufacturing apparatus using the same.

[0002]

2. Description of the Related Art In recent years, the exposure light source of an exposure apparatus used in a photolithography process has been shortened in accordance with high definition and improvement in productivity of a semiconductor element or a liquid crystal display element. = 365nm), KrF excimer laser (λ = 248nm), ArF excimer laser (λ = 193n)
m) etc. are used.

It is known that when exposure is performed using exposure light having a wavelength in the ultraviolet region, a photochemical reaction occurs with air on the optical path. Particularly, when an exposure light uses an ArF excimer laser having a short wavelength. Occurs remarkably. As a result, impurities generated by such a reaction may adhere to the optical system and reduce the transmittance of the exposure light.

Further, there is a phenomenon in which the exposure light reacts with oxygen in the air to generate ozone, and the residual oxygen and the generated ozone absorb the exposure light. Therefore, the amount of light until the exposure light reaches the wafer is reduced in combination with the adhesion of the impurity, and as a result, there is a disadvantage that the processing capacity per unit time is reduced. Exposure apparatuses have been increasing the power of exposure light year by year in order to increase the processing capacity per time, and the photochemical reaction has become more and more likely to occur due to the high exposure light energy.

In a conventional exposure apparatus, for example, Japanese Patent Laid-Open No. 9-1
As disclosed in Japanese Patent Application Laid-Open No. 62117, the optical path of the illumination optical system or the projection optical system is hermetically sealed, and the air on the optical path is changed to an inert gas (nitrogen gas) by devising to block the invasion of air from the outside. Measures have been taken to mitigate by substitution. The replacement of the air in the illumination optical system with the inert gas is performed by supplying the inert gas from outside the exposure apparatus. In this case, a method is generally used in which an inert gas adjusted to a predetermined flow rate by a pressure adjusting device such as a regulator flows into an optical system.

Further, a method of correcting an aberration of the projection optical system by forming a closed space in a part or a plurality of parts inside the projection optical system and variably controlling the pressure of the part is disclosed in, for example, Japanese Patent Application Laid-Open No. No. 28613 and the like.
Since the above-mentioned inconvenience naturally occurs also in this closed space, an inert gas is used as a gas for adjusting the pressure here.

However, the concentration of the inert gas is completely constant due to the gas generated from the sealing material used for hermetic sealing and the air entering when there is a slight gap between the sealing materials. It is impossible to maintain the concentration, and while the concentration of inert gas in the enclosed space is monitored by a concentration sensor or the like provided outside, when the concentration decreases to some extent,
An operation of stopping the pressure control and once replacing the internal inert gas is also performed.

[0008]

However, as described above, in a conventional exposure apparatus having short-wavelength ultraviolet light such as an ArF excimer laser as exposure light, a photochemical reaction is caused by flowing an inert gas into an illumination optical system of the exposure apparatus. To reduce the amount of exposure light due to the attachment of impurities and the absorption of exposure light.However, it is difficult to completely block the entire illumination optical system from the outside. It was insufficient to remove oxygen and free impurities from the internal gas. In particular, in exposure with high energy, there is a problem that even a slight decrease in the concentration of the inert gas leads to generation of impurities and ozone. In addition, if the inert gas is continuously supplied to the illumination optical system or the projection optical system in a large amount, there is a disadvantage that the running cost is increased.

The present invention has been made in view of the above-mentioned problems, and an exposure method capable of effectively reducing the generation of impurities and ozone and improving the antifouling effect, exposure light transmittance, and running cost. And a device manufacturing method using the same, and an exposure apparatus and a device manufacturing apparatus using the same.

[0010]

The present invention has the following features to attain the object mentioned above. That is to say, referring to FIGS. 1 and 2, in the exposure method according to the present invention, the exposure energy (IL) from the exposure energy source (1) is guided to the mask (R), and the pattern of the mask is obtained. An exposure method of transferring a gas to at least one space (S) formed between the exposure energy generation source and the substrate, and supplying the gas to the space. Of the exposure energy incident on the space is adjusted according to the incident condition of the exposure energy incident on the space.

In the exposure apparatus according to the present invention, the exposure energy from the source (1) of the exposure energy (IL) is guided to the mask (R), and the pattern of the mask is transferred to the substrate (W). An apparatus for supplying a gas to at least one space (S) formed between the exposure energy generation source and the substrate (29).
And an adjusting mechanism (26) for adjusting the flow rate of the gas supplied to the space in accordance with the incident condition of the exposure energy incident on the space.

In these exposure methods and exposure apparatuses, gas is supplied to at least one space (S) formed between the exposure energy generation source (1) and the substrate (W), and is supplied to the space. Since the flow rate of the gas is adjusted according to the condition of the exposure energy (IL) incident on the space, the incident condition (for example, the amount of exposure energy per unit time, the time during which the exposure energy is incident on the space, or The flow rate of the gas is appropriately controlled in accordance with the incident history, etc.) so that the generation of ozone and the attachment of impurities can be sufficiently prevented. Therefore, contamination can be effectively prevented in accordance with the exposure energy incident condition, and waste of the gas supply amount is reduced.

In the exposure method according to the present invention, the exposure energy (IL) is guided by the illumination optical system (LO) to irradiate the mask (R), and the pattern on the mask is projected under the exposure energy. An exposure method for transferring the light to the substrate (W) via the (PL), wherein at least one of the illumination optical system or the projection optical system has an exposure energy incident on the illumination optical system or the projection optical system. A technique for adjusting the flow rate of gas flowing into the space (S) of the section is adopted.

In the exposure apparatus according to the present invention, the exposure energy (IL) is guided by the illumination optical system (LO) to irradiate the mask (R), and the pattern on the mask is projected under the exposure energy. An exposure apparatus for transferring an image to a substrate (W) via an optical system (PL), wherein a gas supply mechanism (40) for introducing a gas into at least a part of the space (S) in the illumination optical system or the projection optical system. 29) and an adjusting mechanism (26) for adjusting the flow rate of the gas according to the condition of incidence of the exposure energy to the illumination optical system or the projection optical system.
The technique having the following is adopted.

In these exposure methods and exposure apparatuses, at least a part of the illumination optical system (LO) or the projection optical system (PL) has at least a part in the illumination optical system or the projection optical system depending on the incidence condition of the exposure energy (IL). Since the flow rate of the gas flowing into the space (S) is adjusted, the above-mentioned incident conditions (for example, the amount of exposure energy per unit time, the time during which the exposure energy enters the illumination optical system or the projection optical system, the incident history, etc.) Accordingly, the gas flow rate can be controlled appropriately so as to sufficiently prevent generation of ozone and adhesion of impurities. Therefore, contamination can be effectively prevented in accordance with the exposure energy incident condition, and waste of the gas supply amount is reduced.

According to a fourth aspect of the present invention, there is provided an exposure method in which exposure energy (IL) is guided to a mask (R) and a pattern on the mask is transferred to a substrate (W) via a projection optical system (PL). A pressure control step of filling a gas into at least a part of the space (30) in the projection optical system at the time of the exposure, and controlling a pressure in the space to correct optical characteristics of the projection optical system; In some cases, a technology including a gas distribution step of causing the gas in the space to flow outside the space is employed.

In the exposure apparatus according to the present invention, the exposure energy (IL) is guided to the mask (R), and the pattern on the mask is transferred to the substrate via the projection optical system (PL). A pressure control mechanism (17) for filling at least a part of the space (30) in the projection optical system with gas at the time of the exposure and controlling the pressure in the space to correct the optical characteristics of the projection optical system; A gas circulation mechanism (17, 25, C) for allowing gas in the space to flow outside the space during non-exposure
A technology having the following is adopted.

In these exposure methods and exposure apparatuses, at the time of exposure, at least a part of the space (30) in the projection optical system (PL) is filled with a gas, and the pressure in the space is controlled to control the optical characteristics of the projection optical system. Since the gas in the space is allowed to flow outside the space at the time of non-exposure, the necessary exposure accuracy is ensured by pressure control at the time of exposure. High antifouling effect can be obtained.

According to a fifth aspect of the present invention, there is provided a device manufacturing method,
A method of manufacturing a device, which is manufactured through a transfer step of transferring a pattern of a mask onto a substrate, wherein a technique of performing the transfer step by the exposure method according to any one of claims 1 to 4 is employed.

According to a ninth aspect of the present invention, there is provided a device manufacturing apparatus manufactured by transferring a pattern of a mask (R) onto a substrate (W). The technique including the exposure apparatus described in (1) is adopted.

In the device manufacturing method and the device manufacturing apparatus, since the above-described exposure method or the above-described exposure apparatus is provided, the contamination of the optical member can be effectively prevented at the time of transfer, and the supply amount of gas is wasted. Reduced.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An exposure method according to the present invention, a device manufacturing method using the same, an exposure apparatus and a device manufacturing apparatus using the same will be described with reference to FIGS. I will explain while.

FIG. 1 is a view schematically showing the overall configuration of an exposure apparatus (device manufacturing apparatus) according to the present embodiment. The exposure apparatus uses far ultraviolet light (wavelength 1) as an exposure light source 1.
And an ArF excimer laser emitting an exposure light (exposure energy) IL of 93.4 nm).
This is a projection type exposure apparatus for manufacturing a semiconductor device (device) of a scan type.

In this exposure apparatus, the exposure light IL emitted from the exposure light source 1 is incident on the deflection mirror 2a in the illumination optical system LO. The illumination optical system LO receives a fly-eye lens 3, an illumination system aperture stop plate 4, an aperture control mechanism 5 for controlling the illumination system aperture stop plate 4, a transmission mirror 6, and exposure light IL reflected from the transmission mirror 6. Sensor 7, a relay lens 8, a blind 9, a blind control mechanism 10 for controlling the blind 9, a condenser lens 11, and the like. That is, the exposure light IL reflected from the deflecting mirror 2a transmits through the fly-eye lens 3, the illumination system aperture stop plate 4, the transmission mirror 6, the relay lens 8, the blind 9, and the condenser lens 11 in this order.
b.

In the space S in the illumination optical system LO, an inert gas regulator (gas supply mechanism) 29 for adjusting the flow rate and supplying an inert gas such as nitrogen gas into the space S is provided with a connection pipe line. 29a. The inert gas regulator 29 is connected to an unillustrated inert gas supply source via a connection pipe 29b. The exposure light source 1, the inert gas regulator 29, the aperture control mechanism 5, and the integrator sensor 7 each include an exposure amount control device (adjustment mechanism) 2.
The exposure amount control device 26 is connected to and controlled by the main control device C.

Exposure light IL reflected by deflection mirror 2b
Is incident on a reticle (mask) R on a two-dimensionally movable reticle stage RST supported on a reticle support 14. Further, the exposure light IL transmitted through the reticle R
Is incident on the projection optical system PL, passes through a plurality of lens elements constituting the projection optical system PL, enters the wafer (substrate) W, and converts the pattern image on the reticle R into the wafer W.
Form on the surface. Also, XY of reticle stage RST
The position in the plane is measured by making laser light incident from laser interferometer 15 on reticle stage interferometer mirror 15a provided on reticle stage RST and reflecting it.

In the projection optical system PL, as shown in FIGS. 1 and 2, an inert gas is supplied to an upper portion and a lower portion. In the projection optical system PL, a pressure control chamber (space) 30 for controlling the pressure in the pressure control chamber 30 is provided in a part of the space (middle section) through which the exposure light IL passes. 30 is connected to a pressure control device (pressure control mechanism) 17 for adjusting the internal pressure. The pressure control device 17 is connected and controlled by a CPU,
U is connected to and controlled by main controller C.

The pressure control device 17 includes a bellows 31 connected to the pressure control chamber 30 and capable of changing the internal volume, and a connecting line 17a between the bellows 31 and the pressure control chamber 30.
And an electromagnetic on-off valve 32b provided on a connection pipe 17b between the bellows 31 and an inert gas supply source (not shown). The projection optical system PL has an exhaust pipe 3 connected to the inside of the pressure control chamber 30.
An exhaust on-off valve 25 is provided at 0a. The exhaust on-off valve 25 is connected to and controlled by the main controller C.

The wafer W is mounted on a sample stage 19 on a wafer stage WST that can move in a three-dimensional direction (XYZ directions). The wafer stage WST is installed on a vibration isolation table 23. Further, the position of wafer stage WST in the XY plane is measured by causing laser light from laser interferometer 21 to be reflected on wafer stage interferometer mirror 21a provided on wafer stage WST and reflecting the same.

Reticle stage RST and wafer stage WST include laser interferometer 15 and laser interferometer 2
The wafer W is synchronously moved based on the measurement value of 1 according to an instruction from the stage controller SC, and the pattern is exposed on the wafer W by a so-called step-and-scan method. On wafer stage WST, irradiation amount sensor 2 for measuring the energy of exposure light IL emitted from projection optical system PL is provided.
2 are installed.

Note that above the wafer stage WST,
A light projecting system and a light receiving system (not shown) of a focus detection system for optically detecting the height position of the wafer W are provided. Measurement light is obliquely incident on the surface of the wafer W from the light projecting system and reflected on the surface of the wafer W. The measurement light thus received is received by a light receiving system, the height position of the wafer W is detected based on the signal, and the focus of the projection optical system PL is adjusted by moving the wafer stage WST in the height direction.

Next, the exposure method in the present embodiment will be described.

First, when the illumination system aperture stop plate 4 and the blind 9 are adjusted or changed by the respective control mechanisms 5 and 10, the main controller C sets the irradiation amount existing on the wafer stage WST at the beginning of the exposure operation. Wafer stage WST is moved such that exposure light IL is incident on sensor 22 from projection optical system PL. Then, the exposure control device 26
Is measured by measuring the exposure energy of the exposure light IL incident on the irradiation amount sensor 22 to determine the incidence condition of the exposure light IL on the subsequent illumination optical system LO or projection optical system PL, that is, the illumination optical system LO or The amount of exposure light IL incident on the projection optical system PL (the amount of exposure energy per unit time and the time during which the exposure light IL is incident on the projection optical system or the illumination optical system) is estimated.

The exposure control device 26 calculates the estimated exposure light I
An appropriate flow rate of the inert gas is determined from the incident amount of L, and a command is sent to the inert gas regulator 29 to change the flow rate.
Further, during the execution of the exposure, the energy of the exposure light IL can be monitored in real time by constantly monitoring the integrator sensor 7, and the flow rate of the inert gas according to the change in the energy of the exposure light IL is controlled by an inert gas regulator. 29 can be controlled.

That is, the flow rate of the inert gas supplied into the illumination optical system LO can be appropriately controlled in accordance with the incident condition (change in incident energy) of the exposure light IL that differs for each lot or each reticle. For example, when the exposure energy amount of the exposure light IL per unit time is large,
When the flow rate of the inert gas is increased and the exposure energy amount is small, the flow rate of the inert gas is reduced.

The exposure light IL for the illumination optical system LO
The incident conditions of the exposure light IL are changed according to the incident history of the laser beam (for example, the lot exchange history or the degree of adhesion of the impurity to the optical member). Adjusted appropriately. For example, the flow rate of the inert gas is increased in the initial stage of the exposure, and the flow rate of the inert gas is reduced when the degree of adhesion of impurities on the surface of the optical member is reduced due to the light cleaning effect of the repeated exposure. The degree of adhesion of the impurities on the optical member is measured, for example, by detecting a light absorption loss of the optical member using a photoacoustic method for measuring an acoustic signal described in JP-A-9-89650. can do.

On the other hand, in the projection optical system PL, in order to control the pressure in the pressure control chamber 30 at the time of exposure (when actually performing the exposure operation), the main control device C closes the exhaust electromagnetic on-off valve 25 and closes it. The pressure control chamber 30 is filled with an inert gas. Then, the pressure control device 17 closes the electromagnetic on-off valve 32b and opens the electromagnetic on-off valve 32a. Further, in this state, the CPU expands and contracts the internal bellows 31 by a driving mechanism (not shown), and changes the volume thereof, thereby changing the pressure of the pressure control chamber 30 and correcting the optical characteristics of the projection optical system PL. While performing exposure.

During non-exposure (when the exposure operation is stopped), the main controller C opens the exhaust electromagnetic on-off valve 25 and simultaneously opens the electromagnetic on-off valves 32a and 32b. At this time, the inert gas flows through the projection optical system PL through the pressure control device 17 and is exhausted to the outside. Thus, the pressure control device 17, the exhaust on-off valve 25, the CPU
Further, main controller C functions as a gas distribution mechanism that causes the inert gas in projection optical system PL to flow outside projection optical system PL during non-exposure.

Accordingly, in the present embodiment, the flow rate of the gas flowing into the pressure control chamber 30 in the illumination optical system LO is increased or decreased according to the incident conditions of the exposure light IL to the illumination optical system LO. The flow rate of the gas can be appropriately controlled so as to sufficiently prevent generation of ozone and attachment of impurities, thereby reducing waste and improving running costs.

During exposure, the pressure control chamber 30 in the projection optical system PL is filled with an inert gas, and the pressure in the pressure control chamber 30 is controlled to correct the optical characteristics of the projection optical system PL. Since the inert gas in the pressure control chamber 30 is allowed to flow outside the pressure control chamber 30, necessary exposure accuracy is ensured by pressure control during exposure, and the inert gas is constantly flowed during non-exposure to allow projection optical system The state in which the optical member of the system is exposed to the inert gas is created in many cases, and a high antifouling effect of the optical member can be obtained. Therefore, the number of gas replacements due to a decrease in the concentration of inert gas during exposure is reduced,
It is possible to increase the operation rate of the device.

The present invention includes the following embodiments. In each of the above embodiments, the illumination optical system LO
Although the flow rate of the inert gas supplied to the space S in the inside was adjusted according to the incident condition of the exposure light IL incident on the space S, the flow rate of the inert gas was similarly adjusted in the space inside the projection optical system PL. It does not matter. Further, the inert gas may be similarly supplied to the space where the reticle is arranged and the space where the wafer is arranged.

In each of the above embodiments, a nitrogen gas is used as a gas to be supplied, but an inert gas such as helium, neon, argon, krypton, xenon, or radon may be used. When the wavelength of the exposure light is KrF, chemically clean dry air (air from which a substance causing clouding of a lens, for example, ammonia ions floating in a clean room has been removed, or air having a humidity of 5% or less) )
May be used.

Further, in the above-described embodiment, it is desirable to use a material such as a stainless steel pipe or a Teflon tube, in which generation of impurity gas is suppressed (less), as the pipe used for the connection pipe lines 17a, 17b, 29a, 29b. . Similarly, optical members such as a spacing ring and a lens barrel in the illumination optical system LO and the projection optical system PL, and the bellows 31
It is desirable to use an aluminum material formed of a stainless steel material, or a Teflon-coated material (which is subjected to ultrasonic treatment after coating and sufficiently degassed) or the like.

The exposure apparatus of the above embodiment can be applied to a proximity exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact instead of a reticle without using a projection optical system. The application of the exposure apparatus is not limited to an exposure apparatus for semiconductor manufacturing, but an exposure apparatus for manufacturing other devices, for example, a liquid crystal exposure apparatus that exposes a liquid crystal display element pattern to a square glass plate, It can be widely applied to an exposure apparatus for manufacturing a thin film magnetic head.

In this embodiment, the light source of the exposure apparatus is
g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (1
93 nm), an F2 laser (157 nm), or a light source having a shorter wavelength. Further, the present invention can be applied to an exposure apparatus using X-rays or the like. The magnification of the projection optical system may be not only a reduction system but also an equal magnification or an enlargement system.

As far as the projection optical system is concerned, when a far ultraviolet ray such as an excimer laser is used, a material which transmits the far ultraviolet ray such as quartz or fluorite is used as a glass material, and when an F2 laser or X-ray is used, a catadioptric system or a refraction system is used. (The reflection type is also used for the reticle.)

When a linear motor (see US Pat. No. 5,623,853 or US Pat. No. 5,528,118) is used for the wafer stage or reticle stage, either an air levitation type using an air bearing or a magnetic levitation type using a Lorentz force or a reactance force is used. You may. Further, the stage may be of a type that moves along a guide, or may be a guideless type in which a guide is not provided.

The reaction force generated by the movement of the wafer stage may be mechanically released to the floor (ground) using a frame member (as described in US Pat. No. 5,528,118).
The reaction force generated by the movement of the reticle stage is (US S
As described in / N 416558, a frame member may be used to mechanically escape to the floor (ground).

As described above, the exposure apparatus of the present embodiment is
Each component (e) recited in the claims of the present application (claims)
It is manufactured by assembling various subsystems including lements) so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. To ensure these various precisions,
Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and adjustments to achieve electrical accuracy for various electrical systems Adjustments are made. The process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

For a semiconductor device, a step of designing the function and performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a step of forming a reticle pattern by the exposure apparatus of the above-described embodiment. It is manufactured through a step of exposing a wafer, a device assembling step (including a dicing step, a bonding step, and a package step), an inspection step, and the like. A semiconductor device is an apparatus for designing device functions and performance, an apparatus for manufacturing a reticle based on this design apparatus, an apparatus for manufacturing a wafer from a silicon material, and a reticle pattern is exposed on a wafer by the exposure apparatus of the above-described embodiment. Manufacturing apparatus, a device assembling apparatus (including those performing a dicing step, a bonding step, and a packaging step), an inspection apparatus, and the like. And the device manufacturing apparatus, at least one of these,
It is composed of the exposure apparatus of the present invention.

[0051]

According to the present invention, the following effects can be obtained.
According to the exposure method according to the first aspect and the exposure apparatus according to the sixth aspect, the gas is supplied to at least one space formed between the exposure energy generation source and the substrate, and the gas supplied to the space is supplied. Since the flow rate is adjusted according to the incident condition of the exposure energy incident on the space, the photochemical reaction caused by the exposure energy is minimized, and the antifouling effect of the optical member and the exposure light transmittance in the space can be increased. In addition to the above, an appropriate amount of inert gas can be obtained, so that the running cost can be optimized.

According to the exposure method according to the second aspect and the exposure apparatus according to the seventh aspect, at least one of the inside of the illumination optical system or the projection optical system depends on the condition of incidence of exposure energy to the illumination optical system or the projection optical system. Adjusting the gas flow rate that flows into the space of the unit minimizes the photochemical reaction caused by exposure energy, improves the antifouling effect of the illumination optical system or the projection optical system, and uses an appropriate amount of inert gas. Is obtained, the running cost can be optimized.

According to the third aspect of the present invention, the condition for the exposure energy is at least the exposure energy amount per unit time, the time at which the exposure energy is incident on the projection optical system or the illumination optical system, or the incident history. Since there is only one, by making the flow rate correspond to these conditions that greatly affect the state of ozone generation and impurity deposition, a sufficient antifouling effect and an appropriate running cost can be obtained.

According to the exposure method of the fourth aspect and the exposure apparatus of the eighth aspect, at the time of exposure, at least a part of the space in the projection optical system is filled with gas, and the pressure in the space is controlled to control the projection optical system. Since the optical characteristics of the system are corrected and the gas in the space is allowed to flow out of the space at the time of non-exposure, the necessary exposure accuracy is ensured by pressure control at the time of exposure, and sufficient for the projection optical system at the time of non-exposure. Gas is caused to flow in the space, and the antifouling effect in the closed space for controlling the pressure of the projection optical system can be enhanced.

According to the device manufacturing method of the fifth aspect and the device manufacturing apparatus of the ninth aspect, since the exposure method or the exposure apparatus is provided, the contamination of the optical member can be effectively prevented during transfer. In addition to this, waste of gas supply is reduced, and devices such as semiconductor elements can be manufactured at excellent running costs.

[Brief description of the drawings]

FIG. 1 is a schematic overall configuration diagram showing an exposure method according to an embodiment of the present invention, a device manufacturing method using the same, and an exposure apparatus and an exposure apparatus in a device manufacturing apparatus using the same.

FIG. 2 is a schematic configuration showing an exposure method according to the present invention, a device manufacturing method using the same, and an exposure apparatus and a projection optical system and a pressure controller in an embodiment of a device manufacturing apparatus using the same. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Exposure light source (exposure energy generation source) 17 Pressure control device (pressure control mechanism) 25 Exhaust electromagnetic on-off valve 26 Exposure amount control device (adjustment mechanism) 29 Inert gas regulator (gas supply mechanism) 30 Pressure control room (space) C Main controller IL Exposure light (exposure energy) LO Illumination optical system PL Projection optical system R Reticle (mask) W Wafer (substrate)

Claims (9)

[Claims] 1. An exposure method for guiding exposure energy from an exposure energy source to a mask and transferring a pattern of the mask to a substrate, wherein at least one of the exposure energy sources and the substrate is formed between the substrate and the substrate. An exposure method, wherein a gas is supplied to two spaces and a flow rate of the gas supplied to the space is adjusted in accordance with an incident condition of the exposure energy incident on the space. 2. An exposure method in which exposure energy is guided by an illumination optical system to irradiate a mask, and a pattern on the mask is transferred to a substrate via a projection optical system under the exposure energy. An exposure method comprising: adjusting a flow rate of a gas flowing into at least a part of a space in an illumination optical system or a projection optical system according to a condition of incidence of the exposure energy to a system or the projection optical system. 3. An incident condition of the exposure energy is at least one of an exposure energy amount per unit time, a time at which the exposure energy is incident on the projection optical system or the illumination optical system, and an incident history. 3. The exposure method according to claim 2, wherein: 4. An exposure method for guiding exposure energy to a mask and transferring a pattern on the mask to a substrate via a projection optical system, wherein a gas is supplied to at least a part of the space in the projection optical system during the exposure. And a pressure control step of controlling the pressure in the space to correct the optical characteristics of the projection optical system, and a gas flow step of flowing gas in the space out of the space during non-exposure. Exposure method characterized by the above-mentioned. 5. A method of manufacturing a device, which is manufactured through a transfer step of transferring a pattern of a mask onto a substrate, wherein the transfer step is performed by the exposure method according to claim 1. Manufacturing method of the device. 6. An exposure apparatus for guiding exposure energy from an exposure energy generation source to a mask and transferring a pattern of the mask to a substrate, wherein at least one of the exposure devices formed between the exposure energy generation source and the substrate is provided. Exposure comprising: a gas supply mechanism for supplying gas to two spaces; and an adjustment mechanism for adjusting a flow rate of the gas to be supplied to the space in accordance with an incident condition of the exposure energy incident on the space. apparatus. 7. An exposure apparatus for guiding exposure energy through an illumination optical system to irradiate the mask with the exposure energy, and transferring a pattern on the mask to a substrate via the projection optical system under the exposure energy, wherein the illumination optical system A gas supply mechanism that allows gas to flow into at least a part of the space in the system or the projection optical system; and adjusting a flow rate of the gas according to an incident condition of the exposure energy to the illumination optical system or the projection optical system. An exposure apparatus having an adjustment mechanism. 8. An exposure apparatus for guiding exposure energy to a mask and transferring a pattern on the mask to a substrate via a projection optical system, wherein at least a part of the space in the projection optical system is exposed to gas during the exposure. And a pressure control mechanism for controlling the pressure in the space to correct the optical characteristics of the projection optical system, and a gas flow mechanism for flowing gas in the space out of the space during non-exposure. Exposure apparatus. 9. An apparatus for manufacturing a device manufactured by transferring a pattern of a mask onto a substrate, the apparatus comprising the exposure apparatus according to claim 6. Description: